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Journal articles on the topic 'Spin dependent tunneling'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 July 2025

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1

Levy, Peter M., and Shufeng Zhang. "Spin dependent tunneling." Current Opinion in Solid State and Materials Science 4, no. 2 (1999): 223–29. http://dx.doi.org/10.1016/s1359-0286(99)00008-x.

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2

Noor, Fatimah A., Ezra Nabila, Euis Sustini, and Khairurrijal. "Electron Spin-Dependent Tunneling Current through a Trapezoidal Potential Barrier under Airy Wavefunction Approach." Key Engineering Materials 833 (March 2020): 152–56. http://dx.doi.org/10.4028/www.scientific.net/kem.833.152.

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In this paper, an analytical expression of the electron spin-dependent tunneling current through a potential barrier by applying a bias voltage was investigated. An Airy wavefunction was applied to derive the transmittance through the barrier by considering a zinc-blende material, which depends on the spin states indicated as ‘up’ and ‘down’. The obtained transmittance was employed to compute the polarization and spin-dependent tunneling current. The spin-dependent tunneling current was then observed at various bias voltages and temperatures. It was shown that the spin-polarized current increa

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3

Gerber, A. "Spin-dependent scattering versus spin-dependent tunneling in heterogeneous ferromagnets." Physica B: Condensed Matter 280, no. 1-4 (2000): 331–32. http://dx.doi.org/10.1016/s0921-4526(99)01723-8.

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4

Sidorova, T. N., A. L. Danilyuk, and V. E. Borisenko. "Spin-dependant tunneling to the surface states of titanium dioxide." Doklady of the National Academy of Sciences of Belarus 64, no. 6 (2020): 670–77. http://dx.doi.org/10.29235/1561-8323-2020-64-6-670-677.

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Results of the simulation of spin-dependant tunneling of electrons to the surface states of the titanium dioxide, which are created by adsorbed organic impurities are performed. Tunneling transparency for sunlight generated electrons is calculated by the Phase function method. A ferromagnetic film is considered to be an injector of spin-dependent electrons to the titanium dioxide. It is shown that electron spin polarization at the surface states reaches 10–25 %. It can contribute to the spin enhanced catalysis peeling a surface from organic impurities.

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5

Sidorova, T. N., A. L. Danilyuk, and V. E. Borisenko. "Spin-dependant tunneling to the surface states of titanium dioxide." Doklady of the National Academy of Sciences of Belarus 64, no. 6 (2020): 670–77. http://dx.doi.org/10.29235/1561-8323-2020-64-6-670-677.

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Results of the simulation of spin-dependant tunneling of electrons to the surface states of the titanium dioxide, which are created by adsorbed organic impurities are performed. Tunneling transparency for sunlight generated electrons is calculated by the Phase function method. A ferromagnetic film is considered to be an injector of spin-dependent electrons to the titanium dioxide. It is shown that electron spin polarization at the surface states reaches 10–25 %. It can contribute to the spin enhanced catalysis peeling a surface from organic impurities.

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6

Sharma, Manish, Shan X. Wang, and Janice H. Nickel. "Inversion of Spin Polarization and Tunneling Magnetoresistance in Spin-Dependent Tunneling Junctions." Physical Review Letters 82, no. 3 (1999): 616–19. http://dx.doi.org/10.1103/physrevlett.82.616.

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7

Samanta, Kartik, and Evgeny Y. Tsymbal. "Symmetry-controlled SrRuO₃/SrTiO₃/SrRuO₃ magnetic tunnel junctions: spin polarization and its relevance to tunneling magnetoresistance." Journal of Physics: Condensed Matter 36, no. 49 (2024): 495802. http://dx.doi.org/10.1088/1361-648x/ad765f.

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Abstract Magnetic tunnel junctions (MTJs), that consist of two ferromagnetic electrodes separated by an insulating barrier layer, have non-trivial fundamental properties associated with spin-dependent tunneling. Especially interesting are fully crystalline MTJs where spin-dependent tunneling is controlled by the symmetry group of wave vector. In this work, using first-principles quantum-transport calculations, we explore spin-dependent tunneling in fully crystalline SrRuO3/SrTiO3/SrRuO3 (001) MTJs and predict tunneling magnetoresistance (TMR) of nearly 3000%. We demonstrate that this giant TMR

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8

Dempsey, K. J., A. T. Hindmarch, C. H. Marrows, et al. "Spin-dependent tunneling through NiFe nanoparticles." Journal of Applied Physics 105, no. 7 (2009): 07C923. http://dx.doi.org/10.1063/1.3072721.

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9

Davis, A. H., and J. M. MacLaren. "Spin dependent tunneling at finite bias." Journal of Applied Physics 87, no. 9 (2000): 5224–26. http://dx.doi.org/10.1063/1.373302.

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10

Schelp, L. F., A. Fert, F. Fettar, et al. "Spin-dependent tunneling with Coulomb blockade." Physical Review B 56, no. 10 (1997): R5747—R5750. http://dx.doi.org/10.1103/physrevb.56.r5747.

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11

TSYMBAL, E., K. BELASHCHENKO, J. VELEV, et al. "Interface effects in spin-dependent tunneling." Progress in Materials Science 52, no. 2-3 (2007): 401–20. http://dx.doi.org/10.1016/j.pmatsci.2006.10.009.

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12

Parkin, Stuart. "Spin-Polarized Current in Spin Valves and Magnetic Tunnel Junctions." MRS Bulletin 31, no. 5 (2006): 389–94. http://dx.doi.org/10.1557/mrs2006.99.

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AbstractSpin-polarized currents can be generated by spin-dependent diffusive scattering in magnetic thin-film structures or by spin-dependent tunneling across ultrathin dielectrics sandwiched between magnetic electrodes.By manipulating the magnetic moments of the magnetic components of these spintronic materials, their resistance can be significantly changed, allowing the development of highly sensitive magnetic-field detectors or advanced magnetic memory storage elements.Whereas the magneto-resistance of useful devices based on spin-dependent diffusive scattering has hardly changed since its

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13

Khomitsky D. V. and Zaprudnov N. A. "Spin-dependent tunneling in a double quantum dot in the "slow" evolution regime." Semiconductors 56, no. 10 (2022): 748. http://dx.doi.org/10.21883/sc.2022.10.55025.9875.

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The tunneling and spin dynamics is studied for the hole states in a GaAs-based double quantum dot in the presence of strong spin-orbit coupling and periodic electric field. The regimes of tunneling with the spin flip are considered for the &quot;slow&quot; evolution when the field frequency is lower than the other energy parameters of the stationary part of the Hamiltonian. It is found that the under such conditions the spin flip tunneling may take place at both resonant and non-resonant regimes with respect to the Zeeman level splitting. In the latter case the driving frequency may be

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14

Zhang, Ai-fang, Zi-hua Xin, Hong-yan Song, Liu-po Wu, and Yao-ming Shi. "Spin-dependent tunneling through a spin precession quantum dot." Journal of Shanghai University (English Edition) 12, no. 1 (2008): 39–42. http://dx.doi.org/10.1007/s11741-008-0108-2.

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15

GETZLAFF, M., M. BODE, and R. WIESENDANGER. "SPIN-POLARIZED VACUUM TUNNELING: CORRELATION OF ELECTRONIC AND MAGNETIC PROPERTIES ON THE NANOMETER SCALE." Surface Review and Letters 06, no. 05 (1999): 591–97. http://dx.doi.org/10.1142/s0218625x99000548.

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The realization of spin-polarized vacuum tunneling is demonstrated for the Gd(0001) surface, which is ideally suited since it exhibits a surface state that is exchange-split into two parts with opposite spin polarization. Both appear as distinct features in the tunneling spectra. The use of ferromagnetic probe tips leads to magnetic-field-dependent asymmetries in the differential tunneling conductivity at bias voltages which correspond to the energies of the spin components. By mapping the asymmetry parameter we can image the magnetic domain structure of the sample. The spin polarization of th

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16

Demchenko, D. O., A. N. Chantis, and A. G. Petukhov. "SPIN FILTERING IN MAGNETIC HETEROSTRUCTURES." International Journal of Modern Physics B 15, no. 24n25 (2001): 3247–52. http://dx.doi.org/10.1142/s0217979201007579.

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Several techniques were proposed to achieve solid state spin filtering such as magnetic tunnel junctions comprised of half-metallic compounds or solid state Stern-Gerlach apparatus. Another alternative consists in using spin-dependent resonant tunneling through magnetically active quantum wells. Recent advances in molecular beam epitaxial growth made it possible to fabricate exotic heterostructures comprised of magnetic films or buried layers (ErAs, GaxMn1-xAs) integrated with conventional semiconductors (GaAs) and to explore quantum transport in these heterostructures. It is particularly inte

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17

Silva, Erasmo A. de Andrada e., and Giuseppe C. La Rocca. "Spin-dependent resonant tunneling in semiconductor nanostructures." Brazilian Journal of Physics 29, no. 4 (1999): 719–22. http://dx.doi.org/10.1590/s0103-97331999000400020.

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18

Platt, C. L., B. Dieny, and A. E. Berkowitz. "Spin‐dependent tunneling in HfO2 tunnel junctions." Applied Physics Letters 69, no. 15 (1996): 2291–93. http://dx.doi.org/10.1063/1.117537.

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19

Wang, S., F. J. Yue, J. Shi, et al. "Room-temperature spin-dependent tunneling through molecules." Applied Physics Letters 98, no. 17 (2011): 172501. http://dx.doi.org/10.1063/1.3583585.

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20

Inomata, K., and Y. Saito. "Spin-dependent tunneling through layered ferromagnetic nanoparticles." Applied Physics Letters 73, no. 8 (1998): 1143–45. http://dx.doi.org/10.1063/1.122110.

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21

Sattari, Farhad, and Soghra Mirershadi. "Spin-dependent tunneling time in strained graphene." Superlattices and Microstructures 100 (December 2016): 1103–11. http://dx.doi.org/10.1016/j.spmi.2016.10.078.

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22

Beech, R. S., J. Anderson, J. Daughton, B. A. Everitt, and Dexin Wang. "Spin dependent tunneling devices fabricated using photolithography." IEEE Transactions on Magnetics 32, no. 5 (1996): 4713–15. http://dx.doi.org/10.1109/20.539127.

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23

Garcia, V., M. Bibes, J. L. Maurice, et al. "Spin-dependent tunneling through high-k LaAlO3." Applied Physics Letters 87, no. 21 (2005): 212501. http://dx.doi.org/10.1063/1.2132526.

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24

Granovsky, A. B. "Microwave-Frequency Spin-Dependent Tunneling in Nanocomposites." Physics of the Solid State 47, no. 4 (2005): 738. http://dx.doi.org/10.1134/1.1913990.

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25

Nowak, J., and J. Raułuszkiewicz. "Spin dependent electron tunneling between ferromagnetic films." Journal of Magnetism and Magnetic Materials 109, no. 1 (1992): 79–90. http://dx.doi.org/10.1016/0304-8853(92)91034-q.

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26

LI, CHUN-LEI, XIAO-MING WANG, and PENG ZHANG. "PROPERTIES OF RESONANCE TRANSMISSION THROUGH A SEMICONDUCTOR DOUBLE-WELL STRUCTURE WITH SPIN-ORBIT COUPLING." International Journal of Modern Physics B 25, no. 04 (2011): 561–71. http://dx.doi.org/10.1142/s0217979211058109.

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In this paper, we investigate effects of the Dresselhaus spin-orbit coupling, inter-well coupling, and external bias on the dynamics of resonance tunneling through a semiconductor double-well structure. Based on the transfer matrix technique and the single band effective-mass approximation method, the numerical results demonstrate that the transmission peaks of the spin-up and spin-down electrons split due to the Dresselhaus spin-orbit coupling in the double-well structure. As the in-plane wave vector and external electric field increase, the split becomes farther apart. There is a prominent d

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27

WANG, Y., A. P. LIU, J. BAO, X. G. XU, and Y. JIANG. "SPIN INJECTION INTO TWO-DIMENSIONAL ELECTRON GAS THROUGH A SPIN-FILTERING INJECTOR." Modern Physics Letters B 22, no. 16 (2008): 1535–45. http://dx.doi.org/10.1142/s0217984908016273.

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In this paper, large spin polarization and magnetoconductance in a ferromagnet (FM)/ferromagnetic insulator (FI)/two-dimensional electron gas (2DEG)/non-magnetic insulator (I)/FM hybrid structure are theoretically predicted by introducing a spin-filtering injector. In the framework of coherent tunneling model, the electron transmission probability, spin polarization and magnetoconductance in the hybrid structure all oscillate with the electron density within the 2DEG channel. A complete single-mode spin injection would be realized by designing a well-defined geometry to adjust the competition

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28

Sin, K., M. Mao, C. Chien, et al. "Low resistance spin-dependent tunneling junctions with naturally oxidized tunneling barrier." IEEE Transactions on Magnetics 36, no. 5 (2000): 2818–20. http://dx.doi.org/10.1109/20.908599.

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29

TAGANI, M. BAGHERI, and H. RAHIMPOUR SOLEIMANI. "SPIN-DEPENDENT BEATS CREATED BY IRRADIATION OF MICROWAVE FIELD THROUGH A QUANTUM DOT." Modern Physics Letters B 25, no. 25 (2011): 2033–39. http://dx.doi.org/10.1142/s0217984911027224.

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We study spin-dependent transport through a quantum dot with Zeeman split levels coupled to ferromagnetic leads and under influence of microwave irradiation. Current polarization, spin current, spin accumulation and tunneling magnetoresistance are analyzed using nonequilibrium Green's function formalism and rate equations. Spin-dependent beats in spin resolved currents are observed. The effects of magnetic field, temperature and Coulomb interaction on these beats are studied.

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30

Hervé, Marie, Moritz Peter, Timofey Balashov, and Wulf Wulfhekel. "Towards Laterally Resolved Ferromagnetic Resonance with Spin-Polarized Scanning Tunneling Microscopy." Nanomaterials 9, no. 6 (2019): 827. http://dx.doi.org/10.3390/nano9060827.

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We used a homodyne detection to investigate the gyration of magnetic vortex cores in Fe islands on W(110) with spin-polarized scanning tunneling microscopy at liquid helium temperatures. The technique aims at local detection of the spin precession as a function of frequency using a radio-frequency (rf) modulation of the tunneling bias voltage. The gyration was excited by the resulting spin-polarized rf current in the tunneling junction. A theoretical analysis of different contributions to the frequency-dependent signals expected in this technique is given. These include, besides the ferromagne

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31

Scheike, Thomas, Hiroaki Sukegawa, and Seiji Mitani. "Li-substituted MgAl2O4barriers for spin-dependent coherent tunneling." Japanese Journal of Applied Physics 55, no. 11 (2016): 110310. http://dx.doi.org/10.7567/jjap.55.110310.

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32

Lukaszew, R. A., Y. Sheng, C. Uher, and R. Clarke. "Use of magnetocrystalline anisotropy in spin-dependent tunneling." Applied Physics Letters 75, no. 13 (1999): 1941–43. http://dx.doi.org/10.1063/1.124878.

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33

Voskoboynikov, A., Shiue Shin Liu, and C. P. Lee. "Spin-dependent electronic tunneling at zero magnetic field." Physical Review B 58, no. 23 (1998): 15397–400. http://dx.doi.org/10.1103/physrevb.58.15397.

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34

Voskoboynikov, A., Shiue Shin Liu, and C. P. Lee. "Spin-dependent tunneling in double-barrier semiconductor heterostructures." Physical Review B 59, no. 19 (1999): 12514–20. http://dx.doi.org/10.1103/physrevb.59.12514.

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35

Vutukuri, S., M. Chshiev, and W. H. Butler. "Spin-dependent tunneling in FM∣semiconductor∣FM structures." Journal of Applied Physics 99, no. 8 (2006): 08K302. http://dx.doi.org/10.1063/1.2151805.

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36

Mitani, S., H. Fujimori, and S. Ohnuma. "Spin-dependent tunneling phenomena in insulating granular systems." Journal of Magnetism and Magnetic Materials 165, no. 1-3 (1997): 141–48. http://dx.doi.org/10.1016/s0304-8853(96)00490-8.

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37

Michaeli, Karen, and Ron Naaman. "Origin of Spin-Dependent Tunneling Through Chiral Molecules." Journal of Physical Chemistry C 123, no. 27 (2019): 17043–48. http://dx.doi.org/10.1021/acs.jpcc.9b05020.

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38

Saffarzadeh, A., M. Bahar, and M. Banihasan. "Spin-dependent resonant tunneling in ZnSe/ZnMnSe heterostructures." Physica E: Low-dimensional Systems and Nanostructures 27, no. 4 (2005): 462–68. http://dx.doi.org/10.1016/j.physe.2005.01.015.

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39

Petroff, F., L. F. Schelp, S. F. Lee, et al. "Spin-dependent tunneling in granular magnetic tunnel junctions." Journal of Magnetism and Magnetic Materials 175, no. 1-2 (1997): 33. http://dx.doi.org/10.1016/s0304-8853(97)00585-4.

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40

Dieny, B., S. Sankar, M. R. McCartney, D. J. Smith, P. Bayle-Guillemaud, and A. E. Berkowitz. "Spin-dependent tunneling in discontinuous metal/insulator multilayers." Journal of Magnetism and Magnetic Materials 185, no. 3 (1998): 283–92. http://dx.doi.org/10.1016/s0304-8853(98)00028-6.

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41

Takahashi, S., and S. Maekawa. "Enhancement in spin-dependent tunneling with Coulomb blockade." Journal of Magnetism and Magnetic Materials 198-199 (June 1999): 143–45. http://dx.doi.org/10.1016/s0304-8853(98)01006-3.

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42

Ryan, J. T., P. M. Lenahan, A. T. Krishnan, and S. Krishnan. "Spin dependent tunneling spectroscopy in 1.2 nm dielectrics." Journal of Applied Physics 108, no. 6 (2010): 064511. http://dx.doi.org/10.1063/1.3482071.

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43

Wang, D., J. M. Daughton, Zhenghong Qian, M. Tondra, and C. Nordman. "Spin-dependent tunneling junctions with superparamagnetic sensing layers." IEEE Transactions on Magnetics 39, no. 5 (2003): 2812–14. http://dx.doi.org/10.1109/tmag.2003.815720.

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44

Wang, Dexin, James M. Daughton, Zhenghong Qian, Cathy Nordman, Mark Tondra, and Art Pohm. "Spin dependent tunneling junctions with reduced Neel coupling." Journal of Applied Physics 93, no. 10 (2003): 8558–60. http://dx.doi.org/10.1063/1.1556982.

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45

Gider, S. "The Magnetic Stability of Spin-Dependent Tunneling Devices." Science 281, no. 5378 (1998): 797–99. http://dx.doi.org/10.1126/science.281.5378.797.

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46

Fang, Z. L., P. Wu, N. Kundtz, A. M. Chang, X. Y. Liu та J. K. Furdyna. "Spin-dependent resonant tunneling through 6μm diameter double barrier resonant tunneling diode". Applied Physics Letters 91, № 2 (2007): 022101. http://dx.doi.org/10.1063/1.2751132.

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47

Isić, Goran, Jelena Radovanović, and Vitomir Milanović. "Anisotropic spin-dependent electron tunneling in a triple-barrier resonant tunneling diode." Journal of Applied Physics 102, no. 12 (2007): 123704. http://dx.doi.org/10.1063/1.2825401.

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48

Niyazov, R. A., D. N. Aristov, and V. Yu Kachorovskii. "Spin-dependent transport through helical Aharonov-Bohm interferometer." Journal of Physics: Conference Series 2086, no. 1 (2021): 012198. http://dx.doi.org/10.1088/1742-6596/2086/1/012198.

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Abstract We discuss spin-dependent transport via tunneling Aharonov-Bohm interferometer formed by helical edge states tunnel-coupled to helical leads. We focus on the experimentally relevant high-temperature case as compared to the level spacing and obtain the full 4×4 matrix of transmission coefficients in the presence of magnetic impurities. We show that spin conserving and spin-flip transmission coefficients of the setup can be effectively tuned by the magnetic flux. These features are attractive due to possible applications for spintronics, magnetic field detection, and quantum computing.

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49

Khajetoorians, Alexander Ako, Benjamin Baxevanis, Christoph Hübner, et al. "Current-Driven Spin Dynamics of Artificially Constructed Quantum Magnets." Science 339, no. 6115 (2013): 55–59. http://dx.doi.org/10.1126/science.1228519.

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The future of nanoscale spin-based technologies hinges on a fundamental understanding and dynamic control of atomic-scale magnets. The role of the substrate conduction electrons on the dynamics of supported atomic magnets is still a question of interest lacking experimental insight. We characterized the temperature-dependent dynamical response of artificially constructed magnets, composed of a few exchange-coupled atomic spins adsorbed on a metallic substrate, to spin-polarized currents driven and read out by a magnetic scanning tunneling microscope tip. The dynamics, reflected by two-state sp

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50

Xu, Chunlong, Zhen Wang, Lei Wang, Gang Shi, Zhaoyang Hou, and Li Xi. "Bias voltage-dependent low field spin transport properties of Fe3O4–PEG with different particle sizes." Modern Physics Letters B 30, no. 23 (2016): 1650301. http://dx.doi.org/10.1142/s0217984916503012.

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Spin-dependent transport properties of Fe3O4 spheres with diameters from 200 nm to 900 nm have been investigated and polyethylene glycol (PEG) exists on the surface of Fe3O4 particles. The nonlinear I–V curve became obvious with the increase of Fe3O4 diameter, which indicated the tunneling barrier height decreases with the increasing diameter. The magnetoresistance (MR) can reach −13% with an applied low field of 0.2 T at room temperature. With the diameter increase, the MR decreases and the required applied field increases. Moreover, the decrease of MR with the bias voltage increase can be at

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