Relevant bibliographies by topics / Rectifying contacts

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers

Academic literature on the topic 'Rectifying contacts'

Author: Grafiati
Published: 3 June 2025
Last updated: 31 July 2025

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Journal articles on the topic "Rectifying contacts"

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Prakash, Om, K. N. Muralidhara, and K. Ravindra. "Rectifying Contacts on CdSe Films." IETE Technical Review 7, no. 4 (1990): 260–63. http://dx.doi.org/10.1080/02564602.1990.11438651.

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Saxena, Ashok K. "Metal Semiconductor Contacts: Ohmic and Rectifying." IETE Journal of Education 26, no. 1 (1985): 3–14. http://dx.doi.org/10.1080/09747338.1985.11436034.

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Gustafsson, G., O. Inganäs, M. Sundberg, and C. Svensson. "Rectifying metal/poly(3-hexylthiophene) contacts." Synthetic Metals 41, no. 1-2 (1991): 499–502. http://dx.doi.org/10.1016/0379-6779(91)91117-s.

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Humphreys, T. P., J. D. Hunn, B. K. Patnaik, N. R. Parikh, D. M. Malta, and K. Das. "Silicon carbide/diamond heterostructure rectifying contacts." Electronics Letters 29, no. 15 (1993): 1332. http://dx.doi.org/10.1049/el:19930893.

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Khanna, Rohit, S. J. Pearton, F. Ren, I. Kravchenko, C. J. Kao, and G. C. Chi. "W2B-based rectifying contacts to n-GaN." Applied Physics Letters 87, no. 5 (2005): 052110. http://dx.doi.org/10.1063/1.2007865.

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Zhang, L. C. "Refractory metal nitride rectifying contacts on GaAs." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 5, no. 6 (1987): 1716. http://dx.doi.org/10.1116/1.583653.

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Muztoba, Md, and Mukti Rana. "Rectifying and Schottky characteristics of a-SixGe1−xOy with metal contacts." Canadian Journal of Physics 92, no. 7/8 (2014): 606–10. http://dx.doi.org/10.1139/cjp-2013-0614.

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Metal–semiconductor contacts are a vital part of semiconductor devices as they can form a Schottky barrier or an Ohmic contact. The nature of the contact plays an important role in determining the electrical and physical characteristics of the device and hence is of paramount importance in the operation of the device. In the current work we report the design, fabrication, and current–voltage (I-V) characteristics of microbolometers, a type of infrared detector where the change in temperature changes the resistance of the sensing layer. Eight different types of microbolometers were fabricated u
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Ma, G.-H. M., N. D. Evans, T. Tachibana, R. E. Clausing, and J. T. Glass. "Annealing effects on the microstructure of titanium electrical contacts on diamond films." Proceedings, annual meeting, Electron Microscopy Society of America 49 (August 1991): 740–41. http://dx.doi.org/10.1017/s0424820100088014.

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With its large band gap and a unique combination of many excellent properties, diamond is regarded as an excellent candidate for making electronic devices for operation at high temperature. In order to fabricate diamond devices, suitable electrical contacts and appropriate deposition techniques must be developed. Titanium is considered a suitable candidate material for diamond electrical contacts based on its properties. Recent current-voltage (I-V) measurements showed that as-deposited titanium contacts on boron-doped semiconducting diamond are rectifying in nature. However, upon post-deposit
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ROCCAFORTE, FABRIZIO, FRANCESCO LA VIA, and VITO RAINERI. "OHMIC CONTACTS TO SIC." International Journal of High Speed Electronics and Systems 15, no. 04 (2005): 781–820. http://dx.doi.org/10.1142/s0129156405003429.

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In this chapter, the most significant results obtained in the last decade in the field of ohmic contacts to SiC are reviewed. First, the basic concepts related to the physics of ohmic contacts and to the contact resistance measurement techniques are briefly reported. Then, some aspects concerning the formation of low resistance (10-5-10-6 Ω cm 2) ohmic contacts on n-type and for p-type SiC are discussed, focusing on Ni -based and Al/Ti -based contacts. Examples of innovative applications on practical devices are also reported, as the simultaneous formation of ohmic contacts on n- and p-type Si
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Sundberg, M., G. Gustafsson, and O. Inganäs. "Rectifying metal‐polymer contacts formed by melt processing." Applied Physics Letters 57, no. 7 (1990): 733–34. http://dx.doi.org/10.1063/1.103602.

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Dissertations / Theses on the topic "Rectifying contacts"

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Lajn, Alexander. "Transparent rectifying contacts on wide-band gap oxide semiconductors." Doctoral thesis, Universitätsbibliothek Leipzig, 2013. http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-102799.

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Die vorliegenden Arbeit befasst sich mit der Herstellung und Charakterisierung von transparenten Metall-Halbleiter- Feldeffekttransistoren. Dazu werden im ersten Kapitel transparente gleichrichtende Kontakte, basierend auf dem Konzept von Metalloxidkontakten, hergestellt und im Hinblick auf chemische Zusammensetzung des Kontaktmaterials, Barriereninhomogenität und Kompatibilität mit amorphen Halbleitern untersucht. Außerdem wird die Anwendbarkeit der Kontakte als UV-Sensor studiert. Im zweiten Kapitel werden transparente leitfähige Oxide vorgestellt und insbesondere deren optische und
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Salehi, Alireza. "Radiation and thermal treatment of indium tin oxide (ITO) films and rectifying contacts." Thesis, Cardiff University, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.388426.

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Lajn, Alexander [Verfasser], Marius [Akademischer Betreuer] Grundmann, Marius [Gutachter] Grundmann, and Thomas [Gutachter] Riedl. "Transparent rectifying contacts on wide-band gap oxide semiconductors / Alexander Lajn ; Gutachter: Marius Grundmann, Thomas Riedl ; Betreuer: Marius Grundmann." Leipzig : Universitätsbibliothek Leipzig, 2013. http://d-nb.info/1238242154/34.

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Tracy, Kieran M. "Deposition and Electrical, Chemical and Microstructural Characterization of the Interface Formed between Pt, Au and Ag Rectifying Contacts and Cleaned n-type GaN (0001) Surfaces." NCSU, 2000. http://www.lib.ncsu.edu/theses/available/etd-20000927-135628.

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<p>The characteristics of clean n-type GaN surfaces and the interface between this surface and Pt, Au and Ag, have been investigated. Gallium-terminated (0001) surfaces of GaN, free of carbon and oxygen within the detection limits of XPS have been achieved by annealing in ammonia at 860°C for 15 minutes. Additional, in-situ surface analysis indicated a flat, stoichometric, and unreconstructed surface free of other contaminants. The electron affinity of this surface was 3.1 ± 0.2 eV. The valence band maximum was located 3.0 ± 0.1 eV below the Fermi level, indicating the presence of a surface st
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Gu, Qilin. "Hydrogen peroxide treatment induced rectifying behavior of Au/n-ZnO contact." Click to view the E-thesis via HKUTO, 2008. http://sunzi.lib.hku.hk/HKUTO/record/B39558344.

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顧啟琳 and Qilin Gu. "Hydrogen peroxide treatment induced rectifying behavior of Au/n-ZnO contact." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2008. http://hub.hku.hk/bib/B39558344.

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Lajn, Alexander. "Transparent rectifying contacts on wide-band gap oxide semiconductors." Doctoral thesis, 2012. https://ul.qucosa.de/id/qucosa%3A11820.

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Die vorliegenden Arbeit befasst sich mit der Herstellung und Charakterisierung von transparenten Metall-Halbleiter- Feldeffekttransistoren. Dazu werden im ersten Kapitel transparente gleichrichtende Kontakte, basierend auf dem Konzept von Metalloxidkontakten, hergestellt und im Hinblick auf chemische Zusammensetzung des Kontaktmaterials, Barriereninhomogenität und Kompatibilität mit amorphen Halbleitern untersucht. Außerdem wird die Anwendbarkeit der Kontakte als UV-Sensor studiert. Im zweiten Kapitel werden transparente leitfähige Oxide vorgestellt und insbesondere deren optische und
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Tracy, Kieran Mark. "Deposition and electrical, chemical and microstructural characterization of the interface formed between Pt, Au and Ag rectifying contacts and cleaned n-type GaN (0001) surfaces." 2000. http://www.lib.ncsu.edu/etd/public/etd-9561327810032701/etd.pdf.

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Books on the topic "Rectifying contacts"

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Rectifying Semi-Conductor Contacts. Creative Media Partners, LLC, 2021.

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Silicon Components and Processes Self Study: Rectifying and Ohmic Contacts, Bipolar Junction Transistors. Springer, 2024.

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Book chapters on the topic "Rectifying contacts"

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El-Kareh, Badih, and Lou N. Hutter. "Rectifying and Ohmic Contacts." In Silicon Analog Components. Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-15085-3_4.

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El-Kareh, Badih, and Lou N. Hutter. "Rectifying and Ohmic Contacts." In Silicon Analog Components. Springer New York, 2015. http://dx.doi.org/10.1007/978-1-4939-2751-7_4.

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El-Kareh, Badih, and Lou N. Hutter. "Rectifying and Ohmic Contacts." In Silicon Components and Processes Self Study. Springer Nature Switzerland, 2024. http://dx.doi.org/10.1007/978-3-031-59189-1_1.

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Kanungo, Jayita, and Sukumar Basu. "Ohmic and Rectifying Contacts to Porous Silicon." In Handbook of Porous Silicon. Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-04508-5_72-1.

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Kanungo, Jayita, and Sukumar Basu. "Ohmic and Rectifying Contacts to Porous Silicon." In Handbook of Porous Silicon. Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-05744-6_72.

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Kanungo, Jayita, and Sukumar Basu. "Ohmic and Rectifying Contacts to Porous Silicon." In Handbook of Porous Silicon. Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-71381-6_72.

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Koshy, J. "Measurements of the Rectifying Barrier Height of Sputter Deposited Bi2Te3 Contacts on p-Silicon." In June 16. De Gruyter, 1985. http://dx.doi.org/10.1515/9783112497968-058.

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Brandt, Siegmund. "The Transistor (1947)." In The Harvest of a Century. Oxford University PressOxford, 1992. http://dx.doi.org/10.1093/oso/9780199544691.003.0070.

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Abstract Late in 1874 Braun , then a young science teacher at a gymnasium in Leipzig, published a paper entitled On the Conduction of Current through Sulphuric Metals [1]. In this paper, now often regarded to mark the beginning of semiconductor physics, he reports that in some crystals he found a pronounced deviation from Ohm’s law. In several cases the magnitude, not only the direction, of the current through a crystal changed if the voltage was reversed. He speaks of unipolar conductivity. In modern language, a circuit with such a behaviour is a rectifier since current flows more easily in o
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Conference papers on the topic "Rectifying contacts"

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Luckowski, E. D., T. Isaacs-Smith, and J. R. Williams. "Rectifying contacts to n-type 6H and 4H-SiC." In AIP Conference Proceedings Volume 387. ASCE, 1997. http://dx.doi.org/10.1063/1.52089.

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Kim, Woo C., Alexis R. Abramson, Scott T. Huxtable, et al. "Nanowire Arrays for Thermoelectric Devices." In ASME 2003 Heat Transfer Summer Conference. ASMEDC, 2003. http://dx.doi.org/10.1115/ht2003-47320.

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This study reports on the fabrication and characterization of two prototype thermoelectric devices constructed of either silicon (Si) or bismuth telluride (Bi2Te3) nanowire arrays. The growth mechanisms and fabrication procedures of the Si and Bi2Te3 devices are different as described in this paper. To characterize the thermoelectric device components, current-voltage (I-V) characteristics were first used to estimate their performance. For the Si device, the I-V characteristics suggest ohmic contacts at the metal-semiconductor junction. For the Bi2Te3 device, the I-V characteristics curve show
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Splith, Daniel, Anna Hassa, Peter Schlupp, Holger von Wenckstern, and Marius Grundmann. "Highly rectifying contacts on (In,Ga)2O3 thin films grown by PLD." In 2019 Compound Semiconductor Week (CSW). IEEE, 2019. http://dx.doi.org/10.1109/iciprm.2019.8819185.

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Andreev, M. Y., I. A. Lamkin, S. A. Tarasov, I. I. Mikhailov, and A. V. Solomonov. "Ohmic and rectifying contacts for ultraviolet photodiode based on AlGaN solid solutions." In 2015 IEEE NW Russia Young Researchers in Electrical and Electronic Engineering Conference (EIConRusNW). IEEE, 2015. http://dx.doi.org/10.1109/eiconrusnw.2015.7102221.

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Gupta, R. K., Ayan Bhattacharya, P. K. Kahol, and K. Ghosh. "Effect of Annealing on Rectifying Contacts on ZnO Thin Films Grown using Pulsed Laser Deposition." In 2008 MRS Fall Meetin. Materials Research Society, 2008. http://dx.doi.org/10.1557/proc-1109-b03-32.

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Hazdra, Pavel, Alexandr Laposa, Zbyněk Šobáň, et al. "Power Diode Structures Realized on (113) oriented Boron Doped Diamond." In 16th International Seminar On Power Semiconductors. Czech Technical University in Prague, 2023. http://dx.doi.org/10.14311/isps.2023.012.

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Molybdenum, ruthenium, and platinum contacts covered by the gold capping layer were used for preparation of pseudo-vertical Schottky barrier diodes on (113) oriented homoepitaxial boron-doped diamond. After metal deposition, diodes were stabilized by annealing for 20 minutes at 300 ˚C and their IV characteristics were measured at temperatures from 30 to 180 °C. Results show that all three metals can be used to realize Schottky diodes with sufficient forward and blocking capability. Moreover, molybdenum and ruthenium can also be used to create a stable ohmic contact on heavily doped contact p +
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Moto, Kenta, Kaoru Toko, Tomonari Takayama, Toshifumi Imajo, and Keisuke Yamamoto. "First Demonstration of Rectifying Schottky Contact on Polycrystalline P-Type Ge Using ZrN Electrode." In 2022 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2022. http://dx.doi.org/10.7567/ssdm.2022.e-2-05.

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Zhu, Ying-Min, Jian-Yuan Jia, Kang-Qi Fan, and Chun-Yue Huang. "Adhesive Force in Micro- and Nano-System." In 2007 First International Conference on Integration and Commercialization of Micro and Nanosystems. ASMEDC, 2007. http://dx.doi.org/10.1115/mnc2007-21203.

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One of the most important reliability problems in micro- and nano-systems is stiction, the adhesion between micro-devices due to surface forces. Although several different physical theories had been put forward to investigate the adhesion problems in micro- and nano-systems, none of them can give a continuous variation of the adhesive force with the distance (if the micro-devices contact, the distance is the negative compressive deformation) between micro-devices. After reviewing the known physical theories, three combined adhesive models are developed to provide a continuous variation of the
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Sullivan, W., C. Hettler, and J. Dickens. "Laser enhanced diffusion of nitrogen in high purity semi-insulating 4H silicon carbide substrates for non-rectifying contact formation to photoconductive semiconductor switches." In 2011 IEEE Pulsed Power Conference (PPC). IEEE, 2011. http://dx.doi.org/10.1109/ppc.2011.6191650.

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Shahsavari, S., M. B. Shafii, and M. H. Saidi. "Numerical Anaysis of a Thermopneumatic Micropump." In ASME 2010 8th International Conference on Nanochannels, Microchannels, and Minichannels collocated with 3rd Joint US-European Fluids Engineering Summer Meeting. ASMEDC, 2010. http://dx.doi.org/10.1115/fedsm-icnmm2010-30023.

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Thermopneumatic micropump is one type of positive displacement micropump, which has many applications due to its relatively large stroke volume, low working voltage, and simple fabrication in microscale. In this paper, a numerical study of heat transfer and fluid flow in a valveless thermopneumatically driven micropump is presented. For rectifying the bidirectional flow, a nozzle and a diffuser are used as the inlet and outlet channels of the chamber. Since the fluid flow is induced by the motion of a diaphragm, the numerical simulation includes fluid structure interaction, which requires appl
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