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Dissertations / Theses on the topic 'Semiconductors II-VI'

Author: Grafiati

Published: 8 July 2022

Last updated: 31 July 2025

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1

Claybourn, M. "Transient spectroscopy of II-VI semiconductors." Thesis, Durham University, 1985. http://etheses.dur.ac.uk/9298/.

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DLTS, ODLTS and DLOS have been used to characterise the main deep level trapping centres in some II-VI semiconductors; these were single crystal CdS, (ZnCd)S, CdSe, CdTe and ZnS, and polycrystalline CdS films. Undoped, single crystal CdS contained four electron traps as detected by DLTS, at 0.29eV, 0.41eV, 0.61eV and 0.74eV below the conduction band (CB). The first two were observed in all samples and were due to native defects. The two states of highest energy were found only in material that had been annealed in S or Cd vapours. The 0.61ev level could be photoinduced by illumination at photo

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2

Boyce, Paul John. "Raman spectroscopy of II-VI semiconductors." Thesis, University of East Anglia, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.357210.

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3

Wasenczuk, Adam. "Defects in epitaxial II-VI semiconductors." Thesis, University of Southampton, 1998. https://eprints.soton.ac.uk/426603/.

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4

Cozzarini, Luca. "Nanomaterials based on II-VI Semiconductors." Doctoral thesis, Università degli studi di Trieste, 2012. http://hdl.handle.net/10077/7359.

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2010/2011<br>This thesis describes: (i) synthesis and characterization of colloidal nanocrystals of II-VI semiconductor compounds; (II) development of two novel materials using such nanocrystals as “building blocks”: (IIa) a nanocrystals/polymer composite, to be used as phosphor in LED-based lighting devices; (IIb) an inorganic, nano-structured multiphase material, showing a promising geometry as an electronic intermediate band material. Different typologies of nanocrystals (single-phase, alloyed or core-shells) were successfully synthesized using air-stable, safe reagents. Their optical pr

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5

Milnes, James. "The piezoelectric effect in II-VI semiconductors." Thesis, Heriot-Watt University, 1999. http://hdl.handle.net/10399/617.

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6

Luo, Ming. "Transition-metal ions in II-VI semiconductors ZnSe and ZnTe /." Morgantown, W. Va. : [West Virginia University Libraries], 2006. https://eidr.wvu.edu/etd/documentdata.eTD?documentid=4630.

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Thesis (Ph. D.)--West Virginia University, 2006.<br>Title from document title page. Document formatted into pages; contains xiv, 141 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 135-141).

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7

Meredith, Wyn. "II-VI blue emitting lasers and VCSELs." Thesis, Heriot-Watt University, 1997. http://hdl.handle.net/10399/695.

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8

Cairns, John William. "The interfaces of II-VI/III-V semiconductors." Thesis, Cardiff University, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.296381.

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9

Gabriel, Tim. "The electrodeposition of mesoporous type II-VI semiconductors." Thesis, University of Southampton, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.438733.

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10

Stevens, Christopher John. "Time-resolved spectroscopy of excitons in II-VI heterostructures." Thesis, University of Oxford, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.308909.

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11

McNamee, Michael Jonathan. "Optical studies of electronic excitations in II-VI semiconductors." Thesis, University of Oxford, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.359471.

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12

Urbaszek, Bernhard. "Fundamental studies of excitonic properties in II-VI semiconductors." Thesis, Heriot-Watt University, 2001. http://hdl.handle.net/10399/540.

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13

Walker, Nicholas J. "Nonlinear elastic and electrical behaviour in some (II-VI) and (IV-VI) semiconductors." Thesis, University of Bath, 1986. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.373402.

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14

Cheng, Hung Hsiang. "Magneto-optical studies of II-VI and III-V heterostructures." Thesis, University of Oxford, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.318838.

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15

Moreira, Wendel Lopes. "Síntese e estabilização de pontos quânticos coloidais de semicondutores II-VI e IV-VI." [s.n.], 2005. http://repositorio.unicamp.br/jspui/handle/REPOSIP/277440.

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Orientador: Carlos Lenz Cesar<br>Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Fisica<br>Made available in DSpace on 2018-08-04T09:35:25Z (GMT). No. of bitstreams: 1 Moreira_WendelLopes_M.pdf: 8515504 bytes, checksum: e80c0c01881efcfade7d7e39b55ade9a (MD5) Previous issue date: 2005<br>Resumo: Não informado<br>Abstract: Not informed.<br>Mestrado<br>Física da Matéria Condensada<br>Mestre em Física

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16

Romano, Ricardo. "Nanocompositos e nanoestruturas de semicondutores das familias II-VI e IV-VI." [s.n.], 2007. http://repositorio.unicamp.br/jspui/handle/REPOSIP/249039.

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Orientador: Oswaldo Luiz Alves<br>Tese (doutorado) - Universidade Estadual de Campinas, Instituto de Quimica<br>Made available in DSpace on 2018-08-08T20:29:31Z (GMT). No. of bitstreams: 1 Romano_Ricardo_D.pdf: 7756171 bytes, checksum: bd3a8af5af06fb7ec50b3cd881d41bfd (MD5) Previous issue date: 2007<br>Resumo: O desenvolvimento das nanoestruturas e suas aplicações compõem uma das áreas científicas em mais dinâmica ascensão. Grande parte dos estudos na área concentra-se nos métodos de preparação e, de uma forma geral, podem ser divididos em métodos físicos ou químicos. Os primeiros reúnem pro

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17

Tran, Tuyen K. "Optical properties of II-VI semiconductor materials and superlattice structures." Diss., Georgia Institute of Technology, 1996. http://hdl.handle.net/1853/30929.

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18

Wagner, Franz X. "Excimer laser ablation and processing of II-VI compound semiconductors." Thesis, University of Hull, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.363271.

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19

Blewett, Ian James. "Ultrafast nonlinear optical processes in wide-gap II-VI semiconductors." Thesis, Heriot-Watt University, 1996. http://hdl.handle.net/10399/754.

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20

Tookey, Andrew. "Ultrafast four-wave-mixing in wide-bandgap II-VI semiconductors." Thesis, Heriot-Watt University, 1998. http://hdl.handle.net/10399/1261.

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21

O'Donnell, Cormac Brendan. "MBE growth and characterisation of ZnSe-based II-VI semiconductors." Thesis, Heriot-Watt University, 2000. http://hdl.handle.net/10399/524.

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22

Horsfall, Alton Barrett. "Electrical and magnetic properties of II-VI diluted magnetic semiconductors." Thesis, Durham University, 1997. http://etheses.dur.ac.uk/4984/.

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The electrical and magnetic properties of MOVPE grown epitaxial layers of Hg(_1-x)Mn(_x)Te layers has been investigated using a number of techniques. The samples have been grown by the Inter Diffused Multilayer Process, (IMP) on (100) semi insulating GaAs substrates with ZnTe and CdTe buffer layers. The samples have been shown to show a number of phenomena nopt observed in the bulk material, such as an anomaly in the resistivity, rnagnetoresistance related to the intrinsic magnetism of the material, and saturation of the room temperature magnetisation. In general the samples are of a highly co

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23

Spellward, Paul. "Analytical electron diffraction from III-V and II-VI semiconductors." Thesis, University of Bristol, 1990. http://hdl.handle.net/1983/bf55826f-4baf-4e0c-abe8-de539218626e.

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This thesis describes the development and evaluation of a number of new TEM-based techniques for the measurement of composition in ternary III-V and II-VI semiconductors. New methods of polarity determination in binary and ternary compounds are also presented. The theory of high energy electron diffraction is outlined, with particular emphasis on zone axis diffraction from well-defined strings. An account of TEM microstructural studies of CdHg1-, Te and CdTe epitaxial layers, which provided the impetus for developing the diffraction-based analytical techniques, is given. The wide range of TEM-

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24

Cornet, i. Calveras Albert. "Estudio por medio de espectroscopia picosegundo de los compuestos II-VI sometidos a fuerte excitación óptica." Doctoral thesis, Universitat de Barcelona, 1987. http://hdl.handle.net/10803/665808.

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En la pasada década, se han observado nuevas bandas de luminescencia en los semiconductores cuando son excitados fuertemente por medio de láseres (fotoexcitacion). La interpretación del origen de estas bandas era variado y ha sido objeto de controversias y discusiones entre los diferentes autores. Finalmente, por medio de experiencias complementarias (efecto Raman, scattering con luz I.R., espectroscopia de excitación, fotoconducción)) se ha probado que en CuCl tiene lugar la formación de moleculas biexcitónicas y que en Ge y en Si, las altas excitaciones producen un plasma electrón-huec

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25

Parker, David. "Structure and photoelectrochemistry of nanostructured II-VI semiconductors for photovoltaic applications." Thesis, University of Bristol, 2015. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.681734.

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ZnO nanorods, sensitised to visible light using dyes, quantum dots, or thin films of low-bandgap semiconductors are commonly used as photoanodes in novel solar cells . They have a number of exciting properties for such an application. These include a direct conducting path for electrons, with few grain boundaries, and an increased surface area offering enhanced optical absorption. They are also able to sustain a depletion layer, the electric field this creates can effectively separate charge carriers at the nanorod/sensitiser interface, reducing recombination. However, despite these potential

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26

Lancaster, Adam. "Mid-IR waveguide lasers in transition metal doped II-VI semiconductors." Thesis, Heriot-Watt University, 2017. http://hdl.handle.net/10399/3342.

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This thesis focuses on the development of compact Mid-IR waveguide laser systems in transition metal doped II-VI semiconductors. These waveguide lasers have been developed to produce high brightness and compact sources in the Mid-IR. The wavelength tuneable operation of Cr:ZnSe waveguides was investigated. The waveguides were fabricated using ultrafast laser inscription. The waveguide laser demonstrated a tuning range of 2080 - 2883 nm, with more than 15 mW of output power across the full range. This resulted in a tuneable bandwidth of 39 THz, which is the widest range demonstrated by a Mid-IR

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27

Railson, Stuart Vaughan. "Optical spectroscopy of Cdâ†1â†â†â†xMnâ†xTe heterostructures." Thesis, University of East Anglia, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.318019.

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28

Alshawa, Amer K. "Luminescence properties of rare earth doped III-V and II-VI semiconductors." Ohio : Ohio University, 2000. http://www.ohiolink.edu/etd/view.cgi?ohiou1179167587.

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29

Adams, Richard Andrew. "Time resolved photoluminescence studies of the lasing mechanisms in II-VI semiconductors." Thesis, University of Oxford, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.360020.

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30

Rueda-Fonseca, Pamela. "Magnetic quantum dots in II-VI semiconductor nanowires." Thesis, Université Grenoble Alpes (ComUE), 2015. http://www.theses.fr/2015GRENY015/document.

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Dans ce travail de thèse a été développé et étudié un nouveau type d'objet semiconducteur magnétique : des boîtes quantiques de CdMnTe insérées dans des nanofils de ZnTe/ZnMgTe constituant une structure de type cœur-coquille. L'objectif était d'étudier la croissance par épitaxie par jets moléculaires et les propriétés fondamentales de ces hétéro-structures complexes. Dans ce but deux aspects principaux ont été abordés : i) la qualité et le contrôle des propriétés structurales, électroniques et magnétiques de ces objets, grâce à une maîtrise de leur croissance et ii) l'obtention d'informations

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31

Bensaid, Nacer-Eddine. "Use of phonon echoes in the study of II-VI compounds and dielectric Biâ†1â†2GeOâ†2â†0:Cr." Thesis, Lancaster University, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.293208.

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32

Little, Reginald Bernard. "The synthesis and characterization of some II-VI semiconductor quantum dots, quantum shells and quantum wells." Diss., Georgia Institute of Technology, 1999. http://hdl.handle.net/1853/30573.

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33

Shkurmanov, Alexander, Chris Sturm, Jörg Lenzner, et al. "Selective growth of tilted ZnO nanoneedles and nanowires by PLD of patterned sapphire substrates." Universitätsbibliothek Leipzig, 2016. http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-210898.

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We report the possibility to control the tilting of nanoneedles and nanowires by using structured sapphire substrates. The advantage of the reported strategy is to obtain well oriented growth along a single direction tilted with respect to the surface normal, whereas the growth in other directions is suppressed. In our particular case, the nanostructures are tilted with respect to the surface normal by an angle of 58°. Moreover, we demonstrate that variation of the nanostructures shape from nanoneedles to cylindrical nanowires by using SiO2 layer is observed.

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34

Khallaf, Hani. "Chemical Bath Deposition of Group II-VI Semiconductor Thin Films for Solar Cells Applications." Doctoral diss., University of Central Florida, 2009. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/2101.

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Chemical bath deposition (CBD) is the analog in liquid phase of the well-known chemical vapor deposition technique in the vapor phase. In CBD, deposition of thin films takes place from aqueous solutions at low temperatures by a chemical reaction between dissolved precursors, with the help of a complexing agent. Among all techniques used to grow Group II-VI semiconductors, CBD has the advantage of being a simple, low temperature, and inexpensive large-area deposition technique. So far, its contribution in thin film solar cells industry has been mainly limited to growing n-type CdS and/or ZnS wi

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35

Laura, M. Robinson. "USING TIME-RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY TO EXAMINE EXCITON DYNAMICS IN II-VI SEMICONDUCTOR NANOSTRUCTURES." University of Cincinnati / OhioLINK, 2001. http://rave.ohiolink.edu/etdc/view?acc_num=ucin980259259.

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36

Kumar, Vishwanath. "Characterization Of Large Area Cadmium Telluride Films And Solar Cells Deposited On Moving Substrates By Close Spaced Sublimation." [Tampa, Fla.] : University of South Florida, 2003. http://purl.fcla.edu/fcla/etd/SFE0000218.

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37

Godde, Tillmann [Verfasser], Ilya [Akademischer Betreuer] Akimov, and Thomas [Gutachter] Weis. "Dynamical properties of excitonic quasi-particles in II-VI semiconductors / Tillmann Godde. Betreuer: Ilya Akimov. Gutachter: Thomas Weis." Dortmund : Universitätsbibliothek Dortmund, 2013. http://d-nb.info/1101476524/34.

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38

Arnoult, Alexandre. "Dopage par modulation d'hétérostructures de semiconducteurs II-VI semimagnétiques en épitaxie par jets moléculaires." Université Joseph Fourier (Grenoble), 1998. http://www.theses.fr/1998GRE10237.

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Une etude theorique preliminaire a cette these a prevu que lorsque l'on introduit un gaz de trous bidimensionnel (2d) dans un puits quantique de semiconducteur semimagnetique, l'interaction entre les spins localises et les porteurs de charges induit une transition de phase ferromagnetique. Nous avons mis au point l'elaboration d'un tel systeme a base de tellurures en epitaxie par jets moleculaires, ainsi que la caracterisation au niveau microscopique des interfaces, du dopage et du transfert de porteurs dans le puits quantique. Ceci nous a permis d'elaborer des echantillons ayant donne lieu a

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39

Cremel, Thibault. "Vers une source de photons uniques opérationnelle à base de nanofils semiconducteurs." Thesis, Université Grenoble Alpes (ComUE), 2016. http://www.theses.fr/2016GREAY064/document.

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Le développement récent de la théorie quantique de l’information porte la communauté scientifique à s’intéresser de plus en plus aux sources de photons uniques. En effet, ces sources peuvent par exemple être utilisées pour le calcul quantique optique ou la cryptographie quantique pour améliorer les performances de distribution des clés et éviter les écoutes ou tentatives de hacking. Par conséquent, il est nécessaire de disposer de sources fiables et pour des applications réalistes, le défi est d'obtenir des sources de photons uniques qui fonctionnent jusqu'à température ambiante.Notre groupe à

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40

Baron, Thierry. "Dopage des semiconducteurs II-VI à base de tellure et réalisation de structures quantiques." Université Joseph Fourier (Grenoble ; 1971-2015), 1996. http://www.theses.fr/1996GRE10060.

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Nous avons etudie le dopage des semiconducteurs ii-vi a base de tellure. Concernant le dopage de type n, nous avons montre que l'impurete iode est mieux adaptee que l'impurete indium, pour atteindre de fortes concentrations de porteurs dans cdte et cdznte. Le dopage de type p est realise en utilisant une cellule dc plasma, permettant d'obtenir de l'azote sous forme atomique. En comparant les proprietes electriques, optiques et structurales de znte:n et de cdte:n, nous avons mis en evidence un phenomene de compensation limitant le niveau maximum de dopage accessible pour cdte:n. Afin de compren

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41

Gemain, Frédérique. "Etudes spectroscopiques du dopage dans les matériaux II-VI pour les détecteurs infrarouge et les cellules photovoltaïques." Phd thesis, Université de Grenoble, 2012. http://tel.archives-ouvertes.fr/tel-00849144.

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Ce travail de thèse présente les caractéristiques optiques et électriques de dopants dans des couches de CdHgTe, CdZnTe et CdS. Ces 3 matériaux II-VI ont pour point commun d'être utilisés dans des dispositifs de détection, que ce soit la détection de lumière infrarouge pour les couches de CdHgTe et CdZnTe ou la détection visible comme c'est le cas pour le CdS. La caractérisation optique de ces couches de matériaux II-VI a été réalisée par la technique de photoluminescence et corrélée à des mesures électriques effectuées par effet Hall en température. Dans un premier temps, une étude du dopage

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42

Fourreau, Yohan. "Study of the structural properties and defects in CdxHg1-xTe / Cd1-yZnyTe system and investigation of technological improvements for Infrared detection at high temperature." Electronic Thesis or Diss., Paris 6, 2016. https://accesdistant.sorbonne-universite.fr/login?url=https://theses-intra.sorbonne-universite.fr/2016PA066761.pdf.

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La problématique de qualité des images des composants matriciels IR refroidis, à base de matériaux II-VI, fait partie des enjeux critiques pour SOFRADIR. Positionnées dans un contexte très concurrentiel, cette problématique est exacerbée à hautes températures (HOT). Elle concerne en particulier les filières CdHgTe, confrontées à des instabilités en bruit de certains pixels, dits "clignotants", difficilement corrigibles. Des études internes à SOFRADIR montrent un fort degré de corrélation entre ce bruit spécifique et la défectivité (densité de dislocations) de la couche d’absorption CdHgTe. L’a

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43

Zuniga-Perez, Jesús, Lars Kappei, Christiane Deparis, et al. "Homoepitaxial nonpolar (10-10) ZnO/ZnMgO monolithic microcavities: Towards reduced photonic disorder." American Institute of Physics, 2016. https://ul.qucosa.de/id/qucosa%3A23543.

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Nonpolar ZnO/ZnMgO-based optical microcavities have been grown on (10-10) m-plane ZnO substrates by plasma-assisted molecular beam epitaxy. Reflectivity measurements indicate an exponential increase of the cavity quality factor with the number of layers in the distributed Bragg reflectors. Most importantly, microreflectivity spectra recorded with a spot size in the order of 2 lm show a negligible photonic disorder (well below 1 meV), leading to local quality factors equivalent to those obtained by macroreflectivity. The anisotropic character of the nonpolar heterostructures manifests itself bo

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44

Wille, Marcel, Tom Michalsky, Evgeny Krüger, Marius Grundmann, and Rüdiger Schmidt-Grund. "Absorptive lasing mode suppression in ZnO nano- and microcavities." American Institute of Physics, 2016. https://ul.qucosa.de/id/qucosa%3A23548.

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We conclusively explain the different lasing mode energies in ZnO nano- and microcavities observed by us and reported in literature. The limited penetration depth of usually used excitation lasers results in an inhomogeneous spatial gain region depending on the structure size and geometry. Hence, weakly or even nonexcited areas remain present after excitation, where modes are instantaneously suppressed by excitonic absorption. We compare the effects for ZnO microwires, nanowires, and tetrapod-like structures at room temperature and demonstrate that the corresponding mode selective effect is mo

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45

Eley, Clive William. "The rational design of photocatalytic semiconductor nanocrystals." Thesis, University of Oxford, 2014. http://ora.ox.ac.uk/objects/uuid:ee29c922-857c-432a-8316-a7e04c822b1d.

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This thesis reports the successful rational design of three highly active photocatalytic semiconductor nanocrystal (SNC) systems by exploiting morphology effects and the electronic properties of type II semiconductor heterojunctions. Novel architectures of colloidal SNCs are produced with the aim of suppressing exciton recombination and improving charge extraction for the successful initiation of desirable redox chemistry. Rod-shaped niobium pentoxide Nb<sub>2</sub>O<sub>5</sub> nanocrystals (NCs) are shown to exhibit significantly enhanced activity (10-fold increase in rate constant) relative

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46

Mordenti, Stéphane. "Etude magnéto-optique dans le proche infrarouge de systèmes bidimensionnels élaborés à partir d'alliages II-VI ou III-V." Université Joseph Fourier (Grenoble), 1997. http://www.theses.fr/1997GRE10127.

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Ce memoire presente des etudes magneto-optiques realisees dans le proche infrarouge de systemes bidimensionnels construits a partir des alliages cdhgte ou gainas. Les structures symetriques cd#yhg#1#-#yte/cd#xhg#1#-#yte ont ete etudiees sous champ magnetique (0,20 t) en luminescence et en abosorption. Les variations de formes quadratiques de la position des raies de luminescence sous champ montrent que la transition observee dans ce type de systemes fait intervenir une forte energie de liaison entre les porteurs des bandes de conduction et de valence. Nous l'avons d'ailleurs interpretee comme

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47

Charleux, Marion. "Étude par microscopie électronique d'hétérostructures de semiconducteurs II-VI élaborés par épitaxie par jets moléculaires alternés : vers la réalisation de fils quantiques." Grenoble INPG, 1997. http://www.theses.fr/1997INPG0045.

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Cette these est une etude par microscopie electronique en transmission (met) d'heterostructures de semiconducteurs ii-vi. Les systemes etudies, cdte/mnte et cdte/mgte, ont ete realises par epitaxie par jets moleculaires (ejm) et par epitaxie par jets moleculaires alternes (ejma). Le but de ce travail est de contribuer a la fabrication de structures quantiques unidimensionnelles ou fils quantiques : les resultats presentes dans ce memoire sont une premiere pour ces materiaux, bien qu'ils restent neanmoins encore loin de la perfection. En vue d'une optimisation des conditions de croissance, nous

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48

Gérard, Lionel. "Structures de semiconducteurs II-VI à alignements de bande de type II pour le photovoltaïque." Thesis, Grenoble, 2013. http://www.theses.fr/2013GRENY070.

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Ce travail porte sur l'étude d'hétérostructures de semiconducteurs II-VI à alignements de bande de type II, en particulier sous forme de superréseaux. Il s'agit d'un système qui peut être prometteur pour une application photovoltaïque, et c'est dans cette optique qu'est orienté ce travail. Une première partie traite ainsi d'une réflexion conceptuelle sur l'apport des interfaces de type II au photovoltaïque.Nous présentons ensuite une étude sur la croissance de CdSe et ZnTe par épitaxie par jets moléculaires, sur différents substrats. Ces matériaux sont particulièrement intéressants et adaptés

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49

Hervé, Denis. "Étude et réalisation d'un laser à semiconducteur compact de type à pompage électronique (par micropointes) émettant dans le visible (bleu)." Université Joseph Fourier (Grenoble ; 1971-2015), 1995. http://www.theses.fr/1995GRE10076.

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L'etude d'un laser a semiconducteur de type a pompage electronique est presentee. Le but de ce travail est la realisation d'un laser compact emettant dans le visible (bleu). Deux aspects distincts ont ete consideres. 1 le pompage electronique du laser ainsi que la realisation d'un dispositif compact. Le faisceau d'electrons permettant le pompage du laser est obtenu a partir d'une cathode comportant des micropointes. Ce composant est une source d'electrons froide, utilisant le principe de l'emission par effet de champ, realise grace aux procedes de la microelectronique conventionnelles et deja

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Graham, Timothy Carl Maxwell. "Spectroscopy of II-VI semiconductor quantum dots." Thesis, Heriot-Watt University, 2006. http://hdl.handle.net/10399/103.

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