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Dissertations / Theses on the topic 'SiC power MOSFET'

Author: Grafiati

Published: 14 March 2023

Last updated: 31 July 2025

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1

Linewih, Handoko, and h. linewih@griffith edu au. "Design and Application of SiC Power MOSFET." Griffith University. School of Microelectronic Engineering, 2003. http://www4.gu.edu.au:8080/adt-root/public/adt-QGU20030506.013152.

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This thesis focuses on the design of high voltage MOSFET on SiC and its application in power electronic systems. Parameters extraction for 4H SiC MOS devices is the main focus of the first topic developed in this thesis. Calibration of two-dimensional (2-D) device and circuit simulators (MEDICI and SPICE) with state-of-the-art 4H SiC MOSFETs data are performed, which includes the mobility parameter extraction. The experimental data were obtained from lateral N-channel 4H SiC MOSFETs with nitrided oxide-semiconductor interfaces, exhibiting normal mobility behavior. The presence of increasing in

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2

Linewih, Handoko. "Design and Application of SiC Power MOSFET." Thesis, Griffith University, 2003. http://hdl.handle.net/10072/367638.

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This thesis focuses on the design of high voltage MOSFET on SiC and its application in power electronic systems. Parameters extraction for 4H SiC MOS devices is the main focus of the first topic developed in this thesis. Calibration of two-dimensional (2-D) device and circuit simulators (MEDICI and SPICE) with state-of-the-art 4H SiC MOSFETs data are performed, which includes the mobility parameter extraction. The experimental data were obtained from lateral N-channel 4H SiC MOSFETs with nitrided oxide-semiconductor interfaces, exhibiting normal mobility behavior. The presence of increasing in

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3

Chen, Cheng. "Studies of SiC power devices potential in power electronics for avionic applications." Thesis, Université Paris-Saclay (ComUE), 2016. http://www.theses.fr/2016SACLN045.

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Mes travaux de thèse dans les laboratoires SATIE de ENS de Cachan et Ampère de l’INSA de Lyon se sont déroulés dans le cadre du projet Gestion OptiMisée de l'Energie (GENOME) pour étudier le potentiel de certains composants de puissance (JFET, MOSFET et BJT) en carbure de silicium (SiC) dans des convertisseurs électroniques de puissance dédiés à des applications aéronautiques suite au développement de l'avion plus électrique. La première partie de mes travaux étudie la robustesse de MOSFET et BJT en SiC soumis à des régimes de court circuit. Pour les MSOFET SiC, en soumettant ces transistors à

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4

Rajagopal, Narayanan. "Design of 1.7 kV SiC MOSFET Switching-Cells for Integrated Power Electronics Building Block (iPEBB)." Thesis, Virginia Tech, 2021. http://hdl.handle.net/10919/104148.

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The need for high-density power electronics converters becomes more critical by the day as energy consumption continues to grow across the world. Specifically, the need for medium-voltage (MV) high-density converters in power distribution systems, electric ships, and airplanes become more critical as weight and space becomes more a premium. The limited space and footprint require new packaging technologies and methods to develop an integrated power converter. The advancement of wide-bandgap (WBG) devices like silicon carbide (SiC) allows converters to have higher power and faster switching..

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Soler, Victor. "Design and process developments towards an optimal 6.5 kV SiC power MOSFET." Doctoral thesis, Universitat Politècnica de Catalunya, 2019. http://hdl.handle.net/10803/668916.

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A sustainable future requires efficient power electronic converters at any stage of the electrical energy consumption. Silicon carbide (SiC) is one of the most technologically advanced wide bandgap semiconductors that can outperform silicon limits for power devices. SiC power MOSFETs are of the greatest interest since they are unipolar gate-controlled switches with high blocking voltage capability and reasonably low specific on-resistance. The focus of this thesis is on the design optimisation and process technology refinement towards the improvement of high-voltage SiC MOSFETs. Previous devel

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6

Phankong, Nathabhat. "Characterization of SiC Power Transistors for Power Conversion Circuits Based on C-V Measurement." 京都大学 (Kyoto University), 2010. http://hdl.handle.net/2433/126807.

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7

DiMarino, Christina Marie. "High Temperature Characterization and Analysis of Silicon Carbide (SiC) Power Semiconductor Transistors." Thesis, Virginia Tech, 2014. http://hdl.handle.net/10919/78116.

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This thesis provides insight into state-of-the-art 1.2 kV silicon carbide (SiC) power semiconductor transistors, including the MOSFET, BJT, SJT, and normally-on and normally-off JFETs. Both commercial and sample devices from the semiconductor industry's well-known manufacturers were evaluated in this study. These manufacturers include: Cree Inc., ROHM Semiconductor, General Electric, Fairchild Semiconductor, GeneSiC Semiconductor, Infineon Technologies, and SemiSouth Laboratories. To carry out this work, static characterization of each device was performed from 25 ºC to 200 ºC. Dynamic charact

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8

STELLA, FAUSTO. "On-line Junction Temperature Estimation of SiC Power MOSFETs." Doctoral thesis, Politecnico di Torino, 2019. http://hdl.handle.net/11583/2734315.

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9

Francisco, sousa alves Luciano. "Series-connected SiC-MOSFETs : A Novel Multi-Step Packaging Concept and New Gate Drive Power Supply Configurations." Thesis, Université Grenoble Alpes, 2020. http://www.theses.fr/2020GRALT050.

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Ce travail de thèse étudie de nouvelles configurations d'alimentation de commande rapprochée et un nouveau concept de packaging afin d'améliorer les performances des MOSFETs SiC connectés en série. Les nouvelles configurations de commande rapprochée sont proposées afin de réduire les courants de bruit qui circulent dans la partie commande du système électrique. De plus, une nouvelle alimentation de commande de grille est proposée pour augmenter le dv / dt de la cellule de commutation. Ces améliorations, c'est-à-dire la réduction du courant de bruit et l'amplification du dv/dt, sont obtenues en

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10

Noborio, Masato. "Fundamental Study on SiC Metal-Insulator-Semiconductor Devices for High-Voltage Power Integrated Circuits." 京都大学 (Kyoto University), 2009. http://hdl.handle.net/2433/78006.

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11

Romero, Amy Marie. "Static and Dynamic Characterization of Silicon Carbide and Gallium Nitride Power Semiconductors." Thesis, Virginia Tech, 2018. http://hdl.handle.net/10919/93744.

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Wide-bandgap semiconductors have made and are continuing to make a major impact on the power electronics world. The most common commercially available wide-bandgap semiconductors for power electronics applications are SiC and GaN devices. This paper focuses on the newest devices emerging that are made with these wide-bandgap materials. The static and dynamic characterization of six different SiC MOSFETs from different manufacturers are presented. The static characterization consists of the output characteristics, transfer characteristics and device capacitances. High temperature (up to 150 °

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12

Laspeyres, Antoine. "Etude et conception d’un « Intelligent Power Module (IPM) » forte puissance en technologie SiC : développement du Gâte Driver." Electronic Thesis or Diss., Nantes Université, 2023. http://www.theses.fr/2023NANU4036.

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L’aéronautique tend à hybrider la propulsion et à électrifier de plus en plus de fonctions. Ceci entraîne une augmentation de la tension du réseau de bord HVDC afin de répondre à ces nouvelles contraintes sur les réseaux et systèmes électroniques. Pour atteindre ces objectifs, les nouveaux composants à semi-conducteurs de puissance SiC en calibre 3.3kV semblent être une alternative pro- metteuse à la filière Silicium IGBT. Cependant, leur faible maturité par rapport à la technologie Si est le principal frein à leur implémentation dans les réseaux de bords. Les travaux de recherche s’inscrivent

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13

Sun, Keyao. "Protection, Control, and Auxiliary Power of Medium-Voltage High-Frequency SiC Devices." Diss., Virginia Tech, 2021. http://hdl.handle.net/10919/103743.

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Due to the superior characteristics compared to its silicon (Si) counterpart, the wide bandgap (WBG) semiconductor enables next-generation power electronics systems with higher efficiency and higher power density. With higher blocking voltage available, WBG devices, especially the silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET), have been widely explored in various medium-voltage (MV) applications in both industry and academia. However, due to the high di/dt and high dv/dt during the switching transient, potential overcurrent, overvoltage, and gate failure can

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14

Sadik, Diane-Perle. "On Reliability of SiC Power Devices in Power Electronics." Doctoral thesis, KTH, Elkraftteknik, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-207763.

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Silicon Carbide (SiC) is a wide-bandgap (WBG) semiconductor materialwhich has several advantages such as higher maximum electric field, lowerON-state resistance, higher switching speeds, and higher maximum allowablejunction operation temperature compared to Silicon (Si). In the 1.2 kV - 1.7kV voltage range, power devices in SiC are foreseen to replace Si Insulatedgatebipolar transistors (IGBTs) for applications targeting high efficiency,high operation temperatures and/or volume reductions. In particular, theSiC Metal-oxide semiconductor field-effect transistor (MOSFET) – which isvoltage contro

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15

Cairnie, Mark A. Jr. "Bayesian Optimization of PCB-Embedded Electric-Field Grading Geometries for a 10 kV SiC MOSFET Power Module." Thesis, Virginia Tech, 2021. http://hdl.handle.net/10919/103566.

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A finite element analysis (FEA) driven, automated numerical optimization technique is used to design electric field grading structures in a PCB-integrated bus bar for a 10 kV bondwire-less silicon-carbide (SiC) MOSFET power module. Due to the ultra-high-density of the power module, careful design of field-grading structures inside the bus bar is required to mitigate the high electric field strength in the air. Using Bayesian optimization and a new weighted point-of-interest (POI) cost function, the highly non-uniform electric field is efficiently optimized without the use of field integration,

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16

Rong, Yu. "A Synchronous Distributed Control and Communication Network for High-Frequency SiC-Based Modular Power Converters." Thesis, Virginia Tech, 2019. http://hdl.handle.net/10919/96395.

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Numerous power electronics building blocks (PEBB) based power conversion systems have been developed to explore modular design, scalable voltage and current ratings, low-cost operations, etc. This paper further extends the modular concept from the power stage to the control system. The communication network in SiC-based modular power converters is becoming significant for distributed control architecture, with the requirements of tight synchronization and low latency. The influence of the synchronization accuracy on harmonics under the phase-shifted carrier pulse width modulation (PSC-PWM) is

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17

Kulisek, Jonathan Andrew. "The Effects of Nuclear Radiation on Schottky Power Diodes and Power MOSFETs." The Ohio State University, 2010. http://rave.ohiolink.edu/etdc/view?acc_num=osu1267502877.

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18

Mocevic, Slavko. "PCB-Embedded Phase Current Sensor and Short-Circuit Detector for High Power SiC-Based Converters." Thesis, Virginia Tech, 2018. http://hdl.handle.net/10919/84348.

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Nowadays, major public concern is concentrated on reducing the usage of fossil fuels and reducing emissions of CO2 by different energy advancement. Electric vehicle technology presents extremely effective way of reducing carbon emissions and paves the way of having sustainable and renewable energy future. In order to wear the cost of electric vehicles down, batteries have to be improved as well as higher power density and high reliability has to be achieved. This research work mainly focuses on achieving higher power density and higher reliability of the inverter stage by utilizing wide-bandga

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19

Dbeiss, Mouhannad. "Mission Profile-Based Accelerated Ageing Tests of SiC MOSFET and Si IGBT Power Modules in DC/AC Photovoltaic Inverters." Thesis, Université Grenoble Alpes (ComUE), 2018. http://www.theses.fr/2018GREAT020/document.

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Dans le cas des installations photovoltaïques, l’onduleur est le premier élément défaillant dont il est difficile d’anticiper la panne, et peu d’études ont été faites sur la fiabilité de ce type de convertisseur. L'objectif de cette thèse est de proposer des outils et méthodes en vue d'étudier le vieillissement des modules de puissance dans ce type d'application en se focalisant sur les phénomènes de dégradation liés à des aspects thermomécaniques. En règle générale, le vieillissement accéléré des modules de puissance est effectué dans des conditions aggravées de courant (Cyclage Actif) ou de

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20

Stackler, Caroline. "Transformateurs électroniques pour applications ferroviaires." Thesis, Toulouse, INPT, 2019. http://www.theses.fr/2019INPT0015.

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Actuellement, la majorité des convertisseurs embarqués dans des trains circulant sous une caténaire alternative est composée d’un transformateur basse fréquence, puis de redresseurs,alimentant des moteurs de traction via des onduleurs de traction. Les inconvénients majeurs de ces structures sont un volume et une masse embarqués importants, dus au transformateur fonctionnant en basse fréquence. Le rendement est également mauvais, à cause des contraintes de volume et de masse. Grâce aux développements des semiconducteurs haute tension et forte puissance et des transformateurs moyenne fréquence,

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21

Salinaro, Alberto Verfasser], Lothar [Gutachter] Frey, and Nando [Gutachter] [Kaminski. "Characterization and Development of the 4H-SiC/SiO2 Interface for Power MOSFET Applications / Alberto Salinaro ; Gutachter: Lothar Frey, Nando Kaminski." Erlangen : Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), 2016. http://d-nb.info/1118850076/34.

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22

Salinaro, Alberto [Verfasser], Lothar Gutachter] Frey, and Nando [Gutachter] [Kaminski. "Characterization and Development of the 4H-SiC/SiO2 Interface for Power MOSFET Applications / Alberto Salinaro ; Gutachter: Lothar Frey, Nando Kaminski." Erlangen : Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), 2016. http://d-nb.info/1118850076/34.

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23

Aviñó, Salvadó Oriol. "Contribution to the study of the SiC MOSFETs gate oxide." Thesis, Lyon, 2018. http://www.theses.fr/2018LYSEI110/document.

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Les MOSFET en SiC sont appelées à remplacer les IGBT en Silicium pour des applications de demandant une plus forte vitesse de commutation. Cependant, les MOSFET en SiC ont encore quelques problèmes de fiabilité, tels que la robustesse de la diode interne ou bien la robustesse de l'oxyde de grille. Cette dernière est liée à l’oxyde de grille des composants du type MOSFET. Des instabilités de la tension de seuil sont aussi signalées. Cette thèse aborde ces deux sujets sur des MOSFET commerciaux 1200 V. L'étude de la diode interne met en évidence que les caractéristiques I-V (de la diode intrinsè

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24

Watt, Grace R. "Impact of Device Parametric Tolerances on Current Sharing Behavior of a SiC Half-Bridge Power Module." Thesis, Virginia Tech, 2020. http://hdl.handle.net/10919/96559.

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This paper describes the design, fabrication, and testing of a 1.2 kV, 6.5 mΩ, half-bridge, SiC MOSFET power module to evaluate the impact of parametric device tolerances on electrical and thermal performance. Paralleling power devices increases current handling capability for the same bus voltage. However, inherent parametric differences among dies leads to unbalanced current sharing causing overstress and overheating. In this design, a symmetrical DBC layout is utilized to balance parasitic inductances in the current pathways of paralleled dies to isolate the impact of parametric tolerances.

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25

Molin, Quentin. "Contribution à l’étude de la robustesse des MOSFET-SiC haute tension : Dérive de la tension de seuil et tenue aux courts-circuits." Thesis, Lyon, 2018. http://www.theses.fr/2018LYSEI111.

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Ce manuscrit est une contribution à l’étude de la fiabilité et de la robustesse des composants MOSFET sur carbure de silicium, matériau semi-conducteur grand gap qui possède des caractéristiques bien meilleures que le silicium. Ces nouveaux interrupteurs de puissances permettent d’obtenir entre autres propriétés remarquables, des fréquences de commutations et des tenues en tension plus élevées dans les systèmes de conversions de puissance. Ils sont particulièrement mis en avant depuis un peu plus d’une dizaine d’années pour les gains en performances, diminution des tailles et poids qu’ils appo

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26

Barazi, Yazan. "Fast short-circuit protection for SiC MOSFETs in extreme short-circuit conditions by integrated functions in CMOS-ASIC technology." Thesis, Toulouse, INPT, 2020. http://www.theses.fr/2020INPT0091.

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Les transistors de puissance grands gaps tels que les MOSFETs SiC et HEMT GaN repoussent les compromis classiques en électronique de puissance. Brièvement, des gains significatifs ont été démontrés par les transistors SiC et GaN: meilleurs rendements, couplés à une augmentation des densités de puissance offertes par la montée en fréquence de découpage. Les MOSFET SiC à haute tension présentent des spécificités telles qu'une faible tenue en court-circuit (SC) par rapport aux IGBT Si et un oxyde de grille aminci, et une tension de commande rapprochée grillesource élevée. La polarisation négative

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Onambélé, Essono Ela Charles. "Conception de convertisseurs de puissance pour applications contraignantes." Electronic Thesis or Diss., Amiens, 2018. http://www.theses.fr/2018AMIE0013.

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L'utilisation de systèmes multiphasés de conversion électromécanique connaît une croissance continue dans divers domaines comme l'énergie et l'électrification des transports. Cette thèse vise à proposer des solutions technologiquement viables permettant de concevoir des convertisseurs de puissance adaptés à des applications contraignantes tant vis-à-vis des performances qu'à l'environnement physique: haut rendement, haute température ambiante, volume réduit, modularité, etc. Les technologies de composants semi - conducteurs à large bande interdite sont étudiées (carbure de silicium et nitrure

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28

Roder, Raphaël. "Intégration et fiabilité d'un disjoncteur statique silicium intelligent haute température pour application DC basse et moyenne tensions." Thesis, Bordeaux, 2015. http://www.theses.fr/2015BORD0287/document.

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Cette thèse présente l'étude et la réalisation d'un disjoncteur statique tout silicium et intelligent pouvant fonctionner à haute température (200°C) pour des applications de type DC basse et moyenne tensions. Plusieurs applications dans l’aéronautique, l’automobile et les transports ferroviaires poussent les composants à semi-conducteur de puissance à être utilisés à haute température. Cependant, les Si-IGBT et Si-CoolMOSTM actuellement commercialisés ont une température de jonction spécifiée et estimée à 150°C et quelque fois à 175°C. L’une des faiblesses des convertisseurs provient de la ré

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Santini, Thomas. "Contribution à l'étude de la fiabilité des MOSFETs en carbure de silicium." Thesis, Lyon, 2016. http://www.theses.fr/2016LYSEI021/document.

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Ces dernières années ont vu apparaître sur le marché les premiers transistors de puissance de type MOSFET en carbure de silicium. Ce type de composant est particulièrement adapté à la réalisation d’équipement électrique à haut rendement et capable de fonctionner à haute température. Néanmoins, la question de la fiabilité doit être posée avant de pouvoir envisager la mise en œuvre de ces composants dans des applications aéronautiques ou spatiales. Les mécanismes de défaillance liés à l’oxyde de grille ont pendant longtemps retardé la mise sur le marché des transistors à grille isolée en carbure

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30

Alhoussein, Ali. "Caractérisation et modélisation CEM des nouvelles technologie de composants de puissance (SIC). : Application : convertisseurs de puissance." Thesis, Normandie, 2020. http://www.theses.fr/2020NORMR043.

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Avec le développement des nouveaux composants de puissance à grand gap plus performants que leurs homologues en Silicium et l’intégration croissante de ces composants dans le véhicule électrique, la compatibilité électromagnétique est devenue un enjeu important pour le respect des normes de conformité en vigueur. La thèse traite donc les méthodes de modélisation haute fréquence des composants grand gap. Les problèmes liés à la fiabilité et la précision des modèles actuels sont mis en évidence. Ensuite, un nouveau modèle générique est proposé avec des formulations spécifiques lui permettant de

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31

Shah, Vatsal Sonikbhai. "Optimization and Up-Gradation of 3-Phase Half-Bridge Inverter Board." Thesis, Linköpings universitet, Elektroniska Kretsar och System, 2021. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-173664.

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Solar Bora AB is a Linköping based company that provides end to end solution for clean and reliable energy. System developed by them generates high power 230V AC to run electrical appliances. The system consist of string of batteries which are charged by rooftop solar cells and the energy stored in the batteries is converted to AC to provide a grid voltage like experience even though the system is not connected to a grid. Energy stored in the batteries need to be converted from DC to AC efficiently. Inverter used for conversion should be efficient enough to reduce losses. This master thesis de

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Niu, Shiqin. "Conception, optimisation et caractérisation d’un transistor à effet de champ haute tension en Carbure de Silicium." Thesis, Lyon, 2016. http://www.theses.fr/2016LYSEI136/document.

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La thèse intitulée "Conception, caractérisation et optimisation d’un transistor à effet de champ haute tension en Carbure de Silicium (SiC) et de leur diode associée", s’est déroulée au sein du laboratoire AMPERE sous la direction du Prof. D. PLANSON. Des premiers démonstrateurs de JFET ont été réalisés. Le blocage du JFET n'est pas efficace, ceci étant lié aux difficultés de réalisation technologique. Le premier travail a consisté en leur caractérisation précise puis en leur simulation, en tenant compte des erreurs de processus de fabrication. Ensuite, un nouveau masque a été dessiné en tenan

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33

Liebig, Sebastian. "Optimization of rectifiers for aviation regarding power density and reliability." Doctoral thesis, Universitätsbibliothek Chemnitz, 2015. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-159936.

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The intentions of the so-called "More Electrical Aircraft" (MEA) are higher efficiency and lower weight. A main topic here is the application of electrical instead of hydraulical, pneumatical and mechanical systems. The necessary power electronic devices have intermediate DC-links, which are typically supplied by a three-phase system with active B6 and passive B12 rectifiers. A possible alternative is the B6 diode bridge in combination with an active power filter (APF). Due to the parallel arrangement, the APF offers a higher power density and is able to compensate for harmonics from several d

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34

Xiangxiang, Fang. "Characterization and Modeling of SiC Power MOSFETs." The Ohio State University, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=osu1354687371.

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Liebig, Sebastian. "Optimization of rectifiers for aviation regarding power density and reliability." Doctoral thesis, Universitätsverlag der Technischen Universität Chemnitz, 2014. https://monarch.qucosa.de/id/qucosa%3A20187.

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The intentions of the so-called "More Electrical Aircraft" (MEA) are higher efficiency and lower weight. A main topic here is the application of electrical instead of hydraulical, pneumatical and mechanical systems. The necessary power electronic devices have intermediate DC-links, which are typically supplied by a three-phase system with active B6 and passive B12 rectifiers. A possible alternative is the B6 diode bridge in combination with an active power filter (APF). Due to the parallel arrangement, the APF offers a higher power density and is able to compensate for harmonics from several d

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36

Fayyaz, Asad. "Performance and robustness characterisation of SiC power MOSFETs." Thesis, University of Nottingham, 2018. http://eprints.nottingham.ac.uk/48937/.

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Over the last few years, significant advancements in the SiC power MOSFET fabrication technology has led to their wide commercial availability from various manufacturers. As a result, they have now transitioned from being a research activity to becoming an industrial reality. SiC power MOSFET technology offers great benefits in the electrical energy conversion domain which have been widely discussed and partially demonstrated. Superior material properties of SiC and the consequent advantages are both later discussed here. For any new device technology to be widely implemented in power electron

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Španěl, Petr. "Spínané zdroje." Doctoral thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2020. http://www.nusl.cz/ntk/nusl-433024.

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This thesis deals with switched mode power supplies based on resonant principle to achieve high efficiency. Several ways of switched mode power supplies optimalisation are described as part of the work to achieve better efficiency. Priparily, the new generation of switching elements based on SiC and resonant topology are used to achieve significant switching loss minimization. The selected resonant topology is simualted in detail and then built with focus on high efficiency. The main content of the work consists in the design and realization of the switched mode power supply with selected cont

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38

Ahmed, Ahmed Sabry Eltaher. "High-performance cooling of power semiconductor devices embedded in a printed circuit board." Electronic Thesis or Diss., Lyon, INSA, 2024. http://www.theses.fr/2024ISAL0100.

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L'intégration de dispositifs semi-conducteurs de puissance dans un circuit imprimé (PCB) est une solution prometteuse pour réduire les éléments parasites des circuits, simplifier le packaging des dispositifs et réduire les coûts. Cependant, la réduction continue de la taille des puces semi-conductrices, combinée à la faible conductivité thermique des couches diélectriques des PCB nécessitent des solutions de gestion thermique plus efficaces. Les solutions de gestion thermique et de refroidissement doivent offrir une faible résistance thermique entre la jonction de la puce et son environnement,

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39

Rong, Hua. "Development of 4H-SiC power MOSFETs for high voltage applications." Thesis, University of Warwick, 2015. http://wrap.warwick.ac.uk/79426/.

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Silicon carbide is a promising wide bandgap semiconductor for high-power, high-temperature and high frequency devices, owing to its high breakdown electric field strength, high thermal conductivity and ability to grow high quality SiO2 layers by thermal oxidation. Although the SiC power MOSFET (metal-oxide-semiconductor field effect transistor) is preferred as a power switch, it has suffered from low channel mobility with only single digit field effect mobility achieved using standard oxidation process (1200◦C thermal oxidation). As such, this thesis is focussed on the development of 4H-SiC MO

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Marzoughi, Alinaghi. "Investigating Impact of Emerging Medium-Voltage SiC MOSFETs on Medium-Voltage High-Power Applications." Diss., Virginia Tech, 2018. http://hdl.handle.net/10919/81822.

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For decades, the Silicon-based semiconductors have been the solution for power electronics applications. However, these semiconductors have approached their limits of operation in blocking voltage, working temperature and switching frequency. Due to material superiority, the relatively-new wide-bandgap semiconductors such as Silicon-Carbide (SiC) MOSFETs enable higher voltages, switching frequencies and operating temperatures when compared to Silicon technology, resulting in improved converter specifications. The current study tries to investigate the impact of emerging medium-voltage SiC MOSF

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Akram, Farhan. "Gate driver solutions for high power density SMPS using Silicon Carbide MOSFETs." Thesis, Mittuniversitetet, Institutionen för elektronikkonstruktion, 2021. http://urn.kb.se/resolve?urn=urn:nbn:se:miun:diva-41188.

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Discrete silicon carbide (SiC) power devices have unique characteristics that outpace those of silicon (Si) counterparts. The improved physical features have provided better faster switching, greater current densities, lower on-resistance, and temperature performances. However, there is lack of suitable commercial gate drivers that are compatible for high-voltage, and high-speed devices. There has been a great research effort required for the advancement of gate drivers for high voltage SiC transistors. A drive circuit for a SiC MOSFET needs to be optimized in normal operation to give best eff

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Gopalakrishna, Keshava. "Frequency Characterization of Si, SiC,and GaN MOSFETs Using Buck ConverterIn CCM as an Application." Wright State University / OhioLINK, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=wright1387661422.

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Gill, Lee. "Evaluation and Development of Medium-Voltage Converters Using 3.3 kV SiC MOSFETs for EV Charging Application." Thesis, Virginia Tech, 2019. http://hdl.handle.net/10919/93976.

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The emergence of wide-bandgap-based (WBG) devices, such as silicon carbide (SiC) and gallium nitride (GaN), have unveiled unprecedented opportunities, enabling the realization of superior power conversion systems. Among the potential areas of advancement are medium-voltage (MV) and high-voltage (HV) applications, due to the growing demand for high-power-density and high-efficiency power electronics converters. These advancements have propelled a wide adoption of electric vehicles (EV), which in the future will require great improvements in the charging time of these vehicles. Thereby, this the

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Ohn, Sungjae. "Circuits and Modulation Schemes to Achieve High Power-Density in SiC Grid-connected Converters." Diss., Virginia Tech, 2019. http://hdl.handle.net/10919/89550.

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The emergence of silicon-carbide (SiC) devices has been a 'game changer' in the field of power electronics. With desirable material properties such as low-loss characteristics, high blocking voltage, and high junction temperature operation, they are expected to drastically increase the power density of power electronics systems. Recent state-of-the-art designs show the power density over 17 ; however, certain factors limit the power density to increase beyond this limit. In this dissertation, three key factors are selected to increase the power density of SiC-based grid-connected three-phase

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Beydoun, Bilal. "Simulation et conception des transistors M. O. S. De puissance." Toulouse 3, 1994. http://www.theses.fr/1994TOU30163.

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Ce mémoire traite de la simulation et de la conception du transistor VDMOS de puissance. On propose un outil de conception de modèles pour ce transistor, qui est base d'une part sur l'analyse des mécanismes dont la structure est le siège, d'autre part sur la géométrie (layout) et la technologie, et enfin sur la prise en compte de la topologie d'un schéma équivalent établi antérieurement au laboratoire. Plus précisément, on effectue tout d'abord une étude des mécanismes-conduction, tenue en tension, étude dynamique-intervenant dans les diverses zones de la structure du composant. En se basant s

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Eial, Awwad Abdullah [Verfasser], Sibylle [Akademischer Betreuer] Dieckerhoff, Sibylle [Gutachter] Dieckerhoff, Regine [Gutachter] Mallwitz, and Uwe [Gutachter] Schäfer. "On the perspectives of SiC MOSFETs in high-frequency and high-power isolated DC/DC converters / Abdullah Eial Awwad ; Gutachter: Sibylle Dieckerhoff, Regine Mallwitz, Uwe Schäfer ; Betreuer: Sibylle Dieckerhoff." Berlin : Technische Universität Berlin, 2018. http://d-nb.info/116832405X/34.

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Chih-Pan, Yang, and 楊志潘. "Investigation of Device Structure and Application of SiC Power MOSFET." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/zbqtv3.

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碩士<br>國立交通大學<br>電子工程系所<br>92<br>The basic structure of power MOSFET consists of an epitaxial layer for voltage blocking and a drain electrode at the substrate contact. In the conventional double diffused MOSFET, the poor channel resistance and JFET effect limited the DIMOS performance. The trench gate MOSFET, have a much improved on-resistance and packing density because of its vertical channel, however, a high local electric field at the trench corner is of critical importance to the performance of the device. A innovative structure of SiC accumulation-mode MOSFET designed to improve the perf

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(11184465), Madankumar Sampath. "Deeply-Scaled Fully Self-Aligned Trench MOSFETs in 4H-SiC." Thesis, 2021.

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<p>Increasing demand for higher power density in many applications such as Hybrid Electric Vehicles (HEVs) and renewable power generation has led to great technological advances in power electronics. To meet this increasing demand, a power semiconductor device needs to have low on resistance, increased switching speeds and reduced total system cost. Silicon (Si) power devices have been used for several decades but they are fundamentally limited by material properties. Silicon carbide (SiC) as a power semiconductor material offers superior electrical and thermal properties compared to silicon,

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(9115403), Rahul Padavagodu ramamurthy. "VERTICAL TRIGATE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR IN 4H - SILICON CARBIDE." Thesis, 2020.

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<p>Advances in modern technology and recent demand for high power applications have motivated great interest in power electronics. Power semiconductor devices are key components that have enabled significant advances in power electronic systems. Historically, silicon has been the material of choice for power semiconductor devices such as diodes, transistors and thyristors. However, silicon devices are now reaching their fundamental limits, and a transition to wide bandgap semiconductors is critical to make further progress in the field. Among them, SiC (silicon carbide) has attracted increasi

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MAZZA, BRUNA. "Defects and traps electrical characterization in 4H-SiC PowerMOSFET." Doctoral thesis, 2021. http://hdl.handle.net/11570/3214439.

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In this thesis work, the methods used to investigate Silicon Carbide defects and the energy levels associated with them are presented. Different measurement methods will be presented to characterize the so-called "fixed charges" in gate oxide and "interface charges" in SiO2/SiC interface in 4H-SiC power MOSFET devices. These methods are effective both to be able to identify these charges, which are nothing more than defects in the material, such as the Capacitance-Voltage (CV) and conductance (GV) techniques, and to be able to qualify SiC devices in terms of reliability, for example Time Depen

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