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Dissertations / Theses on the topic 'P-type GaAs'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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1

Klochan, Oleh V. Physics Faculty of Science UNSW. "Ballistic transport in one-dimensional p-type GaAs devices." Awarded by:University of New South Wales, 2007. http://handle.unsw.edu.au/1959.4/35186.

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In this thesis we study GaAs one dimensional hole systems with strong spin-orbit interaction effects. The primary focus is the Zeeman splitting of 1D subbands in the two orthogonal in-plane magnetic field directions. We study two types of 1D hole systems based on different (311)A grown heterostructures: a modulation doped GaAs/AlGaAs square quantum well and an undoped induced GaAs/AlGaAs triangular quantum well. The results from the modulation doped 1D wire show enhanced anisotropy of the effective Lande g-factor for the two in-plane field directions (parallel and perpendicular to the wire), c

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2

Grbić, Boris. "Hole transport and spin-orbit coupling in p-type GaAs nanostructures." kostenfrei, 2007. http://e-collection.ethbib.ethz.ch/view/eth:29710.

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3

Clarke, Warrick Robin Physics Faculty of Science UNSW. "Quantum interaction phenomena in p-GaAs microelectronic devices." Awarded by:University of New South Wales. School of Physics, 2006. http://handle.unsw.edu.au/1959.4/32259.

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In this dissertation, we study properties of quantum interaction phenomena in two-dimensional (2D) and one-dimensional (1D) electronic systems in p-GaAs micro- and nano-scale devices. We present low-temperature magneto-transport data from three forms of low-dimensional systems 1) 2D hole systems: in order to study interaction contributions to the metallic behavior of 2D systems 2) Bilayer hole systems: in order to study the many body, bilayer quantum Hall state at nu = 1 3) 1D hole systems: for the study of the anomalous conductance plateau G = 0.7 ???? 2e2/h The work is divided into five ex

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4

Saha, Uttam Kumar. "Photoluminescence and kinetic of MOCVD grown P-type GaAs:Nd and Nd-implanted semi-insulating GaAs." Ohio University / OhioLINK, 1996. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1178044230.

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5

Liu, Gordon Gang. "Electrochemical behaviour of gallium arsenide." Thesis, University of British Columbia, 1991. http://hdl.handle.net/2429/30080.

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Polarization behaviours of copper diffused p-type GaAs was studied in 1. 0M NaCl and 1. 0M NaNO₃ by means of pitting scan and linear sweep potentiodynamic polarization techniques. The thermodynamic potential-pH diagram of the GaAs-H₂O system was constructed. The observed electrode behaviours of GaAs were compared and correlated to the potential-pH diagram. Freely corroding potential, passivation behaviour and pitting potential were examined as a function of a number of factors. These included the effects of different annealing and polishing pretreatments, the bulk solution pH and polarization

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6

Rahbi, Rania. "Etude de la diffusion de l'hydrogène et des interactions hydrogène accepteur dans gaas de type p." Paris 7, 1991. http://www.theses.fr/1991PA077075.

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L'exposition de semi-conducteurs gaas de type p à un plasma radio fréquence d'hydrogène entraîne une diffusion d'hydrogène dans le matériau. L'analyse qualitative des profils de diffusion du deutérium conduit à la conclusion que l'hydrogène diffuse relativement librement dans les matériaux peu dopés et interagit fortement avec les accepteurs lorsque le taux de dopage est élevé. Ceci est valable aussi bien pour les accepteurs de la colonne 2 que pour ceux de la colonne 4. La diffusion de l'hydrogène dans les matériaux gaas dopés zinc, silicium et germanium entraîne une diminution de la concentr

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7

JOURDAN, NICOLAS. "Etude des dopants de type p pour l'epitaxie par jets moleculaires de transistors bipolaires a heterostructure gaas/gaa1as." Paris 7, 1991. http://www.theses.fr/1991PA077047.

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Ce travail presente l'etude des dopants de type-p (be,c) pour l'epitaxie par jets moleculaires afin de fabriquer des transistors bipolaires a heterostructure gaas/ga#1#-#xal#xas tres performants. En ce qui concerne le dopant be, une etude des differents mecanismes de redistribution de l'impurete a ete entreprise. L'optimisation des parametres de croissance (temperature de croissance, rapport des flux v/iii, vitesse de croissance) a permis: 1) une augmentation de la longueur de diffusion des porteurs minoritaires dans la base associee a une amelioration de la qualite de la couche et 2) une impo

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8

Benarfa, Houria. "Proprietes de photoluminescence de gaas : contribution a l'etude de gaas heteroepitaxie sur (ca,sr)f2 par la technique des jets moleculaires." Toulouse, INSA, 1986. http://www.theses.fr/1986ISAT0019.

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ANALYSE DE LA PHOTOLUMINESCENCE DE STRUCTURES GaAs/(Ca,Sr))F2/GaAs, A FLUORURE ACCORDE EN MAILLE AU GAAS; INFLUENCE DES PARAMETRES DE CROISSANCE ET DE LA DISTANCE A L'INTERFACE. COMPARAISON DES PERFORMANCES DE SEMICONDUCTEUR HETEROEPITAXIE A CELLES DE GAAS EPITAXIE; ETUDE DE COUCHES DE GAAS EPITAXIE SUR CAF2 MASSIF

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9

Pant, Bharat Raj. "A Comparative Study on P-type Nickel Oxide and N-type Zinc Oxide for Gas Sensor Applications." University of Toledo / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1525473245395728.

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10

Madhavi, S. "Carrier Mobility And High Field Transport in Modulation Doped p-Type Ge/Si1-xGex And n-Type Si/Si1-xGex Heterostructures." Thesis, Indian Institute of Science, 2000. http://hdl.handle.net/2005/294.

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Modulation doped heterostructures have revolutionized the operation of field effect devices by increasing the speed of operation. One of the factors that affects the speed of operation of these devices is the mobility of the carriers, which is intrinsic to the material used. Mobility of electrons in silicon based devices has improved drastically over the years, reaching as high as 50.000cm2/Vs at 4.2K and 2600cm2/Vs at room temperature. However, the mobility of holes in p-type silicon devices still remains comparatively lesser than the electron mobility because of large effective masses and co

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11

Maake, Popoti Jacqueline. "Photovoltaic and gas sensing applications of transitional metal nanocomposites of poly(3-hexylthiophene)-titanium dioxide." University of Western Cape, 2021. http://hdl.handle.net/11394/8240.

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>Magister Scientiae - MSc<br>This thesis starts with the reviewing of studies on the loading of noble metals and nanostructured metal oxides into bulk heterojunction organic solar cell device architectures. The reviews focused on the innovative developments in the use of various fullerene derivatives as electron acceptors in organic solar cells. It additionally reflected on the effect of metallic nanoparticles (NPs), such as gold (Au) and silver (Ag), on the performance of organic solar cells. Besides the metallic NPs, the effect of metal oxide nanoparticle loading, e.g. CuO, ZnO and TiO2, on

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12

El, Younsi Imane. "Elaboration et caractérisation de nouvelles couches sensibles pour la réalisation de capteurs de CO2." Thesis, Toulouse 3, 2015. http://www.theses.fr/2015TOU30344/document.

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La mesure du taux de CO2 est un besoin relativement récent. Les travaux sur l'utilisation de nouveaux matériaux pour la réalisation de capteurs de gaz, efficaces et peu chers, suscitent des intérêts scientifique et technologique croissants. L'objectif de ces travaux de thèse est l'élaboration et la caractérisation de nouvelles couches sensibles obtenues par pulvérisation cathodique radiofréquence pour la réalisation de capteurs de CO2. Les films minces ont été déposés à partir d'une cible céramique de CuO, dans diverses conditions de dépôt, en variant la pression d'argon dans l'enceinte et la

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13

Theys, Bertrand. "Photoelectrochimie du seleniure d'indium." Paris 7, 1987. http://www.theses.fr/1987PA077165.

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14

Arnoult, Alexandre. "Dopage par modulation d'hétérostructures de semiconducteurs II-VI semimagnétiques en épitaxie par jets moléculaires." Université Joseph Fourier (Grenoble), 1998. http://www.theses.fr/1998GRE10237.

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Une etude theorique preliminaire a cette these a prevu que lorsque l'on introduit un gaz de trous bidimensionnel (2d) dans un puits quantique de semiconducteur semimagnetique, l'interaction entre les spins localises et les porteurs de charges induit une transition de phase ferromagnetique. Nous avons mis au point l'elaboration d'un tel systeme a base de tellurures en epitaxie par jets moleculaires, ainsi que la caracterisation au niveau microscopique des interfaces, du dopage et du transfert de porteurs dans le puits quantique. Ceci nous a permis d'elaborer des echantillons ayant donne lieu a

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15

Wu, Chen-Ju, and 吳珍汝. "Growth of p-type ZnO on GaAs Sbstrate Using Rapid Thermal Annealing." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/m8xkzw.

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碩士<br>國立虎尾科技大學<br>光電與材料科技研究所<br>99<br>Zinc oxide (ZnO) is one of II-VI compound semiconductor with a wide band gap of 3.37 eV at room temperature and a large excition binding energy of 60meV, which makes it be an attractive material recently, especially in the application of blue and ultraviolet light-emitting diodes and laser. In this thesis, the ZnO film growth on gallium arsine (GaAs) substrate was prepared by double plasma-enhanced metal-organic chemical vapor deposition system (DPEMOCVD). Then, the as-grown ZnO film was treated with rapid thermal process by rapid thermal annealing. Wi

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16

Lee, Xin-Zhang, and 李信璋. "Investigation of Characterization of Carbon-Doped p-Type GaAs Grown by MOCVD using CBr4." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/27344421864272141898.

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碩士<br>義守大學<br>電子工程學系碩士班<br>94<br>Carbon doping in GaAs epilayers grown by metalorganic chemical vapor deposition (MOCVD) using CBr4 was successfully obtained . The growth rate decreased as CBr4 increased due to the etching effect of HBr caused by Br radicals. The growth rate increased while V/III ratio and TMGa flow rate increased. In addition, the growth rate increased with increasing the growth pressure and eventually saturated above 100 mbar. In the growth temperature rage of 500 to 650 °C, the growth rate decreased with increasing growth temperature. Carbon incorporation efficiency depe

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17

Lin, Chih-Yuan, and 林致遠. "Study of multi-layer copper-contained ohmic contact structure on p-type GaAs and its application." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/13214098156689836064.

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碩士<br>中原大學<br>電子工程研究所<br>95<br>In this dissertation, we discussed the effects of the thickness of the Cu on the Ni/Pt/Cu/Au contact and of the individual Ni, Pt and Cu on the Ni/Pt/Cu/Ni/Au contact to p-GaAs in the beginning. Then, we sought for the optimum thickness of the Ni, Pt and Cu layers and the suitable annealing temperature and time for the lowest specific contact resistance ρc by transmission line method (TLM). As increasing the thickness of the Ni, Pt and Cu layers to 50nm, 50nm and 160nm, respectively, the lowest value (ρc �� 2.22×10-6 Ω-cm2) of specific contact resistance could be

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18

Wang, Jui-Wei, and 王瑞葦. "Study of Multi-layer Silver-contained Ohmic Contact Structure on P-type GaAs and Its Application to Solar Cell." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/81774804041746253566.

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碩士<br>中原大學<br>電子工程研究所<br>96<br>In this dissertation, we discussed the effects of the thickness of the Ni and Pt on the Ni/Pt/Ag/Au ohmic contact metallurgical structure on p-GaAs in the beginning. We sought for the optimum thickness of the Ni and Pt layers and the suitable annealing temperature and time for the lowest specific contact resistance ρc by transmission line model method (TLM).We found out that the optimum metallurgical structure is Ni(25nm)/Pt(50nm)/Ag(300nm)/Au(20nm) which annealed at 300℃ for one minute. The lowest value (ρc=1.76×10-6 Ω-cm2) of specific contact resistance could b

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19

Yang, Chih-Chao, and 楊智超. "Study of Pd/Au Ohmic Contact on P-Type Ge and Its Application to GaAs/Ge Dual-Junction Solar Cells." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/30881542969581694603.

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碩士<br>中原大學<br>電子工程研究所<br>99<br>Abstract In this dissertation, we discussed the effects of thickness Pd on the Pd / Au and Pd / Ag / Au ohmic contact metallurgical structure deposited on P-Ge material. At first ,we studied the optimum thickness of the Pd layer and the suitable annealing temperature and time for obtaining the lowest specific contact resistance ρc on P-Ge by transmission line model method (TLM).We found out that the optimum metallurgical structure is Pd (30 nm) / Au (60 nm) after annealed at 350 ℃ for 2 minutes. The lowest value ρc=6×10-6 Ω-cm2 of specific contact resistance

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20

LIN, CHING-FEN, and 林靜芬. "Characteristics of High Quality p-type ZnO Thin Films on GaAs Substrates and Cd1-xMnxTe Thin Films on Silicon Substrates." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/tjmq2t.

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碩士<br>國立臺南大學<br>材料科學系碩士班<br>106<br>This study is divided into two parts. The first part is the study of the effect of furnace annealing and rapid thermal annealing (RTA) temperature on the structure and optical properties of arsenic-doped zinc oxide (ZnO:As) film on GaAs substrates. The results show that the samples with both furnace annealing and rapid thermal annealing have better film quality including reduction of the residual stress of the film and the formation of high p-type conductivity. Although the hole concentration of the sample with RTA 600 oC is as high as 1019 cm-3, the defects

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21

Ravichandran, Ram. "Fabrication and characterization of p-type CuO / n-type ZnO heterostructure gas sensors prepared by sol-gel processing techniques." Thesis, 2009. http://hdl.handle.net/1957/13528.

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Increased interest in the field of sensor technology stems from the availability of an inexpensive and robust sensor to detect and quantify the presence of a specific gas. Bulk p-CuO/n-ZnO heterocontact based gas sensors have been shown to exhibit the necessary sensitivity and selectivity characteristics, however, low interfacial CuO/ZnO contact area and poor CuO/ZnO connectivity limits their effective use as gas sensors. The phase equilibria between CuO and ZnO exhibits limited solubility. By exploiting this concept, a CuO/ZnO mixed solution is formed by combining CuO and ZnO precursors using

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