Relevant bibliographies by topics / SiO2 thin films

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'SiO2 thin films'

Author: Grafiati
Published: 28 May 2022
Last updated: 30 July 2025

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Journal articles on the topic "SiO2 thin films"

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Pan, Yongqiang, Huan Liu, Zhuoman Wang, Jinmei Jia, and Jijie Zhao. "Optical Constant and Conformality Analysis of SiO2 Thin Films Deposited on Linear Array Microstructure Substrate by PECVD." Coatings 11, no. 5 (2021): 510. http://dx.doi.org/10.3390/coatings11050510.

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SiO2 thin films are deposited by radio frequency (RF) plasma-enhanced chemical vapor deposition (PECVD) technique using SiH4 and N2O as precursor gases. The stoichiometry of SiO2 thin films is determined by the X-ray photoelectron spectroscopy (XPS), and the optical constant n and k are obtained by using variable angle spectroscopic ellipsometer (VASE) in the spectral range 380–1600 nm. The refractive index and extinction coefficient of the deposited SiO2 thin films at 500 nm are 1.464 and 0.0069, respectively. The deposition rate of SiO2 thin films is controlled by changing the reaction press
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Huang, Ziming, Jiaqi Duan, Minghan Li, Yanping Ma, and Hong Jiang. "Effect of SiO2 Layer Thickness on SiO2/Si3N4 Multilayered Thin Films." Coatings 14, no. 7 (2024): 881. http://dx.doi.org/10.3390/coatings14070881.

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Silicon nitride (Si3N4) materials are widely used in the electronics, optoelectronics, and semiconductor industries, with Si3N4 thin films exhibiting high densities, high dielectric constants, good insulation performance, and good thermal and chemical stability. However, direct deposition of Si3N4 thin films on glass can result in considerable tensile stress and cracking. In this study, magnetron sputtering was used to deposit a Si3N4 thin film on glass, and a silicon dioxide (SiO2) thin film was introduced to reduce the Si3N4 binding force and stress. The effect of the SiO2 layer thickness on
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Wang, Zhan Jie, and Yan Na Chen. "Effect of Substrate on Crystallization of Sol-Gel-Derived Pb(Zr0.52Ti0.48)O3 Thin Films by Microwave Annealing." Materials Science Forum 750 (March 2013): 212–15. http://dx.doi.org/10.4028/www.scientific.net/msf.750.212.

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Amorphous Pb(Zr0.52Ti0.48)O3 (PZT) thin films were deposited on LNO/SiO2/Si and Pt/Ti/SiO2/Si substrates by a sol-gel method and then crystallized by microwave irradiation in the microwave magnetic field. The crystalline phases and microstructures as well as ferroelectric property of the PZT films were investigated, and the effect of substrate on crystallization of PZT thin films heated by microwave annealing was discussed. The PZT films on LNO/SiO2/Si substrate show a highly (100)-preferred orientation, and better ferroelectric property than those on Pt/Ti/SiO2/Si substrate. The results demon
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Zhang, Weiguang, Jijun Li, Yongming Xing, et al. "Experimental Study on the Thickness-Dependent Hardness of SiO2 Thin Films Using Nanoindentation." Coatings 11, no. 1 (2020): 23. http://dx.doi.org/10.3390/coatings11010023.

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SiO2 thin films are widely used in micro-electro-mechanical systems, integrated circuits and optical thin film devices. Tremendous efforts have been devoted to studying the preparation technology and optical properties of SiO2 thin films, but little attention has been paid to their mechanical properties. Herein, the surface morphology of the 500-nm-thick, 1000-nm-thick and 2000-nm-thick SiO2 thin films on the Si substrates was observed by atomic force microscopy. The hardnesses of the three SiO2 thin films with different thicknesses were investigated by nanoindentation technique, and the depen
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Yamabe, Kikuo. "Thin thermally grown SiO2 films." Bulletin of the Japan Institute of Metals 28, no. 1 (1989): 14–21. http://dx.doi.org/10.2320/materia1962.28.14.

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JIANG, H., H. W. LIU, H. YU, F. GAO, J. M. LIU, and C. W. NAN. "DIELECTRIC BEHAVIORS OF ZnFe2O4 – SiO2 COMPOSITE THIN FILMS PREPARED BY SOL-GEL METHOD." International Journal of Modern Physics B 19, no. 15n17 (2005): 2682–86. http://dx.doi.org/10.1142/s0217979205031523.

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The dielectric property of ZnFe2O4 – SiO2 composite thin films deposited on Pt - Ti -SiO2- Si substrates, prepared by sol-gel method, are investigated. It is observed that the thin films consist of ZnFe2O4 nanoparticles embedded in the matrix of SiO2. Such a composite structure exhibits a significantly enhanced dielectric constant with respect to SiO2 thin films without too large dielectric loss enhancement.
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Zhang, Dan, Yifeng Hu, Haipeng You, et al. "High Reliability and Fast-Speed Phase-Change Memory Based on Sb70Se30/SiO2 Multilayer Thin Films." Advances in Materials Science and Engineering 2018 (June 21, 2018): 1–6. http://dx.doi.org/10.1155/2018/9693015.

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Sb70Se30/SiO2 multilayer thin films were applied to improve the thermal stability by RF magnetron sputtering on SiO2/Si (100) substrates. The characteristics of Sb70Se30/SiO2 multilayer thin films were investigated in terms of crystallization temperature, ten years of data retention, and energy bandgap. It is observed that the crystallization temperature, 10-year data retention, and resistance of Sb70Se30/SiO2 multilayer composite thin films exhibited a higher value, suggesting that Sb70Se30/SiO2 multilayer composite thin films have superior thermal stability. The AFM measurement suggests that
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Shen, Kai Bo, Huan Yang, Jian Liu, et al. "Fabrication and Characterization for Innate Super-Hydrophilic SiO2 Thin Films." Materials Science Forum 743-744 (January 2013): 377–81. http://dx.doi.org/10.4028/www.scientific.net/msf.743-744.377.

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Distinguished with photoinduced super-hydrophilic inorganic thin films, non-photoinduced innate super-hydrophilic SiO2 thin films were successfully fabricated in this work. The SiO2 sol was prepared by acid-base two-step sol-gel method. The mix solution containing SiO2 sol and polyethylene glycol (PEG) was coated on glass substrate and then went through thermal treatment to obtain innate super-hydrophilic SiO2 thin films. The films were characterized by atomic force microscopy (AFM), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FT-IR) and contact angle meter. Th
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Kim, Soyoung, Jung-Hwan In, Seon Hoon Kim, et al. "Study of High Transmittance of SiO2/Nb2O5 Multilayer Thin Films Deposited by Plasma-Assisted Reactive Magnetron Sputtering." Applied Sciences 13, no. 24 (2023): 13271. http://dx.doi.org/10.3390/app132413271.

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SiO2/Nb2O5 multilayer thin films were designed for the special application of an aviation lighting system emitting green light. For optical components in this system to meet requirements such as a high transmittance and durability, SiO2/Nb2O5 multilayer thin films of 60 individual layers were fabricated by a plasma-assisted reactive magnetron sputtering method. As a result, the transmittance spectra were confirmed to have a flat top surface and a square bandwidth. The transmittances of the SiO2/Nb2O5 multilayer thin films in the range of 500 nm to 550 nm was approximately 96.14%. The reason fo
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Zhang, Xiao-Ying, Yue Yang, Zhi-Xuan Zhang, et al. "Deposition and Characterization of RP-ALD SiO2 Thin Films with Different Oxygen Plasma Powers." Nanomaterials 11, no. 5 (2021): 1173. http://dx.doi.org/10.3390/nano11051173.

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In this study, silicon oxide (SiO2) films were deposited by remote plasma atomic layer deposition with Bis(diethylamino)silane (BDEAS) and an oxygen/argon mixture as the precursors. Oxygen plasma powers play a key role in the quality of SiO2 films. Post-annealing was performed in the air at different temperatures for 1 h. The effects of oxygen plasma powers from 1000 W to 3000 W on the properties of the SiO2 thin films were investigated. The experimental results demonstrated that the SiO2 thin film growth per cycle was greatly affected by the O2 plasma power. Atomic force microscope (AFM) and
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Dissertations / Theses on the topic "SiO2 thin films"

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Hung, Kwok-kwong. "Electrical characterization of Si-SiO2 interface for thin oxides /." [Hong Kong : University of Hong Kong], 1987. http://sunzi.lib.hku.hk/hkuto/record.jsp?B12232580.

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洪國光 and Kwok-kwong Hung. "Electrical characterization of Si-SiO2 interface for thin oxides." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 1987. http://hub.hku.hk/bib/B31230866.

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Lankford, Maggie E. "Measurement of Thermo-Mechanical Properties of Co-Sputtered SiO2-Ta2O5 Thin Films." University of Dayton / OhioLINK, 2021. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1627653071556618.

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Rosaye, Jean-Yves. "High/low temperature C-V Characterization of defects in ultra thin SiO2 films." Perpignan, 2001. http://www.theses.fr/2001PERP0437.

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Lorsqu'une structure MOS (Métal Oxyde Semiconducteur) est soumise à une perturbation extérieure (exemple : un fort champ électrique, ou une radiation) il y a génération de défauts dans la couche d'oxyde et à l'interface oxyde-semiconducteur. Si on arrive aisément à mesurer séparément les états d'interface (défauts d'interface Si/SIO2) et les défauts d'oxyde à l'aide des méthodes électriques, il nous est actuellement difficile de séparer entre les différents types de défauts d'oxydes (charge positive, négative et pièges de bords). Dans ce travail, on envisage l'utilisation d'une procédure qu'on
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Min, Byoung Koun. "Scanning tunneling microscopic studies of SiO2 thin film supported metal nano-clusters." Diss., Texas A&M University, 2004. http://hdl.handle.net/1969.1/2737.

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This dissertation is focused on understanding heterogeneous metal catalysts supported on oxides using a model catalyst system of SiO2 thin film supported metal nano-clusters. The primary technique applied to this study is scanning tunneling microscopy (STM). The most important constituent of this model catalyst system is the SiO2 thin film, as it must be thin and homogeneous enough to apply electron or ion based surface science techniques as well as STM. Ultra-thin SiO2 films were successfully synthesized on a Mo(112) single crystal. The electronic and geometric structure of the SiO2 thin fil
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Selivanov, N. I., L. G. Samsonova, T. A. Solodova, and T. N. Kopylova. "Photophysical Properties of Acridine in Solutions and SiO2 Thin Films. Materials for Optical Sensors." Thesis, Sumy State University, 2012. http://essuir.sumdu.edu.ua/handle/123456789/35484.

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Experimental and quantum-chemical investigation of the spectral and luminescent properties of acridine, and its protonated form was performed. The electronic absorption and fluorescence spectra of the acridine were studied at room temperature in ethanolic solutions at different pH values and in other solvents of different chemical nature and polarity.The energies of the excited states, the deactivation rate constants for the excited states, and the dipole moments are presented, which were obtained by calculations using the INDO/S method. Sensor properties of acridine immobilized into SiO2
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Caperton, Ricky. "Tailoring Local Conductivity by the Formation of Ag Nanoclusters in SiO2 Xerogel Films." VCU Scholars Compass, 2009. http://scholarscompass.vcu.edu/etd/15.

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Porous silicon dioxide thin films were produced via dip-coating and doped with Ag+ by adding AgNO3 to the dipping solution. Nanoparticles were formed within the pores of these films by UV exposure. Nanoparticle formation was confirmed by UV-visible spectroscopy and Transmission Electron Microscopy (TEM). Conductive Atomic Force Microscopy (CAFM) showed that the conductivity of the films decreased upon exposure to UV. This decrease in the conductivity is most likely due to the clustering of charge carriers. Initially, Ag+ ions are attached to negatively charged pore walls in a dense packing net
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Kaplan, Burkan. "Preparation Of Plzt Thin Films By Chemical Solution Deposition And Their Characterization." Master's thesis, METU, 2005. http://etd.lib.metu.edu.tr/upload/2/12606738/index.pdf.

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ABSTRACT PREPARATION OF PLZT THIN FILMS BY CHEMICAL SOLUTION DEPOSITION AND THEIR CHARACTERIZATION Kaplan, Burkan M.S., Department of Metallurgical and Materials Engineering Supervisor: Prof. Dr. Macit &Ouml<br>zenbaS November 2005, 125 pages In this study, La3+ was substituted into lead zirconate titanate (PZT) system by Pb1-xLax(ZryTi1-y)1-x/4O3 nominal stochiometry and it was processed via chemical solution deposition on (111)-Pt/Ti/SiO2/Si-(100) substrate.PLZT solutions were prepared by mixing two
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Korkmaz, Erdural Beril. "Photocatalytic Antimicrobial And Self-cleaning Properties Of Titania-silica Mixed Oxide Thin Films." Phd thesis, METU, 2012. http://etd.lib.metu.edu.tr/upload/12615137/index.pdf.

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In this study photocatalytic antibacterial and self-cleaning activities of TiO2-SiO2 thin films as a function of TiO2/SiO2 ratios were investigated. TiO2-SiO2 mixed oxides were synthesized by sol-gel method and coated over soda-lime glass plates by dip coating technique. Escherichia coli was used as a model microorganism for the photocatalytic antibacterial tests. Degradation rate of methylene blue (MB) molecules was used to characterize photocatalytic self-cleaning activities of thin film surfaces. The maximum antibacterial activity was achieved over 92 wt% SiO2 containing thin films. Howe
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Coillet, Élodie. "Structural characterization of thin non-crystalline layers for low thermal noise optic." Thesis, Lyon, 2017. http://www.theses.fr/2017LYSE1132/document.

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Prédites en 1916 par Albert Einstein, puis détectées 100 ans plus tard par les collaborations LIGO et VIRGO, les ondes gravitationnelles constituent un outil prometteur pour observer l’univers sur des échelles toujours plus grandes. Cependant, pour accéder à de plus nombreux évènements, une des principales limitations des détecteurs provient du bruit thermique des couches minces composant leurs miroirs, couches minces non cristallines de SiO2 et Ta2O5 dopé TiO2.L’objectif de ce travail est d’étudier l’origine microstructurale du bruit thermique de ces couches en utilisant les spectroscopies vi
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Books on the topic "SiO2 thin films"

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Li, Jian Ping. Studies of electrical properties of Cu/SiO thin films. Brunel University, 1989.

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Rahim, Mohammad Rezaur. Electrical and optical properties of vacuum-deposited Mn/SiOx thin films. Brunel University, 1993.

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Steele, Conrad Bancroft. Some electrical and thermal properties of Au/SiO(x) and SiO(x) thin films. Brunel University, 1990.

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Younki, Jorjik. Some electrical and optical properties of thin SiO/In(2)O(3) films. Brunel University, 1989.

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Sahota, Makhan Singh. Computer simulation of SiOx structure based on thin film Si 2p peaks of x-ray photoelectron spectroscopy. Brunel University, 1992.

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Zagone, Robin L. Linear and nonlinear optical investigation of films: I. Formalism for time resolved multiphoton processes. II. Detection of solid water phase transitions on Si-SiO₂ III. Wave guided CARS spectroscopy. 1995.

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Harf-Bapin, Elisabeth Ines. PECVD of SiO₂-like thin films under continuous wave and pulsed modes. 2001.

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Book chapters on the topic "SiO2 thin films"

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Fujimura, Shuzo, Kenji Ishikawa, and Haruhisa Mori. "Observation of Thin SiO2 Films Using IR-RAS." In The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2. Springer US, 1993. http://dx.doi.org/10.1007/978-1-4899-1588-7_11.

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Wolters, D. R., and A. T. A. Zegers-van Duynhoven. "Electronic Charge Transport in Thin SiO2 Films." In The Physics and Technology of Amorphous SiO2. Springer US, 1988. http://dx.doi.org/10.1007/978-1-4613-1031-0_52.

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Chonko, Mark, David Vandenberg, and Douglas Keitz. "The Integrity of Very Thin Silicon Films Deposited on SIO2." In The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2. Springer US, 1993. http://dx.doi.org/10.1007/978-1-4899-1588-7_39.

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Warren, W. L., J. Kanicki, P. J. McWhorter, and E. H. Poindexter. "Optically Induced Nitrogen Dangling Bonds in Amorphous Hydrogenated Silicon Nitride Thin Films." In The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2. Springer US, 1993. http://dx.doi.org/10.1007/978-1-4899-1588-7_46.

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Gurtov, V. A., and A. I. Nazarov. "Radiation-Induced Conductivity of Thin Silicon Dioxide Films on Silicon." In The Physics and Technology of Amorphous SiO2. Springer US, 1988. http://dx.doi.org/10.1007/978-1-4613-1031-0_60.

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Tsu, D. V., S. S. Kim, and G. Lucovsky. "Deposition of SiO2 Thin Films by Remote Plasma Enhanced Chemical Vapor Deposition (Remote PECVD)." In The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer US, 1988. http://dx.doi.org/10.1007/978-1-4899-0774-5_13.

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Wright, O. B., T. Hyoguchi, and K. Kawashima. "Picosecond Photoacoustics in Thin Films of SiO2 and Si3N4." In Photoacoustic and Photothermal Phenomena III. Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-540-47269-8_78.

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Cartier, E., D. Arnold, E. Eklund, D. J. DiMaria, and F. R. McFeely. "Hot-Electron Dynamics in Thin Silicon Dioxide Films Studied by Photon-Induced Electron Transmission." In The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2. Springer US, 1993. http://dx.doi.org/10.1007/978-1-4899-1588-7_48.

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Samoilovich, M. I., L. I. Ivleva, M. Yu Tsvetkov, S. M. Kleshcheva, and A. V. Gur’yanov. "Single Crystal SBN:Yb / Opal Matrix (SiO2):Er Composite as a Nanophotonic Structure." In Nanostructured Thin Films and Nanodispersion Strengthened Coatings. Springer Netherlands, 2004. http://dx.doi.org/10.1007/1-4020-2222-0_28.

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Dias, A. G., E. Bustarret, and R. C. da Silva. "Evidence for Oxygen Bubbles in Fluorine Doped Amorphous Silicon Dioxide Thin Films." In The Physics and Technology of Amorphous SiO2. Springer US, 1988. http://dx.doi.org/10.1007/978-1-4613-1031-0_48.

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Conference papers on the topic "SiO2 thin films"

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Tajima, Naoya, Takayuki Matsudaira, and Hiroshi Murotani. "Development of Refractive Index Control Technology for Optical Thin Films by a Combination of Sputtering and Electron Beam Evaporation." In Optical Interference Coatings. Optica Publishing Group, 2025. https://doi.org/10.1364/oic.2025.wa.2.

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By controlling the refractive index of SiO2 optical thin films using a deposition system that combines sputtering and EB evaporation, 51-layer SiO2 mono-material multilayer coatings, comprising the same deposition material as the substrate, were fabricated.
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Yuhang, Yang, Taisei Wakamiya, Naoya Tajima, Takayuki Matsudaira, and Hiroshi Murotani. "Laser Resistance of Low-Density SiO2 Optical Thin Films by Sputtering and Electron Beam Deposition." In Optical Interference Coatings. Optica Publishing Group, 2025. https://doi.org/10.1364/oic.2025.me.8.

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This study evaluates the 355 nm laser damage threshold of single-layer SiO2 films with varying refractive indices, fabricated via simultaneous electron beam evaporation and direct current pulse sputtering deposition.
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Jen, Yi-Jun, Wei-Chien Wang, Jia-Liang You, and Meng-Jie Lin. "Tuning circular dichroism by capping SiO2 nanohelixes upon silver nanohelixes." In Nanostructured Thin Films XI, edited by Tom G. Mackay and Akhlesh Lakhtakia. SPIE, 2018. http://dx.doi.org/10.1117/12.2318988.

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Blanco, E., R. Litrán, M. Ramírez-del-Solar, et al. "Nonlinear absorption in CuPc-SiO2 Composite." In Organic Thin Films for Photonic Applications. Optica Publishing Group, 1997. http://dx.doi.org/10.1364/otfa.1997.the.2.

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Recently macrocyclic organic dyes have attracted a lot of attention as possible candidates for applications in optical power limiters and pulse shaping devices. The fundamental requirement for power limiting is that the system must exhibit fluence dependent reverse saturable absorption. Copper Pthalocyanines possess a larger excited state absorption cross section than a ground state absorption cross section. They are thus suitable candidates for limiting applications. Most of the nonlinear optical studies have been done for solutions of the dyes1. For applications such as intracavity pulse sha
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Ghazaryan, Lilit, and Adriana Viorica Szeghalmi. "Reproducibility and stability of nanoporous SiO2 thin film coatings." In Advances in Optical Thin Films VI, edited by Michel Lequime, H. Angus Macleod, and Detlev Ristau. SPIE, 2018. http://dx.doi.org/10.1117/12.2313847.

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Lindsay, Connor, Carlos García Nuñez, Lewis S. Fleming, et al. "Microwave plasma assisted sputtering of a combined Ta2O5/SiO2 and a-Si:H/SiO2 two stack optical coating design concept for gravitational wave detectors." In Advances in Optical Thin Films VIII, edited by Michel Lequime and Detlev Ristau. SPIE, 2024. http://dx.doi.org/10.1117/12.3022968.

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García-Macedo, Jorge A., and Gerardo S. Gámez. "Third order non-linear response as function of the laser power in SiO2:DR1 mesostructured and amorphous films." In Nanostructured Thin Films X, edited by Tom G. Mackay, Akhlesh Lakhtakia, and Yi-Jun Jen. SPIE, 2017. http://dx.doi.org/10.1117/12.2274722.

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Follert, Roman, Ulf Seemann, Ernesto Oliva, et al. "Si/SiO2-based filter coatings for astronomical applications in the IR spectral range." In Advances in Optical Thin Films VI, edited by Michel Lequime, H. Angus Macleod, and Detlev Ristau. SPIE, 2018. http://dx.doi.org/10.1117/12.2311310.

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DUTOIT, M., E. GOIN, N. NOVKOVSKI, I. AIZENBERG, J. MANTHEY, and J. SOLO DE ZALDIVAR. "Thin Nitrided SiO2 Films for EEPROMs." In 1990 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1990. http://dx.doi.org/10.7567/ssdm.1990.c-2-5.

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Sankur, H., and W. Gunning. "Stress and structure in mixed thin TiO2-SiO2 Films." In OSA Annual Meeting. Optica Publishing Group, 1989. http://dx.doi.org/10.1364/oam.1989.mnn4.

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In this paper we discuss the stress and sorbed moisture in mixed SiO2-TiO2 thin films and the dependence of these on deposition temperature and pressure, chemical composition of the film, and annealing conditions. SiO2 and TiO2 commonly used visible range optical thin film materials in gradient-index coatings. Films deposited by evaporative techniques have a porous microstructure. This microstructure and the sorption of moisture in the pores give rise to mechanical stress, which can cause catastrophic failure of the coating. Therefore, techniques to eliminate moisture sorption and to minimize
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Reports on the topic "SiO2 thin films"

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Fitch, J. T., E. Kobeda, G. Lucovsky, and E. A. Irene. Effects of Thermal History on Stress-Related Properties of Very Thin Films of Thermally Grown Silicon Dioxide, SiO2. Defense Technical Information Center, 1989. http://dx.doi.org/10.21236/ada206547.

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Franke, J., M. O. Liedke, P. Dahmen, et al. Influence of coating structure of an SiOx barrier coating on a PET substrate on water vapor permeation activation energy. Universidad de los Andes, 2024. https://doi.org/10.51573/andes.pps39.gs.nn.1.

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The application of plasma polymerized silicon-based coatings on plastic substrates is an effective way to adjust the permeability of the substrate. However, the permeation mechanisms are yet not fully understood. Here, the activation energy of permeation can offer valuable insights. In order to understand how the activation energy of permeation depends on the coating structure, five silicon-based coatings with varying oxygen content were analyzed, which led to property modifications ranging from silicon-oxidic to silicon-organic. Positron annihilation spectroscopy was employed to characterize
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