Relevant bibliographies by topics / TCAD Transconductance

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Academic literature on the topic 'TCAD Transconductance'

Author: Grafiati
Published: 2 June 2025
Last updated: 31 July 2025

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Journal articles on the topic "TCAD Transconductance"

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Morankar, Niraj, Raj Patil, Yash Mahajan, Pranjal Patil, and Santosh Wagaj. "Simulation of Junctionless Transistor for Low Power Mix Circuit." International Journal for Research in Applied Science and Engineering Technology 10, no. 5 (2022): 3874–79. http://dx.doi.org/10.22214/ijraset.2022.43253.

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Abstract: In this work simulation of Double Gate Junction less transistor has been carried out. Comparitive study of the various parameters namely; transconductance(gm), output conductance(gd), DIBL, Subthreshold slope, Ion/Ioff, electric field and Potential. Simulation is carried out in Cogenda Visual TCAD simulator. Comparative study shows using double gate junctionless transistor reduces short channel effect such as DIBL, Subthreshold Slope, Ion/Ioff. Double Gate Junctionless transistor has higher transconductance(gm) and lower output transconductance(gd) compared to conventional junction t
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Morankar, Niraj, Raj Patil, Yash Mahajan, Pranjal Patil, and Santosh Wagaj. "Simulation of Junctionless Transistor for Low Power Mix Circuit." International Journal for Research in Applied Science and Engineering Technology 10, no. 5 (2022): 3874–79. http://dx.doi.org/10.22214/ijraset.2022.43253.

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Abstract: In this work simulation of Double Gate Junction less transistor has been carried out. Comparitive study of the various parameters namely; transconductance(gm), output conductance(gd), DIBL, Subthreshold slope, Ion/Ioff, electric field and Potential. Simulation is carried out in Cogenda Visual TCAD simulator. Comparative study shows using double gate junctionless transistor reduces short channel effect such as DIBL, Subthreshold Slope, Ion/Ioff. Double Gate Junctionless transistor has higher transconductance(gm) and lower output transconductance(gd) compared to conventional junction t
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3

K.Ullah, S.Riaz M.Habib F.Abbas S.Naseem I.Shah A.Bukhtiar. "Effect of Channel Doping Concentration on the Impact ionization of nChannel Fully Depleted SOI MOSFET." International Journal of Engineering Works 2, no. 2 (2015): 18–22. https://doi.org/10.5281/zenodo.15756.

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Impact ionization in fully depleted (FD) Silicon On Insulator (SOI) n-Channel MOSFET is investigated as a function of the doping concentration. We have found that impact ionization increases with the decrease in the doping concentration and vice versa. Simulation results obtained from Sentaurus TCAD with the higher doping concentration can control the threshold voltage (Vth). Furthermore we have examined the effect of doping concentration on the transconductance (gm) and have observed that transconductance is inversely proportional of the doping concentration.
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K., Ullah S. Riaz M.Habib F. Abbas S. Naseem G. Abbas. "Effect of High Temperature on the Impact Ionization of N-Channel Fully Depleted SOI MOSFET." International Journal of Engineering Works 1, no. 3 (2014): 48–51. https://doi.org/10.5281/zenodo.15750.

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High temperature effects on the impact ionization of the n-channel fully depleted (FD) SOI MOSFET are investigated over a wide range of temperature from 300 to the 600 K by using TCAD. In particular, we have studied the current voltage characteristics (Id-Vd and Id-Vg ) , threshold voltage (Vth)and transconductance (gm). By the simulation results, we have analyzed that impact ionization decreases with increasing the temperature and vice versa. Furthermore, we have observed that threshold voltage and transconductance are both inversely proportional to the temperature. 
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Arafat, I. Sheik, N. B. Balamurugan, and C. Priya. "Effects of Roughness Scattering in Carrier Transport of Near Ballistic Silicon NanoWire MOSFET." Applied Mechanics and Materials 573 (June 2014): 201–8. http://dx.doi.org/10.4028/www.scientific.net/amm.573.201.

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– In this paper, we have investigated the Scattering effects in Carrier Transport of Near-ballistic SiNW MOSFET, which incorporates elastic scattering, optical phonon emission and its combination with Roughness Scattering. Current–voltage (I–V) characteristics of Proposed model is compared with Natori’s Ballistic and Quasi-Ballistic Transport model. We study the impact of Surface Roughness in the device leads on the current variability of a Gate-All-Around (GAA) SiNW MOSFET, which shows a remarkable decrease in electric current, mobility variation and transconductance because of scattered mobi
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Adak, Sarosij, Sanjit Kumar Swain, Hemant Pardeshi, Hafizur Rahaman, and Chandan Kumar Sarkar. "Effect of Barrier Thickness on Linearity of Underlap AlInN/GaN DG-MOSHEMTs." Nano 12, no. 01 (2017): 1750009. http://dx.doi.org/10.1142/s1793292017500096.

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In this proposed work, an extensive study on the linearity performance of underlap AlInN/GaN double gate metal oxide semiconductor high electron mobility transistors (MOS-HEMT) has been analyzed using 2D Sentaurus TCAD simulation. Specifically a brief comparison is made on the linearity and intermodulation distortion characteristics of the proposed device due to variation of barrier layer thickness from 2 nm to 6 nm. Various parameters such as transconductance ([Formula: see text], second-order transconductance ([Formula: see text]), third-order transconductance ([Formula: see text]), second-o
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7

DWIVEDI, A. D. D., and POOJA KUMARI. "TCAD SIMULATION AND PERFORMANCE ANALYSIS OF SINGLE AND DUAL GATE OTFTs." Surface Review and Letters 27, no. 05 (2019): 1950145. http://dx.doi.org/10.1142/s0218625x19501452.

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This paper presents finite element-based numerical simulation and performance analysis of dual and single gate pentacene-based organic thin film transistors (OTFTs) using technology computer-aided design (TCAD) tools. Electrical characteristics of the devices have been simulated using 2D numerical device simulation software ATLAS™ from Silvaco International. Also, device parameters like threshold voltage, mobility, transconductance, subthreshold swing and current on/off ratio of the single and dual gate OTFTs have been extracted and compared.
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8

Mo, Haifeng, Yaohui Zhang, and Helun Song. "Improving Linearity and Robustness of RF LDMOS by Mitigating Quasi-Saturation Effect." Active and Passive Electronic Components 2019 (July 14, 2019): 1–7. http://dx.doi.org/10.1155/2019/8425198.

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This paper discusses linearity and robustness together for the first time, disclosing a way to improve them. It reveals that the nonlinear transconductance with device working at quasi-saturation region is significant factor of device linearity. The peak electric field is the root cause of electron velocity saturation. The high electric field at the drift region near the drain will cause more electron-hole pairs generated to trigger the parasitic NPN transistor turn-on, which may cause failure of device. Devices with different drift region doping are simulated with TCAD and measured. With LDD4
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Osykin, Andrey, Aleksandr Potupchik, and Kirill Panyshev. "Verilog-A model of the impurity freeze-out in LDD regions at cryogenic temperatures." Modeling of systems and processes 16, no. 2 (2023): 93–100. http://dx.doi.org/10.12737/2219-0767-2023-16-2-93-100.

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The article shows the practical implementation of the impurity freeze-out effect in the lightly-doped areas of the drain and source (LDD) in the Verilog-A model of the resistor. This model is based on a theoretical understanding of the freeze-out effect at cryogenic temperatures and data from the TCAD simulation of a MOSFET. The TCAD simulation data were represented by transconductance characteristics of n- and p-channel transistors Id(Vg) in linear mode (Vd=0.1 V) at temperature range from -200 °C to 27 °C for transistors with dimensions 10 um × 10 um. The model is applicable to the use as pa
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10

Bouguenna, Abdellah, Abdelhadi Feddag, Driss Bouguenna, and Ibrahim Farouk Bouguenna. "Comparative Study and Analytical Modeling of AlGaN/GaN HEMT and MOSHEMT Based Biosensors for Biomolecules Detection." East European Journal of Physics, no. 1 (March 3, 2025): 284–89. https://doi.org/10.26565/2312-4334-2025-1-33.

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In this study, a model has been developed to analyze AlGaN/GaN high-electron-transistor (HEMT) and metal-oxide semiconductor high-electron-transistor (MOSHEMT) based biosensors. The model focuses on detecting biomolecules such as ChOx, protein, streptavidin and uricase by modulating the dielectric constant. The sensitivity parameters used for biomolecule detection include drain current, transconductance, and drain off sensitivity. The dielectric constant is adjusted based on the specific biomolecule being sensed by the biosensor. The variation in dielectric leads to changes in drain current, w
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Book chapters on the topic "TCAD Transconductance"

1

Anusha, Kadiyam, and Arun Dev Dhar Dwivedi. "Comparative Study of DNTT-Based Low-Voltage BGBC, BGTC, TGBC and TGTC Configurations of OTFTs." In Organic Electronics - From Fundamentals to Applications [Working Title]. IntechOpen, 2024. http://dx.doi.org/10.5772/intechopen.1006308.

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In this chapter, we present the numerical simulation and performance analysis of dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT)-based OTFTs by solving fundamental semiconductor equations using finite element method. This work offers a device simulation-based comparative study of low-voltage dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) based on BGBC, BGTC, TGBC, and TGTC configurations of organic thin film transistors (OTFTs). Technology Computer Aided Design (TCAD) has been performed using ATLAS device simulator from Silvaco Inc. by taking into account the density of defects st
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2

Yu, Tianyu, Liang Dai, Zhifeng Zhao, Weifeng Lyu, and Mi Lin. "Study of Work-Function Variation on Performance of Dual-Metal Gate Fin Field-Effect Transistor." In Machine Learning and Artificial Intelligence. IOS Press, 2020. http://dx.doi.org/10.3233/faia200805.

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The impact of work-function variation (WFV) on performance of an inversion-mode (IM) dual-metal gate (DMG) fin field-effect transistor (FinFET) was investigated for the first time. The statistical fluctuations induced by WFV on the threshold-voltage (VTH), transconductance (gm), and subthreshold slope (SS) were demonstrated and estimated utilizing a 3D technology computer-aided design (TCAD) simulator. We found that the performance variations of the DMG FinFET were affected by two different metals near the drain and near the source, respectively. Additionally, this effect of the two metals on
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Teja, Lakshmi Nivas, Rashi Chaudhary, Shreyas Tiwari, and Rajesh Saha. "Elimination of the Impact of Trap Charges through Heterodielectric BOX in Nanoribbon FET." In Nanoelectronic Devices and Applications. BENTHAM SCIENCE PUBLISHERS, 2024. http://dx.doi.org/10.2174/9789815238242124010014.

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In this study, a heterodielectric BOX (HDB) Nanoribbon FET (NR-FET) is built using the TCAD device simulator to reduce the effect of trap charges on numerous electrical properties in traditional NR-FETs. Initially, a reasonable study in terms of transfer characteristics of NR-FET is highlighted between homodielectric and HD BOX. Because of the existence of high-k dielectric below the drain area, it is assumed that the impact of trap charges is insignificant in HDB NR-FET. Furthermore, the trap charge effect on transconductance (gm ), total gate capacitance (Cgg), and cut-off frequency (fc ) in
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Journal articles
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