Relevant bibliographies by topics / AlGaN/GaN heterostructure

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  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers

Academic literature on the topic 'AlGaN/GaN heterostructure'

Author: Grafiati
Published: 4 June 2021
Last updated: 25 July 2025

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Journal articles on the topic "AlGaN/GaN heterostructure"

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Maeda, Narihiko, Tadashi Saitoh, Kotaro Tsubaki, Toshio Nishida, and Naoki Kobayashi. "Two-Dimensional Electron Gas Transport Properties in AlGaN/(In)GaN/AlGaN Double-Heterostructure Field Effect Transistors." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 362–68. http://dx.doi.org/10.1557/s1092578300004518.

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Two-dimensional electron gas transport properties have been investigated in nitride double-heterostructures. A striking effect has been observed that the two-dimensional electron gas mobility has been drastically enhanced in the AlGaN/GaN/AlGaN double-heterostructure, compared with that in the conventional AlGaN/GaN single-heterostructure. The observed mobility enhancement has been shown to be mainly due to the enhanced polarization-induced electron confinement in the double-heterostructure, and additionally due to the improvement of the interface roughness in the structure. Device operation o
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Gladysheva, Nadezhda B., Vadim V. Gruzdov, Yurii V. Kolkovskii, Yulii A. Kontsevoy, and Evgenii F. Pevtsov. "Control of yellow photoluminescence in AlGaN/GaN heterostructures." Modern Electronic Materials 5, no. (2) (2019): 87–89. https://doi.org/10.3897/j.moem.5.2.51391.

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Photoluminescence with the peak corresponding to yellow color of the visible spectrum (so-called yellow luminescence) originates from deep levels in the GaN buffer layers of heterostructures and depends on heterostructure growth conditions. In turn deep levels affect the resistance of Ohmic contacts of microwave transistors fabricated from these heterostructures. This determines the reliability of GaN microwave transistor operation. Two types of units for control of photoluminescence with the peak in the yellow visible spectral region have been designed with the aim to control the quality of A
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Gladysheva, Nadezhda B., Vadim V. Gruzdov, Yurii V. Kolkovskii, Yulii A. Kontsevoy, and Evgenii F. Pevtsov. "Control of yellow photoluminescence in AlGaN/GaN heterostructures." Modern Electronic Materials 5, no. 2 (2019): 87–89. http://dx.doi.org/10.3897/j.moem.5.2.51391.

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Photoluminescence with the peak corresponding to yellow color of the visible spectrum (so-called yellow luminescence) originates from deep levels in the GaN buffer layers of heterostructures and depends on heterostructure growth conditions. In turn deep levels affect the resistance of Ohmic contacts of microwave transistors fabricated from these heterostructures. This determines the reliability of GaN microwave transistor operation. Two types of units for control of photoluminescence with the peak in the yellow visible spectral region have been designed with the aim to control the quality of A
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Yusuf, Yusnizam, Muhammad Esmed Alif Samsudin, Muhamad Ikram Md Taib, et al. "Two-Step GaN Layer Growth for High-Voltage Lateral AlGaN/GaN HEMT." Crystals 13, no. 1 (2023): 90. http://dx.doi.org/10.3390/cryst13010090.

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This paper presents reduced dislocation of the AlGaN/GaN heterostructure for high-voltage lateral high-electron-mobility transistor (HEMT) devices. AlGaN/GaN heterostructure was grown on sapphire substrate. Prior to the growth of the AlGaN layer, the GaN layer was grown via two-step growth. In the first step, the V/III ratio was applied at 1902 and then at 3046 in the second step. The FWHMs of the XRD (002) and (102) peaks of the GaN layer were around 205 arcsec ((002) peak) and 277 arcsec ((102) peak). Moreover, the surface of the GaN layer showed clear evidence of step flows, which resulted
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Michel, A., D. Hanser, R. F. Davis, et al. "Growth and Characterization of Piezoelectrically Enhanced Acceptor-Type AlGaN/GaN Heterostructures." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 605–11. http://dx.doi.org/10.1557/s1092578300004828.

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Acceptor (Mg)-doped AlGaN/GaN heterostructures were grown via MOVPE and compared to similarly doped GaN standard films grown in the same reactor. Chemical analysis of the films, via secondary ion mass spectrometry (SIMS), revealed comparable Mg concentrations of ∼2×1019 atoms/cm3 in all films. The Mg-doped GaN standard sample had a sheet conductance of 7-μS compared to a sheet conductance of 20-μS for an AlGaN/GaN heterostructure. The sheet conductance of the AlGaN/GaN heterostructures was higher due to piezoelectric acceptor doping and modulation doping effects in addition to conventional Mg
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Hirose, Kotaro, Norimichi Chinone, and Yasuo Cho. "Visualization of Polarization and Two Dimensional Electron Gas Distribution in AlGaN/GaN Heterostructure Using Scanning Nonlinear Dielectric Microscopy." Materials Science Forum 858 (May 2016): 1182–85. http://dx.doi.org/10.4028/www.scientific.net/msf.858.1182.

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AlGaN/GaN heterostructure was observed using scanning nonlinear dielectric microscopy, which can measure both carrier and polarization profile in AlGaN/GaN heterostructure. As a result, GaN spontaneous polarization and AlGaN polarization which was sum of spontaneous polarization and piezoelectric polarization were clearly distinguished. Moreover, two dimensional electron gas was observed at the AlGaN/GaN interface. These results show that scanning nonlinear dielectric microscopy is useful method for evaluation of two dimensional electron gas profile and polarization profile in AlGaN/GaN hetero
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TAN, GUIYING, and YONGBO SU. "DEPENDENCE OF CAPACITANCE–VOLTAGE CHARACTERISTICS OF NOMINALLY UNDOPED AlGaN/GaN HETEROSTRUCTURES ON SEVERAL KEY PARAMETERS OF THE MATERIALS." Modern Physics Letters B 25, no. 15 (2011): 1293–302. http://dx.doi.org/10.1142/s0217984911026267.

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Nominally undoped AlGaN / GaN heterostructure samples were grown on c-plane sapphire substrates by low-pressure metal-organic chemical vapor deposition, and their material properties, such as crystal quality, roughness of heterointerface, thickness and Al mole fraction of AlGaN barrier layer, were identified by high resolution X-ray diffraction (HRXRD). Mercury-probe capacitance–voltage (C–V) measurements were carried out to investigate the carrier distribution in the heterostructures and accurately evaluate the sheet carrier concentration of two-dimensional electron gas (2DEG) formed at AlGaN
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Rathore, Saad Ullah, Sima Dimitrijev, Hamid Amini Moghadam, and Faisal Mohd-Yasin. "Equations for the Electron Density of the Two-Dimensional Electron Gas in Realistic AlGaN/GaN Heterostructures." Nanomanufacturing 1, no. 3 (2021): 171–75. http://dx.doi.org/10.3390/nanomanufacturing1030012.

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This paper presents equations for the electron density of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures in three realistic scenarios: (1) AlGaN/GaN heterostructure with surface exposed to ambient with mobile ions, (2) metal gate deposited on the AlGaN surface, and (3) a thick dielectric passivation layer on the AlGaN surface. To derive the equations, we analyzed these scenarios by applying Gauss’s law. In contrast to the idealistic models, our analysis shows that the 2DEG charge density is proportional to the difference between spontaneous polarization of AlGaN and GaN,
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Gaevski, Mikhail, Jianyu Deng, Grigory Simin, and Remis Gaska. "500 °C operation of AlGaN/GaN and AlInN/GaN Integrated Circuits." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2014, HITEC (2014): 000084–89. http://dx.doi.org/10.4071/hitec-tp16.

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High-temperature technology platform has been developed utilizing planar III-nitride heterostructures approach. The record high electron concentration and mobility in 2DEG channel of III-nitride devices result in very high operation speed and are remarkably stable within a broad temperature range, allowing device operation above 500 °C. The developed IC technology is based on three key elements: (1) exceptional quality III-nitride heterostructure with very high carrier concentration and mobility that enables IC fast operation in a broad temperature range; (2) heterostructure field effect trans
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Liu, Yanli, Dunjun Chen, Kexiu Dong, et al. "Temperature Dependence of the Energy Band Diagram of AlGaN/GaN Heterostructure." Advances in Condensed Matter Physics 2018 (2018): 1–4. http://dx.doi.org/10.1155/2018/1592689.

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Temperature dependence of the energy band diagram of AlGaN/GaN heterostructure was investigated by theoretical calculation and experiment. Through solving Schrodinger and Poisson equations self-consistently by using the Silvaco Atlas software, the energy band diagram with varying temperature was calculated. The results indicate that the conduction band offset of AlGaN/GaN heterostructure decreases with increasing temperature in the range of 7 K to 200 K, which means that the depth of quantum well at AlGaN/GaN interface becomes shallower and the confinement of that on two-dimensional electron g
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Dissertations / Theses on the topic "AlGaN/GaN heterostructure"

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Nguyen, Quan H. "Physical Sensing Effects in AlGaN/GaN Heterostructure and Applications." Thesis, Griffith University, 2021. http://hdl.handle.net/10072/411259.

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Gallium nitride (GaN) is a promising material for electronic sensing devices operating in harsh environments, thanks to its large energy band gap, superior mechanical properties and excellent chemical inertness. Among various wide energy band gap semiconductors such as 3C-SiC, 4H-SiC, 6H-SiC materials, GaN and its compounds are considered as the most suitable materials for Micro Electro-Mechanical Systems (MEMS) sensors for harsh environment applications, as it can be grown on both sapphire and Si substrates, which are compatible with conventional MEMS fabrication processes, while reducing the
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Donmezer, Fatma. "Multiscale electro-thermal modeling of AlGaN/GaN heterostructure field effect transistors." Diss., Georgia Institute of Technology, 2013. http://hdl.handle.net/1853/53139.

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Understanding the magnitude of the temperature in AlGaN/GaN heterostructure fi eld e ffect transistors(HFETs) is a critical aspect of understanding their reliability and providing proper thermal management. At present, most models used to determine the temperature rise in these devices are based on continuum based heat conduction. However, in such devices, the heat generation region can be on the order of or smaller than the phonon mean free path of the heat carriers, and thus, such models may under predict the temperature. The aim of this work is towards building a multiscale thermal model th
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Tan, Wei Sin. "An experimental study of AlGaN/GaN heterostructure field-effect transistors (HFETs)." Thesis, University of Sheffield, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.400000.

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Song, Junghui. "Fabrication and Characterization of AlGaN/GaN Heterostructure Devices for Hydrogen Gas Sensing at High Temperature." The Ohio State University, 2009. http://rave.ohiolink.edu/etdc/view?acc_num=osu1250296506.

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Balaz, Daniel. "Current collapse and device degradation in AlGaN/GaN heterostructure field effect transistors." Thesis, University of Glasgow, 2011. http://theses.gla.ac.uk/2676/.

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A spectrum of phenomena related to the reliability of AlGaN/GaN HEMTs are investigated in this thesis using numerical simulations. The focus is on trap related phenomena that lead to decrease in the power output and failure of devices, i.e. the current collapse and the device degradation. The current collapse phenomenon has been largely suppressed using SiN passivation, but there are gaps in the understanding of the process leading to this effect. Device degradation, on the other side, is a pending problem of current devices and an obstacle to wide penetration of the market. Calibration of I-V
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El, Zammar Georgio. "Process of high power Schottky diodes on the AlGaN/GaN heterostructure epitaxied on Si." Thesis, Tours, 2017. http://www.theses.fr/2017TOUR4030/document.

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Les convertisseurs à base de Si atteignent leurs limites. Face à ces besoins, le GaN, avec sa vitesse de saturation des électrons et le champ électrique de claquage élevés est candidat idéal pour réaliser des redresseurs, surtout s’il est épitaxié sur substrat à bas cout. Ce travail est dédié au développement des diodes Schottky sur AlGaN/GaN. Une couche de SiNx en faible traction a été obtenue. Un contact ohmique de Ti/Al avec une gravure partiel a donné une Rc de 2.8 Ω.mm avec une résistance Rsh de 480 Ω/□. Des diodes Schottky avec les étapes issues de ces études ont été fabriqué. La diode r
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Waechtler, Thomas, Michael J. Manfra, Nils G. Weimann, and Oleg Mitrofanov. "High Power GaN/AlGaN/GaN HEMTs Grown by Plasma-Assisted MBE Operating at 2 to 25 GHz." Universitätsbibliothek Chemnitz, 2005. http://nbn-resolving.de/urn:nbn:de:swb:ch1-200500380.

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Heterostructures of the materials system GaN/AlGaN/GaN were grown by molecular beam epitaxy on 6H-SiC substrates and high electron mobility transistors (HEMTs) were fabricated. For devices with large gate periphery an air bridge technology was developed for the drain contacts of the finger structure. The devices showed DC drain currents of more than 1 A/mm and values of the transconductance between 120 and 140 mS/mm. A power added efficiency of 41 % was measured on devices with a gate length of 1 µm at 2 GHz and 45 V drain bias. Power values of 8 W/mm were obtained. Devices with submicron gate
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Simms, Richard James Turkington. "Insights into the reliability and physical properties of AlGaN/GaN based heterostructure devices using Optical Analysis." Thesis, University of Bristol, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.535473.

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Saxena, Himanshu. "Tunable Terahertz Detectors Based on Plasmon Exciation in Two Dimensional Electron Gasses in InGaAs/InP and AlGaN/GaN HEMT." Doctoral diss., University of Central Florida, 2009. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/3924.

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The observation of voltage-tunable plasmon resonances in the terahertz range in two dimensional electron gas (2-deg) of a high electron mobility transistor (HEMT) fabricated from the InGaAs/InP and AlGaN/GaN materials systems is reported. The devices were fabricated from a commercial HEMT wafer by depositing source and drain contacts using standard photolithography process and a semi-transparent gate contact that consisted of a 0.5 [micro]m period transmission grating formed by electron-beam lithography. Narrow-band resonant absorption of THz radiation was observed in transmission in the frequ
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Narayan, Bravishma. "Study of III-N heterostructure field effect transistors." Thesis, Georgia Institute of Technology, 2010. http://hdl.handle.net/1853/37299.

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This thesis describes the design, fabrication and characterization of AlGaN/GaN Heterostructure Field E ect Transistors (HFETs) grown by a Metal Organic Chemical Vapor Deposition (MOCVD) on sapphire substrates. The objective of this research is to develop AlGaN/GaN power devices with high breakdown voltage (greater than 1 kV) and low turn-on resistance. Various characteristics such as current drive (Idss), transconductance (gm) and threshold voltage (Vth) have also been measured and the results have been discussed. Two major challenges with the development of high breakdown voltage AlGaN/GaN H
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Book chapters on the topic "AlGaN/GaN heterostructure"

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Swain, S. K., S. R. Pattanaik, Janmejaya Pradhan, and G. N. Dash. "Terahertz Properties of GaN/AlGaN Heterostructure IMPATT Diode." In Springer Proceedings in Physics. Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-97604-4_44.

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Maeda, Narihiko, and Naoki Kobayashi. "Two-Dimensional Electron Gas Transport Properties in AlGaN/GaN Heterostructure Field-Effect Transistors." In III-V Nitride Semiconductors. CRC Press, 2022. http://dx.doi.org/10.1201/9780367813628-6.

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Das, Subhashis, Ankush Bag, Saptarsi Ghosh, Satinder K. Sharma, and Dhrubes Biswas. "Effect of Si3N4 Passivation on the Acetone Sensing Performance of Pd/AlGaN/GaN Heterostructure." In Springer Proceedings in Physics. Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-97604-4_131.

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Teubert, Jörg, Jordi Arbiol, and Martin Eickhoff. "AlGaN/GaN Nanowire Heterostructures." In Wide Band Gap Semiconductor Nanowires 2. John Wiley & Sons, Inc., 2014. http://dx.doi.org/10.1002/9781118984291.ch1.

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Lima, A. P., C. Miskys, O. Ambacher, et al. "AlGaN/GaN lateral polarity heterostructures." In Springer Proceedings in Physics. Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59484-7_139.

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Chakraborty, Apurba, Saptarsi Ghosh, Subhashis Das, Ankush Bag, and Dhrubes Biswas. "Effect of AlGaN Barrier Thickness on Trapping Characteristics in AlGaN/GaN Heterostructures." In Springer Proceedings in Physics. Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-97604-4_28.

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Godlewski, M., and E. M. Goldys. "Interlink Between Structural and Optical Properties of GaN and GaN/AlGaN Heterostructures." In III-Nitride Semiconductors. CRC Press, 2024. http://dx.doi.org/10.1201/9781003578680-7.

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Agrawal, Mansi, B. R. Mehta, and R. Muralidharan. "Effect of Surface Treatments on the Evolution of Microstructures in GaN Thin Films and GaN/AlGaN/GaN Heterostructures." In Springer Proceedings in Physics. Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-97604-4_29.

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Biyikli, N., Cole W. Litton, J. Xie, et al. "Quantitative Mobility Spectrum Analysis of AlGaN/GaN Heterostructures Using Variable-Field Hall Measurements." In Silicon Carbide and Related Materials 2005. Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1533.

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Giannazzo, Filippo, Gabriele Fisichella, Giuseppe Greco, Patrick Fiorenza, and Fabrizio Roccaforte. "Conductive Atomic Force Microscopy of Two-Dimensional Electron Systems: From AlGaN/GaN Heterostructures to Graphene and MoS2." In Conductive Atomic Force Microscopy. Wiley-VCH Verlag GmbH & Co. KGaA, 2017. http://dx.doi.org/10.1002/9783527699773.ch7.

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Conference papers on the topic "AlGaN/GaN heterostructure"

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Liu, Qingxin, Kailin Ren, Luqiao Yin, and Jianhua Zhang. "Monolithically Integrated Temperature Sensor Based on p-GaN/AlGaN/GaN Heterostructure." In 2024 21st China International Forum on Solid State Lighting & 2024 10th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS). IEEE, 2024. https://doi.org/10.1109/sslchinaifws64644.2024.10835317.

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Zhou, Yugang, Rongming Chu, Kevin J. Chen, and Kei May Lau. "AlGaN/GaN/graded-AlGaN Double-Heterostructure HEMTs." In 2003 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2003. http://dx.doi.org/10.7567/ssdm.2003.g-9-4.

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Tsubaki, K. "Magnetometory of AlGaN/GaN heterostructure wafers." In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994176.

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Hirose, K., N. Chinone, and Y. Cho. "Observation of Polarization and Two-Dimensional Electron Gas in AlGaN/GaN Heterostructure Using Scanning Nonlinear Dielectric Microscopy." In ISTFA 2015. ASM International, 2015. http://dx.doi.org/10.31399/asm.cp.istfa2015p0333.

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Abstract We measured AlGaN/GaN heterostructure using scanning nonlinear dielectric microscopy (SNDM) [1], which can measure both carrier and polarization profile in AlGaN/GaN heterostructure. As a result, GaN spontaneous polarization and AlGaN polarization which is sum of spontaneous polarization and piezoelectric polarization were clearly distinguished. Two dimensional electron gas (2DEG) was observed at the AlGaN/GaN interface. This results show that SNDM is useful method for evaluation of 2DEG profile and polarization profile in AlGaN/GaN heterostructure.
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Osvald, J., G. Vanko, and K. Frohlich. "Frequency dependent capacitance of insulator GaN/AlGaN/GaN heterostructure." In 2014 10th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM). IEEE, 2014. http://dx.doi.org/10.1109/asdam.2014.6998683.

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Sunny, Arun, and Sudakar Singh Chauhan. "An enhancement mode GaN MOSFET with AlGaN/GaN heterostructure." In 2016 International Conference on Microelectronics, Computing and Communications (MicroCom). IEEE, 2016. http://dx.doi.org/10.1109/microcom.2016.7522529.

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Gupta, Sapna, F. Rahman, and P. A. Alvi. "Strain profile in GaN/AlGaN nano-heterostructure." In SOLID STATE PHYSICS: PROCEEDINGS OF THE 57TH DAE SOLID STATE PHYSICS SYMPOSIUM 2012. AIP, 2013. http://dx.doi.org/10.1063/1.4791407.

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Osvald, J. "Interface traps in insulator/AlGaN/GaN heterostructure capacitors." In 2012 International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM). IEEE, 2012. http://dx.doi.org/10.1109/asdam.2012.6418555.

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Spencer, B. F., M. T. Hibberd, W. F. Smith, et al. "Terahertz magnetospectroscopy studies of an AlGaN/GaN heterostructure." In CLEO: Science and Innovations. OSA, 2016. http://dx.doi.org/10.1364/cleo_si.2016.sm3l.2.

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Spencer, Ben F., Morgan T. Hibberd, William F. Smith, et al. "Terahertz magnetospectroscopy studies of an AlGaN/GaN heterostructure." In 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz). IEEE, 2016. http://dx.doi.org/10.1109/irmmw-thz.2016.7758723.

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