Дисертації з теми "Semiconductor II-VI"
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1
Graham, Timothy Carl Maxwell. "Spectroscopy of II-VI semiconductor quantum dots." Thesis, Heriot-Watt University, 2006. http://hdl.handle.net/10399/103.
2
Claybourn, M. "Transient spectroscopy of II-VI semiconductors." Thesis, Durham University, 1985. http://etheses.dur.ac.uk/9298/.
Анотація:
DLTS, ODLTS and DLOS have been used to characterise the main deep level trapping centres in some II-VI semiconductors; these were single crystal CdS, (ZnCd)S, CdSe, CdTe and ZnS, and polycrystalline CdS films. Undoped, single crystal CdS contained four electron traps as detected by DLTS, at 0.29eV, 0.41eV, 0.61eV and 0.74eV below the conduction band (CB). The first two were observed in all samples and were due to native defects. The two states of highest energy were found only in material that had been annealed in S or Cd vapours. The 0.61ev level could be photoinduced by illumination at photon energies greater than about 1eV. It decayed in the dark with an activation energy of 0.25eV. The 0.61eV and 0.74eV centres were associated with electrically active extended defects (subgrain boundaries Such samples had dislocation densities of about 10(^10) cm(^-2). Copper was found to be a residual impurity in CdS. It produced two deep hole traps resulting from a crystal field splitting of the Cu d(^9) state. They were detected by ODLTS and DLOS and were found at 0.35eV and 1.lev above the valence band (VB).Introduction of the isoelectronic impurity tellurium into CdS induced a hole repulsive centre at 0.21eV above the VB. This is thought to be an inportant radiative recombination centre. The main electron trap in CdS at 0.41eV was found to shift to higher energy with incorporation of Zn. Replacement of 20% of the Cd with Zn shifted the energy to 0.63eV. The level appeared fixed to the VB and had a similar functional dependence on composition as the band gap. The activation energies of the copper centres observed in CdS remained unchanged with incorporation of Zn up to the composition (^Zn)0.45 (^cd)0.55(^s) showed that the crystal field splitting was constant and that these levels were also pinned to the VB. During the fabrication process of the (ZnCd)S/Cu(_2)S solar cell, a deep level was induced at about 1.2eV below the CB. This is thought to be a recombination centre and one of the contributory factors to the reduction observed in the current collection efficiency of these devices. Polycrystalline CdS films were prepared by silk screen printing (SP) and evaporation. The SP films were annealed at various times and temperatures to improve the crystallinity of the layers. At 640C for 1hr, deep states at 0.16eV and 0.48eV were detected. The levels disappeared when annealed at 670C-700C and a new level was observed at 0.13eV. CdS/Cu(_2)S heterojunctions were prepared on the material sintered at 670C; this induced a further trapping level at 1.1eV and one that was poorly resolved. Copper diffused into the CdS during the fabrication of the device so the states associated with copper were detected at 0.35eV and 1.1eV, The evaporated CdS layers showed that the defect signature was sensitive to the type of substrate. Using Ag instead of the usual SnO(_x), deep states were induced at 0.48eV and 0.98eV below the CB. These Ag-associated impurity centres prevent the indiffusion of Cu during the optimising heat treatment of the CdS/Cu(_2)S heterojunction. This maintains the stoichicmetry of the Cu(_2)S layer, thereby, preventing degradation of the devices. CdSe and copper doped CdSe were found to contain several important defect centres: a native sensitising centre (0.64eV from the VB), a class I recombination centre (0.9eV from the CB), a copper impurity centre (0.2eV from the CB) and two native defects (0.16eVand 0.45eV from the CB). n-type CdTe grown by the Piper-Polich technique contained6 electron traps at 0.15eV, 0.21eV, 0.40eV, 0.47eV, 0.53eV and 0.63eV. Their presence was shown to be dependent upon the method of growth of the crystal by comparing with material grown by other techniques. One or more of these states were thought to be due to extended defects or Te precipitates. Low resistivity ZnS contained two deep electron traps at 0.25eV and O.50eV as detected by DLTS. In addition DLOS showed the presence of four further states at 1.25eV, 1.37eV, 1.89eV and 2.19eV below the CB. The first two are thought to be the strong luminescence centres observed by other workers.
3
Rueda-Fonseca, Pamela. "Magnetic quantum dots in II-VI semiconductor nanowires." Thesis, Université Grenoble Alpes (ComUE), 2015. http://www.theses.fr/2015GRENY015/document.
Анотація:
Dans ce travail de thèse a été développé et étudié un nouveau type d'objet semiconducteur magnétique : des boîtes quantiques de CdMnTe insérées dans des nanofils de ZnTe/ZnMgTe constituant une structure de type cœur-coquille. L'objectif était d'étudier la croissance par épitaxie par jets moléculaires et les propriétés fondamentales de ces hétéro-structures complexes. Dans ce but deux aspects principaux ont été abordés : i) la qualité et le contrôle des propriétés structurales, électroniques et magnétiques de ces objets, grâce à une maîtrise de leur croissance et ii) l'obtention d'informations quantitatives locales sur la composition chimique de ces nanostructures inhomogènes. Pour atteindre ces objectifs, nous avons divisé notre étude en quatre étapes. La première étape de ce travail a été concentrée sur l'étude quantitative de la formation des particules d'or servant de catalyseurs à la croissance des nanofils. La seconde étape a porté sur l'analyse des mécanismes de croissance et des paramètres gouvernant la croissance des fils de ZnTe. En particulier deux types de fils ont été observés : des fils cylindriques de structure wurtzite et des fils coniques de structures zinc-blende. Un modèle de croissance guidée par la diffusion a été utilisé pour rendre compte de certains des résultats quantitatifs présentés dans cette partie. La troisième étape a concerné l'insertion de boîtes quantiques de CdMnTe dans des nanofils de structure cœur-coquille ZnTe/ZnMgTe. Une étude préalable des paramètres pertinents influençant les propriétés magnéto-optiques de ces objets, tels que le confinement de la boîte quantique, l'incorporation du Mn et l'anisotropie de contrainte créée par la structure, a été menée. La quatrième et dernière étape de ce travail a porté sur l'interprétation quantitative de mesures d'analyse dispersive en énergie effectuées sur des nanofils de structure cœur-multicoquille. Un modèle géométrique a été proposé, permettant de retrouver la forme, les dimensions et la composition chimique des boîtes quantiques et des coquilles. Cette étude a été couplée à des mesures de caractérisation telles que la cathodo-luminescence, la micro-photo-luminescence et la spectroscopie magnéto-optique effectuées sur le même nanofilIn this PhD work a novel type of magnetic semiconductor object has been developed: Cd(Mn)Te quantum dots embedded in ZnTe/ZnMgTe core-shell nanowires. The goal was to investigate the growth, by molecular beam epitaxy, and the fundamental properties of these complex heterostructures. For that purpose, two main issues were addressed: i) gaining control of the structural, electronic and magnetic properties of these quantum objects by mastering their growth; and ii) obtaining quantitative local knowledge on the chemical composition of those non-homogeneous nanostructures. To tackle these topics, our research was divided into four stages. The first stage was devoted to perform a quantitative study of the formation process of the Au particles that catalyze the growth of nanowires. The second stage involved the analysis of the mechanisms and parameters governing the growth of ZnTe nanowires. In particular, two different types of nanowires were found: cone-shaped nanowires with the zinc-blende crystal structure and cylinder-shaped nanowires with the hexagonal wurtzite structure. A diffusion-driven growth model is employed to fit some of the quantitative results presented in this part. The third stage focused on the insertion of pure CdTe quantum dots containing Mn ions in the core-shell nanowires. An initial study of the relevant parameters influencing the magneto-optical properties of these objects, such as the quantum dot confinement, the Mn incorporation, and the strain anisotropy, was performed. The four and last stage of this work concerned the quantitative interpretation of Energy-Dispersive X-ray spectroscopy measurements performed on single core-multishell nanowires. A geometrical model was proposed to retrieve the shape, the size and the local composition of the quantum dot insertions and of the multiple layers of the heterostructures. This study was coupled to other complementary characterization measurements on the same nanowire, such as cathodo-luminescence, micro-photo-luminescence and magneto-optical spectroscopy
4
Zhao, Lijuan. "Chemical syntheses and characterizations of II-VI semiconductor nanocrystals /." View abstract or full-text, 2007. http://library.ust.hk/cgi/db/thesis.pl?PHYS%202007%20ZHAO.
5
Luo, Ming. "Transition-metal ions in II-VI semiconductors ZnSe and ZnTe /." Morgantown, W. Va. : [West Virginia University Libraries], 2006. https://eidr.wvu.edu/etd/documentdata.eTD?documentid=4630.
Анотація:
Thesis (Ph. D.)--West Virginia University, 2006.Title from document title page. Document formatted into pages; contains xiv, 141 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 135-141).
6
Sugunan, Abhilash. "Fabrication and Photoelectrochemical Applications of II-VI Semiconductor Nanomaterials." Doctoral thesis, KTH, Funktionella material, FNM, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-95410.
Анотація:
In this work we investigated fabrication of semiconductor nanomaterials and evaluated their potential for photo-chemical and photovoltaic applications. We investigated different II-VI semiconductor nanomaterial systems; (i) ZnO oriented nanowire arrays non-epitaxially grown from a substrate; and (ii) colloidal CdE (E=Te,Se,S) quantum structures synthesized by solution-based thermal decomposition of organo-metallic precursors. We have studied the synthesis of vertically aligned ZnO nanowire arrays (NWA), by a wet chemical process on various substrates. We have extended this method wherein nanofibers of poly-L-lactide act as a substrate for the radially oriented growth of ZnO nanowires. By combining the large surface area and the flexibility of the PLLA-ZnO hierarchical nanostructure we have shown the proof-of-principle demonstration of a ‘continuous-flow’ water treatment system to decompose known organic pollutants in water, as well as render common waterborne bacteria non-viable. We have studied synthesis of colloidal quantum dots (QD), and show size, morphology and composition tailored nanocrystals for CdE (E=S, Se, Te) compositions. We have studied the influence of crystal growth habits of the nanocrtsyals on the final morphology. Furthermore we have synthesized core-shell, CdSe-CdS QDs with spherical and tetrahedral morphologies by varying the reaction conditions. We show that these core-shell quantum dots show quasi-type II characteristics, and demonstrate with I-V measurements, the spatial localization of the charge carriers in these hetero-nanocrystals. For this purpose, we developed hybrid materials consisting of the core-shell quantum dots with electron acceptors (ZnO nanowires) and hole acceptors (polymeric P3HT nanofibers). In addition we have also compared the synthesis reaction when carried out with conventional heating and microwave-mediated heating. We find that the reaction is enhanced, and the yield is qualitatively better when using microwave induced heating.QC 20120525
7
Shahid, Robina. "Green Chemical Synthesis of II-VI Semiconductor Quantum Dots." Doctoral thesis, KTH, Funktionella material, FNM, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-104980.
Анотація:
Nanotechnology is the science and technology of manipulating materials at atomic and molecular scale with properties different from bulk. Semiconductor QDs are important class of nanomaterials with unique physical and chemical properties owing to the quantum confinement effect. Size dependent optical properties make research on semiconductor QDs more attractive in the field of nanotechnology. Semiconductor QDs are usually composed of combination of elements from groups II–VI, III–V, or IV–VI of the periodic table. Group II-VI semiconductor QDs (ZnS, ZnSe, ZnO, CdSe, CdS) are most extensively studied systems, having bandgap which can be engineered through the variation of the material composition and size. Most common QDs are made of CdE (E=S, Se, Te) which are toxic. Recent environmental regulations restrict the use of toxic metals and therefore QDs containing nontoxic metals such as Zn are of great importance. The chemical synthesis of QDs involves different methods. Usually high temperature thermal decomposition of organometallic compounds in high boiling point organic solvents is used which needs long reaction time and involves complex synthesis procedures. New simpler and efficient synthetic routes with alternative solvents are required. Recently the synthesis of non-toxic QDs using green chemical routes is a promising approach receiving increasing attention. The aim of this Thesis is to develop novel routes for synthesis of semiconductor QDs employing green nanomaterial synthesis techniques. Therefore, in this work, we developed different green chemical routes mainly for the synthesis Zn-based QDs. Low temperature synthesis routes were developed for the synthesis of ZnS and ZnO QDs. Microwave irradiation was also used as efficient heating source which creates numerous nucleation sites in the solution, leading to the formation of homogeneous nanoparticles with small size and narrow size distribution. Different polar solvents with high MW absorption were used for synthesis of ZnS QDs. We also introduced ionic liquids as solvents in the synthesis of ZnS QDs using microwave heating. ILs are excellent reaction media for absorbing microwaves and are recognized as ‘green’ alternative to volatile and toxic organic solvents. For ZnS systems, the QDs produced by different methods were less than 5 nm in size as characterized by high-resolution transmission electron microscopy (HR-TEM). Selected area electron diffraction (SAED) patterns revealed that ZnS QDs synthesized by low temperature synthesis technique using conventional heating are of cubic crystalline phase while the QDs synthesized by using MW heating are of wurtzite phase. The optical properties were investigated by UV-Vis absorption spectrum and show a blue shift in absorption as compared to bulk due to quantum confinement effect. The photoluminescence (PL) spectra of ZnS QDs show different defect states related emission peaks and depend on different synthesis methods, high bandedge related emission is observed for ZnS QDs synthesized by using ionic liquids. ZnO QDs synthesized by low temperature route were found to be less than 4 nm in size and also show a blue shift in their absorption. The PL spectrum show bandedge related emission which is blue shifted compared with bulk with no emission originating from surface defect levels. The results show that QDs are of high crystalline quality with narrow size distribution. A comparative study of using conventional and MW heating in the synthesis of CdSe QDs was performed. The reactions involving microwave heating showed enhanced rates and higher yields. The developed methods involve all principles for green nanomaterials synthesis i.e. design of safer nanomaterials, reduced environmental impact, waste reduction, process safety, materials and energy efficiency.QC 20121115
8
Pawlis, Alexander. "Development and investigation of II-VI semiconductor microcavity structures." [S.l. : s.n.], 2003. http://deposit.ddb.de/cgi-bin/dokserv?idn=971579598.
9
Lee, Hyeokjin. "Synthesis and characterization of colloidal II-VI semiconductor nanorods." [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0012984.
10
Sugunan, Abhilash. "Photochemical and Photoelectric Applications of II-VI Semiconductor Nanomaterials." Licentiate thesis, KTH, Functional Materials, FNM, 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-12808.
Анотація:
In this work we investigated fabrication of semiconductor nanomaterials and evaluated their potential for photo-chemical and photovoltaic applications. We investigated two different II-VI semiconductor nanomaterial systems; (i) ZnO oriented nanowire arrays non-epitaxially grown from a substrate; and (ii) colloidal CdTe nanotetrapods synthesized by solution-based thermal decomposition of organo-metallic precursors. In both the cases our main focus has been optimizing material synthesis for improving potential applications based on photon-electron interactions.
We have studied the synthesis of vertically aligned ZnO nanowire arrays (NWA), by a wet chemical process on various substrates. The synthesis is based on epitaxial growth of ZnO seed-layer on a substrate in a chemical bath consisting of an aqueous solution of zinc nitrate and hexamethylenetetramine (HMT). We have suggested an additional role played by HMT during the synthesis of ZnO nanowire arrays. We have also extended this synthesis method to fabricate hierarchical nanostructures of nanofibers of poly-L-lactide acting as a substrate for the radially oriented growth of ZnO nanowires. The combination of high surface area of the nanofibrous substrate with the flexibility of the PLLA-ZnO hierarchical nanostructure enabled the proof-of-principle demonstration of a ‘continuous-flow’ water treatment system that could effectively decompose single and combination of known organic pollutants in water, as well as render common waterborne bacteria nonviable.
We have studied another chemical synthesis that is commonly used for size controlled synthesis of colloidal quantum dots, which was modified to obtain anisotropic nanocrystals mainly for CdE (E=S, Se, Te) compositions. In this work we demonstrate by use of oleic acid (instead of alkylphosphonic acids) it is possible to synthesize CdTe and CdSe nanotetrapods at much lower temperatures (~180 ºC) than what is commonly reported in the literature, with significantly different formation mechanism in the low-temperature reaction.
Finally, we have performed preliminary photoconduction measurements with CdTe nanotetrapods using gold ‘nanogap’ electrodes fabricated in-house, and obtain up to 100 times enhancement in current levels in the I–V measurements under illumination with a white light source.
QC20100607
11
Tang, Xiaodong. "MBE growth and characterization of II-VI semiconductor materials." Thesis, Heriot-Watt University, 2003. http://hdl.handle.net/10399/416.
12
Yuan, Chunze. "The Study of II-VI Semiconductor Nanocrystals Sensitized Solar Cells." Licentiate thesis, KTH, Teoretisk kemi och biologi, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-93752.
Анотація:
Semiconductor nanocrystals, also referred to as quantum dots (QDs), have been the focus of great scientific and technological efforts in solar cells, as a result of their advantages of low-cost, photostability, high molar extinction coefficients and size-dependent optical properties. Due to the multi-electron generation effect, the theoretically maximum efficiency of quantum dots-sensitized solar cells (QDSCs) is as high as 44%, which is much higher than that of dye-sensitized solar cells (DSCs). Thus QDSCs have a clear potential to overtake the efficiency of all other kinds of solar cells. In recent years, the efficiency of QDSCs has been improved very quickly to around 5%. It is however still much lower than that of DSCs. The low efficiency is mostly caused by the high electron loss between electrolyte and electrodes and the lack of an efficient electrolyte. In this thesis, we have been working to enhance the performance of QDSCs with II-VI group nanocrystals by increasing the electron injection efficiency from QDs to TiO2 and developing new redox couples in electrolyte. To increase the electron injection, firstly, colloidal ZnSe/CdS type-II QDs were synthesized and applied for QDSCs for the first time, whose photoelectron and photohole are located on CdS shell and ZnSe core, respectively. The spatial separation between photoelectron and photohole can effectively enhance the charge extraction efficiency, facilitating electron injection, and also effectively expand the absorption spectrum. All these characteristics contribute to the high photon to current conversion efficiency. Furthermore, a comparison between the performances of ZnSe/CdS and CdS/ZnSe QDs shows that the electron distribution is important for the electron injection of the QDs in QDSCs. Secondly, colloidal CdS/CdSe quantum rods (QRs) were applied to a quantum rod-sensitized solar cell (QRSCs) that showed a higher electron injection efficiency than analogous QDSCs. It is concluded that reducing the carrier confinement dimensions of nanocrystals can improve electron injection efficiency of nanocrystal sensitized solar cells. In this thesis, two types of organic electrolytes based McMT-/BMT and TMTU/TMTU-TFO were used for QDSCs. By reducing the charge recombination between the electrolyte and counter electrode, fill factor (FF) of these QDSCs was significantly improved. At the same time, the photovoltages of the QDSCs were remarkably increased. As a result, the overall conversion efficiency of QDSCs based on the new electrolytes was much higher than that with a commonly used inorganic electrolyte. In addition, CdS QDSCs on NiO photoelectrode were studied which shows a n-type photovoltaic performance. This performance is attributed to the formation of a thin Cd metal film before CdS QDs formation on NiO. Since the CB edge of CdS sits between the Fermi level and the CB edge of Cd metal, a much strong electron transfer between Cd and CdS QD is obtained, resulting in the observed n-type photovoltaic performance of these CdS/NiO QDSCs.QC 20120425
13
Tran, Tuyen K. "Optical properties of II-VI semiconductor materials and superlattice structures." Diss., Georgia Institute of Technology, 1996. http://hdl.handle.net/1853/30929.
14
Ten, Sergey Yurevich 1966. "Carrier tunneling in III-V and II-VI semiconductor heterostructures." Diss., The University of Arizona, 1996. http://hdl.handle.net/10150/282245.
Анотація:
This dissertation describes experimental and theoretical studies of carrier tunneling in semiconductor heterostructures and optical properties of neutron irradiated quantum wells. Unambiguous experimental evidence for the dramatic dependence of hole tunneling rates on in-plane momentum in (Ga,In)As/(Al,In)As asymmetric double quantum wells (ADQWs) is presented. Holes generated near the bandedge tunnel on hundred picosecond time scales, whereas holes excited with large excess energy tunnel on subpicosecond time scales. The mechanism responsible for this increase of three orders of magnitude in the hole tunneling rate is nonresonant delocalization of hole wavefunctions by band mixing in the valence band. The carrier density and temperature dependencies of tunneling dynamics are presented. A simple kinetic model developed for electron LO-phonon assisted tunneling shows good qualitative agreement with experimental data. Exciton tunneling in wide gap, II-VI semiconductors was studied using (Zn,Cd)Se/ZnSe ADQW. The strong Coulomb interaction in II-VI semiconductors makes the tunneling process significantly different from that in III-VI ADQWs. Fast (1 ps) and complete recovery of the narrow well exciton absorption was observed after resonant femtosecond pulse excitation. The observed dynamics contradict the theory of independent electron and hole tunneling. The theory of exciton tunneling was developed. Theoretical analysis shows that tunneling of the exciton as a whole entity with the emission of only one LO-phonon is very slow. Instead, the exciton tunnels via an indirect state in a two-step process whose efficiency is dramatically enhanced by the Coulomb interaction. The optical properties of neutron irradiated GaAs/Ga,Al)As multiple quantum wells are investigated. Sharp room temperature exciton features and a 21 ps carrier lifetime are demonstrated in neutron irradiated multiple quantum wells. Carrier lifetime reduction is consistent with the presence of EL2 defects that are efficiently generated by fast neutrons. The influence of the gamma rays accompanying neutron irradiation is discussed. Neutron irradiation provides a straightforward way to control the carrier lifetime in semiconductor heterostructures with minor deterioration of their excitonic properties.
15
Davidson, Ian A. "The growth, processing and characterisation of II-VI semiconductor structures." Thesis, Heriot-Watt University, 2012. http://hdl.handle.net/10399/2662.
Анотація:
The work contained in this thesis focuses on the growth, processing and characterization of II-VI semiconductors for use in opto-electronic devices. Included are efforts to develop both II-VI based distributed Bragg reflectors (DBRs) utilising ZnMgSSe and ZnSe and the epitaxial lift-off (ELO) process pioneered at Heriot-Watt University (HWU). The optical properties of a range of different II-VI compounds (inc. ZnSe, MgS, MnS and ZnMgSSe) are measured using a range of techniques including photoluminescence spectroscopy (PL), optical transmission measurement and spectroscopic ellipsometry. From these measurements, a more accurate value for the bowing parameter of ZnCdSe of 0.37±0.05eV is determined. The effect of lifting structures using an MgS sacrificial layer is investigated by optical microscopy, optical transmission measurement and PL, to allow any structural changes to be determined. The ELO process is also extended to allow structures grown on InP substrates to be lifted by using a magnesium selenide (MgSe) sacrificial layer. The μ-PL measurements of a series of CdSe QDs grown on ZnMgSSe barriers are also reported and compared to previous work on other barrier materials (ZnSe and MgS). The causes of the jitter (spectral diffusion) seen in these samples is also investigated and discussed.
16
Beavis, A. W. "Electronic and optical properties of perfect and imperfect II-VI superlattices." Thesis, University of Newcastle Upon Tyne, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.293542.
17
Horsburgh, Gordon. "MBE growth and characterisation of II-VI semiconductor materials and devices." Thesis, Heriot-Watt University, 1997. http://hdl.handle.net/10399/1256.
18
Chen, Jie. "Spectroscopic Ellipsometry Studies of II-VI Semiconductor Materials and Solar Cells." University of Toledo / OhioLINK, 2010. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1286813480.
19
Bajracharya, Pradeep. "Relaxation Dynamics and Decoherence of Excitons in II-VI Semiconductor Nanostructures." University of Cincinnati / OhioLINK, 2007. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1186757546.
20
Blomfield, Christopher James. "Study of surface modifications for improved selected metal (II-VI) semiconductor based devices." Thesis, Sheffield Hallam University, 1995. http://shura.shu.ac.uk/19362/.
Анотація:
Metal-semiconductor contacts are of fundamental importance to the operation of all semiconductor devices. There are many competing theories of Schottky barrier formation but as yet no quantitative predictive model exists to adequately explain metal-semiconductor interfaces. The II-VI compound semiconductors CdTe, CdS and ZnSe have recently come to the fore with the advent of high efficiency photovoltaic cells and short wavelength light emitters. Major problems still exist however in forming metal contacts to these materials with the desired properties. This work presents results which make a significant contribution to the theory of metal/II-VI interface behaviour in terms of Schottky barriers to n-type CdTe, CdS and ZnSe. Predominantly aqueous based wet chemical etchants were applied to the surfaces of CdTe, CdS and ZnSe which were subsequently characterised by X-ray photoelectron spectroscopy. The ionic nature of these II-VI compounds meant that they behaved as insoluble salts of strong bases and weak acids. Acid etchants induced a stoichiometric excess of semiconductor anion at the surface which appeared to be predominantly in the elemental or hydrogenated state. Alkaline etchants conversely induced a stoichiometric excess of semiconductor cation at the surface which appeared to be in an oxidised state. Metal contacts were vacuum-evaporated onto these etched surfaces and characterised by current-voltage and capacitance-voltage techniques. The surface preparation was found to have a clear influence upon the electrical properties of Schottky barriers formed to etched surfaces. Reducing the native surface oxide produced near ideal Schottky diodes. An extended study of Au, Ag and Sb contacts to [mathematical formula] substrates again revealed the formation of several discrete Schottky barriers largely independent of the metal used; for [mathematical formula]. Deep levels measured within this study and those reported in the literature led to the conclusion that Fermi level pinning by native defects is a dominant mechanism in Schottky barrier formation in these systems.
21
Urbaszek, Bernhard. "Fundamental studies of excitonic properties in II-VI semiconductors." Thesis, Heriot-Watt University, 2001. http://hdl.handle.net/10399/540.
22
Brown, Graeme. "Time-resolved ultrafast spectroscopy of wide-gap II-VI semiconductor quantum wells." Thesis, Heriot-Watt University, 2001. http://hdl.handle.net/10399/502.
23
Papageorgiou, Georgios. "Ultrafast nonlinear optical phenomena in wide-bandgap II-VI semiconductor quantum wells." Thesis, Heriot-Watt University, 2004. http://hdl.handle.net/10399/2026.
24
Kim, Jungtaek. "Electron-nuclear spin control and carrier spin dynamics in II-VI semiconductor." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät, 2016. http://dx.doi.org/10.18452/17524.
Анотація:
Diese Dissertation besteht aus zwei Teilen von Studien. Der erste Teil demonstriert die Steuerung der Elektron-Kern-Spin-Systems in II-VI Halbleiter Quantum Dots (QDs) durch elektrische Ströme über Mikrospulen. Mikrometer-große Leiterschleifen sind auf der Oberseite von Heterostrukturen mit geladenen CdSe/ZnS QDs hergestellt worden. Eine Strominjektion erzeugt magnetische Felder im Bereich von einige 10 mT, welche stark genug sind, um die Hyperfeinwechselwirkung in CdSe QDs modulieren zu können. Der Durchmesser des Spulen im Mikrometer-Bereich ermöglicht die Generation von schnellen Feld transienten im Bereich von wenigen ns. Mit diesen Vorteilen der Mikrospulen werden die Steuerungs des Spins der residenten Elektronen sowie das Auslesen des Kernspinzustandes durch elektrische Impulse nachgewiesen. Der zweite Teil befasst sich mit der Ladungsträger-Spindynamik in ZnO Quantum Well (QW) Strukturen und Epitaxieschichten, die mittels des optischen Übergang von negativ geladenen Exzitonen X− beziehungsweise des am neutralen Donator gebunden Exziton D0X untersucht werden. Der Loch-Spin kann direkt über die zirkular polarisierten Photolumineszenz der beiden Komplexe zurückverfolgt werde. Die Spin-Relaxationszeit von QW und Epiplyer verfolgt werden. Der Spin des Donatorelektronens wird über die Ausbleichung des Spin-selektive Anregungprozesses nachgewiesen. Es werden longitudinale Loch-Spinrelaxationszeiten von 80 bis 140 ps für D0X und X− gefunden. Deutlich längere longitudinalen Elektronen-Spin-Relaxationszeiten in Bereich von mehreren 100 ns werden gefunden, wenn die Hyperfeinwechselwirkung durch ein geeignetes externes Magnetfeld unterdrückt wird. Eine Feldstärke von 2 mT ist groß genug. Dies zeigt den extrem kleinen Wert des Overhauser-Feldes in ZnO auf, der durch die sehr begrenzte Anzahl von magnetischen Kernen in Wechselwirkung mit dem Elektronen innerhalb des Volumens des Donators verursacht wird.This work is composed of two parts of studies. The first part represents an electron-nuclear spin control in II-VI semiconductor quantum dots (QDs) by electrical currents via micro coils. Micrometer single turn coils are fabricated on top of heterostructures with charged CdSe/ZnSe QDs. Current injection creates magnetic fields in the range of some 10 mT which is strong enough to modulate the hyperfine interaction in CdSe. The micrometer-range diameter of coil allows for generation of fast field transient in the range of few ns. Using these advantages of micro coils, local control of the resident electron spin as well as read out of the nuclear spin state are demonstrated by electrical pulses. The second part presents charged carrier spin dynamics in ZnO quantum wells and epilayers using the optical transition of the negatively charged exciton X− and the neutral donor bound exciton D0X, respectively. The hole spin can be directly traced by the circular polarized photoluminescence of both complexes. The spin relaxation of the resident electrons and donor electrons is accessed via the bleaching of the spin selective excitation process. Longitudinal hole spin relaxation times of 80 and 140 ps are found for D0X and X−, respectively. Much longer longitudinal electron spin relaxation times in the several 100 ns range are uncovered if the hyperfine interaction is suppressed by a proper external magnetic field. A field strength of 2 mT is large enough proving that the extremely small value of the Overhauser field in ZnO caused by the very restricted number of magnetic nuclei interacting with the electron inside the donor volume.
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Hall, Ralph Stephen. "Photocapacitance studies of transition metal related deep levels in III-V and II-VI semiconducters." Thesis, University of St Andrews, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.329476.
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Jiang, Feng. "Ligand Controlled Growth of Aqueous II-VI Semiconductor Nanoparticles and Their Self-Assembly." Diss., The University of Arizona, 2013. http://hdl.handle.net/10150/311311.
Анотація:
Colloidal semiconductor nanoparticles (NPs) contain hundreds to thousands of atoms in a roughly spherical shape with diameters in the range of 1-10 nm. The extremely small particle size confines electron transitions and creates size tunable bandgaps, giving rise to the name quantum dots (QDs). The unique optoelectronic properties of QDs enable a broad range of applications in optical and biological sensors, solar cells, and light emitting diodes. The most common compound semiconductor combination is chalcogenide II-VI materials, such as ZnSe, CdSe, and CdTe. But III-V and group IV as well as more complicated ternary materials have been demonstrated. Coordinating organic ligands are used to cap the NP surface during the synthesis, as a mean of protecting, confining, and separating individual particles. This study investigated the impact of the ligand on particle growth and self-assembly into hierarchical structures. ZnSe QDs were synthesized using an aqueous route with four different thiol ligands, including 3-mercaptopropionic acid (MPA), thioglycolic acid (TGA), methyl thioglycolate (MTG), and thiolactic acid (TLA). The particle growth was monitored as a function of reaction time by converting the band gaps measured using UV-vis spectroscopy into particle sizes. A kinetic model based on a diffusion-reaction mechanism was developed to simulate the growth process. The growth data were fit to this model, yielding the binding strength in the order TLA < MTG ≈ TGA < MPA. This result showed the relationship between the QD growth rates and the chemical structures of the ligands. Ligands containing electron-withdrawing groups closer to the anchoring S atom and branching promoted growth, whereas longer, possibly bidendate, ligands retarded it. Removing TGA ligands from the surface of CdTe QDs in a controlled manner yielded new superstructures that were composed of either intact or fused particles. Purifying as-synthesized QDs by precipitating them using an anti-solvent removed most of the free ligand in solution. Aging this purified QD suspension for a week caused self-assembly of QDs into nanoribbons. The long time needed for self-assembly was due to the slow equilibrium between the ligands on QD surface and in solution. Accelerating the approach to equilibrium by diluting purifed CdTe QDs with organic solvents triggered rapid self-assembly of superstructures within a day, forming various nanostructures from nanoribbons to nanoflowers. The type of nanostructures that formed was determined by the solvation of TGA in the trigger solvent. Extracting the smallest portion of TGA in methanol promoted vectorial growth into ribbons consistent with dipole-dipole attractive and charge-charge repulsive interactions. Removing more of the TGA layer in IPA caused the dots to fuse into webs containing clustered ribbons and branches, and the directional nature of the superstructure was lost. Completely deprotecting the surface in acetone promoted photochemical etching and dissolved the QDs, yielding
ower-like structures composed of CdS. Nanocrystal (NC) growth mediated by a ligand was also studied in the organic synthesis of FeS₂ nanocubes. Oleylamine was used not only as the ligand but also the solvent and reductant during the reaction. A one hour reaction between iron (II) chloride and elemental sulfur in oleylamine at 200 ℃ and a S to Fe ratio of 6 yielded phase pure pyrite cubes with dimensions of 87.9±14.1 nm. X-ray diffraction (XRD) spectra and Raman peaks for pyrite at 340, 375, and 426 cm⁻¹ confirmed phase purity. Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS) results showed that the oleylamine remained on the FeS₂ surface as a ligand. The reaction mechanism includes the production of pyrrhotite Fe₁₋ᵪS (0≤x<0.5) via reduction of S⁰ to S²⁻ by oleylamine and the oxidation of pyrrhotite to pyrite with remaining S⁰.
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Dagnelund, Daniel. "Magneto-optical studies of dilute nitrides and II-VI diluted magnetic semiconductor quantum structures." Doctoral thesis, Linköpings universitet, Funktionella elektroniska material, 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-54695.
Анотація:
This thesis work aims at a better understanding of magneto-optical properties of dilute nitrides and II-VI diluted magnetic semiconductor quantum structures. The thesis is divided into two parts. The first part gives an introduction of the research fields, together with a brief summary of the scientific results included in the thesis. The second part consists of seven scientific articles that present the main findings of the thesis work. Below is a short summary of the thesis. Dilute nitrides have been of great scientific interest since their development in the early 1990s, because of their unusual fundamental physical properties as well as their potential for device applications. Incorporation of a small amount of N in conventional Ga(In)As or Ga(In)P semiconductors leads to dramatic modifications in both electronic and optical properties of the materials. This makes the dilute nitrides ideally suited for novel optoelectronic devices such as light emitting devices for fiber-optic communications, highly efficient visible light emitting devices, multi-junction solar cells, etc. In addition, diluted nitrides open a window for combining Si-based electronics with III-V compounds-based optoelectronics on Si wafers, promising for novel optoelectronic integrated circuits. Full exploration and optimization of this new material system in device applications requires a detailed understanding of their physical properties. Papers I and II report detailed studies of effects of post-growth rapid thermal annealing (RTA) and growth conditions (i.e. presence of N ions, N2 flow, growth temperature and In alloying) on the formation of grown-in defects in Ga(In)NP. High N2 flow and bombardment of impinging N ions on grown sample surface is found to facilitate formation of defects, such as Ga interstitial (Gai) related defects, revealed by optically detected magnetic resonance (ODMR). These defects act as competing carrier recombination centers, which efficiently decrease photoluminescence (PL) intensity. Incorporation of a small amount of In (e.g. 5.1%) in GaNP seems to play a minor role in the formation of the defects. In GaInNP with 45% of In, on the other hand, the defects were found to be abundant. Effect of RTA on the defects is found to depend on initial configurations of Gai related defects formed during the growth. In Paper III, the first identification of an interfacial defect at a heterojunction between two semiconductors (i.e. GaP/GaNP) is presented. The interface nature of the defect is clearly manifested by the observation of ODMR lines originating from only two out of four equivalent <111> orientations. Based on its resolved hyperfine interaction between an unpaired electronic spin (S=1/2) and a nuclear spin (I=1/2), the defect is concluded to involve a P atom at its core with a defect/impurity partner along a <111> direction. Defect formation is shown to be facilitated by N ion bombardment. In Paper IV, the effects of post-growth hydrogenation on the efficiency of the nonradiative (NR) recombination centers in GaNP are studied. Based on the ODMR results, incorporation of H is found to increase the efficiency of the NR recombination via defects such as Ga interstitials. In Paper V, we report on our results from a systematic study of layered structures containing an InGaNAs/GaAs quantum well, by the optically detected cyclotron resonance (ODCR) technique. By monitoring PL emissions from various layers, the predominant ODCR peak is shown to be related to electrons in GaAs/AlAs superlattices. This demonstrates the role of the SL as an escape route for the carriers confined within the InGaNAs/GaAs single quantum well. The last two papers are within a relatively new field of spintronics which utilizes not only the charge (as in conventional electronics) but also the quantum mechanical property of spin of the electron. Spintronics offers a pathway towards integration of information storage, processing and communications into a single technology. Spintronics also promises advantages over conventional charge-based electronics since spin can be manipulated on a much shorter time scale and at lower cost of energy. Success of semiconductor-based spintronics relies on our ability to inject spin polarized electrons or holes into semiconductors, spin transport with minimum loss and reliable spin detection. In Papers VI and VII, we study the efficiency and mechanism for carrier/exciton and spin injection from a diluted magnetic semiconductor (DMS) ZnMnSe quantum well into nonmagnetic CdSe quantum dots (QD’s) by means of spin-polarized magneto PL combined with tunable laser spectroscopy. By means of a detailed rate equation analysis presented in Paper VI, the injected spin polarization is deduced to be about 32%, decreasing from 100% before the injection. The observed spin loss is shown to occur during the spin injection process. In Paper VII, we present evidence that energy transfer is the dominant mechanism for carrier/exciton injection from the DMS to the QD’s. This is based on the fact that carrier/exciton injection efficiency is independent of the width of the ZnSe tunneling barrier inserted between the DMS and QD’s. In sharp contrast, spin injection efficiency is found to be largely suppressed in the structures with wide barriers, pointing towards increasing spin loss.
28
Khallaf, Hani. "Chemical Bath Deposition of Group II-VI Semiconductor Thin Films for Solar Cells Applications." Doctoral diss., University of Central Florida, 2009. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/2101.
Анотація:
Chemical bath deposition (CBD) is the analog in liquid phase of the well-known chemical vapor deposition technique in the vapor phase. In CBD, deposition of thin films takes place from aqueous solutions at low temperatures by a chemical reaction between dissolved precursors, with the help of a complexing agent. Among all techniques used to grow Group II-VI semiconductors, CBD has the advantage of being a simple, low temperature, and inexpensive large-area deposition technique. So far, its contribution in thin film solar cells industry has been mainly limited to growing n-type CdS and/or ZnS window layers for CdTe-based and CIGS-based solar cells. In this work we first optimize the CBD process of CdS using nitrilotriacetic acid and hydrazine as complexing agents as an alternative to ammonia. We then study the effect of the cadmium precursor on the optical/electrical properties, as well as crystal structure, morphology, and composition of CBD-CdS films. A better understanding of the CBD process of CdS as a whole has been achieved and high quality CBD-CdS films have been obtained. Next, we investigate in-situ doping of CBD-CdS with group III elements, such as B, Al, In, and Ga. The objective is to show that CBD is capable of not only growing CdS but also of doping it to reduce its resistivity and, as a result, facilitate its use in solar cells as well as other optoelectronic device fabrication. A four orders of magnitude drop of film resistivity has been achieved without a significant change in film bandgap, structure, or morphology. Finally, we test the possibility of using CBD to grow transparent conducting oxide (TCO) films, such as Al-doped ZnO films and cadmium stannate films. First, we study CBD of ZnO and later in-situ doping of ZnO using Al. High quality ZnO thin films have been grown using CBD with the help of four different complexing agents. Post heat treatment in argon ambient helped reduce resistivity of CBD-ZnO undoped films to ~ 10-1 Ω-cm. In-situ doping of such films using Al shows promising results. Such films could be an alternative to indium tin oxide (ITO) layers that are commonly used as TCO layers for solar cells. Another approach is to use CBD to grow CdO and SnO2 thin films, with the goal of obtaining Cd2SnO4 by later annealing of these two layers. Cadmium stannate is another TCO candidate that could replace ITO in the near future. We have succeeded in growing CBD-CdO thin films using three different complexing agents. Undoped CBD-CdO films with a resistivity as low as 1.01 x10-2 [omega]-cm and a carrier density as high as 2.59 x 1020 cm-3 have been obtained. SnO2 films have been successfully grown using CBD. Fabrication of Cadmium stannate thin films using CBD is investigated. In summary, our objective to expand the use of CBD beyond just growing CdS and ZnS, and to test the possibility of using it for in-situ doping of group II-VI semiconductors as well as TCO layers fabrication proved to be successful. We believe that this may have a significant impact on solar cells as well as other optoelectronic devices fabrication industry, due to the simplicity and the cost-effectiveness of CBD.Ph.D.
Department of Physics
Sciences
Physics PhD
29
Bradford, Christine Bradford. "MBE growth and characterisation of Zincblende MgS-based II-VI semiconductor material and devices." Thesis, Heriot-Watt University, 2002. http://hdl.handle.net/10399/407.
30
Laura, M. Robinson. "USING TIME-RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY TO EXAMINE EXCITON DYNAMICS IN II-VI SEMICONDUCTOR NANOSTRUCTURES." University of Cincinnati / OhioLINK, 2001. http://rave.ohiolink.edu/etdc/view?acc_num=ucin980259259.
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Gérard, Lionel. "Structures de semiconducteurs II-VI à alignements de bande de type II pour le photovoltaïque." Thesis, Grenoble, 2013. http://www.theses.fr/2013GRENY070.
Анотація:
Ce travail porte sur l'étude d'hétérostructures de semiconducteurs II-VI à alignements de bande de type II, en particulier sous forme de superréseaux. Il s'agit d'un système qui peut être prometteur pour une application photovoltaïque, et c'est dans cette optique qu'est orienté ce travail. Une première partie traite ainsi d'une réflexion conceptuelle sur l'apport des interfaces de type II au photovoltaïque.Nous présentons ensuite une étude sur la croissance de CdSe et ZnTe par épitaxie par jets moléculaires, sur différents substrats. Ces matériaux sont particulièrement intéressants et adaptés pour cette application car ils ont un gap direct, quasiment le même paramètre de maille, un alignement de bandes de type II, et le CdSe une bande interdite compatible avec le spectre solaire. Mais en contrepartie il s'agit de semiconducteurs binaires qui n'ont aucun atome en commun, de sorte que la croissance d'échantillons avec des épaisseurs précises à la monocouche près constitue un vrai défi. Pour cette raison nous avons procédé à une étude fine des interfaces grâce à des analyses de diffraction de rayons X et de microscopie en transmission, qui nous permet de conclure sur la nature chimique des atomes à proximité des interfaces.Vient ensuite une étude poussée de spectroscopie sur les effets des interfaces de type II sur les porteurs de charges, à travers leur énergie et cinétique de recombinaison. Nous avons développé un modèle analytique qui permet d'ajuster précisément toutes les caractéristiques observées en relation avec ces interfaces, et qui témoigne d'un mécanisme de séparation des charges très efficace. Nous montrons par la suite que ces effets observés sont des caractéristiques intrinsèques de toutes les interfaces de type II, indépendamment des matériaux et des structures, et que ceux-ci nous permettent d'extraire avec précision les valeurs des décalages de bandes entre différents matériaux à alignement de type IIThis work focuses on the study of II-VI semiconductor heterostructures with type II band alignments, especially in the form of superlattices. This is a system that can be promising for photovoltaic applications, and my work is presented in this perspective. Thus the first part deals with a conceptual reflection on the contribution of type II interfaces for photovoltaics.In a second step I present a study on the growth of CdSe and ZnTe by molecular beam epitaxy on various substrates. These materials are particularly interesting and suitable for this application because they have a direct bandgap, are almost lattice-matched, present a type II band alignment, and CdSe shows a bandgap compatible with the solar spectrum. But in return these are binary semiconductors which have no atoms in common, so that the growth of samples with specific thicknesses close to the monolayer is challenging. For this reason we conducted a detailed study at the interfaces through analysis of X-ray diffraction and transmission electron microscopy, which allows us to conclude on the chemical nature of the atoms near the interfaces.This is followed by a detailed spectroscopy study on the effects of type II interfaces on the charge carriers through their energy and kinetics of recombination. We have developed an analytical model that allows to precisely adjust all the features observed in relation to these interfaces, and shows a very efficient charge separation mechanism. We show later that these effects are inherent characteristics of all interfaces of type II, regardless of materials and structures, and that they allow us to accurately extract the values of band offsets between different materials with type II band alignments
32
Hundt, Andreas. "Manipulation von Spinzuständen in einzelnen II-VI Halbleiter-Quantenpunkten." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2008. http://dx.doi.org/10.18452/15778.
Анотація:
Halbleiter-Quantenpunkte sind Objekte in der Größenordnung von Nanometern, in denen wenige Ladungsträger in alle drei Raumrichtungen durch eine Potentialbarriere eingesperrt sind. Dies führt zu einer reduzierten Wechselwirkung mit dem Halbleiter-Gitter und zu einer diskreten Zustandsdichte. Die große Polarität der Bindung dazu, dass viele Wechselwirkungen direkt durch Spektroskopie der Photolumineszenz zu beobachten sind, was sie für die Grundlagenforschung attraktiv macht. Die ungleiche Anzahl von Elektronen und Löchern erlaubt die Untersuchung einzelner, ungepaarter Ladungsträger. Mit Hilfe der polarisationsaufgelösten Mikro-PL Spektroskopie werden Spinzustände einzelner QP reproduzierbar untersucht. Im Mittelpunkt stehen dabei Wechselwirkungen der Teilchen untereinander. Über die Anregungsspektroskopie werden höherangeregte Zustände identifiziert und charakterisiert. Die hier auftretenden Austauschwechselwirkungen führen zur Mischung zu Feinstrukturen im Spektrum. Kopplungen im angeregten Lochzustand zeigen die Möglichkeit zur optischen Orientierung des residenten Elektrons auf. Die Spinkonfiguration der Elektronen im Triplettzustand erlaubt es, die Elektron-Loch Austauschwechselwirkungen des Trions zu untersuchen. Der zweite Teil dieser Arbeit befasst sich mit semimagnetischen QP. Hier sorgt die Wechselwirkung mit einer paramagnetischen Umgebung von Manganspins für neue magneto-optische Eigenschaften. Diese zeigen sich auf der Ebene einzelner QP in Form von Linienverbreiterungen durch Spinfluktuationen als auch durch den Riesen-Zeeman-Effekt am QP-Ensemble. Besonderes Augenmerk liegt hier auf dem Einfluss der reduzierten Dimensionalität und der größeren Oberflächen der QP auf die Austauschmechanismen. Die starke Temperaturabhängigkeit der Spinumgebung wird ausgenutzt, um das Spinaufheizen als auch die Spin-Gitter-Relaxationsystematisch zu studieren. Dabei wird die PL der QP als Monitor benutzt.Semiconductor quantum dots are objects on the nanometer scale, where charge carriers are confined in all three dimensions. This leads to a reduced interaction with the semiconductor lattice and to a discrete density of states. In the examined QD in II-VI seminconductor systems the large polar character of the bindings enables to observe particle interactions by spectroscopy of the photo-luminescence, making QD attractive for basic research. An odd number of carriers allows to study the latter in an unpaired state. By using polarization-resolved micro-PL spectroscopy, the spin-states of single, isolated QD can be studied reproducibly. Of special interest are exchange interactions in this few-particle system named trion. By excitation spectroscopy energetically higher states can be identified and characterized. The exchange interactions appearing here lead to state mixing and fine structure patterns in the spectra. Couplings in excited hole states show the way to the optical orientation of the resident electron spin. The spin configuration of the trion triplet state can be used to optically control the resident electron spin. Semimagnetic QD are focused in the second part of this work. The interaction with a paramagnetic environment of manganese spins leads to new magneto-optical properties of the QD. They reveal on a single dot level by line broadening due to spin fluctuations and by the giant Zeeman effect of the dot ensemble. Of special interest in this context is the influence of the reduced system dimension and the relatively larger surface of the system on the exchange mechanisms. The strong temperature dependence of the spin environment is used to systematically study the spin-lattice relaxation. Here, the PL of the QD ensemble monitors the spin temperature. The time constants in the mu range define the range for the incoherent switching of the Mn magnetization.
33
Babocsi, Krisztina. "Characterization of II-VI semiconductor nanostructures by low wavenumber raman- and four-wave-mixing spectroscopy." Doctoral thesis, [S.l. : s.n.], 2005. http://deposit.ddb.de/cgi-bin/dokserv?idn=975014862.
34
Little, Reginald Bernard. "The synthesis and characterization of some II-VI semiconductor quantum dots, quantum shells and quantum wells." Diss., Georgia Institute of Technology, 1999. http://hdl.handle.net/1853/30573.
35
Yan, Shuke. "II-VI Semiconductor Nanowire Array Sensors Based on Piezotronic, Piezo-Phototronic and Piezo-Photo-Magnetotronic Effects." ScholarWorks@UNO, 2018. https://scholarworks.uno.edu/td/2502.
Анотація:
With the rapid progress of nanotechnologies, there are two developing trends for the next generation of sensors: miniaturization and multi-functionality. Device miniaturization requires less power consumption, or even self-powered system. Multi-functional devices are usually based on multi-property coupling effects. Piezoelectric semiconductors have been considered to be potential candidates for self-powered/multi-functional devices due to their piezotronic coupling effect. In this dissertation, ZnO and CdSe nanowire arrays have been synthesized as the piezoelectric semiconductor materials to develop the following self-powered/multi-functional sensors: (1) self-powered gas sensors of ZnO/SnO2, ZnO/In2O3, ZnO/WO3 and CdSe nanowire arrays have been assembled. All these gas sensors are capable of detecting oxidizing gas and reducing gas without any external power supply owing to piezotronic effect which can convert mechanical energies to electrical energy to power the sensors; (2) a self-powered ZnO/ZnSe core/shell nanowire array photodetector has been fabricated. This photodetector is able to detect the entire range of the visible spectrum as well as UV light because of its type II heterostructure. The absolute sensitivity and the percentage change in responsivity of the photodetector were significantly enhanced resulting from the piezo-phototronic effect. The photodetector also exhibited self-powered photodetection behavior; (3) three dimensional nanowire arrays, such as ZnO and ZnO/Co3O4, have been synthesized to investigate piezo-magnetotronic and piezo-photo-magnetotronic effects. Under magnetic field, the magnetic-induced current of ZnO nanowire array decreased as magnetic field increased, and the current difference was magnified by one order of magnitude caused by piezo-magnetotronic effect through applying a stress. In contrast, under UV light illumination, the current response increased with an increment of magnetic field. The current difference was enhanced by at least two orders of magnitude attributed to piezo-photo-magnetotronic effect. Furthermore, ZnO/Co3O4 core/shell structure was employed to further improve the magnetic-induced current difference. This phenomenon projects a potential for multi-functional piezo-magnetotronic and piezo-photo-magnetotronic device development.
36
Bakarezos, Efthimios. "Ultrafast nonlinear optics of wide-gap II-VI quantum wells and polymeric materials." Thesis, Heriot-Watt University, 2000. http://hdl.handle.net/10399/519.
37
Kirmse, Holm. "Transmissionselektronenmikroskopische Untersuchungen von II-VI-Verbindungshalbleitern unterschiedlicher Dimensionierung." Doctoral thesis, [S.l. : s.n.], 2000. http://deposit.ddb.de/cgi-bin/dokserv?idn=962717835.
38
Swenberg, Johanes F. N. McGill T. C. McGill T. C. "Development of wide-bandgap II-VI semiconductor light-emitting device technology based on the graded injector design /." Diss., Pasadena, Calif. : California Institute of Technology, 1995. http://resolver.caltech.edu/CaltechETD:etd-10122007-142152.
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Dooley, Chad Johnathan. "New Nanomaterials for Photovoltaic Applications: A Study on the Chemistry and Photophysics of II-VI Semiconductor Nanostructures." Thesis, Boston College, 2009. http://hdl.handle.net/2345/705.
Анотація:
Thesis advisor: Torsten FiebigThis dissertation examines the chemistry and photophysics of semiconductor quantum dots with the intent of studying their capabilities and limitations as they pertain to photovoltaic technologies. Specifically, experiments are presented detailing the first time-resolved measurements of electron transfer in electronically coupled quantum rods. Electron transfer from the conduction band of CdTe was measured to occur on the 400 fs timescale (kET = 2.5 x 1012 s-1), more than 500x faster than previously believed. Additionally, the direct optical promotion of an electron from the valence band of CdTe was observed, occurring on the timescale of the pump pulse (~50 fs). Based on the determined injection rates, a carrier separation efficiency of > 90% has been calculated suggesting these materials are sufficient for use in solar energy capture applications where efficient carrier separation is critical. To this end, model photovoltaic cells were fabricated, and their power conversion efficiency and photon-to-current generation efficiency characterized. In devices based of CdSe and heteromaterial quantum rods we observed fill-factors on the order of 10-20% though with power conversion efficiencies of < 0.02%. It was discovered that using a high temperature annealing step, while critical to get electrochemically stable photoelectrodes, was detrimental to quantum confinement effects and likely removed any hQR specific capabilities. Additionally, a detailed study on the role of nucleotide triphosphate chemistry in stabilizing emissive CdS nanoparticles is presented. Specifically it was observed that in a neutral pH environment, GTP selectively stabilizes CdS quantum dots with diameters of ~4 nm while the other naturally occurring ribonucleotides do not yield emissive product. The selectivity is dependent on the presence of the nucleophilic N-7 electrons near a triphosphate pocket for Cd2+ complexation as well as an exocyclic amine to stabilize the resulting product particles. However, in an elevated pH environment, the nucleobase specificity is relaxed and all NTPs yield photo-emissive quantum dots with PLQEs as high as 10%
Thesis (PhD) — Boston College, 2009
Submitted to: Boston College. Graduate School of Arts and Sciences
Discipline: Chemistry
40
Kabir, Amin. "Phase coherent photorefractive effect in II-VI semiconductor quantum wells and its application for optical coherence imaging." University of Cincinnati / OhioLINK, 2010. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1282315981.
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Matos, Charlene Regina Santos. "Síntese e caracterização de nanopartículas de semicondutores metálicos do tipo II-VI." Universidade Federal de Sergipe, 2012. https://ri.ufs.br/handle/riufs/3486.
Анотація:
Coordenação de Aperfeiçoamento de Pessoal de Nível SuperiorInorganic nanomaterials are a class of advanced materials, which have been widespread in both science and nanotechnology. The use of nanomaterials in several areas makes nanoscience an interdisciplinary field. Some challenges, such as the type of synthesis and toxicity control should be explored, mainly because those materials can be controlled at the nanometer level by means of the synthesis variables. In this work, we performed the synthesis of cadmium telluride (CdTe) nanoparticles with the surface capped by a mixture of organic thiol stabilizers such as mercaptopropionic acid (MPA), cysteine (CYS), glutathione (GLU), and biopolymer sodium alginate (ALG). Synthesis were performed by two distinct aqueous methods hydrothermal and reflux and the synthesis parameters such as pH and ratio Cd/Te/stabilizer were fixed based on the literature. The colloidal dispersions obtain present remain stable for at least 3 months (time observed so far). Optical absorption spectra of all mixtures of CdTe - stabilizers presented a red shift with increasing synthesis time, and furthermore, the position of this band was at a wavelength below the bulk CdTe (790 nm). The emission spectra in all cases were intense, with little difference between them. The diameter of the particles, calculated from an empirical equation from the of maximum absorption wavelength, were comparable compared to those obtained by X-ray diffraction (XRD) (Scherrer equation) as well as transmission electron microscopy (TEM). The results from the three techniques agreed very well for CdTe via reflux. However for hydrothermal synthesis it was not possible to determine the diameter of the particles by TEM due to morphology of nanostructured aggregates. The crystal structures as obtained by XRD indicating the incorporation of sulfur atoms in the CdTe structure, in agreement to the literature for this type of synthesis. Infrared spectroscopy confirmed the presence of organic stabilizers on the surface of CdTe. The morfology of samples identified by TEM/HRTEM was different depending on the method of syntesis aggregates for the hydrothermal samples and isolated particles for reflux samples so the mechanisms of nucleation and growth were proposed oriented attachment (OA) and Ostwald ripening (OR) for synthesis CdTe-hydrothermal and reflux, respectively.
Os nanomateriais inorgânicos são uma classe de materiais avançados, que vêm sendo difundidos tanto em ciência como em nanotecnologia. O uso destes materiais está localizado em diversas áreas de atuação, fazendo com que tal classe seja interdisciplinar. Alguns desafios como o tipo de síntese e a toxidade devem ser explorados, principalmente porque estes materiais podem ser controlados a nível nanométrico por meio das variáveis de síntese. Neste trabalho, foi realizada a síntese de nanopartículas de Telureto de Cádmio (CdTe) com a superfície coberta pela mistura de estabilizantes orgânicos tióis tais como, ácido mercaptopropiônico (MPA), cisteína (CYS) e glutationa (GLU) e o biopolímero alginato de sódio (ALG). Esta síntese foi realizada por dois métodos aquosos, via hidrotermal e refluxo, e os parâmetros de síntese como pH e relação Cd/Te/estabilizante foram fixos com base na literatura. As dispersões coloidais obtidas apresentaram-se com estabilidade coloidal por pelo menos 3 meses (tempo observado até o momento). Os espectros eletrônicos de absorção óptica de todas as misturas de CdTe-estabilizantes se apresentaram largos, com deslocamento para o vermelho com o aumento do tempo de síntese, e além disso, a posição desta banda estava em comprimento de onda abaixo do CdTe bulk (790 nm), indicando confinamento quântico. Os espectros de emissão em todos os casos foram intensos e com pouca diferença entre os mesmos. Os diâmetros das partículas foram calculados usando-se uma fórmula empírica, a partir do comprimento de onda máximo de absorção e comparado aos resultados obtidos por difratometria de raios X (XRD) (equação de Scherrer) e por microscopia eletrônica de transmissão (TEM). Os resultados das três técnicas corroboram entre si para as amostras de CdTe via refluxo. Contudo, no caso do hidrotermal, não foi possível determinar os diâmetros por TEM porque a morfologia foi de agregados nanoestruturados. As estruturas cristalinas forma obtidas por XRD, indicando a incorporação de átomos de enxofre na estrutura do CdTe, estando de acordo com a literatura para o tipo de síntese. A espectroscopia de infravermelho confirmou a presença dos estabilizantes orgânicos na superfície do CdTe. A morfologia identificada por TEM/HRTEM das amostras sintetizadas pelas duas sínteses foi diferente agregados para a síntese hidrotermal e partículas isoladas para refluxo sendo que os mecanismos proposto para nucleação e crescimento foram o oriented attachment (OA) e o Ostwald ripening (OR) para CdTe-hidrotermal e o CdTe-refluxo, respectivamente.
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Liu, Feng [Verfasser], Dmitrij G. [Akademischer Betreuer] Jakovlev, and Heinz [Akademischer Betreuer] Hövel. "Magneto-optical properties of II-VI semiconductor colloidal nanostructures / Feng Liu. Betreuer: Dmitrij G. Jakovlev. Gutachter: Heinz Hövel." Dortmund : Universitätsbibliothek Dortmund, 2013. http://d-nb.info/1099958261/34.
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Flissikowski, Timur. "Coherence properties of single self-assembled quantum dots." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2005. http://dx.doi.org/10.18452/15178.
Анотація:
Halbleiter Quantenpunkte (QP) standen in den letzten Jahren im Mittelpunkt vieler Forschungsaktivitäten im Bezug auf mögliche Anwendungen im Bereich der Quanteninformationsverarbeitung. Durch das dreidimensional Confinement sind nur diskrete, energetisch stark separierte Zustände in einem QP möglich. Damit sind phasenzerstörende Streuprozesse unwahrscheinlicher und man kann Dekohärenzzeiten erwarten, die nur durch die Lebensdauer der Zustände limitiert sind. Materialbasis dieser Arbeit sind CdSe QP in einer ZnSe Barriere. In dieser Arbeit werden zwei Arten von Kohärenzphenomänen, die das zeitliche Verhalten solcher Quantensysteme beschreiben, mittels optischer Methoden untersucht. Im Falle optischer Kohärenz wechselwirkt ein angeregter Zustand, der strahlend mit einem Grundzustand verbunden ist, mit einem externen elektro-magnetischen Feld. Mittels phasensynchronisierter kohärenter Kontrolle werden biexzitonische und auch erste angeregte Zustände in einzelnen QP untersucht. Im Fall des angeregten Zustandes findet man optische Dephasierungszeiten unterhalb von 10 ps. Für das Biexziton kann nur eine untere Grenze bestimmt werden, die auf einer 10 ps Zeitskala liegt. Das zweite Phenomän ist die Quantenkohärenz (QK), die das Phasengedächtnis zweier Zustände im selben QP vergleicht. In dieser Arbeit wird die QK durch die Analyse von Quantenschwebungen in der Emission des Grundzustandsexzitons in einem einzelnen QP untersucht. Es wurde gefunden, dass es keine messbare Dekohärenz der beiden Unterzustände des Grundzustandsexzitons im Rahmen der strahlenden Lebensdauer von circa 300 ps gibt. Die dritte Gruppe von Experimenten beschäftigt sich mit der longitudinalen Spinrelaxationszeit einzelner Ladungsträger. Die verwendeten Proben ermöglichen den direkten Zugang zur Spindynamik einzelner Löcher. Die Experimente in der Spektral- als auch in der Zeitdomäne lieferten Spinrelaxationszeiten für Löcher von knapp 10 ns.Semiconductor quantum dots (QD) have attracted considerable interest during the past years as possible candidates for quantum information processing. Due to the confinement potential in such structures, the density of states in a single QD is discrete. If the states are well separated in energy the coupling to the environment is expected to be smaller, implying that coherence is maintained during the exciton lifetime. In the present work CdSe in ZnSe QDs are used. Two kinds of coherence phenomena, reflecting the time evolution of such a quantum system, are studied by use of optical methods. In case of optical coherence, an excited state which is radiatively coupled to a ground state interacts with an external electro-magnetic field. The experimental technique of temporal coherent control is applied via a two photon process on the biexciton state and also by a single photon process on the excited state in a single QD. As a result optical coherence times below 10 ps are found for the excited state, while for the biexciton only a lower limit on a 10 ps timescale was elaborated. The second phenomena is quantum coherence and describes the phase memory between two states in the same QD. It is studied in this work by the analysis of the observed quantum beats in the time resolved photoluminescence emission (PL) of the ground state exciton in a single QD. As a result it was found that there is no measurable decoherence between the two substates of the ground state exciton during the exciton lifetime of about 300 ps. In a third group of experiments the longitudinal spin relaxation time is investigated on a single carrier level. The used QD sample contains charged QDs with resident electrons, which provide direct access to the separate spin dynamic of the holes. Different experiments carried out, yielding a longitudinal spin relaxation time for a single hole on a 10 ns timescale.
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Frey, Alexander [Verfasser], and Karl [Akademischer Betreuer] Brunner. "Spin-Dependent Tunneling and Heterovalent Heterointerface Effects in Diluted Magnetic II-VI Semiconductor Heterostructures / Alexander Frey. Betreuer: Karl Brunner." Würzburg : Universitätsbibliothek der Universität Würzburg, 2013. http://d-nb.info/1037311388/34.
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Talapin, Dmitri V. "Experimental and theoretical studies on the formation of highly luminescent II-VI, III-V and core shell semiconductor nanocrystals." [S.l. : s.n.], 2002. http://deposit.ddb.de/cgi-bin/dokserv?idn=964732297.
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Eley, Clive William. "The rational design of photocatalytic semiconductor nanocrystals." Thesis, University of Oxford, 2014. http://ora.ox.ac.uk/objects/uuid:ee29c922-857c-432a-8316-a7e04c822b1d.
Анотація:
This thesis reports the successful rational design of three highly active photocatalytic semiconductor nanocrystal (SNC) systems by exploiting morphology effects and the electronic properties of type II semiconductor heterojunctions. Novel architectures of colloidal SNCs are produced with the aim of suppressing exciton recombination and improving charge extraction for the successful initiation of desirable redox chemistry. Rod-shaped niobium pentoxide Nb2O5 nanocrystals (NCs) are shown to exhibit significantly enhanced activity (10-fold increase in rate constant) relative to spherical-shaped NCs of the same material. The increase is attributed to Nb5+ Lewis acid site rich (001) surfaces, present in higher proportions in the rod morphology, which bind organic substrates from solution resulting in direct interaction with photogenerated charges on the surface of the NC. Building on the insights into morphology-activity dependence, type II semiconductor heterojunctions are exploited for their ability to increase exciton lifetimes and spatially separate charges. Two novel II-VI heterostructured semiconductor nanocrystals (HSNCs) systems are investigated: a series of CdX/ZnO (X = S, Se, Te) HSNCs and ZnS/ZnO HSNCs capped with two different surface ligands. In the first case, substantial photocatalytic activity improvement is observed for HSNCs (relative to pure ZnO analogues) according to the following trend: CdTe/ZnO > CdS/ZnO > CdSe/ZnO. The observed trend is explained in terms of heterojunction structure and fundamental chalcogenide chemistry. In the second case, both ZnS/ZnO HSNCs exhibit activity enhancement over analogous pure ZnO, but the degree of enhancement is found to be a function of surface ligand chemistry. Photocatalytic activity testing of all the materials investigated in this work is performed via the photodecomposition of methylene blue dye in aerated aqueous conditions under UVA (350 nm) irradiation. The synthetic techniques employed for the synthesis of colloidal SNCs investigated in this thesis range from chemical precipitation and solvothermal techniques to several different organometallic approaches. A wide variety of analytical techniques are employed for the chemical, structural and optical characterisation of SNC photocatalysts including: XRD, XPS, TEM, UV-vis absorption, PL spectroscopy and FTIR. Atom Probe Tomography (APT) is employed for the first time in the structural characterisation of II-VI heterojunctions in colloidal HSNCs. Overall, this thesis provides a useful contribution to the growing body of knowledge pertaining to the enhancement of photocatalytic SNCs for useful applications including: solar energy conversion to chemical fuels, the photodecomposition of pollutants and light-driven synthetic chemistry.
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Pedetti, Silvia. "Synthesis and optical properties of II-VI colloidal two-dimensional nanocrystals : homo- and hetero-structures." Thesis, Paris 6, 2015. http://www.theses.fr/2015PA066755.
Анотація:
Ces travaux de thèse ont porté sur une nouvelle classe de semi-conducteurs colloïdaux sous forme de nanoplaquettes composées de chalcogénures de cadmium. Ces nanocristaux, comparables à des puits quantiques, présentent un confinement excitonique dans une seule direction, l’épaisseur, qui est contrôlée au niveau atomique. Les nanoplaquettes sont caractérisées par une excellente résolution spectrale et de bons rendements quantiques. Par conséquence, elles représentent de potentiels candidats pour développer des dispositifs optoélectroniques comme des diodes électroluminescentes ou bien des photo-détecteurs. Toutefois, dans ce but, il est nécessaire d’élargir la gamme de longueurs d’ondes d’absorption et d’émission et d’augmenter leur rendement quantique. Pour cela, nous avons étudié la synthèse colloïdale de nanoplaquettes à base d’homo- et d’hétèro-nanoplaquetts des groupes II-VI. Les nanocristaux fabriqués ont été caractérisé par spectroscopie UV-visible et de fluorescence, par diffraction à rayons X et par microscopie électronique. Dans un premier temps, nous avons optimisé la préparation de nanoplaquettes de CdTe en utilisant des procédés de synthèse colloïdale par injection de précurseurs à hautes températures. Ensuite, des structures plus complexes ont été investiguées. Par exemple, nous avons synthétisé nanoplaquettes cœur/couronne de CdSe/CdTe qui possèdent une structure électronique de type-II. Nous avons également étudié la croissance de couches d’un deuxième semi-conducteur dans la direction de l’épaisseur de plaquettes cœur pour la fabrication de structures type cœur/coque. Grâce au contrôle de la composition chimique du cœur et de la coque, l’alignement de bande a été modulé pour obtenir structures électroniques de type-I, quasi type-II et type-IIThis thesis project is based on the development of a novel class of colloidal two-dimensional nanocrystals, i.e. nanoplatelets (NPLs), composed of cadmium chalcogenides. These nanocrystals, in analogy to quantum wells, are characterized by an exciton confinement along one direction, i.e. the thickness, which can be controlled at atomic level. Nanoplatelets possess unique optical features as an excellent spectral resolution and good quantum yields. As consequence these nanocrystals are potential candidates for the fabrication of optoelectronic devices such as electroluminescent diodes or photo-detectors. However, for this aim it is necessary to enlarge the range of the absorption and emission wavelengths and to increase their quantum yield. For this reason, we investigated the colloidal synthesis of II-VI homo- and hetero-nanoplatelets which have been characterized by UV-Vis and photoluminescence spectroscopy, by X-ray diffraction and by electronic microscopy. First, we optimized the synthesis of CdTe NPLs using colloidal synthesis based on precursors injection at high temperatures. Then, we focused on more complexes hetero-structures. For example, through lateral extension reactions we obtained CdSe/CdTe core/crown NPLs which possess a type-II electronic structure. Successively, we studied the synthesis of core/shell NPLs by the growth of a second semiconductor layer along the thickness of NPLs cores. Depending on the core and shell chemical composition we could engineer the band gap of the nanoplatelets between type-I, quasi type-II and type-II electronic structures
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Kim, Jungtaek Verfasser], Oliver [Gutachter] [Benson, W. Ted [Gutachter] Masselink, and Dimitri [Gutachter] Yakovlev. "Electron-nuclear spin control and carrier spin dynamics in II-VI semiconductor / Jungtaek Kim. Gutachter: Oliver Benson ; W. Ted Masselink ; Dimitri Yakovlev." Berlin : Mathematisch-Naturwissenschaftliche Fakultät, 2016. http://d-nb.info/1103570781/34.
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Pfeuffer, Rebekka Christina [Verfasser], and Charles [Gutachter] Gould. "Growth and characterization of II-VI semiconductor nanowires grown by Au catalyst assisted molecular beam epitaxy / Rebekka Christina Pfeuffer ; Gutachter: Charles Gould." Würzburg : Universität Würzburg, 2016. http://d-nb.info/1121508308/34.
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Kim, Jungtaek [Verfasser], Oliver [Gutachter] Benson, W. Ted [Gutachter] Masselink, and Dimitri [Gutachter] Yakovlev. "Electron-nuclear spin control and carrier spin dynamics in II-VI semiconductor / Jungtaek Kim. Gutachter: Oliver Benson ; W. Ted Masselink ; Dimitri Yakovlev." Berlin : Mathematisch-Naturwissenschaftliche Fakultät, 2016. http://d-nb.info/1103570781/34.