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Journal articles on the topic 'AlSb'

Author: Grafiati
Published: 4 June 2021
Last updated: 4 February 2022

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1

Jimenez, J. L., X. Li, and W. I. Wang. "Resonant tunneling in AlSb‐GaSb‐AlSb and AlSb‐InGaSb‐AlSb double barrier heterostructures." Applied Physics Letters 64, no. 16 (1994): 2127–29. http://dx.doi.org/10.1063/1.111705.

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2

Li, Zhi Hua, Wen Xin Wang, Lin Sheng Liu, et al. "Buffer influence on AlSb/InAs/AlSb quantum wells." Journal of Crystal Growth 301-302 (April 2007): 181–84. http://dx.doi.org/10.1016/j.jcrysgro.2006.11.295.

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3

Tuttle, G., and H. Kroemer. "IIA-7 an AlSb/InAs/AlSb quantum well HFT." IEEE Transactions on Electron Devices 34, no. 11 (1987): 2358. http://dx.doi.org/10.1109/t-ed.1987.23252.

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4

Luo, L. F., R. Beresford, and W. I. Wang. "Resonant tunneling in AlSb/InAs/AlSb double‐barrier heterostructures." Applied Physics Letters 53, no. 23 (1988): 2320–22. http://dx.doi.org/10.1063/1.100266.

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5

Lin-Chung, P. J., and M. J. Yang. "Subband structures of strained AlSb/InAs/AlSb quantum wells." Physical Review B 48, no. 8 (1993): 5338–44. http://dx.doi.org/10.1103/physrevb.48.5338.

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6

Tuttle, Gary, Herbert Kroemer, and John H. English. "Electron concentrations and mobilities in AlSb/InAs/AlSb quantum wells." Journal of Applied Physics 65, no. 12 (1989): 5239–42. http://dx.doi.org/10.1063/1.343167.

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7

Chiang, Jih‐Chen. "Band‐structure effects in AlSb‐InAs‐AlSb double‐barrier structures." Applied Physics Letters 64, no. 15 (1994): 1956–58. http://dx.doi.org/10.1063/1.111754.

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8

Yang, M. J., P. J. Lin-Chung, R. J. Wagner, J. R. Waterman, W. J. Moore, and B. V. Shanabrook. "Far-infrared spectroscopy in strained AlSb/InAs/AlSb quantum wells." Semiconductor Science and Technology 8, no. 1S (1993): S129—S132. http://dx.doi.org/10.1088/0268-1242/8/1s/029.

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9

Kitabayashi, H., T. Waho, and M. Yamamoto. "Resonant interband tunneling current in InAs/AlSb/GaSb/AlSb/InAs diodes with extremely thin AlSb barrier layers." Applied Physics Letters 71, no. 4 (1997): 512–14. http://dx.doi.org/10.1063/1.119594.

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10

Pavlov, N. V., and G. G. Zegrya. "Optical properties of heterostructures with deep AlSb/InAs0.84Sb0.16/AlSb quantum wells." Semiconductors 48, no. 9 (2014): 1185–95. http://dx.doi.org/10.1134/s1063782614090188.

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11

Beresford, R., L. F. Luo, and W. I. Wang. "Resonant tunneling of holes in AlSb/GaSb/AlSb double‐barrier heterostructures." Applied Physics Letters 55, no. 7 (1989): 694–95. http://dx.doi.org/10.1063/1.101801.

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12

Pekarik, John J. "An AlSb–InAs–AlSb double-heterojunction P-n-P bipolar transistor." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 10, no. 2 (1992): 1032. http://dx.doi.org/10.1116/1.586407.

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13

Chen, Y. W., H. S. Li, and K. L. Wang. "Study of Stark effect in AlSb/GaSb/InAs/AlSb quantum well." Superlattices and Microstructures 14, no. 2-3 (1993): 137–40. http://dx.doi.org/10.1006/spmi.1993.1114.

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14

Hu, Yunong, Man Chun Tam, and Zbigniew R. Wasilewski. "Unintentional As incorporation into AlSb and interfacial layers within InAs/AlSb superlattices." Journal of Vacuum Science & Technology B 37, no. 3 (2019): 032902. http://dx.doi.org/10.1116/1.5088974.

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15

Desplanque, L., S. El Kazzi, J. L. Codron, et al. "AlSb nucleation induced anisotropic electron mobility in AlSb/InAs heterostructures on GaAs." Applied Physics Letters 100, no. 26 (2012): 262103. http://dx.doi.org/10.1063/1.4730958.

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16

Ong, Duu Sheng, and Hans L. Hartnagel. "THz radiation by quasi-ballistic electron reflection in AlSb/InAs/AlSb heterostructures." EPL (Europhysics Letters) 109, no. 3 (2015): 38004. http://dx.doi.org/10.1209/0295-5075/109/38004.

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17

Cheng, X. C. "Ballistic electron emission microscopy spectroscopy study of AlSb and InAs/AlSb superlattice barriers." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 16, no. 4 (1998): 2291. http://dx.doi.org/10.1116/1.590235.

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18

Kadow, C., H. K. Lin, M. Dahlström, et al. "Reduction of the unintentional background electron density in AlSb/InAs/AlSb quantum wells." Journal of Crystal Growth 251, no. 1-4 (2003): 543–46. http://dx.doi.org/10.1016/s0022-0248(02)02447-8.

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19

Kitabayashi, Hiroto, Takao Waho, and Masafumi Yamamoto. "Resonant interband tunneling current in InAs/AlSb/GaSb/AlSb/InAs double barrier diodes." Journal of Applied Physics 84, no. 3 (1998): 1460–66. http://dx.doi.org/10.1063/1.368208.

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20

Villaflor, Antonio Basanes, Masamitsu Yoshizawa, and Morihiko Kimata. "Strain Accommodation in GaSb/AlSb Superlattices on (001) GaSb Substrates with AlSb Buffers." Japanese Journal of Applied Physics 28, Part 2, No. 2 (1989): L166—L168. http://dx.doi.org/10.1143/jjap.28.l166.

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21

Liu, Meng Hwang, Yeong Her Wang, and Mau Phon Houng. "Interband Tunneling Mechanisms and Effects of AlSb Center-Barrier Layer on Light Particle Coupling and Reverse I-V Characteristics of GaSb/AlSb/InAs/AlSb/GaSb/AlSb/InAs Triple-Barrier Structures." Japanese Journal of Applied Physics 33, Part 1, No. 8 (1994): 4506–12. http://dx.doi.org/10.1143/jjap.33.4506.

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22

Chen, J. F., and A. Y. Cho. "Interband tunneling between valence‐band and conduction‐band quantum wells in a GaSb/AlSb/InAs/AlSb/GaSb/AlSb/InAs triple‐barrier structure." Journal of Applied Physics 72, no. 3 (1992): 960–63. http://dx.doi.org/10.1063/1.351772.

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23

Isa, Haider I., and Ahmed M. Abdul-Lettif. "Band Structure of AlSb Nanoclusters." World Journal of Condensed Matter Physics 02, no. 03 (2012): 129–32. http://dx.doi.org/10.4236/wjcmp.2012.23021.

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24

Maaref, M., F. F. Charfi, M. Zouaghi, C. Benoit, la Guillaume, and A. Joullie. "Hot-electron luminescence in AlSb." Physical Review B 34, no. 12 (1986): 8650–55. http://dx.doi.org/10.1103/physrevb.34.8650.

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25

Bolognesi, C. R., and D. H. Chow. "InAs/AlSb dual-gate HFETs." IEEE Electron Device Letters 17, no. 11 (1996): 534–36. http://dx.doi.org/10.1109/55.541772.

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26

Longenbach, K. F., L. F. Luo, and W. I. Wang. "Resonant interband tunneling in InAs/GaSb/AlSb/InAs and GaSb/InAs/AlSb/GaSb heterostructures." Applied Physics Letters 57, no. 15 (1990): 1554–56. http://dx.doi.org/10.1063/1.103351.

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27

Genoe, J., K. Fobelets, C. Van Hoof, and G. Borghs. "In-plane dispersion relations of InAs/AlSb/GaSb/AlSb/InAs interband resonant-tunneling diodes." Physical Review B 52, no. 19 (1995): 14025–34. http://dx.doi.org/10.1103/physrevb.52.14025.

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28

Yeong-Her Wang, Meng Hwang Liu, Mau Phon Houng, J. F. Chen, and A. Y. Cho. "Investigation of negative differential resistance phenomena in GaSb/AlSb/InAs/GaSb/AlSb/InAs structures." IEEE Transactions on Electron Devices 41, no. 10 (1994): 1734–41. http://dx.doi.org/10.1109/16.324581.

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29

Werking, J. D., C. R. Bolognesi, L. D. Chang, C. Nguyen, E. L. Hu, and H. Kroemer. "High-transconductance InAs/AlSb heterojunction field-effect transistors with delta -doped AlSb upper barriers." IEEE Electron Device Letters 13, no. 3 (1992): 164–66. http://dx.doi.org/10.1109/55.144998.

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30

Xie, H., W. I. Wang, J. R. Meyer, and L. R. Ram‐Mohan. "Normal incidence second‐harmonic generation inL‐valley AlSb/GaSb/Ga1−xAlxSb/AlSb stepped quantum wells." Applied Physics Letters 65, no. 16 (1994): 2048–50. http://dx.doi.org/10.1063/1.112789.

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31

Xie, H., W. I. Wang, and J. R. Meyer. "Infrared electroabsorption modulation at normal incidence in asymmetrically stepped AlSb/InAs/GaSb/AlSb quantum wells." Journal of Applied Physics 76, no. 1 (1994): 92–96. http://dx.doi.org/10.1063/1.357065.

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32

Genoe, J., K. Fobelets, C. Van Hoof, and G. Borghs. "Erratum: In-plane dispersion relations of InAs/AlSb/GaSb/AlSb/InAs interband resonant-tunneling diodes." Physical Review B 53, no. 19 (1996): 13194. http://dx.doi.org/10.1103/physrevb.53.13194.

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33

Nishioka, Masaya, Bruce A. Gurney, Ernesto E. Marinero, and Francisco Mireles. "Zero field spin splitting in AlSb/InAs/AlSb quantum wells induced by surface proximity effects." Applied Physics Letters 95, no. 24 (2009): 242108. http://dx.doi.org/10.1063/1.3274129.

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34

Theodorou, G., and G. Tsegas. "Theory of electronic and optical properties of bulk AlSb and InAs and InAs/AlSb superlattices." Physical Review B 61, no. 16 (2000): 10782–91. http://dx.doi.org/10.1103/physrevb.61.10782.

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35

Суханов, М. А., А. К. Бакаров та К. С. Журавлёв. "AlSb/InAs-гетероструктуры для СВЧ-транзисторов". Письма в журнал технической физики 47, № 3 (2021): 37. http://dx.doi.org/10.21883/pjtf.2021.03.50574.18588.

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The paper describes the features of the MBE growth process of AlSb / InAs heterostructures with a high-mobility two-dimensional electron gas for UHF transistors with ultra-low power consumption. The main stages of manufacturing transistors based on AlSb / InAs heterostructures are outlined. The drain and transfer characteristics of transistors are presented and discussed.
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36

Sarney, W. L., L. Salamanca-Riba, J. D. Bruno, and R. L. Tober. "Strain relaxation in AlSb/GaSb heterostructures." Solid-State Electronics 46, no. 10 (2002): 1643–49. http://dx.doi.org/10.1016/s0038-1101(02)00119-3.

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37

Hirano, H., S. Uehara, A. Mori, et al. "High-pressure phase transitions in AlSb." Journal of Physics and Chemistry of Solids 62, no. 5 (2001): 941–49. http://dx.doi.org/10.1016/s0022-3697(00)00260-2.

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38

Algarni, H., O. A. Al-Hagan, N. Bouarissa, M. A. Khan, and T. F. Alhuwaymel. "Pseudopotential calculations of AlSb under pressure." Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy 190 (February 2018): 215–19. http://dx.doi.org/10.1016/j.saa.2017.09.029.

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39

Bennett, Brian R., B. V. Shanabrook, and E. R. Glaser. "Interface control in InAs/AlSb superlattices." Applied Physics Letters 65, no. 5 (1994): 598–600. http://dx.doi.org/10.1063/1.112955.

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40

Kutny, V. E., A. V. Rybka, A. S. Abyzov, et al. "AlSb single-crystal grown by HPBM." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 458, no. 1-2 (2001): 448–54. http://dx.doi.org/10.1016/s0168-9002(00)01039-1.

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41

Santos, Paulo V., P. Etchegoin, M. Cardona, B. Brar, and H. Kroemer. "Optical anisotropy in InAs/AlSb superlattices." Physical Review B 50, no. 12 (1994): 8746–54. http://dx.doi.org/10.1103/physrevb.50.8746.

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42

Gauer, Ch, J. Scriba, A. Wixforth, et al. "Photoconductivity in AlSb/InAs quantum wells." Semiconductor Science and Technology 8, no. 1S (1993): S137—S140. http://dx.doi.org/10.1088/0268-1242/8/1s/031.

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43

Raptis, Y. S., E. Anastassakis, and G. Kanellis. "Second-order Raman scattering in AlSb." Physical Review B 46, no. 24 (1992): 15801–11. http://dx.doi.org/10.1103/physrevb.46.15801.

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44

Wu, Lili, Shuo Jin, Guanggen Zeng, et al. "Cu doped AlSb polycrystalline thin films." Journal of Semiconductors 34, no. 1 (2013): 013003. http://dx.doi.org/10.1088/1674-4926/34/1/013003.

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45

Borca-Tasciuc, D. Achimov, W. L. Li, T. "THERMAL CONDUCTIVITY OF InAs/ AlSb SUPERLATTICES." Microscale Thermophysical Engineering 5, no. 3 (2001): 225–31. http://dx.doi.org/10.1080/108939501753222896.

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46

Voisin, P., C. Delalande, G. Bastard, et al. "Electronic structure of GaSbAlSb superlattices." Superlattices and Microstructures 1, no. 2 (1985): 155–59. http://dx.doi.org/10.1016/0749-6036(85)90113-2.

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47

Hofmann, G., C. T. Lin, E. Sch�nherr, and J. Weber. "Photoluminescence study of manganese in AlSb." Applied Physics A Solids and Surfaces 57, no. 4 (1993): 315–17. http://dx.doi.org/10.1007/bf00332283.

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48

Yin, Ziang, Wanqi Jie, Xianggang Zhang, and Tao Wang. "Adhesion-free Bridgman growth of AlSb." Journal of Crystal Growth 540 (June 2020): 125641. http://dx.doi.org/10.1016/j.jcrysgro.2020.125641.

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49

Aourag, H., F. Sellal, H. Abid, N. Badi, A. Mahmoudi, and B. Khelifa. "The high-pressure behavior of AlSb." Materials Chemistry and Physics 33, no. 3-4 (1993): 254–59. http://dx.doi.org/10.1016/0254-0584(93)90071-s.

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50

Sukhanov, M. A., A. K. Bakarov, and K. S. Zhuravlev. "AlSb/InAs Heterostructures for Microwave Transistors." Technical Physics Letters 47, no. 2 (2021): 139–42. http://dx.doi.org/10.1134/s1063785021020127.

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