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Dissertations / Theses on the topic 'RF power amplifier'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 July 2025

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1

Lotter, Paul. "Development of feedforward RF power amplifier." Thesis, Cape Peninsula University of Technology, 2006. http://hdl.handle.net/20.500.11838/2206.

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Thesis (MTech(Electrical Engineering))--Cape Peninsula University of Technology, 2006.<br>Electronic communication systems have become an integral part of our everyday lives. RF (Radio Frequency) power amplifiers form part of the fundamental building blocks of an electronic communication system. RF power amplifiers can also be one of the major causes of distortion in an electronic communication system. This thesis describes the linearity requirement for a RF power amplifier that is used in a transmitter section of an electronic communication system. Furthermore, five different linearisat

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2

Akhtar, Siraj. "Modeling of RF power transistors for power amplifier design /." The Ohio State University, 2000. http://rave.ohiolink.edu/etdc/view?acc_num=osu1488196781733682.

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3

Boo, Hyun Ho. "New architecture for RF power amplifier linearization." Thesis, Massachusetts Institute of Technology, 2009. http://hdl.handle.net/1721.1/46605.

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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2009.<br>Includes bibliographical references (p. 51-55).<br>Power amplifier linearization has become an important part of the transmitter system as 3G and developing 4G communication standards require higher linearity than ever before. The thesis proposes two power amplifier linearization solutions : two-point architecture and adaptive digital predistortion using a [delta sigma] modulator for automatic inversion of power amplifier nonlinearity. Two-point architecture can be seen as a sol

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4

Rahkola, A. (Antti). "RF Pre-power Amplifier for LTE SoC." Master's thesis, University of Oulu, 2018. http://urn.fi/URN:NBN:fi:oulu-201806052447.

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This work focused on evaluating a single-ended complementary push-pull topology for LTE system-on-chip RF pre-power amplifier, to increase power efficiency compared to an existing class-A amplifier. Suitability of the push-pull topology was studied against strict linearity specification. Frequency range in this study was 1710–2020 MHz, and 10 dBm sine wave output power was targeted. Common source and source follower amplifier variants were designed and simulated in a schematic level. Gain control functionality was implemented by dividing the amplifier into controllable partitions. Output DC-vo

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5

Morris, Kevin Andrew. "RF power amplifier linearisation using predistortion techniques." Thesis, University of Bristol, 2000. http://hdl.handle.net/1983/02819fd3-4c63-41b7-b7b3-df70c1e4ba85.

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6

Neslen, Cody R. "Negative Conductance Load Modulation RF Power Amplifier." DigitalCommons@CalPoly, 2010. https://digitalcommons.calpoly.edu/theses/312.

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The number of mobile wireless devices on the market has increased substantially over the last decade. The frequency spectrum has become crowded due to the number of devices demanding radio traffic and new modulation schemes have been developed to accommodate the number of users. These new modulation schemes have caused very poor efficiencies in power amplifiers for wireless transmission systems due to high peak-to-average power ratios (PAPR). This thesis first presents the issue with classical power amplifiers in modern modulation systems. A brief overview of current attempts to mitigate this

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7

Yusoff, Zubaida. "The auxiliary envelope tracking RF power amplifier system." Thesis, Cardiff University, 2012. http://orca.cf.ac.uk/31368/.

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The advancement of the mobile communication industry increases the need for RF power amplifier (RFPA) to be more efficient and linear. The communication network that is shifting towards smaller micro-cell or nano-cell network has also motivated the design of the RF power amplifier to be simple, compact and cost efficient. In this research work, a novel technique for efficiency and linearity improvement of the RFPA is presented. A simplistic approach in the technique called ‘Auxiliary Envelope Tracking' (AET) system has promoted the design for small and straightforward AET tracking generator, a

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8

Torres, Chico Gabriel. "RF power amplifier linearity compensation for MRI systems." Thesis, Massachusetts Institute of Technology, 2010. http://hdl.handle.net/1721.1/62751.

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Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2010.<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references (p. 45-46).<br>In this thesis, a polar-feedback linearization system for use with MRI RF power amplifiers was designed and simulated. The design here presented is intended to replace Analogic's (located in Peabody, Massachusetts) feed-forward, digital linearization scheme. This involved the selection and testing of components meeting the stringent specifications required for a high enough level of fi

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9

Gebremicael, Kibrom Negash. "Compressive sensing based multiband RF power amplifier linearisation." Thesis, University of Bristol, 2016. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.730827.

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10

Guimarães, Gabriel Teófilo Neves. "CMOS linear RF power amplifier with fully integrated power combining transformer." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2017. http://hdl.handle.net/10183/169084.

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Este trabalho apresenta o projeto de um amplificador de potência (PA) de rádio-frequência (RF) linear em tecnologia complementar metal-oxido silício (CMOS). Nele são analisados os desafios encontrados no projeto de PAs CMOS assim como soluções encontradas no estado-da-arte. Um destes desafios apresentados pela tecnologia é a baixa tensão de alimentação e passivos com alta perda, o que limita a potência de saída e a eficiência possível de ser atingida com métodos tradicionais de projeto de PA e suas redes de transformação de impedância. Este problema é solucionado através do uso de redes de com

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11

Vasylyev, Andriy. "Integrated RF power amplifier design in silicon based technologies." [S.l.] : [s.n.], 2006. http://se6.kobv.de:8000/btu/volltexte/2006/20.

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12

Chen, Kevin Chun-Jen. "Highly efficient RF power amplifier for wireless LAN applications." Thesis, University of Bristol, 2006. http://hdl.handle.net/1983/4ded2d5b-5fb6-47c4-bc90-911cdf9a9761.

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13

Jose, Sajay. "Design of RF CMOS Power Amplifier for UWB Applications." Thesis, Virginia Tech, 2004. http://hdl.handle.net/10919/36391.

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Ever since the FCC allocated 7.5 GHz (from 3.1 GHz to 10.6 GHz) for ultra wideband (UWB) technology, interest has been renewed in both academic and industrial circles to exploit this vast spectrum for short range, high data rate wireless applications. The great potential of UWB lies in the fact that it can co-exist with the already licensed spectrum users and can still pave the way for a wide range of applications. However, this wide bandwidth complicates the circuit level implementation of key RF blocks like the power amplifier (PA), transmit/receive switch, low noise amplifier (LNA) and m

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14

King, Matthew E. "Linear Power-Efficient RF Amplifier with Partial Positive Feedback." DigitalCommons@CalPoly, 2012. https://digitalcommons.calpoly.edu/theses/811.

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Over the last decade, the number of mobile wireless devices on the market has increased substantially. New “multi-carrier” modulation schemes, such as OFDM, WCDMA, and WiMAX, have been developed to accommodate the increasing number of wireless subscribers and the demand for faster data rates within the limited commercial frequency spectrum. These complex modulation schemes create signals with high peak-to-average power ratios (PAPR), exhibiting rapid changes in the signal magnitude. To accommodate these high-PAPR signals, RF power amplifiers in mobile devices must operate under backed-off gain

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15

Sjöholm, Olof. "Integrated CMOS Doppler Radar : Power Amplifier Mixer." Thesis, Linköpings universitet, Elektroniska Kretsar och System, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-129105.

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This thesis is based on a paper by V. Issakov, presented 2009, where a circuit of a merged power amplifier mixer solution was demonstrated. This work takes that solution and simplifies it for the use at a lower frequency. The implementation target is a Doppler radar application in CMOS that can detect humans in a range of 5 to 15 meters. This could be used as a burglar alarm or an automatic light switch. The report will present the background of Issakov’s work, basic theory used and the implementation of the final design. Simulations will show that the solution presented work, with a 15 dB con

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16

Dai, Wenhua. "Large signal electro-thermal LDMOSFET modeling and the thermal memory effects in RF power amplifiers." Connect to this title online, 2004. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1078935135.

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Thesis (Ph. D.)--Ohio State University, 2004.<br>Title from first page of PDF file. Document formatted into pages; contains xix, 156 p.; also includes graphics (some col.). Includes bibliographical references (p. 152-156).

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17

Doo, Seok Joo. "New Pulsed-IV Pulsed-RF Measurement Techniques For Characterizing Power FETs For Pulsed-RF Power Amplifier Design." The Ohio State University, 2008. http://rave.ohiolink.edu/etdc/view?acc_num=osu1211981949.

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18

Acimovic, Igor. "Contributions to the Design of RF Power Amplifiers." Thesis, Université d'Ottawa / University of Ottawa, 2013. http://hdl.handle.net/10393/24406.

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In this thesis we introduce a two-way Doherty amplifier architecture with multiple feedbacks for digital predistortion based on impedance-inverting directional coupler (transcoupler). The tunable two-way Doherty amplifier with a tuned circulator-based impedance inverter is presented. Compact N-way Doherty architectures that subsume impedance inverter and offset line functionality into output matching networks are derived. Comprehensive N-way Doherty amplifier design and analysis techniques based on load-pull characterization of active devices and impedance modulation effects are developed. The

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19

An, Kyu Hwan. "CMOS RF power amplifiers for mobile wireless communications." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/31717.

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Thesis (Ph.D)--Electrical and Computer Engineering, Georgia Institute of Technology, 2010.<br>Committee Chair: Laskar, Joy; Committee Member: Cressler, John; Committee Member: Kohl, Paul; Committee Member: Kornegay, Kevin; Committee Member: Tentzeris, Emmanouil. Part of the SMARTech Electronic Thesis and Dissertation Collection.

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20

Chen, Shuyu. "rf power amplifier and oscillator design for reliability and variability." Doctoral diss., University of Central Florida, 2013. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/5616.

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CMOS RF circuit design has been an ever-lasting research field. It gained so much attention since RF circuits have high mobility and wide band efficiency, while CMOS technology has the advantage of low cost and better capability of integration. At the same time, IC circuits never stopped scaling down for the recent many decades. Reliability issues with RF circuits have become more and more severe with device scaling down: reliability effects such as gate oxide break down, hot carrier injection, negative bias temperature instability, have been amplified as the device size shrinks. Process varia

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21

Choi, Kiyong. "Parasitic-aware design and optimization of CMOS RF power amplifier /." Thesis, Connect to this title online; UW restricted, 2003. http://hdl.handle.net/1773/6078.

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22

Kim, Hyun-Woong. "CMOS RF transmitter front-end module for high-power mobile applications." Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/47592.

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With the explosive growth of the wireless market, the demand for low-cost and highly-integrated radio frequency (RF) transceiver has been increased. Keeping up with this trend, complimentary metal-oxide-semiconductor (CMOS) has been spotlighted by virtue of its superior characteristics. However, there are challenges in achieving this goal, especially designing the transmitter portion. The objective of this research is to demonstrate the feasibility of fully integrated CMOS transmitter module which includes power amplifier (PA) and transmit/receive (T/R) switch by compensating for the intrinsic

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23

Refai, Wael Yahia. "A Linear RF Power Amplifier with High Efficiency for Wireless Handsets." Diss., Virginia Tech, 2014. http://hdl.handle.net/10919/25886.

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This research presents design techniques for a linear power amplifier with high efficiency in wireless handsets. The power amplifier operates with high efficiency at the saturated output power, maintains high linearity with enhanced efficiency at back-off power levels, and covers a broadband frequency response. The amplifier is thus able to operate in multiple modes (2G/2.5G/3G/4G). The design techniques provide contributions to current research in handset power amplifiers, especially to the converged power amplifier architecture, to reduce the number of power amplifiers within the handset whi

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24

Gomes, Jorge Miguel Abrantes de Almeida. "GaN power amplifier for satellite communications." Master's thesis, Universidade de Aveiro, 2014. http://hdl.handle.net/10773/13704.

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Mestrado em Engenharia Electrónica e Telecomunicações<br>The satellite communications have become a valid alternative to conventional communications, through fiber or copper, in situations of catastrophe or even as complement to improve the quality of the services provided at a worldwide scale. Recently, radio frequency engineers have worked towards a reliable solution to replace the travelling wave tube amplifiers on board of the satellite communications. Despite the travelling wave tube amplifiers reveal a good performance, its weight, size and cost are a serious technical problem to t

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25

Jang, Haedong. "NONLINEAR EMBEDDING FOR HIGH EFFICIENCY RF POWER AMPLIFIER DESIGN AND APPLICATION TO GENERALIZED ASYMMETRIC DOHERTY AMPLIFIERS." The Ohio State University, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=osu1406269587.

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26

Gilabert, Pinal Pere Lluís. "Multi Look-Up Table Digital Predistortion for RF Power Amplifier Linearization." Doctoral thesis, Universitat Politècnica de Catalunya, 2008. http://hdl.handle.net/10803/6915.

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Aquesta Tesi Doctoral se centra en el disseny d'un nou linealitzador de Predistorsió Digital (Digital Predistortion - DPD) capaç de compensar la dinàmica i els efectes no lineals introduïts pels Amplificadors de Potència (Power Amplifiers - PAs). Un dels trets més rellevants d'aquest nou predistorsionador digital i adaptatiu consisteix en ser deduïble a partir d'un model de PA anomenat Nonlinear Auto-Regressive Moving Average (NARMA). A més, la seva arquitectura multi-LUT (multi-Taula) permet la implementació en un dispositiu Field Programmable Gate Array (FPGA).<br/><br/>La funció de predisto

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27

Book, Stefan. "1kW Class-E solid state power amplifier for cyclotron RF-source." Thesis, Uppsala universitet, FREIA, 2018. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-341693.

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This thesis discusses the design, construction and testing of a highefficiency, 100 MHz, 1 kW, Class-E solid state power amplifier. The design was performed with the aid of computer simulations using electronic design software (ADS). The amplifier was constructed around Ampleon's BLF188XR LDMOS transistor in a single ended design. The results for 100 MHz operation show a power added efficiency of 82% at 1200 W pulsed power output. For operation at 102 MHz results show a power added efficiency of 86% at 1050 W pulsed power output. Measurements of the drain- and gate voltage waveforms provide va

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28

Tang, Hong. "Educational Testbed Design For Baseband Predistortion Linearization Of Rf Power Amplifier." The Ohio State University, 2008. http://rave.ohiolink.edu/etdc/view?acc_num=osu1204578741.

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29

Tsui, Kenneth Kin Pun. "RF characterization and modeling of MOSFET power amplifier in wireless communication /." View Abstract or Full-Text, 2003. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202003%20TSUI.

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30

Autio, E. (Elina). "RF power amplifier design optimization using measurement data and statistical methods." Master's thesis, University of Oulu, 2019. http://jultika.oulu.fi/Record/nbnfioulu-201911163093.

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Abstract. Constantly growing number of mobile data users, and thus the mobile data, creates challenges for spectral efficient data transmission. A high data throughput of a base station requires linear modulation methods and broadband signals. Radio frequency (RF) power amplifier (PA) as a part of base station has an important role making the output signal of the transceiver as linear and spectral efficient as possible. The key RF parameters such as peak power, efficiency, linearity and gain suffer from productional variety which needs to be taken into account in design process. In this thesis

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31

Haapala, Linus, and Aleksander Eriksson. "RF High Power Amplifiers for FREIA – ESS : design, fabrication and measurements." Thesis, Uppsala universitet, Institutionen för fysik och astronomi, 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-263549.

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The FREIA laboratory is a Facility for REsearch Instrumentation and Acceleratior development at Uppsala University, Sweden, constructed recently to test and develop superconducting accelerating cavities and their high power RF sources. FREIA's activity target initially the European Spallation Source (ESS) requirements for testing spoke cavities and RF power stations, typically 400 kW per cavity. Different power stations will be installed at the FREIA laboratory. The first one is based on vacuum tubes and the second on a combination of solid state modules. In this context, we investigate differ

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Yahyavi, Mehran. "On the design of high-efficiency RF Doherty power amplifiers." Doctoral thesis, Universitat Politècnica de Catalunya, 2016. http://hdl.handle.net/10803/398236.

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Power amplifiers (PAs) are one of the most crucial elements in wireless standards becasue they are the most power hungry subsystems. These elements have to face an important issue, which is the power efficiency, a fact related with the output back-off (OBO). But the OBO depends on the kind of modulated signal, in proportion to the modulated signal peak-to-average power ratio (PAPR). The higuer is the data rate, the higer is the OBO, and consequently the lower is the efficiency. A low efficiency of PAs causes the waste of energy as heat. Furthermore, the trade-off between linearity and effic

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33

Ali, N. T., Abubakar S. Hussaini, Raed A. Abd-Alhameed, et al. "Explanation of DC/RF Loci for Active Patch Antennas." Springer for the ICST, 2010. http://hdl.handle.net/10454/4483.

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Yes<br>A characteristic loop locus of dc power versus RF output power was observed as the frequency was varied around the optimum point of an operational active antenna. A new technique was introduced into the simulation, plotting the dependence of parameters such as supply current, efficiency or output power on internal impedance as seen by the naked transistor. It is now clear that the loop was formed as a consequence of the interaction of the transistor packaging elements with the patch impedances.

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34

Yoon, Youngchang. "Reconfigurable CMOS RF power amplifiers for advanced mobile terminals." Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/48987.

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In recent years, tremendous growth of the wireless market can be defined through the following words: smartphone and high-data rate wireless communication. This situation gives new challenges to RF power amplifier design, which includes high-efficiency, multi-band operation, and robustness to antenna mismatch conditions. In addition to these issues, the industry and consumers demand a low-cost small-sized wireless device. A fully integrated single-chip CMOS transceiver is the best solution in terms of cost and level of integration with other functional blocks. Therefore, the effective approach

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Yousaf, Malik Muzammil. "CMOS Power Amplifier for IEEE 802.11g/n standard (2.4GHz) in 65nm process." Thesis, Linköpings universitet, Institutionen för systemteknik, 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-62172.

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Today, the mobile communication systems can be found everywhere due to thelow cost and high degree integration level which is achievable with CMOS. Theuser can use a number of applications using only one device. The transmitteris one of the main blocks in communication systems for transmitting the signal,where the RF power a mplifier (PA) amplifies the RF signal to the r equiredoutput power so that signal can reach the r eceiver. Nowadays mostly transmitteremploys such modulation schemes which have high data rate and to amplify suchsignals, a linear PA is required. The efficiency of the PA sho

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Hofvendahl, Maria. "2.4 GHz Power Amplifier with Cartesian Feedback for WLAN." Thesis, Linköping University, Department of Electrical Engineering, 2002. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-1360.

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<p>This final year project describes the linearisation method Cartesian feedback and the design of such a feedback with a 2.4GHz power amplifier. </p><p>To investigate the functionality of the Cartesian feedback ideal blocks with no current consumption were made and then gradually analog circuits were introduced into the feedback. The Cartesian feedback design consists of a subtracter, a modulator and a preamplifier in the top path and a demodulator and a filter in the feedback path. The blocks that are discussed in this report are the subtracter and the modulator unit. The circuits are design

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Ma, Rui [Verfasser]. "Reliable RF Power Amplifier Design Based on a Partitioning Design Approach / Rui Ma." Kassel : Kassel University Press, 2010. http://d-nb.info/1012130797/34.

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38

Noonan, James (James Keating). "The design of a high efficiency RF power amplifier for an MCM process." Thesis, Massachusetts Institute of Technology, 2005. http://hdl.handle.net/1721.1/32103.

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Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2005.<br>This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.<br>Includes bibliographical references (p. 91-92).<br>In this thesis, I addressed issues arising in the design of a high efficiency RF power amplifier for the Draper Laboratory multi-chip module (MCM) process. A design for a 2.3 GHz PCB amplifier using an enhancement-mode pHEMT device that achieves 68.9% PAE at 30 dBm output power

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Gao, Wei, and Kamilo Feher. "FQPSK: A BANDWIDTH AND RF POWER EFFICIENT TECHNOLOGY FOR TELEMETRY APPLICATIONS." International Foundation for Telemetering, 1997. http://hdl.handle.net/10150/609731.

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International Telemetering Conference Proceedings / October 27-30, 1997 / Riviera Hotel and Convention Center, Las Vegas, Nevada<br>A simple, low cost radio frequency (RF) power and spectrally efficient integrated transceiver/modem architecture employing Feher’s patented Quadrature Phase Shift Keying (FQPSK) is described. The FQPSK signals presented in this paper are obtained by using additional post low-pass filters in the FQPSK architecture. This implementation significantly improves the spectral efficiency of the worldwide commercially standardized Gaussian Minimum Shift Keying (GMSK) syste

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Peng, Tien-Yun, and 彭天雲. "RF Power Detector for TDMA Power Amplifier." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/98802792449659695795.

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碩士<br>中原大學<br>電子工程研究所<br>95<br>TDMA systems have been covered the whole world， e.g. the GSM850/GSM900/GSM1800/GSM1900 cellular phone network. One key task is the design of a circuitry for accurate control of transmit power. One method for RF power control in a mobile communications handset is to use a power detector to measure the RF power at the antenna during transmit and produce a voltage that corresponds to the logarithmic of the power. A gain control system may then adjust the amplifier stages to obtain optimal communication conditions. The task of this thesis was to implement a RF power

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張靖輝. "The Analysis of RF Power Amplifier." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/87766097300436476733.

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碩士<br>國立中興大學<br>電機工程學系<br>88<br>The rapid growth of wireless communication has open up the request for high power and good linearity power amplifier. However, the output power and linearity is limited by some gain compression mechanisms, such as knee voltage, pinch-off voltage, breakdown voltage and the maximum drain current. These mechanisms compress constant linear gain and then saturate output power as input power increases. The waveform clipping effects cause gain compression in MESFETs. Each gain compression mechanism has its own signature in average RF gate and drain currents.

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Tsai, Chin-Wei, and 蔡智偉. "Development of RF CMOS Power Amplifier." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/r8aca6.

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碩士<br>國立臺北科技大學<br>自動化科技研究所<br>94<br>This thesis presents the development of RF CMOS power amplifier which is implemented by UMC CMOS 0.18-um 1P6M process. A class E power amplifier and a cascode power amplifier are designed to be used in bluetooth system and wireless sensor network system, respectively. In the matching network design, the input matching network is designed for maximum gain transducer by conjugate matching and the output matching is designed for maximum power transducer by load-pull matching. The simulation results of class E power amplifier whose input matching network and out

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Wu, Ja-Dai, and 吳家岱. "RF CMOS Class-E Power Amplifier Design." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/02020170093738417342.

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碩士<br>國立交通大學<br>電子工程系所<br>95<br>An on-chip CMOS Class-E Power Amplifier (PA) implemented in 0.13-�慆 CMOS technology is presented. The Class-E PA includes a Class-F driver and replaces a large RF choke with a small finite dc-feed inductor for on-chip integration. The proposed Class-E PA achieves power added efficiency (PAE) of 48.4 % while delivering 21 dBm output power with the input driving power of -3 dBm at 2.5 GHz. In the design band, 2.3GHz~2.7GHz, PAE is still above 44%. In order to improve the simulation time of RF/Baseband co-simulation the behavior model of proposed PA is presented. T

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wu, Shih-Chien, and 吳世傑. "RF power amplifier design for WiMAX 802.16e." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/61050324281145936315.

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碩士<br>元智大學<br>通訊工程學系<br>97<br>This paper used TSMC SiGe 0.35um technologies to RF power amplifier design for WiMAX 802.16e system application. In the 3.5GHz frequency band average output power 20dBm, gain near 16dBm and joins the linearity construction to raise the overall power amplifier efficiency. Finally design the power detector to transform the power signal, this signal returns gives controls the output voltage for DC-DC IC. This design can improve the power amplifier efficiency. This paper will discuss its design way and the gauging result its characteristic and the future improves the

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Chin-Fong, Lin, and 林清風. "Study on Class E RF Power Amplifier." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/44427679986710525653.

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Oliveira, Daniel José Azevedo. "CMOS-RF power amplifier for wireless communications." Master's thesis, 2009. http://hdl.handle.net/10216/66786.

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Ko, Jing-Yao, and 柯景耀. "Design and Simulation of RF Power Amplifier." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/55437951707804957940.

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碩士<br>義守大學<br>電機工程學系碩士班<br>98<br>This thesis is focused on the basic theorem and all the circuit characteristic improvement technology of RF power amplifier design. An UHF power amplifier operated at 500MHz was implemented. By going through the process of design, simulation and sample implementation, the completely capability of RF power amplifier design was established. In the thesis, the power amplifier is operated at class AB mode and it is a two-stage structure. To improve the linearity of the amplifier, the adaptive bias circuit was introduced and the load-pull technique was applied to fi

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Oliveira, Daniel José Azevedo. "CMOS-RF power amplifier for wireless communications." Dissertação, 2009. http://hdl.handle.net/10216/66786.

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Nai, JI-Kang, and 能繼康. "Research of CMOS RF Power Amplifier with Power Efficiency Improvement." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/09750270580288803579.

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碩士<br>國立臺灣大學<br>電信工程學研究所<br>104<br>In this thesis, the theory of switchmode power amplifier (PA) is implemented in the design of CMOS RF power amplifier. The aim of the design is to improve the efficiency of power amplifier while keeping high out output power. A 5 GHz class-F-1 mode power amplifier based on transformer using the TSMC 180-nm CMOS process is presented first. In this design, the conventional output matching networks of LC-tank are replaced by the transformer with a shunt capacitor to increase the power density. The measured result shows 13.2-dB small signal gain, and 25.4-dBm sat

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Yang, Jia Bin, and 楊嘉濱. "Design of RF Power Amplifier for ISM Band." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/16214504068360191237.

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碩士<br>中華大學<br>電機工程學系碩士班<br>88<br>This thesis is dedicated to the design of the RF power amplifier used in the 2.4GHz ISM band. Compactness is the key concerns in our circuit design. By employing the IC design process, the amplifier size is greatly reduced. In addition, the IC area and the cost of this design could be lowered by minimize the number of matching devices

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