Relevant bibliographies by topics / Pulsed substrate bias

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  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers

Academic literature on the topic 'Pulsed substrate bias'

Author: Grafiati
Published: 28 May 2022
Last updated: 30 July 2025

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Journal articles on the topic "Pulsed substrate bias"

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Ma, D. L., Y. T. Li, Q. Y. Deng, B. Huang, Y. X. Leng, and N. Huang. "Tailoring the texture of titanium thin films deposited by high-power pulsed magnetron sputtering." International Journal of Modern Physics B 33, no. 01n03 (2019): 1940017. http://dx.doi.org/10.1142/s0217979219400174.

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Titanium (Ti) thin films with (002) or (100) texture are favored for many applications. In this paper, Ti thin films were prepared by high-power pulsed magnetron sputtering, and the texture of Ti thin films was successfully tailored by adjusting the pulse width, substrate bias and magnetic field strength. It is found that the peak power and average power of the Ti target are increased by increasing sputtering pulse width and decreasing magnetic field strength, which raise the Ti plasma flux and ion/atom ratio of Ti ions in front of the substrate simultaneously. Ti thin films with a highly (002
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Yu, Xiang, Yi Yong Yang, and Cheng Biao Wang. "Effect of Pulsed Substrate Bias on Evolution of Surface Morphology and sp3 Hybridization Degree of Ag-DLC Films in a Mid-Frequency Dual-Magnetron Sputtering." Advanced Materials Research 105-106 (April 2010): 444–47. http://dx.doi.org/10.4028/www.scientific.net/amr.105-106.444.

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In this work, we have investigated the influence of the pulsed substrate bias voltage on the evolution of the surface morphology and sp3 hybridization degree of Ag containing diamond-like carbon (Ag-DLC) films deposited by using a mid-frequency dual-magnetron sputtering system. The unipole substrate bias voltage at 0 V, -60 V, -100 V and -150 V, respectively, was employed on AISI 440 substrate with the duty ratio uniformly set at 70%. The surface morphology was observed by AFM and the hybridization degree of the DLC films was performed respectively using Raman Spectroscopy and Rockwell C inden
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Hanizam, H., Md Nizam Abd Rahman, Noraiham Mohamad, and A. R. Soufhwee. "Surface Energy and Crystallite Size Comparisons by Applying Direct Current and Pulse Direct Current on Substrate Bias in PVD Process." Applied Mechanics and Materials 315 (April 2013): 98–102. http://dx.doi.org/10.4028/www.scientific.net/amm.315.98.

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Surface morphology homogeneity and energy modifications for in situ PVD process are two critical factors to prevent unexpected adhesion failure during machining or service. Unlike during film depositing, there is still much gap to be explored on applying pulsed biasing concepts to the substrate during in situ, to ensure the substrate surface readiness prior to film coating. The purpose of this paper is to study the effects of conventional direct current (DC) and pulse direct current (PDC) applied at substrate bias to the surface energy and crystallite size. Tungsten carbide (WC) cutting tool i
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Zhang, Min, Guo Qiang Lin, Ai Min Wu, Sheng Zhi Hao, Chuang Dong, and Li Shi Wen. "Structural and Mechanical Properties of AlN Films by Pulsed Bias Arc Ion Plating." Materials Science Forum 561-565 (October 2007): 1157–60. http://dx.doi.org/10.4028/www.scientific.net/msf.561-565.1157.

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AlN thin films have been deposited on p-(100) Si and glass substrates by pulsed bias arc ion plating at different negative substrate biases. The crystal orientation, deposition rate and mechanical property of the films were investigated by X-ray diffraction, nanoindenter and UV-VIS spectrophotometer. The results reveal that pulsed bias has a large influence on film preferred orientation, deposition rate and mechanical property. A preferred (110) orientation is observed in the film deposited at a bias of -50V. With the increase of the bias, film deposition rate decreases first sharply then wild
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Guoqiang, Lin, Bai Xiao, Dong Chuang, and Wen Lishi. "Substrate temperature calculation for pulsed bias arc ion plating." Surface and Coatings Technology 194, no. 2-3 (2005): 325–29. http://dx.doi.org/10.1016/j.surfcoat.2004.07.074.

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Li, Ming Sheng, Yong Zhong Fan, Shu Juan Zhang, and Chang Jie Feng. "Structure and Property of CrAlN Coatings Prepared by Bipolar Pulsed Dual Magnetron Sputtering (BPDMS) under Different Pulse Bias Voltage." Advanced Materials Research 189-193 (February 2011): 668–71. http://dx.doi.org/10.4028/www.scientific.net/amr.189-193.668.

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Recently, Cr-Al-N coatings have received more and more attention of researchers owing to its standing-out mechanical performances and superior chemical stability. In this present work, CrAlN ternary coatings were deposited by a bipolar pulsed dual magnetron sputtering (BPDMS) method and the effects of substrate negative bias on deposition rate, structure, hardness and adhesion of the coatings were investigated. The application of appropriate negative substrate bias voltage leads to dense structure, high hardness and excellent adhesion for CrAlN coatings.
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Dai, Hai Yang, Feng Xiao Zhai, Xue Rui Cheng, Lei Su, and Zhen Ping Chen. "Effects of Substrate Bias on the Microstructure and Properties of a-C:H Films Deposited by MFPUMST." Advanced Materials Research 476-478 (February 2012): 2344–47. http://dx.doi.org/10.4028/www.scientific.net/amr.476-478.2344.

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Hydrogenated amorphous carbon (a-C:H) films on silicon wafers were prepared by middle frequency pulsed unbalanced magnetron sputtering technique (MFPUMST) at different substrate bias under the acetylene-argon mixed gases. These films were characterized with Raman spectroscopy, atomic force microscopy (AFM) and nanoindentation. Raman spectra show that the sp3 fraction in a-C:H films increases with increasing substrate bias voltage from 0 to 100 V, and then decreases when the substrate bias above 100 V. AFM and nanoindentation results reveal that the surface roughness and nano-hardness of the fi
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RUKKUN, Jariyaporn, Kamon AIEMPANAKIT, Pimchanok REAKAUKOT, Witthawat WONGPISAN, Kirati WAREE, and Montri AIEMPANAKIT. "Investigation of deposition parameters on the structural properties and hardness of TiAlN films deposited via reactive pulsed DC magnetron sputteringInvestigation of deposition parameters on structural properties and hardness of TiAlN films deposited by reactive pulsed DC magnetron sputtering." Journal of Metals, Materials and Minerals 31, no. 2 (2021): 118–22. http://dx.doi.org/10.55713/jmmm.v31i2.1083.

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In this work, titanium aluminum nitride (TiAlN) films were deposited on a silicon substrate via reactive pulsed DC magnetron sputtering. The effect of deposition parameters such as nitrogen gas flow rate, substrate temperature, and bias voltage on the structural and mechanical properties of TiAlN films was investigated. The crystal structure, morphology, and hardness of TiAlN films were characterized via X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM, and nanoindentation. An improved crystallinity of TiAlN films was obtained by varying the substrate temperature an
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Jiang, Hui, Hai Yang Dai, and Ning Kang Huang. "Effects of Bias on the Bonding Structure and Mechanical Property of a-C:H Films Deposited by MFPUMST." Advanced Materials Research 507 (April 2012): 38–43. http://dx.doi.org/10.4028/www.scientific.net/amr.507.38.

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Hydrogenated amorphous carbon (a-C:H) films on silicon wafers were prepared by middle frequency pulsed unbalanced magnetron sputtering technique (MFPUMST) at different substrate bias under the methane-argon mixed gases. Raman spectra show that the sp3 fraction in a-C:H films increases with increasing substrate bias voltage from 0 to 100 V, and then decreases when the substrate bias above 100 V. Nano-hardness for these films prepared under different substrate bias voltage show that nano-hardness increase with increasing substrate bias voltage from 0 to 100 V, and then decrease from 100 up to 20
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Zhang, Shu Juan, Ming Sheng Li, Zhi Qin Chen, and Yong Zhong Fan. "Effects of Pulsed Negative Bias and Current Density on Properties of N-Doped TiO2 Films Deposited by Arc Ion Plating." Advanced Materials Research 476-478 (February 2012): 2357–62. http://dx.doi.org/10.4028/www.scientific.net/amr.476-478.2357.

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The N-doped TiO2thin films of different pulsed negative bias and different current density were deposited on medical glass slide by arc ion plating. The influence of pulsed substrate bias and arc current on film properties was investigated by varying pulsed negative biases from 0 V to−600V and arc current from 40A to 60A. Film structure, surface morphologies and optical properties were measured with XRD, SEM and UV-VIS transmittance spectroscope. Photo-catalytic performance of the films was evaluated by degrading methyl orange. The results show that the N-doped TiO2films absorption edge succes
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Dissertations / Theses on the topic "Pulsed substrate bias"

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Vasyliev, V. V., A. A. Luchaninov, E. N. Reshetnyak, and V. E. Strelnitskij. "Comparative Characteristics of Stress and Structure of TiN and Ti0.5-xAl0.5YxN Coatings Prepared by Filtered Vacuum-Arc PIIID Method." Thesis, Sumy State University, 2012. http://essuir.sumdu.edu.ua/handle/123456789/34913.

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A comparative study of the structure and stress state of Ti0.5-xAl0.5YxN and TiN coatings deposited under identical conditions from the filtered vacuum-arc plasma under high voltage pulsed bias potential on the substrate was carried out. It was found that for Ti0.5Al0.5N coatings the dependence of the residual stress on the amplitude of the pulsed voltage potential is non-monotonic with a minimum when the amplitude is of 1 kV. As for TiN films, a monotonic decrease in the level of residual stresses takes place when the amplitude of the potential is increased in the range 0-2.5 kV. Non-mon
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Akkaya, S. S., V. V. Vasyliev, K. Kazmanl, et al. "Mechanical and Tribological Properties of TiN Coatings Produced by PIII&D Technique." Thesis, Sumy State University, 2013. http://essuir.sumdu.edu.ua/handle/123456789/35187.

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The structure, mechanical and tribological properties TiN coatings рroduced with PIII&D by using rectilinear filtered vacuum arc plasma system are present. The results of scratch testing and wear reciprocating testing clearly revealed the positive effect of pulse bias (0.5÷2.5 kV) application on tribological behavior of the TiN coatings in comparison the coatings deposited with DC bias (150 V). Application of pulsed bias potential leads to a significant reduction in the friction coefficient and increasing of coatings wear resistance due to a change in their structure. The orientation of c
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Book chapters on the topic "Pulsed substrate bias"

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Barnat, Edward V., and Toh-Ming Lu. "Applications of a Pulsed Waveform to a Substrate: Pulsed Bias Sputtering." In Pulsed and Pulsed Bias Sputtering. Springer US, 2003. http://dx.doi.org/10.1007/978-1-4615-0411-5_8.

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Pinchuk, Nataliia, and Oleksandr Terletskyi. "NANOSTRUCTURED COATINGS ZRN, OBTAINED BY VACUUM-ARC DEPOSITION METHOD." In Modernization of research area: national prospects and European practices. Publishing House “Baltija Publishing”, 2022. http://dx.doi.org/10.30525/978-9934-26-221-0-1.

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Nowadays increased interest is shown in ZrN coatings, which have high erosion resistance, strength in combination with a fairly high hardness. Among the various ion-plasma techniques, vacuum-arc is one of the most versa-tile processes due to the high degree of ionization of the flow of film-forming particles and good adhesion properties of coatings to the substrate. The purpose of the paper is problem of structural engineering of vacuum-arc ZrN coatings is acute in order to predictably obtain the necessary functional physical and mechanical characteristics. Methodology. The study of the struct
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Conference papers on the topic "Pulsed substrate bias"

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Li, De-Jun, Murat U. Guruz, and Yip-Wah Chung. "Ultrathin CNx Overcoats for 1 Tb/in2 Hard Disk Drive Systems." In STLE/ASME 2001 International Joint Tribology Conference. American Society of Mechanical Engineers, 2001. http://dx.doi.org/10.1115/trib-nano2001-108.

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Abstract Carbon nitride films were grown on silicon and hard disk substrates using pulsed dc magnetron sputtering in a single cathode deposition system. Substrates were mounted on a specially designed rotating holder that allowed 45° tilt angle and substrate rotation about the surface normal up to 20 rpm. AFM scans over 10×10 μm2 showed that 50 nm thick CNx films prepared under optimum substrate bias conditions have r.m.s. surface roughness almost four times lower than those prepared without substrate tilt and rotation. We observed a two-fold reduction in corrosion damage for hard disk substra
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Beaudoin, Félix, Philippe Perdu, Romain Desplats, et al. "Laser Beam Based ESD Defect Localization in ICs." In ISTFA 2002. ASM International, 2002. http://dx.doi.org/10.31399/asm.cp.istfa2002p0543.

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Abstract The application of laser beam based techniques for ESD defect localization in silicon and gallium arsenide integrated circuits is studied. The Thermal Laser Stimulation technique (OBIRCH, TIVA) is shown to precisely localize electrostatic discharge (ESD) defects under low voltage and current consumption, thus avoiding device or defect degradation upon testing. It is also shown that nonbiased Thermal Laser Stimulation (SEI) tests can localize ESD defects in the silicon substrate. Physical analysis revealed that a thermocouple composed of molten silicon with crystalline silicon generate
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Kumar, Kitu, Onejae Sul, Yao-Tsan Tsai, et al. "Nanoscale Graphene and Carbon Nanotube Lithography Using an Atomic Force Microscope." In ASME 2009 International Mechanical Engineering Congress and Exposition. ASMEDC, 2009. http://dx.doi.org/10.1115/imece2009-10646.

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In this work, we demonstrate the use of a voltage-applied Atomic Force Microscopy (VAFM) local anodic oxidation nanolithography process to precisely fabricate small (<20 nm) structures from graphene and carbon nanotube material. These graphitic materials have exceptional electrical properties which give them a niche in emerging nanoelectronics applications requiring quantum structures. While several methods for nanoscale patterning of these materials exist, the VAFM nanolithography technique has lately been shown to address the fabrication issues of graphitic nanodevices on the order of
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Krökel, D., D. Grischkowsky, and M. B. Ketchen. "Optoelectronic Generation of 350 Femtosecond Electrical Pulses." In OSA Annual Meeting. Optica Publishing Group, 1988. http://dx.doi.org/10.1364/oam.1988.pdp24.

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We report observations of a new optoelectronic mechanism to generate 180 mV, 350 fsec electrical pulses. For this mechanism to operate the laser excitation beam should be focused to a spot smaller than the separation between the two lines of a charged coplanar transmission line fabricated on an unimplanted silicon-on-sapphire (SOS) substrate, and should be positioned between the two lines partially illuminating the back side of the positive line. When these conditions were satisfied, we always observed a strong short pulse followed by a much weaker step function. For positive bias the signal s
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Wu, Ting-Hsiang, Fan Xiao, Michael A. Teitell, and Pei-Yu Chiou. "Molecular delivery into live cells using gold nanoparticle coated substrates fabricated by pulsed laser annealing." In BiOS, edited by E. Duco Jansen and Robert J. Thomas. SPIE, 2010. http://dx.doi.org/10.1117/12.840732.

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Connolly, K. M., R. O. Grondin, S. M. El-Ghazaly, and R. P. Joshi. "Modeling of An Electro-Optically Probed Photoconductive Switching Experiment." In Picosecond Electronics and Optoelectronics. Optica Publishing Group, 1991. http://dx.doi.org/10.1364/peo.1991.fb3.

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Photoconductive switching and electro-optic sampling provide a basis for generating and measuring electrical waveforms with subpicosecond risetimes [1]. The simplest structure, shown in Fig. 1, consists of a photoconductive switch and coplanar microstrip fabricated on a GaAs substrate. The switch is turned on by illuminating the gap with a laser pulse to generate electron-hole pairs. The electrons and holes then move according to the fields created by the bias voltage applied to one side of the gap, and induce a propagating wave on the microstrip structure.
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Kim, Kwangsu, Yonghyun Cho, Youngjin Kim, and Taesung Kim. "Generation of SI Nanoparticles Using Plasma Technology for Novel Device and Energy Storage Application." In ASME 2007 International Mechanical Engineering Congress and Exposition. ASMEDC, 2007. http://dx.doi.org/10.1115/imece2007-41800.

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Silicon nanoparticles are widely studied as a building block for various applications. M. L. Ostraat et al.[1] and S. Koliopoulou et al.[2] studied NFGM (nano floating gate memory), and S. Oda[3] studied electron characteristics of Si nanoparticles. H. Shirai et al.[4] studied optical characteristics of crystalline silicon nanoparticles. In addition, silicon nanoparticles can be applied for energy devices such as 2nd generation battery. In this paper, we investigated the generation of Si nanoparticles using pulse plasma technology. An inductively-coupled plasma chamber with RF power (13.56 MHz
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Huang, X. R., A. N. Cartwright, D. S. McCallum, et al. "Nonlinear Optical Response of Piezoelectric Multiple Quantum Wells Under Bias." In Quantum Optoelectronics. Optica Publishing Group, 1995. http://dx.doi.org/10.1364/qo.1995.qthe8.

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Strained multiple quantum wells (MQWs) that are grown on [111]-oriented substrates have huge intrinsic piezoelectric fields along the growth directions and are attractive for a number of novel nonlinear optical, electronic and electro-optical device applications (e.g. blue shifting SEEDs1). Unfortunately, until recently, very little was known about the nonlinear properties of these piezoelectric MQWs. The existence2 of piezoelectric fields in strained [111]-oriented InGaAs/GaAs QWs and the screening3 of these fields by photoexcited carriers had been demonstrated. In addition, the nonlinear res
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Lawson, C. M., R. R. Michael, and G. W. Euliss. "Nanosecond transmission to total internal reflection switching/limiting via laser-induced cavitation in carbon suspensions." In OSA Annual Meeting. Optica Publishing Group, 1991. http://dx.doi.org/10.1364/oam.1991.thmm47.

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We have experimentally demonstrated nanosecond transmission to total internal reflection (TIR) switching and optical limiting resulting from laser induced cavitation in films of carbon microparticles suspended in ethanol. The films are bounded by two glass windows separated by mylar spacers. Laser-induced cavitation occurs when the fraction of the incident energy absorbed by a carbon particle is sufficient to heat up and vaporize a small volume of the surrounding liquid. These small vapor bubbles coalesce to form larger vapor bubbles. Total internal reflection switching/limiting occurs at the
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Li, Ri, Rajdeep Sharma, and Mehmet Arik. "Energy Conversion Efficiency of Synthetic Jets." In ASME 2011 Pacific Rim Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Systems. ASMEDC, 2011. http://dx.doi.org/10.1115/ipack2011-52034.

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Synthetic jets are driven by a periodic electrical signal to generate pulsated airflow that can provide cooling to a hot surface. The working principle of synthetic jets involves conversion of electrical energy into mechanical and fluid energy. Piezoelectric actuators, comprising of a thin metal substrate bonded to a piezoelectric disk are induced to undergo vibration motion in bending mode by an AC sine-wave voltage with zero bias. Synthetic jets, which consist of two piezoelectric actuators separated by a compliant ring at the outer periphery of the actuators, undergo a bellow-like action du
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