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Journal articles on the topic 'RF power amplifier'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 July 2025

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1

Elkhaldi, Said, Moustapha El Bakkali, Naima Amar Touhami, Taj-eddin Elhamadi, and Hmamou Abdelmounim. "Linearization, EM Simulation, and Realization of a 40 DBM Class-AB Gan Power Amplifier." International Journal of Electrical and Electronics Research 12, no. 4 (2024): 1418–26. https://doi.org/10.37391/ijeer.120436.

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This research article presents the comprehensive design and analysis of a 2.45 GHz RF power amplifier operating at 40 dBm using GaN technology. The amplifier is built around the CGH40010F transistor and employs a Linearization with Nonlinear Components Method (LINC) for enhanced linearity. The study outlines the design methodology, including the selection of the CGH40010F transistor and the application of the LINC technique. It investigates the amplifier's performance characteristics, including power output, linearity, and efficiency at the 2.45 GHz frequency. The findings reveal a robust Clas

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2

Yue, Kai, and Xu Biao Ma. "An Adjustable Linearization for RF Power Amplifier." Applied Mechanics and Materials 241-244 (December 2012): 703–8. http://dx.doi.org/10.4028/www.scientific.net/amm.241-244.703.

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This paper presented an adjustable analog predistortion linearization method for RF power amplifier. The linearization includes an attenuator, a phase shifter and an anti-parallel Schottky diode pair with DC bias, through adjusting these components, we can adjust predistortion characteristic of the linearization to be complementary to distortion characteristic of RF power amplifier. By cascading this linearization with power amplifier, we can improve linearity of amplifier. Firstly, we simulated the proposed predistortion linearization with software ADS, then the linearization was manufactured

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3

Memioglu, O., O. Kazan, A. Karakuzulu, et al. "Development of X-Band Transceiver MMIC’s Using GaN Technology." Advanced Electromagnetics 8, no. 2 (2019): 1–9. http://dx.doi.org/10.7716/aem.v8i2.1012.

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This paper describes X-Band power amplifier (PA), low noise amplifier (LNA) and switches that can be used in transmit/receive modules which are developed with GaN technology. For Transmit chain two 25 W high power amplifiers that are tuned between 8-10 GHz and 10-12 GHz bands are designed. A low noise amplifier with 2 W survivability and less than 2dB noise figure is designed for receive chain Furthermore, an RF switch that is capable of withstanding 25 W RF power is developed for the selection of transmit or receive chains. Measurement results show that both power amplifiers produce 25 W of p

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4

Gangadharan, Shaina, Ruqaiya Khanam, and Veeraiyah Thangasamy. "A Study of RF Power Amplifiers for 5G and Future Generation Mobile Communication: Can FinFET Replace CMOS?" International Journal of Experimental Research and Review 46 (December 30, 2024): 222–39. https://doi.org/10.52756/ijerr.2024.v46.018.

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A low-power strategy that can manage analogue, digital, and RF functionalities on a similar chip is crucial for wireless systems. Various difficulties restrict the widespread adoption of CMOS power amplifiers despite the fact that they provide highly integrated, low-cost wireless communication. Some of the main issues with CMOS power amplifiers include non-linearity, low breakdown voltage, a lack of high-voltage capacitors, and incorrect RF models. The RF signal is amplified without distortions using a linear power amplifier (LPA), which is less effective whenever driven by constant voltage. I

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5

Lee, Tze Kiu, Wing Shing Chan, and T. Y. M. Siu. "Power amplifier/low noise amplifier RF switch." Electronics Letters 36, no. 24 (2000): 1983. http://dx.doi.org/10.1049/el:20001404.

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6

Sajedin, Maryam, I. T. E. Elfergani, Jonathan Rodriguez, Raed Abd-Alhameed, and Monica Fernandez Barciela. "A Survey on RF and Microwave Doherty Power Amplifier for Mobile Handset Applications." Electronics 8, no. 6 (2019): 717. http://dx.doi.org/10.3390/electronics8060717.

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This survey addresses the cutting-edge load modulation microwave and radio frequency power amplifiers for next-generation wireless communication standards. The basic operational principle of the Doherty amplifier and its defective behavior that has been originated by transistor characteristics will be presented. Moreover, advance design architectures for enhancing the Doherty power amplifier’s performance in terms of higher efficiency and wider bandwidth characteristics, as well as the compact design techniques of Doherty amplifier that meets the requirements of legacy 5G handset applications,

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7

Park, Min-Sang, Gwon-Seok Sun, and Jin-Young Kim. "A Study on the Automatic Calibration Function of RF Amplifiers Using Artificial Neural Networks." Korea Industrial Technology Convergence Society 28, no. 2 (2023): 41–49. http://dx.doi.org/10.29279/jitr.2023.28.2.41.

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In this study, power amplifiers are designed and manufactured based on the frequency specifications by customers. After learning appropriate compensation values according to the function and performance degradation factors of the manufactured power amplifier using an artificial neural network, the power amplifier itself can maintain an optimal performance when its function and performance degrade. The artificial neural networks are applied to power amplifiers using the STM32F series of microcontrollers, which are being widely used for industrial purposes in recent years. Hence, after manufactu

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8

Babu, Ambily, Bangalore Gangadharaiah Shivaleelavathi, and Veeramma Yatnalli. "Comparative efficiency analysis of RF power amplifiers with fixed bias and envelope tracking bias." Indonesian Journal of Electrical Engineering and Computer Science 36, no. 2 (2024): 808. http://dx.doi.org/10.11591/ijeecs.v36.i2.pp808-816.

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RF power amplifier (RF PA) finds its application in almost all the areas of electronics, mobile communication being identified as a major area. The paper performs a comparative efficiency analysis of RF power amplifiers operating with a fixed bias and an envelope tracking bias. Simulations are performed using Keysight advanced design system (ADS) tool. A class a RF PA operating at a 12 dB gain is fixed for the work. 16 QAM LTE signal operating at 5 MHz input frequency, with a peak to average power ratio (PAPR) of 6.0 dB is used as input signal. An envelope simulation at 2.5 GHz is performed on

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9

Ambily, Babu Bangalore Gangadharaiah Shivaleelavathi Veeramma Yatnalli. "Comparative efficiency analysis of RF power amplifiers with fixed bias and envelope tracking bias." Indonesian Journal of Electrical Engineering and Computer Science 36, no. 2 (2024): 808–16. https://doi.org/10.11591/ijeecs.v36.i2.pp808-816.

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RF power amplifier (RF PA) finds its application in almost all the areas of electronics, mobile communication being identified as a major area. The paper performs a comparative efficiency analysis of RF power amplifiers operating with a fixed bias and an envelope tracking bias. Simulations are performed using Keysight advanced design system (ADS) tool. A class a RF PA operating at a 12 dB gain is fixed for the work. 16 QAM LTE signal operating at 5 MHz input frequency, with a peak to average power ratio (PAPR) of 6.0 dB is used as input signal. An envelope simulation at 2.5 GHz is performed on

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10

Qin, Wei, Yong Tao Li, Ying Jie Li, and Xiao Ping Xu. "High Efficiency 500W RF Generator." Advanced Materials Research 383-390 (November 2011): 1333–36. http://dx.doi.org/10.4028/www.scientific.net/amr.383-390.1333.

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In the previous literature about RF generator, Efficiency of output of RF generator can reach 60-70 percent. In this paper, a new 500W RF generator with high efficiency and high stability is designed and fabricated for plasma applications. The efficiency of a power amplifier in the RF generator is improved by using Class-E amplifier. The Class-E power amplifiers described here is based on a load network synthesized to have a transient response which maximizes power efficiency even if the active device switching times are substantial fractions of the AC cycle. For that circuit, the author measu

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11

Hamadou, Aissatou. "Implementation of direct current to direct current converter exploiting power amplifier." Annals of Electrical and Electronic Engineering 3, no. 3 (2020): 1–7. http://dx.doi.org/10.21833/aeee.2020.02.002.

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In the last years, RF power amplifiers are taking advantage of the switched dc-dc converters to use them in several architectures that may improve the efficiency of the amplifier, keeping good linearity. In this study a DC-DC power converter design suitable for high-frequency applications by using a class E power amplifier (Inverter), instead of using small battery values choosing Radio Frequency (RF) values and getting high efficiency of output voltage and a maximum of current and voltage values between 0-9 mW of power input in rectifier, the class E power amplifier designed by using GaN HEMT

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12

Hamadou, Aissatou. "Implementation of direct current to direct current converter exploiting power amplifier." Annals of Electrical and Electronic Engineering 3, no. 3 (2020): 1–7. http://dx.doi.org/10.21833/aeee.2020.03.001.

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In the last years, RF power amplifiers are taking advantage of the switched dc-dc converters to use them in several architectures that may improve the efficiency of the amplifier, keeping good linearity. In this study a DC-DC power converter design suitable for high-frequency applications by using a class E power amplifier (Inverter), instead of using small battery values choosing Radio Frequency (RF) values and getting high efficiency of output voltage and a maximum of current and voltage values between 0-9 mW of power input in rectifier, the class E power amplifier designed by using GaN HEMT

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13

Cancelli, Roberto, Gianfranco Avitabile, and Antonello Florio. "Designing and Optimizing a 2.4 GHz Complementary Metal–Oxide-Semiconductor Class-E Power Amplifier Combining Standard and High-Voltage Metal–Oxide-Semiconductor Field-Effect Transistors." Electronics 14, no. 6 (2025): 1135. https://doi.org/10.3390/electronics14061135.

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The advent of CMOS power amplifiers has enabled compact and cost-effective solutions for RF applications. Among the available options, switching amplifiers are the most competitive due to their superior efficiency. In this paper, we present the design of a fully integrated 130 nm CMOS class-E RF power amplifier optimized for 2.4 GHz ISM band operations that is compliant with the Bluetooth Low Energy (BLE) standard. The amplifier is based on a cascode configuration with charging acceleration capacitance and a combination of standard and high-voltage (HV) MOSFETs, ensuring optimal performance wh

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14

White, Theodore, Alex Opremcak, George Sterling, et al. "Readout of a quantum processor with high dynamic range Josephson parametric amplifiers." Applied Physics Letters 122, no. 1 (2023): 014001. http://dx.doi.org/10.1063/5.0127375.

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We demonstrate a high dynamic range Josephson parametric amplifier (JPA) in which the active nonlinear element is implemented using an array of rf-SQUIDs. The device is matched to the 50 Ω environment with a Klopfenstein-taper impedance transformer and achieves a bandwidth of 250–300 MHz with input saturation powers up to −95 dBm at 20 dB gain. A 54-qubit Sycamore processor was used to benchmark these devices, providing a calibration for readout power, an estimation of amplifier added noise, and a platform for comparison against standard impedance matched parametric amplifiers with a single dc

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15

Kijamnajsuk, P., K. Sibsiri, and C. Luengviriya. "Compact RF transmission unit for nuclear quadrupole resonance spectroscopy." Journal of Physics: Conference Series 2653, no. 1 (2023): 012003. http://dx.doi.org/10.1088/1742-6596/2653/1/012003.

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Abstract Nuclear quadrupole resonance (NQR) spectroscopy is a non-destructive measurement technique that enables to detect materials of interest very accurately. This technique works by sending high power electromagnetic waves with radio frequency (RF) very specific to the molecular structure to excite the sample and detecting the respond signal with the same frequency. Portable NQR detectors can be potentially developed to detect explosives with non-metallic containers in the fields. However, commercial RF high power amplifiers are large and heavy, so they are not practical for field usage. I

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16

RAHAYU, YUSNITA, NICOLAS PEDRO RITONGA, YUDI YULIYUS MAULANA, YUSSI PERDANA SAPUTERA, ARIEF BUDI SANTIKO, and ANHAR ANHAR. "Simulasi dan Realisasi Microstrip RF Amplifier 9,3 GHz Untuk Radar Pantai." ELKOMIKA: Jurnal Teknik Energi Elektrik, Teknik Telekomunikasi, & Teknik Elektronika 12, no. 1 (2024): 216. http://dx.doi.org/10.26760/elkomika.v12i1.216.

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ABSTRAKIndonesia merupakan negara kepulauan yang membutuhkan kemandirian teknologi radar pantai untuk keperluan pengawasan. Maka, kebutuhan akan RF amplifier yang murah merupakan suatu keharusan. Makalah ini menyajikan simulasi dan realisasi microstrip RF amplifier menggunakan RT/Duroid 5580 dan teknik matching stub pada frekuensi 9,3 GHz. Teknik ini merupakan yang efektif untuk frekuensi tinggi dan mencocokkan impedansi dengan nilai imajiner. Komponen aktif MGF2407A dipilih dengan konfigurasi DC fixed bias. Dari hasil simulasi, RF amplifier yang diusulkan memiliki gain sebesar 10,318 dB, S11

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17

Nadir, Z., and F. Touati. "Class-E Amplifier Design Improvements for GSM Frequencies." Journal of Engineering Research [TJER] 7, no. 2 (2011): 74. http://dx.doi.org/10.24200/tjer.vol8iss1pp74-82.

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Efficient power amplifiers are essential in portable battery-operated systems such as mobile phones. Also, the power amplifier (PA) is the most power-consuming building block in the transmitter of a portable system. This paper investigates how the efficiency of the power amplifier (which is beneficial for multiple applications in communcation sector) can be improved by increasing the efficiency of switching mode class E power amplifiers for frequencies of 900 MHz and 1800 MHz. The paper tackles modeling, design improvements and verification through simulation for higher efficiencies. This is t

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18

Mabrok, Mussa, Zahriladha Zakaria, and Nasrullah Saifullah. "Design of Wide-band Power Amplifier based on Power Combiner Technique with Low Intermodulation Distortion." International Journal of Electrical and Computer Engineering (IJECE) 8, no. 5 (2018): 3504. http://dx.doi.org/10.11591/ijece.v8i5.pp3504-3511.

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RF power amplifiers are one of challenging blocks in designing radio frequency transceivers, this is due to non-linearity behavior of power amplifiers that leads to inter-modulation distortion. This paper presents the design of wide-band power amplifier which combined with parallel coupled line band pass filter at the input and output of power amplifier to allow the only required frequency band to pass through the power amplifier. Class-A topology and ATF-511P8 transistor are used in this design. Advanced Design System software used as a simulation tool to simulate the designed wide-band power

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19

Mussa, Mabrok, Zakaria Zahriladha, and Saifullah Nasrullah. "Design of Wide-band Power Amplifier Based on Power Combiner Technique with Low Intermodulation Distortion." International Journal of Electrical and Computer Engineering (IJECE) 8, no. 5 (2018): 3504–11. https://doi.org/10.11591/ijece.v8i5.pp3504-3511.

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RF power amplifiers are one of challenging blocks in designing radio frequency transceivers, this is due to non-linearity behavior of power amplifiers that leads to inter-modulation distortion. This paper presents the design of wide-band power amplifier which combined with parallel coupled line band pass filter at the input and output of power amplifier to allow the only required frequency band to pass through the power amplifier. Class-A topology and ATF-511P8 transistor are used in this design. Advanced Design System software used as a simulation tool to simulate the designed wide-band power

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20

Avreline, N. V., V. Zvyagintsev, D. Gregoire, and K. Piletskiy. "Test stand for conditioning high power tetrodes at TRIUMF." Journal of Physics: Conference Series 2687, no. 8 (2024): 082001. http://dx.doi.org/10.1088/1742-6596/2687/8/082001.

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Abstract A major part of the 520 MeV Cyclotron’s RF system is the high-power RF amplifier. The amplifier is based on eight 4CW250,000B tetrodes. A new high-power tetrode or a high-power tetrode that underwent refurbishing could trip the RF system through inner sparks. The likelihood of those sparks should be reduced prior to applying nominal power to the new and refurbished tetrodes. This could be achieved by RF conditioning of these tetrodes on a test stand. The test stand represents a 150 kW RF amplifier loaded by a dummy load. The amplifier is built using common grid schematics. The test st

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21

Onsy, Rana Aly, Mohamed El-Nozahi, and Hani Ragai. "Design-Aware Parasitic-Aware Simulation Based Automation and Optimization of Highly Linear RF CMOS Power Amplifiers." Electronics 12, no. 2 (2023): 272. http://dx.doi.org/10.3390/electronics12020272.

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In this paper, a parasitic-design-aware simulation-based design tool is proposed for highly linear RF power amplifiers. The main aim of the proposed tool is to speed up the design process of RF power amplifiers. In addition, it provides accurate final designs taking into consideration the effect of parasitic components of both active and passive devices. The proposed tool relies on the knowledge of designing highly linear RF power amplifiers. Both the optimization steps and design methodology are presented in this paper. The proposed tool is verified by designing a highly linear RF power ampli

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22

McCune, Earl. "A Technical Foundation for RF CMOS Power Amplifiers: Part 2: Power Amplifier Architectures." IEEE Solid-State Circuits Magazine 7, no. 4 (2015): 75–82. http://dx.doi.org/10.1109/mssc.2015.2474236.

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23

Wei, Cai1 Jian Xu 2. and Liang Huang3. "LOW POWER SI CLASS E POWER AMPLIFIER AND RF SWITCH FOR HEALTH CARE." Informatics Engineering, an International Journal (IEIJ) 04, dec (2016): 01–08. https://doi.org/10.5121/ieij.2016.4402.

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This research was to design a 2.4 GHz class E Power Amplifier (PA) for health care, with 0.18um Semiconductor Manufacturing International Corporation CMOS technology by using Cadence software. And also RF switch was designed at cadence software with power Jazz 180nm SOI process. The ultimate goal for such application is to reach high performance and low cost, and between high performance and low power consumption design. This paper introduces the design of a 2.4GHz class E power amplifier and RF switch design. PA consists of cascade stage with negative capacitance. This power amplifier can tra

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24

McLain, J., R. H. Scott, and R. C. Vondrasek. "RF Frequency Combining for the ATLAS ECR Ion Sources." Journal of Physics: Conference Series 2743, no. 1 (2024): 012045. http://dx.doi.org/10.1088/1742-6596/2743/1/012045.

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Abstract The ECR2 and ECR3 ion sources at the Argonne Tandem Linac Accelerator System (ATLAS) operate with two microwave frequencies, improving their performance over single frequency operation. A typical method for transmitting both microwave frequencies is by having two separate frequency generators with their own corresponding amplifiers. These amplifiers transmit their microwaves into the ion source using separate waveguides. Another method that is investigated is to combine the low power microwave frequencies with a splitter/combiner and input the combined signals into the high-power ampl

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25

Hu, Yushi, and Slim Boumaiza. "Doherty Power Amplifier Distortion Correction Using an RF Linearization Amplifier." IEEE Transactions on Microwave Theory and Techniques 66, no. 5 (2018): 2246–57. http://dx.doi.org/10.1109/tmtt.2018.2815562.

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26

Varlamov, Oleg V., Dang C. Nguyen, and Sergey E. Grychkin. "COMBINATION OF SYNTHETIC HIGH-PERFORMANCE RF AMPLIFICATION TECHNIQUES." T-Comm 15, no. 9 (2021): 11–16. http://dx.doi.org/10.36724/2072-8735-2021-15-9-11-16.

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To amplify modern high crest factor telecommunication radio signals with high efficiency, switching operation modes of transistors and synthetic amplification methods are used. The most common of these are the Kahn method (EER – envelope elimination and restoration) and the outphasing method. However, application of these methods has a number of technological (in terms of element base capabilities) limitations on the bandwidth and dynamic range of amplified signal. To expand high-efficiency RF power amplifiers field of application, the possibilities of combination several different synthetic a

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Omer, Mohammad, and Farasat Munir. "Interference cancellation for higher harmonics of supply-modulated efficient RF power amplifier systems." International Journal of Microwave and Wireless Technologies 9, no. 4 (2016): 729–39. http://dx.doi.org/10.1017/s1759078716000933.

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In building highly efficient transmitters of today, one is forced to sacrifice linearity for efficiency. Some of the highest power amplifier efficiency figures are reported by envelope tracking (ET) amplifiers. These amplifiers can generate strong higher-order harmonics, which can lead to interference with receivers operating at the harmonic frequencies. Using non-linear interference cancellation, we can help to remove the interference being caused in those receivers. This paper looks at the problem of modeling the third and second-order harmonic emission from an ET amplifier. It derives the n

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28

Lakhwal, Prabhat Singh, Maninder Pal, and Vijay Kumar. "Adaptive Lineariser for RF Wideband Power Amplifier." International Journal of Advances in Computing and Information Technology 1, no. 4 (2012): 369–77. http://dx.doi.org/10.6088/ijacit.12.14004.

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29

Raab, F. "Efficiency of Outphasing RF Power-Amplifier Systems." IEEE Transactions on Communications 33, no. 10 (1985): 1094–99. http://dx.doi.org/10.1109/tcom.1985.1096219.

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30

Kim, Y., C. Park, H. Kim, and S. Hong. "CMOS RF power amplifier with reconfigurable transformer." Electronics Letters 42, no. 7 (2006): 405. http://dx.doi.org/10.1049/el:20060237.

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31

Raab, Frederick. "Efficiency of Doherty RF Power-Amplifier Systems." IEEE Transactions on Broadcasting BC-33, no. 3 (1987): 77–83. http://dx.doi.org/10.1109/tbc.1987.266625.

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32

Landin, Per N., Kurt Barbé, Wendy Van Moer, Magnus Isaksson, and Peter Händel. "Two novel memory polynomial models for modeling of RF power amplifiers." International Journal of Microwave and Wireless Technologies 7, no. 1 (2014): 19–29. http://dx.doi.org/10.1017/s1759078714000397.

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Two novel memory polynomial models are derived based on physical knowledge of a general power amplifier (PA). The derivations are given in detail to facilitate derivations of other model structures. The model error in terms of normalized mean square error (NMSE) and adjacent channel error power ratio (ACEPR) of the novel model structures are compared to that of established models based on the number of parameters using data measured on two different amplifiers, one high-power base-station PA and one low-power general purpose amplifier. The novel models show both lower NMSE and ACEPR for any ch

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Kim, Seung-Yong, and Choong-Mo Nam. "RF High Power Amplifier Module using AlN Substrate." Journal of the Korean Institute of Electrical and Electronic Material Engineers 22, no. 10 (2009): 826–31. http://dx.doi.org/10.4313/jkem.2009.22.10.826.

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Nam, Hyosung, Taejoo Sim, and Junghyun Kim. "A 2.4 GHz 20 W 8-channel RF Source Module with Solid-State Power Amplifiers for Plasma Generators." Electronics 9, no. 9 (2020): 1378. http://dx.doi.org/10.3390/electronics9091378.

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This paper presents a novel multi-channel type RF source module with solid-state power amplifiers for plasma generators. The proposed module is consisted of a DC control part, RF source generation part, and power amplification part. A 2-stage power amplifier (PA) is combined with a gallium arsenide hetero bipolar transistor (GaAs HBT) as a drive PA and a gallium nitride high electron mobility transistor (GaN HEMT) as a main PA, respectively. By employing 8 channels, the proposed module secures better area coverage on the wafer during semiconductor processes such as chemical vapor deposition (C

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Kimionis, John, Apostolos Georgiadis, Ana Collado, and Manos M. Tentzeris. "Enhancement of RF Tag Backscatter Efficiency With Low-Power Reflection Amplifiers." IEEE Transactions on Microwave Theory and Techniques 62, no. 12 (2014): 3562–71. https://doi.org/10.1109/TMTT.2014.2363835.

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Increasing backscatter tag communication ranges is crucial for the development of low-power long-range wireless sensor networks. A major limitation for increasing the signal-to-noise ratio (SNR) for RF identification tags lies in the fact that tag antennas are terminated with passive loads for modulation, which yields reflection-coefficient values less than unity. Recent work in the field has exploited reflection amplifiers that achieve reflection-coefficient values larger than unity to increase the communication range. However, most of these systems rely on increasing the reflection coefficie

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McCune, Earl. "A Technical Foundation for RF CMOS Power Amplifiers: Part 1: Key Power Amplifier Issues." IEEE Solid-State Circuits Magazine 7, no. 3 (2015): 81–85. http://dx.doi.org/10.1109/mssc.2015.2446455.

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Zang, Yufeng, Weimin Shi, Jinting Liu, Tian Qi, and Mingyu Li. "Load Mismatch Compensation of Load-Modulated Power Amplifiers: A Comprehensive Review." Energies 18, no. 9 (2025): 2157. https://doi.org/10.3390/en18092157.

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With the diversification, acceleration, and arraying of wireless communication systems, power amplifiers (PAs) face stricter demands in terms of RF operation bandwidth, high-efficiency power range, and load mismatch compensation. After years of development, load-modulated PAs (LMPAs) can maintain high efficiency over a wide bandwidth and a larger output back-off (OBO) range. However, there is obvious performance degradation when the load impedance of the current LMPAs is mismatched. To ensure the perfect application of power amplifiers in wireless communication systems, load mismatch compensat

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Tejaswi, Dhruthi, Samudrala Vinay, Vidyuth Sriram, Ananda M., and Kalpana A.B. "Design of a Novel 2.4GHz RF Transmitter." International Journal of Advanced Science Computing and Engineering 3, no. 3 (2021): 101–12. http://dx.doi.org/10.30630/ijasce.3.3.50.

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The world of Wireless Technology has been improving consistently due to its high speed and reliability. Some of the demands that need to be fulfilled include larger network capacity, improved data rates and so on. This paper focuses on the design and simulation of the Transmitter, which is a key component in an RF Transceiver Module. It is built by cascading an Up Conversion Mixer, a Bandpass Filter and a Power Amplifier as its most fundamental units. The Cadence Virtuoso Tool was used to construct this Transmitter block in 180nm node technology. The IF signal to the Mixer is 100 MHz and the L

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Tejaswi, Dhruthi, Samudrala Vinay, Vidyuth Sriram, Ananda M., and Kalpana A.B. "Design of a Novel 2.4GHz RF Transmitter." International Journal of Advanced Science Computing and Engineering 3, no. 3 (2021): 101–12. http://dx.doi.org/10.62527/ijasce.3.3.50.

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The world of Wireless Technology has been improving consistently due to its high speed and reliability. Some of the demands that need to be fulfilled include larger network capacity, improved data rates and so on. This paper focuses on the design and simulation of the Transmitter, which is a key component in an RF Transceiver Module. It is built by cascading an Up Conversion Mixer, a Bandpass Filter and a Power Amplifier as its most fundamental units. The Cadence Virtuoso Tool was used to construct this Transmitter block in 180nm node technology. The IF signal to the Mixer is 100 MHz and the L

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Montesinos, Ronald, Corinne Berland, Mazen Abi Hussein, Olivier Venard, and Philippe Descamps. "Analysis of RF power amplifiers in LINC systems." International Journal of Microwave and Wireless Technologies 4, no. 1 (2012): 81–91. http://dx.doi.org/10.1017/s1759078711001085.

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LInear amplification using Non-linear Components (LINC) is an architecture that achieves linear power amplification for radio-frequency (RF) transmitters. This paper describes the impact of RF power amplifiers (PAs) class on the overall system performances. The linearity and efficiency of the LINC transmitter with different PA classes (AB, B, C, D, E, F, F−1, and J) are evaluated and compared, in terms of error vector magnitude (EVM), adjacent channel leakage ratio (ACLR), and power added efficiency (PAE), for a 16QAM modulation having 5.6 dB peak to average power ratio. Simulations are perfor

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Gao, Mingming, Gaoyang Xu, and Jingchang Nan. "Design of Concurrent Tri-Band High-Efficiency Power Amplifier Based on Wireless Applications." Electronics 11, no. 21 (2022): 3544. http://dx.doi.org/10.3390/electronics11213544.

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To meet the existing requirements of multiband communication and improve the efficiency and performance of communication RF modules, a concurrent tri-band high-efficiency power amplifier operating in three frequency bands is proposed. The input and output impedance values of concurrent power amplifier is analyzed, and the input and output-matching circuit and bias circuit are designed. Through the impedance compensation principle, the impedance matching of three frequency bands is realized, and the amplifier can maintain high power and high efficiency at three arbitrary wide interval frequenci

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Patiño-Gómez, Moisés, and Francisco-Javier Ortega-González. "High-Efficiency GaN-Based Power Amplifiers for Envelope Nonlinearities’ Mitigation in VHF Wideband Polar-Mode Transmitters." Electronics 12, no. 18 (2023): 3866. http://dx.doi.org/10.3390/electronics12183866.

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Space-based communications at the very high frequency (VHF) band for air traffic management is a new technology application under development that requires energy-efficient architectures to mitigate the power limitations of satellite platforms. The usage of high-efficiency radiofrequency (RF) transmitters can help reduce the power consumption, but nonlinearities concerning the amplified signal in wide fractional bandwidth systems are a problem to solve. This paper proposes a high-efficiency (RF) power amplifier (PA) for satellite communications at the VHF band that aims to reduce the envelope

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Silveira, Daniel D., Thiago V. N. Coelho, and Alexandre Bessa dos Santos. "Evolution of Black-Box Models Based on Volterra Series." Journal of Applied Mathematics 2015 (2015): 1–8. http://dx.doi.org/10.1155/2015/638978.

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This paper presents a historical review of the many behavioral models actually used to model radio frequency power amplifiers and a new classification of these behavioral models. It also discusses the evolution of these models, from a single polynomial to multirate Volterra models, presenting equations and estimation methods. New trends in RF power amplifier behavioral modeling are suggested.

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Lee, Changhyun, and Changkun Park. "Design methodology for a switching-mode RF CMOS power amplifier with an output transformer." International Journal of Microwave and Wireless Technologies 8, no. 3 (2015): 471–77. http://dx.doi.org/10.1017/s1759078715001415.

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In this study, we propose a design methodology for a switching-mode RF CMOS power amplifier with an output transformer. For a given supply voltage, output power, and target efficiency, the initial values of the transistor size, output inductance, and capacitance can be sequentially determined during the design of the power amplifier. The breakdown voltage of the power transistor is considered in the design methodology. To prove the feasibility of the proposed design methodology, we provide the design example of a 2.4-GHz switching-mode CMOS power amplifier with 180-nm RF CMOS technology. From

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Na, Jongyun, Sang-Hwa Yi, Jaekyung Shin, et al. "2.4 GHz GaN HEMT Class-F Synchronous Rectifier Using an Independent Second Harmonic Tuning Circuit." Sensors 21, no. 5 (2021): 1608. http://dx.doi.org/10.3390/s21051608.

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This paper proposes a class-F synchronous rectifier using an independent second harmonic tuning circuit for the power receiver of 2.4 GHz wireless power transmission systems. The synchronous rectifier can be designed by inverting the RF output port to the RF input port of the pre-designed class-F power amplifier based on time reversal duality. The design of the class-F power amplifier deploys an independent second harmonic tuning circuit in the matching networks to individually optimize the impedances of the fundamental and the second harmonic. The synchronous rectifier at the 2.4 GHz frequenc

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Kim, J., and J. Jeong. "Efficiency enhancement of RF power amplifier using reconfigurable power dividers." Electronics Letters 47, no. 17 (2011): 993. http://dx.doi.org/10.1049/el.2011.2159.

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Fazio, M. V., and R. F. Hoeberling. "A reflexing electron microwave amplifier for rf particle accelerator applications." Laser and Particle Beams 6, no. 3 (1988): 613–20. http://dx.doi.org/10.1017/s0263034600005553.

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The evolution of rf-accelerator technology toward high-power, high-current, lowemittance beams produces an ever-increasing demand for efficient, very high power microwave power sources. The present klystron technology has performed very well but is not expected to produce reliable gigawatt peak-power units in the 1- to 10-GHz regime. Further major advancements must involve other types of sources. The reflexing-electron class of sources can produce microwave powers at the gigawatt level and has demonstrated operation from 800-MHz to 40-GHz. The pulse length appears to be limited by diode closur

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Bondarenko, T. V., S. Y. Ilynski, S. A. Polikhov, and G. B. Sharkov. "Power combining scheme of solid-state RF amplifier." Journal of Physics: Conference Series 1238 (June 2019): 012075. http://dx.doi.org/10.1088/1742-6596/1238/1/012075.

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Magesacher, Thomas, Peter Singerl, and Martin Mataln. "Optimal Segmentation for Piecewise RF Power Amplifier Models." IEEE Microwave and Wireless Components Letters 26, no. 11 (2016): 909–11. http://dx.doi.org/10.1109/lmwc.2016.2614974.

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Kang, Seunghoon, Eun-Taek Sung, and Songcheol Hong. "Dynamic Feedback Linearizer of RF CMOS Power Amplifier." IEEE Microwave and Wireless Components Letters 28, no. 10 (2018): 915–17. http://dx.doi.org/10.1109/lmwc.2018.2861881.

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