Relevant bibliographies by topics / AlSb

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'AlSb'

Author: Grafiati
Published: 4 June 2021
Last updated: 4 February 2022

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Journal articles on the topic "AlSb"

1

Jimenez, J. L., X. Li, and W. I. Wang. "Resonant tunneling in AlSb‐GaSb‐AlSb and AlSb‐InGaSb‐AlSb double barrier heterostructures." Applied Physics Letters 64, no. 16 (1994): 2127–29. http://dx.doi.org/10.1063/1.111705.

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Li, Zhi Hua, Wen Xin Wang, Lin Sheng Liu, et al. "Buffer influence on AlSb/InAs/AlSb quantum wells." Journal of Crystal Growth 301-302 (April 2007): 181–84. http://dx.doi.org/10.1016/j.jcrysgro.2006.11.295.

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Tuttle, G., and H. Kroemer. "IIA-7 an AlSb/InAs/AlSb quantum well HFT." IEEE Transactions on Electron Devices 34, no. 11 (1987): 2358. http://dx.doi.org/10.1109/t-ed.1987.23252.

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Luo, L. F., R. Beresford, and W. I. Wang. "Resonant tunneling in AlSb/InAs/AlSb double‐barrier heterostructures." Applied Physics Letters 53, no. 23 (1988): 2320–22. http://dx.doi.org/10.1063/1.100266.

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Lin-Chung, P. J., and M. J. Yang. "Subband structures of strained AlSb/InAs/AlSb quantum wells." Physical Review B 48, no. 8 (1993): 5338–44. http://dx.doi.org/10.1103/physrevb.48.5338.

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Tuttle, Gary, Herbert Kroemer, and John H. English. "Electron concentrations and mobilities in AlSb/InAs/AlSb quantum wells." Journal of Applied Physics 65, no. 12 (1989): 5239–42. http://dx.doi.org/10.1063/1.343167.

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Chiang, Jih‐Chen. "Band‐structure effects in AlSb‐InAs‐AlSb double‐barrier structures." Applied Physics Letters 64, no. 15 (1994): 1956–58. http://dx.doi.org/10.1063/1.111754.

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Yang, M. J., P. J. Lin-Chung, R. J. Wagner, J. R. Waterman, W. J. Moore, and B. V. Shanabrook. "Far-infrared spectroscopy in strained AlSb/InAs/AlSb quantum wells." Semiconductor Science and Technology 8, no. 1S (1993): S129—S132. http://dx.doi.org/10.1088/0268-1242/8/1s/029.

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Kitabayashi, H., T. Waho, and M. Yamamoto. "Resonant interband tunneling current in InAs/AlSb/GaSb/AlSb/InAs diodes with extremely thin AlSb barrier layers." Applied Physics Letters 71, no. 4 (1997): 512–14. http://dx.doi.org/10.1063/1.119594.

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Pavlov, N. V., and G. G. Zegrya. "Optical properties of heterostructures with deep AlSb/InAs0.84Sb0.16/AlSb quantum wells." Semiconductors 48, no. 9 (2014): 1185–95. http://dx.doi.org/10.1134/s1063782614090188.

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Dissertations / Theses on the topic "AlSb"

1

Devenson, Jan. "Trumpabangiai InAs/AlSb kvantiniai kaskadiniai lazeriai." Doctoral thesis, Lithuanian Academic Libraries Network (LABT), 2010. http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2010~D_20101102_153721-11993.

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Disertaciniame darbe nagrinėjamas InAs/AlSb medžiagų sistemos panaudojimas trumpabangių tarppajuostinių lazerių kūrimui. Buvo išplėtota molekulinių pluoštelių epitaksijos technologija, leidžianti auginti daugiaperiodines neįtemptas InAs/AlSb heterosandūras su mažu 1-2 atominių sluoksnių šiurkštumu. Buvo parodyta, jog InAs/AlSb medžiagų sistema yra tinkama kurti trumpabangiams kvantiniams kaskadiniams lazeriams, veikiantiems žemiau 4 µm bangos ilgio ribos. Buvo ištirtas kvantinių kaskadinių lazerių, turinčių tiek plazmoninius bangolaidžius su stipriai legiruotais InAs apdariniais sluoksniais, t
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Devenson, Jan. "InAs/AlSb short wavelength quantum cascade lasers." Doctoral thesis, Lithuanian Academic Libraries Network (LABT), 2010. http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2010~D_20101102_153710-37964.

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Application of InAs/AlSb materials system for development of short-wavelength quantum cascade lasers is explored. Molecular beam epitaxy (MBE) technology allowing to grow multiperiodical unstrained InAs/AlSb heterostructures with roughness of 1-2 monolayers is developed. It is demonstrated that InAs/AlSb materials system is well-suitable for development of short-wavelength quantum cascade lasers operating below 4 µm wavelength. Lasers containing plasmon-enhanced waveguides as well as the short period InAs/AlSb superlattices as waveguides were designed, MBE-grown and studied. The effect of wave
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Dvorak, Martin W. "InAs/AlSb heterostructure field-effect transistors." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1997. http://www.collectionscanada.ca/obj/s4/f2/dsk2/ftp04/mq24125.pdf.

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Cooper, L. J. "Magnetotransport studies of InAs/GaSb/AlSb-based structures." Thesis, University of Cambridge, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.597965.

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A reliable procedure has been developed which facilitates the fabrication of low-leakage front and back gated lateral transport devices in which electrons and holes reside in adjacent layers. This gating permits the alteration of the electron and hole densities in such devices almost independently of one another. A simple processing technique has also been developed for resonant inter-band and hybrid inter/intra-bond tunnelling devices. In the absence of a barrier between the layers in which the charge resides, it is shown that the wavefunctions of electrons and holes hybridise, causing an ene
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Loghmari, Zeineb. "Lasers à cascades quantiques InAs / AISb au-delà de 10µm : émission mono-fréquence et génération du THz par différence de fréquences." Thesis, Montpellier, 2019. http://www.theses.fr/2019MONTS088.

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Des applications telles que la spectroscopie des gaz ou l’imagerie médicale nécessitent des sources de lumières émettant dans l’infrarouge moyen et lointain (10 µm<λ < 28 µm) ainsi que dans le THz (λ > 60µm). Des composants à émission mono-fréquence, fonctionnant en régie continu (CW) et performants sont primordiales pour ce type d’applications. Les lasers à cascade quantiques (LCQs) sont les uniques sources pouvant couvrir cette large gamme de longueur d’onde grâce à leurs transitions inter-sous bandes. Toutefois les performances des LCQs dans cette gamme de longueur d’onde sont souv
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Sadiq, Shatha. "Préparation et caractérisation d'AlSb massif et de diodes Au-AlSb(p)." Grenoble 2 : ANRT, 1987. http://catalogue.bnf.fr/ark:/12148/cb37609646h.

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Sadiq, Shatha. "Préparation et caractérisation d'AlSb massif et de diodes Au-AlSb (p)." Montpellier 2, 1987. http://www.theses.fr/1987MON20229.

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Preparation du semiconducteur alsb par croissance bridgman; caracterisation par effet hall et mesure de resistivite. Determination de la structure de bande par electroreflexion. L'etude des diodes schottky au-alsb(p) montre que le contact se comporte comme une structure mis avec une couche interfaciale isolante de 70 a d'epaisseur et une densite d'etats de surface de 5 x 10**(11) cm**(-2) cv**(-1)
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Krishtopenko, Sergey. "Spin splitting and collective effects in InAs/AlSb quantum well heterostructures." Toulouse 3, 2011. http://thesesups.ups-tlse.fr/1459/.

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Les travaux de cette thèse, essentiellement théorique, concernent l'étude des phénomènes dépendants du spin, à un électron et à n-corps, dans les puits quantiques (PQ) de semiconducteurs (SC) à faible gap InAs/AlSb. Les résultats obtenus permettent de prévoir de nouveaux effets physiques, ils sont comparés aux résultats expérimentaux existants. L'asymétrie du champ électrique aux interfaces InAs/AlSb est étudiée expérimentalement et théoriquement, son effet sur le spectre d'énergie des sous bandes électriques est mis en évidence. La possibilité de contrôler optiquement ce champ électrique, et
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Lee, Ka Yuk. "Optical properties of GaSb/AlSb/InAs-based quasi-type I quantum structures /." View abstract or full-text, 2004. http://library.ust.hk/cgi/db/thesis.pl?PHYS%202004%20LEE.

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Thesis (M. Phil.)--Hong Kong University of Science and Technology, 2004.<br>Includes bibliographical references (leaves 44-48). Also available in electronic version. Access restricted to campus users.
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Cathabard, Olivier. "Lasers à cascade quantique InAs/AlSb : amélioration des performances et fonctionnement monofréquence." Montpellier 2, 2009. http://www.theses.fr/2009MON20227.

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Ce travail de thèse concerne la modélisation, la réalisation et la caractérisation de diodes lasers à cascade quantique pour des applications du moyen infrarouge dans la plage de longueur d'onde 3 µm - 5 µm. Les structures ont été conçues par ingénierie de bande à l'échelle quantique à partir du système de matériaux InAs/AlSb. Ces hétérostructures sont composées de 30 périodes de zone active, chacune constituée d'un injecteur à superréseau InAs/AlSb assurant le transport des porteurs vers des puits d'InAs où ont lieu les transitions radiatives. Ces transitions sont effectuées entre 2 niveaux é
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Books on the topic "AlSb"

1

Aaronovitch, Ben. Also people. DoctorWho Books, 1995.

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Also Georgiana. St. Martin's Press, 1986.

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Weedy, Garrod. Amphigorey also. Harcourt Brace Jovanovich, Publishers, 1993.

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Harding, Alison. Also Georgiana. Joseph, 1986.

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Also rising. Eakin Press, 1998.

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Cowley, Rod. ALS: A guide for librarians and systems managers. Gower, 1988.

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Als ik als eerste aankom. Contact, 2011.

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Stehr, Johannes, Roland Anhorn, and Kerstin Rathgeb, eds. Konflikt als Verhältnis – Konflikt als Verhalten – Konflikt als Widerstand. Springer Fachmedien Wiesbaden, 2018. http://dx.doi.org/10.1007/978-3-658-19488-8.

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Borger, Harald. Bohnerze und Quarzsande als Indikatoren paläogeographischer Verwitterungsprozesse und der Altreliefgenese östlich von Albstadt (Schwäbische Alb). Geographisches Institut der Universität zu Köln im Selbstverlag, 1990.

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Also known as. Apogee Press, 2009.

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Book chapters on the topic "AlSb"

1

da Silva, E. C. F. "AlSb: dielectric constant." In New Data and Updates for IV-IV, III-V, II-VI and I-VII Compounds, their Mixed Crystals and Diluted Magnetic Semiconductors. Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14148-5_77.

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Strauch, D. "AlSb: lattice parameters." In New Data and Updates for IV-IV, III-V, II-VI and I-VII Compounds, their Mixed Crystals and Diluted Magnetic Semiconductors. Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14148-5_79.

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Strauch, D. "AlSb: bulk modulus." In New Data and Updates for IV-IV, III-V, II-VI and I-VII Compounds, their Mixed Crystals and Diluted Magnetic Semiconductors. Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14148-5_82.

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da Silva, E. C. F. "AlSb: critical point energies." In New Data and Updates for IV-IV, III-V, II-VI and I-VII Compounds, their Mixed Crystals and Diluted Magnetic Semiconductors. Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14148-5_76.

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Strauch, D. "AlSb: Raman coupling coefficient." In New Data and Updates for IV-IV, III-V, II-VI and I-VII Compounds, their Mixed Crystals and Diluted Magnetic Semiconductors. Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14148-5_80.

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Strauch, D. "AlSb: equation of state." In New Data and Updates for IV-IV, III-V, II-VI and I-VII Compounds, their Mixed Crystals and Diluted Magnetic Semiconductors. Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14148-5_83.

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Tomashyk, Vasyl. "Systems Based on AlSb." In Quaternary Alloys Based on III-V Semiconductors. CRC Press, 2018. http://dx.doi.org/10.1201/9780429508080-7.

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Feenstra, R. M., and S. W. Hla. "2.3.3 AlSb, Aluminum Antimonide." In Physics of Solid Surfaces. Springer Berlin Heidelberg, 2015. http://dx.doi.org/10.1007/978-3-662-47736-6_20.

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da Silva, E. C. F. "AlSb: interband transition energies." In Landolt-Börnstein - Group III Condensed Matter. Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-23415-6_21.

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Vasyl, Tomashyk. "Systems Based on AlSb." In Ternary Alloys Based on III-V Semiconductors. CRC Press, 2017. http://dx.doi.org/10.1201/9781315116624-7.

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Conference papers on the topic "AlSb"

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Kitabayashi, Hiroto, Takao Waho, and Masafumi Yamamoto. "Crucial Role of Extremely Thin AlSb Barrier Layers in InAs/AlSb/GaSb/AlSb/InAs Resonant Interband Tunneling Diodes." In 1997 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1997. http://dx.doi.org/10.7567/ssdm.1997.d-9-4.

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MATULIONIS, A., L. ARDARAVICIUS, J. LIBERIS, et al. "MICROWAVE NOISE IN GaSb/AlSb/InAs/AlSb/GaSb/GaAs QUANTUM WELL CHANNEL." In Proceedings of the 16th International Conference. WORLD SCIENTIFIC, 2001. http://dx.doi.org/10.1142/9789812811165_0117.

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Avanesyan, S. M., W. M. Hlaing Oo, F. X. Morrissey, M. D. McCluskey, and S. L. Dexheimer. "Ultrafast carrier dynamics in AlSb." In International Quantum Electronics Conference. OSA, 2004. http://dx.doi.org/10.1364/iqec.2004.iwa12.

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Chow, David H., Jan Soederstroem, D. A. Collins, David Z. Ting, Edward T. Yu, and Thomas C. McGill, Jr. "Novel InAs/GaSb/AlSb tunnel structures." In Semi - DL tentative, edited by Gottfried H. Doehler, Emil S. Koteles, and Joel N. Schulman. SPIE, 1990. http://dx.doi.org/10.1117/12.20765.

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LIU, Meng Hwang, Yeong Her WANG, Mau Phon HOUNG, J. F. CHEN, and Alfred Y. CHO. "The Low-Temperature Characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs Broken-Gap Interband Tunneling Structure." In 1995 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1995. http://dx.doi.org/10.7567/ssdm.1995.pd-1-1.

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Mikhailova, Maya, Edward Ivanov, Leonid Danilov, et al. "Superlinearity and temperature dependence of electroluminescence in heterostructures with deep AlSb/InAs1-xSbx/AlSb quantum well." In Photonics Prague 2014, edited by Pavel Tománek, Dagmar Senderáková, and Petr Páta. SPIE, 2015. http://dx.doi.org/10.1117/12.2069903.

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Scandolo, Sandro, Alfonso Baldereschi, and Federico Capasso. "Very large |x(2)(2w)| in the near infrared in AlSb/GaSb-InAsSb/AlSb asymmetric quantum wells." In Physical Concepts of Materials for Novel Optoelectronic Device Applications II, edited by Fabio Beltram and Erich Gornik. SPIE, 1993. http://dx.doi.org/10.1117/12.162752.

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Ancona, M. G., J. B. Boos, N. Papanicolaou, W. Chang, B. R. Bennett, and D. Park. "Modeling gate leakage in InAs/AlSb HEMTs." In IEEE International Conference on Simulation of Semiconductor Processes and Devices. IEEE, 2003. http://dx.doi.org/10.1109/sispad.2003.1233695.

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Shen, Jun, Saied Tehrani, Herb Goronkin, Gary Kramer, Marilyn Adam, and John D. Dow. "Semi-Insulating, p-type, and n-type Doping in AlSb, GaSb, and AlSb/InAs by a Single Native Defect." In 1993 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1993. http://dx.doi.org/10.7567/ssdm.1993.pd-2-10.

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DasGupta, S., R. A. Reed, R. D. Schrimpf, et al. "Electrical stress induced degradation in InAs - AlSb HEMTS." In 2010 IEEE International Reliability Physics Symposium. IEEE, 2010. http://dx.doi.org/10.1109/irps.2010.5488729.

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Reports on the topic "AlSb"

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Hsu, L., E. E. Haller, and A. K. Ramdas. Pressure dependence of Se absorption lines in AlSb. Office of Scientific and Technical Information (OSTI), 1996. http://dx.doi.org/10.2172/414370.

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McCluskey, M. D., L. Hsu, E. E. Haller, W. Walukiewicz, and P. Becla. Local vibrational modes of Se-H complexes in AlSb. Office of Scientific and Technical Information (OSTI), 1996. http://dx.doi.org/10.2172/414371.

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Bourret-Courchesne Ph.D., Edith, and Didier Perrodin. Pulling of 3 mm diameter AlSb rods by micro-pulling down method. Office of Scientific and Technical Information (OSTI), 2009. http://dx.doi.org/10.2172/960381.

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Becla, P., and A. F. Witt. AlSb photonic detectors for gamma-ray spectroscopy. Progress report, October 1994--August 1995. Office of Scientific and Technical Information (OSTI), 1995. http://dx.doi.org/10.2172/188646.

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Witt, A. F., P. Becla, C. Counterman, et al. Top-seed solution growth and characterization of AlSb single crystals for gamma-ray detectors. Final report, 1 October 1994--30 September 1995. Office of Scientific and Technical Information (OSTI), 1996. http://dx.doi.org/10.2172/584984.

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Cho, J. CY20 AIHA Internal Audit of ALAB and NIF-HPL and CY20 Management Review of ALAB. Office of Scientific and Technical Information (OSTI), 2021. http://dx.doi.org/10.2172/1808765.

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Groshen, Erica L. Is a Driverless Future Also Jobless? W.E. Upjohn Institute, 2019. http://dx.doi.org/10.17848/pb2019-17.

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Waters, A., and W. Brown. ALS Performance Summary - Update. Office of Scientific and Technical Information (OSTI), 2004. http://dx.doi.org/10.2172/15014619.

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Tamura, ed. ALS Activity Report 2004. Office of Scientific and Technical Information (OSTI), 2005. http://dx.doi.org/10.2172/877330.

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Donahue, R. J. ALS synchrotron radiation shielding. Office of Scientific and Technical Information (OSTI), 1995. http://dx.doi.org/10.2172/186725.

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