Relevant bibliographies by topics / Optoelectronic transistors

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Optoelectronic transistors'

Author: Grafiati
Published: 14 March 2023
Last updated: 31 July 2025

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Journal articles on the topic "Optoelectronic transistors"

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Wang, Yiru, Shanshuo Liu, Hongxin Zhang, et al. "Adaptive optoelectronic transistor for intelligent vision system." Journal of Semiconductors 46, no. 2 (2025): 021404. https://doi.org/10.1088/1674-4926/24100042.

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Abstract Recently, for developing neuromorphic visual systems, adaptive optoelectronic devices become one of the main research directions and attract extensive focus to achieve optoelectronic transistors with high performances and flexible functionalities. In this review, based on a description of the biological adaptive functions that are favorable for dynamically perceiving, filtering, and processing information in the varying environment, we summarize the representative strategies for achieving these adaptabilities in optoelectronic transistors, including the adaptation for detecting inform
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Shao, Shuangshuang, Suyun Wang, Chenyong Xu, Jianwen Zhao, and Zheng Cui. "70‐1: Fully‐Printed High‐Resolution Low‐Voltage IGZO Optoelectronic Synaptic Transistor Arrays for Visual Neural Computation." SID Symposium Digest of Technical Papers 56, S1 (2025): 613–16. https://doi.org/10.1002/sdtp.18882.

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Printable oxide transistors serve as crucial optoelectronic synaptic devices for emulating the human visual cognitive system. However, the widespread application of printed oxide synaptic transistors in complex neuromorphic computing has been hindered by challenges in achieving high resolution and superior electrical performance. In this study, we present fully‐printed, high‐resolution indium gallium zinc oxide (IGZO) optoelectronic synaptic transistor arrays featuring high‐precision indium tin oxide (ITO) as electrodes with an ultra‐short channel length of 1.5 µm. The fabricated IGZO synaptic
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Soldano, Caterina. "Engineering Dielectric Materials for High-Performance Organic Light Emitting Transistors (OLETs)." Materials 14, no. 13 (2021): 3756. http://dx.doi.org/10.3390/ma14133756.

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Organic light emitting transistors (OLETs) represent a relatively new technology platform in the field of optoelectronics. An OLET is a device with a two-fold functionality since it behaves as a thin-film transistor and at the same time can generate light under appropriate bias conditions. This Review focuses mainly on one of the building blocks of such device, namely the gate dielectrics, and how it is possible to engineer it to improve device properties and performances. While many findings on gate dielectrics can be easily applied to organic light emitting transistors, we here concentrate o
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Soref, Richard. "Applications of Silicon-Based Optoelectronics." MRS Bulletin 23, no. 4 (1998): 20–24. http://dx.doi.org/10.1557/s0883769400030220.

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Silicon-based optoelectronics is a diversified technology that has grown steadily but not exponentially over the past decade. Some applications—such as smart-pixel signal processing and chip-to-chip optical interconnects—have enjoyed impressive growth, whereas other applications have remained quiescent. A few important applications such as optical diagnosis of leaky metal-oxide-semiconductor-field-effect-transistor circuits, have appeared suddenly. Over the years, research and development has unveiled some unique and significant aspects of Si-based optoelectronics. The main limitation of this
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Ma, Xinqi, Wenbin Zhang, Qi Zheng, et al. "Reconfigurable organic ambipolar optoelectronic synaptic transistor for information security access." Journal of Semiconductors 46, no. 2 (2025): 022406. https://doi.org/10.1088/1674-4926/24090051.

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Abstract In this data explosion era, ensuring the secure storage, access, and transmission of information is imperative, encompassing all aspects ranging from safeguarding personal devices to formulating national information security strategies. Leveraging the potential offered by dual-type carriers for transportation and employing optical modulation techniques to develop high reconfigurable ambipolar optoelectronic transistors enables effective implementation of information destruction after reading, thereby guaranteeing data security. In this study, a reconfigurable ambipolar optoelectronic
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Lan, Shuqiong, Jinkui Si, Wangying Xu, Lan Yang, Jierui Lin, and Chen Wu. "Ternary Heterojunction Synaptic Transistors Based on Perovskite Quantum Dots." Nanomaterials 15, no. 9 (2025): 688. https://doi.org/10.3390/nano15090688.

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The traditional von Neumann architecture encounters significant limitations in computational efficiency and energy consumption, driving the development of neuromorphic devices. The optoelectronic synaptic device serves as a fundamental hardware foundation for the realization of neuromorphic computing and plays a pivotal role in the development of neuromorphic chips. This study develops a ternary heterojunction synaptic transistor based on perovskite quantum dots to tackle the critical challenge of synaptic weight modulation in organic synaptic devices. Compared to binary heterojunction synapti
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Pan, James N. "Chromatic and Panchromatic Nonlinear Optoelectronic CMOSFETs for CMOS Image Sensors, Laser Multiplexing, Computing, and Communication." MRS Advances 5, no. 37-38 (2020): 1965–74. http://dx.doi.org/10.1557/adv.2020.273.

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AbstractTraditionally, CMOS transistors are for low power, high speed, and high packing density applications. CMOS is also commonly used as power regulating devices, and light sensors (CCD or CMOS image sensors). In this paper, we would like to introduce Photonic CMOS as a light emitting device for optical computing, ASIC, power transistors, and ultra large scale integration (ULSI). A Photonic CMOS Field Effect Transistor is fabricated with a low-resistance laser or LED in the drain region, and multiple photon sensors in the channel / well regions. The MOSFET, laser, and photon sensors are fab
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Huseynova, Gunel, and Vladislav Kostianovskii. "Doped organic field-effect transistors." Material Science & Engineering International Journal 2, no. 6 (2018): 212–15. http://dx.doi.org/10.15406/mseij.2018.02.00059.

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Organic semiconductors and electronic devices based on these materials continue attracting great interest due to their excellent and unique optoelectronic properties as well as the advantageous possibilities of realizing flexible, light-weight, low-cost, and transparent optoelectronic devices fabricated on ultra-thin and solution-processible active layers. However, their poor electronic performance and unstable operation under ambient conditions limit their application in consumer electronics. This paper presents a brief introduction to doping of organic semiconductors and organic field-effect
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Yu, Jia, Shiru Wu, Xun Zhao, et al. "Progress on Two-Dimensional Transitional Metal Dichalcogenides Alloy Materials: Growth, Characterisation, and Optoelectronic Applications." Nanomaterials 13, no. 21 (2023): 2843. http://dx.doi.org/10.3390/nano13212843.

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Two-dimensional (2D) transitional metal dichalcogenides (TMDs) have garnered remarkable attention in electronics, optoelectronics, and hydrogen precipitation catalysis due to their exceptional physicochemical properties. Their utilisation in optoelectronic devices is especially notable for overcoming graphene’s zero-band gap limitation. Moreover, TMDs offer advantages such as direct band gap transitions, high carrier mobility, and efficient switching ratios. Achieving precise adjustments to the electronic properties and band gap of 2D semiconductor materials is crucial for enhancing their capa
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Zhang, Junyao, Yang Lu, Shilei Dai, et al. "Retina-Inspired Organic Heterojunction-Based Optoelectronic Synapses for Artificial Visual Systems." Research 2021 (February 22, 2021): 1–10. http://dx.doi.org/10.34133/2021/7131895.

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For the realization of retina-inspired neuromorphic visual systems which simulate basic functions of human visual systems, optoelectronic synapses capable of combining perceiving, processing, and memorizing in a single device have attracted immense interests. Here, optoelectronic synaptic transistors based on tris(2-phenylpyridine) iridium (Ir(ppy)3) and poly(3,3-didodecylquarterthiophene) (PQT-12) heterojunction structure are presented. The organic heterojunction serves as a basis for distinctive synaptic characteristics under different wavelengths of light. Furthermore, synaptic transistor a
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Dissertations / Theses on the topic "Optoelectronic transistors"

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Bird, Matthew J. "Optoelectronic processes in polyfluorene ambipolar transistors." Thesis, University of Cambridge, 2011. https://www.repository.cam.ac.uk/handle/1810/256013.

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This thesis describes the use of charge modulation spectroscopy to investigate the negative and positive charge-induced absorptions in conjugated semiconducting polymers as a way to experimentally compare the wavefunctions of electrons and holes. Interactions between light and charges including fluorescence quenching and photocurrent are also explored. Conjugated polymers have an electronic structure with an energy gap between the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO). In the neutral ground state, there are no optical transitions at photon
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Liu, Chin Pang. "Optoelectronic mixing in heterojunction bipolar transistors." Thesis, University College London (University of London), 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.312033.

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Huang, Yong. "InAlGaAs/InP light emitting transistors and transistor lasers operating near 1.55 μm". Diss., Georgia Institute of Technology, 2010. http://hdl.handle.net/1853/37298.

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Light emitting transistors (LETs) and transistor lasers (TLs) are newly-emerging optoelectronic devices capable of emitting spontaneous or stimulated light while performing transistor actions. This dissertation describes the design, growth, and performances of long wavelength LETs and TLs based on InAlGaAs/InP material system. First, the doping behaviors of zinc (Zn) and carbon (C) in InAlGaAs layers for p-type doping were investigated. Using both dopants, the N-InP/p-In0.52(AlxGa1-x)0.48As/N-In0.52Al0.48As LETs with InGaAs quantum wells (QWs) in the base demonstrate both light emission and
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Loga, Rodney Izzat. "HBT/DHBTs for monolithic optoelectronic interfaces." Thesis, King's College London (University of London), 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.268719.

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Tan, Eugene. "Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC), double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT)." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape11/PQDD_0006/NQ42767.pdf.

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Chaudhary, Mahima. "Colloidal nanocrystals for optoelectronic devices optically controlled at the nanometric scale." Electronic Thesis or Diss., Université Paris sciences et lettres, 2022. http://www.theses.fr/2022UPSLS072.

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L'optoélectronique est un domaine technologique en croissance rapide qui implique l'utilisation d'appareils électroniques pour générer, détecter et contrôler la lumière. Ces dispositifs peuvent être utilisés dans une variété d'applications telles que les commutateurs photoconducteurs, les systèmes de contrôle d'accès automatique, les télécommunications, la mémoire et bien d'autres. Parce qu'il s'agit d'un domaine si vaste, la variété des dispositifs qui relèvent de l'optoélectronique est vaste. Dans ceThèse de doctorat, Je suis particulièrement intéressédanstraitable en solutionnanomatériaux c
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Ho, Kai Wai. "Evaluation and characterization of efficient organic optoelectronic materials and devices." HKBU Institutional Repository, 2020. https://repository.hkbu.edu.hk/etd_oa/816.

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With the progression towards lighter but larger-display self-sustainable mobile devices, device efficiency becomes increasingly important, owing to the higher power display consumption but at the same time more limitation on the size and volume of energy storage. In this thesis, selected aspects regarding to efficiency of three types of optoelectronic devices, indoor photovoltaics (IPVs), perovskite thin-film transistors (TFTs) and organic light-emitting diodes (OLEDs) have been investigated. IPVs can make off-grid devices self-sustainable by harvesting ambient light energy. Its weak irradiance nece
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Ho, Ka Wai. "Evaluation and characterization of efficient organic optoelectronic materials and devices." HKBU Institutional Repository, 2020. https://repository.hkbu.edu.hk/etd_oa/873.

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With the progression towards lighter but larger-display self-sustainable mobile devices, device efficiency becomes increasingly important, owing to the higher power display consumption but at the same time more limitation on the size and volume of energy storage. In this thesis, selected aspects regarding to efficiency of three types of optoelectronic devices, indoor photovoltaics (IPVs), perovskite thin-film transistors (TFTs) and organic light-emitting diodes (OLEDs) have been investigated. IPVs can make off-grid devices self-sustainable by harvesting ambient light energy. Its weak irradiance nece
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Fiebig, Matthias. "Spatially resolved electronic and optoelectronic measurements of pentacene thin film transistors." Diss., lmu, 2010. http://nbn-resolving.de/urn:nbn:de:bvb:19-122033.

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Unal, Selim. "Field-effect transistors and optoelectronic devices based on emerging atomically thin materials." Thesis, University of Exeter, 2017. http://hdl.handle.net/10871/27140.

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Development of field-effect transistors and their applications is advancing at a relentless pace. Since the discovery of graphene, a single layer of carbon atoms, the ability to isolate and fabricate devices on atomically thin materials has marked a paradigm shift in the timeline of transistor technologies. In this thesis, electrical and optical properties of atomically thin structures of graphene and tungsten disulfide (WS2) are investigated. Transport in graphene side-gated transistors and contact resistance at the metal-WS2 interface are presented. Finally, the optoelectronic performance of
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Books on the topic "Optoelectronic transistors"

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Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications (1997 London, England). 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO. IEEE, 1997.

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Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications (1993 London, UK). High performance electron devices for microwave and optoelectronic applications, EDMO '93, King's College London, 18th October, 1993: Announcement & programme for workshop. IEEE, 1993.

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Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications (1996 University of Leeds). 1996 High Performance Electron Devices for Microwave and Optoelectronic Applications Workshop, EDMO. IEEE, 1996.

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Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications (1995 London, England). 1995 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications: EDMO. IEEE Service Center, 1995.

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Simons, Rainee. Optoelectric gain control of a microwave single stage GaAs MESFET amplifier. National Aeronautics and Space Administration, 1988.

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Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications (1996 London, England). 1996 High performance electron devices for microwave and optoelectronic applications workshop: EDMO 96 : [Weetwood Hall, the University of Leeds, 25-26 November 1996]. IEEE Service Center, 1996.

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Advanced, Workshop on Frontiers in Electronics (1997 Santa Cruz de Tenerife Spain). 1997 Advanced Workshop on Frontiers in Electronics: WOFE '97 proceedings : Puerto de la Cruz, Tenerife, Spain, 6-11 January 1997. Institute of Electrical and Electronics Engineers, 1997.

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Im, Seongil. Photo-Excited Charge Collection Spectroscopy: Probing the traps in field-effect transistors. Springer Netherlands, 2013.

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1995 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications: EDMO. IEEE Service Center, 1995.

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Forrest, Stephen R. Organic Electronics. Oxford University Press, 2020. http://dx.doi.org/10.1093/oso/9780198529729.001.0001.

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Organic electronics is a platform for very low cost and high performance optoelectronic and electronic devices that cover large areas, are lightweight, and can be both flexible and conformable to irregularly shaped surfaces such as foldable smart phones. Organics are at the core of the global organic light emitting device (OLED) display industry, and also having use in efficient lighting sources, solar cells, and thin film transistors useful in medical and a range of other sensing, memory and logic applications. This book introduces the theoretical foundations and practical realization of devi
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Book chapters on the topic "Optoelectronic transistors"

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Cooper, Donald E., and Steven C. Moss. "Picosecond Optoelectronic Diagnostics of Field Effect Transistors." In Picosecond Electronics and Optoelectronics. Springer Berlin Heidelberg, 1985. http://dx.doi.org/10.1007/978-3-642-70780-3_11.

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Kusmartsev, F. V., W. M. Wu, M. P. Pierpoint, and K. C. Yung. "Application of Graphene Within Optoelectronic Devices and Transistors." In Progress in Optical Science and Photonics. Springer Singapore, 2014. http://dx.doi.org/10.1007/978-981-287-242-5_9.

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Lambrechts, Wynand, and Saurabh Sinha. "Frequency Response of Optoelectronic Receivers: The Motivation for Faster Transistors." In Signals and Communication Technology. Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-47403-8_6.

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Prelipceanu, Marius, and Adrian Graur. "Study of New Organic Field Transistors for RFID, Optoelectronic and Mobile Applications." In Lecture Notes in Electrical Engineering. Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-05440-7_11.

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Sahri, Nabil, Tadao Nagatsuma, Taiichi Otsuji, Naofumi Shimizu, and Makoto Yaita. "Characterization of > 300 GHz Transistors Using a Novel Optoelectronic Network Analyzer." In Springer Series in Chemical Physics. Springer Berlin Heidelberg, 1998. http://dx.doi.org/10.1007/978-3-642-72289-9_58.

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Albrecht, H. "Pin Photodiodes and Field-Effect Transistors for Monolithically Integrated InP/InGaAs Optoelectronic Circuits." In Micro System Technologies 90. Springer Berlin Heidelberg, 1990. http://dx.doi.org/10.1007/978-3-642-45678-7_110.

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Tamura, Hiroyuki. "Theoretical Analysis on Optoelectronic Properties of Organic Materials: Solar Cells and Light-Emitting Transistors." In Progress in Nanophotonics 3. Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-11602-0_2.

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Wang, Chengliang, Lang Jiang, and Wenping Hu. "Organic/Polymeric Field-Effect Transistors." In Organic Optoelectronics. Wiley-VCH Verlag GmbH & Co. KGaA, 2013. http://dx.doi.org/10.1002/9783527653454.ch3.

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Meng, Qing, Huanli Dong, and Wenping Hu. "Organic/Polymeric Semiconductors for Field-Effect Transistors." In Organic Optoelectronics. Wiley-VCH Verlag GmbH & Co. KGaA, 2013. http://dx.doi.org/10.1002/9783527653454.ch2.

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Tang, Qinqxin, Yanhong Tong, and Wenping Hu. "Organic Circuits and Organic Single-Molecule Transistors." In Organic Optoelectronics. Wiley-VCH Verlag GmbH & Co. KGaA, 2013. http://dx.doi.org/10.1002/9783527653454.ch4.

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Conference papers on the topic "Optoelectronic transistors"

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Liu, Shuang, Heyi Huang, Yanqing Li, et al. "High-Performance Carbon Nanotube Optoelectronic Transistors for Memory Applications." In 2024 IEEE 17th International Conference on Solid-State & Integrated Circuit Technology (ICSICT). IEEE, 2024. https://doi.org/10.1109/icsict62049.2024.10830955.

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Yu, Hongquan, Yangjiang Wu, Tiger H. Tao, and Kaihuan Zhang. "Plasma treatment enhanced optical sensing capability of organic field effect transistors." In International Conference on Optoelectronic Science and Intelligent Sensing (ICOIS25), edited by Jinhui Song and Weigang Hou. SPIE, 2025. https://doi.org/10.1117/12.3069949.

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Zhang, Lemeng, and Longhai Shen. "Fabrication of high-frequency silicon-graphene-germanium transistors using silicon and graphene transfer." In 6th International Conference on Optoelectronic Materials and Devices (ICOMD24), edited by Tingchao He and Ching Yern Chee. SPIE, 2025. https://doi.org/10.1117/12.3058821.

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Zeng, Wei, JiYu Zhao, Hang Li, Guanglong Ding, Ye Zhou, and Su-Ting Han. "Two-Dimensional ReSe2 Based Optoelectronic Synaptic Transistor." In 2025 9th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE, 2025. https://doi.org/10.1109/edtm61175.2025.11040372.

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Cooper, Donald E. "Picosecond Optoelectronic Diagnostics of Field Effect Transistors." In Picosecond Electronics and Optoelectronics. Optica Publishing Group, 1985. http://dx.doi.org/10.1364/peo.1985.thc3.

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Picosecond optoelectronics provides the capability to measure the frequency response of solidstate devices with much greater bandwidth than conventional techniques.1 Short electrical pulses are fed into device terminals, and the output is optoelectronically sampled to measure the device impulse response function. The Fourier transform of this data yields the frequency response curve. All elements of the scattering matrix (S matrix) can be obtained through the use of various combinations of device terminals as input and output ports. Thus all information obtained from conventional CW network an
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Nirmal, Amoolya, Darrell Jun Jie Tay, Natalia Yantara, Timothy Ng Si En, Divyam Sharma, and Nripan Mathews. "Optoelectronic learning in halide perovskite thin film transistors." In Organic and Hybrid Transistors XXII, edited by Oana D. Jurchescu and Iain McCulloch. SPIE, 2023. http://dx.doi.org/10.1117/12.2677979.

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Grot, Annette, Steven Lin, and Demetri Psaltis. "Optoelectronic neurons using MSM detectors in GaAs." In OSA Annual Meeting. Optica Publishing Group, 1991. http://dx.doi.org/10.1364/oam.1991.mk4.

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We present a new GaAs integrated optoelectronic neuron for use in neural networks. We have previously demonstrated that the integration of photodetectors, thresholding transistors, and a light source on a single substrate allows one to have high neuron density with acceptable power dissipation. In this paper we report a circuit in which we used a double heterostructure LED (light emitting diode) as the light source. We use an LED rather than laser diodes because LEDs can be operated with small currents, due to the lack of a threshold current. To minimize the total mesa height and maintain high
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Shur, Michael S., and Mohamed A. Khan. "Optoelectronic GaN-based field effect transistors." In Photonics West '95, edited by Manijeh Razeghi, Yoon-Soo Park, and Gerald L. Witt. SPIE, 1995. http://dx.doi.org/10.1117/12.206879.

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Schuermeyer, Fritz. "Optoelectronic pseudomorphic high-electron-mobility transistors." In Photonics West '97, edited by Yoon-Soo Park and Ramu V. Ramaswamy. SPIE, 1997. http://dx.doi.org/10.1117/12.264208.

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Bryan, Robert P., Jack L. Jewell, Greg R. Olbright, and Winston S. Fu. "Smart pixel optoelectronic interconnects: integrated microlasers/transistors." In OE/LASE'93: Optics, Electro-Optics, & Laser Applications in Science& Engineering, edited by Ray T. Chen. SPIE, 1993. http://dx.doi.org/10.1117/12.147100.

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Reports on the topic "Optoelectronic transistors"

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Cooper, Donald E., and Steven C. Moss. Picosecond Optoelectronic Diagnostics of Field Effect Transistors,. Defense Technical Information Center, 1986. http://dx.doi.org/10.21236/ada170503.

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Pasupuleti, Murali Krishna. 2D Quantum Materials for Next-Gen Semiconductor Innovation. National Education Services, 2025. https://doi.org/10.62311/nesx/rrvi425.

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Abstract The emergence of two-dimensional (2D) quantum materials is revolutionizing next-generation semiconductor technology, offering superior electronic, optical, and quantum properties compared to traditional silicon-based materials. 2D materials, such as graphene, transition metal dichalcogenides (TMDs), hexagonal boron nitride (hBN), and black phosphorus, exhibit high carrier mobility, tunable bandgaps, exceptional mechanical flexibility, and strong light-matter interactions, making them ideal candidates for ultra-fast transistors, spintronics, optoelectronic devices, and quantum computin
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Cooper, Donald E., and Steven C. Moss. Picosecond Optoelectronic Measurement of the High Frequency Scattering Parameters of a GaAs FET (Field Effect Transistor). Defense Technical Information Center, 1986. http://dx.doi.org/10.21236/ada170618.

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