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Journal articles on the topic 'Trenched'

Author: Grafiati

Published: 3 June 2025

Last updated: 31 July 2025

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1

LaFevor, Matthew C., and Carlos E. Ramos-Scharrón. "Effects of Hillslope Trenching on Surface Water Infiltration in Subalpine Forested Catchments." Hydrology 8, no. 4 (2021): 147. http://dx.doi.org/10.3390/hydrology8040147.

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Concerns over freshwater scarcity for agriculture, ecosystems, and human consumption are driving the construction of infiltration trenches in many mountain protected areas. This study examines the effectiveness of infiltration trenches in a subalpine forested catchment in central Mexico, where public and private organizations have been constructing trenches for ~60 years. We rely on empirical data to develop rainfall-runoff models for two scenarios: a baseline (no trenches) and a trenched scenario. Field measurements of infiltration capacities in forested and trenched soils (n = 56) and two ye

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2

Lindh, Briana C., Andrew N. Gray, and Thomas A. Spies. "Responses of herbs and shrubs to reduced root competition under canopies and in gaps: a trenching experiment in old-growth Douglas-fir forests." Canadian Journal of Forest Research 33, no. 10 (2003): 2052–57. http://dx.doi.org/10.1139/x03-120.

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We tested the effect of root trenching on vegetation in closed-canopy and gap locations in Douglas-fir (Pseudotsuga menziesii (Mirb.) Franco) forests. Based on theory, we expected belowground competition to be intense in a region with low summer rainfall, and trench responses were expected to be greater in the high light environment of the gaps. We installed 1 m deep trenches around study plots and lined the trenches to prevent reinvasion by tree roots. Soil moisture was measured monthly during the growing season for the first 3 years after trench installation. Vegetation in these trenched plo

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3

Banzhaf, Christian T., Michael Grieb, Achim Trautmann, Anton J. Bauer, and Lothar Frey. "Investigation of Trenched and High Temperature Annealed 4H-SiC." Materials Science Forum 778-780 (February 2014): 742–45. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.742.

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This study focuses on the effects of a high temperature anneal after dry etching of trenches (post-trench anneal, PTA) on 4Hsilicon carbide (4H-SiC). We aim at the optimum 4H-SiC post-trench treatment with respect to the fabrication and the operation of a trenched gate metal oxide semiconductor field effect transistor (Trench-MOSFET). PTA significantly reduces micro-trenches, also called sub-trenches [, in the corners of the bottom of the trench. This is highly beneficial in case the etched trench sidewall is used as the channel of a Trench-MOSFET. However, PTA is also shown to cause a slight

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4

Boualem, Khadidja, and Abbes Azzi. "Blowing Ratio Effect on Film Cooling Performance for a Row Holes Installed in Different Trench Configurations." Diffusion Foundations 28 (December 2020): 65–75. http://dx.doi.org/10.4028/www.scientific.net/df.28.65.

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In the present study, a numerical analysis was performed to evaluate the performance of cooling hole embedded in different trenched designs (triangular trench, semi-cylindrical trench and corrugated trench) in improving the film cooling efficiency over a flat plate. These concepts are compared to the rectangular trenched and the traditional cylindrical hole. The commercial software ANSYS CFX 18 was used to conduct a series of required numerical calculations. The centerline and laterally averaged film cooling effectiveness and total pressure loss coefficient for the five cases are analyzed at t

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5

Yin, Jiangjiang, Kenan Huang, and Ying Huang. "Investigation on Shallow Trenched-Hole Film Cooling Effectiveness at Turbine Blade Pressure Side." Journal of Physics: Conference Series 2441, no. 1 (2023): 012013. http://dx.doi.org/10.1088/1742-6596/2441/1/012013.

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Abstract Numerical simulations are performed to investigate the effects of shallow trenches on the adiabatic film cooling effectiveness (ηad) of single row film cooling on the pressure side of a turbine guide vane, under the cascade representative conditions. The mainstream inlet Reynolds number is set as 4×105. A single row of film cooling holes are located at 30% axial chord length at the pressure side. Three shallow trenches with different widths (w/d=2, 2.5 and 3) but have the same depth (0.75d) and a cylindrical film cooling hole are compared in the current study at M= 2.0. The results sh

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6

Kim, Sangyeob, and Ogyun Seok. "Designs of Charge-Balanced Edge Termination Structures for 3.3 kV SiC Power Devices Using PN Multi-Epitaxial Layers." Micromachines 16, no. 1 (2024): 47. https://doi.org/10.3390/mi16010047.

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We demonstrated 3.3 kV silicon carbide (SiC) PiN diodes using a trenched ring-assisted junction termination extension (TRA-JTE) with PN multi-epitaxial layers. Multiple P+ rings and width-modulated multiple trenches were utilized to alleviate electric-field crowding at the edges of the junction to quantitively control the effective charge (Qeff) in the termination structures. The TRA-JTE forms with the identical P-type epitaxial layer, which enables high-efficiency hole injection and conductivity modulation. The effects of major design parameters for the TRA-JTE, such as the number of trenches

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Lastovicka-Medin, Gordana, Gregor Kramberger, Jiri Kroll, and Mateusz Rebarz. "Impact of the Guard Rings on Self-Induced Signal and Leakage Current in Trench-Isolated Low Gain Avalanche Diodes." Sensors 25, no. 10 (2025): 3006. https://doi.org/10.3390/s25103006.

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In this contribution, we explored the interplay of guard ring (GR) configuration and isolation structures, as well as irradiation effects, which all together create a rich landscape of phenomena such as self-induced signals (“ghosts”) in trench-isolated Low-Gain Avalanche Diodes (TI-LGADs). The ghost effect is related to the increased surface current due to presence of SiO2 trenches (and defects) in studied diodes, but it is also affected by interplay between the guard ring(s) and the n+ bias ring, implanted in inter-pixel region of these devices. In double-trenched sensors, the n+ bias ring i

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8

Wu, Kuen-Hsien, and Chia-Chun Tang. "Efficiency Enhancement of Nanoporous Silicon/Polycrystalline-Silicon Solar Cells by Application of Trenched Electrodes." International Journal of Photoenergy 2014 (2014): 1–4. http://dx.doi.org/10.1155/2014/307643.

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Trenched electrodes were proposed to enhance the short-circuit current and conversion efficiency of polycrystalline-silicon (poly-Si) solar cells with nanoporous silicon (NPS) surface layers. NPS films that served as textured surface layers were firstly prepared on heavily doped p+-type (100) poly-Si wafers by anodic etching process. Interdigitated trenches were formed in the NPS layers by a reactive-ion-etch (RIE) process and Cr/Al double-layered metal was then deposited to fill the trenches and construct trenched-electrode-contacts (TEC’s). Cells with TEC structures (called “TEC cells”) obta

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Banzhaf, Christian T., Michael Grieb, Martin Rambach, Anton J. Bauer, and Lothar Frey. "Impact of Post-Trench Processing on the Electrical Characteristics of 4H-SiC Trench-MOS Structures with Thick Top and Bottom Oxides." Materials Science Forum 821-823 (June 2015): 753–56. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.753.

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This study focuses on the evaluation of different post-trench processes (PTPs) for Trench-MOSFETs. Thereto, two different types of inert gas anneals at process temperatures above 1250 °C are compared to a sacrificial oxidation as PTP. The fabricated 4H-SiC Trench-MOS structures feature a thick silicon dioxide (SiO2) both at the wafer surface (‘top’) and in the bottom of the trenches (‘bottom’) in order to characterize only the thin gate oxide at the trenched sidewalls. It is shown that an inert gas anneal at a process temperature between 1400 °C and 1550 °C yields uniform current/electric fiel

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10

Hsiao, Chun Ching, Chin Yu Chang, An Shen Siao, and Jing Chih Ciou. "Melioration of Pyroelectric Cells for Power Conversion." Advanced Materials Research 479-481 (February 2012): 2199–205. http://dx.doi.org/10.4028/www.scientific.net/amr.479-481.2199.

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Trenching PZT material in a thicker PZT pyroelectric cell to improve the temperature variation rate was proposed in this study to enhance the efficiency of thermal energy-harvesting conversion by pyroelectricity. A thicker pyroelectric cell is beneficial in generating electricity pyroelectrically, but it opposes rapid temperature variations. Therefore, the PZT sheet was fabricated to produce deeper trenches to cause lateral temperature gradients induced by the trenched electrode, enhancing the temperature variation rate under homogeneous heat irradiation. When the trenched electrode type with

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11

Banzhaf, Christian T., Michael Grieb, Achim Trautmann, Anton J. Bauer, and Lothar Frey. "Influence of Diverse Post-Trench Processes on the Electrical Performance of 4H-SiC MOS Structures." Materials Science Forum 778-780 (February 2014): 595–98. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.595.

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This paper focuses on the evaluation of subsequent process steps (post-trench processes, PTPs) after 4H silicon carbide (4H-SiC) trench etching with respect to the electrical performance of trenched gate metal oxide semiconductor field effect transistors (Trench-MOSFETs). Two different types of PTP were applied after 4H-SiC trench formation, a high temperature post-trench anneal (PTA) [1] and a sacrificial oxidation (SacOx) [2]. We found significantly improved electrical properties of Planar-MOS structures using a SacOx as PTP, prior to gate oxide deposition. Besides excellent quasi-static cap

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12

Wang, Wen, Jiahuan Cui, and Shaoxing Qu. "Effects of hole arrangement and trenched hole on multirow film cooling." AIP Advances 12, no. 4 (2022): 045205. http://dx.doi.org/10.1063/5.0082980.

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Multirow film cooling is an advanced cooling method to provide effective surface cooling for gas turbine components exposed to high temperature. In this paper, the performance of multirow film cooling under different configurations is investigated numerically. The geometrical parameters, including the hole arrangement, hole orientation, and trenched hole, are considered. The numerical setup is validated before the performances of different cooling configurations are compared. The flow and heat transfer characteristics of the various cooling configurations are analyzed, and the different row-to

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13

Qadir, Akeel, Munir Ali, Afshan Khaliq, et al. "Humidity Sensing in Graphene-Trenched Silicon Junctions via Schottky Barrier Modulation." Nanomaterials 15, no. 13 (2025): 985. https://doi.org/10.3390/nano15130985.

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In this study, we develop a graphene-trenched silicon Schottky junction for humidity sensing. This novel structure comprises suspended graphene bridging etched trenches on a silicon substrate, creating both free-standing and substrate-contacting regions of graphene that enhance water adsorption sensing. Suspended graphene is intrinsically insensitive to water adsorption, making it difficult for adsorbed H2O to effectively dope the graphene. In contrast, when graphene is supported on the silicon substrate, water molecules can effectively dope the graphene by modifying the silicon’s impurity ban

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14

Jeong, Jee-Hun, Ju-Hong Cha, Goon-Ho Kim, Sung-Hwan Cho, and Ho-Jun Lee. "Study of a SiC Trench MOSFET Edge-Termination Structure with a Bottom Protection Well for a High Breakdown Voltage." Applied Sciences 10, no. 3 (2020): 753. http://dx.doi.org/10.3390/app10030753.

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A novel edge-termination structure for a SiC trench metal–oxide semiconductor field-effect transistor (MOSFET) power device is proposed. The key feature of the proposed structure is a periodically formed SiC trench with a bottom protection well (BPW) implantation region. The trench can be filled with oxide or gate materials. Indeed, it has almost the same cross-sectional structure as the active region of a SiC trench MOSFET. Therefore, there is little or no additional process loads. A conventional floating field ring (FFR) structure utilizes the spreading of the electric field in the periodica

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15

Asgarihajifirouz, Mozhgan, Xiaoyu Dong, and Hodjat Shiri. "Assessment of the Response of Trenched–Backfilled Pipelines to Strike-Slip Faults: An Analytical Approach." Geosciences 13, no. 2 (2023): 47. http://dx.doi.org/10.3390/geosciences13020047.

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Trenched pipelines may experience significant lateral displacement due to natural geohazards such as strike slip-fault movements, landslides, etc. Using pre-excavated soil to backfill trenches is a cost-effective option to protect pipelines against large deformations. These backfilling materials are heavily remolded and therefore softer than the native ground. Therefore, the shear strength difference between the backfill and native ground may affect the pipeline–backfill–trench interaction and the failure mechanism of the surrounding soil. By assuming a simplified uniform soil domain, the infl

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16

Miller, Fredric, and Dan Neely. "The Effect of Trenching on Growth and Plant Health of Selected Species of Shade Trees." Arboriculture & Urban Forestry 19, no. 4 (1993): 226–29. http://dx.doi.org/10.48044/jauf.1993.036.

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New telephone lines were installed in trenches throughout the campus of the University of Illinois at Urbana- Champaign in the spring of 1987. The trenches were in close proximity to tree trunks. Annual growth and mortality data were taken on Celtis occidentalis, Liquidambar styraciflua, Acer saccharum and Gleditsia triacanthos through 1991. Only 7 of 98 trees died during the trial period. Trenching distances of 0.5 to 3.3 m did not predispose the trees to readily evident disease or insect infestations. Only on Celtis was there statistically different growth between trenched and control trees

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Karpinski, Eva C. "En-trenched Manhood." Men and Masculinities 10, no. 5 (2007): 523–37. http://dx.doi.org/10.1177/1097184x06291902.

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18

van den Berg, M., K. Vanneste, B. Dost, A. Lokhorst, M. van Eijk, and K. Verbeeck. "Paleoseismic investigations along the Peel Boundary Fault: geological setting, site selection and trenching results." Netherlands Journal of Geosciences - Geologie en Mijnbouw 81, no. 1 (2002): 39–60. http://dx.doi.org/10.1017/s0016774600020552.

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AbstractOn the basis of a multidisciplinary approach we have unraveled the palaeo-earthquake history of a trenched section across the Peel Boundary Fault. The area shows at present one of the largest contrasts in relative motion on both sides of the fault on the basis of repeated levelling. The geological record for the last 25 thousand years, recovered in the trench, shows evidence of two heavy earthquakes (moment magnitude between 6.0 and 6.6), that occurred in a relatively short timespan around 15 thousands years ago. A third less severe event occurred somewhere in the mid Holocene. The tim

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Nazirah Mohd Razali, Hafizal Yahaya, Muhammad Quisar Lokman, Siti Nur Fatin Zuikafly, and Fauzan Ahmad. "Simulation of Trenched Coreless Silica Fiber Sensor for Refractive Index Measurement." Journal of Advanced Research in Applied Sciences and Engineering Technology 32, no. 1 (2023): 87–94. http://dx.doi.org/10.37934/araset.32.1.8794.

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Coreless silica fiber has garnered a lot of attention in the field of sensors. Nevertheless, the limitation of conventional and unique coreless silica fiber sensors such as complex simulation, and high fragility of its physical structure needs to be considered. This work presents a simulation of a new coreless silica fiber design in a form of a trenched coreless silica fiber sensor to overcome these limitations. To optimize the sensor’s design, the trench depth was changed in the range of 0 μm to 50 µm at a fixed trench width of 50 μm. The change in analyte refractive index ranging from 1.3000

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20

Ye, Jixing, Angelo Loi, Adriano Lai, and Gian-Franco Dalla Betta. "Design and simulation of modified 3D-trench electrode sensors." Journal of Instrumentation 18, no. 11 (2023): C11021. http://dx.doi.org/10.1088/1748-0221/18/11/c11021.

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Abstract Future experiments at high-luminosity hadron colliders will involve unprecedent levels of pile up, calling for ultrafast detectors in order to add time information to distinguish between particle tracks. The unique geometry of 3D sensors enables to achieve very good timing performance, with the additional benefit of high radiation hardness. Remarkable results in terms of temporal resolution have been reported for 3D sensors with columnar electrodes (∼30 ps) and even better with trenched electrodes (∼10 ps), because of a more uniform distribution of the electric field and weighting fie

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21

Doyle, P. F. "Performance of alternative methods of bank protection." Canadian Journal of Civil Engineering 19, no. 6 (1992): 1049–61. http://dx.doi.org/10.1139/l92-125.

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The durability of several common bank protection methods used as less expensive or environmentally acceptable alternatives to toe-trenched angular rock riprap has been documented during the 1980s at seven typical bank erosion sites in British Columbia. Since the sites were uncontrolled examples of actual river training works in operation, natural events hindered a precise comparison of each scheme with toe-trenched angular rock riprap protection. However, of the four alternatives investigated – gravel dykes, tree revetments, riprap with toe apron, and semi-round riprap – all but semi-round rip

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McCullough, Deborah G., and Michael R. Wagner. "Evaluation of four techniques to assess vigor of water-stressed ponderosa pine." Canadian Journal of Forest Research 17, no. 2 (1987): 138–45. http://dx.doi.org/10.1139/x87-025.

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Four techniques of vigor estimation were evaluated on root-trenched, watered, and untreated ponderosa pine (Pinusponderosa Doug, ex Laws.) in northern Arizona. Trenching and watering were initiated in August 1983. Vigor measurements were taken in summer and fall of 1983 and 1984 and summer of 1985. Correlations among the four vigor indices as well as tree age, diameter, and height were developed for each measurement period. Trenched trees consistently had higher moisture stress readings (based on the Scholander pressure chamber) than watered trees. The ability to measure differences in xylem w

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Kianpour, Ehsan, and Nor Azwadi Che Sidik. "Cooling holes with different structures effects on coolant cross flow and heat transfer at the outlet of the combustion chamber." Journal of Mechanical and Energy Engineering 5, no. 2 (2021): 141–48. http://dx.doi.org/10.30464/10.30464/jmee.2021.5.2.141.

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Abstract: The major effects of cylindrical and row trenched cooling holes with angles of alpha=30, beta=0, alpha=40, beta=0 and alpha=50, beta=0 at BR=3.18 on the effectiveness of film cooling near the combustor end wall surface is an important subject to study in detail. In the current study, researchers used a FLUENT package 16/11 to simulate a 3-D model of a Pratt and Whitney gas turbine engine. In this research, RNG turbulence model K-ε model was used to analyze the flow behavior on the passage ways of internal cooling. In the combustor simulator, the dilution jets and cooling flow stagger

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Wang, Xi, Hong Bin Pu, Ji Chao Hu, and Bing Liu. "SiC Trenched Schottky Diode with Step-Shaped Junction Barrier for Superior Static Performance and Large Design Window." Materials Science Forum 1014 (November 2020): 62–67. http://dx.doi.org/10.4028/www.scientific.net/msf.1014.62.

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A novel silicon carbide (SiC) trenched schottky diode with step-shaped junction barrier is proposed for superior static performance and large design window. In the proposed diode, to improve tradeoff between specific on-resistance and surface peak electric field, the shape of the trenched-junction is modified to stair-step, without extra fabrication process. To investigate the performances of the SiC step-shaped trenched junction barrier schottky (SSTJBS) diode, numerical simulations are carried out through Silvaco TCAD. The results indicate that the proposed diode can accommodate highly doped

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Akansha, Ephraim* Neelesh Agrawal Anil Kumar A.K. Jaiswal. "STUDY OF ELECTRICAL CHARACTERISTIC OF NEW P-TYPE TRENCHED UMOSFET." Global Journal of Engineering Science and Research Management 4, no. 8 (2017): 20–25. https://doi.org/10.5281/zenodo.841194.

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In this paper p-type trenched UMOSFET was designed without super junction and constructed like any other conventional MOSFET. Characteristic curve was studied between drain current verses drain voltage and drain current verses gate voltage. The trench was designed under TCAD simulation tool Silvaco software using etching process. The specific channel length of the p-type UMOSFET has been concentrated as 0.9 microns. The device structures are designed using Silvaco Athena and characteristics were examined using Silvaco Atlas.

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Banzhaf, Christian T., Michael Grieb, Achim Trautmann, Anton J. Bauer, and Lothar Frey. "Characterization of Diverse Gate Oxides on 4H-SiC 3D Trench-MOS Structures." Materials Science Forum 740-742 (January 2013): 691–94. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.691.

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This study focuses on the characterization of silicon dioxide (SiO2) layers, either thermally grown or deposited on trenched 100 mm 4H-silicon carbide (SiC) wafers. We evaluate the electrical properties of silicon dioxide as a gate oxide (GOX) for 3D metal oxide semiconductor (MOS) devices, such as Trench-MOSFETs. Interface state densities (DIT) of 1*1011cm-2eV-1under flat band conditions were determined using the hi-lo CV-method [1]. Furthermore, current-electric field strength (IE) measurements have been performed and are discussed. Trench-MOS structures exhibited dielectric breakdown field

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Bender, David A., and Frank J. Dainello. "A MOISTURE CAPTURE SYSTEM FOR REDUCING SUPPLEMENTAL WATER REQUIREMENTS FOR CANTALOUPE PRODUCTION IN SEMI-ARID REGIONS." HortScience 27, no. 6 (1992): 587b—587. http://dx.doi.org/10.21273/hortsci.27.6.587b.

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Trenched beds covered with plastic mulch was used to capture and retain precipitation for dryland cantaloupe production. Two trenches were formed in the fall in raised beds. Plastic mulch was laid over the beds and slitted at ca. 1 meter intervals over the trenches. Soil was placed over the slits, conforming the plastic to the shape of the trenches and channeling precipitation into the beds. Cantaloupes were seeded in the spring and grown with no supplemental irrigation. Planting moisture was significantly greater under the capture system than in unmulched beds. Seedling emergence time was red

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Heikal, A. M., M. F. O. Hameed, and S. S. A. Obayya. "Improved Trenched Channel Plasmonic Waveguide." Journal of Lightwave Technology 31, no. 13 (2013): 2184–91. http://dx.doi.org/10.1109/jlt.2013.2264826.

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Hart, Stephen C., and Phil Sollins. "Soil carbon and nitrogen pools and processes in an old-growth conifer forest 13 years after trenching." Canadian Journal of Forest Research 28, no. 8 (1998): 1261–65. http://dx.doi.org/10.1139/x98-101.

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We measured surface soil (0-15cm) C and N pools and processes inside and outside an area that had been trenched 13 years earlier in an old-growth conifer forest (>450 years) to assess the long-term impacts of reduced root inputs on C and N turnover. Trenching, combined with frequent clipping of understory plants, was originally conducted to prevent nutrient uptake by plants, as part of a study of the role of vegetation in ecosystem retention of N. Thirteen years following trenching, the median values of bulk density, pH, total C and N concentrations, annual rates of in situ net N mineraliza

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Sadler, Peter M. "Models of time-averaging as a maturation process: How soon do sedimentary sections escape reworking?" Short Courses in Paleontology 6 (1993): 188–209. http://dx.doi.org/10.1017/s2475263000001112.

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Holocene sediments are the traditional classroom for learning to recognize the geologic record of different environments. Box cores and shallow trenches display sedimentary stratification and assemblages of organic remains together with their relationship to active surface processes and living organisms. Sedimentologists see the origin of particular bed-forms; paleoecologists learn to match animals to trace fossils, for example; and stratigraphers are reminded that it is not just the sediment surface that is active. Shells, bones, and sediment grains below the surface are still subject to rear

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Gonzalez, C., and J. P. McVittie. "A study of trenched capacitor structures." IEEE Electron Device Letters 6, no. 5 (1985): 215–18. http://dx.doi.org/10.1109/edl.1985.26102.

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Gao, Pu-Xian, Jin Liu, Brent A. Buchine, Benjamin Weintraub, Z. L. Wang, and J. L. Lee. "Bridged ZnO nanowires across trenched electrodes." Applied Physics Letters 91, no. 14 (2007): 142108. http://dx.doi.org/10.1063/1.2794417.

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Zhang, Runsheng, Leping Zhou, Shaohua Han, et al. "Analysis of mist/air film cooling performance of trenched holes with shaped lips." Thermal Science, no. 00 (2022): 185. http://dx.doi.org/10.2298/tsci220801185z.

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Mist-assisted film cooling has exhibited great potential for efficient cooling of a turbine blade. Trench structures can significantly affect the film cooling performance of air, while their impact on the adhesion characteristics of the droplets and thus the mist-assisted film cooling performance is unclear. This work highlights the combination of these two aspects by exploring the improvement of the mist-assisted film cooling performance for trenched holes with shaped lips using three-dimensional computations. The results show that the upper lip structure plays a significant role in the adiab

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Vogel, Jason G., and David W. Valentine. "Small root exclusion collars provide reasonable estimates of root respiration when measured during the growing season of installation." Canadian Journal of Forest Research 35, no. 9 (2005): 2112–17. http://dx.doi.org/10.1139/x05-117.

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A common method to determine in situ root respiration is to insert root exclusions to sever roots and then to measure soil carbon dioxide (CO2) efflux in and outside the exclusion. We report the use of relatively small root exclusions (15.2 cm diameter plastic pipe) (SREs), installed and measured within a growing season. We switched from long-used, large root exclusions (2.5 m × 3 m) (LREs) for three reasons. First, temperature artifacts were apparent in LREs, likely because increased soil moisture altered soil thermal balance. Second, LREs in dense stands required a relatively low tree densit

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Staples, Thomas E., Ken CJ Van Rees, J. Diane Knight, and C. van Kessel. "Vegetation management and site preparation effects on 13C isotopic composition in planted white spruce." Canadian Journal of Forest Research 31, no. 6 (2001): 1093–97. http://dx.doi.org/10.1139/x01-023.

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Moisture availability is the factor that most commonly influences the discrimination against 13C fixation (Δ) by C3 plants. Therefore, by changing the availability of moisture by way of controlling competing vegetation, Δ in white spruce (Picea glauca (Moench) Voss) seedlings should be affected. The objective of this study was to determine the influence of manual brushing on Δ in white spruce seedlings planted in disc-trenched and control (i.e., no site preparation) microsites. The effects of site preparation and vegetation management on soil moisture, photosynthetically active radiation (PAR)

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Watson, Gary. "Tree Growth after Trenching and Compensatory Crown Pruning." Arboriculture & Urban Forestry 24, no. 1 (1998): 47–53. http://dx.doi.org/10.48044/jauf.1998.007.

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The roots of pin oak (Quercus palustris) trees were severed by trenching on 1, 2, or 3 sides the tree. The distance between the trunk and the trenches was approximately equal to the trunk circumference. Half of the trees also received compensatory crown pruning. All trees survived and significant dieback was noted only on trees that were trenched on 3 sides. Generally, the more extensive the trenching, the greater the growth reduction and dieback, and the longer the reduction persisted. Compensatory pruning increased twig growth for all trenching treatments, but seems to be most beneficial in

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Choi, Jin-Hyun, Chang-Mok Oh, and Jae-Won Jang. "Micro- and nano-patterns fabricated by embossed microscale stamp with trenched edges." RSC Advances 7, no. 51 (2017): 32058–64. http://dx.doi.org/10.1039/c7ra05262f.

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Aguilos, M., K. Takagi, N. Liang, et al. "Soil warming in a cool-temperate mixed forest with peat soil enhanced heterotrophic and basal respiration rates but <i>Q</i><sub>10</sub> remained unchanged." Biogeosciences Discussions 8, no. 4 (2011): 6415–45. http://dx.doi.org/10.5194/bgd-8-6415-2011.

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Abstract. We conducted soil warming experiment in a cool-temperate forest with peat soil in northern Japan, during the snowless seasons of 2007–2009. Our objective was to determine whether or not the heterotrophic respiration rate and the temperature sensitivity would change by soil warming. We elevated the soil temperature by 3 °C at 5 cm depth by means of overhead infrared heaters and continuously measured soil CO2 fluxes by using a fifteen-channel automated chamber system. Trenching treatment was also carried out to separate heterotrophic respiration and root respiration from the total soil

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Ross, Des J., Neal A. Scott, Kevin R. Tate, Natasha J. Rodda, and Jackie A. Townsend. "Root effects on soil carbon and nitrogen cycling in a Pinus radiata D. Don plantation on a coastal sand." Soil Research 39, no. 5 (2001): 1027. http://dx.doi.org/10.1071/sr00058.

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Although the contribution of roots to soil carbon (C) fluxes and biochemical processes is recognised, it is difficult to quantify. One approach to assess their importance is the use of trenched plots, in which C inputs to the soil and respiration by living roots has ceased. We give here an account of C and nitrogen (N) pools and mineralisation in samples taken 27 months after trenching in a 26-year-old Pinus radiata D. Don plantation on a coastal sand (an Aquic Udipsamment); above-ground litter inputs continued throughout the 27-month period.Moisture contents were higher in FH material and min

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Li, Yu Zhu, Petre Alexandrov, Jian Hui Zhang, Larry X. Li та Jian Hui Zhao. "10 kV, 87 mΩcm² Normally-Off 4H-SiC Vertical Junction Field-Effect Transistors". Materials Science Forum 527-529 (жовтень 2006): 1187–90. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1187.

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SiC JFET, compared with SiC MOSFET, is attractive for high power, high temperature applications because it is free of gate oxide reliability issues. Trenched-and-Implanted VJFET (TIVJFET) does not require epi-regrowth and is capable of high current density. In this work we demonstrate two trenched-and-implanted normally-off 4H-SiC vertical junction field-effect transistors (TI-VJFET), based on 120μm, 4.9×1014cm-3 and 100μm, 6×1014cm-3 drift layers. The corresponding devices showed blocking voltage (VB) of 11.1kV and specific on-resistance (RSP_ON) of 124m7cm2, and VB of 10kV and RSP_ON of 87m7

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Du, Jiyao, Taofei Pu, Xiaobo Li, Liuan Li, Jinping Ao, and Hongwei Gao. "Simulation of Normally-Off Vertical GaN MOSFET with a Novel Enhanced Sidewall Channel by Selective Area Growth." Micromachines 16, no. 1 (2025): 105. https://doi.org/10.3390/mi16010105.

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In the present study, a novel normally-off vertical GaN MOSFET with an enhanced AlGaN/GaN channel on the sidewall has been proposed using the technology computer-aided design (TCAD) simulation. By using the selective area growth process, the trench structure and the enhanced sidewall channel are formed simultaneously, which is beneficial to enhance the conduction capability compared with the conventional trenched MOSFET. It demonstrates that a proper hole concentration and thickness of the p-GaN layer are key parameters to balance the threshold voltage, on-state resistance, and off-state break

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Azwadi, Nor, and Ehsan Kianpour. "The Effect of Blowing Ratio on Film Cooling Effectiveness Using Cylindrical and Row Trenched Cooling Holes with Alignment Angle of 90 Degrees." Mathematical Problems in Engineering 2014 (2014): 1–9. http://dx.doi.org/10.1155/2014/470576.

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This paper presents the effects of blowing ratio on film cooling performance adjacent to the combustor endwall using cylindrical and row trenched cooling holes with alignment angle of 90 degrees. A three-dimensional representation of a Pratt and Whitney gas turbine engine was simulated and analysed using a commercial finite volume package FLUENT 6.2.26. The combustor simulator was designed to combine the interaction of two rows of dilution jets, which were staggered in the streamwise direction and aligned in the spanwise direction. As a result, the combustor with row trenched holes gave almost

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Han, C., J. Liu, and P. Yi. "Adaptivity of plate anchors to restrain the impact of seabed trenching." Géotechnique Letters 13, no. 1 (2023): 1–26. http://dx.doi.org/10.1680/jgele.21.00160.

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The seabed trenching due to chain-soil-water interaction in deepwater moorings is disadvantageous to the holding capacity of the anchor, which threatens the safety of the whole floating system. A measure is proposed in this study to restrain the adverse impact of seabed trenching by utilizing the diving potential of plate anchors. Model tests were conducted to verify the stability and further keying behaviour of the plate anchor in trenched seabed. Test results show that the plate anchor automatically dives deeper and hence develops higher resistance to balance the uplift load with the progres

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Tonosaki, M., E. Kato, M. Yajima, and Y. Takei. "3D surface modification of micro trenched structure." Vacuum 74, no. 3-4 (2004): 693–98. http://dx.doi.org/10.1016/j.vacuum.2004.01.066.

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Núñez-Elisea, Roberto, Bruce Schaffer, Mongi Zekri, Stephen K. O'Hair, and Jonathan H. Crane. "In Situ Soil-water Characteristic Curves for Tropical Fruit Orchards in Trenched Calcareous Soil." HortTechnology 11, no. 1 (2001): 65–69. http://dx.doi.org/10.21273/horttech.11.1.65.

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Most tropical fruit trees in southern Florida are grown in calcareous gravelly soil that is mechanically trenched to a depth of about 50 cm (about 20 inches). Fruit trees are often planted at the intersections of perpendicular trenches to provide space for root development. Tree root systems are concentrated in the top 10 to 20 cm (about 4 to 8 inches) of soil. Extreme soil rockiness has made it difficult to obtain consistent and reliable measurements of soil water status and to collect soil samples for constructing soil-water characteristic curves in the laboratory. Multisensor capacitance pr

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Demirel, Vedat, and Shen Wang. "Hydrodynamic Coefficients of a Floating Body over a Trenched Channel." International Shipbuilding Progress 37, no. 410 (1990): 199–215. https://doi.org/10.3233/isp-1990-3741005.

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Navigation of large ships over a dredged channel often experiences some unusual movements which do not commonly occur in an otherwise unrestricted waters. In particular, these distinctive and abrupt movements are more noticeable in the horizontal motions than in the vertical motions. This phenomenon, long been experienced by pilots navigating over dredged waterways, is indeed a hydrodynamic response of wave trapping inside the channel. For some particular matching of ship beam with the channel bank clearance, at some critical depth of the overbank, a ship may experience an unusual sharp increa

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Zhang, B., J. L. Tang, Ch Gao, and H. Zepp. "Subsurface lateral flow from hillslope and its contribution to nitrate loading in streams through an agricultural catchment during subtropical rainstorm events." Hydrology and Earth System Sciences 15, no. 10 (2011): 3153–70. http://dx.doi.org/10.5194/hess-15-3153-2011.

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Abstract. Subsurface lateral flow from agricultural hillslopes is often overlooked compared with overland flow and tile drain flow, partly due to the difficulties in monitoring and quantifying. The objectives of this study were to examine how subsurface lateral flow generated through soil pedons from cropped hillslopes and to quantify its contribution to nitrate loading in the streams through an agricultural catchment in the subtropical region of China. Profiles of soil water potential along hillslopes and stream hydro-chemographs in a trenched stream below a cropped hillslope and at the catch

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Tsagaraki, Katerina, Maher Nafouti, Herve Peyre, et al. "Cross-Section Doping Topography of 4H-SiC VJFETs by Various Techniques." Materials Science Forum 924 (June 2018): 653–56. http://dx.doi.org/10.4028/www.scientific.net/msf.924.653.

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Different methods for cross-section characterization of SiC Trenched-singly-implanted vertical junction field effect transistors (TSI-VJFETs) are presented with the purpose to determine the epitaxial structure in terms of doping topography.

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Wright, N., and B. Gebhart. "Enhanced Boiling on Microconfigured Surfaces." Journal of Electronic Packaging 111, no. 2 (1989): 112–20. http://dx.doi.org/10.1115/1.3226515.

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New results are presented for pool boiling from vertical, smooth and regularly microconfigured etched silicon surfaces, in saturated water at 1 atm. All specimens were 1.27 cm square and approximately 300 μm thick. The etched microstructures were hexagonal dimples and rectangular trenches. The dimples were 4.1 μm deep and 11.5 μm across, on 22 μm centers. The trenches were 51 μm deep, 12.6 μm wide and 101 μm long, with repeat distances of 22 and 110 μm, in the two directions. The surface densities of the microstructures were 2 × 105 per cm2 for the dimples and 0.4 × 105 per cm2 for the trenche

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Hou, Rui, Fengbo Wen, Tao Cui, Xiaolei Tang, and Songtao Wang. "Numerical investigation on the improved three-hole cooling unit with the trench." International Journal of Numerical Methods for Heat & Fluid Flow 29, no. 3 (2019): 890–914. http://dx.doi.org/10.1108/hff-06-2018-0344.

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Purpose This study aims to introduce a three-hole cooling unit to improve downstream cooling performance by jet interaction and coalescence at a lower manufacture cost. Design/methodology/approach A new three-hole cooling unit is proposed. Reynolds-averaged Navier–Stokes (RANS) simulation is performed in the present study. The CFD package ANSYS CFX is used to predict film-cooling effectiveness and flow fields. Findings The results show that, at pitch ratio P/D = 3, Case 4 configuration with a round hole upstream and two trenched holes downstream can obtain a high cooling performance at a lower

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