Relevant bibliographies by topics / CdTe heterojunction

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers
  5. Reports

Academic literature on the topic 'CdTe heterojunction'

Author: Grafiati
Published: 28 May 2022
Last updated: 30 July 2025

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Journal articles on the topic "CdTe heterojunction"

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Dabban, Mehdi Ahmad, and Abdel-naser A. M. Alfaqeer. "Enhancement in microstructural and optical properties of thermally evaporated CdTe/CdSe heterojunction thin Films." University of Aden Journal of Natural and Applied Sciences 26, no. 2 (2023): 273–84. http://dx.doi.org/10.47372/uajnas.2022.n2.a14.

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The optimization of microstructural and optical properties of a thin layer is an important step prior device fabrication process, so an enhancement in these properties of thermally evaporated CdTe/CdSe thin films was reported in this work. We choose to research (CdSe) materials as a n-type absorber layer in the CdTe/CdSe heterojunction thin film. The Effect of annealing temperature on the structural and optical properties of CdTe/CdSe Heterojunction thin films was studied, using various techniques such as X-ray diffraction (XRD), scanning electron microscopy (SEM) and Double-beam computer-cont
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Sadullaev, Sadula O., Ibrokhim B. Sapaev, and Khidoyat E. Abdikarimov. "Modeling and Theoretical Study of p-n Heterojunctions Based on CdTe/Si: Band Alignment, Carrier Transport, and Temperature-Dependent Electrophysical Properties." East European Journal of Physics, no. 1 (March 3, 2025): 211–16. https://doi.org/10.26565/2312-4334-2025-1-22.

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This paper presents a comprehensive theoretical study of p-n heterojunctions formed between cadmium telluride (CdTe) and silicon (Si) over the temperature range of 0 K to 800 K. We focus on band alignment, carrier transport mechanisms, and the temperature-dependent electrophysical properties of the heterojunctions. Through modeling approaches, we explore the energy band structure, intrinsic concentration, intrinsic electrical conductivity, and the impact of temperature variations on the heterojunction characteristics. Our findings provide insights into optimizing the performance of CdTe/Si het
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Yang, Wei Yong, Kui Ying Li, Sai Ling Wei, Guang Jing Song, and Jan Zhang. "Relationship between Microstructure and Photoelectron Behaviors of CdTe/Ligand Self-Assembly Quantum Dots." Materials Science Forum 685 (June 2011): 114–18. http://dx.doi.org/10.4028/www.scientific.net/msf.685.114.

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A water-soluble CdTe QDs capped by 3-Mercaptopropionic acid (MPA) were synthesized. The results confirmed that the grain size of the QDs was controlled by changing the reflux time of precursor solution and that the QDs possessed obviously quantum size effect. The results showed that a depletion layer CdTe1-xSx(0£x≤1) formed in between CdTe nanoparticle and ligand MPA. It is believed that two heterojunction-like structures possess quite distinct surface photovoltaic characteristic excited between the core-CdTe and the shell-CdS, and between CdTe/CdS and the ligand MPA, respectively, according t
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Razooqi, Mohammed A., Ameer F. Abdulameer, Adwan N. Hameed, Rasha A. Abdullaha, and Ehsan I. Sabbar. "The Electrical Characterization of p-CdTe/n-Si (111) Heterojunction Diode." Advanced Materials Research 702 (May 2013): 236–41. http://dx.doi.org/10.4028/www.scientific.net/amr.702.236.

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p-CdTe film has been deposited on n-Si(111) substrate by thermal evaporation technique. The prepared CdTe/Si heterojunction diodes have been annealed at 573K. The capacitance-voltage measurements have studied for the prepared heterojunctions under 2 KHz frequencies. The capacitance-voltage measurement indicated that these diodes are abrupt. The capacitance at zero bias, the built in voltage and the doping concentration increased after annealing process while the zero bias depletion region width is decreased. The carrier transport mechanism for CdTe/Si diodes in dark is tunneling-recombination.
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Koo, Bonil, and Brian A. Korgel. "Coalescence and Interface Diffusion in Linear CdTe/CdSe/CdTe Heterojunction Nanorods." Nano Letters 8, no. 8 (2008): 2490–96. http://dx.doi.org/10.1021/nl8015126.

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Zeng, Guanggen, Paul Harrison, Ali Kidman, Alaa Al-mebir, Lianghuan Feng, and Judy Wu. "Nondestructive Investigation of Heterojunction Interfacial Properties Using Two-Wavelength Raman Spectroscopy on Thin-Film CdS/CdTe Solar Cells." Applied Spectroscopy 70, no. 9 (2016): 1555–60. http://dx.doi.org/10.1177/0003702816643545.

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Raman spectra specific to CdS and CdTe were obtained on the CdS/CdTe heterojunction interface by employing two excitation wavelengths of λ1 = 488 nm and λ2 = 633 nm, respectively, from the glass side of Glass/FTO/CdS/CdTe/HgTe:Cu:graphite/Ag solar cells fabricated using pulsed-laser deposition (PLD). This two-wavelength Raman spectroscopy approach, with one wavelength selected below the absorption edge of the window layer (λ2 in this case), allows nondestructive characterization of the CdS/CdTe heterojunction and therefore correlation of the interfacial properties with the solar cell performan
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Zeng, Guanggen, Jingquan Zhang, Wenwu Wang, and Lianghuan Feng. "Correlation of Interfacial Transportation Properties of CdS/CdTe Heterojunction and Performance of CdTe Polycrystalline Thin-Film Solar Cells." International Journal of Photoenergy 2015 (2015): 1–8. http://dx.doi.org/10.1155/2015/519386.

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The light and dark output performances of CdS/CdTe solar cells made by close-spaced sublimation (CSS) were investigated to elucidate the transportation properties of carriers at CdS/CdTe heterojunction interface. It has been found that the interfacial transportation properties were relatively sensitive to variations of the characteristics of heterojunction due to the series resistance and shunting effects. For the high quality cell with 12.1% efficiency, narrow depletion region of ~1.1 microns and large electric field intensity of ~1.3 V/μm allow the sufficient energy-band bending close to CdS
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Sharan, Abhishek, Marco Nardone, Dmitry Krasikov, Nirpendra Singh, and Stephan Lany. "Atomically thin interlayer phase from first principles enables defect-free incommensurate SnO2/CdTe interface." Applied Physics Reviews 9, no. 4 (2022): 041411. http://dx.doi.org/10.1063/5.0104008.

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Advancing optoelectronic and emerging technologies increasingly requires control and design of interfaces between dissimilar materials. However, incommensurate interfaces are notoriously defective and rarely benefit from first-principles predictions, because no explicit atomic-structure models exist. Here, we adopt a bulk crystal structure prediction method to the interface geometry and apply it to SnO2/CdTe heterojunctions without and with the addition of CdCl2, a ubiquitous and beneficial, but abstruse processing step in CdTe photovoltaics. Whereas the direct SnO2/CdTe interface is highly de
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Jayswal, Niva K., Dipendra Adhikari, Indra Subedi, Ambalanath Shan, and Nikolas J. Podraza. "Role of CdTe Interface Structure on CdS/CdTe Photovoltaic Device Performance." Materials 16, no. 20 (2023): 6812. http://dx.doi.org/10.3390/ma16206812.

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Glancing angle deposition (GLAD) of CdTe can produce a cubic, hexagonal, or mixed phase crystal structure depending upon the oblique deposition angles (Φ) and substrate temperature. GLAD CdTe films are prepared at different Φ at room temperature (RT) and a high temperature (HT) of 250 °C and used as interlayers between the n-type hexagonal CdS window layer and the p-type cubic CdTe absorber layer to investigate the role of interfacial tailoring at the CdS/CdTe heterojunction in photovoltaic (PV) device performance. The Φ = 80° RT GLAD CdTe interlayer and CdS both have the hexagonal structure,
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Chougale, Akanksha S., Harshad D. Shelke, Bikram Prasad, et al. "Simulation of p-CdTe and n-TiO2 Heterojunction Solar Cell Efficiency." Journal of Computers, Mechanical and Management 2, no. 1 (2023): 17–25. http://dx.doi.org/10.57159/gadl.jcmm.2.1.23036.

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This study presents a numerical analysis of p-type CdTe and n-type TiO2 heterojunction solar cells. The simulations were conducted using SCAPS-1D software to investigate the effects of varying the thickness of the p-type CdTe layer, the temperature, and the band gap on the efficiency of the solar cell. The results show that the efficiency of the solar cell increases from 16.81% to 18.28% as the thickness of the p-type CdTe layer is varied from 1.0 to 5.0 µm and decreases from 17.95% to 11.67% as the temperature is varied from 300 K to 400 K. The efficiency also increases from 15.29% to 19.26%
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Dissertations / Theses on the topic "CdTe heterojunction"

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Kurbatov, Denys Ihorovych, Денис Игоревич Курбатов, Денис Ігорович Курбатов, et al. "Sublimation and microstructural investigations of ZnS/CdTe heterojunction." Thesis, Вид-во СумДУ, 2009. http://essuir.sumdu.edu.ua/handle/123456789/4222.

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Доброжан, Олександр Анатолійович, Александр Анатольевич Доброжан, Oleksandr Anatoliyovych Dobrozhan, et al. "Optical Losses of Thin Solar Cells on the Basis of n-ZnS / p-CdTe and n-CdS / p-CdTe Heterojunctions." Thesis, Sumy State University Publishing, 2013. http://essuir.sumdu.edu.ua/handle/123456789/33898.

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The optical reflection and absorption losses in the accessory layers of solar cells based on n-ZnS / p- CdTe and n-CdS / p-CdTe heterojunctions are defined in this work. Aluminum doped zinc oxide is used as the front conductive layer material. It is shown that the replacement of traditional window material (CdS) for a wide-one (ZnS) leads to an increase in accessory solar cells layers transmittance. When the thickness of the window layers is 50 nm, the transmittance using ZnS windows with the wavelength of 380-500 nm is higher in 7-40 % than the corresponding value for CdS. At 300 nm for t
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Dobrozhan, O. A., T. O. Berestok, D. I. Kurbatov, A. S. Opanasyuk, N. M. Opanasyuk, and V. F. Nefedchenko. "Optical Losses of Thin Solar Cells on the Basis of n-ZnS / p-CdTe and n-CdS / p-CdTe Heterojunctions." Thesis, Sumy State University, 2013. http://essuir.sumdu.edu.ua/handle/123456789/35590.

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The optical reflection and absorption losses in the accessory layers of solar cells based on n-ZnS / p- CdTe and n-CdS / p-CdTe heterojunctions are defined in this work. Aluminum doped zinc oxide is used as the front conductive layer material. It is shown that the replacement of traditional window material (CdS) for a wide-one (ZnS) leads to an increase in accessory solar cells layers transmittance. When the thickness of the window layers is 50 nm, the transmittance using ZnS windows with the wavelength of 380-500 nm is higher in 7-40 % than the corresponding value for CdS. At 300 nm for
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Painter, J. D. "Recrystallisation and interdiffusion in CdTe-CdS heterojunction solar cells." Thesis, Cranfield University, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.508015.

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Lau, Yin Ping. "Si/CdTe heterojunction fabricated by closed hot wall system." HKBU Institutional Repository, 1995. http://repository.hkbu.edu.hk/etd_ra/44.

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Gutta, Venkatesh. "INVESTIGATIONS OF CuInTe2 / CdS & CdTe / CdS HETEROJUNCTION SOLAR CELLS." UKnowledge, 2011. http://uknowledge.uky.edu/gradschool_theses/654.

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Thin film solar cells of Copper Indium Telluride and Cadmium Sulfide junctions were fabricated on plain ITO glass slides and also on those coated with intrinsic Tin Oxide. CdS was deposited through chemical bath deposition and CIT by electrodeposition. Both compounds were subjected to annealing at temperatures between 350°C and 500°C which produced more uniform film thicknesses and larger grain sizes. The CIT/ CdS junction was characterized after performing XRD and spectral absorption of individual compounds. Studies were also made on CdS / CdTe solar cells with respect to effect of annealing
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Chou, Hengchang. "Efficiency limiting defects and mechanisms in CdTe/CdS heterojunction solar cells." Diss., Georgia Institute of Technology, 1995. http://hdl.handle.net/1853/14897.

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Mackey, K. J. "Some aspects of the InSb-CdTe heterojunction system with a view to band offset measurement." Thesis, Bucks New University, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.234722.

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Бересток, Таїсія Олександрівна, Таисия Александровна Бересток, Taisiia Oleksandrivna Berestok, et al. "Modeling of the basic solar cells characteristics on the basis of n-ZnS/p-CdTe and n-CdS/p-CdTe heterojunctions." Thesis, Прикарпатський національний університет імені Василя Стефаника, 2013. http://essuir.sumdu.edu.ua/handle/123456789/34071.

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In this work we used SCAPS-3200 software environment for the realistic modeling of the basic electrical characteristics (current density of short circuit (Jsc), open circuit voltage (Uoc), fill factor (FF) and efficiency (h)) of thin solar cells films with n-ZnS/p-CdTe heterojunction. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/34071
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Forsyth, Nicola M. "A study of Schottky barriers to CdS, and the CdTe : CdS heterojunction." Thesis, Cardiff University, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.375956.

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Book chapters on the topic "CdTe heterojunction"

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Faurie, Jean-Pierre. "Valence Band Discontinuities in HgTe-CdTe-ZnTe Heterojunction Systems." In Band Structure Engineering in Semiconductor Microstructures. Springer New York, 1989. http://dx.doi.org/10.1007/978-1-4757-0770-0_7.

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Lei, Zhang, Wu Wei, Li Min, Zhao Zhanxia, Zhang Yuhong, and Z. Q. Ma. "The Interface Recombination Current of the CDS/CDTE Heterojunction Solar Cell." In Proceedings of ISES World Congress 2007 (Vol. I – Vol. V). Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-75997-3_274.

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Guldner, Y. "HgTe-CdTe Superlattices." In Heterojunctions and Semiconductor Superlattices. Springer Berlin Heidelberg, 1986. http://dx.doi.org/10.1007/978-3-642-71010-0_14.

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Gagara, Ludmila, Ion Lungu, Lidia Ghimpu, and Tamara Potlog. "Synthesis Technology for CdSe/CdTe Heterojunctions and Characterization of Their Photoelectric Properties." In IFMBE Proceedings. Springer Nature Switzerland, 2023. http://dx.doi.org/10.1007/978-3-031-42775-6_23.

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Orletskyi, I. G., M. I. Ilashchuk, I. P. Koziarskyi, M. V. Koval, E. V. Maistruk, and D. P. Koziarskyi. "Electrical Properties of Photosensitive MnFe2O4/n-CdTe Heterojunctions." In Springer Proceedings in Physics. Springer Nature Switzerland, 2024. https://doi.org/10.1007/978-3-031-67527-0_12.

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Hatanaka, Y., S. G. Meikle, Y. Tomita, and T. Takabayasi. "X-Ray Imaging Sensor Using CdTe/a-Si: H Heterojunction." In Photo-Electronic Image Devices - Proceedings of the Ninth Symposium. Elsevier, 1988. http://dx.doi.org/10.1016/s0065-2539(08)60464-3.

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Aziz, Anver, and Nisha Devi. "CdTe/CdS heterojunction Solar Cell suitable for Low-Illumination Applications." In New Trends in Physical Science Research Vol. 5. Book Publisher International (a part of SCIENCEDOMAIN International), 2022. http://dx.doi.org/10.9734/bpi/ntpsr/v5/2309b.

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Fardi, Hamid, and Fatima Buny. "Characterization and Modeling of ZnO/CdS/CdTe Heterojunction Thin Film Solar Cells." In Engineering Research: Perspectives on Recent Advances Vol. 2. BP International, 2025. https://doi.org/10.9734/bpi/erpra/v2/3818.

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Chate, Prashant A., and Dattatray J. Sathe. "DESIGN AND FABRICATION OF ZnSe BASED SOLAR CELLS." In Futuristic Trends in Renewable & Sustainable Energy Volume 3 Book 2. Iterative International Publishers, Selfypage Developers Pvt Ltd, 2024. http://dx.doi.org/10.58532/v3bars2p1ch13.

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Direct wide band gap zinc selenide (ZnSe) would be a perfect match for solar cell devices. In photoelectrochemical cells, Znse is act as n-type photoelectrode. Electrolytes, redox couple, solvent, ionic liquids, cations and additives decide the efficiency of the devices. ZnSe is appropriate passivation substance to generate a type II core or shell arrangement for CdSe/cadmium sulphie quantum dots There are some benefits related with ZnSe heterojunction based solar cells above silicon homojunction
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Razykov, T. M., B. Kh Kadyrov, and M. A. Khodyaeva. "Energy Band Models of n-ZnxCd1-x S—p-CdTe and n-ZnxCd1-x S — p-Si (0≤x≤1) Heterojunctions." In September 16. De Gruyter, 1985. http://dx.doi.org/10.1515/9783112492987-058.

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Conference papers on the topic "CdTe heterojunction"

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Alom, Md Zahangir, Vasilios Palekis, Wei Wang, Sheikh Tawsif Elahi, and Chris Ferekides. "CuSCN as a Transparent P-Type Heterojunction Partner for the N-Type CdTe Solar Cells." In 2024 IEEE 52nd Photovoltaic Specialist Conference (PVSC). IEEE, 2024. http://dx.doi.org/10.1109/pvsc57443.2024.10749280.

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Dixit, Khushboo, and Gufran Ahmad. "Optimizing the performance of ZnO nanowire-based CdS-CdTe thin film heterojunction solar cells through Numerical simulation." In 2024 4th International Conference on Emerging Frontiers in Electrical and Electronic Technologies (ICEFEET). IEEE, 2024. https://doi.org/10.1109/icefeet64463.2024.10866934.

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Duenow, Joel N., James M. Burst, David S. Albin, et al. "CdTe single-crystal heterojunction photovoltaic cells." In 2014 IEEE 40th Photovoltaic Specialists Conference (PVSC). IEEE, 2014. http://dx.doi.org/10.1109/pvsc.2014.6925388.

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Wu, Ping. "Study of p-ZnTe/n-CdTe thin film heterojunction." In Shanghai - DL tentative, edited by Shixun Zhou and Yongling Wang. SPIE, 1991. http://dx.doi.org/10.1117/12.47335.

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Focsha, Alexandru, Petru Gashin, and Alexei Simashkevich. "Photovoltaic Phenomena in Thin Film ZnTe-CdSe Heterojunctions." In ASME 2001 Solar Engineering: International Solar Energy Conference (FORUM 2001: Solar Energy — The Power to Choose). American Society of Mechanical Engineers, 2001. http://dx.doi.org/10.1115/sed2001-141.

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Abstract Thin layer ZnTe-CdSe heterojunctions were produced by vapor phase epitaxial growth of ZnTe and CdSe layers on mica and single-crystal ZnSe substrates. These heterojunctions photosensitivity covers the wavelength region of 0.56–0.85 μm. The shape of photosensitivity spectral dependence of ZnTe-CdSe heterojunction depends on the components thickness and their doping level. Thin layer ZnTe-CdSe epitaxial heterojunction parameters under illumination of 80 mW/cm2 (AM1.5) are: FF=0.53, Uoc=0.72V, Isc=14.8 mA/cm2, efficiency η=7.1%. Thin film polycrystalline ZnTe-CdSe heterojunctions having
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Yoon, W., T. K. Townsend, M. P. Lumb, J. G. Tischler, and E. E. Foos. "Solution-deposited CdTe nanocrystal thin-films for heterojunction solar cells." In 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC). IEEE, 2013. http://dx.doi.org/10.1109/pvsc.2013.6744332.

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Andrii, Mostovyi, Mykhailo M. Solovan, Viktor V. Brus, Tõnu Pullerits та Pavlo D. Maryanchuk. "Physical properties of the heterojunction МоОх/n-CdTe as a function of the parameters of CdTe crystals". У Correlation Optics 2017, редактор Oleg V. Angelsky. SPIE, 2018. http://dx.doi.org/10.1117/12.2304915.

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Pena, Juan Luis, Victor Rejon, Oscar Ares, Juan M. Camacho, and Araceli Rios-Flores. "The ZnO-reflectance effect on the heterojunction ITO/ZnO/CdS/CdTe." In 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC). IEEE, 2012. http://dx.doi.org/10.1109/pvsc.2012.6317995.

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Orletskyi, Ivan, Mariya Ilashchuk, Eduard Maistruk, Ivan Koziarskyi, and Dmytro Koziarskyi. "Electrical Properties of Prepared by Spray Pyrolysis FTO/n-CdTe Heterojunction." In 2021 IEEE 11th International Conference Nanomaterials: Applications & Properties (NAP). IEEE, 2021. http://dx.doi.org/10.1109/nap51885.2021.9568581.

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Ibrahim, A., S. Roy, U. B. Memon, A. L. Sharma, and S. P. Duttagupta. "Fabrication And Characterization Of CdS/CdTe Heterojunction Thin Film Solar Cell." In Michael Faraday IET International Summit 2015. Institution of Engineering and Technology, 2015. http://dx.doi.org/10.1049/cp.2015.1678.

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Reports on the topic "CdTe heterojunction"

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Rajeshwar, K. Electrodeposition of p-CdTe and CdS/CdTe heterojunction devices. Final subcontract report, September 1983-May 1985. Office of Scientific and Technical Information (OSTI), 1985. http://dx.doi.org/10.2172/6179142.

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Faurie, Jean-Pierre. MBE Growth, Characterization and Electronic Device Processing of HgCdTe, HgZnTe, Related Heterojunctions and HgCdTe-CdTe Superlattices. Defense Technical Information Center, 1987. http://dx.doi.org/10.21236/ada187456.

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Faurie, Jean-Pierre. MBE Growth, Characterization and Electronic Device Processing of HgCdTe, HgZnTe, Related Heterojunctions and HgCdTe-CdTe Superlattices. Defense Technical Information Center, 1987. http://dx.doi.org/10.21236/ada195172.

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Faurie, Jean-Pierre. MBE Growth, Characterization and Electronic Device Processing of HgCdTe, HgZnTe, Related Heterojunctions and HgCdTe-CdTe Superlattices. Defense Technical Information Center, 1987. http://dx.doi.org/10.21236/ada198421.

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