Relevant bibliographies by topics / ZnO based Schottky Thin film devices

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  2. Dissertations / Theses
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  4. Conference papers

Academic literature on the topic 'ZnO based Schottky Thin film devices'

Author: Grafiati
Published: 6 September 2023
Last updated: 31 July 2025

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Journal articles on the topic "ZnO based Schottky Thin film devices"

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R. Sabity, Mowj, and Ghusoon M. Ali. "PERFORMANCE ANALYSIS OF PD/ZNO BASED FLEXIBLE UV MSM PHOTODETECTORS." Journal of Engineering and Sustainable Development 26, no. 5 (2022): 98–104. http://dx.doi.org/10.31272/jeasd.26.5.9.

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Flexible electronics and optoelectronics devices attract further attention in recent years. In this paper, we present the fabrication and photodetection properties of a flexible metal-semiconductor-metal UV photodetector based on a thin ZnO film with Pd Schottky electrodes. The active ZnO layer was created using a hydrothermal method on ITO/PET flexible substrates. Palladium employed as back-to-back Schottky contacts. Metal masks are designed and used to deposit palladium via thermal evaporation. To demonstrate the impact of ZnO on flexible substrates, the structural, optical, and electrical c
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Zhang, Teng-Fei, Guo-An Wu, Jiu-Zhen Wang, et al. "A sensitive ultraviolet light photodiode based on graphene-on-zinc oxide Schottky junction." Nanophotonics 6, no. 5 (2016): 1073–81. http://dx.doi.org/10.1515/nanoph-2016-0143.

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AbstractIn this study, we present a simple ultraviolet (UV) light photodiode by transferring a layer of graphene film on single-crystal ZnO substrate. The as-fabricated heterojunction exhibited typical rectifying behavior, with a Schottky barrier height of 0.623 eV. Further optoelectronic characterization revealed that the graphene-ZnO Schottky junction photodiode displayed obvious sensitivity to 365-nm light illumination with good reproducibility. The responsivity and photoconductive gain were estimated to be 3×104 A/W and 105, respectively, which were much higher than other ZnO nanostructure
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Zhang, Zhi Kun, Ji Ming Bian, and Xiao Qiang Kou. "A Novel ZnO-Based Graphite-Insulator-Semiconductor Diode for Transferable Unipolar Electronic Devices." Advanced Materials Research 710 (June 2013): 29–32. http://dx.doi.org/10.4028/www.scientific.net/amr.710.29.

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In this paper, a novel ZnO-based graphite-insulator-semiconductor (GIS) diode was fabricated on graphite substrate by radio frequency (rf) magnetron sputtering. A SiO2 thin film was used as the insulator layer grown by electron beam evaporation technique. The measurement of current-voltage of the ZnO-based GIS diode showed a Schottky rectifying diode characteristic with a threshold voltage of 5.2 V and a poor leakage current of ~10-3 A under a reverse bias condition. An interesting negative capacitance phenomenon was also observed from the GIS diode. The successful fabrication of ZnO-based GIS
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Shen, Mei, Triratna P. Muneshwar, Ken Cadien, Ying Y. Tsui, and Doug Barlage. "Optimization of Copper Schottky Contacts on Nanocrystalline ZnO thin films by Atomic Layer Deposition." MRS Advances 1, no. 50 (2016): 3421–27. http://dx.doi.org/10.1557/adv.2016.357.

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ABSTRACTContact metallization is an essential obstacle for utilizing low temperature achievable polycrystalline ZnO in any discrete devices and integrated circuits. To develop ZnO based semiconductor devices with advanced feature of flexibility, transparency and compatibility with low temperature processing, rectifying junctions must be fully developed. In this work, nanoscale polycrystalline ZnO thin films are fabricated with via low temperature (<200 °C) by atomic layer deposition (ALD). A vertical structure of bottom Schottky metallized diode is developed with copper (Cu) sputtered i
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Zafar, Mubeen, Muhammad Naeem Awais, Muhammad Asif, Amir Razaq, and Gul Amin. "Fabrication and characterization of piezoelectric nanogenerator based on Al/ZnO/Au structure." Microelectronics International 34, no. 1 (2017): 35–39. http://dx.doi.org/10.1108/mi-11-2015-0092.

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Purpose The purpose of this research work is to harvest energy using the piezoelectric properties of ZnO nanowires (NW). Fabrication and characterization of the piezoelectric nanogenerator (NG), based on Al/ZnO/Au structure without using hosting layer, were done to harvest energy. The proposed method has full potential to harvest the cost-effective energy. Design/methodology/approach ZnO NW were fabricated between the thin layers of Al- and Au-coated substrates for the development of piezoelectric NG. To grow ZnO NW, ZnO seed layer was prepared on the Al-coated substrate, and then ZnO NW were
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Zhao, Shuaitongze, and Shifeng Xu. "Semiconductor Photoanode Photoelectric Properties of Methanol Fuel Cells." Journal of Nanoelectronics and Optoelectronics 16, no. 1 (2021): 72–79. http://dx.doi.org/10.1166/jno.2021.2906.

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One-dimensional TiO2, ZnO, and Fe2O3 nanorod arrays are selected as the photocatalytic methanol fuel cell photoanodes, and a greenhouse catalytic methanol fuel cell device is designed. With the photo-generated holes' participation in fuel molecules' oxidation in the semiconductor electrode, chemical energy is converted into electric energy. Firstly, with pot-doped tin dioxide (TRS) as the substrate, TiO2, ZnO, and Fe2O3 nanorod arrays are prepared by hydrothermal method. TiO2 and ZnO are excellent photoelectric catalytic materials with similar energy band capability and strong separation capab
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Aghassi-Hagmann, Jasmin. "(Invited) Solution-Processable Materials and Structuring Processes for Electrochemically Gated Thin Film Devices." ECS Meeting Abstracts MA2024-01, no. 31 (2024): 1545. http://dx.doi.org/10.1149/ma2024-01311545mtgabs.

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Printed and flexible electronics enable interesting novel applications in the fields of sensors [1], bioelectronics [2], and security applications [3]. Most of them gain their functionality from a layered structure composed of different materials that interact with each other. For semiconducting layers, organic and inorganic materials can be used; in this regard, the respective functional materials need to be formulated into inks that are then printed on various substrates. The structuring process of printing is a complex process in which many chemical and physical process parameters need to b
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Shen, Mei, Amir Afshar, Manisha Gupta, et al. "Electrical Characteristics of TiW/ZnO Schottky contact with ALD and PLD." MRS Proceedings 1635 (2014): 127–32. http://dx.doi.org/10.1557/opl.2014.49.

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ABSTRACTAn electrical and analytical study was carried out to investigate TiW/ZnO Schottky contacts with 30 nm ZnO thin film layers deposited by pulsed laser deposition (PLD), plasma enhanced atomic layer deposition (PEALD), and thermal atomic layer deposition (TALD). Devices with ZnO layer deposited by TALD exhibit approximately linear behavior in their I-V measurements. However, both devices with ZnO layers deposited by PEALD and PLD behaved like Schottky rectifiers with barrier heights between TiW and ZnO of 0.51 eV and 0.45 eV respectively and ideality factors of 2.0 and 2.3 respectively.
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Jiang, Dayong, Jiying Zhang, Youming Lu, et al. "Ultraviolet Schottky detector based on epitaxial ZnO thin film." Solid-State Electronics 52, no. 5 (2008): 679–82. http://dx.doi.org/10.1016/j.sse.2007.10.040.

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Ginting, M., and J. D. Leslie. "Preparation and electrical properties of heterojunctions of ZnO on Zn3P2 and CdTe." Canadian Journal of Physics 67, no. 4 (1989): 448–55. http://dx.doi.org/10.1139/p89-080.

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"Heterojunctions" have been fabricated by the reactive evaporation of thin film n-type ZnO onto p-type single crystal Zn3P2, polycrystalline films of Zn3P2, and single crystal CdTe. The photovoltaic response of the n-ZnO – single crystal p-CdTe devices was good, that of the n-ZnO – single crystal p-Zn3P2 devices was poor, and that of the n-ZnO – p-Zn3P2 polycrystalline film devices was nonexistent. The ideality factor n of all devices studied was greater than two. On the basis of 1/C2 vs. V results, the n-ZnO – single crystal p-Zn3P2 devices behaved most like Schottky barrier devices, whereas
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Dissertations / Theses on the topic "ZnO based Schottky Thin film devices"

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Zhang, Jiawei. "Oxide-semiconductor-based thin-film electronic devices." Thesis, University of Manchester, 2016. https://www.research.manchester.ac.uk/portal/en/theses/oxidesemiconductorbased-thinfilm-electronic-devices(c8cde776-b68b-47b5-ab63-382a86dbb94b).html.

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Oxide semiconductors have been envisaged to find applications in ubiquitous flexible electronics in daily life such as wearable electronic gadgets to offer novel user experiences. However, one of the bottlenecks to realise these applications is a lack of oxide-semiconductor components capable of wireless communications. As Bluetooth and Wi-Fi are the two dominant communication interfaces, fast enough front-end rectifiers must be developed to operate at their gigahertz (GHz) transmission frequencies. Furthermore, despite of significant developments of n-type oxide semiconductors in the last dec
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Yilmaz, Koray. "Investigation Of Inse Thin Film Based Devices." Phd thesis, METU, 2004. http://etd.lib.metu.edu.tr/upload/3/12605431/index.pdf.

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In this study, InSe and CdS thin films were deposited by thermal evaporation method onto glass substrates. Schottky and heterojunction devices were fabricated by deposition of InSe and CdS thin films onto SnO2 coated glass substrates with various top metal contacts such as Ag, Au, In, Al and C. The structural, electrical and optical properties of the films were investigated prior to characterization of the fabricated devices. The structural properties of the deposited InSe and CdS thin films were examined through SEM and EDXA analysis. XRD and electrical measurements have indicated that undop
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Pinkett, Shawn L. "Techniques to facilitate the fabrication of ZnO-based thin film bulk acoustic wave devices." Diss., Georgia Institute of Technology, 2003. http://hdl.handle.net/1853/14889.

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Trivedi, Kruti. "Design, Fabrication and Characterization of ZnO based Thin Film Schottky Diodes and Transistors." Thesis, 2022. https://etd.iisc.ac.in/handle/2005/5821.

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The thesis focuses on the development of thin film Schottky diodes and thin film transistors (TFTs) based on ZnO. ZnO has been recognized as a promising candidates for the next generation of transparent and flexible electronics for displays. Some of the interesting properties of ZnO include the variation from insulating to semiconducting nature by change of stoichiometry, the relative low toxicity enabling its use in edible materials, the presence of a reasonably high electron mobility and its high transmission to visible light. All of these properties have increased interest for the d
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Yenesew, Markos, and Markos Yenesew. "The Fabrication of Gas Sensing and Optoelectronic Devices Based on ZnO Nanostructures with Composites of Thin Film Metallic Glass and Ultrananocrystalline Diamond." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/d7332x.

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博士<br>國立臺灣科技大學<br>光電工程研究所<br>106<br>Abstract In this Ph.D. thesis, composites of ultrananocrystalline diamond (UNCD), thin film metallic glass (TFMG), and a forest of zinc oxide (ZnO) nanostructures (nanorods and nanotubes) have been developed for gas sensing and optoelectronic applications. The composite-structures provide a number of synergetic properties including a large surface area, optimized crystallinity, work function, electrical properties, and surface passivation layers. The ZnO based composite-structures offer good performance in applications for hydrogen gas sensors and ultraviole
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Book chapters on the topic "ZnO based Schottky Thin film devices"

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Mahaboob Jilani, S., and P. Banerji. "Effect of ZnO Loading on the Electrical Characteristics of Graphene Oxide-ZnO Based Thin Film Transistors." In Physics of Semiconductor Devices. Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_156.

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Rohith, S., Sanket Katti, Rahul Dodamani, et al. "Effect of Sn Doping on ZnO Thin Film-Based Planar Schottky Diode for Optoelectronic Application." In Advances in Science, Technology & Innovation. Springer Nature Switzerland, 2024. http://dx.doi.org/10.1007/978-3-031-68038-0_5.

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Barua, Sreeparna, Anup Dey, Subhashis Roy, and Subir Kumar Sarkar. "Comparative Study of n-ZnO/SiO2/p-Si and Pd/n-ZnO/SiO2/p-Si Thin Film-Based H2 Sensor Fabricated by Sol-gel Process." In Advances in Communication, Devices and Networking. Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-7901-6_10.

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Ghosh, Sukanya, and Lintu Rajan. "II-VI Semiconductor-based Thin-Film Transistor Sensor for Room Temperature Hydrogen Detection From Idea to Product Development." In Nanoelectronics Devices: Design, Materials, and Applications (Part I). BENTHAM SCIENCE PUBLISHERS, 2023. http://dx.doi.org/10.2174/9789815136623123010010.

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Implementing gas sensors incorporating nanoelectronic devices to detect pollution and improve the safety control of industrial, medical, and domestic sectors has opened up a novel world with immense interest. As a promising renewable energy carrier and a potential replacement for fossil fuels, there is the paramount importance of hydrogen gas storage at extensive facilities worldwide. The sustainable production of hydrogen is increasing owing to its enormous energy per mass of any fuel. Nevertheless, due to its extreme flammability, simple and highly accurate sensors with promising sensing mat
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Liu, Weizhen, Cen Zhang, Haiyang Xu, and Yichun Liu. "ZnO-based ultraviolet light-emitting materials and devices." In Semiconducting Metal Oxide Thin-Film Transistors. IOP Publishing, 2020. http://dx.doi.org/10.1088/978-0-7503-2556-1ch4.

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Matsui, Hiroaki. "Biological Sensing Using Infrared SPR Devices Based on ZnO." In Biomedical Engineering. IntechOpen, 2022. http://dx.doi.org/10.5772/intechopen.104562.

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Biological detection based on surface plasmon resonances (SPRs) on metallic Ga-doped zinc oxide (ZnO: Ga) film surfaces is introduced as one of the interesting functionalities of ZnO. SPRs on ZnO: Ga films (ZnO-SPRs) have attracted much attention as alternative plasmonic materials in the infrared (IR) range. This chapter focuses on the structure and optical properties of ZnO-SPR with different layer structure from experimental and theoretical approaches. First, the plasmonic properties of single ZnO: Ga films excited by Kretschmann-type SPRs were investigated. Second, an insulator–metal–insula
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Robinson Azariah John Chelliah, Cyril, and Rajesh Swaminathan. "Binary Metal Oxides Thin Films Prepared from Pulsed Laser Deposition." In Practical Applications of Laser Ablation. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.96161.

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The semiconductor industry flourished from a simple Si-based metal oxide semiconductor field effect transistor to an era of MOSFET-based smart materials. In recent decades, researchers have been replacing all the materials required for the MOSFET device. They replaced the substrate with durable materials, lightweight materials, translucent materials and so on. They have came up with the possibility of replacing dielectric silicon dioxide material with high-grade dielectric materials. Even then the channel shift in the MOSFET was the new trend in MOSFET science. From the bulk to the atomic leve
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Omura, Yasuhisa. "Photovoltaic Performance Estimation of Thin Film Lateral Pn-Junction Solar Devices and Comprehensive Consideration of Performances of Various Homo- and Hetero-Junction Structures." In Semiconductor Nanoscale Devices: Materials and Design Challenges. BENTHAM SCIENCE PUBLISHERS, 2025. https://doi.org/10.2174/9789815313208125010016.

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This chapter provides a practical theoretical foundation and perspective on the performance of various thin-film lateral pn-junction solar devices under illumination. It focuses on Si- and Ge-based homo-junctions, as well as ZnO/Si (TypeI) and GaN/Si (Type-II) based hetero-junctions. Theoretical models assume polycrystalline or amorphous semiconductor materials. The study demonstrates that highlydoped Si- and Ge-based homo-junction architectures show great promise for highperformance solar devices. By utilizing published experimental results, the predicted performances of homo-junction and het
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Conference papers on the topic "ZnO based Schottky Thin film devices"

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Varma, Tarun, C. Periasamy, and Dharmendar Boolchandani. "Electrical and UV detection properties of ZnO thin film based schottky contacts deposited by RF magnetron sputtering." In 2017 Conference on Emerging Devices and Smart Systems (ICEDSS). IEEE, 2017. http://dx.doi.org/10.1109/icedss.2017.8073656.

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Rajan, Lintu, C. Periasamy, and Vineet Sahula. "Noble metal schottky contacts on nanocrystalline RF sputtered ZnO thin film." In 2017 Conference on Emerging Devices and Smart Systems (ICEDSS). IEEE, 2017. http://dx.doi.org/10.1109/icedss.2017.8073660.

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Armoot, Shahad T., and Ghusoon M. Ali. "Monocrystalline ZnO Nanorods Thin-film based Schottky Barrier Diode." In 2022 IEEE 22nd International Conference on Nanotechnology (NANO). IEEE, 2022. http://dx.doi.org/10.1109/nano54668.2022.9928680.

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Rogers, David J., Ferechteh Hosseini Teherani, Alireza Yasan, et al. "ZnO thin film templates for GaN-based devices." In Integrated Optoelectronic Devices 2005, edited by Manijeh Razeghi and Gail J. Brown. SPIE, 2005. http://dx.doi.org/10.1117/12.596912.

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Shin, W. C., K. Remashan, M. S. Oh, S. J. Park, and J. H. Jang. "Ring Oscillator Circuit based on ZnO Thin Film Transistors." In 2008 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2008. http://dx.doi.org/10.7567/ssdm.2008.g-8-3.

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Ali, Ghusoon M., and P. Chakrabarti. "Fabrication and characterization of nanostructure thin film ZnO Schottky contacts based UV photodetectors." In SPIE NanoScience + Engineering, edited by Eva M. Campo, Elizabeth A. Dobisz, and Louay A. Eldada. SPIE, 2013. http://dx.doi.org/10.1117/12.2044921.

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Wei, Yuefan, Zhaoyao Zhan, Hejun Du, and Van-Thai Tran. "Influence of annealing to the defect of inkjet-printed ZnO thin film." In Oxide-based Materials and Devices IX, edited by Ferechteh H. Teherani, David C. Look, and David J. Rogers. SPIE, 2018. http://dx.doi.org/10.1117/12.2286856.

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Chakrabarti, Subhananda, Punam Murkute, Hemant Ghadi, Shantanu Saha, and Vinayak Chavan. "Temperature-dependent phosphorous dopant activation in ZnO thin film deposited using plasma immersion ion implantation." In Oxide-based Materials and Devices IX, edited by Ferechteh H. Teherani, David C. Look, and David J. Rogers. SPIE, 2018. http://dx.doi.org/10.1117/12.2288944.

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Chen, K. J., F. Y. Hung, S. J. Chang, and S. J. Young. "Physical Characteristic of UV Photodetectors based on Sol-gel Derived ZnO Thin Film." In 2008 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2008. http://dx.doi.org/10.7567/ssdm.2008.p-9-4.

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Hung, Ching-Wen, Huey-Ing Chen, Tzu-Pin Chen, Tsung-Han Tsai, and Wen-Chau Liu. "Hydrogen-Sensing Behaviors of an InAlAs-Based Schottky Diode with a Pt Catalytic Thin Film." In 2007 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2007. http://dx.doi.org/10.7567/ssdm.2007.p-6-10.

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