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Journal articles on the topic 'Metal oxide semiconductors. Epitaxy'

Author: Grafiati

Published: 4 June 2021

Last updated: 7 February 2022

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1

Convertino, Clarissa, Cezar Zota, Heinz Schmid, et al. "InGaAs FinFETs Directly Integrated on Silicon by Selective Growth in Oxide Cavities." Materials 12, no. 1 (2018): 87. http://dx.doi.org/10.3390/ma12010087.

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III-V semiconductors are being considered as promising candidates to replace silicon channel for low-power logic and RF applications in advanced technology nodes. InGaAs is particularly suitable as the channel material in n-type metal-oxide-semiconductor field-effect transistors (MOSFETs), due to its high electron mobility. In the present work, we report on InGaAs FinFETs monolithically integrated on silicon substrates. The InGaAs channels are created by metal–organic chemical vapor deposition (MOCVD) epitaxial growth within oxide cavities, a technique referred to as template-assisted selectiv

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2

Medina, G., P. A. Stampe, R. J. Kennedy, et al. "Characterization of Tin Oxide Grown by Molecular Beam Epitaxy." MRS Proceedings 1633 (2014): 13–18. http://dx.doi.org/10.1557/opl.2014.305.

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ABSTRACTWe describe the characteristics of a series of thin film tin oxide films grown by plasma-assisted molecular beam epitaxy on r-plane sapphire substrates over a range of flux and substrate temperature conditions. A mixture of both SnO2 and SnO are detected in several films, with the amount depending on growth conditions, most particularly the substrate temperature. Electrical measurements were not possible on all samples due to roughness related issues with contacting, but at least one film exhibited p-type characteristics depending on measurement conditions, and one sample exhibited sig

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3

Lubnow, Andreas, Guang-Ping Tang, Hergo-Heinrich Wehmann, Erwin Peiner, and Andreas Schlachetzki. "Effect of III/V-Compound Epitaxy on Si Metal-Oxide-Semiconductor Circuits." Japanese Journal of Applied Physics 33, Part 1, No. 6A (1994): 3628–34. http://dx.doi.org/10.1143/jjap.33.3628.

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4

Chu, L. K., W. C. Lee, M. L. Huang, et al. "Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y2O3 on Ge." Journal of Crystal Growth 311, no. 7 (2009): 2195–98. http://dx.doi.org/10.1016/j.jcrysgro.2008.10.069.

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5

Gouyé, A., I. Berbezier, L. Favre, et al. "Low-temperature solid phase epitaxy for integrating advanced source/drain metal-oxide-semiconductor structures." Applied Physics Letters 96, no. 6 (2010): 063102. http://dx.doi.org/10.1063/1.3298354.

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6

Mahyuddin, A., A. Azrina, M. Z. Mohd Yusoff, and Z. Hassan. "Fabrication and characterization of AlN metal–insulator–semiconductor grown Si substrate." Modern Physics Letters B 31, no. 33 (2017): 1750313. http://dx.doi.org/10.1142/s0217984917503134.

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An experimental investigation was conducted to explore the effect of inserting a single AlGaN interlayer between AlN epilayer and GaN/AlN heterostructures on Si (111) grown by molecular beam epitaxy (MBE). It is confirmed from the scanning electron microscopy (SEM) that the AlGaN interlayer has a remarkable effect on reducing the tensile stress and dislocation density in AlN top layer. Capacitance–voltage (C–V) measurements were conducted to study the electrical properties of AlN/GaN heterostructures. While deriving the findings through the calculation it is suggested that the AlGaN interlayer

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7

Nunn, William, Anusha Kamath Manjeshwar, Jin Yue, Anil Rajapitamahuni, Tristan K. Truttmann, and Bharat Jalan. "Novel synthesis approach for “stubborn” metals and metal oxides." Proceedings of the National Academy of Sciences 118, no. 32 (2021): e2105713118. http://dx.doi.org/10.1073/pnas.2105713118.

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Advances in physical vapor deposition techniques have led to a myriad of quantum materials and technological breakthroughs, affecting all areas of nanoscience and nanotechnology which rely on the innovation in synthesis. Despite this, one area that remains challenging is the synthesis of atomically precise complex metal oxide thin films and heterostructures containing “stubborn” elements that are not only nontrivial to evaporate/sublimate but also hard to oxidize. Here, we report a simple yet atomically controlled synthesis approach that bridges this gap. Using platinum and ruthenium as exampl

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8

Kent, Tyler, Mary Edmonds, Ravi Droopad, and Andrew C. Kummel. "InGaAs (110) Surface Cleaning Using Atomic Hydrogen." Solid State Phenomena 219 (September 2014): 47–51. http://dx.doi.org/10.4028/www.scientific.net/ssp.219.47.

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A major obstacle facing III-V semiconductor based metal oxide semiconductor field effect transistors (MOSFETs) is the large density of trap states that exist at the semiconductor/oxide interface.[1] These trap states can pin the Fermi level preventing the MOSFET from acting as a switch in logic devices. Several sources of Fermi level pinning have been proposed including oxidation of the III-V substrate.[2, 3] In order to minimize the presence of III-V oxides it is crucial to employ either an ex-situ etch or to use an in-situ method such as atomic hydrogen cleaning.[4, 5] Although atomic H clea

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9

King, C. A., R. W. Johnson, T. Y. Chiu, J. M. Sung, and M. D. Morris. "Suppression of Arsenic Autodoping with Rapid Thermal Epitaxy for Low Power Bipolar Complementary Metal Oxide Semiconductor." Journal of The Electrochemical Society 142, no. 7 (1995): 2430–34. http://dx.doi.org/10.1149/1.2044315.

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10

Kikuchi, Yoshiaki, Yasushi Tateshita, Yuki Miyanami, Hitoshi Wakabayashi, Yukio Tagawa, and Naoki Nagashima. "Novel Damascene Gate Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated byIn situArsenic- and Boron-Doped Epitaxy." Japanese Journal of Applied Physics 49, no. 7 (2010): 071301. http://dx.doi.org/10.1143/jjap.49.071301.

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11

Lieten, Ruben R., Tatsuro Maeda, Wipakorn Jevasuwan, et al. "Tensile-Strained GeSn Metal–Oxide–Semiconductor Field-Effect Transistor Devices on Si(111) Using Solid Phase Epitaxy." Applied Physics Express 6, no. 10 (2013): 101301. http://dx.doi.org/10.7567/apex.6.101301.

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12

Terada, Yuki, Yukihiro Shimogaki, Yoshiaki Nakano, and Masakazu Sugiyama. "Metalorganic Vapor Phase Epitaxy of GaAs with AlP Surface Passivation Layer for Improved Metal Oxide Semiconductor Characteristics." Japanese Journal of Applied Physics 49, no. 4 (2010): 04DF04. http://dx.doi.org/10.1143/jjap.49.04df04.

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13

Menon, C., A. C. Lindgren, P. O. Å Persson, L. Hultman, and H. H. Radamson. "Selective Epitaxy of Si[sub 1−x]Ge[sub x] Layers for Complementary Metal Oxide Semiconductor Applications." Journal of The Electrochemical Society 150, no. 4 (2003): G253. http://dx.doi.org/10.1149/1.1556599.

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14

Wan, H. W., K. Y. Lin, C. K. Cheng, et al. "GaAs metal-oxide-semiconductor push with molecular beam epitaxy Y2O3 – In comparison with atomic layer deposited Al2O3." Journal of Crystal Growth 477 (November 2017): 179–82. http://dx.doi.org/10.1016/j.jcrysgro.2016.11.118.

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15

Uehara, Takashi, Hiroshi Matsubara, Ryosho Nakane, Satoshi Sugahara, and Shin-ichi Takagi. "Ultrathin Ge-on-Insulator Metal Source/Drain p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated By Low-Temperature Molecular-Beam Epitaxy." Japanese Journal of Applied Physics 46, no. 4B (2007): 2117–21. http://dx.doi.org/10.1143/jjap.46.2117.

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16

Gossner, Harald, Ignaz Eisele, and Lothar Risch. "Vertical Si-Metal-Oxide-Semiconductor Field Effect Transistors with Channel Lengths of 50 nm by Molecular Beam Epitaxy." Japanese Journal of Applied Physics 33, Part 1, No. 4B (1994): 2423–28. http://dx.doi.org/10.1143/jjap.33.2423.

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17

Wang, G. L., M. Moeen, A. Abedin, et al. "Optimization of SiGe selective epitaxy for source/drain engineering in 22 nm node complementary metal-oxide semiconductor (CMOS)." Journal of Applied Physics 114, no. 12 (2013): 123511. http://dx.doi.org/10.1063/1.4821238.

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18

Pey, K. L., C. H. Tung, L. J. Tang, W. H. Lin, and M. K. Radhakrishnan. "Size difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistors." Applied Physics Letters 83, no. 14 (2003): 2940–42. http://dx.doi.org/10.1063/1.1616195.

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19

Hållstedt, J., M. Kolahdouz, R. Ghandi, H. H. Radamson, and R. Wise. "Pattern dependency in selective epitaxy of B-doped SiGe layers for advanced metal oxide semiconductor field effect transistors." Journal of Applied Physics 103, no. 5 (2008): 054907. http://dx.doi.org/10.1063/1.2832631.

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20

Aseev, Aleksander Leonidovich, Alexander Vasilevich Latyshev, and Anatoliy Vasilevich Dvurechenskii. "Semiconductor Nanostructures for Modern Electronics." Solid State Phenomena 310 (September 2020): 65–80. http://dx.doi.org/10.4028/www.scientific.net/ssp.310.65.

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Modern electronics is based on semiconductor nanostructures in practically all main parts: from microprocessor circuits and memory elements to high frequency and light-emitting devices, sensors and photovoltaic cells. Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) with ultimately low gate length in the order of tens of nanometers and less is nowadays one of the basic elements of microprocessors and modern electron memory chips. Principally new physical peculiarities of semiconductor nanostructures are related to quantum effects like tunneling of charge carriers, controlled changing

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21

OKTYABRSKY, SERGE, MICHAEL YAKIMOV, VADIM TOKRANOV, et al. "CHALLENGES AND PROGRESS IN III-V MOSFETs FOR CMOS CIRCUITS." International Journal of High Speed Electronics and Systems 18, no. 04 (2008): 761–72. http://dx.doi.org/10.1142/s0129156408005746.

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An overview of III-V MOSFET technological challenges in comparison to well-established heterostructure-based FET technologies is presented with an emphasis on required properties and possible solutions. Possible approaches to achieve thermodynamically stable high- k gate stack with low interface trap density are reviewed, followed with our results on amorphous Si interface passivation layer (IPL) in-situ deposited on top of GaAs or strained InGaAs MOSFET channels grown by molecular beam epitaxy. Main issues of Si IPL, namely increased equivalent oxide thickness due to IPL oxidation and Si diff

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22

Chang, Y. H., H. C. Chiu, W. H. Chang, et al. "GaN metal-oxide-semiconductor diodes with molecular beam epitaxy-Al2O3 as a template followed by atomic layer deposition growth." Journal of Crystal Growth 311, no. 7 (2009): 2084–86. http://dx.doi.org/10.1016/j.jcrysgro.2008.11.011.

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23

Agarwal, Aanchal, Wei-Yang Tien, Yu-Sheng Huang, et al. "ZnO Nanowires on Single-Crystalline Aluminum Film Coupled with an Insulating WO3 Interlayer Manifesting Low Threshold SPP Laser Operation." Nanomaterials 10, no. 9 (2020): 1680. http://dx.doi.org/10.3390/nano10091680.

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ZnO nanowire-based surface plasmon polariton (SPP) nanolasers with metal–insulator–semiconductor hierarchical nanostructures have emerged as potential candidates for integrated photonic applications. In the present study, we demonstrated an SPP nanolaser consisting of ZnO nanowires coupled with a single-crystalline aluminum (Al) film and a WO3 dielectric interlayer. High-quality ZnO nanowires were prepared using a vapor phase transport and condensation deposition process via catalyzed growth. Subsequently, prepared ZnO nanowires were transferred onto a single-crystalline Al film grown by molec

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24

Kikuchi, Yoshiaki, Yasushi Tateshita, Yuki Miyanami, Hitoshi Wakabayashi, Yukio Tagawa, and Naoki Nagashima. "Planar Metal–Oxide–Semiconductor Field-Effect Transistors with Raised Source and Drain Extensions Fabricated byIn situBoron-Doped Selective Silicon Epitaxy." Japanese Journal of Applied Physics 49, no. 3 (2010): 036505. http://dx.doi.org/10.1143/jjap.49.036505.

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25

Holland, M., C. R. Stanley, W. Reid, et al. "Ga[sub 2]O[sub 3] grown on GaAs by molecular beam epitaxy for metal oxide semiconductor field effect transistors." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 25, no. 5 (2007): 1706. http://dx.doi.org/10.1116/1.2778690.

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26

Lee, Ching-Wei, Yung-Hsien Wu, Ching-Heng Hsieh, and Chia-Chun Lin. "Epitaxial GeSn film formed by solid phase epitaxy and its application to Yb2O3-gated GeSn metal-oxide-semiconductor capacitors with sub-nm equivalent oxide thickness." Applied Physics Letters 105, no. 20 (2014): 203508. http://dx.doi.org/10.1063/1.4902119.

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27

Yang, Tsung-Han, Chunming Jin, Ravi Aggarwal, R. J. Narayan, and Jay Narayan. "On growth of epitaxial vanadium oxide thin film on sapphire (0001)." Journal of Materials Research 25, no. 3 (2010): 422–26. http://dx.doi.org/10.1557/jmr.2010.0059.

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We report the characteristics of epitaxial growth and properties of vanadium oxide (VO2) thin films on sapphire (0001) substrates. Pulsed laser deposition was used to grow (002) oriented VO2 films on sapphire (0001). Transmission electron microscopy studies showed that the orientation relationship between the substrate and the thin film is: (002)f2∥(0006)sub3 and [010]f2 ∥sub. It was also established that VO2 has three different orientations in the film plane which are rotated by 60° from each other. The epitaxial growth of vanadium oxide on sapphire (0001) has been explained in the framework

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28

Suzuki, Yuichiro, Shimpei Ogiwara, Takuji Hosoi, Takayoshi Shimura, and Heiji Watanabe. "High-mobility p-channel metal-oxide-semiconductor field-effect transistors on Ge-on-insulator structures formed by lateral liquid-phase epitaxy." Applied Physics Letters 101, no. 20 (2012): 202105. http://dx.doi.org/10.1063/1.4766917.

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29

KAWASAKI, Masashi, Mikk LIPPMAA, Masashi NAKAMURA, Kazuhiro TAKAHASHI, and Hideomi KOINUMA. "Comparative Study on Surfaces of Single-Crystalline Substrates. From Dielectric Substance to Semiconductor and Metal. Atomic Scale Surface Control of Metal Oxide Substrates towards Perfect Epitaxy." Hyomen Kagaku 21, no. 11 (2000): 702–9. http://dx.doi.org/10.1380/jsssj.21.702.

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30

Cheng, Chang-Wei, Soniya S. Raja, Ching-Wen Chang, et al. "Epitaxial aluminum plasmonics covering full visible spectrum." Nanophotonics 10, no. 1 (2020): 627–37. http://dx.doi.org/10.1515/nanoph-2020-0402.

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AbstractAluminum has attracted a great deal of attention as an alternative plasmonic material to silver and gold because of its natural abundance on Earth, material stability, unique spectral capability in the ultraviolet spectral region, and complementary metal-oxide-semiconductor compatibility. Surprisingly, in some recent studies, aluminum has been reported to outperform silver in the visible range due to its superior surface and interface properties. Here, we demonstrate excellent structural and optical properties measured for aluminum epitaxial films grown on sapphire substrates by molecu

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31

Hosoi, Takuji, Yuichiro Suzuki, Takayoshi Shimura, and Heiji Watanabe. "Mobility characterization of Ge-on-insulator metal-oxide-semiconductor field-effect transistors with striped Ge channels fabricated by lateral liquid-phase epitaxy." Applied Physics Letters 105, no. 17 (2014): 173502. http://dx.doi.org/10.1063/1.4900442.

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32

Chang, W. H., T. H. Chiang, Y. D. Wu, M. Hong, C. A. Lin, and J. Kwo. "Self-aligned inversion-channel In0.2Ga0.8As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al2O3/Ga2O3(Gd2O3) as the gate dielectric." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 29, no. 3 (2011): 03C122. http://dx.doi.org/10.1116/1.3565057.

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33

Mochizuki, Shogo, Rainer Loesing, Yun-Yu Wang, and Hemanth Jagannathan. "Study of phosphorus doped Si:C films formed by in situ doped Si epitaxy and implantation process for n-type metal-oxide-semiconductor devices." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 35, no. 2 (2017): 021208. http://dx.doi.org/10.1116/1.4975923.

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34

Walker, J. A., K. W. Goossen, J. E. Cunningham, and W. Y. Jan. "Gas composition dependence of silicon nitride used as gallium diffusion barrier during GaAs molecular beam epitaxy growth on Si complementary metal oxide semiconductor." Journal of Electronic Materials 23, no. 10 (1994): 1081–83. http://dx.doi.org/10.1007/bf02650380.

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35

Lin, T. D., P. Chang, H. C. Chiu, et al. "dc and rf characteristics of self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors using molecular beam epitaxy-Al2O3/Ga2O3(Gd2O3) as gate dielectrics." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 28, no. 3 (2010): C3H14—C3H17. http://dx.doi.org/10.1116/1.3276442.

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36

Li, Ning, Eric S. Harmon, David B. Salzman, et al. "Molecular beam epitaxy growth of InAs and In[sub 0.8]Ga[sub 0.2]As channel materials on GaAs substrate for metal oxide semiconductor field effect transistor applications." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 26, no. 3 (2008): 1187. http://dx.doi.org/10.1116/1.2912086.

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37

Brown, G. J. "Passivation of GaSb using molecular beam epitaxy Y2O3 to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors." Applied Physics Letters 105, no. 18 (2014): 182106. http://dx.doi.org/10.1063/1.4901100.

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38

Yamaguchi, Tadashi, Yoji Kawasaki, Tomohiro Yamashita, et al. "Highly strained channel with low-resistivity carbon-doped source/drain formed by cascade C7Hximplantation followed by rapid solid-phase epitaxy and laser annealing for n-channel metal–oxide–semiconductor field-effect transistor." Japanese Journal of Applied Physics 54, no. 3 (2015): 036503. http://dx.doi.org/10.7567/jjap.54.036503.

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39

Balk, P., A. Brauers, D. Grützmacher, O. Kayser, and M. Weyers. "Epitaxy of III–V semiconductors." Canadian Journal of Physics 69, no. 3-4 (1991): 370–77. http://dx.doi.org/10.1139/p91-062.

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This paper is concerned with the control of the epitaxial deposition of III–V materials by means of techniques using metal organic group III compounds and group V hydrides as starting materials: metal-organic vapour-phase epitaxy and metal-organic molecular-beam epitaxy. Such control is essential with regards to intentional and background doping and for the sake of the uniformity of the film properties of binary semiconductors. In systems containing ternary and quaternary materials, there is the further requirement of compositional control and lattice matching. In addition to the equipment asp

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40

Kuech, T. F. "Metal-organic vapor phase epitaxy of compound semiconductors." Materials Science Reports 2, no. 1 (1987): 1–49. http://dx.doi.org/10.1016/0920-2307(87)90002-8.

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41

Jin, Xiaofeng. "Epitaxy of 3d Metals on Semiconductors." Surface Review and Letters 05, no. 01 (1998): 273–78. http://dx.doi.org/10.1142/s0218625x98000505.

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Growth of fcc Mn on GaAs(001), as an example of the lattice-mismatched epitaxy of 3d metals on semiconductors, has been studied using reflection high energy electron diffraction (RHEED), X-ray photoelectron spectroscopy (XPS) and the high resolution transmission electron microscope (HRTEM). The result shows that the interface structure plays a critical role in the epitaxial growth of 3d metals on semiconductors. A new recipe is proposed to search for more epitaxially grown 3d metal phases.

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42

Adhikari, Sangeeta, and Debasish Sarkar. "Metal oxide semiconductors for dye degradation." Materials Research Bulletin 72 (December 2015): 220–28. http://dx.doi.org/10.1016/j.materresbull.2015.08.009.

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43

Oye, Michael M., Davood Shahrjerdi, Injo Ok та ін. "Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin (∼80 nm) Si[sub 1−x]Ge[sub x] step-graded buffer layers for high-κ III-V metal-oxide-semiconductor field effect transistor applications". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 25, № 3 (2007): 1098. http://dx.doi.org/10.1116/1.2713119.

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44

Tanaka, Norio, Hirotaka Wakabayashi, Yoshiaki Takata, Shigeo Ohshio, Hidetoshi Saitoh, and Keizo Uematsu. "Complex beam epitaxy of metal oxide films." Materials Research Innovations 2, no. 1 (1998): 39–44. http://dx.doi.org/10.1007/s100190050059.

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45

Kiriakidis, George, and Vassilios Binas. "Metal oxide semiconductors as visible light photocatalysts." Journal of the Korean Physical Society 65, no. 3 (2014): 297–302. http://dx.doi.org/10.3938/jkps.65.297.

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46

Toriumi, Akira. "0.1μm complementary metal–oxide–semiconductors and beyond". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 14, № 6 (1996): 4020. http://dx.doi.org/10.1116/1.588635.

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47

Saha, H., and C. Chaudhuri. "Complementary Metal Oxide Semiconductors Microelectromechanical Systems Integration." Defence Science Journal 59, no. 6 (2009): 557–67. http://dx.doi.org/10.14429/dsj.59.1560.

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48

Anta, Juan A. "Electron transport in nanostructured metal-oxide semiconductors." Current Opinion in Colloid & Interface Science 17, no. 3 (2012): 124–31. http://dx.doi.org/10.1016/j.cocis.2012.02.003.

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49

Tutov, E. A., S. V. Ryabtsev, E. E. Tutov, and E. N. Bormontov. "Silicon MOS structures with nonstoichiometric metal-oxide semiconductors." Technical Physics 51, no. 12 (2006): 1604–7. http://dx.doi.org/10.1134/s1063784206120097.

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50

CAROTTA, M., V. GUIDI, G. MARTINELLI, M. NAGLIATI, D. PUZZOVIO, and D. VECCHI. "Sensing of volatile alkanes by metal-oxide semiconductors." Sensors and Actuators B: Chemical 130, no. 1 (2008): 497–501. http://dx.doi.org/10.1016/j.snb.2007.09.053.

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