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Dissertations / Theses on the topic 'Semiconductor oxide compound'

Author: Grafiati

Published: 28 May 2022

Last updated: 31 July 2025

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1

Ramanathan, Sivakumar. "Optical Characterization of Electrochemically Self-Assembled Compound Semiconductor Nanowires." VCU Scholars Compass, 2006. http://scholarscompass.vcu.edu/etd/1436.

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Semiconductor nanowires have attracted considerable attention as possible source for lasers and optical storage media. We report the fabrication and optical characterization of ZnO and CdS nanowires. The former are produced by electrochemical deposition of Zn inside nanoporous alumina films containing regimented arrays of 10nm, 25nm and 50 nm diameter pores, followed by room temperature chemical oxidization. Fluorescence spectroscopy shows different characteristics associated with different sample diameter. The 50 nm ZnO nanowires show an exciton recombination peak and an additional peak relat

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2

Fenwick, William Edward. "Metalorganic chemical vapor deposition of gallium nitride on sacrificial substrates." Diss., Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/34687.

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GaN-based light emitting diodes (LEDs) face several challenges if the technology is to make a significant impact on the solid state lighting market. The two most pressing of these challenges are cost and efficiency. The development of alternative substrate technologies shows promise toward addressing both of these challenges, as both GaN-based device technology and the associated metalorganic chemical vapor deposition (MOCVD) technology are already relatively mature. Zinc oxide (ZnO) and silicon (Si) are among the most promising alternative substrates for GaN epitaxy. This work focuses on

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3

Holmes, Adrian Lawrence. "Compound semiconductor native oxide-based technologies for optical and electrical devices grown on GaAs substrates using MOCVD /." Digital version accessible at:, 1999. http://wwwlib.umi.com/cr/utexas/main.

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4

Goyal, Puneet. "Design and simulation of strained-Si/strained SiGe dual channel hetero-structure MOSFETs /." Online version of thesis, 2007. http://hdl.handle.net/1850/5281.

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5

Владзієвська, П. А., О. В. Д’яченко, Анатолій Сергійович Опанасюк, Анатолий Сергеевич Опанасюк та Anatolii Serhiiovych Opanasiuk. "Структурні характеристики плівок твердого розчину (Zn, Mg) O, осаджених методом пульсуючого спрей-піролізу". Thesis, Сумський державний університет, 2017. http://essuir.sumdu.edu.ua/handle/123456789/65498.

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Напівпровідникові оксидні сполуки знаходять все більшого застосування в електроніці, однак для цього їх структурні та оптичні властивості повинні чітко відповідати конкретним застосуванням. Для керування фізичними властивостями шарів напівпровідників застосовують введення ізовалентних домішок, при цьому твердий розчин набуває проміжних між вихідними сполуками характеристик. Для проведення структурних досліджень зразків застосовувався метод рентгеноструктурного аналізу. Шляхом порівняння міжплощинних відстаней і відносної інтенсивності досліджених зразків і еталона (картки JCPDS) було проведено

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6

Clarke, Jill. "The photocatalytic degradation of phenolic compounds." Thesis, Open University, 1998. http://oro.open.ac.uk/57738/.

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Semiconductor photocatalysis degrades phenolic pollutants to carbon dioxide and water, but the mechanisms of this potentially attractive method of environmental remediation remain unclear. This study aimed to elucidate the primary molecular events by HPLC analysis of the initial products of degradation in water or aqueous acetonitrile. The position of substituents relative to the hydroxyl group were found to influence the reaction rate and also primary oxidation steps, and hence the intermediate profile. 2,6- Dialkylated phenols reacted fastest and showed high conversion to dehydrodimeric prod

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7

Hui, Chun-wai. "Positron annihilation spectroscopic studies of undoped n-type zinc oxide single crystal." Click to view the E-thesis via HKUTO, 2006. http://sunzi.lib.hku.hk/hkuto/record/B38573398.

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8

Hui, Chun-wai, and 許俊偉. "Positron annihilation spectroscopic studies of undoped n-type zinc oxide single crystal." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2006. http://hub.hku.hk/bib/B38573398.

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9

Chinchani, Rameshwari. "Strained silicon/silicon-germanium heterostructure complimentary metal oxide semiconductor devices a simulation study of linearity /." Ohio : Ohio University, 2004. http://www.ohiolink.edu/etd/view.cgi?ohiou1176143999.

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10

Gilstrap, Richard Allen Jr. "A colloidal nanoparticle form of indium tin oxide: system development and characterization." Diss., Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/33995.

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A logical progression from the maturing field of colloidal semiconductor quantum dots to the emerging subclass of impurity-doped colloidal semiconductor nanoparticles is underway. To this end, the present work describes the formation and analysis of a new form of Tin-doped Indium Oxide (ITO). The form is that of a colloidal dispersion comprised of pure-phase, 4-6 nanometer ITO particles possessing an essentially single crystalline character. This system forms a non-agglomerated, optically clear solution in a variety of non-polar solvents and can remain in this state, at room temperature, f

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11

Moreno, Debra Ann. "Design, synthesis, and characterization of monomeric group 2 element Bis(alkoxide) compounds ; Part II, Synthesis and characterization of some group 2 element imidophosphonate compounds." Diss., Georgia Institute of Technology, 1997. http://hdl.handle.net/1853/30267.

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12

Udom, Innocent. "Investigation of Enhanced Titanium and Zinc Oxide Semiconductors for the Photodegradation of Aqueous Organic Compounds." Scholar Commons, 2014. https://scholarcommons.usf.edu/etd/5596.

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Growing demand and shortages of potable water sources due to industrialization have become a great concern worldwide. Various approaches and solutions have been adopted to provide cleaner and quality water. In a preliminary study, a method of treating wastewater was investigated in which algae were used to remove nutrients (nitrogen and phosphorous) from wastewater and then the algae were harvested for use as a biofuel. The results from this investigation are included in the Appendix B. Employing traditional oxidants, such as hydrogen peroxide, chlorine, and ozone, for treatment of recalcitran

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13

Mazoyer, Pascale. "Analyse et caractérisation des mécanismes de perte de charge relatifs aux diélectriques multicouches du point mémoire EPROM." Université Joseph Fourier (Grenoble), 1994. http://www.theses.fr/1994GRE10009.

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L'evolution des memoires a semiconducteurs et en particulier de la famille eprom (erasable read only memory) est liee a l'identification des phenomenes determinants du processus de perte de la charge electronique stockee. Les cellules etudiees ici sont toutes proches des points de fonctionnement de filieres industrialisees ou en cours de developpement (de 4 a 256 megabits). On distingue deux mecanismes de perte de charge. Le premier est une fonction de la nature des dielectriques presents dans la structure et des lois qui regissent la conduction qui leur est associee. Le second est lie a la mi

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14

Adewoyin, Aiyeyemi Anike. "Carbon dioxide response of semiconducting oxide gas sensitive resistors." Thesis, University College London (University of London), 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.287945.

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15

Ternullo, Luigi. "Investigations on thin film polysilicon MOSFETs with Si-Ge ion implanted channels /." Online version of thesis, 1992. http://hdl.handle.net/1850/11166.

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16

Lie, Fee Li. "Interface Formation Between High Dielectric Permittivity Films and III-V Compound Semiconductors using HF Chemistries and Atomic Layer Deposition." Diss., The University of Arizona, 2011. http://hdl.handle.net/10150/204301.

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In-based III-V compound semiconductors have higher electron mobilities than either Si or Ge and direct band gaps. These properties could enable the fabrication of low power, high-speed n-channel metal oxide semiconductor field effect transistors (MOSFETs) and optoelectronics combining MOS technology with photonics. Since thermal and native oxides formed on III-V surfaces exhibit large current leakage and high densities of trap states, a key to incorporating these materials into advanced devices is the development of processing steps that form stable interfaces with dielectric layers. In this t

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17

Fichou, Denis. "L'interface oxyde de zinc/électrolyte : étude des processus primaires." Paris 6, 1986. http://www.theses.fr/1986PA066259.

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18

Juvert, Sández Joan. "Development and optimization of silicon based light sources for integration into a sensor platform." Doctoral thesis, Universitat de Barcelona, 2014. http://hdl.handle.net/10803/275940.

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We have characterized electroluminescent devices based on silicon rich oxide and/or silicon rich nitride. We have discussed the photoluminescence and structural characterization of the active layers and the electrical and electroluminescent characterization of full devices. We have noted that the electroluminescence can appear in the form of discrete points scattered across the active area of the devices, in the form of emission along the rim of the active area, or homogeneously distributed across the area. These different kinds of emission have been related to the optical and electrical pr

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19

Fick, Jochen. "Étude non linéaire des couches minces de silice fabriquées par sol-gel et dopées avec des microcristallites de semiconducteur." Grenoble INPG, 1995. http://www.theses.fr/1995INPG0009.

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Des couches minces de sio2-tio2 dopees avec des microcristallites de cds et pbs ont ete fabriquees par la technique de sol-gel. La qualite optique de ces echantillons est tres bonne avec des pertes par propagation de l'ordre de quelques db/cm. La presence des semiconducteurs a ete prouvee par les spectres d'absorption, rayons x, tem, sims, eds et rbs. En general la taille des microcristallites est de 3-4 nm. Le deplacement de la bande d'absorption du au confinement quantique a ete observe dans les spectres d'absorption. Les proprietes non lineaires des couches ont ete mesurees en employant la

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20

Bouchikhi, Benachir. "Propriétés physiques des structures métal/isolant/semiconducteur réalisées sur INP(N) à l'aide d'un oxyde natif plasma." Nancy 1, 1988. http://www.theses.fr/1988NAN10085.

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On aborde 3 aspects : la passivation du phosphorure d'indium dans un plasma RF d'oxygène, la caractérisation électrique des structures MIS élaborées à l'aide des mesures (C-V), (G-V) et d'autres mesures de spectrométries de niveaux profonds (DLTS-DDLTS), et l'élaboration du schéma équivalent de la structure MIS

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21

Lakhdari, Hacène. "Etude par technique spectroscopique de capacite transitoire des defauts a l'interface semiconducteur-isolant." Paris 6, 1988. http://www.theses.fr/1988PA066341.

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Explication du comportement inhabituel de certaines structures mos en dlts (non-saturation du spectre dlts pour un remplissage total de la densite d'etats d'interface) par une interaction par effet tunnel entre les porteurs libres du semiconducteur et les defauts des premieres couches d'oxyde (etats lents). Etude de la degradation des interfaces si-sio::(2) sous injection d'electrons chauds en comparant la cinetique de creation des etats lents et rapides. Etude des defauts induits par plasma ionique reactif

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22

Lauterbach, Adam Peter. "Low-cost SiGe circuits for frequency synthesis in millimeter-wave devices." Australia : Macquarie University, 2010. http://hdl.handle.net/1959.14/76626.

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"2009"<br>Thesis (MSc (Hons))--Macquarie University, Faculty of Science, Dept. of Physics and Engineering, 2010.<br>Bibliography: p. 163-166.<br>Introduction -- Design theory and process technology -- 15GHz oscillator implementations -- 24GHz oscillator implementation -- Frequency prescaler implementation -- MMIC fabrication and measurement -- Conclusion.<br>Advances in Silicon Germanium (SiGe) Bipolar Complementary Metal Oxide Semiconductor (BiCMOS) technology has caused a recent revolution in low-cost Monolithic Microwave Integrated Circuit (MMIC) design. -- This thesis presents the design,

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23

Salman, Seyhan. "Theoretical characterization of the charge-transport and electroluminescence properties of pi-conjugated organic materials." Diss., Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/34789.

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The structural, electronic, and optical properties of a series of organic pi-conjugated polymer, oligomer, or molecular materials of interest for applications in organic electronics are described. For this purpose, quantum-chemical techniques ranging from Density Functional Theory to Hartree-Fock ab initio and semiempirical methods are used to evaluate the charge-transport, charge-transfer, and electroluminescence properties of pi-conjugated organic materials. First, the effect of electronic polarization on the charge-transport parameters of organic semiconductors is discussed. A generalized m

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24

Ali, Abdulkahhar. "Etudes electrochimique et chromatographique de la photooxydation des alcools primaires aliphatiques sur des suspensions de catalyseurs a base de dioxyde de titane." Poitiers, 1988. http://www.theses.fr/1988POIT2262.

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25

Martinet, Christine. "Oxydation du silicium par plasma d'oxygène : Cinétiques de croissance et analyses physiques des couches." Université Joseph Fourier (Grenoble ; 1971-2015), 1995. http://www.theses.fr/1995GRE10162.

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Ce travail est consacre a l'etude de l'oxyde de silicium realise par oxydation plasma a basse temperature dans un reacteur a resonance cyclotronique electronique repartie. Nous nous sommes interesses aux cinetiques de croissance en anodisation plasma (tension appliquee au substrat superieure au potentiel plasma) a courant constant qui decrivent bien un modele de diffusion d'ions o#- assistee champ. Mais, nous avons mis en evidence l'existence d'un premier regime, ou la tension reste constante, qui correspondrait a la formation d'une couche conductrice d'epaisseur 10-15 nm due aux photons u. V.

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26

Chaillout-Bougerol, Catherine. "Contribution à l'étude du système BaPb(1-x)Bi(x)O(3) : relations entre les propriétés structurales, chimiques et physiques." Grenoble 1, 1986. http://www.theses.fr/1986GRE10017.

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Etude de la solution solide du titre du fait de l'interet suscite par ses proprietes physiques : phrase supraconductrice pour 0,05 x 0,30 avec tc# 13k, transition metal-semiconducteur pour x # 0,30. La structure de ces composes est de type perovskite. Selon la concentration en pb et bi, la structure de base cubique se deforme differemment. Etude de la valence de bi et de la stoechiometrie en oxygene, dans babi0::(3) en particulier. Proposition de modeles qui permettent de concilier divers resultats publies anterieurement concernant les proprietes structurales et physiques

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27

Chen, Hao, and 陳豪. "Characterization of III-V Compound Semiconductor MOSFETs with Titanium Oxide and Aluminum Oxide Stacked Layers as Gate Oxides." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/ggp92v.

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碩士<br>國立中山大學<br>電機工程學系研究所<br>102<br>Due to the high electron mobility compared with Si, much attention has been focused on III-V compound semiconductors (gallium arsenide (GaAs), indium phosphide (InP), indium gallium arsenide (InGaAs)) high-speed devices. The high-k material TiO2 not only has high dielectric constant (k =35-100) but also has well lattice match with GaAs, InP and InGaAs substrate. Therefore, titanium oxide (TiO2) was chosen to be the gate oxide in this study, and aluminum oxide (Al2O3) has high bandgap (Eg~9eV) and self-cleaning capability, we use TiO2 and Al2O3 stack layers t

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28

Yen, Chih-Feng, and 顏志峰. "Characterization of III-V Compound Semiconductor MOS Structures with Titanium Oxide as Gate Oxide." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/chap68.

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博士<br>國立中山大學<br>電機工程學系研究所<br>96<br>Due to the high electron mobility compared with Si, much attention has been focused on III-V compound semiconductors (gallium arsenide (GaAs) and indium phosphide (InP)) high-speed devices. The high-k material TiO2 not only has high dielectric constant (k = 35-100) but has well lattice match with GaAs and InP substrate. Therefore, titanium oxide (TiO2) was chosen to be the gate oxide in this study. The major problem of III-V compound semiconductors is known to have poor native oxide on it and leading to the Fermi level pinning at the interface of oxide and se

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29

Chang, Wei-hau, and 張洧豪. "Characterization of III-V Compound Semiconductor MOSFETs with Titanium Oxide and Silicon Oxide Stacked Layers as Gate Oxide." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/e33xv9.

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碩士<br>國立中山大學<br>電機工程學系研究所<br>101<br>Due to the high electron mobility compard with Si, much attention has been focused on III-V compound semiconductors (gallium arsenide (GaAs) and indium phosphide (InP)) high-speed devices. The high-k material TiO2 not only has high dielectric constant (k =35-100) but has well lattice match with GaAs and InP substrate. Therefore, titanium oxide (TiO2) was chosen to be the gate oxide in this study The major problem of III-V compound semiconductor is known to have poor native oxide on it leading to the Fermi level pinning at the interface of oxide and semicon

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30

Bag, Sankar Prasad, and 貝克桑卡爾•普拉薩德. "Development of lead zirconate titanate and rare-earth oxide compound films using sol-gel method for ferroelectric devices and electrolyte-insulator-semiconductor sensors." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/h3dq6u.

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博士<br>長庚大學<br>電子工程學系<br>106<br>The sol-gel route is a versatile wet chemistry method, suitable for the preparation of multilayer thin films with defined thickness and surface roughness. In this thesis work, sol-gel derived undoped and doped high-k ferroelectric materials lead zirconate titanate- Pb(ZrxTi1-x)O3 (PZT), and rare-earth element high-κ Ce2(Zr1-xTix)Oy (CZT) mixed oxide films were prepared by spin coating technique on different substrates for ferroelectric MIM device application and electrolyte-insulator-semiconductor (EIS) pH-sensor for biomedical application, respectively. Ferroele

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31

Hoshino, Ken. "Instability and temperature-dependence assessment of IGZO TFTs." Thesis, 2008. http://hdl.handle.net/1957/9726.

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Amorphous oxide semiconductors (AOSs) are of great current interest for thin-film transistor (TFT) channel layer applications. In particular, indium gallium zinc oxide (IGZO) is under intense development for commercial applications because of its demonstrated high performance at low processing temperatures. The objective of the research presented in this thesis is to provide detailed assessments of device stability, temperature dependence, and related phenomena for IGZO-based TFTs processed at temperatures between 200 °C and 300 °C. TFTs tested exhibit an almost rigid shift in log₁₀(I[subsc

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32

Niranjan, Manish Kumar 1977. "Theoretical investigation of contact materials for emerging electronic and spintronic devices." Thesis, 2007. http://hdl.handle.net/2152/3602.

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We present a theoretical study of the electronic structure, surface energies and work functions of orthorhombic Pt monosilicide and germanides of Pt, Ni, Y and Hf within the framework of density functional theory (DFT). Calculated work functions for the (001) surfaces of PtSi, NiGe and PtGe suggest that these metals and their alloys can be used as self-aligned contacts to p-type silicon and germanium. In addition, we also study electronic structure and calculate the Schottky-barrier height at Si(001)/PtSi(001) interface and GaAs(001)/NiPtGe(001) interfaces with different GaAs(001) and NiPtGe

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33

Dey, Sagnik. "Fabrication modeling and reliability of novel architecture and novel materials based MOSFET devices." Thesis, 2006. http://hdl.handle.net/2152/2714.

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34

Choi, Rino Lee Jack Chung-Yeung. "Processing and reliability studies on hafnium oxide and hafnium silicate for the advanced gate dielectric application." 2004. http://repositories.lib.utexas.edu/bitstream/handle/2152/1907/choir042.pdf.

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35

Choi, Rino. "Processing and reliability studies on hafnium oxide and hafnium silicate for the advanced gate dielectric application." Thesis, 2004. http://hdl.handle.net/2152/1907.

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36

Kang, Changseok. "A study on the material and device characteristics of hafnium oxynitride MOSFETs with TaN gate electrodes." Thesis, 2004. http://hdl.handle.net/2152/1153.

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Kang, Changseok Lee Jack Chung-Yeung. "A study on the material and device characteristics of hafnium oxynitride MOSFETs with TaN gate electrodes." 2004. http://wwwlib.umi.com/cr/utexas/fullcit?p3143280.

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38

Donnelly, Joseph Patrick 1965. "Metal-oxide-semiconductor devices based on epitaxial germanium layers grown selectively directly on silicon substrates by ultra-high-vacuum chemical vapor deposition." 2009. http://hdl.handle.net/2152/18388.

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This document details experiments attempting to increase the performance of metal-oxide-semiconductor field-effect-transistors (MOSFETs) which are the mainstay of the semiconductor industry. Replacing the silicon channel with an ultra-thin epitaxial germanium layer grown selectively on a silicon (100) bulk wafer is examined in detail. The gate oxide chosen for the germanium devices is a high-k gate oxide, HfO2, and the gate electrode is a metal gate, tantalum-nitride. They demonstrate large improvements in drive current and mobility over identically processed silicon PMOSFETs. In addition to

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39

Nawaz, Muhammad. "Resistive switching characteristics in high-k dielectric thin films." Phd thesis, 2012. http://hdl.handle.net/1885/156046.

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Hafnium oxide (HfO{u2082}) and hafnium silicate (HfxSi{u2081}-x0{u2082}) thin films are of interest as replacement for Si0{u2082} in future microelectronic devices due to their high dielectric constant (k) and better thermal stability, respectively. These properties make hafnium oxide a potential candidate for the fabrication of integrated planar waveguide devices or structures that combine electronic and photonic functionality on a single chip. However, one potential limitation of the material is that it crystallizes at relatively low temperatures, ~300-400{u00B0}C. This can result in in

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40

Sanathanamurthy, Siddartha. "Simulated temperature dependency of SEU sensitivity in A 0.5 [mu]m CMOS SRAM." Diss., 2008. http://etd.library.vanderbilt.edu/ETD-db/available/etd-08012008-082330/.

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41

Kelly, David Quest. "Metal-oxide-semiconductor devices based on epitaxial germanium-carbon layers grown directly on silicon substrates by ultra-high-vacuum chemical vapor deposition." Thesis, 2006. http://hdl.handle.net/2152/2903.

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42

(10225202), Jinhyun Noh. "STRUCTURAL AND MATERIAL INNOVATIONS FOR HIGH PERFORMANCE BETA-GALLIUM OXIDE NANO-MEMBRANE FETS." Thesis, 2021.

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<p>Beta-gallium oxide (<i>β</i>-Ga<sub>2</sub>O<sub>3</sub>) is an emerging wide bandgap semiconductor for next generation power devices which offers the potential to replace GaN and SiC. It has an ultra-wide bandgap (UWBG) of 4.8 eV and a corresponding <i>E</i><sub>br </sub>of 8 MV/cm. <i>β</i>-Ga<sub>2</sub>O<sub>3 </sub>also possesses a decent intrinsic electron mobility limit of 250 cm<sup>2</sup>/V<i>·</i>s, yielding high Baliga’s figure of merit of 3444. In addition, the large bandgap of <i>β</i>-Ga<sub>2</sub>O<sub>3 </sub>gives stability in harsh environment operation at high temperatu

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Jachalke, Sven. "Characterization of Novel Pyroelectrics: From Bulk GaN to Thin Film HfO2." 2018. https://tubaf.qucosa.de/id/qucosa%3A33969.

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The change of the spontaneous polarization due to a change of temperature is known as the pyroelectric effect and is restricted to crystalline, non-centrosymmetric and polar matter. Its main application is the utilization in infrared radiation sensors, but usage for waste heat energy harvesting or chemical catalysis is also possible. A precise quantification, i.e. the measurement of the pyroelectric coefficient p, is inevitable to assess the performance of a material. Hence, a comprehensive overview is provided in this work, which summarizes and evaluates the available techniques to characteri

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