Relevant bibliographies by topics / Spin dependent tunneling

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  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers
  5. Reports

Academic literature on the topic 'Spin dependent tunneling'

Author: Grafiati
Published: 4 June 2021
Last updated: 25 July 2025

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Journal articles on the topic "Spin dependent tunneling"

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Levy, Peter M., and Shufeng Zhang. "Spin dependent tunneling." Current Opinion in Solid State and Materials Science 4, no. 2 (1999): 223–29. http://dx.doi.org/10.1016/s1359-0286(99)00008-x.

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Noor, Fatimah A., Ezra Nabila, Euis Sustini, and Khairurrijal. "Electron Spin-Dependent Tunneling Current through a Trapezoidal Potential Barrier under Airy Wavefunction Approach." Key Engineering Materials 833 (March 2020): 152–56. http://dx.doi.org/10.4028/www.scientific.net/kem.833.152.

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In this paper, an analytical expression of the electron spin-dependent tunneling current through a potential barrier by applying a bias voltage was investigated. An Airy wavefunction was applied to derive the transmittance through the barrier by considering a zinc-blende material, which depends on the spin states indicated as ‘up’ and ‘down’. The obtained transmittance was employed to compute the polarization and spin-dependent tunneling current. The spin-dependent tunneling current was then observed at various bias voltages and temperatures. It was shown that the spin-polarized current increa
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Gerber, A. "Spin-dependent scattering versus spin-dependent tunneling in heterogeneous ferromagnets." Physica B: Condensed Matter 280, no. 1-4 (2000): 331–32. http://dx.doi.org/10.1016/s0921-4526(99)01723-8.

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Sidorova, T. N., A. L. Danilyuk, and V. E. Borisenko. "Spin-dependant tunneling to the surface states of titanium dioxide." Doklady of the National Academy of Sciences of Belarus 64, no. 6 (2020): 670–77. http://dx.doi.org/10.29235/1561-8323-2020-64-6-670-677.

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Results of the simulation of spin-dependant tunneling of electrons to the surface states of the titanium dioxide, which are created by adsorbed organic impurities are performed. Tunneling transparency for sunlight generated electrons is calculated by the Phase function method. A ferromagnetic film is considered to be an injector of spin-dependent electrons to the titanium dioxide. It is shown that electron spin polarization at the surface states reaches 10–25 %. It can contribute to the spin enhanced catalysis peeling a surface from organic impurities.
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Sidorova, T. N., A. L. Danilyuk, and V. E. Borisenko. "Spin-dependant tunneling to the surface states of titanium dioxide." Doklady of the National Academy of Sciences of Belarus 64, no. 6 (2020): 670–77. http://dx.doi.org/10.29235/1561-8323-2020-64-6-670-677.

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Results of the simulation of spin-dependant tunneling of electrons to the surface states of the titanium dioxide, which are created by adsorbed organic impurities are performed. Tunneling transparency for sunlight generated electrons is calculated by the Phase function method. A ferromagnetic film is considered to be an injector of spin-dependent electrons to the titanium dioxide. It is shown that electron spin polarization at the surface states reaches 10–25 %. It can contribute to the spin enhanced catalysis peeling a surface from organic impurities.
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Sharma, Manish, Shan X. Wang, and Janice H. Nickel. "Inversion of Spin Polarization and Tunneling Magnetoresistance in Spin-Dependent Tunneling Junctions." Physical Review Letters 82, no. 3 (1999): 616–19. http://dx.doi.org/10.1103/physrevlett.82.616.

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Samanta, Kartik, and Evgeny Y. Tsymbal. "Symmetry-controlled SrRuO3/SrTiO3/SrRuO3 magnetic tunnel junctions: spin polarization and its relevance to tunneling magnetoresistance." Journal of Physics: Condensed Matter 36, no. 49 (2024): 495802. http://dx.doi.org/10.1088/1361-648x/ad765f.

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Abstract Magnetic tunnel junctions (MTJs), that consist of two ferromagnetic electrodes separated by an insulating barrier layer, have non-trivial fundamental properties associated with spin-dependent tunneling. Especially interesting are fully crystalline MTJs where spin-dependent tunneling is controlled by the symmetry group of wave vector. In this work, using first-principles quantum-transport calculations, we explore spin-dependent tunneling in fully crystalline SrRuO3/SrTiO3/SrRuO3 (001) MTJs and predict tunneling magnetoresistance (TMR) of nearly 3000%. We demonstrate that this giant TMR
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Dempsey, K. J., A. T. Hindmarch, C. H. Marrows, et al. "Spin-dependent tunneling through NiFe nanoparticles." Journal of Applied Physics 105, no. 7 (2009): 07C923. http://dx.doi.org/10.1063/1.3072721.

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Davis, A. H., and J. M. MacLaren. "Spin dependent tunneling at finite bias." Journal of Applied Physics 87, no. 9 (2000): 5224–26. http://dx.doi.org/10.1063/1.373302.

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Schelp, L. F., A. Fert, F. Fettar, et al. "Spin-dependent tunneling with Coulomb blockade." Physical Review B 56, no. 10 (1997): R5747—R5750. http://dx.doi.org/10.1103/physrevb.56.r5747.

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Dissertations / Theses on the topic "Spin dependent tunneling"

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Lin, Ran. "Organic spintronic devices utilizing spin-injection, spin-tunneling and spin-dependent transport." Diss., University of Iowa, 2013. https://ir.uiowa.edu/etd/5015.

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Spintronics, also known as spin electronics, or magnetoelectronics, refers to the study of the role that electron and (less frequently) nuclear spins play in solid state physics, and a group of devices that specifically exploit both the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge. As a principal type of spintronic device, a spin-valve is a device that uses ferromagnetic electrodes to polarize and analyze the electronic spins. The electrical resistance of the device depends sensitively on the relative magnetization of its t
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Richter, Ralf. "Logic gates realized with spin dependent tunneling elements." [S.l. : s.n.], 2002. http://deposit.ddb.de/cgi-bin/dokserv?idn=966609883.

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Iacovita, Cristian. "Spin-dependent tunneling into single cobalt-phthalocyanine molecules." Strasbourg, 2009. http://www.theses.fr/2009STRA6058.

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Cette thèse présente une étude des propriétés électroniques polarisés en spin d'une molécule individuélle de cobalt-phthalocyanine (CoPc), qui sont potentiellement intéressantes pour le domaine émergeant de l'électronique de spin. Les résultats expérimentaux sont analysés par des calculs de type DFT en collaborartion avec J. Kortus (Université Technique de Freiberg, Allemagne). Les molécules de CoPc ont été déposés sur des surfaces non-magnétiques et magnétiques, pour ensuite être individuellement étudiés à basse température par un microscope à effet tunnel. Deux aspects fondamentaux sont abor
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Iacovita, Cristian Bucher Jean-Pierre. "Spin-dependent tunneling into single cobalt-phthalocyanine molecules." Strasbourg : Université de Strasbourg, 2009. http://eprints-scd-ulp.u-strasbg.fr:8080/1162/01/IACOVITA_Cristian_2009.pdf.

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Wei, Yaguang. "Spin-dependent electron transport in nanoscale samples." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2007. http://hdl.handle.net/1853/26498.

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Thesis (Ph.D)--Physics, Georgia Institute of Technology, 2008.<br>Committee Chair: Dragomir Davidovic; Committee Member: Alexei Marchenkov; Committee Member: David Citrin; Committee Member: Elisa Riedo; Committee Member: Walter A. de Heer. Part of the SMARTech Electronic Thesis and Dissertation Collection.
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Dang, Thi Huong. "Interfacial skew tunneling in group III-V and group IV semiconductors driven by exchange and spin-orbit interactions; Study in the frame of an extended k.p theory." Thesis, Université Paris-Saclay (ComUE), 2016. http://www.theses.fr/2016SACLX089/document.

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Nous avons étudié par des méthodes numériques et en théorie k.p avancée les propriétés tunnel d’électrons et de trous dans des systèmes modèles et hétérostructures composés de semi-conducteurs impliquant des interactions spin-orbite de volume. Nous démontrons que le couplage entre les interactions spin-orbite et d’échange à l’interface de jonctions tunnel résulte en un fort contraste de transmission de porteurs selon le signe de la composante de leur vecteur d’onde dans le plan de la jonction. Cet effet conduit à un effet tunnel anormal d’interface que nous appelons « Effet Hall Tunnel Anormal
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Halisdemir, Ufuk. "Probing the impact of structural defects on spin dependent tunneling using photons." Thesis, Strasbourg, 2016. http://www.theses.fr/2016STRAE018/document.

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L’étude de l’impact des défauts sur les propriétés électriques des semi-conducteurs a joué un rôle crucial dans la révolution des technologies de l’information dans le milieu du 20ème siècle. Jusqu’ici, la course à la miniaturisation a permis de répondre à la demande croissante en termes de puissance de calcul. Cependant, cette stratégie est vouée à rencontrer des limites physiques qu’il ne sera pas possible de surpasser, c’est pourquoi de nouvelles approches sont nécessaire. Dans ce nouveau paradigme de recherche, les dispositifs électroniques à base d’oxydes sont des candidats prometteurs af
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Wolter, Boris [Verfasser]. "Magnetic Atom Manipulation and Spin-dependent Atomic Friction Investigated by Spin-polarized Scanning Tunneling Microscopy and Monte Carlo Simulations / Boris Wolter." München : Verlag Dr. Hut, 2014. http://d-nb.info/1055863281/34.

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Nguyen, Thi Lam Hoai. "Propriétés de spin des états évanescents et effet tunnel dans les semi-conducteurs." Phd thesis, Ecole Polytechnique X, 2010. http://pastel.archives-ouvertes.fr/pastel-00005945.

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On étudie les propriétés de spin des états évanescents d'un semi-conducteur dépourvu de centre d'inversion. La topologie particulière des bandes évanescentes qui résulte de l'interaction spin-orbite est à l'origine d'un l'effet tunnel anormal. La nature même du processus tunnel devient très dépendante de l'orientation cristallographique de la barrière. Deux cas typiques sont analysés : tunneling sous incidence oblique sur une barrière orientée selon la direction [001] et tunneling sous incidence normale au travers d'une barrière orientée dans la direction [110]. Dans le premier cas, un process
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Frey, Alexander [Verfasser], and Karl [Akademischer Betreuer] Brunner. "Spin-Dependent Tunneling and Heterovalent Heterointerface Effects in Diluted Magnetic II-VI Semiconductor Heterostructures / Alexander Frey. Betreuer: Karl Brunner." Würzburg : Universitätsbibliothek der Universität Würzburg, 2013. http://d-nb.info/1037311388/34.

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Book chapters on the topic "Spin dependent tunneling"

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Tondra, Mark, Dexin Wang, and Zhenghong Qian. "Device Applications Using Spin Dependent Tunneling and Nanostructured Materials." In Nanostructured Magnetic Materials and Their Applications. Springer Berlin Heidelberg, 2002. http://dx.doi.org/10.1007/3-540-36872-8_16.

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Palii, Andrew, Boris Tsukerblat, Juan Modesto Clemente-Juan, and Eugenio Coronado. "Coherent Spin Dependent Landau-Zener Tunneling in Mixed Valence Dimers." In Vibronic Interactions and the Jahn-Teller Effect. Springer Netherlands, 2011. http://dx.doi.org/10.1007/978-94-007-2384-9_18.

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Buekenhoudt, A., and L. Van Gerven. "The Temperature Dependence of the Correlation Time of Slowly Tunneling Methylgroups, Derived from Spin Conversion and Spin-Lattice Relaxation Measurements." In 25th Congress Ampere on Magnetic Resonance and Related Phenomena. Springer Berlin Heidelberg, 1990. http://dx.doi.org/10.1007/978-3-642-76072-3_297.

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Chen, C. Julian. "Tunneling Phenomenon." In Introduction to Scanning Tunneling Microscopy. Oxford University Press, 2021. http://dx.doi.org/10.1093/oso/9780198856559.003.0002.

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This chapter presents basic experimental methods and the basic theory of tunneling. The classical metal-insulator-metal tunneling junction experiment of Giaever, designed to verify the Bardeen-Cooper-Schrieffer theory of superconductivity, is the motivation for Bardeen to invent his perturbation theory of tunneling. That Bardeen theory then became the starting point of the most useful models of STM. Section 2.2 presents the Bardeen tunneling theory from time-dependent perturbation theory of quantum mechanics, starting from a one-dimensional case, then proceeds to three-dimensional version with
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Swagten, H. J. M. "Chapter One Spin-Dependent Tunneling in Magnetic Junctions." In Handbook of Magnetic Materials. Elsevier, 2007. http://dx.doi.org/10.1016/s1567-2719(07)17001-3.

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Conference papers on the topic "Spin dependent tunneling"

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"Spin dependent tunneling junctions with ferromagnetic triple-barrier resonant-tunneling spin filter." In Digests of INTERMAG 2003. International Magnetics Conference. IEEE, 2003. http://dx.doi.org/10.1109/intmag.2003.1230806.

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Isakovic, A. F., and G. W. Hitt. "Voltage dependent spin tunneling and spin relaxation in spin-leds." In 2011 IEEE GCC Conference and Exhibition (GCC). IEEE, 2011. http://dx.doi.org/10.1109/ieeegcc.2011.5752489.

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Drouhin, Henri-Jean, Jean-Eric Wegrowe, T. L. Hoai Nguyen, and Guy Fishman. "Spin-dependent tunneling through a spin-orbit-split barrier." In Integrated Optoelectronic Devices 2007, edited by Manijeh Razeghi and Gail J. Brown. SPIE, 2007. http://dx.doi.org/10.1117/12.717607.

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Drouhin, Henri-Jean, Guy Fishman, T. L. Hoai Nguyen, and Jean-Eric Wegrowe. "Spin-dependent tunneling through a spin-orbit-split barrier." In NanoScience + Engineering, edited by Manijeh Razeghi, Henri-Jean M. Drouhin, and Jean-Eric Wegrowe. SPIE, 2008. http://dx.doi.org/10.1117/12.797997.

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Richard, Soline. "Spin-Dependent Tunneling In III-V Semiconductors." In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994610.

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Saito, Y., K. Nakajima, and K. Inomata. "Spin-dependent tunneling in double tunnel junctions." In IEEE International Magnetics Conference. IEEE, 1999. http://dx.doi.org/10.1109/intmag.1999.837550.

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Rozhansky, Igor. "Resonant spin-dependent tunneling in heterostructures (Conference Presentation)." In Spintronics XI, edited by Henri Jaffrès, Henri-Jean Drouhin, Jean-Eric Wegrowe, and Manijeh Razeghi. SPIE, 2018. http://dx.doi.org/10.1117/12.2326768.

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Hu, B., K. Moges, H. X. Liu, Y. Honda, T. Uemura, and M. Yamamoto. "Temperature Dependence of Spin-Dependent Tunneling Conductance of Magnetic Tunnel Junctions with Highly Spin-Polarized Electrodes." In 2015 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2015. http://dx.doi.org/10.7567/ssdm.2015.ps-12-6.

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Ryan, J. T., P. M. Lenahan, A. T. Krishnan, and S. Krishnan. "Investigation of SILC via Energy Resolved spin dependent tunneling spectroscopy." In 2009 IEEE International Integrated Reliability Workshop (IRW). IEEE, 2009. http://dx.doi.org/10.1109/irws.2009.5383043.

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Yassievich, I. N., P. S. Alekseev, S. A. Tarasenko, and V. I. Perel’. "Effects of Spin-Dependent Tunneling in III-V Semiconductor Heterostructures." In PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. AIP, 2007. http://dx.doi.org/10.1063/1.2730358.

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Reports on the topic "Spin dependent tunneling"

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Daughton, James M., Cathy Nordman, Dave Brownell, and Dan Reed. PT Spin Dependent Tunneling Sensor. Defense Technical Information Center, 1999. http://dx.doi.org/10.21236/ada370287.

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Tondra, Mark. Spin Dependent Tunneling Magnetic Field Sensors for Clutter-Limited Detection. Defense Technical Information Center, 2002. http://dx.doi.org/10.21236/ada405875.

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Butler, W. H. Atomic Scale Structure of Ultrathin Magnetic Multilayers and Correlation with Resistance and Giant Magnetoresistance and Spin-Dependent Tunneling. Office of Scientific and Technical Information (OSTI), 2001. http://dx.doi.org/10.2172/777628.

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