Log in

Relevant bibliographies by topics / SiC power MOSFET / Journal articles

To see the other types of publications on this topic, follow the link: SiC power MOSFET.

Journal articles on the topic 'SiC power MOSFET'

Author: Grafiati

Published: 14 March 2023

Last updated: 31 July 2025

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 50 journal articles for your research on the topic 'SiC power MOSFET.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse journal articles on a wide variety of disciplines and organise your bibliography correctly.

1

Lichtenwalner, Daniel J., Brett Hull, Vipindas Pala, et al. "Performance and Reliability of SiC Power MOSFETs." MRS Advances 1, no. 2 (2016): 81–89. http://dx.doi.org/10.1557/adv.2015.57.

Full text

Abstract:

ABSTRACTDue to the wide bandgap and other key materials properties of 4H-SiC, SiC MOSFETs offer performance advantages over competing Si-based power devices. For example, SiC can more easily be used to fabricate MOSFETs with very high voltage ratings, and with lower switching losses. Silicon carbide power MOSFET development has progressed rapidly since the market release of Cree’s 1200V 4H-SiC power MOSFET in 2011. This is due to continued advancements in SiC substrate quality, epitaxial growth capabilities, and device processing. For example, high-quality epitaxial growth of thick, low-doped

APA, Harvard, Vancouver, ISO, and other styles

2

Li, Ruizhe. "The advantages and short circuit characteristics of SiC MOSFETs." Applied and Computational Engineering 49, no. 1 (2024): 58–64. http://dx.doi.org/10.54254/2755-2721/49/20241059.

Full text

Abstract:

SiC MOSFETs have exhibited considerable benefits in high-frequency, high-voltage, and high-temperature power electronics applications with outstanding material attributes as a result of the rapid advancement of power electronics technology. SiC MOSFETs slower short-circuit tolerance and faster switching rates provide new issues for the short-circuit prevention technology. In the opening section of the study, Si and SiC MOSFETs are compared and evaluated using various models and parametric factors. It has been demonstrated that SiC MOSFETs outperform Si MOSFETs in a variety of conditions and ap

APA, Harvard, Vancouver, ISO, and other styles

3

Hsu, Fu Jen, Cheng Tyng Yen, Hsiang Ting Hung, Jia Wei Hu, and Chih Fang Huang. "High Density 65W AC-DC Adaptor Enabled by SiC MOSFET with Ultralow V<sub>GS(on)</sub>." Key Engineering Materials 948 (June 6, 2023): 89–93. http://dx.doi.org/10.4028/p-tuypqj.

Full text

Abstract:

SiC MOSFETs are rarely used in low-power consumer applications because of their cost and gate driving circuitry requirement. In this work, a cost-efficient SiC MOSFET with a usable 10V of VGS is proposed. The proposed SiC MOSFET could enable low-power applications, which is around tens to hundreds of watt, to implement SiC MOSFETs. As a result, the thermal performance is better than the GaN solution thanks to the better thermal conductance of the SiC.

APA, Harvard, Vancouver, ISO, and other styles

4

Funaki, Tsuyoshi, Yuki Nakano, and Takashi Nakamura. "Comparative Study of SiC MOSFETs in High Voltage Switching Operation." Materials Science Forum 717-720 (May 2012): 1081–84. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1081.

Full text

Abstract:

SiC power device is expected to have high breakdown voltage with low on resistance, which cannot be attainable for conventional Si device. This study evaluates the switching performance of high voltage SiC MOSFETs with comparing to that of conventional Si power MOSFET having equivalent breakdown voltage. To this end, turn-on and turn-off switching operation of MOSFETs are assessed with resistive load for same conduction current density. Though the on resistance of SiC MOSFETs are quite lower than Si MOSFET, especially for trench gate type. But, SiC MOSFETs have larger terminal capacitance. The

APA, Harvard, Vancouver, ISO, and other styles

5

Kong, Moufu, Zewei Hu, Ronghe Yan, Bo Yi, Bingke Zhang, and Hongqiang Yang. "A novel SiC high-k superjunction power MOSFET integrated Schottky barrier diode with improved forward and reverse performance." Journal of Semiconductors 44, no. 5 (2023): 052801. http://dx.doi.org/10.1088/1674-4926/44/5/052801.

Full text

Abstract:

Abstract A new SiC superjunction power MOSFET device using high-k insulator and p-type pillar with an integrated Schottky barrier diode (Hk-SJ-SBD MOSFET) is proposed, and has been compared with the SiC high-k MOSFET (Hk MOSFET), SiC superjuction MOSFET (SJ MOSFET) and the conventional SiC MOSFET in this article. In the proposed SiC Hk-SJ-SBD MOSFET, under the combined action of the p-type region and the Hk dielectric layer in the drift region, the concentration of the N-drift region and the current spreading layer can be increased to achieve an ultra-low specific on-resistance (R on,sp). The

APA, Harvard, Vancouver, ISO, and other styles

6

Qiu, Guoqing, Kedi Jiang, Shengyou Xu, Xin Yang, and Wei Wang. "Modeling and analysis of the characteristics of SiC MOSFET." Journal of Physics: Conference Series 2125, no. 1 (2021): 012051. http://dx.doi.org/10.1088/1742-6596/2125/1/012051.

Full text

Abstract:

Abstract Although the superior performance of SiC MOSFET devices has beenvalidated by many studies, it is necessary to overcome many technical bottlenecks to make SiC MOSFET gradually replace Si-based power devices into the mainstream. In view of the current situation where the performance of SiC MOSFETs in power conversion devices cannot be evaluated well at this stage, it is necessary to carry out fine modeling of SiC MOSFETs and establish accurate simulation models. In this paper, the powerful mathematical processing capability and rich modules of Matlab/Simulink are used to build a SiC MOS

APA, Harvard, Vancouver, ISO, and other styles

7

Green, Ronald, Aivars J. Lelis, and Daniel B. Habersat. "Charge Trapping in Sic Power MOSFETs and its Consequences for Robust Reliability Testing." Materials Science Forum 717-720 (May 2012): 1085–88. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1085.

Full text

Abstract:

Threshold voltage (VT) instability remains an important issue for the performance, reliability, and qualification of SiC power MOSFET devices. The direct application of existing reliability test standards to SiC power MOSFETs can in some cases result in an inconsistent pass/fail response for a given device. To ensure SiC MOSFET device reliability, some modifications to existing test methods may be necessary..

APA, Harvard, Vancouver, ISO, and other styles

8

Matocha, Kevin, Peter A. Losee, Arun Gowda, et al. "Performance and Reliability of SiC MOSFETs for High-Current Power Modules." Materials Science Forum 645-648 (April 2010): 1123–26. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.1123.

Full text

Abstract:

We address the two critical challenges that currently limit the applicability of SiC MOSFETs in commercial power conversion systems: high-temperature gate oxide reliability and high total current rating. We demonstrate SiC MOSFETs with predicted gate oxide reliability of >106 hours (100 years) operating at a gate oxide electric field of 4 MV/cm at 250°C. To scale to high total currents, we develop the Power Overlay planar packaging technique to demonstrate SiC MOSFET power modules with total on-resistance as low as 7.5 m. We scale single die SiC MOSFETs to high currents, demonstrating a la

APA, Harvard, Vancouver, ISO, and other styles

9

van Zeghbroeck, Bart, and Hamid Fardi. "Comparison of 3C-SiC and 4H-SiC Power MOSFETs." Materials Science Forum 924 (June 2018): 774–77. http://dx.doi.org/10.4028/www.scientific.net/msf.924.774.

Full text

Abstract:

A comprehensive comparison of 3C-SiC and 4H-SiC power MOSFETs was performed, aimed at quantifying and comparing the devices’ on-resistance and switching loss. To this end, the relevant material parameters were collected using experimental data where available, or those obtained by simulation. This includes the bulk mobility as a function of doping density, the breakdown field as a function of doping and the MOSFET channel mobility. A device model was constructed and then used to calculate the on-resistance and breakdown voltage of a properly scaled device as a function of the doping density of

APA, Harvard, Vancouver, ISO, and other styles

10

Han, Ki Jeong, B. Jayant Baliga, and Woong Je Sung. "1.2 kV 4H-SiC Split-Gate Power MOSFET: Analysis and Experimental Results." Materials Science Forum 924 (June 2018): 684–88. http://dx.doi.org/10.4028/www.scientific.net/msf.924.684.

Full text

Abstract:

This paper presents a 1.2kV-rated 4H-SiC Split-Gate power MOSFET (SG-MOSFET) with superior high frequency figures-of-merit (HF-FOM). Electrical characteristics including reverse transfer capacitance and gate-to-drain charge are measured from fabricated devices on a 6-inch SiC wafer, demonstrating excellent performance. Compared to the conventional MOSFETs, the SG-MOSFET provides about 7x smaller HF-FOM [RonxCgd] and 2x smaller HF-FOM [RonxQgd] with improved reverse transfer capacitance and gate-to-drain charge.

APA, Harvard, Vancouver, ISO, and other styles

11

Langpoklakpam, Catherine, An-Chen Liu, Kuo-Hsiung Chu, et al. "Review of Silicon Carbide Processing for Power MOSFET." Crystals 12, no. 2 (2022): 245. http://dx.doi.org/10.3390/cryst12020245.

Full text

Abstract:

Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage, higher thermal conductivity, higher operating frequency, higher operating temperature, and higher saturation drift velocity, SiC has attracted much attention from researchers and the industry for decades. With the advances in material science and processing technology, many power applications such as new smart energy vehicles, power converters, inverters, and power supplies are being realized using SiC power devices. In particular, SiC MOSFETs are generally chosen to be used as a power device due to th

APA, Harvard, Vancouver, ISO, and other styles

12

Noor, Anis Sofea Binti Mohd, Thikra S. Dhahi, Siti Fatimah Abd Rahman, Mohd Rosydi Zakaria, M. F. M. Fathil, and Mohamed Fauzi Packeer Mohamed. "Silicon Carbide MOSFET based Inverter for Smart Power Switch." Journal of Physics: Conference Series 3020, no. 1 (2025): 012013. https://doi.org/10.1088/1742-6596/3020/1/012013.

Full text

Abstract:

Abstract This research investigates the comparative analysis of Silicon Carbide (SiC) and Silicon (Si) MOSFET based inverter focusing on switching losses, conduction losses, and power losses. While Si has been the traditional semiconductor material, it has limitations in power losses which affecting the efficiency and reliability of the system. Si MOSFETs face challenges such as slow switching speeds and inherent conduction losses, leading to a significant power loss. In contrast, SiC is a promising alternative due to its superior physical properties including a higher breakdown electric field

APA, Harvard, Vancouver, ISO, and other styles

13

Xu, Yige. "Applications and challenges of Silicon Carbide (SiC) MOSFET technology in electric vehicle propulsion systems: A review." Applied and Computational Engineering 40, no. 1 (2024): 180–86. http://dx.doi.org/10.54254/2755-2721/40/20230647.

Full text

Abstract:

Silicon Carbide (SiC) MOSFET technology plays a pivotal role in the drive systems of electric vehicles (EVs), offering key applications and facing significant challenges. This paper provides an overview of the fundamental principles and characteristics of SiC MOSFETs, highlighting the unique properties of SiC materials. It delves into the critical applications of SiC MOSFETs in electric vehicle drive systems, including motor drives and inverters, and analyzes the advantages of using SiC MOSFETs for efficient energy conversion at high temperatures. The paper also discusses the key challenges fa

APA, Harvard, Vancouver, ISO, and other styles

14

Müting, Johanna, Bhagyalakshmi Kakarla, and Ulrike Grossner. "Comprehensive and Detailed Study on the Modeling of Commercial SiC Power MOSFET Devices Using TCAD." Materials Science Forum 897 (May 2017): 553–56. http://dx.doi.org/10.4028/www.scientific.net/msf.897.553.

Full text

Abstract:

The main scattering mechanisms reducing the channel mobility and thus the typical performance of a SiC power MOSFET are reviewed. It is demonstrated that the Poisson equation within the drift-diffusion model is able to account for the effects of ionized impurity scattering. Furthermore, a correlation between the size of macro-or nanosteps at the SiC/SiO2 interface and the corresponding fitting parameter within the Lombardi surface roughness model is established. By qualitatively reproducing the typical performance of a commercial SiC power MOSFET a baseline for the TCAD modeling of power MOSFE

APA, Harvard, Vancouver, ISO, and other styles

15

Yang, Dong, Stephan Wirths, Lars Knoll, Yi Han, Dan Mihai Buca, and Qing Tai Zhao. "Enhanced Device Performance with Vertical SiC Gate-All-Around Nanowire Power MOSFETs." Key Engineering Materials 945 (May 19, 2023): 77–82. http://dx.doi.org/10.4028/p-0ta22r.

Full text

Abstract:

SiC gate-all-around (GAA) nanowire (NW) MOSFET is one of the most promising device architectures for the next generation of SiC power MOSFETs. This work reveals the great application potential of vertical SiC GAA NW power MOSFETs via TCAD simulation. The investigated devices show higher channel electron mobility (µch) and larger channel carrier density (nch) compared to the conventional SiC power MOSFET. Scaling down of NW diameter (DNW) is beneficial in terms of both, lowering channel resistance (Rch) via improving nch and, increasing breakdown voltage (Vb) by modifying electric field distrib

APA, Harvard, Vancouver, ISO, and other styles

16

Kampitsis, Georgios E., Stavros A. Papathanassiou, and Stefanos N. Manias. "Comparative Analysis of the Thermal Stress of Si and SiC MOSFETs during Short Circuits." Materials Science Forum 856 (May 2016): 362–67. http://dx.doi.org/10.4028/www.scientific.net/msf.856.362.

Full text

Abstract:

In this paper, the performance of silicon (Si) and silicon carbide (SiC) power MOSFETs during short circuits is investigated. The response of both semiconductors is examined under hard switch fault and fault under load conditions using a short circuit tester board. In addition, their failure mechanism is recorded and analyzed. Examination results show that the SiC MOSFET fails in the energy limiting mode, due to gate oxide rupture, while the Si MOSFET is destructed during the power limiting mode, at the beginning of the fault. The electro-thermal characterization of these devices is performed

APA, Harvard, Vancouver, ISO, and other styles

17

Grome, Christopher A., and Wei Ji. "A Brief Review of Single-Event Burnout Failure Mechanisms and Design Tolerances of Silicon Carbide Power MOSFETs." Electronics 13, no. 8 (2024): 1414. http://dx.doi.org/10.3390/electronics13081414.

Full text

Abstract:

Radiation hardening of power MOSFETs (metal oxide semiconductor field effect transistors) is of the highest priority for sustaining high-power systems in the space radiation environment. Silicon carbide (SiC)-based power electronics are being investigated as a strong alternative for high power spaceborne power electronic systems. SiC MOSFETs have been shown to be most prone to single-event burnout (SEB) from space radiation. The current knowledge of SiC MOSFET device degradation and failure mechanisms are reviewed in this paper. Additionally, the viability of radiation tolerant SiC MOSFET desi

APA, Harvard, Vancouver, ISO, and other styles

18

Xie, Li Jun, Jin Yuan Li, and Kun Shan Yu. "Study on Loss Calculation for Inverter Based on 1200V SiC MOSFET." Applied Mechanics and Materials 672-674 (October 2014): 906–13. http://dx.doi.org/10.4028/www.scientific.net/amm.672-674.906.

Full text

Abstract:

SiC MOSFETs are expected as one of next generation power devices for their superior performances compared with conventional Si power devices and have become one of the new promising substitude to Si devices. The characteristics of 1200V SiC MOSFET are presented first and the power losses analysis model of SiC devices are given. As losses of power devices are essential parameters in converter design, the power dissipation of SiC MOSFET in SPWM inverter are calculated. In this paper, whether a free-wheeling-diode necessary is illustrated from the point of power dissipation and choice is made bas

APA, Harvard, Vancouver, ISO, and other styles

19

Lichtenwalner, Daniel J., Akin Akturk, James McGarrity, et al. "Reliability of SiC Power Devices against Cosmic Ray Neutron Single-Event Burnout." Materials Science Forum 924 (June 2018): 559–62. http://dx.doi.org/10.4028/www.scientific.net/msf.924.559.

Full text

Abstract:

High-energy neutrons produced by cosmic ray interactions with our atmosphere are known to cause single-event burnout (SEB) failure in power devices operating at high fields. We have performed accelerated high-energy neutron SEB testing of SiC and Si power devices at the Los Alamos Neutron Science Center (LANCSE). Comparing Wolfspeed SiC MOSFETs having different voltage (900V – 3300V) and current (3.5A – 72A) ratings, we find a universal behavior when scaling failure rates by active area, and scaling drain bias by avalanche voltage. Moreover, diodes and MOSFETs behave similarly, revealing that

APA, Harvard, Vancouver, ISO, and other styles

20

Che, Haoming. "Simulation study on dynamic characteristics of SiC MOSFET." Theoretical and Natural Science 5, no. 1 (2023): 805–14. http://dx.doi.org/10.54254/2753-8818/5/20230507.

Full text

Abstract:

In this paper, the third generation power MOSFET is introduced, and the physical model based on silicon based MOSFET is improved for SiC MOSFET, and the commercial planar gate and trench gate 1.2kV SiC MOSFET are simulated. The accuracy of physical modals is tested by comparing the static characteristics with commercial ones. The dynamic characteristics of two MOSFETs are simulated by inductively clamped double pulse circuit, and the circuit parameters are analyzed according to the static characteristics of the devices. The switching loss of the two MOSFETs is calculated and compared by using

APA, Harvard, Vancouver, ISO, and other styles

21

Wang, Min, Sijie Zhao, Yaqian Li, Zan Li, and Lipei Zhang. "Feasibility study of wide bandgap power devices in space solar power station applications." Advances in Engineering Innovation 16, no. 1 (2025): 35–42. https://doi.org/10.54254/2977-3903/2025.21380.

Full text

Abstract:

This paper focuses on the reliability and radiation effects of wide bandgap SiC MOSFET power devices. Based on the failure issues of SiC MOSFET power devices used in space solar power stations, the paper investigates the feasibility of applying SiC MOSFET power devices in space solar power stations. By examining the failure mechanisms of wide bandgap SiC MOSFET power devices, the paper proposes reinforcement methods for radiation resistance and high reliability from both device and circuit application perspectives, providing feasible solutions for the use of these devices in space solar power

APA, Harvard, Vancouver, ISO, and other styles

22

QIU Yiwu, LIANG Di, YIN Yanan, DONG Lei, WANG Tao, and ZHOU Xinjie. "Research progress on single event effect and hardening technology of SiC power MOSFET." Acta Physica Sinica 74, no. 13 (2025): 0. https://doi.org/10.7498/aps.74.20250273.

Full text

Abstract:

In extreme radiation environments, such as space nuclear reactor systems, deep-space probe power modules, and launch vehicle propulsion systems, high-voltage and high-power devices demonstrate significant practical value. Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) possess advantages including high breakdown voltage, thermal stability, and low on-state resistance, enabling further improvements in aerospace power supply efficiency. Therefore, research on radiation effects and radiation-hardening techniques for SiC power MOSFETs has rapidly emerged as a cri

APA, Harvard, Vancouver, ISO, and other styles

23

Umegami, Hirokatsu, Toshikazu Harada, and Ken Nakahara. "Performance Comparison of Si IGBT and SiC MOSFET Power Module Driving IPMSM or IM under WLTC." World Electric Vehicle Journal 14, no. 4 (2023): 112. http://dx.doi.org/10.3390/wevj14040112.

Full text

Abstract:

The cumulative inverter losses and power consumption of a silicon insulated gate bipolar transistor (Si IGBT) and three types of silicon carbide metal-oxide-semiconductor field-effect transistors (SiC MOSFETs) were evaluated on an electric motor test bench under a worldwide harmonized light vehicles test cycle (WLTC). SiC MOSFETs showed higher performance than Si IGBT regardless of the motor type and test vehicles. In the case of driving an interior permanent magnet synchronous motor (IPMSM), the latest 4th generation SiC MOSFET (SiC-4G) in ROHM has the lowest inverter loss and energy consumpt

APA, Harvard, Vancouver, ISO, and other styles

24

Sato, Shinji, Fumiki Kato, Hidekazu Tanisawa, et al. "Development of a High-Speed Switching Silicon Carbide Power Module." Materials Science Forum 963 (July 2019): 864–68. http://dx.doi.org/10.4028/www.scientific.net/msf.963.864.

Full text

Abstract:

We developed a silicon carbide (SiC) power module that can switch large currents at high speed. The withstand voltage of this power module is 1200 V, and two SiC MOSFETs are built-in and constitute a circuit for one inverter phase. This power module incorporates a snubber circuit for reducing the surge voltage generated by the SiC MOSFET for high-speed switching. In this study, switching at 270 A (a current density of 1000 A/cm 2 or more for the SiC MOSFET) was performed to evaluate this module. The turn-off switching time tf was ~10 ns, and the maximum dv/dt was 80 kV/us. Furthermore, this re

APA, Harvard, Vancouver, ISO, and other styles

25

Hebali, Mourad, Menaouer Bennaoum, Mohammed Berka, et al. "A high electrical performance of DG-MOSFET transistors in 4H-SiC and 6H-SiC 130 nm technology by BSIM3v3 model." Journal of Electrical Engineering 70, no. 2 (2019): 145–51. http://dx.doi.org/10.2478/jee-2019-0021.

Full text

Abstract:

Abstract In this paper, the electrical performance of double gate DG-MOSFET transistors in 4H-SiC and 6H-SiC technologies have been studied by BSIM3v3 model. In which the I–V and gm–V characteristics and subthreshold operation of the DGMOSFET have been investigated for two models (series and parallel) based on equivalent electronic circuits and the results so obtained are compared with the single gate SG-MOSFET, using 130 nm technology and OrCAD PSpice software. The electrical characterization of DG-MOSFETs transistors have shown that they operate under a low voltage less than 1.2 V and low po

APA, Harvard, Vancouver, ISO, and other styles

26

Devadas, Shree Chakravarthy, and Ramani Kannan. "COMPARATIVE ANALYSIS OF THERMAL STRESS OF Si AND SiC MOSFETs." Platform : A Journal of Engineering 5, no. 2 (2021): 23. http://dx.doi.org/10.61762/pajevol5iss2art12810.

Full text

Abstract:

The performance of power MOSFET is affected by high thermal stress exposure. A high level of thermal stress is induced when the MOSFET experiences a temperature change. This finding is about the bonding wire lift-off on the solder pad. The MOSFET model is designed with the heatsink to ensure accurate results are obtained in this research work. The key intention of this research is to investigate the condition of silicon and silicon carbide power MOSFETs during thermal stress. The thermal properties of silicon and silicon carbide MOSFET were investigated by developing a 3D modal and thermal str

APA, Harvard, Vancouver, ISO, and other styles

27

Akbar, Ghulam, Alessio Di Fatta, Giuseppe Rizzo, Guido Ala, Pietro Romano, and Antonino Imburgia. "Comprehensive Review of Wide-Bandgap (WBG) Devices: SiC MOSFET and Its Failure Modes Affecting Reliability." Physchem 5, no. 1 (2025): 10. https://doi.org/10.3390/physchem5010010.

Full text

Abstract:

Silicon carbide (SiC) MOSFETs, as a member of the emerging technology of wide-bandgap (WBG) semiconductors, are transforming high-power and high-temperature applications due to their superior electrical and thermal properties. Their potential to outperform traditional silicon-based devices, particularly in terms of efficiency and operational stability, has made them a popular choice for power electronics. However, reliability issues about numerous failure types, including gate-oxide degradation, threshold voltage instability, and body diode degeneration, remain serious challenges. This article

APA, Harvard, Vancouver, ISO, and other styles

28

Wei, Xiaofeng, Hongxin Zhang, Lei Shu, et al. "Analysis of electromagnetic radiation characteristics under TID radiation effects of trench-gate SiC MOSFETs." Journal of Instrumentation 20, no. 04 (2025): P04005. https://doi.org/10.1088/1748-0221/20/04/p04005.

Full text

Abstract:

Abstract This article is focused on the electromagnetic radiation effects of Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) under total ionizing dose (TID) effect. A 650V trench-gate SiC MOSFET was selected as the experimental subject. The variations in the electronic characteristics of SiC MOSFETs were explained from the perspective of crystal defects. Furthermore, an analysis of the trends in the electromagnetic radiation characteristics of the device was conducted based on the changes in the electrical properties of SiC devices. A broad network model for

APA, Harvard, Vancouver, ISO, and other styles

29

Li, Jinyuan, Meiting Cui, Yujie Du, Junji Ke, and Zhibin Zhao. "Influence of Parasitic Inductances on Switching Performance of SiC MOSFET." E3S Web of Conferences 64 (2018): 04005. http://dx.doi.org/10.1051/e3sconf/20186404005.

Full text

Abstract:

Compared to the silicon power devices, silicon carbide device has shorter switch time. Hence, as a result of the faster transition of voltage (dv/dt) and current (di/dt) in SiC MOSFET, the influence of parasitic parameters on SiC MOSFET’s switching transient is more serious. This paper gives an experimental study of the influence of parasitic inductance on SiC MOSFET’s switching characteristics. Most significance parameters are the parasitic inductances of gate driver loop and power switching loop. These include the SiC MOSFET package’s parasitic inductance, interconnect inductance and the par

APA, Harvard, Vancouver, ISO, and other styles

30

Zhang, Liqi, Suxuan Guo, Pengkun Liu, and Alex Q. Huang. "Comparative Evaluation and Analysis of Gate Driver Impacts on a SiC MOSFET-Gate Driver Integrated Power Module." International Symposium on Microelectronics 2017, no. 1 (2017): 000247–51. http://dx.doi.org/10.4071/isom-2017-wa35_023.

Full text

Abstract:

Abstract SiC MOSFET-gate driver integrated power module is proposed to provide ultra-low stray inductance compared to traditional TO-247 or TO-220 packages. Kelvin connection eliminates the common source stray inductance and zero external gate resistor enables faster switching. This module can be operated at MHz switching frequency for high power applications with lower switching losses than discrete packages. Two different gate drivers and two different SiC MOSFETs are grouped and integrated into three integrated power modules. Comparative evaluation and analysis of gate driver impacts on swi

APA, Harvard, Vancouver, ISO, and other styles

31

Ataseven, Ismail, Ilker Sahin, and Salih Baris Ozturk. "Design and Implementation of a Paralleled Discrete SiC MOSFET Half-Bridge Circuit with an Improved Symmetric Layout and Unique Laminated Busbar." Energies 16, no. 6 (2023): 2903. http://dx.doi.org/10.3390/en16062903.

Full text

Abstract:

Silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) have many advantages compared to silicon (Si) MOSFETs: low drain-source resistance, high thermal conductivity, low leakage current, and high switching frequency. As a result, Si MOSFETs are replaced with SiC MOSFETs in many industrial applications. However, there are still not as many SiC modules to customize for each application. To meet the high-power requirement for custom applications, paralleling discrete SiC MOSFETs is an essential solution. However, it comes with many technical challenges; inequality in c

APA, Harvard, Vancouver, ISO, and other styles

32

Race, Salvatore, Ivana Kovacevic-Badstubner, Roger Stark та ін. "Small-Signal Impedance and Split C-V Characterization of High-κ SiC Power MOSFETs". Materials Science Forum 1091 (5 червня 2023): 67–71. http://dx.doi.org/10.4028/p-2388hx.

Full text

Abstract:

In this work, the improvement of SiC power MOSFET performance achieved using high-κ gate-dielectrics instead of the standard SiO2 is investigated by means of advanced gate-impedance characterization. The benefit of using high-κ gate-dielectrics with high dielectric constant is demonstrated by comparing SiC MOSFETs with pure high-κ, a stack of SiO2/high-κ, as well as pure SiO2. Namely, the fabricated high-κ SiC MOSFETs show a superior performance to commercial SiC MOSFETs with SiO2/SiC interface with respect to channel resistance and interface quality. The proposed characterization approach is

APA, Harvard, Vancouver, ISO, and other styles

33

Kannan, Ramani, Saranya Krishnamurthy, Chay Che Kiong, and Taib B. Ibrahim. "Impact of gamma-ray irradiation on dynamic characteristics of Si and SiC power MOSFETs." International Journal of Electrical and Computer Engineering (IJECE) 9, no. 2 (2019): 1453. http://dx.doi.org/10.11591/ijece.v9i2.pp1453-1460.

Full text

Abstract:

Power electronic devices in spacecraft and military applications requires high radiation tolerant. The semiconductor devices face the issue of device degradation due to their sensitivity to radiation. Power MOSFET is one of the primary components of these power electronic devices because of its capabilities of fast switching speed and low power consumption. These abilities are challenged by ionizing radiation which damages the devices by inducing charge built-up in the sensitive oxide layer of power MOSFET. Radiations degrade the oxides in a power MOSFET through Total Ionization Dose effect me

APA, Harvard, Vancouver, ISO, and other styles

34

Kannan, Ramani, Saranya Krishnamurthy, Chay Che Kiong, Ibrahim Taib B, and Yusof Abdullah. "Impact of gamma-ray irradiation on dynamic characteristics of Si and SiC power MOSFETs." International Journal of Electrical and Computer Engineering (IJECE) 9, no. 2 (2019): 1453–60. https://doi.org/10.11591/ijece.v9i2.pp1453-1460.

Full text

Abstract:

Power electronic devices in spacecraft and military applications requires high radiation tolerant. The semiconductor devices face the issue of device degradation due to their sensitivity to radiation. Power MOSFET is one of the primary components of these power electronic devices because of its capabilities of fast switching speed and low power consumption. These abilities are challenged by ionizing radiation which damages the devices by inducing charge built-up in the sensitive oxide layer of power MOSFET. Radiations degrade the oxides in a power MOSFET through Total Ionization Dose effect me

APA, Harvard, Vancouver, ISO, and other styles

35

Zhu, Tianle. "Study on switching behavior of silicon carbide MOSFET by gate driver." Highlights in Science, Engineering and Technology 56 (July 14, 2023): 506–19. http://dx.doi.org/10.54097/hset.v56i.10720.

Full text

Abstract:

Compared with IGBT, SiC MOSFET has improved frequency efficiency, outstanding reliability which not only can achieve energy saving and loss reduction, but also increase power density and other characteristics. SiC MOSFETs are faced with countless challenges in practice because of their superior switching speed. The gate driver was adjusted in this paper to investigate the switching behavior of silicon carbide MOSFET. The switching behavior of silicon carbide devices was first characterized by simulation software using a double- pulse test bench. Different parasitic inductances, resistances and

APA, Harvard, Vancouver, ISO, and other styles

36

Martino, Edoardo, Slavo Kicin, Yuan Zong, et al. "Dynamic Bias-Temperature Instability Testing in SiC MOSFETs." Solid State Phenomena 361 (August 26, 2024): 59–64. http://dx.doi.org/10.4028/p-51nbyj.

Full text

Abstract:

For power converter development in mission critical applications, the attractive performances of SiC power MOSFETs are shadowed by reliability concerns, particularly those induced by the defects at the gate dielectric. Charge trapping at the oxide-semiconductor interface can lead to threshold voltage drift, degrading the power converter efficiency and lifetime. The scope of this contribution is to show a testing methodology under development to understand SiC power MOSFET threshold voltage stability under dynamic and accelerated operating conditions. The presented testing methodology relies on

APA, Harvard, Vancouver, ISO, and other styles

37

Zhu, Shengnan, Tianshi Liu, Junchong Fan, et al. "A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching." Materials 15, no. 19 (2022): 6690. http://dx.doi.org/10.3390/ma15196690.

Full text

Abstract:

A new cell topology named the dodecagonal (a polygon with twelve sides, short for Dod) cell is proposed to optimize the gate-to-drain capacitance (Cgd) and reduce the specific ON-resistance (Ron,sp) of 4H-SiC planar power MOSFETs. The Dod and the octagonal (Oct) cells are used in the layout design of the 650 V SiC MOSFETs in this work. The experimental results confirm that the Dod-cell MOSFET achieves a 2.2× lower Ron,sp, 2.1× smaller high-frequency figure of merit (HF-FOM), higher turn on/off dv/dt, and 29% less switching loss than the fabricated Oct-cell MOSFET. The results demonstrate that

APA, Harvard, Vancouver, ISO, and other styles

38

An, Yiping, Yifan Wang, Yujin Wu, and Jiazhen Yang. "Conduction Mechanism and Influencing Factors of SiC MOSFET." Journal of Physics: Conference Series 2435, no. 1 (2023): 012021. http://dx.doi.org/10.1088/1742-6596/2435/1/012021.

Full text

Abstract:

Abstract With the rapid development of the microelectronics industry, power semiconductor devices are getting more and more attention from the industry. At the same time, discussions on the application of power semiconductor materials have never stopped. Over the years, SiC material has stood out because of its superior physical characteristics. Compared with traditional Si MOSFET technology, SiC MOSFET technology has better physical characteristics in some aspects and has a broader market prospect. This paper introduces the conduction mechanism of SiC MOSFET and its performance factors, and t

APA, Harvard, Vancouver, ISO, and other styles

39

Prado, Edemar O., Pedro C. Bolsi, Hamiltom C. Sartori, and José R. Pinheiro. "An Overview about Si, Superjunction, SiC and GaN Power MOSFET Technologies in Power Electronics Applications." Energies 15, no. 14 (2022): 5244. http://dx.doi.org/10.3390/en15145244.

Full text

Abstract:

This work presents a comparative analysis among four power MOSFET technologies: conventional Silicon (Si), Superjunction (SJ), Silicon Carbide (SiC) and Gallium Nitride (GaN), indicating the voltage, current and frequency ranges of the best performance for each technology. For this, a database with 91 power MOSFETs from different manufacturers was built. MOSFET losses are related to individual characteristics of the technology: drain-source on-state resistance, input capacitance, Miller capacitance and internal gate resistance. The total losses are evaluated considering a drain-source voltage

APA, Harvard, Vancouver, ISO, and other styles

40

Imaizumi, Masayuki, Yoichiro Tarui, Shin Ichi Kinouchi, et al. "Switching Characteristics of SiC-MOSFET and SBD Power Modules." Materials Science Forum 527-529 (October 2006): 1289–92. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1289.

Full text

Abstract:

Prototype SiC power modules are fabricated using our class 10 A, 1.2 kV SiC-MOSFETs and SiC-SBDs, and their switching characteristics are evaluated using a double pulse method. Switching waveforms show that both overshoot and tail current, which induce power losses, are suppressed markedly compared with conventional Si-IGBT modules with similar ratings. The total switching loss (MOSFET turn-ON loss, turn-OFF loss and SBD recovery loss) of SiC power modules is measured to be about 30% of that of Si-IGBT modules under the generally-used switching condition (di/dt ~250A/μs). The three losses of S

APA, Harvard, Vancouver, ISO, and other styles

41

Vobecký, Jan. "The current status of power semiconductors." Facta universitatis - series: Electronics and Energetics 28, no. 2 (2015): 193–203. http://dx.doi.org/10.2298/fuee1502193v.

Full text

Abstract:

Trends in the design and technology of power semiconductor devices are discussed on the threshold of the year 2015. Well established silicon technologies continue to occupy most of applications thanks to the maturity of switches like MOSFET, IGBT, IGCT and PCT. Silicon carbide (SiC) and gallium nitride (GaN) are striving to take over that of the silicon. The most relevant SiC device is the MPS (JBS) diode, followed by MOSFET and JFET. GaN devices are represented by lateral HEMT. While the long term reliability of silicon devices is well trusted, the SiC MOSFETs and GaN HEMTs are struggling to

APA, Harvard, Vancouver, ISO, and other styles

42

Okabe, Hiroaki, Motoru Yoshida, Takaaki Tominaga, et al. "High Temperature Reliability of the SiC-MOSFET with Copper Metallization." Materials Science Forum 778-780 (February 2014): 955–58. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.955.

Full text

Abstract:

We investigated the SiC-MOSFET with Cu metallization instead of conventional Al metallization to apply to high reliability power modules. As Cu has higher electrical and thermal conductivity, yield strength, and tolerance of its migration than those of Al, applying Cu to metallization and wire bonds will lead to longer lifetime for power modules. One of the major difficulties with Cu metallization is its high diffusivity into SiO2 and poly-Si which are used as gate oxide, interlayer oxide, and gate electrodes in SiC-MOSFETs, resulting in degradation of devices. We fabricated the SiC-MOSFET wit

APA, Harvard, Vancouver, ISO, and other styles

43

Luo, Qixiao. "Research on the advantages and development status of new material MOSFET." Highlights in Science, Engineering and Technology 33 (February 21, 2023): 210–18. http://dx.doi.org/10.54097/hset.v33i.5313.

Full text

Abstract:

When using MOSFETs, in order to improve the operating speed, so that higher power density and lower functional consumption can be obtained in the process, researchers have explored in multiple dimensions. In this paper, three popular new material MOSFETs are mainly explained, including SiC MOSFET, GaN MOSFET and graphene MOSFET. This paper introduces their advantages and their development status, so as to compare the advantages of new materials. In conclusion, By adding materials, the electron mobility and stability of the FET can be increased in some situation. The research in this paper will

APA, Harvard, Vancouver, ISO, and other styles

44

Li, Wangtian, Gang Guo, Qiming Chen, et al. "Experimental Study of the Comparison of the Synergistic Effect of Total Ionizing Dose and Neutron Single Event on Si/SiC MOSFETs." Electronics 14, no. 4 (2025): 763. https://doi.org/10.3390/electronics14040763.

Full text

Abstract:

A comparative study on the synergistic effect of the total ionizing dose and neutron single event effect on a SiC MOSFET and Si MOSFET was performed based on the 60Co γ source and the high-pressure multiplier 14 MeV neutron source at the China Institute of Atomic Energy. First, a γ-ray total ionizing dose experiment was performed on these two devices, and the differences in the total ionizing dose damage of the SiC and Si MOSFETs were analyzed. Then, neutron single event effect experiments were performed to investigate the effects of different doses on the single event effect for the devices.

APA, Harvard, Vancouver, ISO, and other styles

45

Matacena, Ilaria, Luca Maresca, Michele Riccio, Andrea Irace, Giovanni Breglio, and Santolo Daliento. "Evaluation of Interface Traps Type, Energy Level and Density of SiC MOSFETs by Means of C-V Curves TCAD Simulations." Materials Science Forum 1004 (July 2020): 608–13. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.608.

Full text

Abstract:

SiC MOSFETs are promising devices for many power applications. They are replacing Si devices due to the higher performance of SiC material. However, there are some technological issues still unsolved. One of the main problems is the high density of traps at the SiC/SiO2 interface. Traps distribution at such interface is complex and it affects the overall performance of the device. Traps influence both current-voltage and capacitance-voltage characteristics of a SiC MOSFET. The aim of this work is the study of interface traps effects on C-V and I-V curves for a 1200 V SiC MOSFET. The numerical

APA, Harvard, Vancouver, ISO, and other styles

46

Matocha, Kevin, Sujit Banerjee, and Kiran Chatty. "Advanced SiC Power MOSFETs Manufactured on 150mm SiC Wafers." Materials Science Forum 858 (May 2016): 803–6. http://dx.doi.org/10.4028/www.scientific.net/msf.858.803.

Full text

Abstract:

An advanced silicon carbide power MOSFET process was developed and implemented on a high-volume 150mm silicon production line. SiC power MOSFETs fabricated on this 150mm silicon production line were demonstrated with blocking voltage of 1700V with VGS=0V. These SiC MOSFETs have a specific on-resistance as low as 3.1 mΩ-cm2 at room temperature, increasing to 6.7 mΩ-cm2 at 175°C. Devices were packaged in TO-247 package and measured to have on-resistance of 45 mΩ with VGS=20V at room temperature. Clamped inductive switching characterization of these SiC MOSFETs shows turn-off losses as low as 110

APA, Harvard, Vancouver, ISO, and other styles

47

Harada, Shinsuke, Makoto Kato, Tsutomu Yatsuo, Kenji Fukuda, and Kazuo Arai. "Influence of Metallization Annealing on Channel Mobility in 4H-SiC MOSFET on Carbon Face." Materials Science Forum 600-603 (September 2008): 675–78. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.675.

Full text

Abstract:

4H-SiC MOSFET on carbon face exhibits the high channel mobility when the gate oxide is formed by pyrogenic wet oxidation. However, this improvement is not proof against the metallization annealing which is indispensable in the fabrication of the SiC power MOSFETs. We develop the alternative metallization process suitable for the high channel mobility on the carbon face. The metallization annealing in hydrogen ambient has much effect to suppress the degradation of the channel mobility. The lateral MOSFET with the ohmic contact formed by hydrogen annealing exhibits the high channel mobility whic

APA, Harvard, Vancouver, ISO, and other styles

48

Peters, Dethard, Reinhold Schörner, Peter Friedrichs, and Dietrich Stephani. "SiC Power MOSFETs – Status, Trends and Challenges." Materials Science Forum 527-529 (October 2006): 1255–60. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1255.

Full text

Abstract:

SiC power MOSFETs are attractive electronic power switches for innovative power supply and motor drive solutions. The paper discusses this statement and specifies market segments offering the best chances for a commercialization. Due to well-known difficulties in achieving adequate channel conductivity, a lot of SiC-MOSFET publications focus on the channel mobility. However, for a power MOSFET this is only one important parameter affecting the performance. Other characteristics have to be considered too for an honest evaluation: transfer characteristics and blocking capability over the standar

APA, Harvard, Vancouver, ISO, and other styles

49

Kang, Zhuang, Xiaofeng Xie, Yang Liu, et al. "A High-Voltage Pulse Modulator Composed of SiC MOSFETs/IGBTs in a Hybrid Connecting State." Electronics 13, no. 11 (2024): 2108. http://dx.doi.org/10.3390/electronics13112108.

Full text

Abstract:

In order to solve problems such as a slow switching speed, a high switching power, a loss of pure IGBT modulators, and the weak withstanding load short-circuit ability of pure SiC MOSFET modulators used for vacuum loads, this paper proposes a new scheme for high-voltage pulse modulators based on SiC MOSFET/IGBT hybrid connecting circuits. It has a low power loss like the pure SiC MOSFET modulator and a strong withstanding load short-circuit ability like the pure IGBT modulator. Firstly, the principle circuit of the hybrid connecting modulator are discussed and chosen. And the basic working pro

APA, Harvard, Vancouver, ISO, and other styles

50

Matacena, Ilaria, Luca Maresca, Michele Riccio, Andrea Irace, Giovanni Breglio, and Santolo Daliento. "Experimental Analysis of C-V and I-V Curves Hysteresis in SiC MOSFETs." Materials Science Forum 1062 (May 31, 2022): 669–75. http://dx.doi.org/10.4028/p-bzki64.

Full text

Abstract:

SiC MOSFETs have already replace silicon-based device in power applications, even if some technological issues are still not solved. The most important of them is related to the complex traps distribution at SiC/SiO2 interface. Interface traps affect the overall device behavior, modifying channel mobility and introducing hysteresis. In this work experimental C-V and I-V curves are carried out on various commercial SiC MOSFET at different temperatures. The focus is the comparison of hysteresis arising in trench and planar SiC MOSFETs.

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!