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Journal articles on the topic 'Simulation in nanoelectronics'

Author: Grafiati

Published: 28 May 2022

Last updated: 31 July 2025

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1

Melnyk, Oleksandr, and Viktoriia Kozarevych. "SIMULATION OF PROGRAMMABLE SINGLE-ELECTRON NANOCIRCUITS." Bulletin of the National Technical University "KhPI". Series: Mathematical modeling in engineering and technologies, no. 1 (March 5, 2021): 64–68. http://dx.doi.org/10.20998/2222-0631.2020.01.05.

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The speed and specializations of large-scale integrated circuits always contradict their versatility, which expands their range and causes the rise in price of electronic devices. It is possible to eliminate the contradictions between universality and specialization by developing programmable nanoelectronic devices, the algorithms of which are changed at the request of computer hardware developers, i.e. by creating arithmetic circuits with programmable characteristics. The development of issues of theory and practice of the majority principle is now an urgent problem, since the nanoelectronic

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2

Fortes, A. B., J. Figueiredo, and M. S. Lundstrom. "Virtual Computing Infrastructures for Nanoelectronics Simulation." Proceedings of the IEEE 93, no. 10 (2005): 1839–47. http://dx.doi.org/10.1109/jproc.2005.853545.

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3

de Falco, Carlo, and Massimiliano Culpo. "Dynamical iteration schemes for multiscale simulation in nanoelectronics." PAMM 8, no. 1 (2008): 10061–64. http://dx.doi.org/10.1002/pamm.200810061.

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Culpo, Massimiliano, and Carlo de Falco. "Dynamical iteration schemes for coupled simulation in nanoelectronics." PAMM 8, no. 1 (2008): 10065–68. http://dx.doi.org/10.1002/pamm.200810065.

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5

Chou, Hung Mu, Shao Ming Yu, Jam Wem Lee, and Yiming Li. "A compact model for electrostatic discharge protection nanoelectronics simulation." International Journal of Nanotechnology 2, no. 3 (2005): 226. http://dx.doi.org/10.1504/ijnt.2005.008061.

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6

Levy, J. "Correlated nanoelectronics and the second quantum revolution." APL Materials 10, no. 11 (2022): 110901. http://dx.doi.org/10.1063/5.0111221.

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The growing field of correlated nanoelectronics exists at the intersection of two established fields: correlated oxide electronics and semiconductor nanoelectronics. The development of quantum technologies that exploit quantum coherence and entanglement for the purposes of computation, simulation, and sensing will require complex material properties to be controlled at nanoscale dimensions. Heterostructures and nanostructures formed at the interface between LaAlO3 and SrTiO3 exhibit striking behavior that arises from the ability to program the conductive behavior at extreme nanoscale dimension

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7

Sangiorgi, Enrico, Asen Asenov, Herbert S. Bennett, et al. "Foreword Special Issue on Simulation and Modeling of Nanoelectronics Devices." IEEE Transactions on Electron Devices 54, no. 9 (2007): 2072–78. http://dx.doi.org/10.1109/ted.2007.905342.

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8

Gargini, Paolo A. "Silicon Nanoelectronics and Beyond." Journal of Nanoparticle Research 6, no. 1 (2004): 11–26. http://dx.doi.org/10.1023/b:nano.0000023248.65742.6c.

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9

Tatarnikov, Denis A., and Aleksey V. Godovykh. "Molecular Dynamic Simulation of Carbon Nanostructures Formation." Advanced Materials Research 1040 (September 2014): 92–96. http://dx.doi.org/10.4028/www.scientific.net/amr.1040.92.

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This paper is devoted to the study of stable structures of various carbon nanomaterials using molecular dynamic simulation, study of their properties and characteristics, as well as search for possible later use in nanoelectronics and nanomechanics. We develop programs for computation of the system of atoms at every step and visualization of that data, also we research of thermodynamic properties and conditions of formation of different carbon nanostructures, try to predict existence of new materials. Nowadays we have two separate programs: one for computation and one for visualization. We con

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10

Weinbub, Josef, and Roza Kotlyar. "Designing Future Quantum-Based Nanoelectronics Through Modeling and Simulation [Guest Editorial]." IEEE Nanotechnology Magazine 17, no. 4 (2023): 3. http://dx.doi.org/10.1109/mnano.2023.3279710.

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11

Akšamija, Zlatan. "Numerical Study of Thermal Dissipation Processes in Silicon." B&H Electrical Engineering 14, s1 (2020): 5–13. http://dx.doi.org/10.2478/bhee-2020-0001.

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Abstract Heat dissipation in nanoelectronics has become a major bottleneck to further scaling in next-generation integrated circuits. In order to address this problem and develop more energy-efficient nanoelectronic transistor, sensor, and storage devices, we must understand thermal processes at the atomic scale, which requires numerical simulation of the interaction between electrons and heat, carried by quantized lattice vibrations called phonons. Here we examine in detail the phonon emission and absorption spectra in silicon at several elevated values for the electron temperature. The effec

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12

Italia, Markus, Ioannis Deretzis, Alfio Nastasi, et al. "Multiscale Simulations of Plasma Etching in Silicon Carbide Structures." Materials Science Forum 1062 (May 31, 2022): 214–18. http://dx.doi.org/10.4028/p-n9v122.

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Manufacturing of Silicon Carbide (SiC) based devices will soon require the accuracy and control typical of the advanced Si based nanoelectronics. As a consequence, the processes development will surely benefit of technology computer aided design (TCAD) tools dedicated to the current and future SiC process technologies. Plasma etching is one of the most critical and difficult process for optimization procedures in the micro/nanofabrication area, since the resultant 2D (e.g. in trenches) or 3D (e.g in holes) profiling is the consequence of the complex interactions between plasma and materials in

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13

Babiker, S., A. Asenov, J. R. Barker, and S. P. Beaumont. "Quadrilateral Finite Element Monte Carlo Simulation of Complex Shape Compound FETs." VLSI Design 6, no. 1-4 (1998): 127–30. http://dx.doi.org/10.1155/1998/51378.

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The complex recess and gate shape of modem compound FETs greatly affect the device parasitics and therefore impose the need for proper description of the device geometry and surface conditions in any practical device simulations. In this paper we describe a new Monte Carlo (MC) module incorporated in our Heterojunction 2D Finite element FET simulator H2F [1]. The module combines realistic quadrilateral finite-element description of the device geometry with realistic particle simulation of the non-equilibrium hot carrier transport in short recess gate compound FETs. A Single Programme Multiple

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14

Dinh, Hien Sy. "SIMULATION OF CURRENT-VOLTAGE CHARACTERISTICS OF SPIN FIELD EFFECT TRANSISTOR USING NEMO-VN2." Science and Technology Development Journal 15, no. 3 (2012): 5–16. http://dx.doi.org/10.32508/stdj.v15i3.1812.

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We have developed a simulator for nanoelectronics devices, NEMO-VN2. In this work, we provide an overview of spin field effect transistor. We use the simulator to explore the performance of spin FET. The model of the spin FET is based on non-equilibrium Green function method and implemented by using graphic user interface of Matlab. The current-voltage characteristics such as drain current-voltage, drain current-gate voltage ones are explored.

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15

Dinh, Hien Sy. "SIMULATION OF CURRENT-VOLTAGE CHARACTERISTICS OF SINGLE ELECTRON TRANSISTOR USING NEMO-VN2." Science and Technology Development Journal 15, no. 3 (2012): 15–25. http://dx.doi.org/10.32508/stdj.v15i3.1843.

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We have developed a simulator for nanoelectronics devices, NEMO-VN2. In this work we use the simulator to explore the performance of single electron transistor. The model is base on non-equilibrium Green function method and implemented by using graphic user interface of Matlab. The current-voltage characteristics such as drain current-voltage, drain current-gate voltage ones are explored. Some characteristics reproduced by the proposed model are compared with experimental results of single electron transistor and good agreements are validated.

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16

Korgel, Brian A., D. C. Lee, Tobias Hanrath, et al. "Application of Aberration-Corrected TEM and Image Simulation to Nanoelectronics and Nanotechnology." IEEE Transactions on Semiconductor Manufacturing 19, no. 4 (2006): 391–96. http://dx.doi.org/10.1109/tsm.2006.884713.

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17

Abdelkrim, Mostefai. "Modeling and Simulation of Single-Electron Transistor (SET) with Aluminum Island Using Neural Network." Carpathian Journal of Electronic and Computer Engineering 12, no. 1 (2019): 23–28. http://dx.doi.org/10.2478/cjece-2019-0005.

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Abstract SET is important in the field of nanoelectronics since a decade. This paper presents electrical characteristic of Single-Electron Transistor (SET) with Aluminum Island using Neural Network. The I-V characteristic of the Single-Electron Transistor (SET) is predicted according to different parameters (VG, T, VD, C, and R). The simulation process is based on analytical transistor model and neural network transistor model. Single Electron Transistor (SET) is the simplest device in which the effect of Coulomb blockade can be observed.

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18

Cavin, R. K., V. V. Zhirnov, D. J. C. Herr, Alba Avila, and J. Hutchby. "Research directions and challenges in nanoelectronics." Journal of Nanoparticle Research 8, no. 6 (2006): 841–58. http://dx.doi.org/10.1007/s11051-006-9123-4.

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19

Polizzi, Eric, and Ahmed Sameh. "Parallel Algorithms for Large-Scale Nanoelectronics Simulations Using NESSIE." Journal of Computational Electronics 3, no. 3-4 (2004): 363–66. http://dx.doi.org/10.1007/s10825-004-7078-1.

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20

Farahan, Md Sayed, Shaeekul Ameen, Md Farhun Monsur, and Md Faysal Nayan. "Parametric Simulation Study of Control Coefficients on the On-Off Current Ratio of Single-Walled Carbon Nanotube Field Effect Transistor." European Journal of Electrical Engineering and Computer Science 7, no. 5 (2023): 58–62. http://dx.doi.org/10.24018/ejece.2023.7.5.570.

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As the semiconductor business faces increasing technical and financial challenges, it is crucial to assess and analyze new ideas thoroughly. The unique properties of carbon nanotubes make them a promising material for applications in micro and nanoelectronics. The study focused on simulating the impact of control coefficients (gate and drain) on device characteristics. The simulation results were then analyzed using existing models. This research focused on studying the ION/IOFF ratio by varying the thickness and diameter of the nanotubes. The control coefficients have been observed to have an

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21

Hansen, Poul-Erik, and Lauryna Siaudinyte. "A virtual microscope for simulation of Nanostructures." EPJ Web of Conferences 266 (2022): 10004. http://dx.doi.org/10.1051/epjconf/202226610004.

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Light-matter interplay is widely used for analyzing the topology of surfaces on small scales for use in areas such as nanotechnology, nanoelectronics, photonics, and advanced materials. Conventional optical microscope imaging methods are limited in resolution to a value comparable to the wavelength, the so-called Abbe limit, and cannot be used to measure nano-sized structures. Scatterometry is an optical method that can measure structures smaller than the wavelength. However, the relative uncertainties of the structure dimensions measured with scatterometry increase with decreasing structure s

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22

Haley, Benjamin P., Gerhard Klimeck, Mathieu Luisier, et al. "Computational nanoelectronics research and education at nanoHUB.org." Journal of Computational Electronics 8, no. 2 (2009): 124–31. http://dx.doi.org/10.1007/s10825-009-0273-3.

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23

Popov, Alexander Mikhailovich. "NUMERICAL STUDY OF QUANTUM DOT SPECTRUM CALCULATION ON THE BASE OF MONTE CARLO METHOD." Computational nanotechnology 6, no. 3 (2019): 74–79. http://dx.doi.org/10.33693/2313-223x-2019-6-3-74-79.

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The work is directed to numerical simulation of quantum dots spectrum for molecular nanostructure of small size for creation of new nanotechnology. Quantum dots are the small peaces of semiconductor which presents the molecular system heterostucture. The cariers of charge are confined in small region. The main acsent is made on development of effective method for determination of eigenfuncions and eigenvalues of quantum dot. Quantum dots are used in nanoelectronics, in bio-sensors of nanosize, and in the systems of medical diagnostics of high precision.

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24

Lega, Peter V., Dmitriy S. Kuchin, Victor V. Koledov, Vedamanickam Sampath, Alexey M. Zhikharev, and Vladimir G. Shavrov. "Simulation of Control System for Shape Memory Nanotweezers." Materials Science Forum 845 (March 2016): 142–45. http://dx.doi.org/10.4028/www.scientific.net/msf.845.142.

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Thermoelastic martensitic phase transition in Ni-Ti based shape memory alloys enables designing micro- and nanotools that are controlled by small changes in temperature (~10°С). This makes it feasible creating a new generation of complex microrobotical systems for manipulation and treatment of various nanoobjects in nanoindustry, medicine, nanoelectronics, etc. This work deals with the development of a physical and mathematical model for the micro manipulation system. The system under investigation pertains to shape memory composite nanotweezers with the composition Ti2NiCu/Pt located at the t

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25

CHEN, Y. J., L. FU, Y. CHEN, J. ZOU, J. LI, and W. H. DUAN. "TUNABLE ELECTRIC CONDUCTIVITIES OF Au-DOPED BORON NITRIDE NANOTUBES." Nano 02, no. 06 (2007): 367–72. http://dx.doi.org/10.1142/s1793292007000702.

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Tunable electronic properties of nanotubes are an essential requirement for building nanotube circuits and devices. We have produced BN nanotube films with controlled electric conductivities by Au doping. The Au -doped BN nanotube films have been found to exhibit from semiconducting to metallic behavior under different Au contents. Both experimental and computing simulation studies reveal that the conductivities of the doped film are improved by the incorporation of Au atoms into nanotube walls. The doped BN nanotubes and films are expected to have potential applications in catalysts, sensors

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26

Falaschetti, Laura, Davide Mencarelli, Nicola Pelagalli, et al. "A Compact and Robust Technique for the Modeling and Parameter Extraction of Carbon Nanotube Field Effect Transistors." Electronics 9, no. 12 (2020): 2199. http://dx.doi.org/10.3390/electronics9122199.

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Carbon nanotubes field-effect transistors (CNTFETs) have been recently studied with great interest due to the intriguing properties of the material that, in turn, lead to remarkable properties of the charge transport of the device channel. Downstream of the full-wave simulations, the construction of equivalent device models becomes the basic step for the advanced design of high-performance CNTFET-based nanoelectronics circuits and systems. In this contribution, we introduce a strategy for deriving a compact model for a CNTFET that is based on the full-wave simulation of the 3D geometry by usin

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27

Chen, Yan, and Li Bao An. "Electron Beam Irradiation on Substrate for Precise Dielectrophoretic Assembly of Carbon Nanotubes - A Simulation." Advanced Materials Research 960-961 (June 2014): 69–72. http://dx.doi.org/10.4028/www.scientific.net/amr.960-961.69.

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The effect of electron beam irradiation on permittivity of silicon dioxide insulate layer was investigated. Theoretical analysis indicates that electron beam irradiation will change the permittivity of SiO2through decreasing the molecular number per unit volume and increasing the polarizability of the sample. The escape of impurities during irradiation decreases the permittivity while the accumulation of space charge increases the permittivity. Simulation results show that with the change of permittivity, the electric field of the area irradiated by electron beam is strengthened locally and ca

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28

Mao, V., V. Thusu, C. Dwyer, and K. Chakrabarty. "Connecting fabrication defects to fault models and simulation program with integrated circuit emphasis simulations for DNA self-assembled nanoelectronics." IET Computers & Digital Techniques 3, no. 6 (2009): 553. http://dx.doi.org/10.1049/iet-cdt.2008.0136.

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29

Basaran, Cemal, and Minghui Lin. "Electromigration induced strain field simulations for nanoelectronics lead-free solder joints." International Journal of Solids and Structures 44, no. 14-15 (2007): 4909–24. http://dx.doi.org/10.1016/j.ijsolstr.2006.12.011.

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30

Le, Minh Hoang, and Hien Sy Dinh. "Some physical results of single electron transitor." Science and Technology Development Journal - Natural Sciences 1, no. 6 (2018): 206–13. http://dx.doi.org/10.32508/stdjns.v1i6.631.

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Single electron transistor (SET) is a key element in current research area of nanoelectronics and nanotechnology which can offer nano-feature size, low power consumption and high operating speed. SET is a new nanoscale switching device. It can control the motion of the single electron. The goal of this paper is to discuss about some physical properties of the SET and focuses on simulation of basic quantum device characteristics such as tunneling effect, Coulomb blockage, Quantum dot, Coulomb staircase, and Coulomb oscillation. The current-voltage characteristics of SET are explored for illustr

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31

Mehrabani, Yavar Safaei, and Mohammad Eshghi. "High-Speed, High-Frequency and Low-PDP, CNFET Full Adder Cells." Journal of Circuits, Systems and Computers 24, no. 09 (2015): 1550130. http://dx.doi.org/10.1142/s0218126615501303.

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In this paper, three CNT-based full adder designs, called Design1, Design2 and Design3, are proposed. In these designs 12, 14 and 16 transistors are used, respectively. In all designs only 3-input NAND, Majority-not and NOR functions are used. First, a preliminary structure (Design1) is presented using 12 transistors. Then its weaknesses are tackled in two steps. In fact, in each step a new design is presented by adding two more transistors to its predecessor. Therefore two new structures called Design2 and Design3 are built in which Design3 is the most efficient one. To study the performance

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32

Sergeyev, D., N. Zhanturina, L. Myasnikova, A. I. Popov, A. Duisenova, and A. Istlyaup. "Computer Simulation of the Electric Transport Properties of the FeSe Monolayer." Latvian Journal of Physics and Technical Sciences 57, no. 6 (2020): 3–11. http://dx.doi.org/10.2478/lpts-2020-0029.

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AbstractThe paper deals with the model research of electric transport characteristics of stressed and non-stressed FeSe monolayers. Transmission spectra, current-voltage characteristic (CVC) and differential conductivity spectra of two-dimensional FeSe nanostructure have been calculated within the framework of the density functional theory and non-equilibrium Green’s functions (DFT + NEGF). It has been shown that the electrophysical properties depend on the geometry of the sample, the substrate, and the lattice constant. On CVC of non-stressed sample in the range from −1.2 V to −1 and from 1.2

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33

AHMED, SHAIKH, GERHARD KLIMECK, DERRICK KEARNEY, MICHAEL MCLENNAN, and M. P. ANANTRAM. "QUANTUM SIMULATIONS OF DUAL GATE MOSFET DEVICES: BUILDING AND DEPLOYING COMMUNITY NANOTECHNOLOGY SOFTWARE TOOLS ON NANOHUB.ORG." International Journal of High Speed Electronics and Systems 17, no. 03 (2007): 485–94. http://dx.doi.org/10.1142/s0129156407004679.

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Undesirable short-channel effects associated with the relentless downscaling of conventional CMOS devices have led to the emergence of new classes of MOSFETs. This has led to new and unprecedented challenges in computational nanoelectronics. The device sizes have already reached the level of tens of nanometers where quantum nature of charge-carriers dominates the device operation and performance. The goal of this paper is to describe an on-going initiative on nanoHUB.org to provide new models, algorithms, approaches, and a comprehensive suite of freely-available web-based simulation tools for

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34

Пузанов, А. С., М. М. Венедиктов, С. В. Оболенский та В. А. Козлов. "Расчетно-экспериментальное моделирование обратимых сбоев ячеек статической памяти субмикронных микросхем при воздействии потоков нейтронов". Физика и техника полупроводников 53, № 9 (2019): 1250. http://dx.doi.org/10.21883/ftp.2019.09.48133.16.

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AbstractThe simulation of reversible single events in test samples of static memory microcircuits with design norms of 0.5, 0.35, 0.25, and 0.1 μm under the effect of neutron fluxes with various energies is performed. It is shown theoretically and experimentally that reversible single events can occur in modern microelectronics and nanoelectronics products under the effect of a fission-spectrum neutron flux caused by the passage of primary recoil atoms and nuclear reaction products along the microcircuit surface perpendicularly to the electric current lines in the near-drain transistor area. A

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35

Cavin, R. K., V. V. Zhirnov, G. I. Bourianoff, et al. "A Long-term View of Research Targets in Nanoelectronics." Journal of Nanoparticle Research 7, no. 6 (2005): 573–86. http://dx.doi.org/10.1007/s11051-005-7528-0.

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36

Zhang, Hengji, Geunsik Lee, Alexandre F. Fonseca, Tammie L. Borders, and Kyeongjae Cho. "Isotope Effect on the Thermal Conductivity of Graphene." Journal of Nanomaterials 2010 (2010): 1–5. http://dx.doi.org/10.1155/2010/537657.

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The thermal conductivity (TC) of isolated graphene with different concentrations of isotope (C13) is studied with equilibrium molecular dynamics method at 300 K. In the limit of pure C12or C13graphene, TC of graphene in zigzag and armchair directions are ~630 W/mK and ~1000W/mK, respectively. We find that the TC of graphene can be maximally reduced by ~80%, in both armchair and zigzag directions, when a random distribution of C12and C13is assumed at different doping concentrations. Therefore, our simulation results suggest an effective way to tune the TC of graphene without changing its atomic

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37

Tamersit, Khalil, Abdellah Kouzou, José Rodriguez, and Mohamed Abdelrahem. "Performance Projection of Vacuum Gate Dielectric Doping-Free Carbon Nanoribbon/Nanotube Field-Effect Transistors for Radiation-Immune Nanoelectronics." Nanomaterials 14, no. 11 (2024): 962. http://dx.doi.org/10.3390/nano14110962.

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This paper investigates the performance of vacuum gate dielectric doping-free carbon nanotube/nanoribbon field-effect transistors (VGD-DL CNT/GNRFETs) via computational analysis employing a quantum simulation approach. The methodology integrates the self-consistent solution of the Poisson solver with the mode space non-equilibrium Green’s function (NEGF) in the ballistic limit. Adopting the vacuum gate dielectric (VGD) paradigm ensures radiation-hardened functionality while avoiding radiation-induced trapped charge mechanisms, while the doping-free paradigm facilitates fabrication flexibility

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38

Raza, Hassan, and Edwin C. Kan. "An extended Hückel theory based atomistic model for graphene nanoelectronics." Journal of Computational Electronics 7, no. 3 (2008): 372–75. http://dx.doi.org/10.1007/s10825-008-0180-z.

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Kortshagen, Uwe, Lorenzo Mangolini, and Ameya Bapat. "Plasma synthesis of semiconductor nanocrystals for nanoelectronics and luminescence applications." Journal of Nanoparticle Research 9, no. 1 (2006): 39–52. http://dx.doi.org/10.1007/s11051-006-9174-6.

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40

LIM, C. S., M. H. HONG, Y. LIN, L. S. TAN, A. SENTHIL KUMAR, and M. RAHMAN. "LARGE AREA PARALLEL SURFACE NANOSTRUCTURING WITH LASER IRRADIATION THROUGH MICROLENS ARRAYS." Surface Review and Letters 17, no. 03 (2010): 383–87. http://dx.doi.org/10.1142/s0218625x10011085.

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In the past decade, the development of nanoelectronics and nano-optics has attracted much interest in surface nanostructuring of semiconductor materials. The irradiation of a microlens array by a laser beam generates many focused light spots, which can act as a direct writing tool on photo-polymer materials. This maskless surface nanostructuring technique enables thousands to millions of identical nano-features to be patterned in a couple of laser pulses. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) images show that nano-features were patterned uniformly on the substrat

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Xie, Qian, Shuai Yuan, Ye Ji, Shilong Feng, Yulan Liu, and Biao Wang. "Electric torsion effect in a ferroelectric nanodot." Applied Physics Letters 121, no. 23 (2022): 232903. http://dx.doi.org/10.1063/5.0126895.

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Polar topologies with exotic textures and functionalities in low-dimensional ferroelectrics are recently drawing extensive attention. Elucidating the mechanical responses caused by the phase transitions under external excitation, especially the torsional response still unclear, is quite significant for the development of ferroelectric actuators. Here, using phase-field simulation, we propose a scheme to produce local torsional force via electric field excitation, namely, the electric torsion effect in a ferroelectric nanodot. The results indicate that the twisting response originating from the

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42

Calo, Ferdinand Michael, Jessa Mae Lazarte, and D’Lanor Rose Bedrijo. "Thermal Conductivity of Buckled and Puckered Arsenene: An Equilibrium Molecular Dynamics (EMD) Simulation." International Journal of Membrane Science and Technology 10, no. 2 (2023): 1354–59. http://dx.doi.org/10.15379/ijmst.v10i2.1417.

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This study aims to calculate the thermal conductivity of buckled and puckered arsene using Molecular Dynamics simulation through Large-scale Atomic/Molecular Massively Parallel Simulation (LAMMPS). Arsenene is the monolayer of arsenic, that belongs to one of its allotropes, the gray metallic arsenic. The temperature varied from 100K, 300K, 500K, and 700K with a fixed dimension of 10nm x 50nm. Also, the length of the material varied from 10nm, 20nm, and 30nm. 40nm and 50nm at a fixed temperature of 300 K with constant width of 10nm. Results show that the main contributor to the increase of ther

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Istlyaup, Assel, Lyudmila Myasnikova, Vladislavs Bezrukovs, Artūras Žalga, and Anatoli I. Popov. "Computer simulation of the electrical properties of carbon nanotubes encapsulated with alkali metal iodide crystals." Low Temperature Physics 50, no. 10 (2024): 898–904. http://dx.doi.org/10.1063/10.0028637.

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The progress of modern electronics largely depends on the discovery and use of new materials with unique properties. One of such promising materials is carbon nanotubes. Their outstanding mechanical, thermal, and electrical properties open up new possibilities for creating small-sized electronic devices and improving the characteristics of existing materials by improving their manufacturing and processing technologies. One of the unique features of carbon nanotubes is their ability to encapsulate other atoms or molecules within their structure. This property can be used to create nanocontainer

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Cavin, R. K., and V. V. Zhirnov. "Silicon Nanoelectronics and Beyond: Reflections from a Semiconductor Industry–government workshop." Journal of Nanoparticle Research 6, no. 2/3 (2004): 137–47. http://dx.doi.org/10.1023/b:nano.0000034745.79206.b7.

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Ying, Yong Jie, and Zaharah Johari. "Simulation and Characterization of Carbon Nanotube-based 2:1 Multiplexer Electrical Properties." Journal of Physics: Conference Series 2622, no. 1 (2023): 012023. http://dx.doi.org/10.1088/1742-6596/2622/1/012023.

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Abstract This paper reports on using simulation to characterize a Carbon Nanotube (CNT) based 2:1 multiplexer (MUX). This study aimed to evaluate the electrical properties, particularly the propagation delay, average power consumption, Power-Delay Product (PDP), and Energy-Delay Product (EDP). Different design approaches namely conventional CMOS, Pass Transistor Logic (PTL) approach, and Gate Diffusion Input (GDI) were adopted. The voltage supply (VDD) and diameter of the CNT are varied to see the effect on the electrical properties. The simulation was carried out using HSPICE. Through simulat

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Cao, Qing. "(Invited) Two-Dimensional Amorphous Carbon Prepared from Solution Precursor As Novel Dielectrics for Nanoelectronics." ECS Meeting Abstracts MA2022-01, no. 9 (2022): 755. http://dx.doi.org/10.1149/ma2022-019755mtgabs.

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Low-dimensional electronic materials such as carbon nanotubes, graphene, and transition-metal chalcogenides have drawn a lot of interest from the aspects of both fundamental studies and practical applications. Their atomic-scale thickness and unique electrical properties make them become promising candidates as the drop-in replacement of conventional bulk electronic materials in future electronic devices to enable better performance and enhanced functionality. Research on low-dimensional electronic materials so far has predominantly focused on crystalline semimetals and semiconductors. However

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Tamersit, Khalil, Abdellah Kouzou, José Rodriguez, and Mohamed Abdelrahem. "Performance Assessment of Ultrascaled Vacuum Gate Dielectric MoS2 Field-Effect Transistors: Avoiding Oxide Instabilities in Radiation Environments." Micromachines 16, no. 1 (2024): 33. https://doi.org/10.3390/mi16010033.

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Gate dielectrics are essential components in nanoscale field-effect transistors (FETs), but they often face significant instabilities when exposed to harsh environments, such as radioactive conditions, leading to unreliable device performance. In this paper, we evaluate the performance of ultrascaled transition metal dichalcogenide (TMD) FETs equipped with vacuum gate dielectric (VGD) as a means to circumvent oxide-related instabilities. The nanodevice is computationally assessed using a quantum simulation approach based on the self-consistent solutions of the Poisson equation and the quantum

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Toral-Lopez, Alejandro, Hernan Santos, Enrique G. Marin, Francisco G. Ruiz, Juan José Palacios, and Andres Godoy. "Multi-scale modeling of 2D GaSe FETs with strained channels." Nanotechnology 33, no. 10 (2021): 105201. https://doi.org/10.1088/1361-6528/ac3ce2.

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Electronic devices based on bidimensional materials (2DMs) are the subject of intense experimental research, that demands a tantamount theoretical activity. The latter must be held up by a varied set of tools able to rationalize, explain and predict the operation principles of the devices. However, in the broad context of multi-scale computational nanoelectronics, there is currently a lack of simulation tools connecting atomistic descriptions with semi-classical mesoscopic device-level simulations and able to properly explain the performance of many state-of-the-art devices. To contribute to f

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Chuan, Mu Wen, Munawar Agus Riyadi, Afiq Hamzah, et al. "Device performances analysis of p-type doped silicene-based field effect transistor using SPICE-compatible model." PLOS ONE 17, no. 3 (2022): e0264483. http://dx.doi.org/10.1371/journal.pone.0264483.

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Moore’s Law is approaching its end as transistors are scaled down to tens or few atoms per device, researchers are actively seeking for alternative approaches to leverage more-than-Moore nanoelectronics. Substituting the channel material of a field-effect transistors (FET) with silicene is foreseen as a viable approach for future transistor applications. In this study, we proposed a SPICE-compatible model for p-type (Aluminium) uniformly doped silicene FET for digital switching applications. The performance of the proposed device is benchmarked with various low-dimensional FETs in terms of the

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Laribi, Asma, and Ahlam Guen Bouazza. "Effect of Chirality and Oxide Thikness on the Performance of a Ballistic CNTFET." International Journal of Electrical and Computer Engineering (IJECE) 8, no. 6 (2018): 4941. http://dx.doi.org/10.11591/ijece.v8i6.pp4941-4950.

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<p>Since the discovery of 1D nano-object, they are constantly revealing significant physical properties. In this regard, carbon nanotube (CNT) is considered as a promising candidate for application in future nanoelectronics devices like carbon nanotube field effect transistor (CNTFET). In this work, the impact of chirality and gate oxide thikness on the electrical characteristics of a CNTFET are studied. The chiralities used are (5, 0), (10, 0), (19, 0), (26, 0), and the gate oxide thikness varied from 1 to 5 nm.This work is based on a numerical simulation program based on surface potent

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