Log in

Relevant bibliographies by topics / Metal oxide semiconductors. Epitaxy

Contents

Journal articles
Dissertations / Theses
Books
Book chapters
Conference papers
Reports

Academic literature on the topic 'Metal oxide semiconductors. Epitaxy'

Author: Grafiati

Published: 4 June 2021

Last updated: 7 February 2022

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'Metal oxide semiconductors. Epitaxy.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Journal articles on the topic "Metal oxide semiconductors. Epitaxy"

1

Convertino, Clarissa, Cezar Zota, Heinz Schmid, et al. "InGaAs FinFETs Directly Integrated on Silicon by Selective Growth in Oxide Cavities." Materials 12, no. 1 (2018): 87. http://dx.doi.org/10.3390/ma12010087.

Full text

Abstract:

III-V semiconductors are being considered as promising candidates to replace silicon channel for low-power logic and RF applications in advanced technology nodes. InGaAs is particularly suitable as the channel material in n-type metal-oxide-semiconductor field-effect transistors (MOSFETs), due to its high electron mobility. In the present work, we report on InGaAs FinFETs monolithically integrated on silicon substrates. The InGaAs channels are created by metal–organic chemical vapor deposition (MOCVD) epitaxial growth within oxide cavities, a technique referred to as template-assisted selectiv

APA, Harvard, Vancouver, ISO, and other styles

2

Medina, G., P. A. Stampe, R. J. Kennedy, et al. "Characterization of Tin Oxide Grown by Molecular Beam Epitaxy." MRS Proceedings 1633 (2014): 13–18. http://dx.doi.org/10.1557/opl.2014.305.

Full text

Abstract:

ABSTRACTWe describe the characteristics of a series of thin film tin oxide films grown by plasma-assisted molecular beam epitaxy on r-plane sapphire substrates over a range of flux and substrate temperature conditions. A mixture of both SnO2 and SnO are detected in several films, with the amount depending on growth conditions, most particularly the substrate temperature. Electrical measurements were not possible on all samples due to roughness related issues with contacting, but at least one film exhibited p-type characteristics depending on measurement conditions, and one sample exhibited sig

APA, Harvard, Vancouver, ISO, and other styles

3

Lubnow, Andreas, Guang-Ping Tang, Hergo-Heinrich Wehmann, Erwin Peiner, and Andreas Schlachetzki. "Effect of III/V-Compound Epitaxy on Si Metal-Oxide-Semiconductor Circuits." Japanese Journal of Applied Physics 33, Part 1, No. 6A (1994): 3628–34. http://dx.doi.org/10.1143/jjap.33.3628.

Full text

APA, Harvard, Vancouver, ISO, and other styles

4

Chu, L. K., W. C. Lee, M. L. Huang, et al. "Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y2O3 on Ge." Journal of Crystal Growth 311, no. 7 (2009): 2195–98. http://dx.doi.org/10.1016/j.jcrysgro.2008.10.069.

Full text

APA, Harvard, Vancouver, ISO, and other styles

5

Gouyé, A., I. Berbezier, L. Favre, et al. "Low-temperature solid phase epitaxy for integrating advanced source/drain metal-oxide-semiconductor structures." Applied Physics Letters 96, no. 6 (2010): 063102. http://dx.doi.org/10.1063/1.3298354.

Full text

APA, Harvard, Vancouver, ISO, and other styles

6

Mahyuddin, A., A. Azrina, M. Z. Mohd Yusoff, and Z. Hassan. "Fabrication and characterization of AlN metal–insulator–semiconductor grown Si substrate." Modern Physics Letters B 31, no. 33 (2017): 1750313. http://dx.doi.org/10.1142/s0217984917503134.

Full text

Abstract:

An experimental investigation was conducted to explore the effect of inserting a single AlGaN interlayer between AlN epilayer and GaN/AlN heterostructures on Si (111) grown by molecular beam epitaxy (MBE). It is confirmed from the scanning electron microscopy (SEM) that the AlGaN interlayer has a remarkable effect on reducing the tensile stress and dislocation density in AlN top layer. Capacitance–voltage (C–V) measurements were conducted to study the electrical properties of AlN/GaN heterostructures. While deriving the findings through the calculation it is suggested that the AlGaN interlayer

APA, Harvard, Vancouver, ISO, and other styles

7

Nunn, William, Anusha Kamath Manjeshwar, Jin Yue, Anil Rajapitamahuni, Tristan K. Truttmann, and Bharat Jalan. "Novel synthesis approach for “stubborn” metals and metal oxides." Proceedings of the National Academy of Sciences 118, no. 32 (2021): e2105713118. http://dx.doi.org/10.1073/pnas.2105713118.

Full text

Abstract:

Advances in physical vapor deposition techniques have led to a myriad of quantum materials and technological breakthroughs, affecting all areas of nanoscience and nanotechnology which rely on the innovation in synthesis. Despite this, one area that remains challenging is the synthesis of atomically precise complex metal oxide thin films and heterostructures containing “stubborn” elements that are not only nontrivial to evaporate/sublimate but also hard to oxidize. Here, we report a simple yet atomically controlled synthesis approach that bridges this gap. Using platinum and ruthenium as exampl

APA, Harvard, Vancouver, ISO, and other styles

8

Kent, Tyler, Mary Edmonds, Ravi Droopad, and Andrew C. Kummel. "InGaAs (110) Surface Cleaning Using Atomic Hydrogen." Solid State Phenomena 219 (September 2014): 47–51. http://dx.doi.org/10.4028/www.scientific.net/ssp.219.47.

Full text

Abstract:

A major obstacle facing III-V semiconductor based metal oxide semiconductor field effect transistors (MOSFETs) is the large density of trap states that exist at the semiconductor/oxide interface.[1] These trap states can pin the Fermi level preventing the MOSFET from acting as a switch in logic devices. Several sources of Fermi level pinning have been proposed including oxidation of the III-V substrate.[2, 3] In order to minimize the presence of III-V oxides it is crucial to employ either an ex-situ etch or to use an in-situ method such as atomic hydrogen cleaning.[4, 5] Although atomic H clea

APA, Harvard, Vancouver, ISO, and other styles

9

King, C. A., R. W. Johnson, T. Y. Chiu, J. M. Sung, and M. D. Morris. "Suppression of Arsenic Autodoping with Rapid Thermal Epitaxy for Low Power Bipolar Complementary Metal Oxide Semiconductor." Journal of The Electrochemical Society 142, no. 7 (1995): 2430–34. http://dx.doi.org/10.1149/1.2044315.

Full text

APA, Harvard, Vancouver, ISO, and other styles

10

Kikuchi, Yoshiaki, Yasushi Tateshita, Yuki Miyanami, Hitoshi Wakabayashi, Yukio Tagawa, and Naoki Nagashima. "Novel Damascene Gate Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated byIn situArsenic- and Boron-Doped Epitaxy." Japanese Journal of Applied Physics 49, no. 7 (2010): 071301. http://dx.doi.org/10.1143/jjap.49.071301.

Full text

APA, Harvard, Vancouver, ISO, and other styles

More sources

Dissertations / Theses on the topic "Metal oxide semiconductors. Epitaxy"

1

John, Soji. "UHVCVD growth of Si₁-x-yGexCy epitaxial materials and application in heterostructure MOS devices /." Digital version accessible at:, 1998. http://wwwlib.umi.com/cr/utexas/main.

Full text

APA, Harvard, Vancouver, ISO, and other styles

2

Zhang, Kelvin Hongliang. "Structural and electronic investigations of In₂O₃ nanostructures and thin films grown by molecular beam epitaxy." Thesis, University of Oxford, 2011. http://ora.ox.ac.uk/objects/uuid:de125918-b36f-47cc-b72d-2f3a27a96488.

Full text

Abstract:

Transparent conducting oxides (TCOs) combine optical transparency in the visible region with a high electrical conductivity. In2O3 doped with Sn (widely, but somewhat misleadingly, known as indium tin oxide or ITO) is at present the most important TCO, with applications in liquid crystal displays, touch screen displays, organic photovoltaics and other optoelectronic devices. Surprisingly, many of its fundamental properties have been the subject of controversy or have until recently remained unknown, including even the nature and magnitude of the bandgap. The technological importance of the mat

APA, Harvard, Vancouver, ISO, and other styles

3

Hass, Joanna R. "Structural characterization of epitaxial graphene on silicon carbide." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2008. http://hdl.handle.net/1853/26654.

Full text

Abstract:

Thesis (Ph.D)--Physics, Georgia Institute of Technology, 2009.<br>Committee Co-Chair: Conrad, Edward; Committee Co-Chair: First, Phillip; Committee Member: Carter, Brent; Committee Member: de Heer, Walter; Committee Member: Zangwill, Andrew. Part of the SMARTech Electronic Thesis and Dissertation Collection.

APA, Harvard, Vancouver, ISO, and other styles

4

Al-Ahmadi, Ahmad Aziz. "Complementary orthogonal stacked metal oxide semiconductor a novel nanoscale complementary metal oxide semiconductor architecture /." Ohio : Ohio University, 2006. http://www.ohiolink.edu/etd/view.cgi?ohiou1147134449.

Full text

APA, Harvard, Vancouver, ISO, and other styles

5

Pelloquin, Sylvain. "LaAlO3 amorphe déposé par épitaxie par jets moléculaires sur silicium comme alternative pour la grille high-κ des transistors CMOS". Phd thesis, INSA de Lyon, 2011. http://tel.archives-ouvertes.fr/tel-00694351.

Full text

Abstract:

Depuis l'invention du transistor MOS à effet de champ dans les années 60, l'exploitation de cette brique élémentaire a permis une évolution exponentielle du domaine de la microélectronique, avec une course effrénée vers la miniaturisation des dispositifs électroniques CMOS. Dans ce contexte, l'introduction des oxydes "high-κ" (notamment HfO2) a permis de franchir la barrière sub-nanométrique de l'EOT (Equivalent Oxide Thickness) pour l'oxyde de grille. Les travaux actuels concernent notamment la recherche de matériaux "high-κ" et de procédés qui permettraient d'avoir une interface abrupte, the

APA, Harvard, Vancouver, ISO, and other styles

6

Butler, Barry R. "Atmospheric pressure metal-organic vapour phase epitaxy of InP, (GaIn)As and (GaIn)(AsP) alloys." Thesis, Durham University, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.386374.

Full text

APA, Harvard, Vancouver, ISO, and other styles

7

Pesci, Federico M. "Metal oxide semiconductors employed as photocatalysts during water splitting." Thesis, Imperial College London, 2014. http://hdl.handle.net/10044/1/24964.

Full text

Abstract:

Photocatalytic water splitting has attracted significant interest in recent decades as it offers a clean and environmentally friendly route for the production of hydrogen. A key challenge remains the development of systems that employ abundant, non-toxic and inexpensive materials to dissociate water efficiently using sunlight. Titanium dioxide (TiO2), tungsten trioxide (WO3) and hematite (α-Fe2O3) are among the most studied photoanodes employed during water splitting because of the position of their valence band which is suitable for oxidising water to oxygen, and their low costs. However repo

APA, Harvard, Vancouver, ISO, and other styles

8

Gurcan, Zeki B. "0.18 [mu]m high performance CMOS process optimization for manufacturability /." Online version of thesis, 2005. http://hdl.handle.net/1850/5197.

Full text

APA, Harvard, Vancouver, ISO, and other styles

9

Wu, Ting. "Design of terabits/s CMOS crossbar switch chip /." View Abstract or Full-Text, 2003. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202003%20WU.

Full text

Abstract:

Thesis (M. Phil.)--Hong Kong University of Science and Technology, 2003.<br>Includes bibliographical references (leaves 100-105). Also available in electronic version. Access restricted to campus users.

APA, Harvard, Vancouver, ISO, and other styles

10

Mares, Jeremy. "EPITAXIAL GROWTH, CHARACTERIZATION AND APPLICATION OF NOVEL WIDE BANDGAP OXIDE SEMICONDUCTORS." Doctoral diss., University of Central Florida, 2010. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/3002.

Full text

Abstract:

In this work, a body of knowledge is presented which pertains to the growth, characterization and exploitation of high quality, novel II-IV oxide epitaxial films and structures grown by plasma-assisted molecular beam epitaxy. The two compounds of primary interest within this research are the ternary films NixMg1-xO and ZnxMg1-xO and the investigation focuses predominantly on the realization, assessment and implementation of these two oxides as optoelectronic materials. The functioning hypothesis for this largely experimental effort has been that these cubic ternary oxides can be exploited - an

APA, Harvard, Vancouver, ISO, and other styles

More sources

Books on the topic "Metal oxide semiconductors. Epitaxy"

1

Zhao, Yi. Wafer level reliability of advanced CMOS devices and processes. Nova Science Publishers, 2008.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

2

Lancaster, Don. CMOS cookbook. 2nd ed. H.W. Sams, 1988.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

3

M, Berlin Howard, ed. CMOS cookbook. 2nd ed. Newnes, 1997.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

4

Nicollian, E. H. MOS (metal oxide semiconductor) physics and technology. Wiley-Interscience, 2003.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

5

Pfaffli, Paul. Characterisation of degradation and failure phenomena in MOS devices. Hartung-Gorre, 1999.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

6

Sato, Norio. Electrochemistry at metal and semiconductor electrodes. Elsevier, 1998.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

7

F, Hawkins Charles, ed. CMOS electronics: How it works, how it fails. IEEE Press, 2004.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

8

Helms, Harry L. High-speed (HC/HCT) CMOS guide. Prentice Hall, 1989.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

9

Kwon, Min-jun. CMOS technology. Nova Science Publishers, 2010.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

10

Shoji, Masakazu. CMOS digital circuit technology. Prentice Hall, 1988.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

More sources

Book chapters on the topic "Metal oxide semiconductors. Epitaxy"

1

Janotti, A., J. B. Varley, J. L. Lyons, and C. G. Van de Walle. "Controlling the Conductivity in Oxide Semiconductors." In Functional Metal Oxide Nanostructures. Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-9931-3_2.

Full text

APA, Harvard, Vancouver, ISO, and other styles

2

Baratto, Camilla, Elisabetta Comini, Guido Faglia, et al. "Transparent Metal Oxide Semiconductors as Gas Sensors." In Transparent Electronics. John Wiley & Sons, Ltd, 2010. http://dx.doi.org/10.1002/9780470710609.ch17.

Full text

APA, Harvard, Vancouver, ISO, and other styles

3

Nandasiri, Manjula I., Satyanarayana V. N. T. Kuchibhatla, and Suntharampillai Thevuthasan. "Synthesis of Metal Oxide Nanomaterials for Chemical Sensors by Molecular Beam Epitaxy." In Metal Oxide Nanomaterials for Chemical Sensors. Springer New York, 2012. http://dx.doi.org/10.1007/978-1-4614-5395-6_6.

Full text

APA, Harvard, Vancouver, ISO, and other styles

4

Leys, M. R. "Metal Organic Vapour Phase Epitaxy for the Growth of Semiconductor Structures and Strained Layers." In Low-Dimensional Structures in Semiconductors. Springer US, 1991. http://dx.doi.org/10.1007/978-1-4899-0623-6_5.

Full text

APA, Harvard, Vancouver, ISO, and other styles

5

Fukumura, Tomoteru, and Masashi Kawasaki. "Magnetic Oxide Semiconductors: On the High-Temperature Ferromagnetism in TiO2- and ZnO-Based Compounds." In Functional Metal Oxides. Wiley-VCH Verlag GmbH & Co. KGaA, 2013. http://dx.doi.org/10.1002/9783527654864.ch3.

Full text

APA, Harvard, Vancouver, ISO, and other styles

6

Jongh, L. J. "Superconductivity by Local Pairs (Bipolarons) in Doped Metal Oxide Semiconductors." In Mixed Valency Systems: Applications in Chemistry, Physics and Biology. Springer Netherlands, 1991. http://dx.doi.org/10.1007/978-94-011-3606-8_13.

Full text

APA, Harvard, Vancouver, ISO, and other styles

7

Ameen, Sadia, M. Shaheer Akhtar, Hyung-Kee Seo, and Hyung Shik Shin. "Metal Oxide Semiconductors and their Nanocomposites Application Towards Photovoltaic and Photocatalytic." In Advanced Energy Materials. John Wiley & Sons, Inc., 2014. http://dx.doi.org/10.1002/9781118904923.ch3.

Full text

APA, Harvard, Vancouver, ISO, and other styles

8

Hartnagel, H. L., and V. P. Sirkeli. "The Use of Metal Oxide Semiconductors for THz Spectroscopy of Biological Applications." In IFMBE Proceedings. Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-31866-6_43.

Full text

APA, Harvard, Vancouver, ISO, and other styles

9

Körösi, L., K. Mogyorósi, R. Kun, J. Németh, and I. Dékány. "Preparation and photooxidation properties of metal oxide semiconductors incorporated in layer silicates." In From Colloids to Nanotechnology. Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-540-45119-8_5.

Full text

APA, Harvard, Vancouver, ISO, and other styles

10

Krik, Soufiane, Andrea Gaiardo, Matteo Valt, et al. "Influence of Oxygen Vacancies in Gas Sensors Based on Metal-Oxide Semiconductors: A First-Principles Study." In Lecture Notes in Electrical Engineering. Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-37558-4_47.

Full text

APA, Harvard, Vancouver, ISO, and other styles

Conference papers on the topic "Metal oxide semiconductors. Epitaxy"

1

Mauze, Akhil, Yuewei Zhang, and James Speck. "(010) $\beta$-Ga2O3 Metal Oxide Catalyzed Epitaxy (MOCATAXY) growth and Sn doping in plasma-assisted molecular beam epitaxy." In 2019 Compound Semiconductor Week (CSW). IEEE, 2019. http://dx.doi.org/10.1109/iciprm.2019.8819269.

Full text

APA, Harvard, Vancouver, ISO, and other styles

2

Li Ji, Martin D. McDaniel, Li Tao, et al. "Atomic scale engineering of metal-oxide-semiconductor photoelectrodes for energy harvesting application integrated with Graphene and Epitaxy SrTiO3." In 2014 IEEE International Electron Devices Meeting (IEDM). IEEE, 2014. http://dx.doi.org/10.1109/iedm.2014.7047013.

Full text

APA, Harvard, Vancouver, ISO, and other styles

3

Seo, Young-Ho, Seung-Woo Do, Yong-Hyun Lee, Jae-Sung Lee, Jisoon Ihm, and Hyeonsik Cheong. "Deuterium Process to Improve Gate Oxide Integrity in Metal-Oxide-Silicon (MOS) Structure." In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666696.

Full text

APA, Harvard, Vancouver, ISO, and other styles

4

Rangel-Kuoppa, Victor-Tapio, Cesia Guarneros Aguilar, Victor Sánchez-Reséndiz, Jisoon Ihm, and Hyeonsik Cheong. "Electrical Properties Of GaN Layers Grown By Metal Organic Vapor Phase Epitaxy (MOVPE)." In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666245.

Full text

APA, Harvard, Vancouver, ISO, and other styles

5

Lee, Dong Uk, Seon Pil Kim, Hyo Jun Lee, et al. "Study on transparent and flexible memory with metal-oxide nanocrystals." In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666652.

Full text

APA, Harvard, Vancouver, ISO, and other styles

6

Satsangi, Vibha R. "Metal oxide semiconductors in PEC splitting of water." In Solar Energy + Applications, edited by Jinghua Guo. SPIE, 2007. http://dx.doi.org/10.1117/12.734795.

Full text

APA, Harvard, Vancouver, ISO, and other styles

7

Huang, C. T., J. D. Wu, Y. S. Huang, et al. "Optical Characterization of Pseudomorphic GaAsSb∕GaAs-Based Quantum Well Structures Grown by Metal Organic Vapor Phase Epitaxy." In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666505.

Full text

APA, Harvard, Vancouver, ISO, and other styles

8

Pozina, G., C. Hemmingsson, J. P. Bergman, et al. "Optical Properties Of Metastable Shallow Acceptors In Mg-Doped GaN Layers Grown By Metal-Organic Vapor Phase Epitaxy." In PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors. AIP, 2010. http://dx.doi.org/10.1063/1.3295320.

Full text

APA, Harvard, Vancouver, ISO, and other styles

9

Rangel-Kuoppa, Victor-Tapio, Victor Sánchez-Reséndiz, Jisoon Ihm, and Hyeonsik Cheong. "Electrical Properties Of InN Layers Obtained Via Nitridation Of InAs Substrates Using Metal Organic Vapor Phase Epitaxy (MOVPE)." In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666293.

Full text

APA, Harvard, Vancouver, ISO, and other styles

10

Hwang, J. S., W. Y. Chou, G. S. Chang, et al. "Characterization of the interfacial electronic properties of oxide films on GaAs fabricated by in-situ molecular beam epitaxy." In Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors. IEEE, 1997. http://dx.doi.org/10.1109/iscs.1998.711628.

Full text

APA, Harvard, Vancouver, ISO, and other styles

Reports on the topic "Metal oxide semiconductors. Epitaxy"

1

Bryant, R. E. Two Papers on a Symbolic Analyzer for MOS (Metal-Oxide Semiconductors) Circuits. Defense Technical Information Center, 1987. http://dx.doi.org/10.21236/ada188617.

Full text

APA, Harvard, Vancouver, ISO, and other styles

2

Hane, G. J., M. Yorozu, T. Sogabe, and S. Suzuki. Long-term research in Japan: amorphous metals, metal oxide varistors, high-power semiconductors and superconducting generators. Office of Scientific and Technical Information (OSTI), 1985. http://dx.doi.org/10.2172/5621417.

Full text

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!