Увійти

Готові списки джерел за темами / Plasma Electronics / Статті в журналах

Щоб переглянути інші типи публікацій з цієї теми, перейдіть за посиланням: Plasma Electronics.

Статті в журналах з теми "Plasma Electronics"

Автор: Grafiati

Опубліковано: 28 травня 2022

Оновлено: 31 липня 2025

Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями

Оберіть тип джерела:

Ознайомтеся з топ-50 статей у журналах для дослідження на тему "Plasma Electronics".

Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.

Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.

Переглядайте статті в журналах для різних дисциплін та оформлюйте правильно вашу бібліографію.

1

Shur, Michael S., and Victor Ryzhii. "Plasma Wave Electronics." International Journal of High Speed Electronics and Systems 13, no. 02 (2003): 575–600. http://dx.doi.org/10.1142/s0129156403001831.

Повний текст джерела

Анотація:

Plasma waves are oscillations of electron density in time and space. In deep submicron field effect transistors plasma wave frequencies lie in the terahertz range and can be tuned by applied gate bias. Since the plasma wave frequency is much larger that the inverse electron transit time in the device, it is easier to reach "ballistic" regimes for plasma waves than for electrons moving with drift velocities. In the ballistic regime, no collisions of electrons with impurities or lattice vibrations occur on a time scale on the order of the plasma oscillation period, and the device channel acts as

Стилі APA, Harvard, Vancouver, ISO та ін.

2

Kuzelev, M. V., Anri A. Rukhadze, P. S. Strelkov, and A. G. Shkvarunets. "Relativistic plasma UHF electronics." Uspekhi Fizicheskih Nauk 146, no. 8 (1985): 709. http://dx.doi.org/10.3367/ufnr.0146.198508g.0709.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

3

Kuzelev, M. V., O. T. Loza, A. A. Rukhadze, P. S. Strelkov, and A. G. Shkvarunets. "Plasma relativistic microwave electronics." Plasma Physics Reports 27, no. 8 (2001): 669–91. http://dx.doi.org/10.1134/1.1390539.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

4

Kuzelev, M. V., Anri A. Rukhadze, P. S. Strelkov, and A. G. Shkvarunets. "Relativistic plasma UHF electronics." Soviet Physics Uspekhi 28, no. 8 (1985): 724–26. http://dx.doi.org/10.1070/pu1985v028n08abeh003886.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

5

Shur, M. "Plasma wave terahertz electronics." Electronics Letters 46, no. 26 (2010): S18. http://dx.doi.org/10.1049/el.2010.8457.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

6

Fainberg, Ya B. "Plasma electronics and plasma acceleration of charged particles." Plasma Physics Reports 26, no. 4 (2000): 335–43. http://dx.doi.org/10.1134/1.952858.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

7

Loza, O. T., A. G. Shkvarunets, and P. S. Strelkov. "Experimental plasma relativistic microwave electronics." IEEE Transactions on Plasma Science 26, no. 3 (1998): 615–27. http://dx.doi.org/10.1109/27.700798.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

8

Strelkov, P. S. "Experimental relativistic plasma microwave electronics." Physics-Uspekhi 62, no. 5 (2019): 465–86. http://dx.doi.org/10.3367/ufne.2018.09.038443.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

9

Martínez Montejano, Roberto Carlos, Carlos Miguel Castillo Escandón, Víctor Esteban Espinoza López, Isaac Campos Cantón, María Guadalupe Neira Velázquez, and Gustavo Soria Arguello. "Construction of a power electronic source for cold plasma generation." Ingeniería Investigación y Tecnología 20, no. 4 (2019): 1–12. http://dx.doi.org/10.22201/fi.25940732e.2019.20n4.047.

Повний текст джерела

Анотація:

This paper presents the development of a high voltage and high-frequency power electronics source, for plasma generation, at atmospheric pressure and vacuum, using helium and air as working gases. The source design consists of an inductive (L) full bridge series resonant inverter at high frequency, where the control implemented allows varying duty cycle and frequency. Plasma generation is made by high voltage with the power signal applied on two electrodes, which provides a strong electric field that excites, and thus, ionize helium particles or air particles. The power electronic source opera

Стилі APA, Harvard, Vancouver, ISO та ін.

10

Li, Botong, Imteaz Rahaman, Hunter D. Ellis, et al. "Plasma Treatment Technologies for GaN Electronics." Electronics 13, no. 22 (2024): 4343. http://dx.doi.org/10.3390/electronics13224343.

Повний текст джерела

Анотація:

Nowadays, the third-generation semiconductor led by GaN has brought great changes to the semiconductor industry. Utilizing its characteristics of a wide bandgap, high breakdown Electric field, and high electron mobility, GaN material is widely applied in areas such as 5G communication and electric vehicles to improve energy conservation and reduce emissions. However, with the progress in the development of GaN electronics, surface and interface defects have become a main problem that limits the further promotion of their performance and stability, increasing leakage current and causing degrada

Стилі APA, Harvard, Vancouver, ISO та ін.

11

Silva, A. V. F., K. H. Tsui, N. P. Pimentel, and C. A. Massone. "Plasma electronics in pulsed nitrogen lasers." IEEE Journal of Quantum Electronics 28, no. 9 (1992): 1937–40. http://dx.doi.org/10.1109/3.144487.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

12

Kuzelev, Mikhail, Anri Rukhadze, and Pavel Strelkov. "Present state of plasma relativistic microwave electronics in general physics institute of RAS." Izvestiya VUZ. Applied Nonlinear Dynamics 9, no. 2 (2001): 3–26. http://dx.doi.org/10.18500/0869-6632-2001-9-2-3-26.

Повний текст джерела

Анотація:

The review of present state of theoretical and experimental investigations in a novel perspective branch of microwave electronics - plasma relativistic microwave electronics is presented. Devices of plasma relativistic microwave electronics are exceptional. The wide radiation frequency band and very simple frequency retuning of plasma relativistic microwave devices make them preferable in compare of the vacuum ones, the achieved power of such devices is comparable to the vacuum microwave devices.

Стилі APA, Harvard, Vancouver, ISO та ін.

13

Sadhir, R., and H. Saunders. "Plasma Processes for Electrical and Electronics Applications." IEEE Electrical Insulation Magazine 2, no. 6 (1986): 8–14. http://dx.doi.org/10.1109/mei.1986.290477.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

14

GUSHENETS, V. I., E. M. OKS, G. YU YUSHKOV, and N. G. REMPE. "Current status of plasma emission electronics: I. Basic physical processes." Laser and Particle Beams 21, no. 2 (2003): 123–38. http://dx.doi.org/10.1017/s0263034603212027.

Повний текст джерела

Анотація:

This paper reviews the physical phenomena that accompany the emission of electrons and ions from plasma. The development of plasma emission electronics as an independent research field is closely associated with the name of its founder, Professor Kreindel Yu. E. The well-known advantages of plasma electron emitters (plasma cathodes) are the higher emission current density, the pulsed emission capability, and the wider range of residual gas pressures. A peculiar property of the plasma cathode is the possibility of extracting practically all electrons from plasma. The parameters of an ion and el

Стилі APA, Harvard, Vancouver, ISO та ін.

15

Shur, Michael. "Terahertz Sensing Technology." International Journal of High Speed Electronics and Systems 24, no. 01n02 (2015): 1550001. http://dx.doi.org/10.1142/s0129156415500019.

Повний текст джерела

Анотація:

Sensing applications of THz technology include applications for space exploration, detection of concealed objects, explosive identification, and THz cancer detection. This paper will review these and other emerging applications and existing and potential THz sources and detectors, including photonic and electronic THz devices, such as plasmonic field effect transistors capable of detecting and emitting THz radiation. Plasma wave electronics devices demonstrated THz detection using GaAs-based and GaN-based HEMTs, Si MOS, SOI, and FINFETs and FET arrays. This technology has potential to become a

Стилі APA, Harvard, Vancouver, ISO та ін.

16

Daltrini, Andre M., Stanislav A. Moshkalev, Thomas Morgan, Robert Piejak, and William Graham. "Plasma Diagnostics in an Inductively Coupled Plasma - Gaseous Electronics Conference Reference Cell." ECS Transactions 14, no. 1 (2019): 365–73. http://dx.doi.org/10.1149/1.2956051.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

17

Milani, Marcelo. "A new way to enable flexible printed electronics." OPE Journal 12, no. 40 (2022): 24. http://dx.doi.org/10.51202/2366-8040-2022-40-024.

Повний текст джерела

Анотація:

The functionalisation of flexible surfaces is a challenge for the industry. Conventional methods quickly reach their limits, especially when it comes to the pre-treatment of inert or sensitive materials. There is now a solution for it, with the innovative organic plasma coating technology offered by the Luxembourg company Molecular Plasma Group (MPG)

Стилі APA, Harvard, Vancouver, ISO та ін.

18

BUGAEV, A. S., A. V. VIZIR, V. I. GUSHENETS, et al. "Current status of plasma emission electronics: II. Hardware." Laser and Particle Beams 21, no. 2 (2003): 139–56. http://dx.doi.org/10.1017/s0263034603212039.

Повний текст джерела

Анотація:

This paper is devoted to the engineering embodiment of the modern methods for producing charged ion and electron beams by extracting them from the plasma of a discharge. Electron beams use to execute electron-beam welding, annealing, and surface heating of materials and to realize plasmochemical reactions stimulated by fast electrons. Ion beams allow realization of technologies of ion implantation or ion-assisted deposition of coatings thereby opening new prospects for the creation of compounds and alloys by the method that makes it possible to obtain desired parameters and functional properti

Стилі APA, Harvard, Vancouver, ISO та ін.

19

Guérineau, Julia, Jollan Ton, and Mariia Zhuldybina. "Screen Printing Conductive Inks on Textiles: Impact of Plasma Treatment." Sensors 25, no. 13 (2025): 4240. https://doi.org/10.3390/s25134240.

Повний текст джерела

Анотація:

Textile-based wearable devices are rapidly gaining traction in the Internet of Things paradigm and offer distinct advantages for data collection and analysis across a wide variety of applications. Seamlessly integrating electronics in textiles remains a technical challenge, especially when the textiles’ essential properties, such as comfort, breathability, and flexibility, are meant to be preserved. This article investigates screen printing as a textile post-processing technique for electronic integration, and highlights its versatility, cost-effectiveness, and adaptability in terms of design

Стилі APA, Harvard, Vancouver, ISO та ін.

20

Hidding, B., O. Karger, T. Königstein., et al. "Laser-plasma-based space radiation reproduction in the laboratory." Scientific Reports 7 (February 8, 2017): 42354. https://doi.org/10.1038/srep42354.

Повний текст джерела

Анотація:

Space radiation is a great danger to electronics and astronauts onboard space vessels. The spectral flux of space electrons, protons and ions for example in the radiation belts is inherently broadband, but this is a feature hard to mimic with conventional radiation sources. Using laser-plasma-accelerators, we reproduced relativistic, broadband radiation belt flux in the laboratory, and used this man-made space radiation to test the radiation hardness of space electronics. Such close mimicking of space radiation in the lab builds on the inherent ability of laser-plasma-accelerators to directly

Стилі APA, Harvard, Vancouver, ISO та ін.

21

Langston, Lee S. "Plasma Actuator Tip Flow Control." Mechanical Engineering 136, no. 12 (2014): 52–53. http://dx.doi.org/10.1115/1.2014-dec-4.

Повний текст джерела

Анотація:

This GE study represents the first open literature report of plasma actuators actually used on gas turbine blading at representative engine flow conditions. The exact mechanisms of interaction between weakly ionized gas and neutral air are still under study; however, the collisional processes between them are responsible for the momentum transfer causing the plasma actuator flow. Tip clearance effects are especially critical in gas turbine high-pressure compressors, where they are a large source of aerodynamic loss and stall inducing blockage. In the Dusseldorf discussion on the GE paper, it h

Стилі APA, Harvard, Vancouver, ISO та ін.

22

Carmel, Y., W. R. Lou, T. M. Antonsen, et al. "Relativistic plasma microwave electronics: Studies of high‐power plasma‐filled backward‐wave oscillators." Physics of Fluids B: Plasma Physics 4, no. 7 (1992): 2286–92. http://dx.doi.org/10.1063/1.860198.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

23

Kizil, Huseyin, Meryem Oznur Pehlivaner, and Levent Trabzon. "Surface Plasma Characterization of Polyimide Films for Flexible Electronics." Advanced Materials Research 970 (June 2014): 132–35. http://dx.doi.org/10.4028/www.scientific.net/amr.970.132.

Повний текст джерела

Анотація:

Flexible electronics have drawn much attention due to vast application possibilities. Polyimide was the substrate of choice as a flexible substrate owing to its properties such as good mechanical strength, high temperature resistance, good dimensional stability, and low dielectric constant. The adhesion between metal and polymer substrate plays a crucial role for reliability of these applications and low adhesion was the cause for most failures. In this study, plasma surface treatments were applied on polyimide surface by inductively coupled plasma (ICP) treatment system. The results of contac

Стилі APA, Harvard, Vancouver, ISO та ін.

24

Kuo, Yue. "(Invited) Plasma-Based Thin Film Technology in Fabrication of Nano- to Giga-Sized Electronics." ECS Meeting Abstracts MA2022-02, no. 30 (2022): 1106. http://dx.doi.org/10.1149/ma2022-02301106mtgabs.

Повний текст джерела

Анотація:

This talk is presented to honor Professor Noel Buckley who has made many important contributions in compound semiconductors, copper thin film deposition, batteries, and other topics critical to the manufacture of modern optoelectronics. He is also a good friend, colleague, and collaborator for 3 decades. Plasma technology has been broadly used in the mass production of modern electronics varying from nano-sized devices in ICs to giga-dimension flat panel displays. It is especially critical to the preparation of thin films with well-controlled properties, geometry, and reliability. In this talk

Стилі APA, Harvard, Vancouver, ISO та ін.

25

Klengel, Robert, Sandy Klengel, and Bianca Böttge. "Challenges and Solutions in Preparation for High Resolution Failure Analysis of Power Electronics." International Symposium on Microelectronics 2014, no. 1 (2014): 000338–42. http://dx.doi.org/10.4071/isom-tp61.

Повний текст джерела

Анотація:

The high-resolution failure analysis of power electronic devices is very challenging, as relatively large features have to be accessed and analyzed with nanometer resolution. Recently new tools have been introduced for fast and efficient sample preparation of stacked devices and complex packages. One of them is the focused ion beam (FIB) technique using a high energy Xenon Plasma-FIB. This paper outlines preparation issues needed to find the physics of failure of large and complex devices as used in power electronics. Different methods like high throughput Plasma FIB preparation to combined La

Стилі APA, Harvard, Vancouver, ISO та ін.

26

Birau, M., M. A. Krasil'nikov, M. V. Kuzelev, and Anri A. Rukhadze. "Problems in the theory of relativistic plasma microwave electronics." Uspekhi Fizicheskih Nauk 167, no. 10 (1997): 1025. http://dx.doi.org/10.3367/ufnr.0167.199710a.1025.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

27

Birau, M., M. A. Krasil'nikov, M. V. Kuzelev, and Anri A. Rukhadze. "Problems in the theory of relativistic plasma microwave electronics." Physics-Uspekhi 40, no. 10 (1997): 975–92. http://dx.doi.org/10.1070/pu1997v040n10abeh000287.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

28

ITATANI, Ryohei. "Low temperature plasmas and engineering (II) - On application of low temperature plasma to electronics." SHINKU 28, no. 4 (1985): 157–67. http://dx.doi.org/10.3131/jvsj.28.157.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

29

Weber, Larry F., and Jane D. Birk. "Materials and Manufacturing Issues for Color Plasma Displays." MRS Bulletin 21, no. 3 (1996): 65–68. http://dx.doi.org/10.1557/s0883769400036150.

Повний текст джерела

Анотація:

Recent demonstrations of color-plasma displays with exceptional image quality and performance that meet and in some cases exceed that of cathode-ray tubes (CRTs) have resulted in a renewed interest in this 25-year-old technology. The tremendous market potential for large-area plasma displays for both home-entertainment and computer applications now appears to be an attainable goal. This new generation of plasma displays features full color capability, high brightness and contrast ratio, wide viewing angles, and rapid refresh rate. The success of today's plasma displays is the result of the int

Стилі APA, Harvard, Vancouver, ISO та ін.

30

Rafalak, Wiktoria, Andrzej Bartnik, Tomasz Fok, Łukasz Węgrzyński, and Mateusz Majszyk. "Application of Schlieren photography for visualisation of a pulsed gaseous target." Bulletin of the Military University of Technology 72, no. 3 (2023): 65–81. http://dx.doi.org/10.5604/01.3001.0054.6373.

Повний текст джерела

Анотація:

The article describes Schlieren photography, realised using a laser plasma as a radiationsource. Optical systems prepared for visualisation of a stationary gas outflow and a pulsed gaseoustarget, produced in an atmosphere or vacuum environment are presented. A He-Ne laser beam orlaser plasmas were used as the light sources. Schlieren images of outflows of helium, carbon dioxide,krypton, nitrogen and sulphur hexafluoride, are presented. A comparison of various gas streams,formed in atmosphere, imaged using different light sources are shown. Schlieren images of a twostreamgaseous target formed i

Стилі APA, Harvard, Vancouver, ISO та ін.

31

Guggenheim, Ludwig, Ralph Herber, Silvano Keller, and Robert Gansert. "Low Pressure and Vacuum Plasma Spray Build Better Coatings for Engine Applications." AM&P Technical Articles 173, no. 2 (2015): 44–46. http://dx.doi.org/10.31399/asm.amp.2015-02.p044.

Повний текст джерела

Анотація:

Abstract Vacuum plasma and low pressure plasma spray technologies each provide unique solutions for achieving superior properties in metallic coatings that require low oxide content and high density. Applications include various turbine engine components, as well as biomedical and electronics components.

Стилі APA, Harvard, Vancouver, ISO та ін.

32

Spruytte, Sylvia G., Christopher W. Coldren, Ann F. Marshall, Michael C. Larson, and James S. Harris. "MBE Growth of Nitride-Arsenide Materials for long Wavelength Opto-electronics." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 474–80. http://dx.doi.org/10.1557/s109257830000466x.

Повний текст джерела

Анотація:

Nitride-Arsenide materials were grown by molecular beam epitaxy (MBE) using a radio frequency (rf) nitrogen plasma. The plasma conditions that maximize the amount of atomic nitrogen versus molecular nitrogen were determined using the emission spectrum of the plasma. Under constant plasma source conditions and varying group III flux, the nitrogen concentration in the film is inversely proportional to the group III flux (i. e. the nitrogen sticking coefficient is unity). The relationship between nitrogen concentration in the film and lattice parameter of the film is not linear for nitrogen conce

Стилі APA, Harvard, Vancouver, ISO та ін.

33

Stacey, Alastair. "Approaches to Surface Electronics with Hydrogen Terminated Diamond." ECS Meeting Abstracts MA2025-01, no. 35 (2025): 1691. https://doi.org/10.1149/ma2025-01351691mtgabs.

Повний текст джерела

Анотація:

Diamond is a leading material candidate for high power, high frequency and extreme environment electronics. However, its ultrawide bandgap and deep electronic dopants present significant challenges to development of devices which fulfil its potential. Here I will present our efforts to develop the diamond surface for the creation of high performance surface electronic devices. In particular, I will focus on our efforts, in partnership with device specialists, to develop material synthesis, surface processing and surface science characterisation methodologies, focused on the creation of optimiz

Стилі APA, Harvard, Vancouver, ISO та ін.

34

Dai, Yijun, Wei Guo, Li Chen, et al. "Polarization modulation of 2DEG toward plasma-damage-free GaN HEMT isolation." Applied Physics Letters 121, no. 1 (2022): 012104. http://dx.doi.org/10.1063/5.0097037.

Повний текст джерела

Анотація:

GaN electronics have hinged on invasive isolation such as mesa etching and ion implantation to define device geometry, which, however, suffer from damages, hence potential leakage paths. In this study, we propose a new paradigm of polarization isolation utilizing intrinsic electronic properties, realizing in situ isolation during device epitaxy without the need of post-growth processing. Specifically, adjacent III- and N-polar AlGaN/GaN heterojunctions were grown simultaneously on the patterned AlN nucleation layer on c-plane sapphire substrates. The two-dimensional electron gas (2DEG) was for

Стилі APA, Harvard, Vancouver, ISO та ін.

35

Ernyleva, S. E., and O. T. Loza. "Microwave pulse shortening in plasma relativistic high-current microwave electronics." Physics of Wave Phenomena 25, no. 2 (2017): 130–36. http://dx.doi.org/10.3103/s1541308x17020091.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

36

Demmler, M. "Ion-beam and plasma equipment for electronics, MEMS and optics." Nanoindustry Russia, no. 2 (2016): 24–26. http://dx.doi.org/10.22184/1993-8578.2016.64.2.24.26.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

37

Sharma, Mukesh Kumar, Youngjoo Jang, Jongmin Kim, Hyungtae Kim, and Jae Pil Jung. "Plasma Electrolytic Oxidation in Surface Modification of Metals for Electronics." Journal of Welding and Joining 32, no. 3 (2014): 27–33. http://dx.doi.org/10.5781/jwj.2014.32.3.27.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

38

Anderson, H. M., and S. B. Radovanov. "Dusty Plasma Studies in the Gaseous Electronics Conference Reference Cell." Journal of Research of the National Institute of Standards and Technology 100, no. 4 (1995): 449. http://dx.doi.org/10.6028/jres.100.034.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

39

Kuzelev, M. V., and A. A. Rukhadze. "Present status of the theory of relativistic plasma microwave electronics." Plasma Physics Reports 26, no. 3 (2000): 231–54. http://dx.doi.org/10.1134/1.952843.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

40

Mercier, A., K. Zehani, G. Chaplier, A. Pasko, V. Loyau, and F. Mazaleyrat. "Spark Plasma Sintering Co-Sintered Monolithic Transformers for Power Electronics." IEEE Transactions on Magnetics 52, no. 5 (2016): 1–4. http://dx.doi.org/10.1109/tmag.2015.2504876.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

41

Kuribara, Kazunori, Taiki Nobeshima, Takehito Kodzasa, Sei Uemura, and Manabu Yoshida. "Atmospheric-pressure plasma oxidation of aluminum for large-area electronics." Journal of Applied Physics 125, no. 21 (2019): 215501. http://dx.doi.org/10.1063/1.5109203.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

42

Lee, Eunha, Taeho Kim, Anass Benayad, HeeGoo Kim, Sanghun Jeon, and Gyeong-Su Park. "Ar plasma treated ZnON transistor for future thin film electronics." Applied Physics Letters 107, no. 12 (2015): 122105. http://dx.doi.org/10.1063/1.4930827.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

43

Norain, Sahari, Buntat Zolkafle, Azman Zulkifli, Nawawi Zainuddin, Abu Bakar Sidik Muhammad, and Irfan Jambak Muhammad. "Structural and Optical properties of Multiwalled Carbon Nanotubes Modified by DBD Plasma at Atmospheric Pressure." TELKOMNIKA Telecommunication, Computing, Electronics and Control 16, no. 1 (2018): 61–68. https://doi.org/10.12928/TELKOMNIKA.v16i1.5945.

Повний текст джерела

Анотація:

Structure, chemical, and physical properties of Multiwalled Carbon Nanotubes (MWCNTs) after modification by dielectric barrier discharge (DBD) at atmospheric pressure is investigated using Transmission Electron Microscopy (TEM), Raman and Uv-vis-NIR spectroscopy. Effects of plasma treatment time on MWCNTs are analyzed. TEM result shows that during the short period of plasma treatment time of 5 minutes, the tube surface experienced a few damages. With increase in plasma treatment time, the tube surface is damaged to a certain extent. Intensity ratio, ID/IG through Raman analysis shows a good ag

Стилі APA, Harvard, Vancouver, ISO та ін.

44

Miao, Qiang, Cai E. Cui, Jun De Pan, and Ping Ze Zhang. "CrN Coating on Magnesium Alloy AZ91 by Arc-Glow Plasma Depositing Process." Key Engineering Materials 353-358 (September 2007): 1789–92. http://dx.doi.org/10.4028/www.scientific.net/kem.353-358.1789.

Повний текст джерела

Анотація:

Magnesium alloys exhibit great application potential in industries such as automotive, electronics, aerospace and others. But poor wear resistance and corrosion resistance have restricted their actual uses. In this study, a CrN film had been prepared on magnesium alloy AZ91 by arc-glow plasma depositing. The composition and microstructure of the coating had been analyzed by X-ray diffraction (XRD) and glow discharge spectrum (GDS). The morphology of CrN film has been surveyed through scanning electronic microscopy (SEM) and atom force microscopy (AFM). The wear behavior was investigated throug

Стилі APA, Harvard, Vancouver, ISO та ін.

45

Park, S. H., D. B. Kim, R. G. Lee, and I. J. Son. "Thermal Conductivity and Microstructure of Copper Coated Graphite Composite by Spark Plasma Sintering Process." Archives of Metallurgy and Materials 62, no. 2 (2017): 1303–6. http://dx.doi.org/10.1515/amm-2017-0197.

Повний текст джерела

Анотація:

AbstractThis study focuses on the fabrication of thermal management material for power electronics applications using graphite flake reinforced copper composites. The manufacturing route involved electroless plating of copper in the graphite flake and sintering process are optimized. The microstructures, interface, thermal properties, and relative density of graphite/Cu composites are investigated. The relative density of the composites shows 99.5% after sintering. Thermal conductivities and coefficients of thermal expansion of this composites were 400-480 Wm−1K−1and 8 to 5 ppm k−1, respective

Стилі APA, Harvard, Vancouver, ISO та ін.

46

Chaplinskiy, R. YU, O. D. Volpyan, A. I. Kuzmychov, A. V. Leshchyshyn, and G. N. Veremeychenko. "Application of plasma electronics and photonics to improve ecology of diesel engines." Electronics and Communications 15, no. 3 (2010): 96–100. https://doi.org/10.20535/2312-1807.2010.15.3.306116.

Повний текст джерела

Анотація:

Method of diesel exhaust neutralization with help of the plasma electronic devices is considered. Photonic systems are proposed to use for diagnostic and monitoring of automotive exhaust. Methods of CO neutralization in plasma chemical reactor with help of the surface barrier dielectric discharge and monitoring of diesel exhaust smokiness with help of photonic device on the base of light emitting and photosensitive diodes were successful approbated

Стилі APA, Harvard, Vancouver, ISO та ін.

47

Polushkin, E. A., S. V. Nefed’ev, A. V. Koval’chuk, O. A. Soltanovich, and S. Yu Shapoval. "Hydrogen Plasma under Conditions of Electron-Cyclotron Resonance in Microelectronics Technology." Микроэлектроника 52, no. 3 (2023): 236–39. http://dx.doi.org/10.31857/s0544126923700321.

Повний текст джерела

Анотація:

This paper presents the results of hydrogen electron-cyclotron resonance (ECR) plasma in micro-electronics technology. Its effect on the radiation resistance of the IC and on the quality of the ohmic contact during the formation of UBM metallization is demonstrated. The devices obtained with the use of plasma ECR and without it are analyzed.

Стилі APA, Harvard, Vancouver, ISO та ін.

48

Pappas, Daphne, Sebastian Guist, and Dhia Ben Salem. "Plasma Surface Engineering: An Enabling Technology Designed to Clean and Protect Printed Circuit Boards." International Symposium on Microelectronics 2020, no. 1 (2020): 000197–200. http://dx.doi.org/10.4071/2380-4505-2020.1.000197.

Повний текст джерела

Анотація:

Abstract Long term reliability and performance of printed circuit boards (PCBs) are strongly affected by the presence of surface contaminants from the manufacturing and assembly processes. Flux and solder residue, dust particles, oils and greases are often found on the assembled boards and can inhibit the successful application of conformal coatings that are used to protect the electronic components. Surface contaminants can cause coating delamination, dendritic growth, electromigration, corrosion and result in compromised coatings. In the first part of this paper, the fundamental mechanism of

Стилі APA, Harvard, Vancouver, ISO та ін.

49

Kartashov, I. N., and M. V. Kuzelev. "Radiative Surface Waves in Layered Plasma–Dielectric Structures and Prospects of Their Application in Plasma Microwave Electronics." Plasma Physics Reports 47, no. 5 (2021): 453–64. http://dx.doi.org/10.1134/s1063780x21060088.

Повний текст джерела

Анотація:

Abstract Surface waves in layered systems consisting of material media with different frequency dispersions are considered: dielectric–plasma–vacuum, vacuum–plasma–plasma, and dielectric–vacuum–plasma. It is shown that in such systems, one of the surface waves can be radiative into a medium that does not form an interface for the surface wave under consideration, in view of which the wave becomes decaying. In the dielectric–vacuum–plasma system, there is only one surface wave localized at the vacuum–plasma interface, which is radiative into the dielectric in a certain region of wavenumbers wit

Стилі APA, Harvard, Vancouver, ISO та ін.

50

KÖNIGSTEIN, T., O. KARGER, G. PRETZLER, J. B. ROSENZWEIG, and B. HIDDING. "Design considerations for the use of laser-plasma accelerators for advanced space radiation studies." Journal of Plasma Physics 78, no. 4 (2012): 383–91. http://dx.doi.org/10.1017/s0022377812000153.

Повний текст джерела

Анотація:

AbstractWe present design considerations for the use of laser-plasma accelerators for mimicking space radiation and testing space-grade electronics. This novel application takes advantage of the inherent ability of laser-plasma accelerators to produce particle beams with exponential energy distribution, which is a characteristic shared with the hazardous relativistic electron flux present in the radiation belts of planets such as Earth, Saturn and Jupiter. Fundamental issues regarding laser-plasma interaction parameters, beam propagation, flux development, and experimental setup are discussed.

Стилі APA, Harvard, Vancouver, ISO та ін.

Ми пропонуємо знижки на всі преміум-плани для авторів, чиї праці увійшли до тематичних добірок літератури. Зв'яжіться з нами, щоб отримати унікальний промокод!