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Dissertations / Theses on the topic 'Sputtering thin films'

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Published: 3 June 2025
Last updated: 31 July 2025

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1

Niu, Feng. "Functional nanocomposite thin-films by co-sputtering." Thesis, University of Oxford, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.390504.

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2

Han, Sanggil. "Cu2O thin films for p-type metal oxide thin film transistors." Thesis, University of Cambridge, 2018. https://www.repository.cam.ac.uk/handle/1810/285099.

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The rapid progress of n-type metal oxide thin film transistors (TFTs) has motivated research on p-type metal oxide TFTs in order to realise metal oxide-based CMOS circuits which enable low power consumption large-area electronics. Cuprous oxide (Cu2O) has previously been proposed as a suitable active layer for p-type metal oxide TFTs. The two most significant challenges for achieving good quality Cu2O TFTs are to overcome the low field-effect mobility and an unacceptably high off-state current that are a feature of devices that have been reported to date. This dissertation focuses on improving
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3

Strauß, Florian, Janek Binzen, Erwin Hüger, Paul Heitjans, and Harald Schmidt. "Thin LixSi Films Produced by Ion Beam Sputtering." Diffusion fundamentals 21 (2014) 11, S.1, 2014. https://ul.qucosa.de/id/qucosa%3A32405.

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4

Lin, Keng-Yu. "Thin films for thermoeletric applications." Thesis, Linköpings universitet, Tunnfilmsfysik, 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-109106.

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Global warming and developments of alternative energy technologies have become important issues nowadays. Subsequently, the concept of energy harvesting is rising because of its ability of transferring waste energy into usable energy. Thermoelectric devices play a role in this field since there is tremendous waste heat existing in our lives, such as heat from engines, generators, stoves, computers, etc. Thermoelectric devices can extract the waste heat and turn them into electricity. Moreover, the reverse thermoelectric phenomenon has the function of cooling which can be applied to refrigerato
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5

Trinh, David Huy. "Nanocrystalline Alumina-Zirconia Thin Films Grown by Magnetron Sputtering." Doctoral thesis, Linköping : Department of Physics, Chemistry and Biology, Linköpings universitet, 2008. http://www.bibl.liu.se/liupubl/disp/disp2008/tek1153s.pdf.

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6

Shi, Xu. "Some properties of ultra thin metal films and multilayers." Thesis, University of Reading, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.279681.

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7

Bellingham, James Robert. "Studies of amorphous oxide films prepared by ion beam sputtering." Thesis, University of Cambridge, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.316684.

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8

Book, Martin. "Magnetron sputtering of highly transparent p-conductive NiO thin films." Thesis, Uppsala universitet, Solcellsteknik, 2020. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-423322.

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P-type transparent conductors are needed for a wide range of applicationssuch as solar cells and electrochromic smart windows. Solar power is animportant form of energy in today’s society as the threat of global warmingpushes the world towards fossil free energy. Hence a lot of solar cell typeshave been developed, among them tandem cells which are to different typesof solar cells stacked on top of each other. If one of the cells is based ona perovskite, a transparent p-type thin film electrode is needed as a holeconductor and electron blocking layer between the two cells. Nickel oxide(NiO) is
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9

Lorenzzi, Jean Carlos da Conceição. "Boron nitride thin films deposited by magnetron sputtering on Si3N4." Master's thesis, Universidade de Aveiro, 2007. http://hdl.handle.net/10773/2307.

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Mestrado em Ciência e Engenharia de Materiais<br>O Nitreto de boro é um material polimorfo, sendo as fases hexagonal (h-BN) ecúbicas (c-BN) as predominantes. A fase hexagonal do nitreto de boro apresenta uma estrutura em camadas sp2, semelhante a grafite, enquanto que a fase cúbica do nitreto de boro tem forte ligações sp3, como o diamante. O h- BN apresenta boas propriedades dieléctricas, é um material refractário, resistente a corrosão, é conhecido por ser um lubrificante sólido que tem aplicações na protecção de moldes de injecção e em outros processos mecânicos de elevadas temperaturas ou
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10

Jones, Timothy Russell. "Manufacturing Gallium Doped ZnO Thin Films Suitable for Use in Thin Film Transistors Using Unbalanced Magnetron Sputtering." OpenSIUC, 2013. https://opensiuc.lib.siu.edu/theses/1117.

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Gallium doped zinc oxide (GZO) thin films were deposited onto Si (100) substrates. Depositions were performed at relatively low temperatures suitable for use in manufacturing thin films on plastic substrates. Substrates were thermally oxidized, and then thin films were deposited via radio frequency (RF) unbalanced magnetron sputtering. ZnO thin films were also sputtered in order to act as a seed layer for growing nanostructures by the hydrothermal method. Sputtering parameters evaluated independently include pressure, gas composition, power, temperature and the presence of an external magnetic
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11

Ng, Kit Ling. "Current transport mechanism of hafnium oxide films prepared by direct sputtering /." View Abstract or Full-Text, 2003. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202003%20NGK.

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12

Raza, Mohsin. "Synthesis of hydrogenated amorphous carbon (a-C:H) thin films by HiPIMS-based processes." Thesis, Linköpings universitet, Plasma och beläggningsfysik, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-84320.

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This thesis explores the feasibility of high power impulse magnetron sputtering (HiPIMS) to synthesize hydrogenated amorphous carbon (a-C:H) thin films in Ar-hydrocarbon ambient and the relationship between process parameters, gas phase composition and film properties. To this purpose a stable process based on HiPIMS and direct current magnetron sputtering (DCMS) has been developed. Four series of amorphous carbon thin films were deposited by hybrid HiPIMS-DCMS and pure DCMS processes at 15 mTorr pressure using different Ar-acetylene compositions and a substrate bias from 0 to -350 V. The effe
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13

Magnfält, Daniel. "Alternative method for deposition of alumina thin films." Thesis, Linköpings universitet, Institutionen för fysik, kemi och biologi, 2009. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-16706.

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Deposition of alumina thin films in the presence of fluorine as a method for reducing thehydrogen incorporation in the films was investigated in this thesis. Hydrogen incorporated in alumina thin films have been shown to cause a lower density and refractive index in amorphous films, assist electrical conduction through thin amorphous films as well as inhibiting the formation of the thermally stable α-phase. The depositions were made in a ultra high vacuum system where high vacuum conditions were simulated by leaking water vapor into the system. No substrate heating or substratebias was applied
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14

Yeadon, Andrew D. "Developing a remote plasma sputtering process for the in-line reactive sputtering of ceramic thin films." Thesis, University of Surrey, 2013. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.599918.

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High target utilisation sputtering (HiTUS) is a patented remote plasma sputtering technique for the deposition of thin films. A prototype in-line sputter deposition facility, based on the existing standard HiTUS technology, has been developed. Materials deposited by both the standard HiTUS and the prototype in-line system where characterised. This was important in examining the key deliverable of the new system which is uniform deposition of high quality coatings on large (20 cm by 30 cm) substrates. Initially characterisation of the in-line system showed that fully reacted transparent alumina
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15

Gou, Zhenhui. "Aluminium oxynitride thin films by reactive magnetron sputtering and their applications." Thesis, University of the West of Scotland, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.311793.

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16

Reed, Amber Nicole. "Characterization of Inert Gas RF Plasma-Treated Indium Tin Oxide Thin Films Deposited Via Pulsed DC Magnetron Sputtering." Wright State University / OhioLINK, 2008. http://rave.ohiolink.edu/etdc/view?acc_num=wright1221763086.

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17

Cantelli, Valentina. "Growth, structure and magnetic properties of magnetron sputtered FePt thin films." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-27631.

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The L10 FePt phase belongs to the most promising hard ferromagnetic materials for high density recording media. The main challenges for thin FePt films are: (i) to lower the process temperature for the transition from the soft magnetic A1 to the hard magnetic L10 phase, (ii) to realize c-axes preferential oriented layers independently from the substrate nature and (iii) to control layer morphology supporting the formation of FePt - L10 self-organized isolated nanoislands towards an increase of the signal-to-noise ratio. In this study, dc magnetron sputtered FePt thin films on amorphous substr
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18

Gignac, Lynne Marie. "Processing and characterization of RF sputtered alumina thin films." Diss., The University of Arizona, 1988. http://hdl.handle.net/10150/184611.

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Thin films of alumina were deposited on ferrite (NiₓZn₍₁₋ₓ₎Fe₂O₄), glass, single crystal silicon and graphite substrates by RF sputtering. Though standard, amorphous Al₂O₃ films are readily soluble in hot phosphoric acid, these sputtered films exhibited only reluctant etchability by the acid. Experiments were initially performed to understand the parameters in the sputtering process which were influential in the formation of unetchable films. The results showed that a high concentration of water vapor or oxygen molecules in the sputtering chamber during deposition was the most significant vari
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19

Turner, Graham Mark. "A study of sputtered atoms in a magnetron discharge." Thesis, The University of Sydney, 1990. https://hdl.handle.net/2123/26318.

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Sputter deposition is an important technology, which is widely used in the production of thin films and coatings for the manufacture of microelectronic components, the fabrication of solar selective surfaces and other optical thin films, and the production of decorative coatings. This technology is diverse in terms of the means by which deposition is performed, and the characteristics of the deposit (Bunshah 82]. Sputtering is a vacuum process in which atoms of an electrode material are ejected (i.e., sputtered) from the surface of the electrode by ion or neutral atom impact. In most sputte
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20

Todi, Ravi. "INVESTIGATIONS ON RF SPUTTER DEPOSITED SICN THIN FILMS FOR MEMS APPLICATIONS." Master's thesis, University of Central Florida, 2005. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/3330.

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With the rapid increase in miniaturization of mechanical components, the need for a hard, protective coatings is of great importance. In this study we investigate some of the mechanical, chemical and physical properties of the SiCN thin films. Thin films of amorphous silicon carbide nitride (a-SiCxNy) were deposited in a RF magnetron sputtering system using a powder pressed SiC target. Films with various compositions were deposited on to silicon substrate by changing the N2/Ar gas ratios during sputtering. Nano-indentation studies were performed to investigate the mechanical properties such as
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21

Depaz, Michael. "Processing and characterization of zinc oxide thin films." [Tampa, Fla.] : University of South Florida, 2007. http://purl.fcla.edu/usf/dc/et/SFE0002235.

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22

Liljeholm, Lina. "Reactive Sputter Deposition of Functional Thin Films." Doctoral thesis, Uppsala universitet, Fasta tillståndets elektronik, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-175666.

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Thin film technology is of great significance for a variety of products, such as electronics, anti-reflective or hard coatings, sensors, solar cells, etc. This thesis concerns the synthesis of thin functional films, reactive magnetron sputter deposition process as such and the physical and functional characterization of the thin films synthesized. Characteristic for reactive sputtering processes is the hysteresis due to the target poisoning. One particular finding in this work is the elimination of the hysteresis by means of a mixed nitrogen/oxygen processing environment for dual sputtering of
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23

Isukapati, Sundar Babu. "Gallium Oxide Thin Films for Optoelectronic Applications." Youngstown State University / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=ysu1527125539086742.

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24

Boman, Daniel. "Compositional gradients in sputtered thin CIGS photovoltaic films." Thesis, Uppsala universitet, Fasta tillståndets elektronik, 2018. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-355462.

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Cu(In,Ga)Se2 (CIGS) is a semiconductor material and the basis of the promising thin-film photovoltaic technology with the same name. The CIGS film has a typical thickness of 1-2 mm, and solar cells based on CIGS technology has recently reached efficiencies of 23.3%. Ultra-thin CIGS solar cells use sub-micrometer thick films that require significantly less material and can be manufactured in a shorter amount oftime than films with typical thicknesses. With decreasing thickness, both electrical and optical losses get more significant and lower the overall performance. Electrical losses can be de
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25

Guimarães, Monica Costa Rodrigues. "Deposição e caracterização de filmes finos de CrN depositados por diferentes processos de magnetron sputtering." Universidade de São Paulo, 2017. http://www.teses.usp.br/teses/disponiveis/18/18158/tde-17112017-104317/.

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O PVD (Physical Vapor Deposition- Deposição física na fase de vapor) é um meio utilizado para a produção de recobrimentos e empregado em grande escala industrial. É um processo de deposição atômica no qual o material é vaporizado de alvo sólido por sputtering e posteriormente condensado sobre a peça a ser revestida na forma de filme. O processo ocorre em uma câmara de vácuo, na presença de plasma, e por diferença de potencial os íons, na forma pura ou combinados com átomos de hidrogênio ou carbono, são movidos para a superfície do substrato. Uma técnica relativamente nova de sputtering é o HiP
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26

Giridhar, Jayaramachandran. "Preparation and characterization of Mo/Al layered thin films." Thesis, Virginia Tech, 1987. http://hdl.handle.net/10919/40953.

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<p>The fabrication of bilayer and multilayer Mo/Al thin films using a conventional multi-target rf-diode sputter deposition system was studied. The films were deposited on glass and Si( 100) substrates. The as-deposited films were charactexized with respect to their structure and composition profiles using X-Ray diifraction, AES, SEM, TEM, and RBS techniques. The as-deposited bilayer films were of good quality with an interface thickness of about 200 à . They were annealed at different temperatures in the range of 300-600°C for different times. Diffusional intermixing and phase changes were m
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Chen, Wei-Jung, and 陳維容. "Al2O3 — Y2O3 Thin Films Prepared by Magnetron Sputtering." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/64711814950936420179.

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碩士<br>國立東華大學<br>材料科學與工程學系<br>92<br>Magnetron-sputtered aluminum oxide (Al2O3), yttrium oxide (Y2O3), and mixed oxides with different Y2O3/ Al2O3 ratios have been prepared on silicon and Pt-electrode wafers for the purpose of dielectric applications. The sputtering targets are prepared by hot pressing the constituted powders at 1400-1450oC. The effects of deposition temperature for each target on the growth rate, surface morphology, and electrical properties are evaluated. The experimental results indicated Al2O3 and mixed-oxide films were amorphous, but Y2O3 films became crystalline. For
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Chen, S. H., and 陳士弘. "Studies of CdMnS Thin Films Prepared by R.F. Sputtering." Thesis, 1995. http://ndltd.ncl.edu.tw/handle/49355846189837657844.

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碩士<br>國立交通大學<br>電子物理學系<br>83<br>Cd/sub 1-x/ Mn/sub x/ S thin films were prepared by R.F. sputtering with dual guns.By measuring of X-ray diffract- ion, EDAX, and SEM; we found that the lattice parameter and grain size decreased with increasing x, and the surface morphology of deposited films were smoooth and uniform.We determined the energy gap energy of the Cd/sub 1-x/ Mn/sub x/ S thin films by absorption spectra. The energy gap varied with x revealed the similar tendency reported by M. I
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Zhu, Cong Ming, and 朱聰明. "Preparation of PZT thin films by magnetron RF sputtering." Thesis, 1995. http://ndltd.ncl.edu.tw/handle/84634416191423156040.

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Lin, Yan-Fu, and 林彥甫. "Characteristic of GZO thin films by DC magnetron sputtering." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/d9tpn6.

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碩士<br>國立臺北科技大學<br>工程科技研究所<br>102<br>Gallium-doped zinc oxide (GZO) thin film was deposited on glass substrates using the direct-current (DC) magnetron sputtering system with a GZO ceramic target .(The Ga2O3 contents are approximately 0.6 wt.%).The optical and electrical properties of GZO thin films with different deposition parameters ,including sputtering power, working pressure and substrate temperature were investigated .The material characterization includes film thickness using a-step, surface morphology using SEM ,electrical resistance using a Hall-effect method, optical property using U
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Hsiu-Min, Lin, and 林修民. "Prepare CuIn1-xGaxSe2 thin films by sputtering and electroplating." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/62287040998242024906.

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碩士<br>國防大學理工學院<br>材料科學碩士班<br>97<br>Two different methods, sputtering and electroplating, were used to prepare CuIn1-xGaxSe2 thin films, which act as the main absorber layer of copper-indium-gallium-diselenide (CIGS) thin film solar cells, in this thesis. The surface morphology, constituents composition, crystallinity, and electrical properties of these CIGS thin films were analyzed. For the sputtering process, we focus on the preparation of sputtering targets made of the ternary compound alloy, copper-indium-gallium (Cu-In-Ga, CIG). The manufacturing process used vacuum arc melting (VAM) to ma
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Yeh, Tung-Sheng, and 葉東昇. "Growth and characterization of reactive-sputtering AlInN thin films." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/72836543936009190831.

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博士<br>國立清華大學<br>材料科學工程學系<br>97<br>In recent years, III-N materials such as AlN, GaN, InN and their ternary compounds have attracted great interest in applications such as light-emitting diodes, laser diodes, and solar cells etc. AlxIn1-xN (AlInN) compounds are expected to have immense potential in this field of applications because they possess the widest spectral and lattice constant range in all III-N compounds. There were few reports on the growth of AlInN ternary films due to the large miscibility gap and difference in the thermal stability between AlN and InN. In this study, AlInN films
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Lee, Feng-Zhi, and 李縫治. "Deposition of AlN Thin Films by Coherent Magnetron Sputtering." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/65756683394843599385.

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博士<br>國立中山大學<br>機械與機電工程學系研究所<br>93<br>Polycrystalline AlN thin films were reactively deposited onto Al layers on negatively biased glass and Si substrates at temperatures < 80 oC by coherent magnetron sputtering. The target-to-substrate distance is 17 cm. The microstructures and morphology of the films grown at different bias voltages on the substrates were investigated. Typical thickness of the deposited film is 600 nm. The films were amorphous when no bias was applied to the substrates. Diffraction peak of AlN (002) direction was observed at bias voltages of -180 and -210 V. At a bias voltag
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Leou, Jiun-Yueh, and 柳君岳. "studies of ZnMnSe Thin Films prepared by R.F. Sputtering." Thesis, 1996. http://ndltd.ncl.edu.tw/handle/30731606281147225190.

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碩士<br>國立交通大學<br>物理研究所<br>84<br>The ZnMnSe thin films with various Mn concentration were fabricated by using the RF sputtering technique with in-situ post annealing. We have obtained the optimum conditions to grow the ZnMnSe films. The grain size of as-deposited thin films could be varied by increasing the annealing time. We have also found the grain size decreased as the Mn concentration was increased. In addition, the Raman spectra investigation revealed some information to realize tht mod
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Peng, Yu-Jie, and 彭裕傑. "SiO2 thin films deposited by the step sputtering technique." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/nj99n7.

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碩士<br>國立臺灣科技大學<br>機械工程系<br>105<br>In this paper, 100 nm silicon oxide thin films have been deposited on the flexible polyethylene terephthalate (PET) substrate by RF magnetron sputtering, using single-step and two-step sputtering technique. The influence of the surface roughness, surface pattern, adhesion, light transmittance and water vapor permeability of the silicon oxide film under different sputtering power are investigated. Single-step sputtering uses 30W, 40W, 50W sputtering powers to produce 100 nm SiO2 films, respectively; Two-step sputtering, first group, deposits 50 nm SiO2 films wi
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Huang, Chih-Hsiang, and 黃智祥. "Barrier properties of co-sputtering Cu1-xHfx thin films." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/avgazw.

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碩士<br>國立虎尾科技大學<br>光電與材料科技研究所<br>96<br>As device scaled down to deep sub-micron technology, copper has replaced aluminum in the interconnect material due to its superior electrical conductivity and excellent resistance to electromigration. However, Cu atoms easily diffuse into device region and induce a deep level trap. A diffusion barrier is therefore required for preventing the inter-diffusion between copper and silicon. This study investigated the barrier properties of HfNx and the characteristics of Cu1-xHfx alloy films via Cu1-xHfx/HfNx/Si stacked structure. The finding revealed Cu1-xHfx (
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"Strain and memory effects in ultra-thin La0.67Ca0.33MnO3 films." 2003. http://library.cuhk.edu.hk/record=b5891705.

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by Law Siu Wah = 超薄薄膜的應變和記憶效應 / 羅紹華.<br>Thesis (M.Phil.)--Chinese University of Hong Kong, 2003.<br>Includes bibliographical references.<br>Text in English; abstracts in English and Chinese.<br>by Law Siu Wah = Chao bo bo mo de ying bian he ji yi xiao ying / Luo Shaohua.<br>Acknowledgement --- p.i<br>Abstract --- p.ii<br>論文摘要 --- p.iv<br>Table of contents --- p.v<br>List of Figures --- p.viii<br>List of Tables --- p.xii<br>Chapter Chapter 1 --- Introduction<br>Chapter 1.1 --- Magnetoresistance (MR) --- p.1<br>Chapter 1.1.1 --- Colossal magnetoresistance (CMR) in rare-earth manganites --
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Lio, Chai-Jean, and 劉家楨. "Studies of Cd1-xFexS Thin Films Prepared by R.F. Sputtering." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/18675013947217241919.

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碩士<br>國立交通大學<br>電子物理系<br>88<br>The Cd1-xFexS films with various Fe concentration were deposited by radio frequency sputtering ( RF sputtering ) in this thesis. We controlled the deposition conditions: the substrate temperature, the period of in-situ post annealing and the different kind of substrate during the deposition process. The Fe concentration was determined by energy dispersive analysis of X-ray (EDAX) . Crystal structure and lattice constant were analyzed by X-ray diffraction (XRD) . Band structure and optical property were analyzed by photoluminescence (PL) . Surface morphology and g
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Chang, Cheng-Nan, and 張正男. "A Study on The PZT Thin Films Prepared by Sputtering." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/60836679501226146737.

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碩士<br>國立中山大學<br>機械與機電工程學系研究所<br>92<br>Lead zirconate titanate (PZT) thin films have been extensively investigated for many applications, such as MEMS devices (actuators, sensors, transducers, SAW devices) and memory devices (DRAM, NVFRAM). In this study, the sputtering deposition methods were used to fabricate the PZT thin films. Multilayer Si/SiO2/Ti/Pt was used as substrate, in which the thickness of SiO2, Ti and Pt layer was 250, 50 and 150nm. In order to improve the electric and piezoelectric properties of PZT thin films, the few nanometer thick layer of Ti on the platinum have been used f
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Chang, Kung-Hao, and 張恭豪. "Magnetron Sputtering Properties of La0.7Sr0.3MnO3 Thin Films on Ferroelectric Materials." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/68627878469248834284.

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碩士<br>國立臺灣科技大學<br>機械工程系<br>92<br>In this thesis, La0.7Sr0.3MnO3 (LSMO) thin films were deposited as an electrode of ferroelectric Pb1.1Zr0.52Ti0.48O3 (PZT) thin films using magnetron sputtering and sequentially with various post-annealing treatment in order to obtain optimum quality of films. Microstructures, electrical properties of the LSMO thin films were investigated with X-ray diffractometry, scanning electron microscopy, four-point probe resistance tester, ferroelectric testing system (Precision Workstation) and Hall effect measurement. The aim of this study is to investigate the effect
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Shen, Guan-Hung, and 沈冠宏. "AZOY transparent conducting thin films prepared by RF magnetron sputtering." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/34m7a8.

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碩士<br>國立高雄大學<br>化學工程及材料工程學系碩士班<br>97<br>As the development of photoelectricity industry, new materials are invented continuously. The researches of “transparent conducting oxide” have played an important role because the two characteristics of transparent conducting thin films, transparency and conductivity, can be widely applied for the industry of semiconductor and photoelectricity such as LCD, solar cells, and transparent touch panel etc. This research utilizes RF magnetron sputtering system to deposit AZOY thin films on the glass substrate. During the sputtering process, the distance betw
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Wang, Sheng-Wun, and 王聖文. "The Study of Cu-doped ZnO Thin Films by Sputtering." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/j8f638.

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碩士<br>國立臺北科技大學<br>光電工程系研究所<br>100<br>In this study, Cu-doped Zinc Oxide (CZO) films on the Sapphire were prepared by RF magnetron sputtering system. We measured the crystal structure and electronic properties of the thin films by X-ray diffraction and Hall Effect measurement. The processing parameters were optimized according to the crystalline guality of as-sintered undoped ZnO films. We found that ZnO films had good crystallinity on the c-axis orientation at substrate temperature of 600℃,working pressure of 10mTorr, sputtering power of 40W, and deposition time of 45 minutes. (002)-peak shift
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Lin, Chu-Jian, and 林楚健. "Investigation of Gallium Arsenide Thin Films deposited by RF Sputtering." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/48n87a.

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碩士<br>國立中央大學<br>光電科學與工程學系<br>104<br>In this study the Gallium Arsenide thin films deposited on the Germanium wafer by using sputtering method was discussed. The advantage of sputtering method was its lower costs and nontoxic process. Firstly, the properties of the Gallium Arsenide films were analyzed with varied RF power and the substrate temperature processed .Then , the annealing were developed to optimize the Gallium Arsenide film quality . XRD , Raman , AFM and TEM to analyze the results of grown the Gallium Arsenide thin films to achieve a good crystallize GaAs film .
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Chang, Ya-Chen, and 張雅甄. "Fabrication of Photohydrophilic TiO2 Thin Films by Pulsed Magnetron Sputtering." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/76779935050139203966.

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Shing, Liang Jiann, and 梁建興. "Reactive sputtering of RuO2 thin films and their electrical y." Thesis, 1993. http://ndltd.ncl.edu.tw/handle/62291928399300190417.

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碩士<br>國立臺灣科技大學<br>工程技術研究所<br>81<br>Thin films deposited by sputtering is an important method in integrated circuit manufacture process. A reactive RF sputtering system was setup and the ruthenium dioxide thin films with the average grain size about 12-15nm were deposited. The detail processes for preparing RuO2 films were present. In this study we found that the factors correlated to the films resistivity also govern the average grain size of the films. The e
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Kuo, Hsiang-Yin, and 郭湘吟. "Study of the ZnO thin films by DC magnetron sputtering." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/67693349171312325418.

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碩士<br>國立東華大學<br>材料科學與工程學系<br>98<br>We prepared ZnO thin films by arsenic/gallium co-doping using DC magnetron sputtering. The effects of the Ar gas flow, DC power, Ar/O2 gas ratio, and annealing on the structural and optical properties of ZnO films will be investigated. A magnetron is used in order to increase the plasma density near the target, which allows high deposition rates and films density improvement. On the other hand, the utilization of a magnetron sputtering technique leads to spatial non homogeneity. Experimental results indicated that the quality, morphology and XPS analysis have
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Chen, Ying Fang, and 陳盈坊. "Sol-gel and sputtering methods for AZO thin films preparation." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/31094307890771449320.

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碩士<br>長庚大學<br>光電工程研究所<br>96<br>The goal of this study is to use sol-gel method and sputter technique to prepare ZnO：Al (AZO) thin films.The thermal treatment affected the crystallinility of the AZO films,XRD results showed that (002)-oriented polycrystal films are deposited on glass substrates and the crystalline quality can be improved.This study used flexible PET and PES plastic as substrates. ITO thin films were deposited on PES and PET plastic,and they have been prepared by SIV-3040.Their average resistivity on PES is 5.39×101 (Ω/□) and average resistivity on PET is 4.28×101 (Ω/□) . The ra
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Yang, Kuen-jenn, and 楊昆展. "Investigation of Silicon-Nickel thin films deposited by Co-sputtering." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/84013808698300843470.

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碩士<br>國立成功大學<br>微電子工程研究所碩博士班<br>95<br>In this experiment, Silicon and Nickel atoms were deposited on the P-type Silicon substrate using co-sputtering system, and then the sample were annealed in the high temperature furnace. With fixed RF power on the Silicon target and changing the RF power on Nickel target, we made a series of specimens with different percentage of Nickel atoms in the thin film to find out the best condition to fabricate the Nickel silicide film with better electrical properties. Sample deposited in the sputter with different quantity of Nickel atoms in the thin film were
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Lee, Kuo-Hao, and 李國豪. "Characterization of Ru1-xIrxO2 Thin Films Prepared by Reactive Sputtering." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/42143367677379479155.

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碩士<br>國立臺灣科技大學<br>材料科技研究所<br>91<br>Ru1-xIrxO2 thin films have been grown on Si(100) substrate by magnetron reactive sputtering method. A detailed characterization is carried out using X-ray photoelectron spectroscopy(XPS)、X-ray diffraction(XRD)、Raman spectroscopy、field-emission scanning electron microscopy(FESEM) and resistivity . XPS shows the Ru1-xIrxO2 with increasing iridium composition(x) from 0.1 to 0.7 by adjusting sputter power ratio of Ir to Ru targets. The analysis of chemical binding states also indicates the iridium metal residuals with the Ru1-xIrxO2 thin films. XRD reveals the ru
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Lin, Wen-Bin, and 林文彬. "Titanium carbide thin films grown by reactive r.f. magnetron sputtering." Thesis, 1993. http://ndltd.ncl.edu.tw/handle/06076245950028682073.

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碩士<br>國立交通大學<br>電子研究所<br>81<br>The experiments were performed in a diode magnetron r.f. sputtering unit. The deposition rate, composition, diffraction spectra, depth profile, cross section and surface microstructure of the TiC thin films, obtained by sputtering in CH4 pressure range from 0.25 * 10-3 to 0.98 * 10-3 Torr, have been measured. The results of deposition rate and composition measurements show that the amount of reactive constituents incorporated into the growing films depen
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