Relevant bibliographies by topics / Ultrathin oxides

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Ultrathin oxides'

Author: Grafiati
Published: 8 June 2024
Last updated: 31 July 2025

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Journal articles on the topic "Ultrathin oxides"

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Bec, Romulad B., Andrzej Jakubowsk, Lidia Łukasiak, and Michał Korwin-Pawłowski. "Challenges in ultrathin oxide layers formation." Journal of Telecommunications and Information Technology, no. 1 (March 30, 2001): 27–34. http://dx.doi.org/10.26636/jtit.2001.1.46.

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In near future silicon technology cannot do without ultrathin oxides, as it becomes clear from the Roadmap 2000. Formation, however, of such layers creates a lot of technical and technological problems. The aim of this paper is to present the technological methods that potentially can be used for formation of ultrathin oxide layers for next generations ICs. The methods are brie y described and their pros and cons are discussed.
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Taylor, Seth T., John Mardinly, and Michael A. O'Keefe. "HRTEM Image Simulations for the Study of Ultrathin Gate Oxides." Microscopy and Microanalysis 8, no. 5 (2002): 412–21. http://dx.doi.org/10.1017/s1431927602020123.

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We have performed high resolution transmission electron microscope (HRTEM) image simulations to qualitatively assess the visibility of various structural defects in ultrathin gate oxides of MOSFET devices, and to quantitatively examine the accuracy of HRTEM in performing gate oxide metrology. Structural models contained crystalline defects embedded in an amorphous 16-Å-thick gate oxide. Simulated images were calculated for structures viewed in cross section. Defect visibility was assessed as a function of specimen thickness and defect morphology, composition, size, and orientation. Defect morp
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Zhu, Jianhui, Jian Jiang, Wei Ai, et al. "Encapsulation of nanoscale metal oxides into an ultra-thin Ni matrix for superior Li-ion batteries: a versatile strategy." Nanoscale 6, no. 21 (2014): 12990–3000. http://dx.doi.org/10.1039/c4nr03661a.

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A versatile strategy of encapsulating nanoscale metal oxides into ultrathin Ni “armors” is proposed for superior anodes of LIBs. The hybrids of metal oxide@Ni show drastic improvements in the capacity retention, long-term cyclic stability and rate performance.
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Huang, Feng, W. J. Liu, J. F. Sullivan, J. A. Barnard, and M. L. Weaver. "Room-temperature oxidation of ultrathin TiB2 films." Journal of Materials Research 17, no. 4 (2002): 805–13. http://dx.doi.org/10.1557/jmr.2002.0118.

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Titanium diboride has been claimed as a very promising candidate material for protective applications in the magnetic recording. Its oxidation resistance at room temperature is a critical criterion in assessing this application potential. In this paper, the oxidation characteristics of ultrathin TiB2 thin films, such as overcoat erosion and oxide thickness, are investigated via a combination of x-ray reflectivity, x-ray photoelectron spectroscopy (XPS), and atomic force microscopy. It was found that a <2-h exposure to air at room temperature led to the formation of approximately 15-Å-thick,
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Morgen, P., A. Bahari, U. Robenhagen, et al. "Roads to ultrathin silicon oxides." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 23, no. 1 (2005): 201–7. http://dx.doi.org/10.1116/1.1842113.

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Wang, Kai, Bolong Huang, Weiyu Zhang, et al. "Ultrathin RuRh@(RuRh)O2 core@shell nanosheets as stable oxygen evolution electrocatalysts." Journal of Materials Chemistry A 8, no. 31 (2020): 15746–51. http://dx.doi.org/10.1039/d0ta03213a.

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We report a novel architecture of ultrathin RuRh@(RuRh)O<sub>2</sub> core/shell nanosheets with a core of ultrathin metallic RuRh nanosheets and a shell of (RuRh)O<sub>2</sub> oxides as a superb electrocatalyst toward the oxgen evolution reaction (OER), better than most of the state-of-the-art Ru-based or Ir-based electrocatalysts. Moreover, the RuRh@(RuRh)O<sub>2</sub> core/shell nanosheets exhibit good durability because the (RuRh)O<sub>2</sub> oxide shell protects the normally labile RuRh NS core against dissolution during the OER process.
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Lobinsky, A. A., and V. I. Popkov. "Ultrathin 2D nanosheets of transition metal (hydro)oxides as prospective materials for energy storage devices: A short review." Electrochemical Materials and Technologies 1, no. 1 (2022): 20221008. http://dx.doi.org/10.15826/elmattech.2022.1.008.

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The ultrathin two-dimensional (2D) transition metal oxides and hydroxides (TMO and TMH) nanosheets are attractive for creating high-performance energy storage devices due to a set of unique physical and chemical properties. Flat 2D structure of such materials provides a sufficient number of active adsorption centers, and the ultra-small thickness, on the order of several nanometers, provides fast charge transfer, which significantly improves electronic conductivity. This brief review summarizes recent progress in the synthesis of materials based on ultrathin 2D nanosheets for energy storage ap
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Rotondaro, A. L. Pacheco, R. T. Laaksonen, and S. P. Singh. "Impact of the Nitrogen Concentration of Sub-1.3 nm Gate Oxides on 65 nm Technology Transistor Parameters." Journal of Integrated Circuits and Systems 2, no. 2 (2007): 63–66. http://dx.doi.org/10.29292/jics.v2i2.265.

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The nitrogen concentration of ultrathin gate oxides (sub-1.3 nm) was varied in a wide range (from 13 % to 23 %). The threshold voltage and the channel carrier mobility of advanced 65 nm technology CMOSFET transistors fabricated with these oxides were analyzed. It was observed that increasing the nitrogen concentration in the gate oxide results in a negative shift of the threshold voltage for both NMOS and PMOS devices and a degradation of the hole mobility. It was also observed that pchannel transistors are more sensitive to the nitrogen concentration of the gate oxide than n-channel transisto
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Ting, D. Z. Y. "Tunneling characteristics of nonuniform ultrathin oxides." Applied Physics Letters 73, no. 19 (1998): 2769–71. http://dx.doi.org/10.1063/1.122585.

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Ting, D. Z. Y., Erik S. Daniel, and T. C. Mcgill. "Interface Roughness Effects in Ultra-Thin Tunneling Oxides." VLSI Design 8, no. 1-4 (1998): 47–51. http://dx.doi.org/10.1155/1998/23567.

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Advanced MOSFET for ULSI and novel silicon-based devices require the use of ultrathin tunneling oxides where non-uniformity is often present. We report on our theoretical study of how tunneling properties of ultra-thin oxides are affected by roughness at the silicon/oxide interface. The effect of rough interfacial topography is accounted for by using the Planar Supercell Stack Method (PSSM) which can accurately and efficiently compute scattering properties of 3D supercell structures. Our results indicate that while interface roughness effects can be substantial in the direct tunneling regime,
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Dissertations / Theses on the topic "Ultrathin oxides"

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Tolvaišienė, Sonata. "Transport of charge carriers in ultrathin films of manganese oxides." Doctoral thesis, Lithuanian Academic Libraries Network (LABT), 2009. http://vddb.library.lt/obj/LT-eLABa-0001:E.02~2009~D_20090218_143224-76401.

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The objective of this dissertation is to investigate lanthanum manganites, which exhibit colossal negative magnetoresistance and phase transitions from the paramagnetic state to the ferromagnetic state. The magnetoresistance and its ani-zotriopy of thin epitaxial manganite films at low (up to  0.5 T) magnetic fields, as well as effects induced by strong pulsed magnetic and electric fields were in-vestigated. It was demonstrated how it can be used in the development of magne-tic field sensors, short electric pulse forming devices and amplitude modulators. It was found that in the case of ultr
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Dragosavac, Marko. "Electron transport in ultrathin oxide silicon MOSFETs." Thesis, University of Cambridge, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.614808.

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Matharu, J. "Surface science of ultrathin metal oxide films." Thesis, University College London (University of London), 2011. http://discovery.ucl.ac.uk/1335900/.

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The properties of metal oxide surfaces are key to their diverse technological applications. However, the semiconducting nature of metal oxides presents a problem - many surface science techniques are electron based and thus require samples to be conducting. As such, bulk crystal studies of metal oxides by techniques such as photoemission spectroscopy (PES) and scanning tunneling microscopy (STM) are limited to reduced surfaces. Alternatively, thin films of a metal oxide can be synthesised on a suitable conducting substrate that mimic the bulk crystal surface whilst having sufficient conducting
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Wlodarczyk, Radoslaw Stanislaw. "Surface structure predictions and development of global exploration tools." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät, 2015. http://dx.doi.org/10.18452/17207.

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Diese Arbeit ist ein Beitrag zur theoretischen Chemie sowie zur Oberflächenchemie. Durch Kombination von computergestützten und experimentellen Untersuchungen wird die atomare Struktur von dünnen SiO2-Filmen auf Ru(0001)-Unterlagen, von eisendotierten SiO2-Filmen auf diesen Unterlagen und von H2O-Filmen auf MgO(001)-Oberflächen bestimmt. Die atomaren Strukturmodelle wurden entweder mit dem neu entworfenen und im Paket DoDo implementierten genetischen Algorithmus oder mittels auf Sachkenntnis gestützter Vermutungen erhalten. Die simulierten Eigenschaften der so erhaltenen Strukturen stimmen seh
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Grinter, D. C. "Surface studies of metal oxide catalysts and ultrathin films." Thesis, University College London (University of London), 2011. http://discovery.ucl.ac.uk/1334452/.

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This thesis examines two important metal oxide systems: ultrathin CeO2(111) films on Pt(111), and carboxylic acids on TiO2 surfaces, both of which are significant for future energy research. The structure and growth of ultrathin films of CeO2(111) supported on Pt(111) have been studied with Scanning Tunnelling Microscopy (STM), Low Energy Electron Diffraction (LEED) and Auger Electron Spectroscopy (AES). The ultrathin films were grown in a number of ways and their growth mechanism, electronic structure, and domain boundaries were investigated using STM and STS. Atomically resolved STM images (
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Bayat, Alireza [Verfasser]. "Composition and geometric structure of ultrathin oxide films / Alireza Bayat." Halle, 2018. http://d-nb.info/1175950572/34.

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Garza, Michelle. "Reactivity of Oxide Surfaces and Metal-Oxide Interfaces: Effects of Water Vapor Pressure on Ultrathin Aluminum Oxide Films, and Studies of Platinum Growth Modes on Ultrathin Oxide Films and Their Effects on Adhesion." Thesis, University of North Texas, 2004. https://digital.library.unt.edu/ark:/67531/metadc4517/.

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The reactivity of oxide surfaces and metal-oxide interfaces play an important role in many technological applications such as corrosion, heterogeneous catalysis, and microelectronics. The focus of this research was (1) understanding the effects of water vapor exposure of ultrathin aluminum oxide films under non-ultrahigh vacuum conditions (>10-9 Torr) and (2) characterization of Pt growth modes on ultrathin Ta silicate and silicon dioxide films and the effects of growth modes on adhesion of a Cu overlayer. These studies were conducted with X-ray photoelectron spectroscopy (XPS). Ni3Al(110)
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Varga, P., M. Schmid, S. Muto, et al. "Growth and structure of an ultrathin tin oxide film on Rh (111)." AIP Publishing, 2011. http://hdl.handle.net/2237/20826.

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Mihaychuk, James Gordon. "Nonlinear optical studies of multiphoton photoemission in silicon covered by ultrathin oxide films." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk2/tape15/PQDD_0013/NQ35250.pdf.

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Martynova, Yulia [Verfasser], and Reinhard [Akademischer Betreuer] Schomäcker. "CO oxidation on metal supported ultrathin oxide films / Yulia Martynova. Betreuer: Reinhard Schomäcker." Berlin : Universitätsbibliothek der Technischen Universität Berlin, 2013. http://d-nb.info/1035767384/34.

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Books on the topic "Ultrathin oxides"

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Ragnarsson, Lars-Åke. Ultrathin oxides in metal-oxide-silicon structures: Defects and characterization. Chalmers tekniska högsk., 1999.

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Pacchioni, Gianfranco, and Sergio Valeri, eds. Oxide Ultrathin Films. Wiley-VCH Verlag GmbH & Co. KGaA, 2011. http://dx.doi.org/10.1002/9783527640171.

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Frei, Heinz, and Daniel Esposito, eds. Ultrathin Oxide Layers for Solar and Electrocatalytic Systems. Royal Society of Chemistry, 2022. http://dx.doi.org/10.1039/9781839163708.

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Pacchioni, Gianfranco, and Sergio Valeri. Oxide Ultrathin Films: Science and Technology. Wiley-VCH Verlag GmbH, 2011.

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Pacchioni, Gianfranco, and Sergio Valeri. Oxide Ultrathin Films: Science and Technology. Wiley & Sons, Incorporated, John, 2012.

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Pacchioni, Gianfranco, and Sergio Valeri. Oxide Ultrathin Films: Science and Technology. Wiley & Sons, Limited, John, 2012.

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Pacchioni, Gianfranco, and Sergio Valeri. Oxide Ultrathin Films: Science and Technology. Wiley & Sons, Incorporated, John, 2012.

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Pacchioni, Gianfranco, and Sergio Valeri. Oxide Ultrathin Films: Science and Technology. Wiley & Sons, Incorporated, John, 2012.

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9

(Editor), D. A. King, and D. P. Woodruff (Editor), eds. Oxide Surfaces - The Chemical Physics of Solid Surfaces : Growth and Properties of Ultrathin Epitaxial Layers. Elsevier Science Pub Co, 1997.

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Frei, Heinz, and Daniel Esposito. Ultrathin Oxide Layers for Solar and Electrocatalytic Systems. Royal Society of Chemistry, The, 2022.

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Book chapters on the topic "Ultrathin oxides"

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Giordano, Livia, and Gianfranco Pacchioni. "Unusual Properties of Oxides and Other Insulators in the Ultrathin Limit." In Oxide Ultrathin Films. Wiley-VCH Verlag GmbH & Co. KGaA, 2012. http://dx.doi.org/10.1002/9783527640171.ch4.

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Luches, Paola, and Sergio D’Addato. "Reducible Oxides as Ultrathin Epitaxial Films." In Oxide Materials at the Two-Dimensional Limit. Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-28332-6_4.

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Palmstrom, A. F., and M. O. Reese. "Chapter 3. Ultrathin Oxides for Solar Cells." In Energy and Environment Series. Royal Society of Chemistry, 2022. http://dx.doi.org/10.1039/9781839163708-00027.

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Li, Qi, and H. S. Wang. "Strain and Magnetoresistance Anisotropy of PR0.7SR0.3MNO3 Ultrathin Films." In Nano-Crystalline and Thin Film Magnetic Oxides. Springer Netherlands, 1999. http://dx.doi.org/10.1007/978-94-011-4493-3_9.

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Akbari, Mohammad Karbalaei, and Serge Zhuiykov. "Self-Limiting Two-Dimensional Surface Oxides of Liquid Metals." In Ultrathin Two-Dimensional Semiconductors for Novel Electronic Applications. CRC Press, 2020. http://dx.doi.org/10.1201/9780429316784-3.

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Terashima, T., K. Shimura, Y. Bando, Y. Matsuda, A. Fujiyama, and S. Komiyama. "Ultrathin Films and Superlattices of High Temperature Superconducting Oxides." In Springer Proceedings in Physics. Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-642-77154-5_3.

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Hattori, Takeo. "Surface, Interface and Valence Band of Ultra-Thin Silicon Oxides." In Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices. Springer Netherlands, 1998. http://dx.doi.org/10.1007/978-94-011-5008-8_17.

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Hirose, M., W. Mizubayashi, K. Morino, M. Fukuda, and S. Miyazaki. "Tunneling Transport and Reliability Evaluation in Extremely Thin Gate Oxides." In Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices. Springer Netherlands, 1998. http://dx.doi.org/10.1007/978-94-011-5008-8_22.

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Meda, L., and G. F. Cerofolini. "Local Tunnel Emission Assisted by Inclusions Contained in Buried Oxides." In Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices. Springer Netherlands, 1998. http://dx.doi.org/10.1007/978-94-011-5008-8_37.

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Lu, Z. H. "Synchrotron and Conventional Photoemission Studies of Oxides and N20 Oxynitrides." In Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices. Springer Netherlands, 1998. http://dx.doi.org/10.1007/978-94-011-5008-8_4.

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Conference papers on the topic "Ultrathin oxides"

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Manzoor, Mufassal, Xia Kexin, Lulu Han, and Cunjun Ruan. "Polarization and Angle Insensitive Ultrathin Wideband Metamaterial Absorber Based on Indium-Tin-Oxide." In 2024 Cross Strait Radio Science and Wireless Technology Conference (CSRSWTC). IEEE, 2024. https://doi.org/10.1109/csrswtc64338.2024.10811522.

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Jana, Koustav, Shuhan Liu, Kasidit Toprasertpong, et al. "Modeling and Understanding Threshold Voltage and Subthreshold Swing in Ultrathin Channel Oxide Semiconductor Transistors." In 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). IEEE, 2024. http://dx.doi.org/10.1109/sispad62626.2024.10733331.

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Advincula, Rigoberto C. "Graphene Based Nanomaterials for Biomedical Coatings." In CORROSION 2017. NACE International, 2017. https://doi.org/10.5006/c2017-09584.

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Abstract Nanotechnology involves scale, function, and composition that enable macroscopic properties with improved performance and high-value adding for any industry including the biomedical industry. The use of graphene-based nanomaterials is of high interest for electronic applications and the solid-state display industry. However, it is not as well known in the biomedical and bio-implant field. The graphene and the oxidized graphene oxide GO nanomaterials can be prepared by plasma, vacuum deposition, solid state catalytic methods, and also by solution exfoliation methods. This paper highlig
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Hirose, M., W. Mizubayashi, M. Fukuda, and S. Miyazaki. "Characterization of ultrathin gate oxides for advanced MOSFETs." In CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY. ASCE, 1998. http://dx.doi.org/10.1063/1.56852.

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Mizubayashi, Wataru, Hiroshi Itokawa, Seiichi Miyazaki, and Masataka Hirose. "Modeling of Soft Breakdown in Ultrathin Gate Oxides." In 1999 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1999. http://dx.doi.org/10.7567/ssdm.1999.a-10-2.

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Mizubayashi, W., Y. Yoshida, M. Narasaki, S. Miyazaki, and M. Hirose. "Temperature-Dependent Soft Breakdown in Ultrathin Gate Oxides." In 2000 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2000. http://dx.doi.org/10.7567/ssdm.2000.b-6-3.

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Lin, H. C., M. F. Wang, C. C. Chen, et al. "Characterization of plasma charging damage in ultrathin gate oxides." In 1998 IEEE International Reliability Physics Symposium Proceedings 36th Annual. IEEE, 1998. http://dx.doi.org/10.1109/relphy.1998.670662.

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Joshi, Atul B., G. Q. Lo, J. Ahn, Windsor Ting, and Dim-Lee Kwong. "Chemically modified ultrathin oxides fabricated by rapid thermal processing." In Rapid thermal and Integrated Processing, edited by Mehrdad M. Moslehi, Rajendra Singh, and Dim-Lee Kwong. SPIE, 1992. http://dx.doi.org/10.1117/12.56674.

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Moon, Dae Won, Hyun Kyong Kim, Hwack Joo Lee, Yong Jai Cho, and Hyun Mo Cho. "Thickness evaluation of ultrathin gate oxides at the limit." In CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY. ASCE, 1998. http://dx.doi.org/10.1063/1.56794.

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Hattangady, Sunil, D. T. Grider, Robert Kraft, et al. "Remote plasma nitrided oxides for ultrathin gate dielectric applications." In Microelectronic Manufacturing, edited by David Burnett, Dirk Wristers, and Toshiaki Tsuchiya. SPIE, 1998. http://dx.doi.org/10.1117/12.323956.

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Reports on the topic "Ultrathin oxides"

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Ludeke, R. Spatially Resolved Transport Studies and Microscopy of Ultrathin Metal-Oxide-Semiconductor Structures. Defense Technical Information Center, 1997. http://dx.doi.org/10.21236/ada329531.

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