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Journal articles on the topic 'Tunnel diodes'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 July 2025

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1

Калиновский, В. С., Е. В. Контрош, Г. В. Климко та ін. "Разработка и исследование туннельных p-i-n-диодов GaAs/AlGaAs для многопереходных преобразователей мощного лазерного излучения". Физика и техника полупроводников 54, № 3 (2020): 285. http://dx.doi.org/10.21883/ftp.2020.03.49034.9298.

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Fabrication of connecting tunnel diodes with high peak tunnel current density exceeding the short-circuit current density of photoactive p−n junctions is an important task in development of multi-junction III−V photovoltaic converters of high-power optical radiation. Based on the results of a numerical simulation of tunnel diode current−voltage characteristics, a method is suggested for raising the peak tunnel current density by connecting a thin undoped i-type layer with thickness of several nanometers between the degenerate layers of a tunnel diode. The method of molecular-beam epitaxy was u

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2

BERGER, P. R., G. GULYAMOV, M. G. DADAMIRZAEV, M. K. UKTAMOVA, and S. R. BOIDEDAEV. "Influence of Microwave and Magnetic Fields on the Electrophysical Parameters of a Tunnel Diode." Romanian Journal of Physics 69, no. 3-4 (2024): 609. http://dx.doi.org/10.59277/romjphys.2024.69.609.

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In this paper, we studied the effect of an electromagnetic field of an ultrahigh frequency on the I–V characteristics of tunnel diodes. The influence of thermionic current on the change in the ratio of the values of tunnel currents at depth and the peak formed in the tunnel diode as a result of a strong electromagnetic field and on the change in the ratio of the values of tunnel currents at the highest and lowest points without exposure to a strong electromagnetic field. The I–V characteristics of a tunnel diode under the action of a microwave field is determined based on the theory of Knott a

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3

Moraru, Daniel. "Challenges and Progress in the Fabrication of Silicon Nanowire Tunnel Diodes." International Journal of Electrical, Computer, and Biomedical Engineering 1, no. 1 (2023): 57–65. http://dx.doi.org/10.62146/ijecbe.v1i1.23.

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Tunnel (Esaki) diodes prepared in silicon (Si) nanowires could provide a unique platform to investigate band-to-band tunneling (BTBT) transport in nanoscale. However, the successful fabrication of these devices poses substantial challenges, related to controlling high doping concentrations, maintaining the abruptness of the pn junction, and minimizing roughness due to nanoscale patterning. This paper comprehensively addresses these challenges, suggesting potential strategies for optimization. Additionally, examples of nanoscale diodes fabricated so far in silicon-on-insulator (SOI) substrates

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4

Amine, Abdelaziz, Yamina Mir, and Mimoun Zazoui. "Modelling of Dual-Junction Solar Cells including Tunnel Junction." Advances in Condensed Matter Physics 2013 (2013): 1–5. http://dx.doi.org/10.1155/2013/546362.

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Monolithically stacked multijunction solar cells based on III–V semiconductors materials are the state-of-art of approach for high efficiency photovoltaic energy conversion, in particular for space applications. The individual subcells of the multi-junction structure are interconnected via tunnel diodes which must be optically transparent and connect the component cells with a minimum electrical resistance. The quality of these diodes determines the output performance of the solar cell. The purpose of this work is to contribute to the investigation of the tunnel electrical resistance of such a

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5

Day, D. J., Y. Chung, C. Webb, J. N. Eckstein, J. M. Xu, and M. Sweeny. "Heterostructurep‐njunction tunnel diodes." Applied Physics Letters 57, no. 11 (1990): 1140–42. http://dx.doi.org/10.1063/1.103515.

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6

Sweeny, Mark, and Jingming Xu. "Resonant interband tunnel diodes." Applied Physics Letters 54, no. 6 (1989): 546–48. http://dx.doi.org/10.1063/1.100926.

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7

LIU, QINGMIN, SURAJIT SUTAR, and ALAN SEABAUGH. "TUNNEL DIODE/TRANSISTOR DIFFERENTIAL COMPARATOR." International Journal of High Speed Electronics and Systems 14, no. 03 (2004): 640–45. http://dx.doi.org/10.1142/s0129156404002600.

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A new tunnel diode/transistor circuit topology is reported, which both increases speed and reduces power in differential comparators. This circuit topology is of special interest for use in direct digital synthesis applications. The circuit topology can be extended to provide performance improvements in high speed logic and signal processing applications. The circuits are designed based on InP/GaAsSb double heterojunction bipolar transistors and AlAs/InGaAs/AlAs resonant tunneling diodes. A self-aligned and scalable fabrication approach using nitride sidewalls and chemical mechanical polishing

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8

Marteau, Baptiste, Thibaut Desrues, Quentin Rafhay, Anne Kaminski, and Sébastien Dubois. "Passivating Silicon Tunnel Diode for Perovskite on Silicon Nip Tandem Solar Cells." Energies 16, no. 11 (2023): 4346. http://dx.doi.org/10.3390/en16114346.

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Silicon solar cells featuring tunnel oxide passivated contacts (TOPCon) benefit from high efficiencies and low production costs and are on the verge of emerging as the new photovoltaic market mainstream technology. Their association with Perovskite cells in 2-terminal tandem devices enables efficiency breakthroughs while maintaining low fabrication costs. However, it requires the design of a highly specific interface to ensure both optical and electrical continuities between subcells. Here, we evaluated the potential of tunnel diodes as an alternative to ITO thin films, the reference for such

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9

Bercha, Artem, Mikołaj Chlipała, Mateusz Hajdel, et al. "Photoluminescence and Photocurrent from InGaN/GaN Diodes with Quantum Wells of Different Widths and Polarities." Nanomaterials 15, no. 2 (2025): 112. https://doi.org/10.3390/nano15020112.

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We compare the optical properties of four pin diode samples differing by built-in field direction and width of the In0.17Ga0.83N quantum well in the active layer: two diodes with standard nip layer sequences and 2.6 and 15 nm well widths and two diodes with inverted pin layer ordering (due to the tunnel junction grown before the pin structure) also with 2.6 and 15 nm widths. We study photoluminescence and photocurrent in those samples (as a function of excitation power and applied voltage), revealing very different properties due to the interplay of built-in fields and screening by injected ca

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10

Thompson, P. E., K. D. Hobart, M. E. Twigg, et al. "Epitaxial Si-based tunnel diodes." Thin Solid Films 380, no. 1-2 (2000): 145–50. http://dx.doi.org/10.1016/s0040-6090(00)01490-5.

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11

Zeng, Xulu, Gaute Otnes, Magnus Heurlin, Renato T. Mourão, and Magnus T. Borgström. "InP/GaInP nanowire tunnel diodes." Nano Research 11, no. 5 (2018): 2523–31. http://dx.doi.org/10.1007/s12274-017-1877-8.

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12

Dominic Merwin Xavier, Agnes Maneesha, Arnob Ghosh, Sheikh Ifatur Rahman, Andrew Allerman, Shamsul Arafin, and Siddharth Rajan. "Design and demonstration of efficient transparent 30% Al-content AlGaN interband tunnel junctions." Applied Physics Letters 122, no. 8 (2023): 081108. http://dx.doi.org/10.1063/5.0122919.

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Ultra-violet (UV) light emitting diodes operating at 339 nm using transparent interband tunnel junctions are reported. Tunneling-based ultraviolet light emitting diodes were grown by plasma-assisted molecular beam epitaxy on 30% Al-content AlGaN layers. A low tunnel junction voltage drop is obtained through the use of compositionally graded n and p-type layers in the tunnel junction, which enhance hole density and tunneling rates. The transparent tunnel junction-based UV LED reported here show a low voltage drop of 5.55 V at 20 A/cm2 and an on-wafer external quantum efficiency of 1.02% at 80 A

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13

Vaziri, S., M. Belete, E. Dentoni Litta, et al. "Bilayer insulator tunnel barriers for graphene-based vertical hot-electron transistors." Nanoscale 7, no. 30 (2015): 13096–104. http://dx.doi.org/10.1039/c5nr03002a.

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14

Demin, Gleb, and Anatoly Popkov. "Spin-torque quantization and microwave sensitivity of a nano-sized spin diode." EPJ Web of Conferences 185 (2018): 01020. http://dx.doi.org/10.1051/epjconf/201818501020.

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Rectification of microwave signal by the spin-torque diode is very promising for its practical applications in microwave imaging. This is due to a very high sensitivity of magnetic tunnel junction under the bias current, which was previously demonstrated in a number of works [1-3]. The decreasing of cross-sectional area of the spin-torque diode up to the nano-sized dimensions below 10 nm allows one to reach high sensitivity without any bias current. Transverse quantization of electron states in the magnetic nanowire based on nano-sized metallic spin valves and magnetic tunnel junctions can cre

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15

Golyak, Il S., A. N. Morozov, and M. A. Strokov. "Investigating Long-Term Electric Current Fluctuations in Electrolytic Cells and Tunnel Diodes." Herald of the Bauman Moscow State Technical University. Series Natural Sciences, no. 4 (103) (August 2022): 50–58. http://dx.doi.org/10.18698/1812-3368-2022-4-50-58.

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The paper presents long-term measurement results concerning the Kullback --- Leibler divergence variations for electric current fluctuations in electrolytic cells and relative dispersion variations for electric current fluctuations in tunnel diodes. It is possible to transition from investigating current fluctuations in electrolytic cells to measuring similar fluctuations in tunnel diodes due to the charge carrier mass in diodes being considerably lower than masses of electrolyte ions. This decrease in mass leads to an increase in the sensitivity of the experimental installation. We found that

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16

Lincoln, James. "Quantum tunneling experiments with tunnel diodes." Physics Teacher 59, no. 1 (2021): 76–77. http://dx.doi.org/10.1119/10.0003028.

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17

Yang, R. Q., M. Sweeny, D. Day, and J. M. Xu. "Interband tunneling in heterostructure tunnel diodes." IEEE Transactions on Electron Devices 38, no. 3 (1991): 442–46. http://dx.doi.org/10.1109/16.75152.

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18

Wallentin, Jesper, Johan M. Persson, Jakob B. Wagner, Lars Samuelson, Knut Deppert, and Magnus T. Borgström. "High-Performance Single Nanowire Tunnel Diodes." Nano Letters 10, no. 3 (2010): 974–79. http://dx.doi.org/10.1021/nl903941b.

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19

Day, D. J., Y. Chung, C. Webb, J. N. Eckstein, J. M. Xu, and M. Sweeny. "Double quantum well resonant tunnel diodes." Applied Physics Letters 57, no. 12 (1990): 1260–61. http://dx.doi.org/10.1063/1.103503.

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20

Bucamp, A., C. Coinon, S. Lepilliet, et al. "In-plane InGaAs/Ga(As)Sb nanowire based tunnel junctions grown by selective area molecular beam epitaxy." Nanotechnology 33, no. 14 (2022): 145201. http://dx.doi.org/10.1088/1361-6528/ac45c5.

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Abstract In-plane InGaAs/Ga(As)Sb heterojunction tunnel diodes are fabricated by selective area molecular beam epitaxy with two different architectures: either radial InGaAs core/Ga(As)Sb shell nanowires or axial InGaAs/GaSb heterojunctions. In the former case, we unveil the impact of strain relaxation and alloy composition fluctuations at the nanoscale on the tunneling properties of the diodes, whereas in the latter case we demonstrate that template assisted molecular beam epitaxy can be used to achieve a very precise control of tunnel diodes dimensions at the nanoscale with a scalable proces

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21

Rawal, Yaksh, Swaroop Ganguly, and Maryam Shojaei Baghini. "Fabrication and Characterization of New Ti-TiO2-Al and Ti-TiO2--Pt Tunnel Diodes." Active and Passive Electronic Components 2012 (2012): 1–6. http://dx.doi.org/10.1155/2012/694105.

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Remotely empowered wireless sensor networks use different energy resources including photovoltaic solar cells, wireless power transmission, and batteries. As another option the electromagnetic energy available in the ambient can be harvested to power these remote sensors. This is particularly valuable if it is desirable to harvest the ambient energy available in the wide range of electromagnetic spectrum. This has motivated the research for developing energy harvesting devices which can absorb this energy and produce a DC voltage. Rectenna, an antenna coupled with a rectifier, is the main comp

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22

Шенгуров, В. Г., Д. О. Филатов, С. А. Денисов, В. Ю. Чалков, Н. А. Алябина та А. В. Зайцев. "Туннельные диоды на базе эпитаксиальных структур n-=SUP=-+-=/SUP=--Ge/p-=SUP=-+-=/SUP=--Si(001), выращенных методом горячей проволоки". Физика и техника полупроводников 53, № 9 (2019): 1267. http://dx.doi.org/10.21883/ftp.2019.09.48136.19.

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Abstractn ^+-Ge/ p ^+-Si(001) epitaxial structures are grown by hot-wire chemical vapor deposition from GeH_4 at a low substrate temperature (~325°C). Prototype tunnel diodes allowing for monolithic integration into Si-based integrated circuits are formed based on these structures. Doping of the n ^+-Ge layers with a donor impurity (P) to a concentration of >1 × 10^19 cm^–3 is performed via the thermal decomposition of GaP. Distinct regions of the negative differential resistance are observed in the current–voltage characteristics of tunnel diodes.

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23

Gulyamov, G., M. G. Dadamirzayev, and M. K. Uktamova. "TYPE OF EXCESS CURRENT GENERATED IN TUNNEL DIODES AND BARRIER TRANSPARENCY COEFFICIENT (TRANSFER COEFFICIENT) IN DIFFERENT MODELS." SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS 3, no. 3 (2021): 27–33. http://dx.doi.org/10.37681/2181-1652-019-x-2021-3-5.

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In this work, the transparency coefficient of the barrier formed in a tunnel diode was investigated by adding it as a variable in the Tsu - Esaki model. Also, the excess current generated in the tunnel diode was analyzed with the Chynowez model, based on th e theory of Knott and Demass. Based on the Franz -Keldesh model for various values of the electric field, the current - voltage characteristic of the tunnel diode was obtained from the change in the excess current of the tunnel diode

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24

Kim, S. H., G. Markovich, S. Rezvani, S. H. Choi, K. L. Wang, and J. R. Heath. "Tunnel diodes fabricated from CdSe nanocrystal monolayers." Applied Physics Letters 74, no. 2 (1999): 317–19. http://dx.doi.org/10.1063/1.123035.

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25

Esser, R. H., K. D. Hobart, and F. J. Kub. "Direct Wafer Bonded Abrupt Junction Tunnel Diodes." Journal of The Electrochemical Society 151, no. 6 (2004): G387. http://dx.doi.org/10.1149/1.1731558.

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26

Beji, L., B. el Jani, P. Gibart, J. C. Portal, and P. Basmaji. "Hydrostatic pressure studies of GaAs tunnel diodes." Journal of Applied Physics 83, no. 10 (1998): 5573–75. http://dx.doi.org/10.1063/1.367394.

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27

Magno, R., A. S. Bracker, and B. R. Bennett. "Resonant interband tunnel diodes with AlGaSb barriers." Journal of Applied Physics 89, no. 10 (2001): 5791–93. http://dx.doi.org/10.1063/1.1365940.

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28

Sutar, Surajit, Qin Zhang, and Alan Seabaugh. "InAlAs/InGaAs Interband Tunnel Diodes for SRAM." IEEE Transactions on Electron Devices 57, no. 10 (2010): 2587–93. http://dx.doi.org/10.1109/ted.2010.2059611.

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29

Sellai, A., A. Zarea, M. S. Raven, et al. "Votage step response of resonant tunnel diodes." Superlattices and Microstructures 10, no. 1 (1991): 63–66. http://dx.doi.org/10.1016/0749-6036(91)90149-l.

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30

Konishi, Y., S. T. Allen, M. Reddy, M. J. W. Rodwell, R. P. Smith, and J. Liu. "AlAs/GaAs Schottky-collector resonant-tunnel-diodes." Solid-State Electronics 36, no. 12 (1993): 1673–76. http://dx.doi.org/10.1016/0038-1101(93)90212-9.

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31

Abuelma'atti, M. T., and A. R. Ali. "Modelling tunnel diodes for computer aided design." International Journal of Infrared and Millimeter Waves 14, no. 6 (1993): 1293–98. http://dx.doi.org/10.1007/bf02146257.

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32

Krishnamoorthy, Sriram, Digbijoy N. Nath, Fatih Akyol, Pil Sung Park, Michele Esposto, and Siddharth Rajan. "Polarization-engineered GaN/InGaN/GaN tunnel diodes." Applied Physics Letters 97, no. 20 (2010): 203502. http://dx.doi.org/10.1063/1.3517481.

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33

Wengler, M. J. "Submillimeter-wave detection with superconducting tunnel diodes." Proceedings of the IEEE 80, no. 11 (1992): 1810–26. http://dx.doi.org/10.1109/5.175257.

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34

Wilkinson, V. A., and M. J. Kelly. "Microwave tunnel diodes are not yet manufacturable." Superlattices and Microstructures 24, no. 4 (1998): 309–12. http://dx.doi.org/10.1006/spmi.1996.0212.

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35

Dong, Li-Li, Qi Lou, Peng Liu, and Wen-Hai Xu. "The Impact of LED Colour Rendering on Reaction Time of Human Eyes in Tunnel Interior Zone." Advances in Civil Engineering 2021 (August 26, 2021): 1–19. http://dx.doi.org/10.1155/2021/6987673.

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The long reaction time of human eyes will increase the probability of traffic accidents in tunnels which can be reduced by improving lighting conditions. In recent years, light-emitting diodes (LEDs) have replaced the traditional lighting source in a tunnel. Colour rendering index 2012 (CRI2012, a colour rendering evaluation index) is the most suitable evaluation method for colour rendering of LEDs. In order to study the impact of colour rendering of LEDs on the reaction time of human eyes, a driving simulation environment was designed. First, three CCTs (correlated colour temperatures), four

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36

Siekacz, Marcin, Grzegorz Muziol, Henryk Turski, et al. "Vertical Integration of Nitride Laser Diodes and Light Emitting Diodes by Tunnel Junctions." Electronics 9, no. 9 (2020): 1481. http://dx.doi.org/10.3390/electronics9091481.

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We demonstrate the applications of tunnel junctions (TJs) for new concepts of monolithic nitride-based multicolor light emitting diode (LED) and laser diode (LD) stacks. The presented structures were grown by plasma-assisted molecular beam epitaxy (PAMBE) on GaN bulk crystals. We demonstrate a stack of four LDs operated at pulse mode with emission wavelength of 453 nm. The output power of 1.1 W and high slope efficiency of 2.3 W/A is achieved for devices without dielectric mirrors. Atomically flat surface after the epitaxy of four LD stack and low dislocation density is measured as a result of

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37

PALENSKIS, VILIUS, JONAS MATUKAS, JUOZAS VYŠNIAUSKAS, et al. "ANALYSIS OF NOISE CHARACTERISTICS OF GaAs TUNNEL DIODES." Fluctuation and Noise Letters 12, no. 03 (2013): 1350014. http://dx.doi.org/10.1142/s0219477513500144.

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An analysis and investigation of noises of GaAs tunnel diodes, which abrupt p+-n+ profile was obtained by using amphoteric nature of silicon, were performed. The main scope of this work was to verify the concepts of the explanation of white noise characteristics on the ground of shot noise and on the ground of the Gupta theorem of thermal noise in resistive elements. The other scope was to investigate the peculiarities of low frequency noise in p+-n+ junctions formed by using amphoteric silicon nature.

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38

Seong-Ran Jeon, Myong Soo Cho, Min-A Yu, and Gye Mo Yang. "GaN-based light-emitting diodes using tunnel junctions." IEEE Journal of Selected Topics in Quantum Electronics 8, no. 4 (2002): 739–43. http://dx.doi.org/10.1109/jstqe.2002.800847.

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39

Cohen, G. M., D. Ritter, and C. Cytermann. "High peak tunnel current density Ga0.47In0.53As Esaki diodes." Electronics Letters 31, no. 17 (1995): 1511–12. http://dx.doi.org/10.1049/el:19950979.

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40

Slovick, Brian A., Jeffrey A. Bean, Peter M. Krenz, and Glenn D. Boreman. "Directional control of infrared antenna-coupled tunnel diodes." Optics Express 18, no. 20 (2010): 20960. http://dx.doi.org/10.1364/oe.18.020960.

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41

Magno, R., A. S. Bracker, B. R. Bennett, B. Z. Nosho, and L. J. Whitman. "Barrier roughness effects in resonant interband tunnel diodes." Journal of Applied Physics 90, no. 12 (2001): 6177–81. http://dx.doi.org/10.1063/1.1415539.

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42

Nag, B. R. "Characteristics of InAs/AlxGa1−xSb/InAs tunnel diodes." Solid-State Electronics 36, no. 3 (1993): 373–79. http://dx.doi.org/10.1016/0038-1101(93)90089-9.

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43

Balasubramanian, Krishna, John Wright, Orr Zohar, et al. "Epitaxial superconducting tunnel diodes for light detection applications." Optical Materials Express 10, no. 7 (2020): 1724. http://dx.doi.org/10.1364/ome.395919.

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44

Soliman, Fouad A. S. "Applications of super-regenerative circuits using tunnel diodes." Microelectronics Journal 27, no. 1 (1996): 1–9. http://dx.doi.org/10.1016/0026-2692(95)00007-0.

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45

Jandieri, K., S. D. Baranovskii, W. Stolz, and F. Gebhard. "Analytical theory for favorable defects in tunnel diodes." Journal of Applied Physics 104, no. 11 (2008): 114511. http://dx.doi.org/10.1063/1.2996109.

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46

Sarwar, A. T. M. Golam, Brelon J. May, Julia I. Deitz, Tyler J. Grassman, David W. McComb, and Roberto C. Myers. "Tunnel junction enhanced nanowire ultraviolet light emitting diodes." Applied Physics Letters 107, no. 10 (2015): 101103. http://dx.doi.org/10.1063/1.4930593.

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47

van de Roer, T. G., H. C. Heyker, J. J. M. Kwaspen, H. P. Joosten, and M. Henini. "Noise model for double barrier resonant tunnel diodes." Electronics Letters 27, no. 23 (1991): 2158. http://dx.doi.org/10.1049/el:19911336.

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48

Takeuchi, Tetsuya, Ghulam Hasnain, Scott Corzine, et al. "GaN-Based Light Emitting Diodes with Tunnel Junctions." Japanese Journal of Applied Physics 40, Part 2, No. 8B (2001): L861—L863. http://dx.doi.org/10.1143/jjap.40.l861.

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49

Wen, T. C., S. J. Chang, L. W. Wu, et al. "InGaN/GaN tunnel-injection blue light-emitting diodes." IEEE Transactions on Electron Devices 49, no. 6 (2002): 1093–95. http://dx.doi.org/10.1109/ted.2002.1003762.

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50

Mingqiang Bao and K. L. Wang. "Accurately measuring current-voltage characteristics of tunnel diodes." IEEE Transactions on Electron Devices 53, no. 10 (2006): 2564–68. http://dx.doi.org/10.1109/ted.2006.882281.

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