Academic literature on the topic 'Aluminium Nitride'

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Journal articles on the topic "Aluminium Nitride"

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Ryabov, A. V. "Medium-Carbon Free-Cutting Steel." Materials Science Forum 946 (February 2019): 47–52. http://dx.doi.org/10.4028/www.scientific.net/msf.946.47.

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The paper presents theoretical and experimental studies of the formation processes of boron nitride, aluminium nitride, aluminium oxide and manganese sulphide inclusions in a free-cutting steel. Fact Sage software was used to model the behaviour of non-metallic inclusions. Formation temperatures and the amount of key inclusions in steel were calculated. Formation order of inclusions is as follows: aluminium oxide > boron nitride > manganese sulphide > aluminium nitride. The object of study was the A45AR grade steel in 1.1–1.2 kg ingots. It was melted in an induction furnace, and alumi
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Uvarov, V. M., E. M. Rudenko, Yu V. Kudryavtsev, M. V. Uvarov, I. V. Korotash, and M. V. Dyakin. "Electronic Structure of Aluminium Nitride and Its Solid Solutions with Oxygen and Aluminium." METALLOFIZIKA I NOVEISHIE TEKHNOLOGII 46, no. 3 (May 13, 2024): 199–210. http://dx.doi.org/10.15407/mfint.46.03.0199.

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Wei, Jun Cong, and Jun Bo Tu. "Effect of Aluminium Powder on the Hot Mechanical Properties of Corundum-Silicon Nitride Composites." Advanced Materials Research 189-193 (February 2011): 3960–63. http://dx.doi.org/10.4028/www.scientific.net/amr.189-193.3960.

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Based on the Al-O-N phase stable diagram and adopting inverse reaction sintering process, corundum-silicon nitride composite refractories were prepared using corundum, silicon nitride, clay and aluminium powder as the main starting materials. The specimens were sintered at 1600 for 3 hours under air atmosphere with different oxygen partial pressure obtained by addition of different amount of aluminium powder. The effects of aluminium powder additions(0, 4wt.%, 8 wt.% and 12 wt.% respectively) on the hot modulus of rupture were investigated .The phase composition and microstructure were tested
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Hou, Qinghua, Raj Mutharasan, and Michael Koczak. "Feasibility of aluminium nitride formation in aluminum alloys." Materials Science and Engineering: A 195 (June 1995): 121–29. http://dx.doi.org/10.1016/0921-5093(94)06511-x.

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Tangen, Inger Lise, Tor Grande, Y. D. Yu, R. Høier, and M. A. Einarsrud. "Preparation and Mechanical Characterisation of Aluminium Nitride-Titanium Nitride and Aluminium Nitride-Silicon Carbide Composites." Key Engineering Materials 206-213 (December 2001): 1153–56. http://dx.doi.org/10.4028/www.scientific.net/kem.206-213.1153.

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Kent, Damon, Graham B. Schaffer, and John Drennan. "Novel Aluminium Nitride Surface Coatings Formed on Aluminium." Materials Science Forum 561-565 (October 2007): 571–75. http://dx.doi.org/10.4028/www.scientific.net/msf.561-565.571.

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A new nitriding method has been devised which requires only a simple vacuum furnace and enables direct nitridation of solid aluminium without any prior surface treatment. It can be used to produce thick aluminium nitride surface layers on aluminium, under nitrogen at atmospheric pressure. A critical element of the process is the use of a magnesium vapour source that reduces/disrupts the natural, protective oxide film on the aluminium surface and facilitates nitriding. The nitride surface layers form through two distinct modes, one growing outward from the aluminium plate surface and the other
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Iwanciw, J., D. Podorska, and J. Wypartowicz. "Simulation of Oxygen and Nitrogen Removal from Steel by Means of Titanium and Aluminum." Archives of Metallurgy and Materials 56, no. 3 (September 1, 2011): 635–44. http://dx.doi.org/10.2478/v10172-011-0069-x.

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Simulation of Oxygen and Nitrogen Removal from Steel by Means of Titanium and Aluminum Authors' computer program was employed in the simulation of the course of steel refining by means of simultaneously used aluminium and titanium. The mass and chemical composition of liquid steel and non-metallic precipitates, were calculated at constant or variable temperature. The influence of assumed nitrides form on the results of simulation was determined. Nitrides may be considered either as separate phases or as the components of non-metallic solution. The stoichiometry of titanium oxide obtained also
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Wilson, F. G., and T. Gladman. "Aluminium nitride in steel." International Materials Reviews 33, no. 1 (January 1988): 221–86. http://dx.doi.org/10.1179/imr.1988.33.1.221.

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Koryakin A.A., Kukushkin S. A., Osipov A. V., and Sharofidinov Sh. Sh. "Growth regimes of aluminium nitride films on hybrid SiC/Si(111) substrates." Physics of the Solid State 64, no. 1 (2022): 113. http://dx.doi.org/10.21883/pss.2022.01.52497.209.

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The nucleation mechanism of aluminum nitride films grown by the method ofhydride vapor phase epitaxy on hybrid substrates 3C-SiC/Si(111) istheoretically analyzed. The temperature regions and vapor pressure regionsof components are determined in which the island growth mechanism and thelayer-by-layer growth mechanism are realized. The theoretical conclusionsare compared with the experimental data. The morphology of aluminum nitridefilm on 3C-SiC/Si(111) at the initial growth stage is investigated by themethod of scanning electron microscopy. The methods of controlling thechange of the growth me
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Ichinose, Noboru. "Aluminium Nitride Ceramics for Substrates." Materials Science Forum 34-36 (January 1991): 663–67. http://dx.doi.org/10.4028/www.scientific.net/msf.34-36.663.

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Dissertations / Theses on the topic "Aluminium Nitride"

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Muensit, Supasarote. "Piezoelectric coefficients of gallium arsenide, gallium nitride and aluminium nitride." Phd thesis, Australia : Macquarie University, 1999. http://hdl.handle.net/1959.14/36187.

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"1998"--T.p.<br>Thesis (PhD)--Macquarie University, School of Mathematics, Physics, Computing and Electronics, 1999.<br>Includes bibliographical references.<br>Introduction -- A Michelson interferometer for measurement of piezoelectric coefficients -- The piezoelectric coefficient of gallium arsenide -- Extensional piezoelectric coefficients of gallium nitrides and aluminium nitride -- Shear piezoelectric coefficients of gallium nitride and aluminium nitride -- Electrostriction in gallium nitride, aluminium nitride and gallium arsenide -- Summary and prognosis.<br>The present work represents t
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Taylor, Matthew Bruce, and matthew taylor@rmit edu au. "A Study of Aluminium Nitride and Titanium Vanadium Nitride Thin Films." RMIT University. Applied Science, 2007. http://adt.lib.rmit.edu.au/adt/public/adt-VIT20080529.151820.

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Thin film coatings are used to improve the properties of components and products in such diverse areas as tool coatings, wear resistant biological coatings, miniature integrated electronics, micro-mechanical systems and coatings for optical devices. This thesis focuses on understanding the development of intrinsic stress and microstructure in coatings of the technologically important materials of aluminium nitride (AlN) and titanium vanadium nitride (TiVN) deposited by filtered cathodic arc deposition. Thin films of AlN are fabricated under a variety of substrate bias regimes and at diffe
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Xiao, Xiaoling, and S3060677@student rmit edu au. "Characterization of nano-structured coatings containing aluminium, aluminium-nitride and carbon." RMIT University. Applied Sciences, 2008. http://adt.lib.rmit.edu.au/adt/public/adt-VIT20081217.100453.

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There is an every increasing need to develop more durable and higher performing coatings for use in a range of products including tools, devices and bio-implants. Nano-structured coatings either in the form of a nanocomposite or a multilayer is of considerable interest since they often exhibit outstanding properties. The objective of this thesis was to use advanced plasma synthesis methods to produce novel nano-structured coatings with enhanced properties. Coatings consisting of combinations of aluminum (Al), aluminum nitride (AlN) and amorphous carbon (a-C) were investigated. Cathodic vacuum
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Boudjelida, Boumedienne. "Metal-aluminium gallium nitride Schottky contacts formation." Thesis, Sheffield Hallam University, 2006. http://shura.shu.ac.uk/19373/.

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X-ray photoelectron spectroscopy (XPS) has been used to investigate the effect of various surface cleaning procedures on Al[x]Ga[1]-[x]N surfaces for x = 0.20 and 0.30. Results show that wet chemical etch in a HF solution followed by a 600°C in-situ annealing under ultra-high vacuum (UHV) is very effective in removing oxygen from the surface. Downward band bending of 0.87 eV and 0.99 eV also occurs between the solvents-treated and the annealed Al[x]Ga[1]-[x]N surfaces for x = 0.20 and 0.30, respectively. Increasing in-situ temperature annealing in increments of 100°C up to 600°C shows a re-ord
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Cheng, Chung-choi, and 鄭仲材. "Positron beam studies of fluorine implanted gallium nitride and aluminium gallium nitride." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2009. http://hub.hku.hk/bib/B43278577.

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Cheng, Chung-choi. "Positron beam studies of fluorine implanted gallium nitride and aluminium gallium nitride." Click to view the E-thesis via HKUTO, 2009. http://sunzi.lib.hku.hk/hkuto/record/B43278577.

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Rebholz, Claus. "Synthesis and properties of titanium aluminium boron nitride coatings." Thesis, University of Hull, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.310329.

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Norton, Murray Grant. "Characterisation and thick film metallisation of aluminium nitride substrates." Thesis, Imperial College London, 1989. http://hdl.handle.net/10044/1/47594.

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Ligl, Jana [Verfasser], and Oliver [Akademischer Betreuer] Ambacher. "Aluminium scandium nitride grown by metalorganic chemical vapour deposition." Freiburg : Universität, 2020. http://d-nb.info/1225294118/34.

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Martin, David Michael. "Electro-Acoustic and Electronic Applications Utilizing Thin Film Aluminium Nitride." Doctoral thesis, Uppsala universitet, Fasta tillståndets elektronik, 2009. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-100957.

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In recent years there has been a huge increase in the growth of communication systems such as mobile phones, wireless local area networks (WLAN), satellite navigation and various other forms of wireless data communication that have made analogue frequency control a key issue. The increase in frequency spectrum crowding and the increase of frequency into microwave region, along with the need for minimisation and capacity improvement, has shown the need for the development of high performance, miniature, on-chip filters operating in the low to medium GHz frequency range. This has hastened the ne
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Books on the topic "Aluminium Nitride"

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Burrows, Clare Louise. Processing of aluminium nitride. Uxbridge: Brunel University, 1992.

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Perry, Duncan. Optimisation of a closed-field unbalanced mangnetron sputter process: Titanium aluminium nitride. Salford: University of Salford, 1995.

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Liles, K. J. Mechanical and physical properties of particulate composites in the system titanium nitride-alumina-aluminum nitride. Washington, D.C: U.S. Dept. of the Interior, Bureau of Mines, 1989.

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Liles, K. J. Mechanical and physical properties of particulate composites in the system titanium nitride-alumina-aluminum nitride. Washington, DC: Dept. of the Interior, 1989.

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Janik, Jerzy Franciszek. Charakterystyka reakcji i procesów wytwarzania specyficznych form materiałowych azotku glinu - AIN oraz azotku boru - BN z prekursorów chemicznych. 2nd ed. Kraków: Wydawnictwa AGH, 1994.

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Chaudhuri, Reet. Integrated Electronics on Aluminum Nitride. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-031-17199-4.

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Vserossiĭskoe soveshchanie "Nitridy gallii︠a︡, indii︠a︡ i ali︠u︡minii︠a︡--struktury i pribory" (2nd 1998 St. Petersburg, Russia). Nitridy gallii︠a︡, indii︠a︡ i ali︠u︡minii︠a︡--struktury i pribory: Materialy 2-go vserossiĭskogo soveshchanii︠a︡, 2 ii︠u︡nii︠a︡ 1998 g., Sankt-Peterburgskiĭ gosudarstvennyĭ tekhnicheskiĭ universitet = Gallium nitride, indium nitride, aluminum nitride--structures and devices : technical digest : the 2nd Russian Workshop, June 2, 1998, St.-Petersburg State Technical University. Sankt-Peterburg: Sankt-Peterburgskiĭ gos. tekhn. universitet, 1998.

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Jamarani, F. Deposition of single-layer and graded aluminum nitride coatings on vanadium substrates using ion-beam assisted reactive evaporation (ITER task no. ETA-EC-BRL26). Mississauga, Ont: Canadian Fusion Fuels Technology Project, 1994.

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Adams, Arnold. Analytical methods for determining products from thermal decomposition of aluminum nitrate nonahydrate. Pittsburgh, Pa: U.S. Dept. of the Interior, Bureau of Mines, 1987.

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Cooper, John H. Process-dependence of properties in high thermal conductivity aluminum nitride substrates for electronic packaging. Monterey, Calif: Naval Postgraduate School, 1991.

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Book chapters on the topic "Aluminium Nitride"

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Rudolph, Stephan. "Boron Nitride Release Coatings." In Aluminium Cast House Technology, 163–70. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2013. http://dx.doi.org/10.1002/9781118806364.ch16.

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Wildhack, S., and Fritz Aldinger. "Freeze Casting of Aluminium Nitride." In Advances in Science and Technology, 407–12. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/3-908158-01-x.407.

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Kent, D., G. B. Schaffer, and John Drennan. "Novel Aluminium Nitride Surface Coatings Formed on Aluminium." In Materials Science Forum, 571–75. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-462-6.571.

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Radic, Vlado N. "Explosive Consolidation of Aluminium Nitride Powder." In Advanced Science and Technology of Sintering, 489–95. Boston, MA: Springer US, 1999. http://dx.doi.org/10.1007/978-1-4419-8666-5_69.

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Philippov, Philip, and N. Nicolov. "Hybrid Integrated Circuits on Polycrystalline Aluminium Nitride." In Micro System Technologies 90, 261–66. Berlin, Heidelberg: Springer Berlin Heidelberg, 1990. http://dx.doi.org/10.1007/978-3-642-45678-7_36.

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Keller, Kevin, Thomas Schlothauer, Marcus Schwarz, Erica Brendler, Kristin Galonska, Gerhard Heide, and Edwin Kroke. "Properties of Shock-Synthesized Rocksalt-Aluminium Nitride." In Ceramic Transactions Series, 305–11. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2012. http://dx.doi.org/10.1002/9781118491867.ch31.

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Das, Soham, and Bibhu Prasad Swain. "Investigation of Titanium Aluminium Nitride (TiAlN): A Review." In Lecture Notes in Electrical Engineering, 147–58. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-4765-7_16.

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Chen, Bin, and Wei Pan. "Dielectric Properties of Boron Nitride-Aluminium Nitride Composites Prepared by Spark Plasma Sintering." In Key Engineering Materials, 796–98. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-410-3.796.

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Wuhrer, Richard, and Wing Yiu Yeung. "Magnetron Co-Sputtering of Nanostructured Chromium Aluminium Nitride Coatings." In Materials Science Forum, 4001–4. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-960-1.4001.

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Krnel, Kristoffer, and Tomaž Kosmač. "The Hydrolysis of Aluminium Nitride: A Problem or an Advantage." In Ceramic Transactions Series, 39–46. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2010. http://dx.doi.org/10.1002/9780470640845.ch6.

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Conference papers on the topic "Aluminium Nitride"

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Desideri, Daniele, Tommaso Cavallin, Alvise Maschio, and Matteo Poggeschi Belloni. "Aluminium nitride films on glass." In 2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC). IEEE, 2014. http://dx.doi.org/10.1109/nmdc.2014.6997430.

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Ruemenapp, T. "Dielectric breakdown in aluminium nitride." In 11th International Symposium on High-Voltage Engineering (ISH 99). IEE, 1999. http://dx.doi.org/10.1049/cp:19990870.

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Desideri, Daniele, Enrico Bernardo, and Alvise Maschio. "Reactive magnetron sputtered aluminium nitride films." In 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO). IEEE, 2015. http://dx.doi.org/10.1109/nano.2015.7388985.

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Dagdag, S., T. Lebey, S. Dinculescu, J. Saiz, and E. Dutarde. "High temperature behaviours of aluminium nitride." In 2007 European Conference on Power Electronics and Applications. IEEE, 2007. http://dx.doi.org/10.1109/epe.2007.4417337.

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Pickup, I. M. "The Failure of Aluminium Nitride Under Shock." In Shock Compression of Condensed Matter - 2001: 12th APS Topical Conference. AIP, 2002. http://dx.doi.org/10.1063/1.1483651.

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Olivares, J., J. Malo, S. González, E. Iborra, I. Izpura, M. Clement, A. Sanz-Hervás, J. L. Sánchez-Rojas, and P. Sanz. "Tunable mechanical resonator with aluminium nitride piezoelectric actuation." In Photonics Europe, edited by Hakan Ürey and Ayman El-Fatatry. SPIE, 2006. http://dx.doi.org/10.1117/12.664444.

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Tarala, Vitaly, Aleksandr Altakhov, Mikhail Ambartsumov, Vladimir Martens, and Mikhail Shevchenko. "Growth of heteroepitaxial aluminium nitride films on aluminium oxide substrates via PEALD method." In 2016 14th International Baltic Conference on Atomic Layer Deposition (BALD). IEEE, 2016. http://dx.doi.org/10.1109/bald.2016.7886528.

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Jin, Tiening, and Pao Tai Lin. "Mid-infrared aluminium nitride waveguides for label-free sensing." In 2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO). IEEE, 2017. http://dx.doi.org/10.1109/nano.2017.8117381.

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Ricart, T., P.-P. Lassagne, S. Boisseau, G. Despesse, A. Lefevre, C. Billard, S. Fanget, and E. Defay. "Macro energy harvester based on Aluminium Nitride thin films." In 2011 IEEE International Ultrasonics Symposium (IUS). IEEE, 2011. http://dx.doi.org/10.1109/ultsym.2011.0480.

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Olivares, J., M. Clement, E. Iborra, L. Vergara, J. L. Sanchez-Rojas, J. Vazquez, and P. Sanz. "Simulation, fabrication, and testing of aluminium nitride piezoelectric microbridges." In Microtechnologies for the New Millennium 2005, edited by Carles Cane, Jung-Chih Chiao, and Fernando Vidal Verdu. SPIE, 2005. http://dx.doi.org/10.1117/12.608228.

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Reports on the topic "Aluminium Nitride"

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Napier, J. Recycle of nitric acid and aluminum nitrate. Office of Scientific and Technical Information (OSTI), April 1991. http://dx.doi.org/10.2172/5548809.

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Wallace, J. S., E. R. Jr Fuller, and S. W. Freiman. Mechanical properties of aluminum nitride substrates. Gaithersburg, MD: National Institute of Standards and Technology, 1996. http://dx.doi.org/10.6028/nist.ir.5903.

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Batyrev, Iskander G., Chi-Chin Wu, Peter W. Chung, N. S. Weingarten, and Kenneth A. Jones. Control of Defects in Aluminum Gallium Nitride ((Al)GaN) Films on Grown Aluminum Nitride (AlN) Substrates. Fort Belvoir, VA: Defense Technical Information Center, February 2013. http://dx.doi.org/10.21236/ada571048.

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Janik, J. F., R. L. Wells, J. L. Coffer, J. V. St John, and W. T. Pennington. Nanocrystalline Aluminum Nitride and Aluminum/Gallium Nitride Nanocompositesvia Transamination of M(NMe2)32, M = Al, Al/Ga (1/1). Fort Belvoir, VA: Defense Technical Information Center, May 1998. http://dx.doi.org/10.21236/ada345603.

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Delegard, Calvin, Carolyn Pearce, Mateusz Dembowski, Michelle MV Snyder, Ian Leavy, Steven Baum, and Matthew Fountain. Aluminum Hydroxide Solubility in Sodium Hydroxide Solutions Containing Nitrite/Nitrate of Relevance to Hanford Tank Waste. Office of Scientific and Technical Information (OSTI), September 2018. http://dx.doi.org/10.2172/1660940.

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Sandra Schujman and Leo Schowalter. GaN-Ready Aluminum Nitride Substrates for Cost-Effective, Very Low Dislocation Density III-Nitride LED's. Office of Scientific and Technical Information (OSTI), October 2010. http://dx.doi.org/10.2172/1014019.

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Perdieu, L. H. Thick film fabrication of aluminum nitride microcircuits. Final report. Office of Scientific and Technical Information (OSTI), March 1994. http://dx.doi.org/10.2172/10143124.

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McCauley, James W. Structure and Properties of Aluminum Nitride and AlON Ceramics. Fort Belvoir, VA: Defense Technical Information Center, May 2002. http://dx.doi.org/10.21236/ada402960.

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QUEST INTEGRATED INC KENT WA. In-Situ Composites in the Aluminum Nitride-Alumina System,. Fort Belvoir, VA: Defense Technical Information Center, January 1995. http://dx.doi.org/10.21236/ada299416.

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de Almeida, V. F., and J. C. Rojo. Simulation of Transport Phenomena in Aluminum Nitride Single-Crystal Growth. Office of Scientific and Technical Information (OSTI), June 2002. http://dx.doi.org/10.2172/940542.

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