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Dissertations / Theses on the topic 'Polycrystalline film'

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Published: 28 May 2022
Last updated: 31 July 2025

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1

Meakin, Douglas Boyd. "Active devices in polycrystalline silicon." Thesis, University of Liverpool, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.240344.

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2

Inns, Daniel Photovoltaics &amp Renewable Energy Engineering Faculty of Engineering UNSW. "ALICIA polycrystalline silicon thin-film solar cells." Publisher:University of New South Wales. Photovoltaics & Renewable Energy Engineering, 2007. http://handle.unsw.edu.au/1959.4/43600.

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Thin-film silicon photovoltaics are seen as a good possibility for reducing the cost of solar electricity. The focus of this thesis is the ALICIA cell, a thin-film polycrystalline silicon solar cell made on a glass superstrate. The name ALICIA comes from the fabrication steps - ALuminium Induced Crystallisation, Ion Assisted deposition. The concept is to form a high-quality crystalline silicon layer on glass by Aluminium Induced Crystallisation (AIC). This is then the template from which to epitaxially grow the solar cell structure by Ion Assisted Deposition (IAD). IAD allows high-rate si
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3

Attygalle, Muthuthanthrige Lilani C. "Theoretical modeling of polycrystalline thin-film photovoltaics /." Connect to full text in OhioLINK ETD Center, 2008. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1204144362.

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4

Attygalle, Muthuthanthrige Lilani Chandrawansha. "Theoretical modeling of polycrystalline thin-film photovoltaics." University of Toledo / OhioLINK, 2008. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1204144362.

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5

Mackay, Ian. "Thin film electroluminescence /." Online version of thesis, 1989. http://hdl.handle.net/1850/10551.

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6

Coxon, Penelope Anne. "Polycrystalline silicon thin-film transistors for large-scale microelectronics." Thesis, University of Cambridge, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.358595.

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7

Kunz, Oliver Photovoltaics &amp Renewable Energy Engineering Faculty of Engineering UNSW. "Evaporated solid-phase crystallised poly-silicon thin film solar cells on glass." Publisher:University of New South Wales. Photovoltaics & Renewable Energy Engineering, 2009. http://handle.unsw.edu.au/1959.4/43644.

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The cost of photovoltaic electricity needs to be significantly reduced in order to achieve a high electricity market penetration. Thin-film solar cells have good potential to achieve such cost savings though (i) large-area deposition onto low-cost foreign substrates, (ii) more streamlined processing, (iii) monolithic cell interconnection, and very efficient use of the expensive semiconductor material. Polycrystalline silicon (poly-Si) on glass is a promising technology for the cost-effective large volume production of PV modules since it (i) makes use of an abundant raw material, (ii) is non
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8

He, Song Photovoltaics &amp Renewable Energy Engineering Faculty of Engineering UNSW. "Evaporated polycrystalline silicon thin-film solar cells by aluminium-induced crytallization solid-phase epitaxy." Awarded By:University of New South Wales. Photovoltaics & Renewable Energy Engineering, 2009. http://handle.unsw.edu.au/1959.4/44888.

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Polycrystalline silicon (poly-Si) thin-film solar cells are receiving attention by many researchers in recent times. The focus of this thesis is the evaporated ALICE solar cell, a thin-film poly-Si solar cell fabricated on a glass superstrate by e-beam evaporation. The acronymn ALICE comes from - ALuminium Induced Crystallization Solid Phase Epitaxy. The concept is first to form a high-quality crystalline silicon layer on glass by Aluminium Induced Crystallization (AIC). The AIC seed layer (grain size>20 ??m) acts as the template from which the crystalline information is transferred into the s
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9

Golego, Nickolay. "Thin-film polycrystalline titanium-oxygen semiconductors prepared by spray pyrolysis." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk2/ftp02/NQ33300.pdf.

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10

Chow, Thomas. "A conduction model for intrinsic polycrystalline silicon thin film transistor based on discrete grains /." View abstract or full-text, 2009. http://library.ust.hk/cgi/db/thesis.pl?ECED%202009%20CHOW.

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11

Yu, Hang Ph D. Massachusetts Institute of Technology. "Mechanisms for intrinsic stress evolution during and after polycrystalline film growth." Thesis, Massachusetts Institute of Technology, 2013. http://hdl.handle.net/1721.1/81062.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2013.<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references.<br>Growth of polycrystalline films involves poorly understood kinetic processes that occur far from equilibrium and lead to complex co-evolution of the surface, microstructure and intrinsic stress of the films. Here we present a comprehensive study consisting of in situ stress measurements, microstructure characterization, and analytical modeling for various polycrystalline systems. We find that in systems of
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12

Kung, Kenneth Ting-Yuan. "Polycrystalline Si thin films and devices : I. Seed selection through ion channeling II. Thin-film transistors." Thesis, Massachusetts Institute of Technology, 1988. http://hdl.handle.net/1721.1/69699.

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13

Lee, Jinwoo. "Metastability of copper indium gallium diselenide polycrystalline thin film solar cell devices /." Connect to title online (Scholars' Bank) Connect to title online (ProQuest), 2008. http://hdl.handle.net/1794/8588.

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Thesis (Ph. D.)--University of Oregon, 2008.<br>Typescript. Includes vita and abstract. Includes bibliographical references (leaves 112-117). Also available online in Scholars' Bank; and in ProQuest, free to University of Oregon users.
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14

Shi, Lei Photovoltaics &amp Renewable Energy Engineering Faculty of Engineering UNSW. "Contact resistance study on polycrystalline silicon thin-film solar cells on glass." Publisher:University of New South Wales. Photovoltaics & Renewable Energy Engineering, 2008. http://handle.unsw.edu.au/1959.4/41425.

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Thin-film solar cells are widely recognised to have the potential to compete with fossil fuels in the electricity market due to their low cost per peak Watt. The Thin-Film Group at the University of New South Wales (UNSW) is engaged in developing polycrystalline silicon (poly-Si) thin-film solar cells on glass using e-beam evaporation technology. We believe our solar cells have the potential of significantly lowering the manufacturing cost compared to conventional, PECVD-fabricated thin-film solar cells. After years of materials research, the focus of the Group??s work is now moving to the met
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15

Straub, Axel Electrical Engineering &amp Telecommunications Faculty of Engineering UNSW. "Polycrystalline silicon thin-film solar cells on glass by ion-assisted deposition." Awarded by:University of New South Wales. School of Electrical Engineering and Telecommunications, 2005. http://handle.unsw.edu.au/1959.4/22435.

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Polycrystalline silicon (pc-Si, grain size > 1??m, no amorphous tissue) on glass is an interesting material for thin-film solar cells due to the low costs, the abundance and the non-toxic character of Si, and the properties of pc-Si like long-term stability and lateral conductance. Glass as supporting material significantly complicates the fabrication process as it limits the thermal budget and the maximum temperature. In this work, the feasibility of forming large-grained pc-Si thin-film solar cells on glass by ion-assisted deposition (IAD) on aluminium-induced crystallisation (AIC) seed laye
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16

Pohl, John E. T. "The electrical properties of bulk polycrystalline and thin film high temperature superconductors." Thesis, University of Nottingham, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.315041.

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17

Ricciardo, Rebecca Ann. "Chemical, Magnetic, and Orbital Order of Polycrystalline and Thin film Double Perovskites." The Ohio State University, 2009. http://rave.ohiolink.edu/etdc/view?acc_num=osu1250277883.

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18

Lee, Jinwoo 1973. "Metastability of copper indium gallium diselenide polycrystalline thin film solar cell devices." Thesis, University of Oregon, 2008. http://hdl.handle.net/1794/8588.

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xvi, 117 p. ; ill. (some col.) A print copy of this thesis is available through the UO Libraries. Search the library catalog for the location and call number.<br>High efficiency thin film solar cells have the potential for being a world energy solution because of their cost-effectiveness. Looking to the future of solar energy, there is the opportunity and challenge for thin film solar cells. The main theme of this research is to develop a detailed understanding of electronically active defect states and their role in limiting device performance in copper indium gallium diselenide (CIGS) sol
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19

Walsh, Timothy M. Photovoltaics &amp Renewable Energy Engineering Faculty of Engineering UNSW. "Metallisation and interconnection of polycrystalline silicon thin-film solar cells on glass superstrates." Awarded by:University of New South Wales, 2006. http://handle.unsw.edu.au/1959.4/35216.

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Thin-film photovoltaics seem set to become a large part of future photovoltaic production worldwide, due to the fact that thin-film photovoltaic modules have the potential to be manufactured for a significantly lower cost per peak Watt of photovoltaic electricity produced than traditional wafer-based photovoltaic modules. Of particular interest are polycrystalline silicon (poly-Si) thin-film photovoltaic devices on foreign supporting superstrates such as glass, because they combine the best features of wafer-based modules (long-term stability, vast manufacturing experience) with the best featu
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20

Tam, Simon Wing-Bun. "The intra-nodal capacitances of polycrystalline silicon thin film transistors : measurement and modelling." Thesis, University of Cambridge, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.362868.

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21

Lei, Kuan-Shaur. "Breakdown of the passive film on monocrystalline and polycrystalline nickel by chloride ions /." The Ohio State University, 1985. http://rave.ohiolink.edu/etdc/view?acc_num=osu1487263399025293.

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22

Lappalainen, J. (Jyrki). "Laser-ablation deposition and characterization of polycrystalline Nd-modified Pb(Zr,Ti)O3 thin films." Doctoral thesis, University of Oulu, 1999. http://urn.fi/urn:isbn:9514254317.

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Abstract Nd-modified lead-zirconate-titanate (PNZT) thin films were deposited on MgO(100), Si(100) and Al2O3(1102) single-crystal substrates using the pulsed-laser-ablation technique with a XeCl excimer laser. The post-annealing heat-treatment technique was used for the crystallisation of the films. The structural characterization, microstructure and the chemical composition of the thin films and of the ceramic Pb0.97Nd0.02(Zr0.55Ti0.45)O3 targets after ablation were studied using x-ray diffraction, scanning electron microscopy and energy-dispersive x-ray spectroscopy, respectively. The format
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23

Bridge, Chris. "Optical electrical and microstructural characterisation of polycrystalline thin film CdTe/CdS heterojunction solar cells." Thesis, University of Manchester, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.680179.

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24

Kurobe, Kenichi. "Inherent Electrical Properties of Polycrystalline Silicon Solar Cells and Application for Thin Film Structures." 京都大学 (Kyoto University), 2002. http://hdl.handle.net/2433/149427.

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25

Zan, Hsiao Wen, and 冉曉雯. "Unified Characterization of Polycrystalline Silicon Thin-Film Transistors and Novel Structures of Polycrystalline Silicon Thin-Film Transistors." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/57597955664005905124.

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博士<br>國立交通大學<br>電子工程系<br>91<br>In this dissertation, the dimensional effects of polycrystalline silicon thin-film transistors (poly-Si TFTs) are studied. By fabricating and characterizing poly-Si TFTs with various channel geometry, different channel thickness, and different grain size. Short channel effects and narrow width effects are investigated and discussed carefully. A physically-based model describing the impact ionization effect is also established and compared with experiment results. In order to suppress the severe short channel effects of poly-Si TFTs, two kinds of novel structures
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26

Lien, Wen-Hung, and 連文宏. "Study of polycrystalline silicon thin film transistors." Thesis, 1995. http://ndltd.ncl.edu.tw/handle/57694513232941617495.

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碩士<br>國立交通大學<br>應用化學系<br>83<br>The solid pases recrystallization of amorphous silicon ( α-Si ) films deposited by a low-pressure chemical vapor deposition system using disilane (Si2H6) gas at various annealing conditions are investigated. The grain sizes of recrystallized films formed from Si2H6 are larger than that formed from SiH4. The maximum grain size is obtained at the deposition temperature of 475℃, where the nucleation rate is minimum due to the maximum structural disorder of the Si
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27

Cobb, Brian Hardy 1982. "Dynamic response of polycrystalline organic thin film transistors." Thesis, 2010. http://hdl.handle.net/2152/ETD-UT-2010-05-794.

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In this dissertation, charge transport through organic field effect transistors is explored. In particular, small molecule-based devices consisting of Pentacene semiconducting thin films are investigated. The relationship between electric field and carrier velocity is explored over a wide range of electric fields. These velocities are then compared to directly measured velocities measured from transient measurements. New device structures are fabricated in order to provide low voltage operation, along with a method to stabilize the output response and reduce bias stress effects. A novel method
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28

Yen, Cheng-Zheng, and 顏承正. "Study of polycrystalline Silicon thin film transistors fabricated." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/85572243134088780641.

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碩士<br>國立交通大學<br>電子工程系<br>88<br>The ultra high vacuum chemical vapor deposition (UHV/CVD) system can deposite poly-Si film without any laser or furnace annealing. The deposition pressure is superior to that deposited by low pressure chemical vapor deposition (LPCVD) system. The threshold voltage and mobility deviation for UHV/CVD are and 100mtorr~120mtorr for LPCVD system. In this thesis, NH3 was used to passivate the devices. It has obvious improvement on device performance after plasma passivation, i.e. the mobility increases、threshold voltage decreases、subthreshold swing decreas
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29

Lin, Hsiao-Yi, and 林孝義. "Low-Temperature Fabricated Polycrystalline Silicon Thin-Film Transistors." Thesis, 1997. http://ndltd.ncl.edu.tw/handle/13707941873360483657.

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博士<br>國立交通大學<br>電子工程學系<br>85<br>The increase in the grain size and the deposition of high quality films are commonly carried out to improve the characteristics of polycrystalline silicon (poly-Si) thin film transistors (TFTs). An ultrahigh vacuum chemical vapor deposition (UHV/CVD) system with very low base and deposition pressures was used to deposit high quality poly-Si films. Due to the as-deposited poly-Si films, laser or furnace anneal is not necessary. However, the grain growth rate i
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30

Kang, Chih-Kai, and 康智凱. "Study of Tungsten-Spacer Polycrystalline Silicon Thin Film Transistors." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/33241351040728515702.

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碩士<br>國立中山大學<br>物理學系研究所<br>90<br>In this thesis, we successfully fabricated GOLD ( gate-overlapped LDD ) polycrystalline silicon thin-film transistors ( poly-Si TFTs ) with selectively deposited W spacers. Under appropriate deposition conditions, tungsten ( W ) films can be selectively deposited on poly-Si gate electrodes to form spacers without any additional etching process. Compared with the conventional poly-TFTs without LDD structures, our devices effectively lower the leakage current and sustain a comparable on current. The transconductance of our devices is compatible to that of convent
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31

Yan, Zhi-Qing, and 楊志清. "Fabrication and Characterization of the Polycrystalline-Diamond-Film MISFET." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/09407927106373510753.

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碩士<br>國立中山大學<br>電機工程學系研究所<br>88<br>In this thesis﹐ As-grown and H-treated polycrystalline diamond film Metal-Insulator-Semiconductor Field-Effect-Transistor on the p-type surface semiconductive layers of undoped hydrogen-terminated CVD diamond films were successfully fabricated using a new fabrication process[1-2]. This new fabrication process of the polycrystalline diamond film MISFET exploits selected area deposition (SAD)[3] with Shadow Mask and indeed possesses low cost and less process﹐so it was a best alternation for diamond device fabrication recently. Next, a modified equivalent c
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32

Wu, Tze-Chien, and 吳子建. "Study of Low-Temperature Polycrystalline Silicon Thin-Film Transistors." Thesis, 1999. http://ndltd.ncl.edu.tw/handle/11302562395907923993.

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碩士<br>國立交通大學<br>電子工程系<br>87<br>Study of Low-Temperature Polycrystalline Silicon Thin-Film Transistors Student: Tze-Chien Wu Advisor: Prof. S. M. Sze Institute of Electronics National Chiao Tung University Abstract Although the best device and circuit performances have been reported for TFTs fabricated using a high temperature (typically 950。C or above) process, such devices require costly quartz substrates. On the contrary, low temperature technologies (m
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33

Wang, Fang-Shing, and 汪芳興. "Fabrication and Characterization of Polycrystalline Silicon Thin-Film Transistors." Thesis, 1997. http://ndltd.ncl.edu.tw/handle/83160003174491913161.

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博士<br>國立交通大學<br>電子工程學系<br>85<br>In this thesis, we firstly discuss the dosage effect on dopant activation in polysilicon films. The arsenic (for n-type) and boron (for p-type) were implanted into low-pressure chemical vapor deposited (LPCVD) amorphous silicon(a-Si) films and then annealed in a furnace with different temperatures. For the arsenic-implanted specimens with dosage of 4E14 cm-2,an increase of sheet resistance was observed with increasing annealing temperature for the temperature
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34

Liao, Tai-Shun, and 廖大舜. "Applications of SiGe on The Polycrystalline Silicon Thin-Film Transistors." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/80497423033967662610.

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碩士<br>國立交通大學<br>電子工程系<br>90<br>In this dissertation, we proposed two different novel polycrystalline-silicon thin-film transistors (poly-Si TFTs) to improve device performance. Firstly, a new SiGe spacer with lightly-doped drain (LDD) structure was fabricated to reduce the anomalous leakage current of poly-Si TFTs. The SiGe spacer was selectively grown in ultra-high vacuum chemical vapor deposition (UHVCVD) system at 550°C. The resultant SiGe spacer TFTs features a self-aligned LDD region and no additional masks are required, which is ideally suitable for AMLCD applications. Our experimental r
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35

Cheng, Shih-Hao, and 鄭士豪. "Study of Channel Engineering in Polycrystalline Silicon Thin-Film Transistors." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/19477765984365013945.

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碩士<br>國立臺灣科技大學<br>電子工程系<br>93<br>The poly-silicon thin film transistors (poly-Si TFTs) are attractive for many applications such as memory, active matrix liquid crystal displays (AMLCDs) and digital cameras. It is because of the electron mobility of poly-Si TFTs are about 100 times than these of the amorphous silicon (a-Si) TFTs. In this thesis, four different channel doping concentration (undope, 1×1016cm-3, 5×1016cm-3 and 1×1017cm-3) are used to change the driving ability and device characteristics of the n-channel poly-Si TFTs. And we use TSUPREM-4 process simulation and MEDICI device chara
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36

Yang, Chien-Kuo, and 楊健國. "Study of Process Effects on Polycrystalline-Silicon Thin-Film Transistor." Thesis, 1996. http://ndltd.ncl.edu.tw/handle/34519426616941731981.

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博士<br>國立交通大學<br>電子研究所<br>84<br>Firstly, electrical characteristics of thin-film transistors fabricated on nitrogen-implanted poly-Si were investigated. Results showed that incorporated-nitrogen had a passivation effect. Hot-carrier reliability was also improved. A donor effect of the nitrogen in poly-Si was found which affected overall passivation effect on the p- channel TFT''s. Then, effects of plasma passivation on poly-Si TFT''s using thin stacked oxide/nitride/oxide (ONO) gate-dielect
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37

Wang, Chao-Chun, and 王超駿. "Study on Photo Characteristics of Polycrystalline Silicon Thin-Film Transistors." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/77649271760449384607.

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碩士<br>國立交通大學<br>光電工程系所<br>96<br>In this thesis, we investigate two subjects. First is the study on the mechanism of photo leakage current. Secondly, the study on photo characteristics of polycrystalline silicon Thin-Film Transistors with lateral body terminal (LBT TFTs). In first subject, we implanted the channel of TFTs in order to reduce the photo leakage current. From reference, the photo leakage current is dependent on the channel and the thickness of active layer. The part of electron-hole pairs which generate by backlight could recombine by the trap which we create. The photo current bec
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38

Wu, Jun-Sen, and 吳駿昇. "Study of process effects on polycrystalline silicon thin film transistors." Thesis, 1997. http://ndltd.ncl.edu.tw/handle/11910716128649545739.

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碩士<br>國立交通大學<br>電子工程學系<br>85<br>Recnetly, polysilicon thin film transistors (TFTs) are receiving lots ofattentions because their potential applications in the realization of three-dimensional (3-D) integration as load resistors in ULSI high-density staticrandom access memories (SRAMs) and large-area active-matrix liquid crystaldisplays (AMLCDs) with on-glass integrated driver circuits. In this thesis,process effects on polycrystalline silicon thin film transistors (poly-Si TFTs)are investig
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39

Wang, Sheng-Wu, and 王聖裕. "Study on the low temperature polycrystalline silicon thin film transistors." Thesis, 1997. http://ndltd.ncl.edu.tw/handle/38588640528489875368.

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碩士<br>國立清華大學<br>電機工程學系<br>85<br>Polycrystalline-silicon（poly-Si）thin film transistor（TFTs）at low processing temperature and low thermal budget have been fabricated using the silicon nitride film as the gate insulator ，undoped polycrystalline silicon film as the channel layer ， and in-situ doped n-type polycrystalline silicon film as the contact layer as-deposited by electron cyclotron resonance chemical vapor deposition（ECR-CVD）．In this process，long-term recrystallization in undoped poly-Si
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40

Yang, Wen-Ze, and 楊文誌. "Fabrication and Characterization of Low-Temperature Polycrystalline Silicon Thin-Film Transistors." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/42865514825696294500.

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碩士<br>國立交通大學<br>電子工程系<br>88<br>Polycrystalline silicon thin-film transistors (poly-Si TFTs) have been used as the pixel switching devices in Active-Matrix Liquid-Crystal Displays (AMLCDs) widely. Unfortunately, the extremely low field-effect mobility (typically below 1 cm2/V-s) in a-Si:H TFTs limits the technology from being developed to form integrated drive circuits on the active matrix plate. The mobilities of amorphous TFTs (a-Si) is not sufficient for useful circuitry. The low electron field effect mobility attainable with these devices limits their applications to the switching elements
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41

Fan, Ching-Lin, and 范慶麟. "Improving technologies of low-temperature processed polycrystalline silicon thin-film transistors." Thesis, 1995. http://ndltd.ncl.edu.tw/handle/53498722790218768606.

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碩士<br>國立交通大學<br>電子研究所<br>83<br>In order to use glass substrate, low temperature processed (LTP) poly-Si TFT will be the main tendency. To improve the performance of (LTP) poly-Si TFT, we propose three kinds of improving methods that will be decribed in this thesis. The first method is to scale down the thickness of the gate insulator. To scale down the TFTs gate oxide can acquire an more excellent ON state performance than the TFTs thick gate oxide. The second method is the new two-steps an
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42

Huang, Sin-ping, and 黃信評. "Multiple Nanowire Channel Polycrystalline Silicon Thin Film Transistor for RF Applications." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/d8um22.

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碩士<br>國立臺北科技大學<br>電腦與通訊研究所<br>102<br>We investigated RF TFT DC and high frequency performances with different gate layout design and different process condition in this thesis. First of all, by observing the changes of gate length and gate direct finger contact, we examined the electron parameter relation. After realizing the changing structure of high frequency performance to analyze how different gate structures affected the small signal parameter is necessary and to make high frequency performance optimal. After that we focused on how to improve RF TFT characteristics through different proc
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43

Li, Ya-Huei, and 李雅惠. "Nanoscale studies of domain-growth dynamics in polycrystalline ferroelectric thin film." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/36992873439517397647.

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碩士<br>國立成功大學<br>物理學系碩博士班<br>96<br>We report the results of nanoscale domain wall motion and switching dynamics on polycrystalline Pb(Zr0.52Ti0.48)O3 (PZT) thin films during ferroelectric polarizing processes, which were investigated by scanning probe microscopy (SPM). PZT (Pb(ZrTi)O3) thin films were synthesized by metal-organic decomposition. Relatively high percentage of 90o domain switching was found under external fields in the PZT films near morphotropic phase boundary. When the domain wall propagated inside the voltage-written grain, it followed the creep motion and stable intermediate d
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44

Lai, Tz-Chiang, and 賴自強. "Development of Ultra-Low-Temperature Polycrystalline Silicon Thin Film Deposition technology." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/91500151403653087461.

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碩士<br>國立臺灣科技大學<br>電子工程系<br>95<br>In order to realize the purpose of plastic substrate thin film transistor , We have successfully deposited semitransparent film that the main composition of the film is silicon nitride by using reactive sputtered method. And, it has light absorption (absorption coefficient from 0 to 56000 cm-1) that can be applied as heat retaining layer to get Low Temperature poly-Si on plastic substrates after excimer laser annealing. By adjusting the flow rate of Ar and N2, we can control the absorption coefficient of the semitransparent film at will.After get the optimum co
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45

Zhang, Jia-Wei, and 張家偉. "Structure Design of Polycrystalline Silicon Thin-Film-Transistors (Poly-Si TFTs)." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/43301490118093242811.

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碩士<br>國立臺灣科技大學<br>電子工程系<br>97<br>Polycrystalline silicon thin-film-transistors (Poly-Si TFTs) have been widely used in various applications, such as static random memories (SRAMs), photodetector amplifier, scanner, and active matrix liquid crystal displays (AMLCDs). The electron field mobility of the ploy-Si TFT is larger than that of the amorphous-Si (a-Si) TFT, allowing the integration of both active matrix and driving circuitry on the same substrate. However, the conventional self-aligned poly-si TFT induces several undesired effects in the electrical characteristics, including large off-st
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46

Lin, Zheng-Wen, and 林正文. "The Reliability Study of Low Temperature Polycrystalline Silicon Thin Film Transistors." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/55393635256004054157.

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碩士<br>國立中興大學<br>電機工程學系<br>93<br>In the first part, the constant voltage stress of the low temperature polycrystalline silicon thin film transistors (LTPS TFTs) was studied, and we analyzed the variation between the characteristics of the TFTs and stress time. We find the device’s performances of channel perpendicular to the scan direction of ELA were worse than that of channel parallel to the scan direction of ELA. In the second part, we study the constant current stress on the TFTs because there is one TFT supplying current in the pixel circuits of organic light emitting diode displays (OLED
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47

Wang, Sheng Hsuan, and 王聖萱. "Study of Short-Channel Effects in Polycrystalline Silicon Thin-Film Transistors." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/79374611313305861504.

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碩士<br>國立交通大學<br>電子工程系<br>91<br>In this thesis, short channel effects in polycrystalline silicon thin-film transistors are investigated by the direct measurement through T-gate body contact . To study the short channel mechanisms more carefully, devices with different channel dimension, varying grain size, and different grain boundary trap density are fabricated and compared. It is found that with decreasing channel length, the devices exhibit improved normalized turn on current and decreased threshold voltage. However, severe kink effect which generated by the impact ionization also observed.
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48

Deuermeier, Jonas. "Origins of limited electrical performance of polycrystalline Cu2O thin-film transistors." Doctoral thesis, 2016. http://hdl.handle.net/10362/20228.

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In this thesis, cuprous oxide Cu2O was investigated concerning its ability to function as ptype channel in thin-film transistors. The material was chosen for its promising electronic characteristics as bulk single crystal. In order to be competitive with other technological solutions for flexible thin-film electronics, the temperature during fabrication has to remain below 200 C. Following this approach, a tremendous gap between potential and actual electrical performance of Cu2O thin-film transistors is encountered. The aim of this thesis is to show the reasons for this discrepancy. Relevant
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49

Deuermeier, Jonas. "Origins of limited electrical performance of polycrystalline Cu2O thin-film transistors." Phd thesis, 2017. https://tuprints.ulb.tu-darmstadt.de/5915/7/Dissertation%20Jonas%20Deuermeier.pdf.

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In this thesis, cuprous oxide Cu2O was investigated concerning its ability to function as p-type channel in thin-film transistors. The material was chosen for its promising electronic characteristics as bulk single crystal. In order to be competitive with other technological solutions for flexible thin-film electronics, the temperature during fabrication has to remain below 200°C. Following this approach, a tremendous gap between potential and actual electrical performance of Cu2O thin-film transistors is encountered. The aim of this thesis is to show the reasons for this discrepancy. Relev
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50

YE, JIA-HONG. "Bias Temperature Instability of Low Temperature Polycrystalline Silicon Thin-Film Transistor." 2007. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0001-2708200702100000.

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