Relevant bibliographies by topics / Ovonic Threshold Selector (OTS)

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  1. Journal articles
  2. Dissertations / Theses
  3. Conference papers

Academic literature on the topic 'Ovonic Threshold Selector (OTS)'

Author: Grafiati
Published: 25 May 2024
Last updated: 31 July 2025

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Journal articles on the topic "Ovonic Threshold Selector (OTS)"

1

Zhang, Shiqing, Bing Song, Shujing Jia, et al. "Multilayer doped-GeSe OTS selector for improved endurance and threshold voltage stability." Journal of Semiconductors 43, no. 10 (2022): 104101. http://dx.doi.org/10.1088/1674-4926/43/10/104101.

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Abstract Selector devices are indispensable components of large-scale memristor array systems. The thereinto, ovonic threshold switching (OTS) selector is one of the most suitable candidates for selector devices, owing to its high selectivity and scalability. However, OTS selectors suffer from poor endurance and stability which are persistent tricky problems for application. Here, we report on a multilayer OTS selector based on simple GeSe and doped-GeSe. The experimental results show improving selector performed extraordinary endurance up to 1010 and the fluctuation of threshold voltage is 2.
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Kim, Jaeyeon, Wansun Kim, Jusung Kim, and Hyunchul Sohn. "Locally formed conductive filaments in an amorphous Ga2Te3 ovonic threshold switching device." AIP Advances 13, no. 3 (2023): 035221. http://dx.doi.org/10.1063/5.0140715.

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Ovonic threshold switching (OTS) selector devices based on chalcogenide materials are promising candidates for addressing the sneak current in high-density cross-point array structures owing to their high selectivity, high endurance, and fast switching speed. However, the OTS mechanism remains controversial and needs to be clarified. In this study, the formation of local conductive filaments (CFs) during threshold switching in an amorphous Ga2Te3 OTS selector device was investigated by electrical measurements and conductive-atomic force microscopy (C-AFM). The amorphous Ga2Te3 OTS selector dev
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Wang, Lun, Jinyu Wen, Rongjiang Zhu, Jiangxi Chen, Hao Tong, and Xiangshui Miao. "Failure mechanism investigation and endurance improvement in Te-rich Ge–Te based ovonic threshold switching selectors." Applied Physics Letters 121, no. 19 (2022): 193501. http://dx.doi.org/10.1063/5.0127177.

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The endurance of ovonic threshold switching (OTS) selectors is a key element for memory application. However, multi-element system for OTS in recent studies will induce element or phase segregation and lead to device failure. Since pure Te based device characterizes relatively high off current, in this work, we studied a Te-rich Ge–Te based OTS selector. We first conducted a failure analysis on Ge–Te based OTS selector. Through first-principles calculations, we found that a relatively larger Ge concentration in the Ge–Te system may lead to a worse device endurance after continuous operation du
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Wu, Renjie, Yuting Sun, Shuhao Zhang, Zihao Zhao, and Zhitang Song. "Great Potential of Si-Te Ovonic Threshold Selector in Electrical Performance and Scalability." Nanomaterials 13, no. 6 (2023): 1114. http://dx.doi.org/10.3390/nano13061114.

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The selector is an indispensable section of the phase change memory (PCM) chip, where it not only suppresses the crosstalk, but also provides high on-current to melt the incorporated phase change material. In fact, the ovonic threshold switching (OTS) selector is utilized in 3D stacking PCM chips by virtue of its high scalability and driving capability. In this paper, the influence of Si concentration on the electrical properties of Si-Te OTS materials is studied; the threshold voltage and leakage current remain basically unchanged with the decrease in electrode diameter. Meanwhile, the on-cur
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Noé, Pierre, Anthonin Verdy, Francesco d’Acapito, et al. "Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed." Science Advances 6, no. 9 (2020): eaay2830. http://dx.doi.org/10.1126/sciadv.aay2830.

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Fifty years after its discovery, the ovonic threshold switching (OTS) phenomenon, a unique nonlinear conductivity behavior observed in some chalcogenide glasses, has been recently the source of a real technological breakthrough in the field of data storage memories. This breakthrough was achieved because of the successful 3D integration of so-called OTS selector devices with innovative phase-change memories, both based on chalcogenide materials. This paves the way for storage class memories as well as neuromorphic circuits. We elucidate the mechanism behind OTS switching by new state-of-the-ar
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Seong, Dongjun, Su Yeon Lee, Hyun Kyu Seo, Jong-Woo Kim, Minsoo Park, and Min Kyu Yang. "Highly Reliable Ovonic Threshold Switch with TiN/GeTe/TiN Structure." Materials 16, no. 5 (2023): 2066. http://dx.doi.org/10.3390/ma16052066.

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A new architecture has become necessary owing to the power consumption and latency problems of the von Neumann architecture. A neuromorphic memory system is a promising candidate for the new system as it has the potential to process large amounts of digital information. A crossbar array (CA), which consists of a selector and a resistor, is the basic building block for the new system. Despite the excellent prospects of crossbar arrays, the biggest obstacle for them is sneak current, which can cause a misreading between the adjacent memory cells, thus resulting in a misoperation in the arrays. T
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Laguna, C., M. Bernard, J. Garrione, et al. "Inside the ovonic threshold switching (OTS) device based on GeSbSeN: Structural analysis under electrical and thermal stress." Journal of Applied Physics 133, no. 7 (2023): 074501. http://dx.doi.org/10.1063/5.0134947.

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In this article, we present the structural investigation by Raman spectroscopy of GeSbSeN ovonic threshold switching (OTS) material once integrated in selector devices featuring a top electrode based on a transparent and conductive indium tin oxide layer. The devices are characterized by standard electrical protocols, and the structural evolution of the material is investigated after several switching operations. The results are correlated with the spectra obtained from blanket samples annealed at increasing temperature and are supported by XRD and TEM analyses. We establish a link between the
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Kim, Myoungsub, Youngjun Kim, Minkyu Lee, et al. "PE-ALD of Ge1−xSx amorphous chalcogenide alloys for OTS applications." Journal of Materials Chemistry C 9, no. 18 (2021): 6006–13. http://dx.doi.org/10.1039/d1tc00650a.

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Three-dimensional (3D) cross-point (X-point) technology, including amorphous chalcogenide-based ovonic threshold switching (OTS) selectors, is bringing new changes to the memory hierarchy for high-performance computing systems.
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Seo, Hyun Kyu, and Min Kyu Yang. "Improving Reliability of 1 Selector-1 ReRAM Crossbar Arrays Through Hybrid Switching Methods." Materials 18, no. 4 (2025): 761. https://doi.org/10.3390/ma18040761.

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In this study, an innovative switching approach is explored to improve the reliability of 1 Selector-1 ReRAM (1S1R) devices, integrated into a 4K crossbar array (CBA). The key innovation is the use of DC sweeping for set operations and AC single-pulse resetting to minimize device stress and prevent breakdown. The selector, based on a GeSeTe ovonic threshold switching (OTS) element, demonstrated excellent endurance (>1012 cycles), fast switching (<100 ns), and high device-to-device uniformity (<5% variability). The ReRAM, constructed with Pt/LiNbOx/W, exhibited robust bipolar resistive
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Minguet Lopez, J., T. Hirtzlin, M. Dampfhoffer, et al. "OxRAM + OTS optimization for binarized neural network hardware implementation." Semiconductor Science and Technology 37, no. 1 (2021): 014001. http://dx.doi.org/10.1088/1361-6641/ac31e2.

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Abstract Low-power memristive devices embedded on graphics or central processing units logic core are a very promising non-von-Neumann approach to improve significantly the speed and power consumption of deep learning accelerators, enhancing their deployment on embedded systems. Among various non-ideal emerging neuromorphic memory devices, synaptic weight hardware implementation using resistive random-access memories (RRAMs) within 1T1R architectures promises high performance on low precision binarized neural networks (BNN). Taking advantage of the RRAM capabilities and allowing to substantial
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Dissertations / Theses on the topic "Ovonic Threshold Selector (OTS)"

1

Gasquez, Julien. "Conception de véhicules de tests pour l’étude de mémoires non-volatiles émergentes embarquées." Electronic Thesis or Diss., Aix-Marseille, 2022. http://www.theses.fr/2022AIXM0419.

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La mémoire à changement de phase (PCM) s’inscrit dans la stratégie de développement de mémoires non-volatiles embarquées sur les nœuds technologiques avancés (sub 28nm). En effet, la mémoire Flash-NOR devient de plus en plus onéreuse à intégrer dans les technologies avec des diélectriques à forte permittivité et des grilles métalliques. Cette thèse a donc pour objectif principal de réaliser des véhicules de tests afin d’étudier un point mémoire novateur PCM + OTS et de proposer des solutions afin de combler ses lacunes et ses limites suivant les applications envisagées. L’étude a pour support
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Conference papers on the topic "Ovonic Threshold Selector (OTS)"

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Hu, Z., Z. Chai, W. Zhang, and Jian Zhang. "Switch-Off Mechanisms in GeAsTe Ovonic Threshold Switching Selector Device." In 2024 IEEE 17th International Conference on Solid-State & Integrated Circuit Technology (ICSICT). IEEE, 2024. https://doi.org/10.1109/icsict62049.2024.10832098.

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Alayan, M., E. Vianello, G. Navarro, et al. "In-depth investigation of programming and reading operations in RRAM cells integrated with Ovonic Threshold Switching (OTS) selectors." In 2017 IEEE International Electron Devices Meeting (IEDM). IEEE, 2017. http://dx.doi.org/10.1109/iedm.2017.8268311.

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Bourgeois, G., V. Meli, R. Antonelli, et al. "Crossbar Arrays based on “Wall” Phase-Change Memory (PCM) and Ovonic- Threshold Switching (OTS) Selector: a Device Integration Challenge Towards New Computing Paradigms in Embedded Applications." In 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE, 2023. http://dx.doi.org/10.1109/edtm55494.2023.10102961.

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Kim, Young-Min, Su-Bong Lee, Siwon Park, Sangyeop Kim, and Jong-Souk Yeo. "Comprehensive Analysis of Switching Mechanism in Te-based Ovonic Threshold Switch (OTS)." In 13th Asia Pacific Microscopy Congress 2025. ScienceOpen, 2025. https://doi.org/10.14293/apmc13-2025-0301.

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Zhang, Shiqing, Bing Song, Shujing Jia, et al. "A Symmetric Multilayer GeSe/GeSeSbTe Ovonic Threshold Switching Selector with Improved Endurance and Stability." In 2021 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA). IEEE, 2021. http://dx.doi.org/10.1109/icta53157.2021.9661914.

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Woo, Jiyong, and Shimeng Yu. "Design Space Exploration of Ovonic Threshold Switch (OTS) for Sub-Threshold Read Operation in Cross-Point Memory Arrays." In 2019 IEEE International Symposium on Circuits and Systems (ISCAS). IEEE, 2019. http://dx.doi.org/10.1109/iscas.2019.8702296.

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Woo, Jiyong, and Shimeng Yu. "Device Design and Material Considerations of Ovonic Threshold Switch (OTS) for Cross-point MRAM Array." In 2019 Electron Devices Technology and Manufacturing Conference (EDTM). IEEE, 2019. http://dx.doi.org/10.1109/edtm.2019.8731137.

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Verdy, A., M. Bernard, N. Castellani, et al. "Engineering of Ovonic Threshold Switching Selector: A Link from the Material Properties to the Electrical Performances." In 2019 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2019. http://dx.doi.org/10.7567/ssdm.2019.h-7-03.

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Garbin, D., W. Devulder, R. Degraeve, et al. "Composition Optimization and Device Understanding of Si-Ge-As-Te Ovonic Threshold Switch Selector with Excellent Endurance." In 2019 IEEE International Electron Devices Meeting (IEDM). IEEE, 2019. http://dx.doi.org/10.1109/iedm19573.2019.8993547.

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Lee, Jangseop, Seonghun Kim, Sangmin Lee, et al. "Improving the SiGeAsTe Ovonic Threshold Switching (OTS) Characteristics by Microwave Annealing for Excellent Endurance (> 1011) and Low Drift Characteristics." In 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits). IEEE, 2022. http://dx.doi.org/10.1109/vlsitechnologyandcir46769.2022.9830179.

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