Gotowe bibliografie tematyczne / Metal oxide semiconductor field-effect transistors

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Gotowa bibliografia na temat „Metal oxide semiconductor field-effect transistors”

Autor: Grafiati
Data publikacji: 4 czerwca 2021
Data aktualizacji: 28 lipca 2024

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Artykuły w czasopismach na temat "Metal oxide semiconductor field-effect transistors"

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Kumar, Prateek, Maneesha Gupta, Naveen Kumar, Marlon D. Cruz, Hemant Singh, Ishan, and Kartik Anand. "Performance Evaluation of Silicon-Transition Metal Dichalcogenides Heterostructure Based Steep Subthreshold Slope-Field Effect Transistor Using Non-Equilibrium Green’s Function." Sensor Letters 18, no. 6 (June 1, 2020): 468–76. http://dx.doi.org/10.1166/sl.2020.4236.

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With technology invading nanometer regime performance of the Metal-Oxide-semiconductor Field Effect Transistor is largely hampered by short channel effects. Most of the simulation tools available do not include short channel effects and quantum effects in the analysis which raises doubt on their authenticity. Although researchers have tried to provide an alternative in the form of tunnel field-effect transistors, junction-less transistors, etc. but they all suffer from their own set of problems. Therefore, Metal-Oxide-Semiconductor Field-Effect Transistor remains the backbone of the VLSI indus
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Anderson, Jackson, Yanbo He, Bichoy Bahr, and Dana Weinstein. "Integrated acoustic resonators in commercial fin field-effect transistor technology." Nature Electronics 5, no. 9 (September 23, 2022): 611–19. http://dx.doi.org/10.1038/s41928-022-00827-6.

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AbstractIn radio communication, the growth of beamforming and multiple-input–multiple-output technologies, which increase transceiver complexity, have led to a drive to reduce the size, weight and power of radio components by integrating them into a single system on chip. One approach is to integrate the frequency references of acoustic microelectromechanical systems (MEMS) with complementary metal–oxide–semiconductor processes, typically through a MEMS-first or MEMS-last approach that requires process customization. Here we report unreleased acoustic resonators that are fabricated in 14 nm fi
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Weng, Wu-Te, Yao-Jen Lee, Horng-Chih Lin, and Tiao-Yuan Huang. "Plasma-Induced Damage on the Reliability of Hf-Based High-k/Dual Metal-Gates Complementary Metal Oxide Semiconductor Technology." International Journal of Plasma Science and Engineering 2009 (December 14, 2009): 1–10. http://dx.doi.org/10.1155/2009/308949.

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This study examines the effects of plasma-induced damage (PID) on Hf-based high-k/dual metal-gates transistors processed with advanced complementary metal-oxide-semiconductor (CMOS) technology. In addition to the gate dielectric degradations, this study demonstrates that thinning the gate dielectric reduces the impact of damage on transistor reliability including the positive bias temperature instability (PBTI) of n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) and the negative bias temperature instability (NBTI) of p-channel MOSFETs. This study shows that high-k/metal-
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John Chelliah, Cyril R. A., and Rajesh Swaminathan. "Current trends in changing the channel in MOSFETs by III–V semiconducting nanostructures." Nanotechnology Reviews 6, no. 6 (November 27, 2017): 613–23. http://dx.doi.org/10.1515/ntrev-2017-0155.

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AbstractThe quest for high device density in advanced technology nodes makes strain engineering increasingly difficult in the last few decades. The mechanical strain and performance gain has also started to diminish due to aggressive transistor pitch scaling. In order to continue Moore’s law of scaling, it is necessary to find an effective way to enhance carrier transport in scaled dimensions. In this regard, the use of alternative nanomaterials that have superior transport properties for metal-oxide-semiconductor field-effect transistor (MOSFET) channel would be advantageous. Because of the e
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Duan, Haoyuan. "From MOSFET to FinFET to GAAFET: The evolution, challenges, and future prospects." Applied and Computational Engineering 50, no. 1 (March 25, 2024): 113–20. http://dx.doi.org/10.54254/2755-2721/50/20241285.

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With the swift progression of semiconductor technology, the transition from Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) to Fin Field-Effect Transistors (FinFETs) and further to Gate-All-Around Field-Effect Transistors (GAAFETs) presents significant potential for the future of electronic devices and systems. This article delves into the intricate applications, challenges, and prospective evolutions associated with FinFET and GAAFET technologies. Findings suggest that these technologies are particularly apt for low-power logic systems, high-performance computing, and artificial
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Ouyang, Zhuping, Wanxia Wang, Mingjiang Dai, Baicheng Zhang, Jianhong Gong, Mingchen Li, Lihao Qin, and Hui Sun. "Research Progress of p-Type Oxide Thin-Film Transistors." Materials 15, no. 14 (July 8, 2022): 4781. http://dx.doi.org/10.3390/ma15144781.

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The development of transparent electronics has advanced metal–oxide–semiconductor Thin-Film transistor (TFT) technology. In the field of flat-panel displays, as basic units, TFTs play an important role in achieving high speed, brightness, and screen contrast ratio to display information by controlling liquid crystal pixel dots. Oxide TFTs have gradually replaced silicon-based TFTs owing to their field-effect mobility, stability, and responsiveness. In the market, n-type oxide TFTs have been widely used, and their preparation methods have been gradually refined; however, p-Type oxide TFTs with
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Choi, Woo Young, Jong Duk Lee, and Byung-Gook Park. "Integration Process of Impact-Ionization Metal–Oxide–Semiconductor Devices with Tunneling Field-Effect-Transistors and Metal–Oxide–Semiconductor Field-Effect Transistors." Japanese Journal of Applied Physics 46, no. 1 (January 10, 2007): 122–24. http://dx.doi.org/10.1143/jjap.46.122.

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Bendada, E., K. Raïs, P. Mialhe, and J. P. Charles. "Surface Recombination Via Interface Defects in Field Effect Transistors." Active and Passive Electronic Components 21, no. 1 (1998): 61–71. http://dx.doi.org/10.1155/1998/91648.

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Recombination current at the oxide-semiconductor interface of metal-oxide-semiconductor devices has been analyzed and compared with the experimental result. The activity of interface traps is dependent on the energy level and on the operating conditions. A model is shown to be powerful to describe the effect of energy level of bulk recombination centers on the values of reverse recombination current.
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Choi, Woo Young. "Comparative Study of Tunneling Field-Effect Transistors and Metal–Oxide–Semiconductor Field-Effect Transistors." Japanese Journal of Applied Physics 49, no. 4 (April 20, 2010): 04DJ12. http://dx.doi.org/10.1143/jjap.49.04dj12.

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Diao Wenhao, 刁文豪, 江伟华 Jiang Weihua, and 王新新 Wang Xinxin. "Marx generator using metal-oxide-semiconductor field-effect transistors." High Power Laser and Particle Beams 22, no. 3 (2010): 565–68. http://dx.doi.org/10.3788/hplpb20102203.0565.

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Rozprawy doktorskie na temat "Metal oxide semiconductor field-effect transistors"

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Vega, Reinaldo A. "Schottky field effect transistors and Schottky CMOS circuitry /." Online version of thesis, 2006. http://hdl.handle.net/1850/5179.

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Shi, Xuejie. "Compact modeling of double-gate metal-oxide-semiconductor field-effect transistor /." View abstract or full-text, 2006. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202006%20SHI.

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Zhang, Zhikuan. "Source/drain engineering for extremely scaled MOSFETs /." View abstract or full-text, 2005. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202005%20ZHANG.

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Fleischer, Stephen. "A study of gate-oxide leakage in MOS devices." Thesis, [Hong Kong : University of Hong Kong], 1993. http://sunzi.lib.hku.hk/hkuto/record.jsp?B1364600X.

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Höhr, Timm. "Quantum-mechanical modeling of transport parameters for MOS devices /." Konstanz : Hartnung-Gorre, 2006. http://www.loc.gov/catdir/toc/fy0707/2007358987.html.

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Originally presented as the author's thesis (Swiss Federal Institute of Technology), Diss. ETH No. 16228.<br>Summary in German and English, text in English. Includes bibliographical references (p. 123-132).
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Turner, Gary Chandler. "Zinc Oxide MESFET Transistors." Thesis, University of Canterbury. Electrical and Computer Engineering, 2009. http://hdl.handle.net/10092/3439.

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Zinc oxide is a familiar ingredient in common household items including sunscreen and medicines. It is, however, also a semiconductor material. As such, it is possible to use zinc oxide (ZnO) to make semiconductor devices such as diodes and transistors. Being transparent to visible light in its crystalline form means that it has the potential to be the starting material for so-called 'transparent electronics', where the entire device is transparent. Transparent transistors have the potential to improve the performance of the electronics currently used in LCD display screens. Most common semico
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Randell, Heather Eve. "Applications of stress from boron doping and other challenges in silicon technology." [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0010292.

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Wu, Xu Sheng. "Three dimensional multi-gates devices and circuits fabrication, characterization, and modeling /." View abstract or full-text, 2005. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202005%20WUX.

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Modzelewski, Kenneth Paul. "DC parameter extraction technique for independent double gate MOSFETs a thesis presented to the faculty of the Graduate School, Tennessee Technological University /." Click to access online, 2009. http://proquest.umi.com/pqdweb?index=11&did=1759989211&SrchMode=1&sid=1&Fmt=6&VInst=PROD&VType=PQD&RQT=309&VName=PQD&TS=1250600320&clientId=28564.

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Trivedi, Vishal P. "Physics and design of nonclassical nanoscale CMOS devices with ultra-thin bodies." [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0009860.

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Książki na temat "Metal oxide semiconductor field-effect transistors"

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Pierret, Robert F. Field effect devices. 2nd ed. Reading, Mass: Addison-Wesley Pub. Co., 1990.

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Baliga, B. Jayant. Advanced power MOSFET concepts. New York: Springer, 2010.

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Soclof, Sidney. Metal-oxide-semiconductor field-effect transistors (MOSFETS): Principles and applications. Boston: Artech House, 1996.

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Physics of semiconductor devices. Englewood Cliffs, N.J: Prentice Hall, 1990.

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T, Andre Noah, and Simon Lucas M, eds. MOSFETS: Properties, preparations to performance. New York: Nova Science Publishers, 2008.

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Korec, Jacek. Low voltage power MOSFETs: Design, performance and applications. New York: Springer, 2011.

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Paul, Reinhold. MOS-Feldeffekttransistoren. Berlin: Springer-Verlag, 1994.

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Shur, Michael. Physics of semiconductor devices: Software and manual. London: Prentice-Hall, 1990.

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Oktyabrsky, Serge, and Peide D. Ye. Fundamentals of III-V semiconductor MOSFETs. New York: Springer, 2010.

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Amara, Amara, and Rozeau Olivier, eds. Planar double-gate transistor: From technology to circuit. [Dordrecht?]: Springer, 2009.

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Części książek na temat "Metal oxide semiconductor field-effect transistors"

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Li, Sheng S. "Metal—Oxide—Semiconductor Field-Effect Transistors." In Semiconductor Physical Electronics, 423–54. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4613-0489-0_14.

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Yuan, J. S., and J. J. Liou. "Metal—Oxide Semiconductor Field-Effect Transistors." In Semiconductor Device Physics and Simulation, 127–61. Boston, MA: Springer US, 1998. http://dx.doi.org/10.1007/978-1-4899-1904-5_5.

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Banerjee, Amal. "Metal Oxide Semiconductor Field Effect Transistor." In Synthesis Lectures on Engineering, Science, and Technology, 111–38. Cham: Springer Nature Switzerland, 2023. http://dx.doi.org/10.1007/978-3-031-45750-0_9.

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Li, Yiming, Jam-Wem Lee, and Hong-Mu Chou. "Comparison of Nanoscale Metal-Oxide-Semiconductor Field Effect Transistors." In Simulation of Semiconductor Processes and Devices 2004, 307–10. Vienna: Springer Vienna, 2004. http://dx.doi.org/10.1007/978-3-7091-0624-2_72.

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Evstigneev, Mykhaylo. "Metal–Oxide–Semiconductor Field Effect Transistor (MOSFET)." In Introduction to Semiconductor Physics and Devices, 233–55. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-031-08458-4_10.

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Asadi, Farzin. "Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET)." In ABCs of Electronics, 123–31. Berkeley, CA: Apress, 2024. http://dx.doi.org/10.1007/979-8-8688-0134-1_8.

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Tsang, Paul J. "Structures and Fabrication of Metal-Oxide-Silicon Field-Effect Transistor." In Handbook of Advanced Semiconductor Technology and Computer Systems, 92–147. Dordrecht: Springer Netherlands, 1988. http://dx.doi.org/10.1007/978-94-011-7056-7_4.

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Saha, Jhuma, Amrita Kumari, Shankaranand Jha, and Subindu Kumar. "On the Voltage Transfer Characteristics (VTC) of some Nanoscale Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs)." In Physics of Semiconductor Devices, 211–14. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_52.

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Tilak, Vinayak. "Inversion Layer Electron Transport in 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistors." In Silicon Carbide, 267–90. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2011. http://dx.doi.org/10.1002/9783527629077.ch11.

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Bharti, Deepshikha, and Aminul Islam. "Operational Characteristics of Vertically Diffused Metal Oxide Semiconductor Field Effect Transistor." In Nanoscale Devices, 91–108. Boca Raton : Taylor & Francis, a CRC title, part of the Taylor & Francis imprint, a member of the Taylor & Francis Group, the academic division of T&F Informa, plc, 2019.: CRC Press, 2018. http://dx.doi.org/10.1201/9781315163116-5.

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Streszczenia konferencji na temat "Metal oxide semiconductor field-effect transistors"

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Lee, Ching-Ting, and Ya-Lan Chou. "GaN-based metal-oxide-semiconductor field-effect transistors." In 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT). IEEE, 2014. http://dx.doi.org/10.1109/icsict.2014.7021209.

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Yu, Jeng-Wei, Yuh-Renn Wu, Jian-Jang Huang, and Lung-Han Peng. "75GHz Ga2O3/GaN Single Nanowire Metal- Oxide-Semiconductor Field-Effect Transistors." In 2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS). IEEE, 2010. http://dx.doi.org/10.1109/csics.2010.5619673.

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Aihara, Takuma, Ayumi Takeda, Masashi Fukuhara, Yuya Ishii, and Mitsuo Fukuda. "Metal-oxide-semiconductor field-effect transistors operated by surface plasmon polaritons." In SPIE Micro+Nano Materials, Devices, and Applications, edited by James Friend and H. Hoe Tan. SPIE, 2013. http://dx.doi.org/10.1117/12.2033618.

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Okumura, H., T. Takahashi, and M. Shimizu. "Demonstration of m-plane GaN metal-oxide-semiconductor field-effect transistors." In 2019 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2019. http://dx.doi.org/10.7567/ssdm.2019.ps-4-25.

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Sakai, Hiroki, Takuma Aihara, Masashi Fukuhara, Masashi Ota, Yu Kimura, Yuya Ishii, and Mitsuo Fukuda. "Integration of plasmonic device with metal-oxide-semiconductor field-effect transistors." In 2014 International Conference on Optical MEMS and Nanophotonics (OMN). IEEE, 2014. http://dx.doi.org/10.1109/omn.2014.6924581.

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Koide, Yasuo. "High-k Oxides on Hydrogenated-Diamond for Metal-Oxide-Semiconductor Field-Effect Transistors [Invited]." In 2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS). IEEE, 2019. http://dx.doi.org/10.1109/icmts.2019.8730974.

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Girardi, Stefano, Marta Maschietto, Ralf Zeitler, Mufti Mahmud, and Stefano Vassanelli. "High resolution cortical imaging using electrolyte-(metal)-oxide-semiconductor field effect transistors." In 5th International IEEE/EMBS Conference on Neural Engineering (NER 2011). IEEE, 2011. http://dx.doi.org/10.1109/ner.2011.5910539.

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Aihara, Takuma, Ayumi Takeda, Masashi Fukuhara, Yuya Ishii, and Mitsuo Fukuda. "Plasmonic signal amplification by monolithically integrated metal-oxide-semiconductor field-effect transistors." In 2013 IEEE Photonics Conference (IPC). IEEE, 2013. http://dx.doi.org/10.1109/ipcon.2013.6656689.

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Liu, Jiangwei, Hirotaka Ohsato, Bo Da, and Yasuo Koide. "Diamond Metal-Oxide-Semiconductor Field-Effect Transistors on a Large-Area Wafer." In 2023 IEEE 6th International Conference on Electronic Information and Communication Technology (ICEICT). IEEE, 2023. http://dx.doi.org/10.1109/iceict57916.2023.10245613.

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Vinod Adivarahan, Mikhail Gaevski, Naveen Tipirneni, Bin Zhang, Yanqing Deng, Zijiang Yang, and Asif Khan. "0.18 μm double-recessed III-nitride metal-oxide double heterostructure field-effect transistors." In 2007 International Semiconductor Device Research Symposium. IEEE, 2007. http://dx.doi.org/10.1109/isdrs.2007.4422460.

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