Relevant bibliographies by topics / Si-Ge

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Si-Ge'

Author: Grafiati
Published: 28 May 2022
Last updated: 30 July 2025

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Journal articles on the topic "Si-Ge"

1

Párkányi, L., and A. Kálmán. "Close packing and isostructuralism of analogous Ph3X-X'R3compounds (R= Me:X= Si, Ge, Si, Ge, Sn, Ge,X' = Si, Si, Ge, Ge, Ge, Sn;R= Et:X= Ge, Si;X'= Si, Ge andR= Ph:X= Ge, Ge, Sn, Pb;X' = Ge, Pb, Pb, Pb)." Acta Crystallographica Section A Foundations of Crystallography 49, s1 (1993): c213. http://dx.doi.org/10.1107/s0108767378094039.

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Афанас’єва, Т. В., О. А. Гринчук, І. П. Коваль та М. Г. Находкін. "Структура чистих Si−Si, Ge−Ge та змішаних аддимерів Si−Ge на поверхні Si(001)". Ukrainian Journal of Physics 56, № 3 (2022): 240. http://dx.doi.org/10.15407/ujpe56.3.240.

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Використовуючи кластерні квантовохімічні та гібридні квантово-хімічні–молекулярно-механічні розрахунки з перших принципів (ab initio), досліджено адсорбцію Ge на поверхню Si(001). Розрахунки з врахуванням конфігураційної взаємодії (кв)використовувалися для визначання геометричної та електронної структури чистих Si–Si, Ge–Ge, та змішаних Si–Ge аддимерів на поверхні Si(001). Як чисті Si–Si, Ge–Ge, так і змішані Si–Ge аддимери – не нахилені до поверхні та носять бірадикальнийхарактер. Довжини зв'язків чистих Si–Si та змішаних Si–Ge аддимерів становлять 2,35 Å, 2,45 Å та 2,41 Å відповідно. Утворен
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Schilz, Jürgen, and Marion Langenbach. "Powder metallurgy of Ge, Si, and Ge-Si." Journal of Crystal Growth 128, no. 1-4 (1993): 1197–202. http://dx.doi.org/10.1016/s0022-0248(07)80123-0.

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Ko, Young-Jo, Kang-Ho Park, Jeong Sook Ha, and Wan Soo Yun. "Mixed Ge-Si Dimer Formation in Ge/Si(100) and Si/Ge(100) Growth." Japanese Journal of Applied Physics 39, Part 1, No. 7B (2000): 4295–97. http://dx.doi.org/10.1143/jjap.39.4295.

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Cho, Jun-Hyung, and Myung-Ho Kang. "Ge-Si intermixing at the Ge/Si(001) surface." Physical Review B 61, no. 3 (2000): 1688–91. http://dx.doi.org/10.1103/physrevb.61.1688.

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Boscherini, F., G. Capellini, L. Di Gaspare, et al. "Ge–Si intermixing in Ge quantum dots on Si." Thin Solid Films 380, no. 1-2 (2000): 173–75. http://dx.doi.org/10.1016/s0040-6090(00)01496-6.

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Owusu-Sekyere, Kofi, W. A. Jesser, and F. D. Rosi. "Characterization of SiGe and SiGeGaP thermoelements." Materials Science and Engineering: B 3, no. 3 (1989): 231–40. http://dx.doi.org/10.1016/0921-5107(89)90015-9.

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Brunner, Karl. "Si/Ge nanostructures." Reports on Progress in Physics 65, no. 1 (2001): 27–72. http://dx.doi.org/10.1088/0034-4885/65/1/202.

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Javan, Masoud Bezi. "Ge–Si and Si–Ge core–shell nanocrystals: Theoretical study." Thin Solid Films 589 (August 2015): 120–24. http://dx.doi.org/10.1016/j.tsf.2015.05.009.

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Soref, Richard A., and Lionel Friedman. "Direct-gap Ge/GeSn/Si and GeSn/Ge/Si heterostructures." Superlattices and Microstructures 14, no. 2-3 (1993): 189–93. http://dx.doi.org/10.1006/spmi.1993.1122.

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Dissertations / Theses on the topic "Si-Ge"

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Luan, Hsin-Chiao 1969. "Ge photodetectors for Si microphotonics." Thesis, Massachusetts Institute of Technology, 2001. http://hdl.handle.net/1721.1/8782.

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Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2001.<br>Includes bibliographical references (p. 143-157).<br>This thesis demonstrates the integration of pure Ge near-infrared photodetectors on Si. Ge epilayers were grown directly on Si by a two-step ultra-high-vacuum/chemical-vapor-deposition (UHV/CVD) process. This work conclusively proves that threading-dislocation densities in the Ge epilayers, measured both by plan-view transmission electron microscopy and etch-pit-density (EPD) counting, were reduced by cyclic thermal annealing. Addition
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Aubel, Dominique. "Apport des techniques de photoémission à la connaissance des hétérostructures Ge/Si(001), Si/Ge(001), Si1-xGex/Si(001) et Si1-xGex/Ge(001)." Mulhouse, 1995. http://www.theses.fr/1995MULH0412.

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Les premières phases de la croissance à température ambiante (TA) et 400°C des deux hétérostructures Si/Ge(001) et Ge/Si(001) ont été étudiées par des techniques de surface comme la spectroscopie de photoélectrons X(XPS) et UV(UPS) et la diffraction d'électrons lents (LEED). Un effort particulier a été fait pour développer la dernière née des méthodes d'investigations structurales dérivée de l'XPS à savoir la diffraction de photoélectrons X(XPD). L'analyse fine de l'émergence des signatures XFD et la mesure des contrastes sur les pics de diffusion vers l'avant en fonction du recouvrement, appo
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Yang, Chih Meng Atwater Harry Albert. "Manipulation of Si and Ge crystallization /." Diss., Pasadena, Calif. : California Institute of Technology, 1997. http://resolver.caltech.edu/CaltechETD:etd-01162008-112621.

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Gadea, Gerard. "Integration of Si/Si-Ge nanostructures in micro-thermoelectric generators." Doctoral thesis, Universitat de Barcelona, 2017. http://hdl.handle.net/10803/459243.

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Silicon and silicon-germanium nanostructures were grown, integrated, optimized and characterized for their application in thermoelectric generation. Specifically two kinds of nanostructures were worked: silicon and silicon-germanium nanowire arrays (Si/Si-Ge NW) and polycrystalline silicon nanotube fabrics (pSi NT). The results are dived in four chapters. Chapters 3, 4 and 5 deal with Si/Si-Ge NWs, while chapter 6 presents the pSi NT fabrics. In Chapter 3 the growth and integration of Si/Si-Ge NWs was studied, in order to optimize their properties for thermoelectric application in micro-th
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Дубина, В. М. "Термодинамічні властивості розплавів потрійних систем Ge(Si)-Mn-AI, Ge(Si)-Ga-Y та Al-Ga-Y". Дис. канд. хім. наук, КНУТШ, 2004.

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Teichmann, Marc. "Musterbildung auf Si- und Ge-Oberflächen durch niederenergetische Ionenstrahlerosion: Musterbildung auf Si- und Ge-Oberflächen durch niederenergetische Ionenstrahlerosion." Doctoral thesis, Leibniz-Institut für Oberflächenmodifizierung e. V, 2014. https://ul.qucosa.de/id/qucosa%3A13404.

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Die vorliegende Arbeit beschäftigt sich mit der Oberflächenglättung und selbstorganisierten Musterbildung auf Si(100) und Ge(100) durch Beschuss mit niederenergetischen Edelgasionen (Ne, Ar, Kr, Xe). Die Untersuchungen wurden für Ionenenergien zwischen 400 eV und 2000 eV für Ioneneinfallswinkel von 0° bis 85° durchgeführt. Zudem wurde die zeitliche Entwicklung spezifischer Erosionsformen durch die Variation der Fluenz über zwei Größenordnungen analysiert. In den Experimenten finden sich deutliche Anzeichen einer Facettierung sowie einer Vergröberung der Strukturen mit zunehmender Erosionszeit.
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White, Julian Darryn. "Phonons in (Si)_m/(Ge)_n superlattices." Thesis, University of Cambridge, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.239759.

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Camacho-Aguilera, Rodolfo Ernesto. "Ge-on-Si laser for silicon photonics." Thesis, Massachusetts Institute of Technology, 2013. http://hdl.handle.net/1721.1/82173.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2013.<br>This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.<br>Cataloged from student-submitted PDF version of thesis.<br>Includes bibliographical references (p. 253-263).<br>Ge-on-Si devices are explored for photonic integration. Importance of Ge in photonics has grown and through techniques developed in our group we demonstrated low density of dislocations (<1x109cm-2) and point defects Ge growth fo
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Okyay, Ali Kemal. "Si-Ge photodetection technologies for integrated optoelectronics /." May be available electronically:, 2007. http://proquest.umi.com/login?COPT=REJTPTU1MTUmSU5UPTAmVkVSPTI=&clientId=12498.

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BOIOLI, FRANCESCA. "Dislocation modelling in realistic Si-Ge nanostructures." Doctoral thesis, Università degli Studi di Milano-Bicocca, 2013. http://hdl.handle.net/10281/40115.

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SiGe heterostructures have gained a lot of interests in view of developing devices integrated into the main-stream Silicon technology and also from a scientific point of view as a prototypical system to understand the properties of more complex systems, such as III-V semiconductors. Si-Ge epitaxial structures, as well as other mismatched heteroepitaxial materials, have a high potential to improve the state-of-the-art of Si devices, thanks to the fact that the strain modifies the band structures of this material class, opening new possibility of band-gap engineering. Since the nineties, the d
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Books on the topic "Si-Ge"

1

Zheng, Yuan. Shi si ge ge. Xing He, 2000.

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Eliot, T. S. Si ge si chong zou. Lijiang chu ban she, 1985.

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Yukio, Mishima. Jin ge si. Gong ren chu ban she, 1988.

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Hui, Chen. Si ji ge. Tian di tu shu you xian gong si, 2000.

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Tang yue mei, 1931- ), ed. Jin ge si. Jiu zhou chu ban she, 2015.

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Yukio, Mishima. Jin ge si. Hua cheng tu shu, 2001.

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Yukio, Mishima. Jin ge si. Zuo jia chu ban she, 1995.

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Yukio, Mishima. Jin ge si. 7th ed. Da di chu ban she, 2000.

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te, Bo lang, and Xue hong shi. A ge ni si · ge lei. Yi lin chu ban she, 1999.

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Ling, Wang, ed. Si lu zhi ge. San min shu ju gu fen you xian gong si, 2013.

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Book chapters on the topic "Si-Ge"

1

Liu, Jifeng. "Ge-on-Si Lasers." In Photonics and Electronics with Germanium. Wiley-VCH Verlag GmbH & Co. KGaA, 2015. http://dx.doi.org/10.1002/9783527650200.ch12.

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Carow-Watamura, U., D. V. Louzguine, and A. Takeuchi. "Ge-Nb-Si (281)." In Physical Properties of Ternary Amorphous Alloys. Part 3: Systems from Cr-Fe-P to Si-W-Zr. Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14133-1_75.

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Carow-Watamura, U., D. V. Louzguine, and A. Takeuchi. "Ge-Pd-Si (283)." In Physical Properties of Ternary Amorphous Alloys. Part 3: Systems from Cr-Fe-P to Si-W-Zr. Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14133-1_77.

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Kasper, E., H. J. Herzog, and F. Schäffler. "Si/Ge Multilayered Structures." In Physics, Fabrication, and Applications of Multilayered Structures. Springer US, 1988. http://dx.doi.org/10.1007/978-1-4757-0091-6_11.

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Carow-Watamura, U., D. V. Louzguine, and A. Takeuchi. "Au-Ge-Si (101)." In Physical Properties of Ternary Amorphous Alloys. Part 1: Systems from Ag-Al-Ca to Au-Pd-Si. Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-03481-7_116.

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Pchelyakov, O. P., A. I. Nikiforov, B. Z. Olshanetsky, K. V. Romanyuk, and S. A. Teys. "Mbe Of Si — Ge Heterostructures With Ge Nanocrystals." In Towards the First Silicon Laser. Springer Netherlands, 2003. http://dx.doi.org/10.1007/978-94-010-0149-6_27.

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Cirlin, G. E., V. G. Talalaev, N. D. Zakharov, and P. Werner. "Si/Ge Nanostructures For Led." In Towards the First Silicon Laser. Springer Netherlands, 2003. http://dx.doi.org/10.1007/978-94-010-0149-6_9.

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Leadley, D., A. Dobbie, M. Myronov, V. Shah, and E. Parker. "Strained Si and Ge Channels." In Nanoscale CMOS. John Wiley & Sons, Inc., 2013. http://dx.doi.org/10.1002/9781118621523.ch3.

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Theodorou, G., and C. Tserbak. "Si/Ge Superlattices: A Step Towards Si-Based Optoelectronics." In Frontiers in Nanoscale Science of Micron/Submicron Devices. Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-009-1778-1_37.

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Latscha, Hans Peter, and Helmut Alfons Klein. "Kohlenstoffgruppe (C, Si, Ge, Sn, Pb)." In Anorganische Chemie. Springer Berlin Heidelberg, 2002. http://dx.doi.org/10.1007/978-3-662-05757-5_18.

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Conference papers on the topic "Si-Ge"

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Kalem, Seref. "Oxidation of Si/Ge nanowires grown wafers." In Oxide-based Materials and Devices XVI, edited by Féréchteh H. Teherani and David J. Rogers. SPIE, 2025. https://doi.org/10.1117/12.3041190.

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Isella, G., J. Osmond, M. Kummer, R. Kaufmann, and H. von Kanel. "Ge/Si." In 2006 International SiGe Technology and Device Meeting. IEEE, 2006. http://dx.doi.org/10.1109/istdm.2006.246584.

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Lin, C. H., and C. W. Liu. "MOS Si/Ge photodetectors." In Optics East 2006, edited by Joachim Piprek and Jian Jim Wang. SPIE, 2006. http://dx.doi.org/10.1117/12.684994.

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Nishibe, K., W. Jevasuwan, M. Mitome, Y. Bando, Zhong Lin Wang, and N. Fukata. "Growth and doping control of Ge/Si and Si/Ge core-shell nanowires." In 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)]. IEEE, 2016. http://dx.doi.org/10.1109/iciprm.2016.7528645.

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Chu, Chun-Lin, Guang-Li Luo, Shih-Hong Chen, Wei-Yuan Chang, Wen-Fa Wu, and Wen-Kuan Yeh. "The First Ge Nanosheets GAAFET CMOS Inverters Fabricated by 2D Ge/Si Multilayer Epitaxy, Ge/Si Selective Etching." In 2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA). IEEE, 2021. http://dx.doi.org/10.1109/vlsi-tsa51926.2021.9440077.

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Barletta, Philip, Geza Dezsi, Minjoo Lee, Changhyun Yi, and Rama Venkatasubramanian. "Si/Ge nanodot superlattices for Si-based photovoltaics." In SOUTHEASTCON 2010. IEEE, 2010. http://dx.doi.org/10.1109/secon.2010.5453843.

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Kang, Yimin, Mike Morse, Mario J. Paniccia, et al. "Monolithic Ge/Si avalanche photodiodes." In 2009 6th IEEE International Conference on Group IV Photonics (GFP). IEEE, 2009. http://dx.doi.org/10.1109/group4.2009.5338300.

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Liu, Jifeng, Xiaochen Sun, Rodolfo Camacho-Aguilera, Yan Cai, Lionel C. Kimerling, and Jurgen Michel. "Monolithic Ge-on-Si lasers." In Frontiers in Optics. OSA, 2010. http://dx.doi.org/10.1364/fio.2010.fmh1.

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Liu, Jifeng. "Ge-on-Si Integrated Photonics." In CLEO: Science and Innovations. OSA, 2014. http://dx.doi.org/10.1364/cleo_si.2014.sm3o.1.

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HARTUNG, Joachim, Victor HIGGS, G. DAVIES, E. C. LIGHTOWLERS, Vincent ARBET-ENGELS, and K. L. WANG. "Photoluminescence from Si/Ge Superlattices." In 1993 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1993. http://dx.doi.org/10.7567/ssdm.1993.pb-1-14.

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Reports on the topic "Si-Ge"

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Shum, Kai. Hot Electron Ge/Si Lasers. Defense Technical Information Center, 1997. http://dx.doi.org/10.21236/ada329725.

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Blake, P., and R. O. Scattergood. Diamond turning of Si and Ge single crystals. Office of Scientific and Technical Information (OSTI), 1988. http://dx.doi.org/10.2172/476637.

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Adamski, Joseph A., and John S. Bailey. Establish Methods for Crystal Growth of Si-Ge. Defense Technical Information Center, 1997. http://dx.doi.org/10.21236/ada337685.

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Kouvetakis, John, and J. Menendez. Next Generation, Si-Compatible Materials and Devices in the Si-Ge-Sn System. Defense Technical Information Center, 2015. http://dx.doi.org/10.21236/ad1003360.

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Wang, Kang L. Fundamental Properties and Device Applications of Ge(x)Si(1-x)/Si Superlattices. Defense Technical Information Center, 1990. http://dx.doi.org/10.21236/ada236098.

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Venkatasubramanian, R., T. Colpitts, E. Watko, and D. Malta. Experimental evidence of improved thermoelectric properties at 300K in Si/Ge superlattice structures. Office of Scientific and Technical Information (OSTI), 1997. http://dx.doi.org/10.2172/319833.

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Gyetvay, Sandra R., Dick J. Chang, and Rokuro Muki. Damage Modes and Mechanisms of Si-Ge Films under Prompt Soft X-Ray Radiation. Defense Technical Information Center, 1992. http://dx.doi.org/10.21236/ada253383.

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Greve, David W., and A. G. Milnes. Advanced Gas Phase Reactor for Growth of Ge sub x Si sub 1-x. Defense Technical Information Center, 1989. http://dx.doi.org/10.21236/ada219012.

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Strane, J. W., S. T. Picraux, H. J. Stein, et al. Stability and precipitation kinetics in Si{sub 1{minus}y}C{sub y}/Si and Si{sub 1{minus}x{minus}y}Ge{sub x}C{sub y}/Si heterostructures prepared by solid phase epitaxy. Office of Scientific and Technical Information (OSTI), 1993. http://dx.doi.org/10.2172/10122228.

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Aumann, C. E., Y. W. Mo, and M. G. Lagally. Diffraction Determination of the Structure of Metastable Three- Dimensional Crystals of Ge Grown on Si(001). Defense Technical Information Center, 1991. http://dx.doi.org/10.21236/ada236871.

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