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Journal articles on the topic 'Polycrystalline film'

Author: Grafiati

Published: 28 May 2022

Last updated: 31 July 2025

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1

Chakraborty, Jay. "Phase Transformation in Ultra-Thin Films." Advanced Materials Research 996 (August 2014): 860–65. http://dx.doi.org/10.4028/www.scientific.net/amr.996.860.

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Thickness dependent structural phase transformation in thin polycrystalline metal films has been reviewed. Various effects of film thickness reduction on film microstructure have been identified. Film thickness dependent structural phase transformation has been treated thermodynamically taking polycrystalline titanium (Ti) thin film as model example.

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2

Liao, Yang, Wei Min Shi, Wei Guang Yang, Ji Rong Li, Jun Qian, and Shu Yi Lu. "Properties of Ohmic Contact of Au Electrode on Polycrystalline Mercuric Iodide." Advanced Materials Research 690-693 (May 2013): 1672–75. http://dx.doi.org/10.4028/www.scientific.net/amr.690-693.1672.

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Polycrystalline mercuric iodide films are being developed as a new detector technology for digital X-ray imaging. The properties of the contact between electrode and film play an important role in the performance of the polycrystalline mercuric iodide detector. In this paper, the films were grown on the thin film transistor (TFT) substrates via hot-wall physical vapor deposition method. Au front contacts were deposited onto the HgI2 films by thermal evaporation under a vacuum of 10-4Pa. The HgI2 films were characterized by X-ray diffraction (XRD). The surface morphology of the films before and

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3

Hossion, M. Abul, and B. M. Arora. "Synthesis of Boron-Doped Silicon Film Using Hot Wire Chemical Vapor Deposition Technique." Crystals 10, no. 4 (2020): 237. http://dx.doi.org/10.3390/cryst10040237.

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Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO2, glass/ITO/TiO2, Al2O3, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10−2 Ω-cm for the polycrystalline silicon film, which was suitable for using as a

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Burke, M. G., R. E. Witkowski, and R. T. Blackham. "Microstructure of polycrystalline diamond film." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 4 (1990): 708–9. http://dx.doi.org/10.1017/s0424820100176678.

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Diamond films have attracted considerable attention for use in a wide variety of industrial and commercial applications, particularly as coatings. Diamond coatings will enhance the performance of electro-optical systems, space-based photovoltaic power sources, packages for power electronic devices, and wear-limited processing equipment. These films are generally grown via plasma deposition or chemical vapor deposition techniques using a mixture. To characterize the as-grown diamond films, a variety of techniques including transmission electron microscopy are utilized. For this study, films wer

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5

Wang, Nan, Yu-Xiang Dai, Tian-Lin Wang, Hua-Zhe Yang, and Yang Qi. "Investigation of growth characteristics and semimetal–semiconductor transition of polycrystalline bismuth thin films." IUCrJ 7, no. 1 (2020): 49–57. http://dx.doi.org/10.1107/s2052252519015458.

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The preferred orientation growth characteristics and surface roughness of polycrystalline bismuth (Bi) thin films fabricated on glass substrates using the molecular beam epitaxy method were investigated at temperatures ranging from 18 to 150°C. The crystallization and morphology were analyzed in detail and the polycrystalline metal film structure-zone model (SZM) was modified to fit the polycrystalline Bi thin film. The boundary temperature between Zone T and Zone II in the SZM shifted to higher temperatures with the increase in film thickness or the decrease of growth rate. Furthermore, the e

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6

Miller, K. T., and F. F. Lange. "Highly oriented thin films of cubic zirconia on sapphire through grain growth seeding." Journal of Materials Research 6, no. 11 (1991): 2387–92. http://dx.doi.org/10.1557/jmr.1991.2387.

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A two-step process has been developed to form highly oriented thin films in material systems with dissimilar crystal structures and interatomic spacings. This processing method utilizes current polycrystalline thin film deposition techniques. In this method, a polycrystalline thin film is first deposited and heat treated to promote its breakup into isolated grains. The breakup process favors those grains that have a low substrate interfacial energy and so produces a film of highly oriented but isolated grains. In the second process step, another polycrystalline thin film is deposited. The remn

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7

Rusakova, I., A. Hamed, and P. H. Hor. "TEM study of C70 polycrystalline films." Journal of Materials Research 9, no. 11 (1994): 2814–22. http://dx.doi.org/10.1557/jmr.1994.2814.

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Using conventional and high resolution TEM, we have studied the microstructure of C70 polycrystalline films, prepared by sublimation of C70 powder onto glass, carbon holey film, and sapphire substrates held at 200 °C. An fcc structure with lattice parameter 1.50 nm is observed for the films on glass and amorphous carbon. A different structure and stronger adherence to the substrate was observed for the thin film grown on sapphire, suggesting a stronger molecule-substrate interaction in this case. Thicker films on sapphire, however, did have fcc structure. In all cases, the film grows in large

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8

M, Abul Hossion, and M. Arora Brij. "Synthesis of Boron-Doped Silicon Film Using Hot Wire Chemical Vapor Deposition Technique." Crystals 10, no. 4 (2020): 237–44. https://doi.org/10.3390/cryst10040237.

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Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO<sub>2</sub>, glass/ITO/TiO<sub>2</sub>, Al<sub>2</sub>O<sub>3</sub>, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10<sup>−2</sup> &Ome

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9

Miller, K. T., F. F. Lange, and D. B. Marshall. "The instability of polycrystalline thin films: Experiment and theory." Journal of Materials Research 5, no. 1 (1990): 151–60. http://dx.doi.org/10.1557/jmr.1990.0151.

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Dense polycrystalline thin films of ZrO2 (3 and 8 mol % Y2O3) were produced by the pyrolysis of zirconium acetate precursor films, which were deposited on single crystal Al2O3 substrates by spin-coating aqueous solutions of zirconium acetate and yttrium nitrate. Dense films were heat treated to encourage grain growth. With grain growth, these films broke into islands of ZrO2 grains. Identical areas were examined after each heat treatment to determine the mechanism that causes the polycrystalline film to uncover the substrate. Two mechanisms were detailed: (a) for a composition which inhibited

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10

SONG, HUIJIN, LILI WU, JIAGUI ZHENG, LIANGHUAN FENG, ZHI LEI, and JINGQUAN ZHANG. "STUDY ON AlSb POLYCRYSTALLINE THIN FILMS PREPARED BY VACUUM CO-EVAPORATION." International Journal of Modern Physics B 25, no. 13 (2011): 1747–55. http://dx.doi.org/10.1142/s0217979211100515.

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In this paper, the AlSb polycrystalline thin films were prepared by vacuum co-evaporation technology and their structural, optical and electrical properties have been studied. XRD results showed that the as-deposited AlSb amorphous thin films transformed to polycrystalline state after annealed in vacuum at temperatures higher than 540°C. The process of phase change was observed to depend on the annealing temperature and the film composition. Some irreversible changes took place in the annealed films during the measurement of the temperature dependence of the film conductance. The conductance a

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11

Ngoc Thao, Pham, Shinya Yoshida, and Shuji Tanaka. "Fabrication and Characterization of PZT Fibered-Epitaxial Thin Film on Si for Piezoelectric Micromachined Ultrasound Transducer." Micromachines 9, no. 9 (2018): 455. http://dx.doi.org/10.3390/mi9090455.

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This paper presents a fibered-epitaxial lead zirconate titanate (PZT) thin film with intermediate features between the monocrystalline and polycrystalline thin films for piezoelectric micromachined ultrasound transducer (pMUT). The grain boundaries confirmed by scanning electron microscopy, but it still maintained the in-plane epitaxial relationship found by X-ray diffraction analyses. The dielectric constant (εr33 = 500) was relatively high compared to those of the monocrystalline thin films, but was lower than those of conventional polycrystalline thin films near the morphotropic phase bound

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12

Wu, Rui, and Feng Chen. "Interplay between salt precipitation, corner liquid film flow, and gas–liquid displacement during evaporation in microfluidic pore networks." Journal of Applied Physics 133, no. 7 (2023): 074701. http://dx.doi.org/10.1063/5.0135135.

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Visualization experiments with microfluidic pore networks are performed in this work to disclose interplay between salt precipitation, the corner liquid film flow, and gas–liquid displacement during evaporation. Two forms of salt precipitation are revealed: aggregated polycrystalline structures and large bulk crystals. It is found that gas bubbles can be formed because of imbibition of liquid into aggregated polycrystalline structures. The length of a corner liquid film can affect the direction of growth of the aggregated polycrystalline structures connected to the corner liquid film. Disconti

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13

Van Anh Nguyen, Thi, and Yasushi Endo. "Evaluation of the magnetization dynamics in various thick YIG films using our proposed measurement technique." AIP Advances 12, no. 3 (2022): 035234. http://dx.doi.org/10.1063/9.0000302.

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This paper describes the evaluation of magnetization dynamics in YIG polycrystalline films with various thicknesses using our proposed measurement technique. The saturation magnetostriction ( λs) are approximately less than −1.0×10−6 regardless of the film thickness and are lower than that of bulk polycrystalline YIG, which might be attributed to the structural and/or magnetic inhomogeneities. On the other hand, the in-plane effective damping constant ( αeff) decreases approximately from 0.00384±0.00029 to 0.00316±0.00013 with the increase of film thickness, and their values are much higher th

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14

Grot, S. A., S. Lee, G. Sh Gildenblat, et al. "Rectification and internal photoemission in metal/CVD diamond and metal/CVD diamond/silicon structures." Journal of Materials Research 5, no. 11 (1990): 2497–501. http://dx.doi.org/10.1557/jmr.1990.2497.

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Schottky diodes were formed with free-standing polycrystalline thin film diamond base as well as with polycrystalline diamond films grown on crystalline silicon. Current-voltage and internal photoemission measurements were used to characterize the Schottky diodes and the diamond film. Internal photoemission measurements yielded a barrier height of 1.15 eV. A comparison of experimental data for metal contacts to free-standing diamond films and those on silicon substrates indicates that both rectification and internal photoemission originate at the metal/diamond interface.

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15

Rabkin, Eugen, and Leonid Klinger. "Enhanced Diffusional Self-Healing of Polycrystalline Thin Films." Defect and Diffusion Forum 237-240 (April 2005): 524–30. http://dx.doi.org/10.4028/www.scientific.net/ddf.237-240.524.

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We considered the flattening of perturbed surface of a thin stress-free polycrystalline film with columnar microstructure deposited on rigid substrate. We show that the mass transport along the film/substrate interface and along the grain boundaries significantly contributes to the overall rate of surface flattening of the film. The diffusion along the film/substrate interface and along the grain boundaries is driven by the capillary stresses in the film. Using the approximation of small surface slopes, we calculated the distribution of capillary stresses in the film, and derived an explicit e

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16

Chiu, Chien C., Seshu B. Desu, Gang Chen, Ching Yi Tsai та William T. Reynolds. "Deposition of epitaxial β–SiC films on porous Si(100) from MTS in a hot wall LPCVD reactor". Journal of Materials Research 10, № 5 (1995): 1099–107. http://dx.doi.org/10.1557/jmr.1995.1099.

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Epitaxial β-SiC thin films were grown on modified Si(100) substrates from methyltrichlorosilane (CH3SiCl3 or MTS) in a hot wall reactor by using low pressure chemical vapor deposition (LPCVD). At 1150 °C, the growth rate of the β-SiC films was 120 Å/min. Epitaxial β-SiC(100) thin films were deposited after the deposition time of 12.5 min. However, the crystallinity of the deposited films was influenced by the deposition time. For example, the occurrence of rotational β-SiC(100) crystals and polycrystalline β-SiC with a highly preferred orientation of (100) planes was obtained for the depositio

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17

Tsuchiya, Tetsuo, Kais Daoudi, Tomohiko Nakajima, and Toshiya Kumagai. "Epitaxial Growth of LSMO Film Prepared by Excimer Laser-Assisted Metal Organic Deposition (ELAMOD)." Key Engineering Materials 388 (September 2008): 133–36. http://dx.doi.org/10.4028/www.scientific.net/kem.388.133.

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The La1-xAxMnO3 (A=Sr, Ca, Ba) film was prepared by excimaer laser-assisted metal organic deposition (ELAMOD). To understand the important controlling factor of the epitaxial growth using ELAMOD, the effects of the substrate temperature, substrate type, wavelength, and film thickness on the epitaxial growth were investigated. When the film thickness was 200nm with heating at 250°C, a polycrystalline LSMO film was formed on the LAO substrate. On the other hand, at 80nm, an epitaxial LSMO film was formed on the LAO substrate at 500°C. The epitaxial growth of the LSMO film was found to be depende

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18

Wang, Y. L., M. C. Li, X. K. Chen, et al. "Nano-Polycrystalline Vanadium Oxide Thin Films Prepared by Pulsed Laser Deposition." Journal of Nanoscience and Nanotechnology 8, no. 5 (2008): 2604–8. http://dx.doi.org/10.1166/jnn.2008.18290.

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Nano-polycrystalline vanadium oxide thin films have been successfully produced by pulsed laser deposition on Si(100) substrates using a pure vanadium target in an oxygen atmosphere. The vanadium oxide thin film is amorphous when deposited at relatively low substrate temperature (500 °C) and enhancing substrate temperature (600–800 °C) appears to be efficient in crystallizing VOx thin films. Nano-polycrystalline V3O7 thin film has been achieved when deposited at oxygen pressure of 8 Pa and substrate temperature of 600 °C. Nano-polycrystalline VO2 thin films with a preferred (011) orientation ha

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19

Bonfigli, Francesca, Sabina Botti, Maria Aurora Vincenti, et al. "Fluorescence and Raman Micro-Spectroscopy of LiF Films Containing Radiation-Induced Defects for X-ray Detection." Condensed Matter 8, no. 4 (2023): 103. http://dx.doi.org/10.3390/condmat8040103.

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Lithium fluoride (LiF) film detectors for extreme ultraviolet radiation, soft and hard X-rays, based on the photoluminescence of radiation-induced electronic defects, have been proposed and are currently under further development and investigation. LiF film detectors are versatile and can be integrated in different experimental apparatus and imaging configurations. LiF can be grown in the form of polycrystalline thin films and it is compatible with several substrates. The radiation-induced color center (CCs) photoluminescence (PL) response can be enhanced through the appropriate choice of subs

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20

Dougherty, G. G., A. A. Pisano, and T. Sands. "Processing and morphology of permeable polycrystalline silicon thin films." Journal of Materials Research 17, no. 9 (2002): 2235–42. http://dx.doi.org/10.1557/jmr.2002.0329.

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It is known that thin films of polycrystalline silicon, deposited under the right conditions, can be permeable to HF-based etching solutions. While these films offer unique capabilities for microfabrication, both the poor reproducibility of the permeable film properties and the lack of a detailed physical understanding of the material have limited their application. This work provides a methodical study of the relationship between process, microstructure, and properties of permeable polycrystalline silicon thin films. It is shown that the permeability is a result of small pores, on the order o

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21

Nahm, S., L. Salamanca-Riba, D. L. Partin, and J. Heremans. "Transmission electron microscopy studies of bismuth films." Journal of Materials Research 5, no. 4 (1990): 784–88. http://dx.doi.org/10.1557/jmr.1990.0784.

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We have studied the structure of Bi films grown on BaF2 substrates as a function of the distance from the interface with the substrate. Close to the interface the films show a polycrystalline structure and probably contain some amorphous regions. The crystallite size increases as the distance from the interface increases. At distances ≥90 nm the film becomes single crystalline and has the (111) trigonal direction normal to the film surface. Our structural data relate very well to mobility measurements performed on samples grown under the same conditions. Our results suggest that the carrier mo

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22

DeNatale, J. F., and P. H. Kobrin. "Lattice distortion effects on electrical switching in epitaxial thin film NdNiO3." Journal of Materials Research 10, no. 12 (1995): 2992–95. http://dx.doi.org/10.1557/jmr.1995.2992.

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Crystalline thin films of NdNiO3 have been epitaxially grown on the (100) face of single-crystal LaAlO3 substrates. These films exhibit the characteristic reversible change in electrical conductivity with temperature previously observed in bulk polycrystalline material. The temperature of the electrical transition in the epitaxial thin films was lower than reported for the bulk polycrystalline ceramics. This effect is attributed to lattice strains associated with the film processing and interfacial lattice matching constraints.

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23

Wang, Y. L., R. Levi-Setti, J. M. Chabala, et al. "Ion microprobe analysis of laser-deposited Y–Ba–Cu thin film: Effects of anneal temperature." Journal of Materials Research 4, no. 5 (1989): 1087–92. http://dx.doi.org/10.1557/jmr.1989.1087.

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We have employed high spatial resolution (<50 nm) SIMS to study thin film deposited on SrTiO3, produced by pulsed laser evaporation of bulk stoichiometric YBa2Cu3Ox pellets derived from either BaCO3 or Ba3N2. The grain growth, film-substrate interaction, and carbon contamination of the films were examined as a function of post-deposition anneal temperature ranging between 700 °C and 900 °C. On the surface of both types of film, we found overgrowth crystals, which are enriched in copper, that increased in size from a few tenths of a micron to several microns with increasing anneal temperatur

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24

Islam, Md Toriqul, and Mool C. Gupta. "Synthesis, structural, optical, and electrical properties of continuous wave and pulse laser sintered semiconductor Ge films." Semiconductor Science and Technology 37, no. 3 (2022): 035015. http://dx.doi.org/10.1088/1361-6641/ac4d16.

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Abstract The crystallization process of Ge films by a continuous wave (CW) and a pulsed laser is very effective for producing smooth, homogeneous, and crack-free polycrystalline films to use in transistors, photodetectors, and photovoltaic applications. However, little progress has been made to directly crystallize Ge films based on micro/nanoparticles (NPs) using the laser sintering (LS) process. In this paper, a simultaneous LS and crystallization process of Ge micro/NPs to develop thick polycrystalline films on silicon substrates is demonstrated. Silicon substrates with a SiO2 insulating la

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25

Van Calster, A., A. Vervaet, I. De Rycke, J. De Baets, and J. Vanfleteren. "Polycrystalline CdSe films for thin film transistors." Journal of Crystal Growth 86, no. 1-4 (1988): 924–28. http://dx.doi.org/10.1016/0022-0248(90)90826-7.

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26

Kasikov, Aarne, Aivar Tarre, and Margus Marandi. "Dispersion of chromia films (eskolaite) in UV-VIS." Journal of Electrical Engineering 70, no. 7 (2019): 36–43. http://dx.doi.org/10.2478/jee-2019-0039.

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Abstract Atomic layer deposited polycrystalline Cr2O3 films grown from chromyl chloride and methanol were analysed using spectrophotometry, spectral ellipsometry and atomic force microscopy. The films possessed polycrystalline eskolaite structure with rough sublayer in contact with air. Using the positions and peak widths of the two visible absorption bands as fixed from absorption measurements, we could determine the optical dispersion of the film material in 1.3 – 6 eV energy region. A direct band gap of chromia film grown in these conditions was 3.2 eV, the other also direct absorption band

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27

Wang, Ju, Wei Liu, Cuncun Wu, Ning Zhu, Congyue Liu, and Shufeng Wang. "In-plane stimulated emission of polycrystalline CH3NH3PbBr3 perovskite thin films." RSC Advances 10, no. 5 (2020): 2703–8. http://dx.doi.org/10.1039/c9ra08619f.

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MAPbBr<sub>3</sub> perovskite thin film contains large crystal flakes, which support the in-plane stimulated emission and its propagation within these polycrystalline films. The emission scatters at the natural or artificial edge of the film.

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28

CHOI, W. K., K. L. PEY, H. B. ZHAO, T. OSIPOWICZ, and Z. X. SHEN. "NICKEL SILICIDATION ON POLYCRYSTALLINE SILICON GERMANIUM FILMS." International Journal of Modern Physics B 16, no. 28n29 (2002): 4323–26. http://dx.doi.org/10.1142/s0217979202015352.

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The interfacial reactions of Ni with polycrystalline Si 0.8 Ge 0.2 films at a temperature range of 300-900°C by rapid thermal annealing for 60s are studied. The sheet resistances of the silicide films were relatively low at ~10 ohm/sq for samples annealed below 600°C. X-Ray diffraction results suggested the existence of low resistivity phase Ni(Si 1-x Ge x ) in the film. The significant increase in sheet resistance for films annealed at 700-900°C is probably due to the reduction in the density of Ni(Si 1-x Ge x ) as a result of fast Ni diffusion at high annealing temperatures. Fast grain bound

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29

Kobashi, Koji, Shigeaki Miyauchi, Koichi Miyata, Kozo Nishimura, and Jorge J. Rocca. "Etching of polycrystalline diamond films by electron beam assisted plasma." Journal of Materials Research 11, no. 11 (1996): 2744–48. http://dx.doi.org/10.1557/jmr.1996.0348.

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Polycrystalline diamond films were processed in a direct current plasma produced by a self-focused electron beam using combinations of H2, O2, and He as the processing gas. The film surfaces were observed by scanning electron microscopy, and characterized by x-ray photoelectron spectroscopy. It was found that for the case in which O2 was included in the processing gas, a high density of etch pits appeared on (100) faces of diamond grains, and oxygen was either physisorbed or chemisorbed at the film surface. It was demonstrated that the etching apparatus used was capable of forming at least a 5

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30

Hu, Weiguang, Truong Thi Hien, Dojin Kim, and Hyo Sik Chang. "Enhancement in Photoelectrochemical Performance of Optimized Amorphous SnS2 Thin Film Fabricated through Atomic Layer Deposition." Nanomaterials 9, no. 8 (2019): 1083. http://dx.doi.org/10.3390/nano9081083.

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Two-dimensional (2D) nanomaterials have distinct optical and electrical properties owing to their unique structures. In this study, smooth 2D amorphous tin disulfide (SnS2) films were fabricated by atomic layer deposition (ALD), and applied for the first time to photoelectrochemical water splitting. The optimal stable photocurrent density of the 50-nm-thick amorphous SnS2 film fabricated at 140 °C was 51.5 µA/cm2 at an oxygen evolution reaction (0.8 V vs. saturated calomel electrode (SCE)). This value is better than those of most polycrystalline SnS2 films reported in recent years. These resul

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Dallocchio, Marie, Alexis Boileau, Bernard Mercey, et al. "Tunable magnetic and magnetotransport properties in locally epitaxial La_0.67Sr_0.33MnO₃ thin films on polycrystalline SrTiO₃, by control of grain size." Journal of Physics D: Applied Physics 55, no. 23 (2022): 235303. http://dx.doi.org/10.1088/1361-6463/ac5a1f.

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Abstract La0.67Sr0.33MnO3 (LSMO) thin films have been grown by pulsed laser deposition on SrTiO3 using combinatorial substrate epitaxy (CSE) approach, i.e. polycrystalline substrates with micrometer-size grains. The crystallographic domains size of those polycrystalline substrates can be controlled between 2 and 45 µm depending on the annealing temperature during synthesis. Each grain of the substrate acts as a single crystalline growth template promoting local epitaxy with a reproduction of the substrate grain structure in the thin film. Therefore, a fine-tuning of the substrate grain metrics

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32

Jones, K. M., F. S. Hasoon, A. B. Swartzlander, M. M. Al-Jassim, T. L. Chu, and S. S. Chu. "The morphology and microstructure of polycrystalline CdTe thin films for solar cell applications." Proceedings, annual meeting, Electron Microscopy Society of America 50, no. 2 (1992): 1384–85. http://dx.doi.org/10.1017/s0424820100131553.

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Polycrystalline thin films of II-VI semiconductors on foreign polycrystalline (or amorphous) substrates have many applications in optoelectronic devices. In contrast to the extensive studies of the heteroepitaxial growth of compound semiconductors on single-crystal substrates, the nucleation and growth of thin films of II-VI compounds on foreign substrates have received little attention, and the properties of these films are often controlled empirically to optimize device performance. A better understanding of the nucleation, growth, and microstructure will facilitate a better control of the s

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H. Taha, Suroor, and Thamir A. Jumah. "Structural and Electrical Specification of ZrO2Nano Thin Film Prepared by PLD." Al-Nahrain Journal of Science 24, no. 2 (2021): 27–32. http://dx.doi.org/10.22401/anjs.24.2.05.

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Zirconium dioxide was prepared as a thin film by using pulse laser deposition (PLD).Subsequently, the films had been thermally treated by annealing process at temperature 450 oC. The structural and electrical parameters of thin films were investigated. As-deposited films were amorphous and had a large surface density of ablated particles. The Annealing process resulted change the phase from amorphous to polycrystalline. The X-ray diffraction of all these films has a polycrystalline structure with two different phases named tetragonal and monoclinic. Hall measurements indicate that the charge c

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Hsu, Jin-Cherng, and Yueh-Sheng Chiang. "Influence of Oxygen on Zinc Oxide Films Fabricated by Ion-Beam Sputter Deposition." ISRN Materials Science 2013 (October 3, 2013): 1–7. http://dx.doi.org/10.1155/2013/710798.

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In this study, zinc oxide films were deposited by an ion-beam sputter deposition in various oxygen partial pressures at room temperature. The films changed the structures from amorphous to polycrystalline with increasing the oxygen partial pressure (). The optimal was found at Torr because the film prepared at the oxygen partial pressure had the lowest resistivity and the highest transparence in the visible light region. The lowest resistivity results from a great number of oxygen vacancy sites formed on the polycrystalline surface as exposed to the atmosphere. Moreover, the film has the highe

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Lu, Xue Bin, Lin Hai Cui, and Hai Huang. "Piezoresistive and Mechanics Properties of Nanopolycrystalline Silicon Film Materials." Applied Mechanics and Materials 380-384 (August 2013): 4237–40. http://dx.doi.org/10.4028/www.scientific.net/amm.380-384.4237.

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The polycrystalline silicon films with same doping concentration and different thickness were prepared by low pressure chemical vapor deposition. The gauge factors of the films samples were tested, the results show that the piezoresistive properties of nanopolycrystalline silicon film (NPSF) exceed that of common polycrystalline silicon film (CPSF). To apply the NPSF to MEMS piezoresistive device effectively, the Youngs modulus of the NPSF were tested by in-situ nanomechanical test system, the results show that the Youngs modulus of the NPSF is about between 155GPa and 158GPa. It is very usefu

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Yan, Y., K. M. Jones, and M. M. Al-Jassim. "Transmission Electron Microscopy Study of Planar Defects in Polycrystalline CdTe Thin Films." Microscopy and Microanalysis 7, S2 (2001): 556–57. http://dx.doi.org/10.1017/s1431927600028853.

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CdTe is a promising photovoltaic material due to its near optimum band gap and high absorption coefficient. Polycrystalline, thin-film CdTe/CdS solar cells have demonstrated an efficiency of 15.8%. High density of extended defects is often found in polycrystalline CdTe films grown by close-spaced sublimation (CSS). So far, most investigations of defects in CdTe have focused on epitaxially grown films, and the reported extended defects are mainly lamellar twins. However, epitaxially grown films generally have a different microstructure compared to CSS grown polycrystalline CdTe thin films. in t

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Belevtsov, L. V. "Persistent current relaxation in polycrystalline superconducting thin films." International Journal of Modern Physics B 28, no. 22 (2014): 1450152. http://dx.doi.org/10.1142/s0217979214501525.

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The relaxation rate of persistent current is studied theoretically in superconducting polycrystalline thin films. It is shown that varying the material parameters of grain anisotropy, grain size and film thickness does guide to a change of the current relaxation rate (CRR) mode. The point of degeneracy of CRR was obtained. The film-thickness dependent maxima are found in the behavior of CRR.

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YAN, S. L., C. G. LIANG, R. X. HAN, et al. "GROWTH AND PROPERTIES OF YBCO SUPERCONDUCTING THIN FILMS PREPARED BY DC MAGNETRON SPUTTERING FROM A PAIR OF SUPERCONDUCTING STOICHIOMETRIC YBCO TARGETS." Modern Physics Letters B 03, no. 01 (1989): 31–35. http://dx.doi.org/10.1142/s0217984989000066.

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Superconducting YBCO thin films have been fabricated by dc magnetron sputtering from a pair of stoichiometric YBCO superconducting targets on polycrystalline ZrO 2 substrates. The post-annealing superconducting films exhibit the properties with the critical onset temperature of 95 K and zero resistivity temperature at 83 K. The relation between the composition of the film and the radial position of the substrate is investigated. The XRD analysis proved that the films are mainly orthorhombic polycrystalline structure.

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Godbole, V. P., and J. Narayan. "Synthesis of diamond films on Hastelloy." Journal of Materials Research 7, no. 10 (1992): 2785–90. http://dx.doi.org/10.1557/jmr.1992.2785.

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We have developed a two-step hot filament chemical vapor deposition method to form polycrystalline films of diamond on Hastelloy substrates. The first step at a lower temperature results in the deposition of a composite layer of carbon, diamond-like carbon, and diamond, which provide nucleation sites for diamond growth in the second step at a higher temperature. To obtain a cleaner amorphous carbon-free diamond film, we introduced an intermediate hydrogen etching step. Using this procedure, we have obtained high quality polycrystalline diamond film on Hastelloy substrates, as characterized by

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Kuo, Yue, and Chi-Chou Lin. "Polycrystalline Silicon Thin Film Formed By Multiple Pulsed Rapid Thermal Annealing – Intrinsic a-Si Film Thickness Effect." MRS Proceedings 1426 (2012): 269–74. http://dx.doi.org/10.1557/opl.2012.836.

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ABSTRACTThe polycrystalline n+/intrinsic silicon thin film stacks with various original intrinsic amorphous silicon layer thicknesses were formed using the multiple pulsed rapid thermal annealing process with the Ni-induced crystallization mechanism. The thick polycrystalline silicon stack was prepared by repeated steps of 1) amorphous silicon thin film deposition, 2) solution oxidation, 3) dehydrogenation, 4) pulsed rapid thermal annealing, and 5) oxide stripping. The poly-Si film properties, such as the grain size, orientation, and volume fraction of the crystalline phase, were related to th

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Albu-Yaron, Ana, Lev Margulis, Gary Hodes, and Rommel Noufi. "Electron Microscopy of CuInSe2 polycrystalline films." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 4 (1990): 704–5. http://dx.doi.org/10.1017/s0424820100176654.

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Despite the continuing interest in and research on CuInSe2 (CIS) as one of the prime candidate materials for thin film photovoltaics, there are still many gaps in the knowledge and understanding of this material. One area where there is still much to be learned is the microstructural properties of the CIS film and the effect of the substrate on these properties. Relatively few groups have studied these aspects. We have recently described an aggregate macrostructure and its component microstructure. Here we report on the microstructure of individual crystallites in the CIS films grown on differ

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Song, Lirong, Jiawei Zhang, and Bo Brummerstedt Iversen. "Enhanced thermoelectric properties of SnSe thin films grown by single-target magnetron sputtering." Journal of Materials Chemistry A 7, no. 30 (2019): 17981–86. http://dx.doi.org/10.1039/c9ta03252e.

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SnSe thin films were successfully grown using single-target magnetron sputtering. The SnSe thin film annealed at 700 K exhibits superior thermoelectric performance compared with previously reported SnSe films and polycrystalline SnSe bulk material.

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Witcomb, M. J., and V. Alberts. "Microscopy Study of Polycrystalline Chalcopyrite Thin Films." Microscopy and Microanalysis 6, S2 (2000): 460–61. http://dx.doi.org/10.1017/s1431927600034796.

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The I-III-VI (I= Cu, III= In and VI= Se) ternary chalcopyrite semiconductors are promising materials for the fabrication of thin film solar cells. The device properties of these polycrystalline CuInSe2-based solar cells are critically influenced by their structural features (i.e. grain sizes, uniformity and defect chemistry) and therefore require careful optimization. The structural features of the films were investigated by scanning electron microscopy (SEM), atomic force microscopy (AFM) and transmission electron microscopy (TEM). The results from this fundamental study were used to compare

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Li, Hai Feng, Yong Huang, Zhi Jian Wan, Hou Xing Zhang, and Y. Xu. "Influence of Deposition Processing Conditions on Polycrystalline Silicon Thin Film for Solar Cells on Ceramic Substrates." Materials Science Forum 475-479 (January 2005): 1231–34. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.1231.

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Various polycrystalline silicon thin films were deposited on Al2O3 ceramic substrates by RTCVD processing under different deposition conditions. The influence of deposition conditions on thin film quality was studied and a set of typical processing parameters were obtained, which would direct the RTCVD processing of thin film silicon solar cell technique.

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Skatkov, Leonid, Valeriy Gomozov, Gennadiy Tulskiy, Svetlana Deribo, and Alena Tulskaya. "Electrode Processes in Electrochromic Anodic Oxide Films on Niobium." JOURNAL OF ADVANCES IN CHEMISTRY 15, no. 1 (2018): 6070–71. http://dx.doi.org/10.24297/jac.v15i1.6828.

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We review the following issues: peculiarities of polycrystalline AOP development at niobium in nitrate salt melt at temperatures of Nb2O5 recrystallization, the mechanisms of change in structure and properties of niobium pentoxide in the result of electrode processes under cathodic polarization (at the model structure of polycrystalline film), as well as the methods of amorphous electrochromic AOP development and ways of electrochromic processes optimization at such films.

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Hameed Athab, Rana, and Bushra H. Hussein. "Growth and Characterization of Vacuum Annealing AgCuInSe2 Thin Film." Ibn AL-Haitham Journal For Pure and Applied Sciences 35, no. 4 (2022): 45–54. http://dx.doi.org/10.30526/35.4.2868.

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The influence of annealing on quaternary compound Ag0.9Cu0.1InSe2 (ACIS) thin film is considered a striking semiconductor for second-generation solar cells. The film deposited by thermal evaporation with a thickness of about 700 nm at R.T and vacuum annealing at temperatures (373,473) K for 1 hour. It was deposited in a vacuum of 4.5*10-5 Torr on a glass substrate. From XRD and AFM analysis, it is evident that Ag0.9Cu0.1InSe2 films are polycrystalline in nature, having ideal stoichiometric composition. Structural analysis indicated that annealing the films following the deposition resulted in

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Ginting, M., and J. D. Leslie. "Preparation and electrical properties of heterojunctions of ZnO on Zn3P2 and CdTe." Canadian Journal of Physics 67, no. 4 (1989): 448–55. http://dx.doi.org/10.1139/p89-080.

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"Heterojunctions" have been fabricated by the reactive evaporation of thin film n-type ZnO onto p-type single crystal Zn3P2, polycrystalline films of Zn3P2, and single crystal CdTe. The photovoltaic response of the n-ZnO – single crystal p-CdTe devices was good, that of the n-ZnO – single crystal p-Zn3P2 devices was poor, and that of the n-ZnO – p-Zn3P2 polycrystalline film devices was nonexistent. The ideality factor n of all devices studied was greater than two. On the basis of 1/C2 vs. V results, the n-ZnO – single crystal p-Zn3P2 devices behaved most like Schottky barrier devices, whereas

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Hao, Jian, Deepu J. Babu, Qi Liu, et al. "Synthesis of high-performance polycrystalline metal–organic framework membranes at room temperature in a few minutes." Journal of Materials Chemistry A 8, no. 16 (2020): 7633–40. http://dx.doi.org/10.1039/c9ta12027k.

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Eitan Barlaz, D., and Edmund G. Seebauer. "Manipulation of carrier concentration, crystallite size and density in polycrystalline anatase TiO2via amorphous-phase medium range atomic order." CrystEngComm 17, no. 10 (2015): 2101–9. http://dx.doi.org/10.1039/c5ce00048c.

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Deposition temperature and other growth conditions affect carrier concentration and other properties of thin-film polycrystalline anatase, yielding evidence for medium range atomic order in the initially amorphous films.

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Freitas, J. A., J. E. Butler, and U. Strom. "Photoluminescence studies of polycrystalline diamond films." Journal of Materials Research 5, no. 11 (1990): 2502–6. http://dx.doi.org/10.1557/jmr.1990.2502.

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The photoluminescence spectra of polycrystalline diamond films prepared by filament assisted chemical vapor deposition are dominated by a defect band with a strong zero phonon line near 1.68 eV and weak phonon replicas at lower energies. The 1.68 eV line is blucshifted from the 1.675 eV zero phonon line associated with the neutral vacancy in bulk diamond. The line shape and position of the 1.68 eV line are shown to depend on substrate material (Si, Mo, Ni). The 1.68 eV emission for Ni and Mo substrates is interpreted in terms of the stress shifted and broadened neutral vacancy emission. The br

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