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Journal articles on the topic 'Stealth Laser Dicing Process'

Author: Grafiati

Published: 3 June 2025

Last updated: 31 July 2025

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1

Dohnke, Karl Otto, Korbinian Kaspar, and Dirk Lewke. "Comparison of Different Novel Chip Separation Methods for 4H-SiC." Materials Science Forum 821-823 (June 2015): 520–23. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.520.

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Mechanical blade dicing is a state-of-the-art technique for the chip separation of SiC devices. Due to the hardness of SiC this technique suffers from low feed rate and high wear of the diamond coated dicing blade, resulting in the risk of uncontrolled tool breakage during the dicing process. With the upcoming transition to 150 mm diameter of SiC wafers this technique will most probably reach its limit. For dicing SiC wafers of those diameters on a productive scale three alternative dicing technologies are considered in this paper: ablation laser dicing, Stealth Dicing and Thermal Laser Separa

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2

Furuno, Kenta, Shigeyuki Yamashita, Yoji Wakayama, Naoya Saiki, and Shinya Takyu. "A Novel Dicing tape for WLCSP Using Stealth Dicing Through Dicing tape and Back Side Protection-Film." International Symposium on Microelectronics 2019, no. 1 (2019): 000333–37. http://dx.doi.org/10.4071/2380-4505-2019.1.000333.

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Abstract Market demand of information terminals for Internet of Things (IoT) is increasing. So market situation requires various semiconductor packages. Wafer Level Chip Size Package (WLCSP) is one of the most important technology among them. We selected stealth dicing (SD) as a manufacturing method for WLCSP because the cutting speed is higher than blade dicing and the yield of semiconductor chip is higher than blade dicing. But, SD process still has some technical issues. In some cases, when the laser is irradiated from circuit side (from surface side of Si wafer), the metal pattern in circu

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3

Gaudiuso, Caterina, Annalisa Volpe, and Antonio Ancona. "One-Step Femtosecond Laser Stealth Dicing of Quartz." Micromachines 11, no. 3 (2020): 327. http://dx.doi.org/10.3390/mi11030327.

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We report on a one-step method for cutting 250-µm-thick quartz plates using highly focused ultrashort laser pulses with a duration of 200 fs and a wavelength of 1030 nm. We show that the repetition rate, the scan speed, the pulse overlap and the pulse energy directly influence the cutting process and quality. Therefore, a suitable choice of these parameters was necessary to get single-pass stealth dicing with neat and flat cut edges. The mechanism behind the stealth dicing process was ascribed to tensile stresses generated by the relaxation of the compressive stresses originated in the laser b

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4

Zhang, Zhe, Zhidong Wen, Haiyan Shi, et al. "Dual Laser Beam Asynchronous Dicing of 4H-SiC Wafer." Micromachines 12, no. 11 (2021): 1331. http://dx.doi.org/10.3390/mi12111331.

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SiC wafers, due to their hardness and brittleness, suffer from a low feed rate and a high failure rate during the dicing process. In this study, a novel dual laser beam asynchronous dicing method (DBAD) is proposed to improve the cutting quality of SiC wafers, where a pulsed laser is firstly used to introduce several layers of micro-cracks inside the wafer, along the designed dicing line, then a continuous wave (CW) laser is used to generate thermal stress around cracks, and, finally, the wafer is separated. A finite-element (FE) model was applied to analyze the behavior of CW laser heating an

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5

Fan, Zhiqiang, Jiaxin Zhang, Zhuoqun Wang, Chong Shan, Chenguang Huang, and Fusheng Wang. "A State-of-the-Art Review of Fracture Toughness of Silicon Carbide: Implications for High-Precision Laser Dicing Techniques." Processes 12, no. 12 (2024): 2696. http://dx.doi.org/10.3390/pr12122696.

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Silicon carbide (SiC) stands out for its remarkable hardness, thermal stability, and chemical resistance, making it a critical material in advanced engineering applications, particularly in power electronics, aerospace, and semiconductor industries. However, its inherent brittleness and relatively low fracture toughness pose significant challenges during precision manufacturing processes, particularly during the laser stealth dicing—a pivotal process for wafer separation. This review provides a comprehensive analysis of the fracture toughness of SiC, exploring its dependence on microstructural

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Tamadate, Yuka, Hideki Maruyama, Katsunori Aoki, Takashi Ozawa, and Haruo Sorimachi. "Novel Backside Grinding and Laser Dicing Process for Cu Pillar Generated Low-k Wafer." International Symposium on Microelectronics 2013, no. 1 (2013): 1–4. http://dx.doi.org/10.4071/isom-2013-wp54_shinko_late.

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One of the challenges in using very thin die, which is needed in thin package, is how to dice it cleanly without chipping, delamination of fragile low-k insulation material and contamination of bonding pads. A narrow scribe line is also highly preferable for high wafer area utilization. The authors developed a novel "grooving and stealth laser process" to satisfy all of these criteria. Grooves are formed on test pads in die sawing area by a grooving laser beam, and then a stealth laser beam is focused into the bulk silicon, causing defect regions in the bulk silicon. Dicing tape is expanded so

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7

van Borkulo, Jeroen, Richard van der Stam, and Guido Knippels. "Multi Beam Full Cut Dicing of Thin Si IC Wafers." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2015, DPC (2015): 001446–74. http://dx.doi.org/10.4071/2015dpc-wp21.

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The ongoing trend to thinner wafers which are needed for continuous miniaturization, 3D packaging and IC performance, inevitably means that sole blade dicing evolution is coming to an end. Over the last years several technologies to handle the separation process of thin Si wafer dicing have been evaluated (DBG, Stealth, Plasma, etc). Although they are capable for certain applications to meet the process specifications, they achieve this at expense of flexibility, productivity and process costs. ALSI, the inventor of multi beam dicing for semiconductor materials, has developed a technology usin

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Ino, Takuichiro, Yohei Sonobe, Akihide Saimoto, and Tomokazu Hashiguchi. "Analysis of Residual Stress around Semi-Circular Surface Notches due to Excessive Pressure." Key Engineering Materials 754 (September 2017): 123–26. http://dx.doi.org/10.4028/www.scientific.net/kem.754.123.

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Residual stresses due to excessive internal pressure applied to an array of semi-circular surface notches is analyzed by body force method. The treated problem corresponds to a simple model of the Stealth Dicing (SD) which is expected as an alternative splitting technology applicable to brittle materials. In SD, laser beam of specific wave length is focused and scanned inside of the material to produce a SD-process zone which includes an array of microvoids. Each microvoid is thought to be received an excessive internal pressure due to thermal expansion and then material is split along a plane

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9

Liao, Kai, Wenjun Wang, Xuesong Mei, and Bin Liu. "High quality full ablation cutting and stealth dicing of silica glass using picosecond laser Bessel beam with burst mode." Ceramics International 48, no. 7 (2022): 9805–16. http://dx.doi.org/10.1016/j.ceramint.2021.12.182.

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10

Song, Qi, Zhe Zhang, Ziye Xu, et al. "Investigation on the Processing Quality of Nanosecond Laser Stealth Dicing for 4H-SiC Wafer." ECS Journal of Solid State Science and Technology 12, no. 3 (2023): 033012. http://dx.doi.org/10.1149/2162-8777/acc135.

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Silicon carbide (SiC), due to its characteristic materials performance, gets more attention in Radio Frequecy (RC) and High-power device fabrication. However, SiC wafer dicing has been a tricky task because of the high hardness and brittleness. The blade dicing suffers from poor efficiency and debris contaminants. Furthermore, the laser ablation dicing and Thermal Laser Separation (TSL) can have thermal damage and irregular crack propagation. In this study, Stealth Dicing (SD) with nanosecond pulse laser method was applied to 4H-SiC wafer. A series of experiments were conducted to analyze the

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11

Xu, Ziye, Hongmei Xu, Qi Song, et al. "High-speed and high-precision control of laser stealth dicing equipment based on interpolation and fitting." Journal of Physics: Conference Series 2587, no. 1 (2023): 012074. http://dx.doi.org/10.1088/1742-6596/2587/1/012074.

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Abstract As an advanced wafer dicing technology, stealth dicing has the advantage of better-cutting quality and faster-cutting speed than traditional blade dicing technology and has a broad application prospect for the future cutting of large and ultra-thin silicon wafers. The stealth dicing equipment involves two processes, i.e., wafer altimetry and follow-through processing in silicon wafer cutting, the altimetry accuracy of which determines the processing precision. In this paper, polynomial fitting, linear interpolation, and cubic spline interpolation are applied to predict the altimetry d

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12

Choi, MiKyeong, SeaHwan Kim, TaeJoon Noh, DongGil Kang, and SeungBoo Jung. "Si Characterization on Thinning and Singulation Processes for 2.5/3D HBM Package Integration." Materials 17, no. 22 (2024): 5529. http://dx.doi.org/10.3390/ma17225529.

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As stacking technologies, such as 2.5D and 3D packages, continue to accelerate in advanced semiconductor components, the singulation and thinning of Si wafers are becoming increasingly critical. Despite their importance in producing thinner and more reliable Si chips, achieving high reliability remains a challenge, and comprehensive research on the effects of these processing techniques on Si chip integrity is lacking. In this study, the impacts of wafer thinning and singulation on the fracture strength of Si wafers were systematically compared. Three different grinding processes, namely fine

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13

Lee, Hiu Hung, Erxuan Zhao, Dihan Chen, Nan Zhang, and Shih-Chi Chen. "Dual-beam stealth laser dicing based on electrically tunable lens." Precision Engineering 66 (November 2020): 374–81. http://dx.doi.org/10.1016/j.precisioneng.2020.08.009.

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14

Yang, Bo, Heng Wang, Sheng Peng, and Qiang Cao. "Precision Layered Stealth Dicing of SiC Wafers by Ultrafast Lasers." Micromachines 13, no. 7 (2022): 1011. http://dx.doi.org/10.3390/mi13071011.

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With the intrinsic material advantages, silicon carbide (SiC) power devices can operate at high voltage, high switching frequency, and high temperature. However, for SiC wafers with high hardness (Mohs hardness of 9.5), the diamond blade dicing suffers from problems such as debris contaminants and unnecessary thermal damage. In this work, a precision layered stealth dicing (PLSD) method by ultrafast lasers is proposed to separate the semi-insulated 4H-SiC wafer with a thickness of 508 μm. The laser power attenuates linearly from 100% to 62% in a gradient of 2% layer by layer from the bottom to

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15

Wen, Qiuling, Jinlin Yang, Wei Fang, Xiaoguang Wang, Feng Jiang, and Dekui Mu. "Impact of crystallographic orientation on picosecond laser stealth dicing of sapphire." Optics & Laser Technology 184 (June 2025): 112516. https://doi.org/10.1016/j.optlastec.2025.112516.

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16

Yang, Li Jun, H. Huang, N. Cai, Yang Wang, and J. Tang. "Experimental Research on UV Laser and High-Pressure Water-Assisted YAG Laser Dicing SiC Wafer." Advanced Materials Research 69-70 (May 2009): 243–47. http://dx.doi.org/10.4028/www.scientific.net/amr.69-70.243.

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In this paper, the comparative experimental research on DPSS UV laser (wavelength is 355nm) and high-pressure water-assisted YAG laser dicing SiC wafer was done. The results show that is strict with the performance of laser source and the dicing technique parameters in UV laser dicing the SiC wafer, and the dicing surface of good quality can be obtained only when the parameters of laser source and dicing technology vary in a narrow range. Contrarily, the SiC wafer dicing technology using high-pressure water-assisted YAG laser has a perfect flexibility with the laser source and dicing apparatus

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17

UCHIYAMA, Naoki. "Complete Dry Process Laser Dicing." Journal of the Japan Society for Precision Engineering 76, no. 7 (2010): 747–50. http://dx.doi.org/10.2493/jjspe.76.747.

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18

Lei, Menglai, Linghai Meng, Yucheng Lin, et al. "Stealth dicing strategy for fabricating the cleavage mirror facets of semiconductor laser." Materials & Design 251 (March 2025): 113695. https://doi.org/10.1016/j.matdes.2025.113695.

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19

Nakajima, Akira, Yosuke Tateishi, Hiroshi Murakami, et al. "High-Speed Dicing of SiC Wafers by Femtosecond Pulsed Laser." Materials Science Forum 821-823 (June 2015): 524–27. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.524.

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A novel dicing technology that utilizes femtosecond pulsed lasers (FSPLs) are demonstrated as a high-speed and cost-effective dicing process for SiC wafers. The developed dicing process consists of cleavage groove formation on a SiC wafer surface by the FSPL, followed by chip separation by pressing a cleavage blade. The effective FSPL scan speed on the SiC surfaces was 33 mm/s. Kerf loss can be negligible in the developed FSPL dicing process. In addition, the residual lattice strain in the FSPL-diced SiC chips was comparably small to that of the conventional mechanical process using diamond sa

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20

Jing, Zhi Sheng, Ze Long Zhou, Chen Mei, Xiang Yong Su, Zhuo Yang, and Yi Tao. "A Novel Method to Dicing Anodically Bonded Silicon Glass MEMS Wafers Based on UV Laser Technique." Applied Mechanics and Materials 511-512 (February 2014): 3–7. http://dx.doi.org/10.4028/www.scientific.net/amm.511-512.3.

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UV laser dicing has many advantages such as mechanical stress-free and dicing shape-free, but it is seldom used to dice multi-layer MEMS wafers because of the deposition of a lot of debris and heat affected zones around the dicing lines. In this paper, a novel UV laser dicing method for anodically bonded wafers is presented. The heat caused split of the bonded silicon and glass around the dicing line is prevented by fabricating recesses on either the glass wafer or the silicon wafer. The Finite Element Method (FEM) in the ANSYSTM software was utilized to analyze the temperature and thermal str

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21

van Borkulo, Jeroen, Richard van der Stam, Won Chul Jung, and Paul Verburg. "Multi Beam Full Cut Dicing of Thin Si IC wafers." International Symposium on Microelectronics 2015, no. 1 (2015): 000474–78. http://dx.doi.org/10.4071/isom-2015-wp52.

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Over the last years singulation of thin semiconductor wafers with (ultra) low-κ top layer has become a challenge in the production process of integrated circuits. The traditional blade dicing process is encountering serious yield issues. These issues can be addressed by applying a laser grooving process prior to the blade dicing, which is the process of reference nowadays. However, as the wafers are becoming thinner this process flow is not providing the yield and productivity required. In this article the unique ASMPT multi beam technology is presented which addresses both concerns and enable

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22

Wang, Lingfeng, Chen Zhang, Feng Liu, Huai Zheng, and Gary J. Cheng. "Ultrafast pulsed laser stealth dicing of 4H-SiC wafer: Structure evolution and defect generation." Journal of Manufacturing Processes 81 (September 2022): 562–70. http://dx.doi.org/10.1016/j.jmapro.2022.06.064.

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23

Wei, Frank, Tomotaka Tabuchi, and Hideyuki Sando. "Plasma Dicing Process-Flows for Advanced Packaging Fabrications." International Symposium on Microelectronics 2017, no. 1 (2017): 000215–23. http://dx.doi.org/10.4071/isom-2017-wa31_102.

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Abstract Comprehensive investigations were conducted on identifying integration efforts needed to adapt plasma dicing technology in BEOL pre-production environments. First, the authors identified a few suitable process flows. Within the plasma dicing process flows, laser grooving before plasma etching was shown to be a key unit process to control the resulting die sidewall quality. Significant improvement on laser grooving quality has been demonstrated. Through these efforts, extremely narrow kerfs and near ideal dies strengths were achieved on Si dies. The Bosch-etching based plasma dicing pr

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24

Cheng, Jian, Zhiwei Zhang, Luo Zhang, et al. "Flexible tuned, multi-focus laser stealth dicing of JGS3 quartz glass: From algorithm to practice." Optics & Laser Technology 170 (March 2024): 110164. http://dx.doi.org/10.1016/j.optlastec.2023.110164.

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25

Wang, Yun, Yutang Dai, Farhan Mumtaz, and Kaiyan Luo. "Advanced techniques in quartz wafer precision processing: Stealth dicing based on filament-induced laser machining." Optics & Laser Technology 171 (April 2024): 110474. http://dx.doi.org/10.1016/j.optlastec.2023.110474.

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26

Le Barillec, Olivier, Magali Davenet, Arnaud Favre, et al. "Advanced Vacuum Wafer Drying for Thermal Laser Separation Dicing Assessment Results from European Collaborative “SEAL” Project." Solid State Phenomena 195 (December 2012): 252–57. http://dx.doi.org/10.4028/www.scientific.net/ssp.195.252.

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Based on recent progress on laser-based wafer dicing equipment and process, the partners adixen, Fraunhofer IISB and JENOPTIK investigated the use of a vacuum based decontamination process to dry and to decontaminate the substrate surface of the diced wafers from water residuals, which are a side-effect of the TLS (thermal laser separation) approach. The decontamination process was achieved by using an adixen vacuum drying module prototype further to the JENOPTIK TLS dicing process. Within the frame of the European collaborative project SEAL, supported by the European Commission, experimental

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27

Fulton, Stewart, Oliver Ansell, Janet Hopkins, Taku Umemoto, and Takuo Nishida. "Dicing Tape Performance in a Plasma Dicing Environment." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2019, DPC (2019): 001189–208. http://dx.doi.org/10.4071/2380-4491-2019-dpc-presentation_tha1_068.

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Plasma dicing, as a means of isolating individual integrated circuits from within a fully processed semiconductor substrate, is still an emerging technology but is now considered the latest step in the evolution in device singulation. With the trend towards smaller, thinner more robust devices, many chip manufacturers are considering, or already switching, to a plasma dicing approach.[1, 2] The high aspect ratio, deep reactive ion etching of silicon using a Bosch process, leverages some distinct advantages over the more physical methods of device singulation. [3] Although the more established

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28

Zhang, Yiyun, Haizhong Xie, Haiyang Zheng, et al. "Light extraction efficiency improvement by multiple laser stealth dicing in InGaN-based blue light-emitting diodes." Optics Express 20, no. 6 (2012): 6808. http://dx.doi.org/10.1364/oe.20.006808.

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29

Evertsen, Rogier. "(Invited) Wafer Singulation - Laser Processing Combined: From Past to Future Hybrid Bonding." ECS Meeting Abstracts MA2023-02, no. 17 (2023): 1180. http://dx.doi.org/10.1149/ma2023-02171180mtgabs.

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Wafer singulation in the semiconductor industry has transformed from single step, straight forward diamond blade cutting of the product wafer into a process flow which may involve several different steps in different orders [1]. Nowadays, lasers play a central role in these schemes, involving ablation-based dicing or grooving, cold-ablation regimes and sub-surface material modification methods. Over the years, laser singulation and grooving has proven to provide solutions for different substrate materials and front- or backside layers [2]. Obviously, central topics for a production environment

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30

van Borkulo, Jeroen, Rene Hendriks, and Peter Dijkstra. "Comparison between Single & Multi Beam Laser Grooving of Low-K layers." International Symposium on Microelectronics 2012, no. 1 (2012): 000433–39. http://dx.doi.org/10.4071/isom-2012-tp53.

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The traditional blade dicing technology has gone through an impressive evolution keeping up with quality, cost and miniaturization requirements that the semiconductor technology roadmaps introduced and specified. However, since wafer technologies have dropped below 90nm node and low k materials were introduced it became clear that blade dicing evolution came to an end and expensive hybrid solutions such as combined laser grooving processes and blade dicing technologies were required to achieve the desired product reliability. Similar situations have been seen with the ongoing trend to thinner

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31

Han, Lei, Quanlong Wang, Chenglong Ma, Bangjie Gu, Xiao Li, and Wentao Wei. "Research on the formation and evolution mechanism of cracks in laser stealth dicing of silicon carbide crystals." Journal of Molecular Graphics and Modelling 132 (November 2024): 108830. http://dx.doi.org/10.1016/j.jmgm.2024.108830.

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32

van der Stam, Richard, Jeroen van Borkulo та Peter Dijkstra. "Multi Beam Low-κ Grooving Evaluation of various removal principals". International Symposium on Microelectronics 2013, № 1 (2013): 000564–68. http://dx.doi.org/10.4071/isom-2013-wa53.

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Over the years the singulation of semiconductor wafers with a low-κ top structures has become a challenge in the production process of integrated circuits. With the traditional blade dicing process serious yield issues are encountered. These problems can be addressed by applying a laser grooving process before the blade dicing. However, these processes are slow or generate a significant heat impact on the wafer. In this article the special ALSI multi beam technology is presented which makes a high productivity grooving process possible with a very limited heat affected zone.

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33

Lewke, Dirk, Karl Otto Dohnke, Hans Ulrich Zühlke, et al. "Thermal Laser Separation – A Novel Dicing Technology Fulfilling the Demands of Volume Manufacturing of 4H-SiC Devices." Materials Science Forum 821-823 (June 2015): 528–32. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.528.

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One challenge for volume manufacturing of 4H-SiC devices is the state-of-the-art wafer dicing technology – the mechanical blade dicing which suffers from high tool wear and low feed rates. In this paper we discuss Thermal Laser Separation (TLS) as a novel dicing technology for large scale production of SiC devices. We compare the latest TLS experimental data resulting from fully processed 4H-SiC wafers with results obtained by mechanical dicing technology. Especially typical product relevant features like process control monitoring (PCM) structures and backside metallization, quality of diced

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34

Mendes, Marco, Jeffrey Sercel, Mathew Hannon, et al. "Advanced Laser Scribing for Emerging LED Materials." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, DPC (2011): 001443–71. http://dx.doi.org/10.4071/2011dpc-wa32.

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Lasers are becoming increasingly important in today's LED revolution and are essential for increasing the efficiency and reducing manufacturing cost of LEDs. Diode pumped solid state lasers excel in scribing horizontal type LEDs on sapphire, silicon, silicon carbide, III-nitrides (gallium nitride and aluminum nitride), as well as III-V semiconductors (gallium arsenide, gallium phosphide). These lasers are also used for dicing vertical type LEDs, which are becoming increasingly more important, often using high thermal conductivity metallic substrates such as copper, CuW and molybdenum. In this

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35

NINOMIYA, Takafumi, Hiroshi SAWADA, Kosuke KAWAHARA, Atsushi YOKOTANI, and Kou KUROSAWA. "Dicing Process for Thin Silicon Wafer by Using Femtosecond-laser." Journal of the Japan Society for Precision Engineering, Contributed Papers 70, no. 12 (2004): 1554–58. http://dx.doi.org/10.2493/jspe.70.1554.

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36

Wen, Qiuling, Jinhong Chen, Guoqin Huang, Changcai Cui, and Dekui Mu. "Dependence of Monocrystalline Sapphire Dicing on Crystal Orientation Using Picosecond Laser Bessel Beams." Micromachines 14, no. 4 (2023): 772. http://dx.doi.org/10.3390/mi14040772.

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Dicing is a critical step in the manufacturing process for the application of sapphire. In this work, the dependence of sapphire dicing on crystal orientation using picosecond Bessel laser beam drilling combined with mechanical cleavage was studied. By using the above method, linear cleaving with on debris and zero tapers was realized for the A1, A2, C1, C2, and M1 orientations, except for the M2 orientation. The experimental results indicated that characteristics of Bessel beam-drilled microholes, fracture loads, and fracture sections of sapphire sheets were strongly dependent on crystal orie

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37

Fornaroli, C., J. Holtkamp, and A. Gillner. "Dicing of Thin Si Wafers with a Picosecond Laser Ablation Process." Physics Procedia 41 (2013): 603–9. http://dx.doi.org/10.1016/j.phpro.2013.03.122.

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38

Biesheuvel, Kees, and Patrick Huberts. "High speed wafer grooving with UV‐USP lasers." PhotonicsViews 21, no. 2 (2024): 48–51. http://dx.doi.org/10.1002/phvs.202400009.

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AbstractThis article explores the application of ultraviolet ultrashort‐pulse (UV‐USP) laser grooving in tandem with other process steps such as plasma dicing as a practical approach to enable advanced microelectronic packaging. The non‐contact nature of UV‐USP laser grooving, along with its ability to ablate material with minimal lateral thermal damage, results in clean and precise grooving lines.

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39

Tangwarodomnukun, Viboon, and Jun Wang. "Laser Micromachining of Silicon Substrates." Advanced Materials Research 76-78 (June 2009): 416–21. http://dx.doi.org/10.4028/www.scientific.net/amr.76-78.416.

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Laser micromachining has been widely used for micro-component fabrication of various materials, such as silicon substrates where silicon wafer is ablated accurately and precisely through marking, scribing, drilling or dicing. Thermal damages can occur on the substrates when improper process parameters and methods are used. This paper presents a review on the micromachining of silicon substrates using conventional and novel lasers as well as water-assisted laser micromachining technologies. The basic concepts and approaches of the technologies are discussed along with the challenges to damage-f

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40

Zhang Huaizhi, 张怀智, 徐家明 Xu Jiaming, 张兰天 Zhang Lantian та 秦应雄 Qin Yingxiong. "硅晶圆多焦点激光隐切算法与实验". Chinese Journal of Lasers 49, № 2 (2022): 0202018. http://dx.doi.org/10.3788/cjl202249.0202018.

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41

Olmstead, Knowlton, Curtis Zwenger, and Richard Strode. "Memory Packaging Challenges for a Growing Market." International Symposium on Microelectronics 2021, no. 1 (2021): 000207–11. http://dx.doi.org/10.4071/1085-8024-2021.1.000207.

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Abstract Increasing demands for storage and high-performance memory in applications such as artificial intelligence (AI), machine learning and processing storage are driving long-term growth in the market. This paper will highlight the key challenges encountered in packaging next-generation memory devices and discuss some of the technological developments required to address them while considering performance, cost, and yield. An evaluation is highlighted of a remote microwave plasma process to remove damage caused by laser ablation during the wafer dicing process that shows an improvement in

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42

Wen, Qiuling, Ye Yang, Jing Lu, Hui Huang, and Changcai Cui. "Study on picosecond laser stealth dicing of 4H-SiC along [112¯0] and [11¯00] crystal orientations on Si-face and C-face." Optics & Laser Technology 162 (July 2023): 109300. http://dx.doi.org/10.1016/j.optlastec.2023.109300.

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Li, Jie, Fu Liu, Wei Zhou, and Yi Zhang. "The influence of cracks in the coupling region of micro-grinding and laser stealth combined dicing on the quality of cutting side walls." Journal of Manufacturing Processes 119 (June 2024): 856–66. http://dx.doi.org/10.1016/j.jmapro.2024.04.020.

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Baek, Jae Yun, Kyung Mook Kang, Hyeong Jun Kim, et al. "Manufacturing Process of Polymeric Microneedle Sensors for Mass Production." Micromachines 12, no. 11 (2021): 1364. http://dx.doi.org/10.3390/mi12111364.

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In this work, we present a fabrication process for microneedle sensors made of polylactic acid (PLA), which can be utilized for the electrochemical detection of various biomarkers in interstitial fluid. Microneedles were fabricated by the thermal compression molding of PLA into a laser machined polytetrafluoroethylene (PTFE) mold. Sensor fabrication was completed by forming working, counter, and reference electrodes on each sensor surface by Au sputtering through a stencil mask, followed by laser dicing to separate individual sensors from the substrate. The devised series of processes was desi

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Zhao, Chunyang, Zhihui Yang, Shuo Kang, Xiuhong Qiu, and Bin Xu. "High-Speed Laser Cutting Silicon-Glass Double Layer Wafer with Laser-Induced Thermal-Crack Propagation." Processes 11, no. 4 (2023): 1177. http://dx.doi.org/10.3390/pr11041177.

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This paper studied laser induced thermal-crack propagation (LITP) dicing of a glass-silicon double-layer wafer with high scanning speed. A defocusing continuous laser was used in the experimental system as the volumetric heat source for the glass layer and the surface heat source for the silicon layer. Based on the principle of thermal-crack propagation, the commercial software ABAQUS was used on the simulated analysis, and the results of temperature field and thermal stress field distribution with high and low speed were compared. The experiment was executed in accordance with the simulation

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Tran, Tu Anh, Varughese Mathew, Wen Shi Koh, K. Y. Yow, and Y. K. Au. "Dicing Development for low-k Copper Wafers using Nickel-Palladium-Gold Bond Pads for Automotive Application." International Symposium on Microelectronics 2012, no. 1 (2012): 001085–96. http://dx.doi.org/10.4071/isom-2012-thp31.

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New automotive requirements expect plastic packages to survive higher operating temperatures with extended thermal duration. Mission profiles for under-the-hood and transmission application historically specified minimal duration at maximum junction temperature, such as 50 total hours at 150C, while keeping most of the total operating duration at lower temperatures. Further module integration and more stringent environmental requirements push modules and thus plastic packages closer to the heat source. As such, new mission profiles include more than 3500 total hours at 150°C. To satisfy new au

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Val, Christian, Pascal Couderc, and Pierre Lartigues. "Stacking of Known Good Rebuilt Wafers without TSV - Applications to Memories and SiP." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, DPC (2010): 002020–74. http://dx.doi.org/10.4071/2010dpc-tha12.

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The 3-D interconnection started at 3D PLUS in 1996 and led to the stacking of nearly all types of analogical and logical components, sensors, MEMS, etc for the Hi-Rel field (Space, Defence, Medical, Industrial). This technology is extremely robust (−130°C +175°C, 40000g), and is fully qualified by all worldwide most important Space Agencies and for Defence applications. A technological break started in 2002 ; It consisted in another 20 to 30 reduction factor of the weight and volume of these 3-D modules.The Z pitch is 100μm and the X Y size is given by the size of the larger die plus 100μm of

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Sui, Xue Ye, Jie Xu, Mei Ling Wei, Chong Hai Wang, Chang Ling Zhou, and Rui Xiang Liu. "Laser Stealth Properties for SiO₂ Hollow Spheres with a Layer of Copper." Advanced Materials Research 624 (December 2012): 38–41. http://dx.doi.org/10.4028/www.scientific.net/amr.624.38.

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A kind of SiO2 hollow spheres with a layer of copper cladding have been prepared using the electroless copper plating metal processing technology on the surface of core material. We Study the effects of the process parameters on the properties of materials, and measure spectral reflectance for the SiO2 hollow spheres with the surface modification. The results show that the reflectance is about 4% for the wavelength of 1.06μm and is about 0.44% for 10.6μm wavelength. This compound hollow sphere structures can be act as laser camouflage materials.

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Chen, Ching Chia, Yu-Po Wang, Jensen Tsai, and Hsin Long Chen. "Advanced Die Saw Technology for WLCSP Reliability Enhancement." International Symposium on Microelectronics 2019, no. 1 (2019): 000323–26. http://dx.doi.org/10.4071/2380-4505-2019.1.000323.

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Abstract As consumer and portable devices get thinner and more functionality. Chips which are made by less than 28 nm node wafer with extreme Low-k (ELK) inter metal dielectric material is a trend in order to contain more transistors and to lower power consumption. However, side wall crack (SWC) for WLCSP is one of the major challenges since ELK layer getting brittle. Laser grooving is applied to remove metal before blade saw, but the high temperature during laser grooving usually easily generates HAZ (heat-affected zone) which can induce stress concentration and lower chip strength. The laser

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Val, Christian, Pascal Couderc, and Nadia Boulay. "Stacking of Known Good Rebuilt Wafers without TSV - Industrial Applications." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, DPC (2011): 001126–74. http://dx.doi.org/10.4071/2011dpc-tp36.

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Abstract:

The 3-D interconnection started at 3D PLUS in 1996 and led to the stacking of nearly all types of analogical and logical components, sensors, MEMS, etc for the Hi-Rel field (Space, Defence, Medical, Industrial). This technology is extremely robust (−130 °C +175 °C, 40000g), and is fully qualified by all worldwide most important Space Agencies, for Defence applications and Harsh environment. A technological break started in 2002 ; it consisted in another 20 to 30 reduction factor of the weight and volume of these 3-D modules. The Z pitch is 100 μm and the X Y size is given by the size of the la

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