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Relevant bibliographies by topics / Solar cells, Thin film, Tin sulfide, SnS

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Journal articles

Academic literature on the topic 'Solar cells, Thin film, Tin sulfide, SnS'

Author: Grafiati

Published: 11 March 2023

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Journal articles on the topic "Solar cells, Thin film, Tin sulfide, SnS"

1

Nair, P. K., A. R. Garcia-Angelmo, and M. T. S. Nair. "Cubic and orthorhombic SnS thin-film absorbers for tin sulfide solar cells." physica status solidi (a) 213, no. 1 (2015): 170–77. http://dx.doi.org/10.1002/pssa.201532426.

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2

Mukherjee, A., and P. Mitra. "Structural and optical characteristics of SnS thin film prepared by SILAR." Materials Science-Poland 33, no. 4 (2015): 847–51. http://dx.doi.org/10.1515/msp-2015-0118.

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AbstractSnS thin films were grown on glass substrates by a simple route named successive ion layer adsorption and reaction (SILAR) method. The films were prepared using tin chloride as tin (Sn) source and ammonium sulfide as sulphur (S) source. The structural, optical and morphological study was done using XRD, FESEM, FT-IR and UV-Vis spectrophotometer. XRD measurement confirmed the presence of orthorhombic phase. Particle size estimated from XRD was about 45 nm which fitted well with the FESEM measurement. The value of band gap was about 1.63 eV indicating that SnS can be used as an important

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3

Sajadnia, Mohsen, Sajjad Dehghani, Zahra Noraeepoor, and Mohammad Hossein Sheikhi. "Highly improvement in efficiency of Cu(In,Ga)Se2 thin film solar cells." World Journal of Engineering 17, no. 4 (2020): 527–33. http://dx.doi.org/10.1108/wje-02-2020-0068.

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Purpose The purpose of this study is to design and optimize copper indium gallium selenide (CIGS) thin film solar cells. Design/methodology/approach A novel bi-layer CIGS thin film solar cell based on SnS is designed. To improve the performance of the CIGS based thin film solar cell a tin sulfide (SnS) layer is added to the structure, as back surface field and second absorbing layer. Defect recombination centers have a significant effect on the performance of CIGS solar cells by changing recombination rate and charge density. Therefore, performance of the proposed structure is investigated in

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4

Hegde, S. S., and K. Ramesh. "Advances in low-cost and nontoxic materials based solar cell devices." Journal of Physics: Conference Series 2070, no. 1 (2021): 012043. http://dx.doi.org/10.1088/1742-6596/2070/1/012043.

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Abstract Photovoltaics (PV) have become increasingly popular and reached as the third-largest renewable energy source. Thin-film solar cells made from earth-abundant, inexpensive and environmentally friendly materials are needed to replace the current PV technologies whose large-scale applications are limited by material and/or resource constraints. Near optimum direct optical bandgap of 1.3 eV, high absorption coefficient (>104 cm−1), less toxic, and abundant raw resources along with considerable scalability have made tin sulfide (SnS) as a strategic choice for next-generation PVs. In this

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5

Patel, T. H. "Effect of Temperature on Structural and Optical Properties of Chemically Deposited Tin Sulfide Thin Films Suitable for Photovoltaic Structures." Advanced Materials Research 665 (February 2013): 93–100. http://dx.doi.org/10.4028/www.scientific.net/amr.665.93.

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SnS (tin sulphide) is of interest for use as an absorber layer and the wider energy band gap phases e.g. SnS2, Sn2S3and Sn/S/O alloys of interest as Cd-free buffer layers for use in thin film solar cells. Thin films of tin sulphide have been deposited using CBD at three different bath temperatures (27, 35 and 45 °C) onto microscope glass substrates. The X ray diffraction (XRD) analysis of the deposited films reveled that all films has orthorhombic SnS phase as dominant one with preferred orientations along (111) direction. The temperature influence on the crystalline nature and the presence of

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6

Khalkar, Arun, Kwang-Soo Lim, Seong-Man Yu, Dong-Wook Shin, Tae-Sik Oh, and Ji-Beom Yoo. "Effects of Sulfurization Pressure on the Conversion Efficiency of Cosputtered Cu2ZnSnS4Thin Film Solar Cells." International Journal of Photoenergy 2015 (2015): 1–7. http://dx.doi.org/10.1155/2015/750846.

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We report herein Cu2ZnSnS4(CZTS) thin film solar cells with 6.75% conversion efficiency, without an antireflection coating. The CZTS precursors have been prepared by cosputtering using three different targets on Mo-coated substrates: copper (Cu), tin sulfide (SnS), and zinc (Zn). The postsulfurization was carried out at different pressures in a H2S/N2environment at 550°C for one hour. A comparative study on the performances of solar cells with CZTS absorber layers prepared at different sulfurization pressures was carried out. The device efficiency of 1.67% using CZTS absorber and low pressure

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7

Ballipinar, Faruk, and Alok C. Rastogi. "Single-step organic vapor phase sulfurization synthesis of p-SnS photo-absorber for graded band-gap thin film heterojunction solar cells with n-ZnO1-x Sx." MRS Advances 1, no. 41 (2016): 2801–6. http://dx.doi.org/10.1557/adv.2016.325.

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ABSTRACTTin sulfide has emerged as a promising solar absorber among the IV-VI binary compound which is earth-abundant and non-toxic. This research provides a new perspective on synthesis of photosensitive monophasic SnS films by organic chemical vapor sulfurization of Sn thin film. S-radicals formed by closed space pyrolysis of di-tert-butyl disulfide (TBDS) diffusively react with Sn to produce SnS film. SnS being an amphoteric semiconductor converts to n-type by trivalent Sb and Bi dopants. The organic vapor sulfurization method described in this research facilitates single-step synthesis of

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8

Ballipinar, Faruk, and A. C. Rastogi. "Tin sulfide (SnS) semiconductor photo-absorber thin films for solar cells by vapor phase sulfurization of Sn metallic layers using organic sulfur source." Journal of Alloys and Compounds 728 (December 2017): 179–88. http://dx.doi.org/10.1016/j.jallcom.2017.08.295.

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9

Ballipinar, Faruk. "Tin sulfide (SnS) thin-film solar cells deposited by organic chemical vapor sulfurization based on CdS and high transmittance Cd(S,O) n-type layers with the superstrate device structure." MRS Communications 10, no. 4 (2020): 660–66. http://dx.doi.org/10.1557/mrc.2020.78.

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10

Reddy, N. Koteeswara, M. Devika, K. R. Gunasekhar, and E. S. R. Gopal. "Fabrication of Photovoltaic Devices Using ZnO Nanostructures and SnS Thin Films." Nano 11, no. 07 (2016): 1650077. http://dx.doi.org/10.1142/s1793292016500776.

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The development of nontoxic and cost-effective solar cell devices is one of the challenging tasks even now. With this objective, solar cell devices using tin mono sulfide (SnS) thin films and zinc oxide (ZnO) nanostructures with a superstrate configuration of ITO/ZnO film/ZnO nanorods/SnS film/Zn have been fabricated and their photovoltaic properties have been investigated. Vertically aligned ZnO nanostructures were grown on indium doped tin oxide substrate by chemical solution method and then, SnS thin films were deposited by thermal evaporation method. A typical solar cell device exhibited s

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