Log in

Relevant bibliographies by topics / Diode structure

Contents

Journal articles
Dissertations / Theses
Books
Book chapters
Conference papers
Reports

Academic literature on the topic 'Diode structure'

Author: Grafiati

Published: 28 May 2022

Last updated: 31 July 2025

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'Diode structure.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Journal articles on the topic "Diode structure"

1

Afanasyev, Alexey V., Boris V. Ivanov, Vladimir A. Ilyin, Alexey F. Kardo-Sysoev, Maria A. Kuznetsova, and Victor V. Luchinin. "Superfast Drift Step Recovery Diodes (DSRDs) and Vacuum Field Emission Diodes Based on 4H-SiC." Materials Science Forum 740-742 (January 2013): 1010–13. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.1010.

Full text

Abstract:

This paper presents the results of research and development of two types diode structures based on wide bandgap 4H-SiC: drift step recovery diodes (DSRDs) and field emission diodes (FED). Diodes’ structure and manufacturing methods are reviewed. Diode’s characteristics were obtained (static current-voltage characteristics and capacitor-voltage characteristic, switching properties’ characteristics for DSRDs). Field emission 4H-SiC structures illustrated high (≥102 А/сm2) current densities at electric field intensity of approximately 10V/um. 4H-SiC DSRDs in the generator structure with a single

APA, Harvard, Vancouver, ISO, and other styles

2

Polyntsev, Egor, Evgeny Erofeev, and Igor Yunusov. "The Influence of Design on Electrical Performance of AlGaN/GaN Lateral Schottky Barrier Diodes for Energy-Efficient Power Applications." Electronics 10, no. 22 (2021): 2802. http://dx.doi.org/10.3390/electronics10222802.

Full text

Abstract:

In this paper, lateral AlGaN/GaN Schottky barrier diodes are investigated in terms of anode construction and diode structure. An original GaN Schottky diode manufacturing-process flow was developed. A set of experiments was carried out to verify dependences between electrical parameters of the diode, such as reverse and forward currents, ON-state voltage, forward voltage and capacitance, anode-to-cathode distance, length of field plate, anode length, Schottky contact material, subanode recess depth, and epitaxial structure type. It was found that diodes of SiN/Al0.23Ga0.77N/GaN epi structure w

APA, Harvard, Vancouver, ISO, and other styles

3

Etor, David, Linzi Emma Dodd, and Claudio Balocco. "High-Performance Atomic Layer Deposited Al2O3 Insulator Based Metal-Insulator-Metal Diode." FUOYE Journal of Engineering and Technology 7, no. 2 (2022): 174–78. http://dx.doi.org/10.46792/fuoyejet.v7i2.815.

Full text

Abstract:

The fabrication of metal–insulator– metal (MIM) diode using an ultrathin Al2O3 insulator layer, deposited using atomic layer deposition (ALD) is presented. The Al2O3 insulating layer was found to be highly uniform throughout the diode junction, effectively overcoming the main fabrication challenge in MIM diodes. The diodes exhibit strong non-linear current–voltage curves, have a typical zero-bias curvature coefficient of 5.4 V−1 and a zero-bias resistance of approximately 118 kΩ, a value considerably smaller than other MIM diode topologies and that allows more current to be rectified. Other re

APA, Harvard, Vancouver, ISO, and other styles

4

Konishi, Kumiko, Norifumi Kameshiro, Natsuki Yokoyama, Akio Shima, and Yasuhiro Shimamoto. "Influence of Trench Structure on Reverse Characteristics of 4H-SiC JBS Diodes." Materials Science Forum 821-823 (June 2015): 596–99. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.596.

Full text

Abstract:

We fabricated trench Junction Barrier Schottky (JBS) diodes, and investigated the effect on the reduction of leakage current and the device yield. First, by calculating of electric field at the Schottky contact interface (Es), we found that the trench JBS structure can reduce Es one digit smaller than the planar JBS structure, setting 80o < The bevel angle θ < 90o. Then, 600 V / 50 A trench JBS diodes are developed and characterized. The leakage current of a trench JBS diode at 600V is 10-2 times smaller than that of planar JBS diode by effectively reducing Es. This enables to reduce the

APA, Harvard, Vancouver, ISO, and other styles

5

Zemliak, Alexander. "Models for IMPATT Diode Analysis and Optimization." WSEAS TRANSACTIONS ON COMMUNICATIONS 21 (June 30, 2022): 215–24. http://dx.doi.org/10.37394/23204.2022.21.26.

Full text

Abstract:

Some of nonlinear models for high-power pulsed IMPATT diode simulation and analysis is presented. These models are suitable for the analysis of the different operational modes of the oscillator. Its take into account the main electric and thermal phenomena in the semiconductor structure and the functional dependence of the equation coefficients on the electrical field and temperature. The first model is a precise one, which describes all important electrical phenomena on the basis of the continuity equations and Poisson equation and it is correct until 300 GHz. The second approximate mathemati

APA, Harvard, Vancouver, ISO, and other styles

6

Liu, Hai Rui, and Jun Sheng Yu. "Characterization of Metal-Semiconductor Schottky Diodes and Application on THz Detection." Advanced Materials Research 683 (April 2013): 729–32. http://dx.doi.org/10.4028/www.scientific.net/amr.683.729.

Full text

Abstract:

This paper presents a kind of air-bridged GaAs Schottky diodes which offer ultra low parasitic capacitance and series resistance in millimeter and THz wavelength. The Schottky barrier diodes have several advantages when used as millimeter wave and terahertz video, or power detectors. These include their fast time response, room temperature operation, simple structure and low cost. This paper describes the characterization of the metal-semiconductor Schottky diodes including principle, diode structure, non-linear voltage-current characteristic and signal-rectifying performance. For application,

APA, Harvard, Vancouver, ISO, and other styles

7

Zemliak, Alexander, and Eugene Machusky. "Analysis of Electrical and Thermal Models for Pulsed IMPATT Diode Simulation." WSEAS TRANSACTIONS ON CIRCUITS AND SYSTEMS 20 (July 12, 2021): 156–65. http://dx.doi.org/10.37394/23201.2021.20.19.

Full text

Abstract:

Some nonlinear models are presented for modeling and analyzing IMPATT high-power pulse diodes. These models are suitable for analyzing different operating modes of the oscillator. The first model is a precise one, which describes all important electrical phenomena on the basis of the continuity equations and Poisson´s equation, and it is correct until 300 GHz. The second approximate mathematical model suitable for the analysis of IMPATT diode stationary operation oscillator and for optimization of internal structure of the diode. The temperature distribution in the semiconductor structure is o

APA, Harvard, Vancouver, ISO, and other styles

8

Shashikala, B. N., and B. S. Nagabhushana. "Reduction of reverse leakage current at the TiO2/GaN interface in field plate Ni/Au/n-GaN Schottky diodes." Semiconductor Physics, Quantum Electronics and Optoelectronics 24, no. 04 (2021): 399–406. http://dx.doi.org/10.15407/spqeo24.04.399.

Full text

Abstract:

This paper presents the fabrication procedure of TiO2 passivated field plate Schottky diode and gives a comparison of Ni/Au/n-GaN Schottky barrier diodes without field plate and with field plate of varying diameters from 50 to 300 µm. The influence of field oxide (TiO2) on the leakage current of Ni/Au/n-GaN Schottky diode was investigated. This suggests that the TiO2 passivated structure reduces the reverse leakage current of Ni/Au/n-GaN Schottky diode. Also, the reverse leakage current of Ni/Au/n-GaN Schottky diodes decreases as the field plate length increases. The temperature-dependent elec

APA, Harvard, Vancouver, ISO, and other styles

9

Mohd Akhbar, Siti Amiera, Kan Yeep Choo, and Duu Sheng Ong. "Enhanced InP-based Gunn Diodes with Notch-d-doped Structure for Low-THz Applications." Journal of Engineering Technology and Applied Physics 5, no. 1 (2023): 1–4. http://dx.doi.org/10.33093/jetap.2023.5.1.1.

Full text

Abstract:

In this work, Monte Carlo simulation is performed for InP Gunn diode with a notch-d-doped structure. It is found that the presence of the d-doped layer has improved the Gunn diode performance significantly as compared to the conventional notch structure. The d-doped effect caused an increment in the fundamental operating frequency and current harmonic amplitude in InP Gunn diodes by modifying the electric field profile within the device. An InP notch-d-doped Gunn diode with device length of 800 nm under 3V DC bias is capable of producing AC current signal of 287 GHz, reaching the THz region, w

APA, Harvard, Vancouver, ISO, and other styles

10

RAZEGHI, MANIJEH. "GaN-BASED LASER DIODES." International Journal of High Speed Electronics and Systems 09, no. 04 (1998): 1007–80. http://dx.doi.org/10.1142/s0129156498000415.

Full text

Abstract:

We discuss optical properties of III-Nitride materials and structures. These properties are critical for the development of III-Nitride-based light-emitting diodes and laser diodes. Minority carrier diffusion length in GaN has been determined to be ~ 0.1 μm. The properties of lasing in GaN have been studied using optical pumping. The red shift of emission peak observed in stimulated emission of GaN has been modeled and attributed to many-body interactions at high excitation. The correlation of photoluminescence and optical pumping has shown that band-to-band, or shallow donor-related bandtail

APA, Harvard, Vancouver, ISO, and other styles

More sources

Dissertations / Theses on the topic "Diode structure"

1

Rimmer, Nicholas. "Structure-property relationships in a resonant tunnelling diode." Thesis, University of Cambridge, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.308244.

Full text

APA, Harvard, Vancouver, ISO, and other styles

2

Perez, Gaëtan. "Caractérisation de diodes Schottky en diamant de structure pseudo-verticale." Thesis, Université Grenoble Alpes (ComUE), 2018. http://www.theses.fr/2018GREAT051/document.

Full text

Abstract:

Le diamant est souvent défini comme le matériau ultime pour la réalisation de composants à semi-conducteurs pour des applications d'électronique de puissance. Bien que plusieurs interrupteurs de puissance en diamant soient parus à l'échelle mondiale, ils sont à l'heure actuelle à l'état de prototype et de preuve de concept. Il est donc nécessaire de comprendre leurs mécanismes de fonctionnement afin de pouvoir utiliser tout leur potentiel dans des convertisseurs de puissance. Dans cette thèse, l'analyse se focalise sur des diodes Schottky en diamant de structure pseudo-verticale. Des caractéri

APA, Harvard, Vancouver, ISO, and other styles

3

Sicard, Lambert. "Assemblages linéaires et cycliques d’unités fluorènes pour l’électronique organique : relations structure-propriétés." Thesis, Rennes 1, 2018. http://www.theses.fr/2018REN1S066/document.

Full text

Abstract:

Les oligophénylènes constituent une classe de molécules centrale dans la conception de semi-conducteurs organiques pour des applications optoélectroniques. Ces travaux portent sur la synthèse et l’étude approfondie de dérivés linéaires et cycliques du fluorène (un biphényle rigidifié par un pont méthylène), fragment constitutif essentiel dans l’électronique organique. Nous nous intéressons en particulier aux relations structure-propriétés de ces systèmes π-conjugués. Dans une première partie, avec comme cadre le développement de matériaux hôtes pour diodes électroluminescentes (PhOLEDs), nous

APA, Harvard, Vancouver, ISO, and other styles

4

Wang, Jinghui. "Fabrication, Characterization and Simulation of Sandwich Structure GaN Schottky Diode Ionizing Radiation Detectors." The Ohio State University, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=osu1405497243.

Full text

APA, Harvard, Vancouver, ISO, and other styles

5

Boukadida, Nourredine. "Etude d'une structure a effet de diode thermique : application au chauffage solaire d'un local." Poitiers, 1986. http://www.theses.fr/1986POIT2287.

Full text

Abstract:

Etude de l'optimisation de l'effet de diode thermique d'une structure pouvant servir de paroi d'un local. Definition d'une structure alveolaire a lamelles. Etude numerique approchee du comportement thermique journalier et annuel d'un local a structure a effet diode

APA, Harvard, Vancouver, ISO, and other styles

6

Boukadida, Nourredine. "Etude d'une structure à effet de diode thermique application au chauffage solaire d'un local." Grenoble 2 : ANRT, 1986. http://catalogue.bnf.fr/ark:/12148/cb37596309f.

Full text

APA, Harvard, Vancouver, ISO, and other styles

7

Crow, Martin Brian. "High resolution diode laser spectroscopy of transient species." Thesis, University of Oxford, 2012. http://ora.ox.ac.uk/objects/uuid:64bd9688-fdb3-4d05-ac2b-2a9bb621bb7c.

Full text

Abstract:

This thesis presents applications of near infrared diode lasers to high resolution spectroscopy of transient radical species. Firstly, time resolved near infrared laser gain versus absorption is utilised in Chapter 2 to determine the I∗ quantum yield following ultraviolet photolysis of iodobenzene and its fluorinated analogues. The experimental method is first confirmed by comparison with literature values of the quantum yield for iodomethane photolysis, returning a quantum yield of Φ(I∗) = 0.71 ± 0.04 in good agreement with the literature, before being applied to determine the I∗ quantum yiel

APA, Harvard, Vancouver, ISO, and other styles

8

Baran, Stuart George. "Gas-phase detection methods using diode lasers." Thesis, University of Oxford, 2009. http://ora.ox.ac.uk/objects/uuid:43e8ec07-9e1a-4060-bc8b-be75c8565600.

Full text

Abstract:

Diode lasers are a convenient and economical source of near-infrared radiation, which may usefully be applied to a host of diﬀerent sensitive detection methods; this thesis presents novel extensions of these methods, making use of the favourable characteristics of this type of light source. The ﬁrst part of this thesis details the development of an optical feedback cavity-enhanced absorption spectroscopy (OF-CEAS) apparatus, including the development of the optical system, the sample handling, and the electronics for feedback phase control. A preliminary demonstration of the system is reported

APA, Harvard, Vancouver, ISO, and other styles

9

Skřínský, Jan. "Microwave and diode laser spectroscopy of discharge and flame plasma." Thesis, Lille 1, 2010. http://www.theses.fr/2010LIL10151.

Full text

Abstract:

Deux études principales ont été menées au cours de ce travail. D’une part, le spectre de rotation pure du radical iodomethyle (état fondamental : X̃ 2B1) a été identifié pour la première fois dans le domaine des ondes millimétriques. Ce radical a été produit en phase gazeuse par réaction d’atomes de chlore (obtenus par décharge micro-ondes dans Cl2 à 2450 MHz) avec CH3I ou CH2I2 comme précurseurs. Au total 331 transitions rotationnelles de type a de la branche R ont été observées, et les structures fines et hyperfines ont été résolues. Ces résultats ont ainsi permis de compléter l’étude des ra

APA, Harvard, Vancouver, ISO, and other styles

10

Zheng, Yexin. "Novel RTD-Based Threshold Logic Design and Verification." Thesis, Virginia Tech, 2008. http://hdl.handle.net/10919/32011.

Full text

Abstract:

Innovative nano-scale devices have been developed to enhance future circuit design to overcome physical barriers hindering complementary metal-oxide semiconductor (CMOS) technology. Among the emerging nanodevices, resonant tunneling diodes (RTDs) have demonstrated promising electronic features due to their high speed switching capability and functional versatility. Great circuit functionality can be achieved through integrating heterostructure field-effect transistors (HFETs) in conjunction with RTDs to modulate effective negative differential resistance (NDR). However, RTDs are intrinsically

APA, Harvard, Vancouver, ISO, and other styles

More sources

Books on the topic "Diode structure"

1

United States. National Aeronautics and Space Administration., ed. [Building an LO source at 1036 GHz for a receiver]: Final technical report. National Aeronautics and Space Administration, 1995.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

2

United States. National Aeronautics and Space Administration., ed. [ Building an LO source at 1036 GHz for a receiver]: Final technical report. National Aeronautics and Space Administration, 1995.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

3

C, Bensahel Daniel, Canham Leigh T, and Ossicini Stephano, eds. Optical properties of low dimensional silicon structures. Kluwer Academic Publishers, 1993.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

4

Salaneck, W. R. Conjugated polymer surfaces and interfaces: Electronic and chemical structure of interfaces for polymer light emitting devices. Cambridge University Press, 1996.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

5

Bilici, Deniz. Tarih dilde can buluyor: Çekmeköy : bir sözlü tarih çalışması. Çekmeköy Belediyesi Kültür ve Sosyal İşler Müdürlüğü, 2014.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

6

Vserossiĭskoe soveshchanie "Nitridy gallii︠a︡, indii︠a︡ i ali︠u︡minii︠a︡--struktury i pribory" (2nd 1998 St. Petersburg, Russia). Nitridy gallii︠a︡, indii︠a︡ i ali︠u︡minii︠a︡--struktury i pribory: Materialy 2-go vserossiĭskogo soveshchanii︠a︡, 2 ii︠u︡nii︠a︡ 1998 g., Sankt-Peterburgskiĭ gosudarstvennyĭ tekhnicheskiĭ universitet = Gallium nitride, indium nitride, aluminum nitride--structures and devices : technical digest : the 2nd Russian Workshop, June 2, 1998, St.-Petersburg State Technical University. Sankt-Peterburgskiĭ gos. tekhn. universitet, 1998.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

7

Cheung, Cedric Ching. Electrical characteristics of the Al-ZnS-pSi-ntSi diode structure for electroluminescent devices: Assessment ofcapacitance-voltage and current-voltage.... 1986.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

8

Lam, Norman. Analysis and design of GaAs integrated series IMPATT structures. 1988.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

9

Yoo, Hyungmo. Effect of structural parameters on resonant tunneling diode performance. 1990.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

10

Segal, David. Let There Be Lights. Oxford University Press, 2017. http://dx.doi.org/10.1093/oso/9780198804079.003.0006.

Full text

Abstract:

Chapter 6 describes solid-state lighting. It covers electroluminescence light-emitting diodes, quantum dots, organic light-emitting diodes (OLEDs), liquid crystals and liquid crystal displays. The importance of synthesis of high purity semiconductors for lighting applications is stressed. Use of materials to produce clear white light is outlined. Association structures in solution such as micelles and liquid crystals are described.

APA, Harvard, Vancouver, ISO, and other styles

More sources

Book chapters on the topic "Diode structure"

1

Dobrzański, Leszek A., Marek Piec, Zuzanka Trojanová, Józef Lelątko, and Andrzej Klimpel. "Structure and Properties of Gradient Layers Using High Power Diode Laser." In Materials Science Forum. Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-423-5.269.

Full text

APA, Harvard, Vancouver, ISO, and other styles

2

Winterfeld, Henning, Hermann Kohlstedt, and Martin Ziegler. "MemFlash—Floating Gate Transistors as Memristors." In Springer Series on Bio- and Neurosystems. Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-36705-2_4.

Full text

Abstract:

AbstractThe idea of resistive switching devices is originally based on the fact that the application of electric fields changes the atomic structure locally and thus also the electronic structure of the material. This leads globally to a sustained change in the resistance of the material layer, which is generally referred to as resistive switching. In resistive switching devices, these atomic reconfigurations are reversible and allow the state to be maintained for a long time, which is why the devices are referred to as memristive devices (also named Memristor). Memristive devices can be reali

APA, Harvard, Vancouver, ISO, and other styles

3

Kobayashi, Masahide, Hiroyuki Sumitomo, Yutaka Kadoya, Masamichi Yamanishi, and Masahito Ueda. "Diode Structure for Generation of Sub-Poissonian Photon Fluxes by Stark-Effect Blockade of Emissions." In Quantum Communication, Computing, and Measurement. Springer US, 1997. http://dx.doi.org/10.1007/978-1-4615-5923-8_55.

Full text

APA, Harvard, Vancouver, ISO, and other styles

4

Yang, Yang, and Jayesh M. Bharathan. "Polymer—Metal Interfaces and the P-I-N Structure of the Polymer Light-Emitting Diode." In ACS Symposium Series. American Chemical Society, 1999. http://dx.doi.org/10.1021/bk-1999-0735.ch009.

Full text

APA, Harvard, Vancouver, ISO, and other styles

5

Zappe, Hans. "Laser Diode Structures." In Microtechnology and MEMS. Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-08249-2_4.

Full text

APA, Harvard, Vancouver, ISO, and other styles

6

Wu, Dan, Guo-wang Gao, Claude Richard, and Daniel Guyomar. "Synchronized Switch Damping with Diode (SSDD) Based on a Network of Piezoelectric Elements for Improved Vibration Damping of Smart Structure." In Proceedings of the International Petroleum and Petrochemical Technology Conference 2019. Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-15-0860-8_37.

Full text

APA, Harvard, Vancouver, ISO, and other styles

7

Blood, Peter, Damian L. Foulger, Peter M. Smowton, et al. "Modelling Quantum Well Laser Diode Structures." In Advanced Electronic Technologies and Systems Based on Low-Dimensional Quantum Devices. Springer Netherlands, 1998. http://dx.doi.org/10.1007/978-94-015-8965-9_2.

Full text

APA, Harvard, Vancouver, ISO, and other styles

8

Bhatnagar, P. K. "Organic Light-Emitting Diodes—A Review." In Advanced Structured Materials. Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-6214-8_10.

Full text

APA, Harvard, Vancouver, ISO, and other styles

9

Spagnuolo, Mario. "Circuit Analogies in the Search for New Metamaterials: Phenomenology of a Mechanical Diode." In Advanced Structured Materials. Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-38708-2_24.

Full text

APA, Harvard, Vancouver, ISO, and other styles

10

Lambrecht, A., A. Fach, R. Kurbel, B. Halford, H. Böttner, and M. Tacke. "Epitaxial Growth of Laterally Structured Lead Chalcogenide Lasers." In Monitoring of Gaseous Pollutants by Tunable Diode Lasers. Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-011-2763-9_8.

Full text

APA, Harvard, Vancouver, ISO, and other styles

Conference papers on the topic "Diode structure"

1

Burckel, Bruce. "Implications of oblique mode structure for high-power diode lasers." In High-Power Diode Laser Technology XXIII, edited by Erik P. Zucker, Jenna Campbell, and Mark S. Zediker. SPIE, 2025. https://doi.org/10.1117/12.3044526.

Full text

APA, Harvard, Vancouver, ISO, and other styles

2

Zhang, Ruigang, Yu Han, Qi Tian, et al. "Fabry–Pérot Laser Diode for WDM-PON with Temperature-insensitive Laser Spectral Envelope." In CLEO: Applications and Technology. Optica Publishing Group, 2024. http://dx.doi.org/10.1364/cleo_at.2024.jtu2a.39.

Full text

Abstract:

We propose a novel Fabry–Pérot laser diode with temperature-insensitive laser spectral envelope. By introducing a temperature-insensitive optical filter structure into the laser diode resonator, the laser spectral envelope shows substantially reduced temperature sensitivity.

APA, Harvard, Vancouver, ISO, and other styles

3

Nozaki, Shinichiro, Masao Kawaguchi, Takahiro Nibu, et al. "A high power InGaN laser array with built-in smile suppression structure." In High-Power Diode Laser Technology XVIII, edited by Mark S. Zediker. SPIE, 2020. http://dx.doi.org/10.1117/12.2544184.

Full text

APA, Harvard, Vancouver, ISO, and other styles

4

Kwak, Jeong-Geun, Seunghyeon Seong, Jong-Keun Park, Jeong-Hyun Park, An-Sik Choi, and Tae-Kyung Kim. "940nm high-power laser diode based on AlGaAs/InGaAs GRIN-SCH and asymmetric structure." In High-Power Diode Laser Technology XVII, edited by Mark S. Zediker. SPIE, 2019. http://dx.doi.org/10.1117/12.2507364.

Full text

APA, Harvard, Vancouver, ISO, and other styles

5

Blood, Peter, Damian Foulger, Peter M. Smowton, and Phil A. Mawby. "Simulation of GaInP laser diode structure." In Photonics West '97, edited by Marek Osinski and Weng W. Chow. SPIE, 1997. http://dx.doi.org/10.1117/12.275623.

Full text

APA, Harvard, Vancouver, ISO, and other styles

6

Knežević, Tihomir, and Lis K. Nanver. "Identifying nano-Schottky diode currents in silicon diodes with 2D interfacial layers." In 2023 35th International Conference on Microelectronic Test Structure (ICMTS). IEEE, 2023. http://dx.doi.org/10.1109/icmts55420.2023.10094164.

Full text

APA, Harvard, Vancouver, ISO, and other styles

7

Wang, Junrong, Qi Xiao, Hanbing Ke, Xu Hu, Shaodan Li, and Zhiguo Wei. "Numerical Simulation of Flow Instability in Vortex Diodes." In 2017 25th International Conference on Nuclear Engineering. American Society of Mechanical Engineers, 2017. http://dx.doi.org/10.1115/icone25-66512.

Full text

Abstract:

A vortex diode is used as a highly reliable check-valve in nuclear applications, where it mainly benefits from the intrinsic properties of no moving parts and no leakage. Its basic principle is similar to the diode in an electric circuit. The typical structure of a vortex diode consists of a chamber with axial and tangential ports. When the fluid is injected through the axial port, a simple radial flow in the chamber leads to a relatively low flow resistance. On the other hand, in the reverse flow mode, a strongly swirling vortex can be set up in the chamber, resulting in a very high flow resi

APA, Harvard, Vancouver, ISO, and other styles

8

Kim, Younghyun, Yunsu Sung, Jung-Tack Yang, and Woo-Young Choi. "Numerical analysis of high-power broad-area laser diode with improved heat sinking structure using epitaxial liftoff technique." In High-Power Diode Laser Technology XVI, edited by Mark S. Zediker. SPIE, 2018. http://dx.doi.org/10.1117/12.2288639.

Full text

APA, Harvard, Vancouver, ISO, and other styles

9

King, Ben, Seval Arslan, Anisuzzaman Boni, et al. "Buried-regrown-implant-structure diode lasers with ultra-thick epitaxy for resistance to mounting stress without loss in efficiency." In High-Power Diode Laser Technology XXI, edited by Mark S. Zediker and Erik P. Zucker. SPIE, 2023. http://dx.doi.org/10.1117/12.2647096.

Full text

APA, Harvard, Vancouver, ISO, and other styles

10

Bouchareb, S. "Structure, electronic properties of AlAs using first-principles calculations." In Advanced Topics in Mechanics of Materials, Structures and Construction. Materials Research Forum LLC, 2023. http://dx.doi.org/10.21741/9781644902592-22.

Full text

Abstract:

Abstract. Density functional theory has been used to study the structural and electronic properties of AlAs using generalized gradient approximation implemented through the WIEN2k code by the local density (LDA), generalized gradient approximations (GGAPBE), and generalized gradient approximation is given by Perdew-Burke-Ernzerhof (GGAPBE Sol) methods .The AlAs's cubic structure is mechanically stable in the Fd-3m space group and exhibits semi-conducteur behavior with a 2.259 eV indirect energy band gap (EG) along the Г-Χ. The optimized lattice is constant (a0=5,6605Å). The properties suggest

APA, Harvard, Vancouver, ISO, and other styles

Reports on the topic "Diode structure"

1

Kinzey, Bruce R., and Michael Myer. Demonstration Assessment of Light-Emitting Diode Parking Structure Lighting at U.S. Department of Labor Headquarters. Office of Scientific and Technical Information (OSTI), 2013. http://dx.doi.org/10.2172/1079130.

Full text

APA, Harvard, Vancouver, ISO, and other styles

2

Ury, I., and Kam Y. Lau. Band Structure Engineering for Ultra-Low Threshold Laser Diodes. Defense Technical Information Center, 1988. http://dx.doi.org/10.21236/ada206932.

Full text

APA, Harvard, Vancouver, ISO, and other styles

3

Golovacheva, Larissa. Integration modules for electronic systems. Intellectual Archive, 2024. http://dx.doi.org/10.32370/iaj.3067.

Full text

Abstract:

As the innovative practice of recent years has shown, one of the main issues and problems of complex smart electronic devices, especially those including laser diodes, is the issue of reliable and efficient cooling In order to eliminate energy losses and increase the output of effective energy, especially in various lighting systems, an active search is being carried out for integrative technical solutions that allow, without the use of additional structural elements and additional energy costs for cooling, In parallel, we are searching for and developing technical solutions that make it possi

APA, Harvard, Vancouver, ISO, and other styles

4

Boggess, Thomas F., Michael E. Flatte, Thomas C. Hasenberg, and Winston K. Chan. Band Structure Engineering of the Carrier-Induced Refractive Index in High-Power Midwave-Infrared Laser Diodes. Defense Technical Information Center, 2000. http://dx.doi.org/10.21236/ada380391.

Full text

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!