Relevant bibliographies by topics / Nanoscale p-n junction

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers

Academic literature on the topic 'Nanoscale p-n junction'

Author: Grafiati
Published: 28 May 2022
Last updated: 30 July 2025

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Journal articles on the topic "Nanoscale p-n junction"

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Majidi, Mohammad, Mohammad Taghi Ahmadi, and Meisam Rahmani. "Analytical Modeling of Carbon Nanoparticle-Based Symmetric p–n Junction." Advanced Science, Engineering and Medicine 11, no. 11 (2019): 1031–35. http://dx.doi.org/10.1166/asem.2019.2446.

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Outstanding physical and electrical properties such as quantum transport, high carrier mobility, excellent electrical and thermal conductivity, high surface area, good optical transparency, strong mechanical strength and easy fabrication make carbon nanoparticles appropriate on nanoelectronic applications. Carbon nanoparticle based p–n junction, as a fundamental structure of nanoscale devices, is analytically presented in this study. The carbon nanoparticle p–n interface reveals an improved transport along the junction in comparison with the conventional p–n junction. Controlling the doping of
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Lu, Ya Lin, Iyad A. Dajani, W. J. Mandeville, R. J. Knize, and S. S. Mao. "New p-n Junction Photodetector Using Optimized ZnO Nanorod Array." Solid State Phenomena 121-123 (March 2007): 809–12. http://dx.doi.org/10.4028/www.scientific.net/ssp.121-123.809.

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In this research, nanoscale spatial resolution p-n junction photodetector arrays were developed using ZnO nanorod arrays grown on p-type silicon substrates. In order to optimize the nanorod array quality, an advanced combinatorial spreadsheet approach was used to optimize the Au catalyst thickness. The crystallinity of these as-grown ZnO nanorods’ was compared to that of bulk and thin film ZnO materials.
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Chen, Yubin, Zhixiao Qin, Xixi Wang, Xu Guo, and Liejin Guo. "Noble-metal-free Cu2S-modified photocatalysts for enhanced photocatalytic hydrogen production by forming nanoscale p–n junction structure." RSC Advances 5, no. 23 (2015): 18159–66. http://dx.doi.org/10.1039/c5ra00091b.

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Chernyak, Leonid, and Mikhail Klimov. "Nanoscale p-n junction fabrication in silicon due to controlled dopant electromigration." Applied Physics Letters 78, no. 11 (2001): 1613–15. http://dx.doi.org/10.1063/1.1355009.

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Zhao, Xiaodong, Huiming Ji, Qianqian Jia, and Mingjing Wang. "A nanoscale Co3O4–WO3 p–n junction sensor with enhanced acetone responsivity." Journal of Materials Science: Materials in Electronics 26, no. 10 (2015): 8217–23. http://dx.doi.org/10.1007/s10854-015-3484-3.

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Wang, Hong, Xiaoli Zheng, Haining Chen, Keyou Yan, Zonglong Zhu, and Shihe Yang. "The nanoscale carbon p–n junction between carbon nanotubes and N,B-codoped holey graphene enhances the catalytic activity towards selective oxidation." Chem. Commun. 50, no. 56 (2014): 7517–20. http://dx.doi.org/10.1039/c4cc01707b.

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Borblik, V. L. "Diffusion length of non-equilibrium current carriers in nanowire radial p-n junctions: Effect of the curvature." Semiconductor Physics, Quantum Electronics and Optoelectronics 25, no. 4 (2022): 394–97. http://dx.doi.org/10.15407/spqeo25.04.394.

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In core-shell nanowire radial p-n junction, spatial (along the radius) distribution of the injected carriers is determined not only by recombination falling of the non-equilibrium carrier concentration but also by specific falling due to cylindrical symmetry of the structure. This forces us to consider an effective diffusion length of non-equilibrium carriers in nanoscale radial structures. This effective diffusion length proves to be larger (up to 25%) than the diffusion length in usual planar p-n junction (made of the same material) under injection from the shell to the core and smaller than
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Piazza, Valerio, Marco Vettori, Ahmed Ali Ahmed, et al. "Nanoscale investigation of a radial p–n junction in self-catalyzed GaAs nanowires grown on Si (111)." Nanoscale 10, no. 43 (2018): 20207–17. http://dx.doi.org/10.1039/c8nr03827a.

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Meng, Fanke, Jiangtian Li, Scott K. Cushing, Mingjia Zhi, and Nianqiang Wu. "Solar Hydrogen Generation by Nanoscale p–n Junction of p-type Molybdenum Disulfide/n-type Nitrogen-Doped Reduced Graphene Oxide." Journal of the American Chemical Society 135, no. 28 (2013): 10286–89. http://dx.doi.org/10.1021/ja404851s.

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Putri, Lutfi Kurnianditia, Boon-Junn Ng, Wee-Jun Ong, Hing Wah Lee, Wei Sea Chang, and Siang-Piao Chai. "Engineering nanoscale p–n junction via the synergetic dual-doping of p-type boron-doped graphene hybridized with n-type oxygen-doped carbon nitride for enhanced photocatalytic hydrogen evolution." Journal of Materials Chemistry A 6, no. 7 (2018): 3181–94. http://dx.doi.org/10.1039/c7ta09723a.

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Dissertations / Theses on the topic "Nanoscale p-n junction"

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Jafarov, M. A., and E. F. Nasirov. "Zn1-xCdxS Nanoparticles, Nanofilms, Nanoscale Junction for SolarCells." Thesis, Sumy State University, 2012. http://essuir.sumdu.edu.ua/handle/123456789/34894.

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The In this work the results on the investigation of the precularity near the solar spectrum region, of Zn1-xCdxS nanoparticles, nanofilms, nanoscale p-n and heterojunction prepared on glass-ceramic ad alumminium substrates by precipitation from aqueous solutions are presented. The temperature dependence of dark and light conductivity, spectrum and optical quenching of primary and impurity photoconductivity are investigated. The obtained results show that when controlling ionic composition and heat-treatment (HT) conditions, one can purposely control the properties of Zn1-xCdxS (0 x 0.6)
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Ramirez, Caballero Gustavo. "Nanoscale Confinement Effects between Thin Metallic Surfaces: Fundamentals and Potential Applications." Thesis, 2011. http://hdl.handle.net/1969.1/ETD-TAMU-2011-12-10506.

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Density functional theory is used to study the physico-chemical effects of two metallic thin films separated by distances in a range of 4-10 amperes. In this condition, the electrons from the metallic thin film surfaces tunnel through the energy barrier existing between the separated thin films, creating an electronic distribution in the gap between films. The characteristics and features of this electronic distribution, such as energy, momentum, and number of electrons, can be traced by quantum mechanical analyses. These same features can be tuned by varying metallic thin film properties li
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Liu, Jing. "Germanosilicide contacts to ultra-shallow p⁺n junctions of nanoscale CMOS integrated circuits by selective deposition of in-situ doped silicon-germanium alloys." 2003. http://www.lib.ncsu.edu/theses/available/etd-04192003-163310/unrestricted/etd.pdf.

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Book chapters on the topic "Nanoscale p-n junction"

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"- Heteroepitaxy of ZnO on SiC as a Route toward Nanoscale p–n Junction." In Handbook of Zinc Oxide and Related Materials. CRC Press, 2012. http://dx.doi.org/10.1201/b13068-26.

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Khranovskyy, Volodymyr, and Rositza Yakimova. "Heteroepitaxy of ZnO on SiC as a Route toward Nanoscale p–n Junction." In Handbook of Zinc Oxide and Related Materials. CRC Press, 2012. http://dx.doi.org/10.1201/b13071-3.

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Pal, Debarati, and Swapnil Patil. "Advancement of Topological Nanostructures for Various Applications." In Advanced Materials and Nano Systems: Theory and Experiment (Part-1). BENTHAM SCIENCE PUBLISHERS, 2022. http://dx.doi.org/10.2174/9789815050745122010013.

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Topological materials are characterized by a unique band topology that is prominently distinct from ordinary metals and insulators. This new type of quantum material exhibits insulating bulk and conducting surface states that are robust against time-reversal invariant perturbations. In 2009, Bi2Se3 , Sb2Te3 and Bi2Te3 were predicted as 3D Topological insulators (TIs) with a single Dirac cone at the surface state. For application purposes, however, bulk conductivity due to Se vacancy in Bi2Se3 or anti site defects in Bi2Te3 has been a challenging issue. In order to achieve an enhanced surface c
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SMERDON, J. A., N. C. GIEBINK, and J. R. GUEST. "REVERSIBLE RECTIFICATION IN SUB-MONOLAYER MOLECULAR P-N JUNCTIONS: TOWARDS NANOSCALE PHOTOVOLTAIC STUDIES." In Scanning Probe Microscopy for Energy Research. WORLD SCIENTIFIC, 2013. http://dx.doi.org/10.1142/9789814434713_0005.

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Conference papers on the topic "Nanoscale p-n junction"

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Schmidt, Christian, Cheryl Hartfield, Stephen T. Kelly, Luke England, and Sukeshwar Kannan. "Nanoscale 3D X-ray Microscopy for High Density Multi-Chip Packaging FA." In ISTFA 2018. ASM International, 2018. http://dx.doi.org/10.31399/asm.cp.istfa2018p0424.

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Abstract An effective method is presented to locate certain failure sites on exposed junction of insulated-gate bipolar transistor (IGBT) devices. High emitter to collector leakage current, hereafter called ICESR, is an IGBT failure mode. The leakage current is typically related to the exposed P+/N+ junction on the die sidewall. Solder die attach residue bridging or silicon damage at this exposed P+/N+ junction are common causes of ICESR leakage. The die attach residue can be dislodged during decapsulation resulting in loss of failure information. A failure analysis flow will be described to p
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Hua, Renjie, Xiaogeng Gu, Zhiyuan Huang, and Yuan Dong. "Ballistic-Diffusive Phonon Transport and Anderson Localization in Aromatic-Ring Single-Molecule Junctions." In ASME 2024 7th International Conference on Micro/Nanoscale Heat and Mass Transfer. American Society of Mechanical Engineers, 2024. http://dx.doi.org/10.1115/mnhmt2024-123562.

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Abstract We studied the cross-interface heat conduction in a nanodiamond-molecule-carbon nanotube heterostructure by nonequilibrium molecular dynamics simulations, where single-molecule junction is an asymmetric molecular structure of p-phenylenes with NH-C=O as the anchoring group. We found an interesting phenomenon that when the number of phenyls is odd (i.e. n = 1, 3, and 5), interfacial thermal conductance increases with temperature increasing from 100 K to 400 K, and then decreases after temperature greater than 400 K. When the number of phenyls is even (i.e. n = 2, 4, and 6), the interfa
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Udhiarto, Arief, Sri Purwiyanti, Daniel Moraru, Takeshi Mizuno, and Michiharu Tabe. "Observation of nanosize effect in lateral nanoscale p-n and p-i-n junctions." In 2013 International Conference on QiR (Quality in Research). IEEE, 2013. http://dx.doi.org/10.1109/qir.2013.6632527.

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Purwiyanti, Sri, Daniel Moraru, Takeshi Mizuno, Michiharu Tabe, and Djoko Hartanto. "Observation of negative differential conductance in nanoscale p-n junctions." In 2013 International Conference on QiR (Quality in Research). IEEE, 2013. http://dx.doi.org/10.1109/qir.2013.6632532.

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Liu, Yu-Hsin, Yuchun Zhou, and Yu-Hwa Lo. "Efficient detection of 1310 nm light using silicon nanoscaled p/n junctions." In 2013 IEEE Photonics Conference (IPC). IEEE, 2013. http://dx.doi.org/10.1109/ipcon.2013.6656428.

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Bagraev, Nikolay, Leonid Klyachkin, Roman Kuzmin, Anna Malyarenko, and Vladimir Mashkov. "The effect of dipole boron centers on the electroluminescence of nanoscale silicon p+−n junctions." In INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013: Proceedings of the 27th International Conference on Defects in Semiconductors, ICDS-2013. AIP Publishing LLC, 2014. http://dx.doi.org/10.1063/1.4865598.

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Bolotov, Leonid, Toshiko Okui, Hiroshi Itoh, and Toshihiko Kanayama. "Nanoscale Profiling of Surface Potential Across Silicon p-n Junctions by Scanning Resonance Tunneling Spectroscopy." In 2003 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2003. http://dx.doi.org/10.7567/ssdm.2003.d-8-4l.

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Kurosaki, Jun-Ichiro, Saburo Tanaka, Koji Miyazaki, and Hiroshi Tsukamoto. "The Development of the Micro-Generator on the Substrate Based Thin Film." In ASME 2008 First International Conference on Micro/Nanoscale Heat Transfer. ASMEDC, 2008. http://dx.doi.org/10.1115/mnht2008-52198.

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We fabricated bismuth-telluride based thin films and their in-plane thermoelectric micro-generators (4mm×4mm) on a glass substrate by using the flash evaporation method through shadow masks. We prepared fine powders of Bi2.0Te2.7Se0.3 (n-type) and Bi0.4Te3.0Sb1.6 (p-type). The shadow masks are fabricated by standard micro-fabrication processes such as nitridation of silicon, dry etching and wet etching. The output voltages of micro-generators are lower than that of a thermoelectric generator based on bulk materials. The main reason is because the temperature difference between cool and hot jun
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