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Relevant bibliographies by topics / Simulation in nanoelectronics / Dissertations / Theses

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Dissertations / Theses on the topic 'Simulation in nanoelectronics'

Author: Grafiati

Published: 28 May 2022

Last updated: 31 July 2025

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1

Weston, Joseph. "Numerical methods for time-resolved quantum nanoelectronics." Thesis, Université Grenoble Alpes (ComUE), 2016. http://www.theses.fr/2016GREAY040/document.

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De récents progrès dans la nanoélectronique quantique ont donné lieu à denouvelles expériences avec des sources cohérentes d'électrons unique. Lorsqu'undispositif électronique quantique est manipulé sur une échelle de temps pluscourte que le temps de vol caractéristique d'un électron à travers ledispositif, toute une gamme de possibilités qui sont conceptuellement nouvellesdeviennent possible. Pour traiter de telles situations physiques, des avancéescorrespondantes sont nécessaires dans les techniques de simulation, pour aiderà comprendre, ainsi qu'à concevoir, la prochaine génération d'expéri

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2

Kudrya, V. G., and D. A. Voronenko. "Designing Nanotechnology Matching Devices." Thesis, Sumy State University, 2013. http://essuir.sumdu.edu.ua/handle/123456789/35357.

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The work describes the features of simulation of the ultrahigh-frequency electromagnetic interaction, which forms an internal solenoid status of monolithic integrated circuits. As an example, is the study of matching devices, which are made in the form of the band-pass lines. The proposed method of modeling, to determine the dependence of the finite frequency and temporal characteristics of the cascading schemes amplifiers. Thus, the proposed method of modeling physical processes appear not only domestic but also external display spatially distributed nano-and micro-strip technology structures

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3

Okobiah, Oghenekarho. "Geostatistical Inspired Metamodeling and Optimization of Nanoscale Analog Circuits." Thesis, University of North Texas, 2014. https://digital.library.unt.edu/ark:/67531/metadc500074/.

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The current trend towards miniaturization of modern consumer electronic devices significantly affects their design. The demand for efficient all-in-one appliances leads to smaller, yet more complex and powerful nanoelectronic devices. The increasing complexity in the design of such nanoscale Analog/Mixed-Signal Systems-on-Chip (AMS-SoCs) presents difficult challenges to designers. One promising design method used to mitigate the burden of this design effort is the use of metamodeling (surrogate) modeling techniques. Their use significantly reduces the time for computer simulation and design sp

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4

Reinke, Charles M. "Design, simulation, and characterization toolset for nano-scale photonic crystal devices." Diss., Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/33932.

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The objective of this research is to present a set of powerful simulation, design, and characterization tools suitable for studying novel nanophotonic devices. The simulation tools include a three-dimensional finite-difference time-domain code adapted for parallel computing that allows for a wide range of simulation conditions and material properties to be studied, as well as a semi-analytical Green's function-based complex mode technique for studying loss in photonic crystal waveguides. The design tools consist of multifunctional photonic crystal-based template that has been simulated with no

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5

Cao, Jiang. "Transistors à effet tunnel à base de matériaux bidimensionnels." Thesis, Université Grenoble Alpes (ComUE), 2017. http://www.theses.fr/2017GREAT009/document.

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L'isolement du graphène a suscité un grand intérêt vers la recherche d’applications potentielles de ce matériau unique et d'autres matériaux bidimensionnels (2D) pour l'électronique, l'optoélectronique, la spintronique et de nombreux autres domaines. Par rapport au graphène, les dichalcogenides de métaux de transition (TMD) 2D offrent l'avantage d'être des semi-conducteurs, ce qui permettrait de les utiliser pour des circuits logiques. Au cours des dix dernières années, de nombreux développements ont déjà été réalisés dans ce domaine où les opportunités et les défis coexistent. Cette thèse pré

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6

Rykaczewski, Konrad. "Electron beam induced deposition (EBID) of carbon interface between carbon nanotube interconnect and metal electrode." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/31773.

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Thesis (Ph.D)--Mechanical Engineering, Georgia Institute of Technology, 2010.<br>Committee Chair: Dr. Andrei G. Fedorov; Committee Member: Dr. Azad Naeemi; Committee Member: Dr. Suresh Sitaraman; Committee Member: Dr. Vladimir V. Tsukruk; Committee Member: Dr. Yogendra Joshi. Part of the SMARTech Electronic Thesis and Dissertation Collection.

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7

Lee, Jae Woo. "Electrical characterization and modeling of low dimensional nanostructure FET." Thesis, Grenoble, 2011. http://www.theses.fr/2011GRENT070/document.

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At the beginning of this thesis, basic and advanced device fabrication process which I haveexperienced during study such as top-down and bottom-up approach for the nanoscale devicefabrication technique have been described. Especially, lithography technology has beenfocused because it is base of the modern device fabrication. For the advanced device structure,etching technique has been investigated in detail.The characterization of FET has been introduced. For the practical consideration in theadvanced FET, several parameter extraction techniques have been introduced such as Yfunction,split C-V

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8

Maassen, Jesse. "First principles simulations of nanoelectronic devices." Thesis, McGill University, 2012. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=106463.

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As the miniaturization of devices begins to reveal the atomic nature of materials, where chemical bonding and quantum effects are important, one must resort to a parameter-free theory for predictions. This thesis theoretically investigates the quantum transport properties of nanoelectronic devices using atomistic first principles. Our theoretical formalism employs density functional theory (DFT) in combination with Keldysh nonequilibrium Green's functions (NEGF). Self-consistently solving the DFT Hamiltonian with the NEGF charge density provides a way to simulate nonequilibrium systems without

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9

Huang, Jun, and 黃俊. "Efficiency enhancement for nanoelectronic transport simulations." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2013. http://hdl.handle.net/10722/196031.

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Continual technology innovations make it possible to fabricate electronic devices on the order of 10nm. In this nanoscale regime, quantum physics becomes critically important, like energy quantization effects of the narrow channel and the leakage currents due to tunneling. It has also been utilized to build novel devices, such as the band-to-band tunneling field-effect transistors (FETs). Therefore, it presages accurate quantum transport simulations, which not only allow quantitative understanding of the device performances but also provide physical insight and guidelines for device optimizati

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10

Zörgiebel, Felix. "Silicon Nanowires for Biosensor Applications." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2017. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-230675.

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Nanostrukturen haben in den letzten Jahrzehnten durch konsequente Förderung wie der im Jahr 2000 gestarteten National Nanotechnology Initiative der USA oder des deutschen Pendants Aktionsplan Nanotechnologie erhebliches Aufsehen, nicht nur in der Wissenschaft, sondern auch in der technischen und wirtschaftlichen Umsetzung erfahren. In Kombination mit biologischen Systemen, deren Funktionalität sich auf der Größenordnung von Nanometern abspielt, finden nanotechnologische Entwicklungen auf dem Gebiet der Medizin ein großes technisches Anwendungsgebiet. Diese Arbeit widmet sich der Untersuchung u

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11

PENAZZI, GABRIELE. "Development of an atomistic/continous simulation tool for nanoelectronic devices." Doctoral thesis, Università degli Studi di Roma "Tor Vergata", 2010. http://hdl.handle.net/2108/1335.

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La simulazione dei moderni dispositivi elettronici è una grande sfida per la comunità ingegneristica. L'enorme progresso nei processi di fabbricazione ha permesso una riduzione della dimensione dei dispositivi talmente spinta che fenomeni tipici della scala di lunghezza nanometrica giocano un ruolo cruciale. Inoltre stiamo assistendo a un grande sforzo teso ad esplorare soluzioni tecnologiche alternatice ai tradizionali dispositivi a semiconduttore. Questo sforzo è rivolto verso la frontiera dell'elettronica molecolare, dei polimeri semiconduttori, delle strutture autoassemblanti,

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12

FRACHE, STEFANO. "Massively Parallel Nanoarchitectures: structures, algorithms and simulation tools." Doctoral thesis, Politecnico di Torino, 2013. http://hdl.handle.net/11583/2518616.

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The exponential growth of computing power that we have been used-to since years is about to face new challenges, most notably for technical and economical reasons. It is highly debated when it will be time to go past traditional CMOS technology, but from ITRS data we know that traditional ultra-deep submicron devices are approaching fundamental physical limits. From an economical point of view, the extremely high costs of chip masks and production plants are posing substantial limitations to the development margins. The end of a remarkably successful era in computing is approaching then. It’s

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13

Kurniawan, Erry Dwi, and 艾. 里. "Study of High Mobility and Quantum Well Semiconductor Nanoelectronics Devices by 3D TCAD Simulation." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/7wxbj5.

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14

Zörgiebel, Felix. "Silicon Nanowires for Biosensor Applications." Doctoral thesis, 2016. https://tud.qucosa.de/id/qucosa%3A30645.

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Nanostrukturen haben in den letzten Jahrzehnten durch konsequente Förderung wie der im Jahr 2000 gestarteten National Nanotechnology Initiative der USA oder des deutschen Pendants Aktionsplan Nanotechnologie erhebliches Aufsehen, nicht nur in der Wissenschaft, sondern auch in der technischen und wirtschaftlichen Umsetzung erfahren. In Kombination mit biologischen Systemen, deren Funktionalität sich auf der Größenordnung von Nanometern abspielt, finden nanotechnologische Entwicklungen auf dem Gebiet der Medizin ein großes technisches Anwendungsgebiet. Diese Arbeit widmet sich der Untersuchung

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15

(5929940), Daniel A. Lemus. "Low-rank Approximations in Quantum Transport Simulations." Thesis, 2020.

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Quantum-mechanical effects play a major role in the performance of modern electronic devices. In order to predict the behavior of novel devices, quantum effects are often included using Non-Equilibrium Green's Function (NEGF) methods in atomistic device representations. These quantum effects may include realistic inelastic scattering caused by device impurities and phonons. With the inclusion of realistic physical phenomena, the computational load of predictive simulations increases greatly, and a manageable basis through low-rank approximations is desired.<br><br>In this work, low-rank approx

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16

Heidenreich, Joseph David. "Molecular Dynamics Simulations of the Mechanical Deformation Behavior of Face-Centered Cubic Metallic Nanowires." 2010. http://hdl.handle.net/1805/2135.

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Indiana University-Purdue University Indianapolis (IUPUI)<br>Nanoscale materials have become an active area of research due to the enhanced mechanical properties of the nanomaterials in comparison to their respective bulk materials. The effect that the size and shape of a nanomaterial has on its mechanical properties is important to understand if these materials are to be used in engineering applications. This thesis presents the results of molecular dynamics (MD) simulations on copper, gold, nickel, palladium, platinum, and silver nanowires of three cross-sectional shapes and four diameters

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17

(7025126), Ahmedullah Aziz. "Device-Circuit Co-Design Employing Phase Transition Materials for Low Power Electronics." Thesis, 2019.

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<div> <div> <p>Phase transition materials (PTM) have garnered immense interest in concurrent post-CMOS electronics, due to their unique properties such as - electrically driven abrupt resistance switching, hysteresis, and high selectivity. The phase transitions can be attributed to diverse material-specific phenomena, including- correlated electrons, filamentary ion diffusion, and dimerization. In this research, we explore the application space for these materials through extensive device-circuit co-design and propose new ideas harnessing their unique electrical properties. The abrupt transi

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