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Relevant bibliographies by topics / PECVD

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Academic literature on the topic 'PECVD'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 July 2025

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Journal articles on the topic "PECVD"

1

Song, Yumin, Jun-Kyo Jeong, Seung-Dong Yang, Deok-Min Park, Yun-mi Kang, and Ga-Won Lee. "Process effect analysis on nitride trap distribution in silicon-oxide-nitride-oxide-silicon flash memory based on charge retention model." Materials Express 11, no. 9 (2021): 1615–18. http://dx.doi.org/10.1166/mex.2021.2067.

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This paper analyzes data retention characteristics to determine process effects on the trap energy distribution of silicon nitride in silicon-oxide-nitride-oxide-silicon (SONOS) flash memory devices. Nitride films were prepared by low-pressure chemical vapor deposition (LPCVD) and plasma-enhanced chemical vapor deposition (PECVD). PEVCD films embedded with silicon nanocrystals (Si-NCs) were also compared. The flat band voltage shift in the programmed device was measured at high temperatures to observe the thermal excitation of electrons from the nitride traps in retention mode. The trap energy

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2

Ding, Er Xiong, Hong Zhang Geng, Li He Mao, et al. "Recent Research Progress of Carbon Nanotube Arrays Prepared by Plasma Enhanced Chemical Vapor Deposition Method." Materials Science Forum 852 (April 2016): 308–14. http://dx.doi.org/10.4028/www.scientific.net/msf.852.308.

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Preparing carbon nanotube (CNT) arrays by plasma enhanced chemical vapor deposition (PECVD) method can dramatically reduce the deposition temperature, which makes it possible for in-situ fabrication of CNT-based nanoelectronic devices. In this paper, up to date research progress of CNT arrays prepared by PECVD method was presented, including radio frequency PECVD, direct current PECVD and microwave PECVD. Then, morphology and quality of CNT arrays were compared. In the end, we analyzed the possible challenges encountered through CNT array preparation by PECVD method at the moment and in the fu

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3

Noriah, Yusoff, Nor Hayati Saad, Mohsen Nabipoor, Suraya Sulaiman, and Daniel Bien Chia Sheng. "Plasma Enhanced Chemical Vapor Deposition Time Effect on Multi-Wall Carbon Nanotube Growth Using C₂H₂ and H₂ as Precursors." Advanced Materials Research 938 (June 2014): 58–62. http://dx.doi.org/10.4028/www.scientific.net/amr.938.58.

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Multi-wall carbon nanotube (MWCNT) structures were grown on cobalt catalyst layer through Plasma Enhanced Chemical Vapor Deposition (PECVD) process. Acetylene (C2H2) and hydrogen (H2) are used as precursors during the PECVD process. The morphology structures of the MWCNTs grown under different PECVD time were investigated and characterized using Scanning Electron Microscope (SEM). The effect of the PECVD time on the MWCNT growth is studied by varying the PECVD time at 45 sec and 600 sec. The morphology structures suggest that the growth rate is proportional to the PECVD time under the similar

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4

KIM, JIN-EUI, SANG-HYUK RYU, and SIE-YOUNG CHOI. "THE EFFECT OF a-SiN:H AND a-Si:H SURFACE ROUGHNESS OF TFT BY PE/RACVD." International Journal of Modern Physics B 24, no. 15n16 (2010): 3107–11. http://dx.doi.org/10.1142/s0217979210066161.

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This paper describes the influence of surface roughness on the mobility of a - SiN : H and a - Si : H . For the a - SiN : H deposited by PECVD, the roughness was 0.832 nm. The a - SiN : H layer composed of (PECVD 150 nm + RACVD 100 nm) had better characteristic of roughness than the a - SiN : H layer (PECVD 250 nm) by 47%. The roughness of the a - Si : H (PECVD 200 nm) deposited on the a - SiN : H layer was 0.803 nm. And the roughness of a - Si : H (RACVD 100 nm + PECVD 100 nm) deposited the a - SiN : H layer is better than the a - Si : H (PECVD 200 nm) by 27%. After depositing the layer of a

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5

Chen, Tsung-Cheng, Ting-Wei Kuo, Yu-Ling Lin, Chen-Hao Ku, Zu-Po Yang, and Ing-Song Yu. "Enhancement for Potential-Induced Degradation Resistance of Crystalline Silicon Solar Cells via Anti-Reflection Coating by Industrial PECVD Methods." Coatings 8, no. 12 (2018): 418. http://dx.doi.org/10.3390/coatings8120418.

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The issue of potential-induced degradation (PID) has gained more concerns due to causing the catastrophic failures in photovoltaic (PV) modules. One of the approaches to diminish PID is to modify the anti-reflection coating (ARC) layer upon the front surface of crystalline silicon solar cells. Here, we focus on the modification of ARC films to realize PID-free step-by-step through three delicate experiments. Firstly, the ARC films deposited by direct plasma enhanced chemical vapor deposition (PECVD) and by indirect PECVD were investigated. The results showed that the efficiency degradation of

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6

Nuayi, A. W., R. Ruslan, F. A. Noor, T. Winata, and Irzaman. "Optical Characterization of Intrinsic Silicon Thin Films Growth via Hot Wire in Plasma-Very High-Frequency PECVD." Journal of Physics: Conference Series 2980, no. 1 (2025): 012020. https://doi.org/10.1088/1742-6596/2980/1/012020.

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Abstract This study investigated the growth of a thin intrinsic silicon layer on a 1.5 x 2 cm glass substrate. The growth utilized a Hot Wire in Plasma-Very High-Frequency Plasma Enhanced Chemical Vapor Deposition (HW IP-VHF PECVD) system at varied substrate temperatures (200, 225, 250, and 275 °C). The VHF PECVD method served as a comparative benchmark. Silane gas (SiH4) was introduced at 70 sccm to enhance growth. This research seeks to preliminarily optimize the optical properties of type-i polycrystalline silicon thin films for future application in p-i-n silicon-based graphene solar cells

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7

Al Alam, Elias, Ignasi Cortés, T. Begou, et al. "Comparison of Electrical Behavior of GaN-Based MOS Structures Obtained by Different PECVD Process." Materials Science Forum 711 (January 2012): 228–32. http://dx.doi.org/10.4028/www.scientific.net/msf.711.228.

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MOS SiO2/GaN structures were fabricated with different surface preparation and different PECVD processes for the dielectric thin film deposition (ECR-PECVD and ICP-PECVD in continuous and pulsed modes). On the basis of C-V curves, the surface preparation steps, involving chemical etching with BOE, UV-Ozone oxidation and oxygen plasma oxidation, were compared in terms of resulting effective charge and interface trap density. A good SiO2/GaN interface quality was achieved for N-type MOS capacitances obtained both with continuousICPPECVD and ECR-PECVD deposition of the SiO2 dielectric. However, t

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8

Echeverría, Elena, George Peterson, Bin Dong, et al. "Band Bending at the Gold (Au)/Boron Carbide-Based Semiconductor Interface." Zeitschrift für Physikalische Chemie 232, no. 5-6 (2018): 893–905. http://dx.doi.org/10.1515/zpch-2017-1038.

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Abstract We have used X-ray photoemission spectroscopy to study the interaction of gold (Au) with novel boron carbide-based semiconductors grown by plasma-enhanced chemical vapor deposition (PECVD). Both n- and p-type films have been investigated and the PECVD boron carbides are compared to those containing aromatic compounds. In the case of the p-type semiconducting PECVD hydrogenated boron carbide samples, the binding energy of the B(1s) core level shows a shift to higher binding energies as the Au is deposited, an indication of band bending and possibly Schottky barrier formation. In the ca

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9

Parkhomenko, I. N., I. A. Romanov, M. A. Makhavikou, et al. "Effect of thermal and pulse laser annealing on photoluminescence of CVD silicon nitride films." Proceedings of the National Academy of Sciences of Belarus. Physics and Mathematics Series 55, no. 2 (2019): 225–31. http://dx.doi.org/10.29235/1561-2430-2019-55-2-225-231.

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The light-emitting properties of Si-rich silicon nitride films deposited on the Si (100) substrate by plasma-enhanced (PECVD) and low-pressure chemical vapor deposition (LPCVD) have been investigated. In spite of the similar stoichiometry (SiN1.1), nitride films fabricated by different techniques emit in different spectral ranges. Photoluminescence (PL) maxima lay in red (640 nm) and blue (470 nm) spectral range for the PECVD and LPCVD SiN1.1 films, respectively. It has been shown that equilibrium furnace annealing and laser annealing by ruby laser (694 nm, 70 ns) affect PL spectra of PECVD an

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Yuan, Jin She, Ming Yue Wang, and Guo Hao Yu. "Low-Temperature Plasma Deposition of Diamond-Like Carbon and III Nitride Thin-Films for Photovoltaic Devices." Materials Science Forum 610-613 (January 2009): 353–56. http://dx.doi.org/10.4028/www.scientific.net/msf.610-613.353.

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Low-temperature plasma deposition of diamond-like carbon (DLC) and gallium nitride thin-films grown on Si substrate by PECVD was investigated using atomic force microscopy and reflectance spectra for photovoltaic devices application. It was found that the morphological features of the GaN film depend on the substrates under the optimum deposition conditions. The optical band gap of the films was approximately 5.5eV for PECVD DLC and approximately 3.3 eV for PECVD GaN.

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Dissertations / Theses on the topic "PECVD"

1

Bohlen, Brandon Scott. "PECVD grown DBR for microcavity OLED sensor." [Ames, Iowa : Iowa State University], 2007.

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2

Sanchez, Mathon Gustavo. "Piezoelectric aluminum nitride thin films by PECVD." Limoges, 2009. https://aurore.unilim.fr/theses/nxfile/default/9224e391-3c48-4c10-9166-c2a2bed3c5f4/blobholder:0/2009LIMO4007.pdf.

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Des couches minces polycristallines d'AIN ont été réalisées en utilisant une technique CVD assistée par plasma micro-onde. Les paramètres, distance plasma - injecteur, température du substrat, polarisation RF du porte - substrat ont été optimisés. Il a été possible de contrôler l’orientation préférentielle <0001> ou <1010>, intéressantes pour des applications piézoélectriques. Les mécanismes de croissance qui ont conduit au développement des microstructures dans les différentes conditions ont été expliqués. La comparaison avec une technique PVD a permis d’enricher la discussion. Le

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Mäder, Gerrit. "Atmosphärendruck-Plasma-Beschichtungsreaktoren." Stuttgart Fraunhofer-IRB-Verl, 2008. http://d-nb.info/991762533/04.

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Ceiler, Martin Francis Jr. "The composition and properties of PECVD silicon dioxide." Thesis, Georgia Institute of Technology, 1993. http://hdl.handle.net/1853/11864.

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Dominguez, Bucio Thalia. "NH3-free PECVD silicon nitride for photonic applications." Thesis, University of Southampton, 2018. https://eprints.soton.ac.uk/422874/.

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Silicon Photonics has open the possibility of developing multilayer platforms based on complementary metal-oxide semiconductors compatible materials that have the potential to provide the density of integration required to fabricate complex photonic circuits. Amongst these materials, silicon nitride (SiN) has drawn attention due to its fabrication flexibility and advantageous intrinsic properties that can be tailored to fulfil the requirements of different linear and non-linear photonic applications covering the ultra-violet to mid-infrared wavelengths. Yet, the fabrication techniques typicall

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Rangel, Elidiane Cipriano. "Implantação iônica em filmes finos depositados por PECVD." [s.n.], 1999. http://repositorio.unicamp.br/jspui/handle/REPOSIP/278415.

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Orientador: Mario Antonio Bica de Moraes<br>Tese (doutorado) - Universidade Estadual de Campinas, Instituto de Fisica Gleb Wataghin<br>Made available in DSpace on 2018-07-26T03:43:23Z (GMT). No. of bitstreams: 1 Rangel_ElidianeCipriano_D.pdf: 787803 bytes, checksum: 0b3afb1a1012d775c5984bbf14f79319 (MD5) Previous issue date: 1999<br>Resumo: Neste trabalho, investigou-se a influência da implantação iônica sobre as propriedades de filmes finos de polímero depositados a partir de plasmas de radiofrequência (40 MHz, 70 W) de dois compostos orgânicos (acetileno e benzeno) e de suas misturas com g

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Wu, Lingling. "Surface processing by RFI PECVD and RFI PSII." W&M ScholarWorks, 2000. https://scholarworks.wm.edu/etd/1539623997.

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An RFI plasma enhanced chemical vapor deposition (PECVD) system and a large-scale RF plasma source immersion ion implantation (PSII) system were designed and built to study two forms of 3-D surface processing, PECVD and PSII. Using the RFI PECVD system, Ti-6Al-4V substrates were coated with diamond-like carbon films with excellent tribological and optical properties. as an innovation, variable angle spectroscopic ellipsometry (VASE) was successfully applied for non-destructive, 3-D, large-area tribological coatings quality investigation.;Based on the experience with the RFI PECVD system, a lar

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CHAKRAVARTY, SRINIVAS L. N. "DEVELOPMENT OF SCRATCH RESISTANT PECVD SILICA-LIKE FILMS." University of Cincinnati / OhioLINK, 2000. http://rave.ohiolink.edu/etdc/view?acc_num=ucin973542599.

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9

Zhu, Mingyao. "Carbon nanosheets and carbon nanotubes by RF PECVD." W&M ScholarWorks, 2006. https://scholarworks.wm.edu/etd/1539623509.

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A planar antenna RF plasma enhanced chemical vapor deposition apparatus was built for carbon nanostructure syntheses. When operated in inductive and capacitive plasma discharging modes, two carbon nanostructures, carbon nanotube (CNT) and carbon nanosheet (CNS), were synthesized, respectively.;A nanosphere lithography method was developed and used to prepare catalyst patterns for CNT growth. Using capacitively coupled C2H2/NH 3 plasma, randomly oriented CNT were synthesized on Ni dot patterned Si substrates. Aligned CNT arrays were grown on SiO2 coated Si substrates, using both C2H2/NH3 and CH

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Hartel, Andreas Markus [Verfasser], and Margit [Akademischer Betreuer] Zacharias. "Structural and optical properties of PECVD grown silicon nanocrystals embedded in SiOxNy matrix = Strukturelle und Optische Eigenschaften mittels PECVD hergestellter Silicium Nanokristalle." Freiburg : Universität, 2013. http://d-nb.info/1114995673/34.

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Books on the topic "PECVD"

1

Geiser, Juergen. Simulation of deposition processes with PECVD apparatus. Nova Science Publishers, 2011.

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Ekinci, Yasin. Fabrication and characterisation of PECVD nanocrystalline silicon thin films. De Montfort University, 2000.

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3

Tübingen, Universität, ed. Plasmaunterstützte Gasphasenabscheidung: Aufbau einer PECVD-Anlage und Abscheidung von oxidischen Schichten. [s.n.], 1997.

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4

M, Pantic Dragan, Electrochemical Society, United States. National Aeronautics and Space Administration., and Symposium on Dielectric Films on Compound Semiconductors., eds. Electron beam induced damage in PECVD Si₃N₄ and SiO₂ films on InP. NASA, 1990.

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5

Lamberton, R. W. A study of the microstructure and growth of ultra-thin film amorphous hydrogenated carbon (a-C:H) prepared by plasma enhanced chemical vapour deposition (PECVD). The Author], 1998.

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6

Spósito, Ernesto, Gabriela Moirano, and Viviana Barneche. PECV. IMM, Intendencia Municipal de Montevideo, 2004.

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7

Great Britain. Department of the Environment. Wastes Technical Division., Warren Spring Laboratory, and Aspinwall and Company, eds. Development of the national household waste analysis programme: Summary report : prepared on behalf of the Department of the Environment under Research Contract PECD 7/10/288. Department of the Environment, Wastes Technical Division, 1993.

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8

Die Kombination von Plasmanitrierung und plasmagestützter Schichtabscheidung aus der Gasphase (PACVD) in einem Verfahrensablauf. Springer Berlin Heidelberg, 1998.

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9

Chen, Junhong, Zheng Bo, and Ganhua Lu. Vertically-Oriented Graphene: PECVD Synthesis and Applications. Springer London, Limited, 2015.

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10

Chen, Junhong, Zheng Bo, and Ganhua Lu. Vertically-Oriented Graphene: PECVD Synthesis and Applications. Springer, 2015.

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Book chapters on the topic "PECVD"

1

Won, Tae Kyung, Soo Young Choi, and John M. White. "Thin-Film PECVD (AKT)." In Flat Panel Display Manufacturing. John Wiley & Sons Ltd, 2018. http://dx.doi.org/10.1002/9781119161387.ch12_01.

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2

Kikuchi, Masashi. "Thin-Film PECVD (Ulvac)." In Flat Panel Display Manufacturing. John Wiley & Sons Ltd, 2018. http://dx.doi.org/10.1002/9781119161387.ch12_02.

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3

Kozak, A. O., V. I. Ivashchenko, O. K. Porada, et al. "Multilayer PECVD Si–C–N Films." In Springer Proceedings in Physics. Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-1742-6_39.

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Winter, Patrick M., Gregory M. Lanza, Samuel A. Wickline, et al. "Plasma-Enhanced Chemical Vapor Deposition (PECVD)." In Encyclopedia of Nanotechnology. Springer Netherlands, 2012. http://dx.doi.org/10.1007/978-90-481-9751-4_100662.

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5

Flamm, Daniel L. "Plasma Chemistry, Basic Processes, and PECVD." In Plasma Processing of Semiconductors. Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-011-5884-8_2.

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6

Droes, Stevenx R., Toivo T. Kodas, and Mark J. Hampden-Smith. "Plasma-Enhanced Chemical Vapor Deposition (PECVD)." In Carbide, Nitride and Boride Materials Synthesis and Processing. Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-009-0071-4_23.

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7

Rashmi Rao, B., Navakanta Bhat, and S. K. Sikdar. "Thick PECVD Germanium Films for MEMS Application." In Physics of Semiconductor Devices. Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_117.

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8

Chen, Junhong, Zheng Bo, and Ganhua Lu. "Atmospheric PECVD Growth of Vertically-Oriented Graphene." In Vertically-Oriented Graphene. Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-15302-5_5.

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9

Bezzaoui, H., A. Baus, and E. Voges. "Integrated Optics on Silicon with PECVD-Fabricated Waveguides." In Micro System Technologies 90. Springer Berlin Heidelberg, 1990. http://dx.doi.org/10.1007/978-3-642-45678-7_40.

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Wagner, John R., and Merle N. Hirsh. "An Experimental PECVD Investigation — From an Industrial Viewpoint." In Plasma Processing of Polymers. Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-015-8961-1_30.

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Conference papers on the topic "PECVD"

1

Dmitriev, N. Yu, A. M. Mumlyakov, M. V. Shibalov, et al. "PECVD-fabricated microresonators for nonlinear photonics." In 2024 International Conference Laser Optics (ICLO). IEEE, 2024. http://dx.doi.org/10.1109/iclo59702.2024.10624213.

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2

Pandraud, G., A. Barbosa Neira, P. M. Sarro, and E. Margallo-Balba. "PECVD SiC-SiO." In 2010 Ninth IEEE Sensors Conference (SENSORS 2010). IEEE, 2010. http://dx.doi.org/10.1109/icsens.2010.5690912.

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3

Bazylenko, M. V., and D. Moss. "Two Types of Photosensitivity Observed in Hollow Cathode PECVD Germanosilica Planar Waveguides." In Bragg Gratings, Photosensitivity, and Poling in Glass Fibers and Waveguides. Optica Publishing Group, 1997. http://dx.doi.org/10.1364/bgppf.1997.jmf.7.

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Plasma enhanced chemical vapour deposition (PECVD) is a promising technique for growing intrinsically UV-photosensitive germanosilica waveguides. Conventional PECVD techniques have been used to fabricate low-loss waveguide devices since the late 1980's [1], but it is only recently that work has started on the development of UV-photosensitive PECVD glasses for direct writing, bragg gratings and UV-tuning applications [2]. Although high intrinsic photosensitivity in conventional PECVD germanosilica has been reported [3], its practical use has been limited by the high loss of this material due to

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4

Noree, Sabah, Ferhat Bozduman, I. Umran Koc, et al. "Graphene synthesis by PECVD." In 2015 IEEE International Conference on Plasma Sciences (ICOPS). IEEE, 2015. http://dx.doi.org/10.1109/plasma.2015.7179692.

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Ibbotson, D. E., J. J. Hsieh, D. L. Flamm, and J. A. Mucha. "Oxide Deposition By PECVD." In OPTCON '88 Conferences--Applications of Optical Engineering, edited by James E. Griffiths. SPIE, 1989. http://dx.doi.org/10.1117/12.951024.

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Wang, Yu, Hui Guo, Haixia Zhang, Guobing Zhang, and Zhihong Li. "Fabrication and Test of PECVD SiC Resonator." In 2007 First International Conference on Integration and Commercialization of Micro and Nanosystems. ASMEDC, 2007. http://dx.doi.org/10.1115/mnc2007-21240.

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This paper utilized SiC thin film deposited by low temperature PECVD to fabricate resonator at 300°C, following by annealing and doping to release its stress and improve its electronics contact. The test results show that, the frequency of PECVD SiC resonator is among 60–150KHz. The Q value of resonator was estimated according to the tested frequency-amplitude curve, is about 10±3. The ability of SiC resonators in erosion environment was also studied, under 5mins etching in KOH solution, the whole structure are kept very well. Therefore, this kind PECVD SiC resonator not only can be used widel

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7

Haure, T., A. Denoirjean, P. Tristant, et al. "Alumina Duplex Coating by Multiprocesses: Air Plasma Spraying and Plasma Enhanced Chemical Vapor Deposition." In ITSC2001, edited by Christopher C. Berndt, Khiam A. Khor, and Erich F. Lugscheider. ASM International, 2001. http://dx.doi.org/10.31399/asm.cp.itsc2001p0613.

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Abstract Thick alumina coatings produced by Air Plasma Spraying have an interconnected porosity, thus the use of these coatings in oxidizing or corrosive environment is not suitable. In this paper, a study is developed in order to limit this problem on metallic substrates. It consists in using two successive techniques: APS and PECVD. Two parameters have been shown to be important: the roughness and the preheating temperature. Two types of duplex (PECVD coating as top coat or as bond coat) have been achieved on two substrates (TA6V and stainless steel 316L). The optimization of each process ha

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8

Pandraud, G., Y. Huang, P. M. Sarro, and F. Bernal Arango. "PECVD SiC photonic crystal sensor." In 2011 IEEE Sensors. IEEE, 2011. http://dx.doi.org/10.1109/icsens.2011.6127130.

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Agah, M., and K. D. Wise. "PECVD-oxynitride gas chromatographic columns." In International Electron Devices Meeting 2005. IEEE, 2005. http://dx.doi.org/10.1109/iedm.2005.1609334.

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Cao, Zhiqiang, Tong-Yi Zhang, and Xin Zhang. "A Nanoindentation-Based Microbridge Testing Method for Mechanical Characterization of Thin Films for MEMS Applications." In ASME 2005 International Mechanical Engineering Congress and Exposition. ASMEDC, 2005. http://dx.doi.org/10.1115/imece2005-80288.

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Plasma-enhanced chemical vapor deposited (PECVD) silane-based oxides (SiOx) have been widely used in both microelectronics and MEMS (MicroElectroMechanical Systems) to form electrical and/or mechanical components. In this paper, a novel nanoindentation-based microbridge testing method is developed to measure both the residual stresses and Young’s modulus of PECVD SiOx films on silicon wafers. Theoretically, we considered both the substrate deformation and residual stress in the thin film and derived a closed formula of deflection versus load. The formula fitted the experimental curves almost p

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Reports on the topic "PECVD"

1

Washington, Derwin. Reactive Ion Etching of PECVD Silicon Dioxide (SiO2) Layer for MEMS Application. Defense Technical Information Center, 2004. http://dx.doi.org/10.21236/ada425806.

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Alizadeh, Philipp, Kevin Oberle, and Rainer Dahlmann. Process transfer of PECVD gas barrier coatings between PE-HD and PP hollow bodies. Universidad de los Andes, 2024. https://doi.org/10.51573/andes.pps39.gs.nn.2.

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This study investigates the plasma enhanced chemical vapor deposition (PECVD) coating process transfer between PE and PP substrates. An inverse relationship is observed between the barrier improvement factor (BIF) and applied energy density (E), with PE showing a stronger response. The same process gas ratio optimizes both materials, suggesting geometry influences the barrier effect more than material. However, the barrier on PP is limited, indicating poorer compatibility to functionalization. The development of the intermediate layer did not improve the barrier performance. FESEM analyses and

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3

Liu, Yong. High Growth Rate Deposition of Hydrogenated Amorphous Silicon-Germanium Films and Devices Using ECR-PECVD. Office of Scientific and Technical Information (OSTI), 2002. http://dx.doi.org/10.2172/803355.

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Zhang, Xin. Residual Stress and Fracture of PECVD Thick Oxide Films for Power MEMS Structures and Devices. Defense Technical Information Center, 2007. http://dx.doi.org/10.21236/ada470256.

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Deng, Xunming, and Qi Hua Fan. High-Rate Fabrication of a-Si-Based Thin-Film Solar Cells Using Large-Area VHF PECVD Processes. Office of Scientific and Technical Information (OSTI), 2011. http://dx.doi.org/10.2172/1132817.

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Tong, W., T. E. Felter, L. S. Pan, S. Anders, A. Cossy-Facre, and T. Stammler. The effect of aspect ratio and sp2/sp3 content on the field emission properties of carbon films grown by Ns-spiked PECVD. Office of Scientific and Technical Information (OSTI), 1998. http://dx.doi.org/10.2172/666026.

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Lucovsky, G., R. J. Nemanich, J. Bernholc, et al. Fundamental Studies of Defect Generation in Amorphous Silicon Alloys Grown by Remote Plasma-Enhanced Chemical Vapor Deposition (Remote PECVD), Annual Subcontract Report, 1 September 1990 - 31 August 1991. Office of Scientific and Technical Information (OSTI), 1993. http://dx.doi.org/10.2172/6796766.

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Lucovsky, G., R. J. Nemanich, J. Bernholc, et al. Fundamental studies of defect generation in amorphous silicon alloys grown by remote plasma-enhanced chemical-vapor deposition (Remote PECVD). Annual subcontract report, 1 September 1990--31 August 1991. Office of Scientific and Technical Information (OSTI), 1993. http://dx.doi.org/10.2172/10129188.

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Cetin, Ali, and Rainer Dahlmann. Recyclates for sustainable food contact method development for the validation of migration barriers. Universidad de los Andes, 2024. https://doi.org/10.51573/andes.pps39.ss.cep.3.

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Abstract:

Ideological changes in industrial approaches require greater ecological thinking. Regarding plastics, the integration of plastic waste into the circular economy arises from the urgent need to design and develop sustainable alternatives. The primary objective of a recycling process is to ensure that the quality of recycled plastics consistently matches that of the original product. Regional authorities and regulations require the assessment and prevention of the potential safety hazards of possible contaminants in recycling streams, recycling processes, and recycling technologies. The specific

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