Relevant bibliographies by topics / Pre amorphization

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  1. Journal articles
  2. Dissertations / Theses
  3. Conference papers

Academic literature on the topic 'Pre amorphization'

Author: Grafiati
Published: 25 May 2024
Last updated: 31 July 2025

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Journal articles on the topic "Pre amorphization"

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Yunin, P. A., M. N. Drozdov, A. V. Novikov, et al. "Complex Diagnostics of Silicon-on-Insulator Layers after Ion Implantation and Annealing." Поверхность. Рентгеновские, синхротронные и нейтронные исследования, no. 5 (September 22, 2024): 61–68. http://dx.doi.org/10.31857/s1028096024050094.

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A technology was developed for activating ion-implanted dopants in silicon-on-insulator layers at a low annealing temperature (600°C) using the pre-amorphization technique of a silicon device layer. In the case of phosphorus implantation, silicon was amorphized directly by dopant ions. In the case of boron implantation for pre-amorphization, the layers were preliminary irradiated with argon or fluorine ions. Complex diagnostics of the implanted layers was carried out using secondary ion mass spectrometry, X-ray diffractometry and small-angle X-ray reflectometry. The combination of methods made
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Andrzejewski, M., N. Casati, and A. Katrusiak. "Reversible pressure pre-amorphization of a piezochromic metal–organic framework." Dalton Transactions 46, no. 43 (2017): 14795–803. http://dx.doi.org/10.1039/c7dt02511d.

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Wen, D. S., J. Liu, C. M. Osburn, and J. J. Wortman. "Interface Traps Caused by Ge Pre‐Amorphization." Journal of The Electrochemical Society 132, no. 10 (1985): 2514–16. http://dx.doi.org/10.1149/1.2113613.

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Schreutelkamp, R. J., J. S. Custer, J. R. Liefting, W. X. Lu, and F. W. Saris. "Pre-amorphization damage in ion-implanted silicon." Materials Science Reports 6, no. 7-8 (1991): 275–366. http://dx.doi.org/10.1016/0920-2307(91)90001-4.

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Cellini, C., A. Carnera, M. Berti, et al. "Pre-amorphization damage study in as-implanted silicon." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 96, no. 1-2 (1995): 227–31. http://dx.doi.org/10.1016/0168-583x(94)00488-9.

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Hempel, Nele-Johanna, Matthias M. Knopp, Ragna Berthelsen, and Korbinian Löbmann. "Convection-Induced vs. Microwave Radiation-Induced in situ Drug Amorphization." Molecules 25, no. 5 (2020): 1068. http://dx.doi.org/10.3390/molecules25051068.

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The aim of the study was to investigate the suitability of a convection oven to induce in situ amorphization. The study was conducted using microwave radiation-induced in situ amorphization as reference, as it has recently been shown to enable the preparation of a fully (100%) amorphous solid dispersion of celecoxib (CCX) in polyvinylpyrrolidone (PVP) after 10 min of continuous microwaving. For comparison, the experimental setup of the microwave-induced method was mimicked for the convection-induced method. Compacts containing crystalline CCX and PVP were prepared and either pre-conditioned at
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Murakami, Y., I. Tsunoda, H. Kido та ін. "Enhanced solid-phase growth of β-FeSi2 by pre-amorphization". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 206 (травень 2003): 304–7. http://dx.doi.org/10.1016/s0168-583x(03)00750-x.

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Azarov, A. Yu, A. I. Titov, and S. O. Kucheyev. "Effect of pre-existing disorder on surface amorphization in GaN." Journal of Applied Physics 108, no. 3 (2010): 033505. http://dx.doi.org/10.1063/1.3462380.

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Li, Hong-Jyh, Peter Zeitzoff, Larry Larson, and Sanjay Banerjee. "B diffusion in Si with pre-amorphization of different species." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 22, no. 5 (2004): 2380. http://dx.doi.org/10.1116/1.1795250.

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Delwail, C., S. Joblot, F. Mazen, et al. "Impact of the pre amorphization by Ge implantation on Ni0.9Pt0.1 silicide." Microelectronic Engineering 254 (February 2022): 111705. http://dx.doi.org/10.1016/j.mee.2021.111705.

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Dissertations / Theses on the topic "Pre amorphization"

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Delwail, Clara. "Etude de l'impact de la pré-amorphisation par implantation ionique pour l'optimisation des contacts siliciurés." Electronic Thesis or Diss., Aix-Marseille, 2022. http://theses.univ-amu.fr.lama.univ-amu.fr/220601_DELWAIL_838bz740xvto337mo443f_TH.pdf.

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Le siliciure de Ni(10%Pt) est utilisé pour former les contacts des transistors MOS des nœuds technologiques avancés. Le siliciure de Ni(10%Pt) présente de nombreux avantages, cependant, les stabilités morphologique et thermique de la phase NiSi(Pt) posent des problèmes pour la fiabilité des composants. De plus, une diminution de la résistivité du siliciure est requise pour améliorer les performances électriques. Dans ce travail, l’influence de la PAI Ge sur la siliciuration et sur les propriétés du NiSi(Pt) est étudiée. Les conditions d’implantation ont été choisies pour faire varier la positi
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Lin, Yu-Chang, and 林裕章. "Shallow Junction Doping Formation on PMOSFET by Germanium Pre-Amorphization Implantation." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/49791559263956147738.

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碩士<br>長庚大學<br>電子工程研究所<br>94<br>The main challenges for PMOSFET shallow junction formation remains the worst short channel effect (SCE) and high sheet resistance of source / drain. Ion implantation is the commonly used and best controlled technique in complementary metal-oxide-semiconductor (CMOS) technology to dope the source/drain extension (SDE) region of the device. It has been demonstrated that a method of forming low sheet resistance, shallow P+ junctions for improved PMOSFET short-channel performance on fabricated products. Shallow Si1-xGex self-aligned to the gate electrode is form by G
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Lee, Chao-Chung, and 李肇中. "Schottky Barrier Height Tuning of NiSi Using Yb Interlayer With Pre-Amorphization Implantation." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/78910484661778617482.

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碩士<br>國立交通大學<br>電子研究所<br>99<br>The metal silicide source/drain (S/D) Schottky barrier (SB) MOSFETs are considered one of the most promising candidates for sub-22nm devices because of small series resistance of S/D, easy processing, low thermal budget, and excellent short channel effect immunity. However, SB MOSFETs usually suffer from a large leakage current at the drain in the off state and poor saturation drive current due to undesired high SB height (SBH). Ni silicide is the most promising silicide material because it has greater advantages than Ti silicide and Co silicide. Owing to the Fer
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Chen, Chin Yu, and 陳慶育. "Improvement of Contact Resistance and Leakage Current for FinFETs by Adopting Ge Pre-Amorphization Implantation." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/92197321391993049667.

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Conference papers on the topic "Pre amorphization"

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Aneesh, Mathew, Adukkadukkam Dineshan, and Lee King Suen. "Study of Pre-Amorphization Implant Species Impact on PNP Performance." In 2025 36th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC). IEEE, 2025. https://doi.org/10.1109/asmc64512.2025.11010373.

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Liu, Chang, Xu Chen, Jinbiao Liu, et al. "Reduction of Specific Contact Resistivity by Employing Pre-Amorphization Implantation and In-Situ Steam Generation Oxidation." In 2024 IEEE 17th International Conference on Solid-State & Integrated Circuit Technology (ICSICT). IEEE, 2024. https://doi.org/10.1109/icsict62049.2024.10831274.

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Johnson, Gregory M., Cheryl Hartfield, Andreas Rummel, Heiko Stegmann, and Lorenz Lechner. "Consideration of a Ga-FIB in Lamella Sample Prep for EBIC/EBAC Analysis of Advanced-Node SRAMs." In ISTFA 2024. ASM International, 2024. http://dx.doi.org/10.31399/asm.cp.istfa2024p0478.

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Abstract The effects of sample prep with a Ga+-ion Focused Ion Beam (Ga-FIB) on measurements of electron beam induced current (EBIC) were studied. Concerns have been occasionally raised about amorphization from the beam, or even Ga+ implantation ruining the ability to make useful measurements for purposes of either failure analysis or device tailoring. To understand the magnitude of any deleterious effects, two different lamellae from a 5 nm SRAM sample were prepared with different areas of increasingly improved polish, as indicated by decreasing, cumulative, FIB beam energy, followed by EBIC
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Chen, Pin Hong, Chia Chang Hsu, Jerander Lai, et al. "Investigation pre-amorphization implantation on nickel silicide formation." In 2014 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC). IEEE, 2014. http://dx.doi.org/10.1109/iitc.2014.6831887.

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Surdeanu, Radu, Bartek J. Pawlak, Richard Lindsay, et al. "Pre-amorphization and co-implantation suitability for advanced PMOS devices integration." In 2003 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2003. http://dx.doi.org/10.7567/ssdm.2003.b-8-2.

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Park, Soon-Yeol, Bum-Goo Cho, and Taeyoung Won. "Atomistic modeling on carbon co-implant with silicon pre-amorphization implant technique." In 2008 IEEE Silicon Nanoelectronics Workshop (SNW). IEEE, 2008. http://dx.doi.org/10.1109/snw.2008.5418405.

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Xu, Peng, Xiangbiao Zhou, Na Zhao, Dan Zhao, and Dongping Wu. "Formation of ultra-shallow junctions with pre-amorphization implant and microwave annealing." In 2013 13th International Workshop on Junction Technology (IWJT). IEEE, 2013. http://dx.doi.org/10.1109/iwjt.2013.6644513.

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Yoshifumi Nishi, Yoshinori Tsuchiya, Atsuhiro Kinoshita, Akira Hokazono, and Junji Koga. "Successful enhancement of metal segregation at NiSi/Si junction through pre-amorphization technique." In 2008 Symposium on VLSI Technology. IEEE, 2008. http://dx.doi.org/10.1109/vlsit.2008.4588615.

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Yu, H., M. Schaekers, A. Hikavyy, et al. "Ultralow-resistivity CMOS contact scheme with pre-contact amorphization plus Ti (germano-)silicidation." In 2016 IEEE Symposium on VLSI Technology. IEEE, 2016. http://dx.doi.org/10.1109/vlsit.2016.7573381.

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Hsiao, T. C., P. Liu, and J. C. S. Woo. "A novel salicide technology for thin film SOI MOSFETs using Ge pre-amorphization." In 1996 IEEE International SOI Conference Proceedings. IEEE, 1996. http://dx.doi.org/10.1109/soi.1996.552526.

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You might also be interested in the extended bibliographies on the topic 'Pre amorphization' for particular source types:
Journal articles
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