Log in

Relevant bibliographies by topics / Diode structure

Contents

Journal articles
Dissertations / Theses
Books
Book chapters
Conference papers
Reports

Academic literature on the topic 'Diode structure'

Author: Grafiati

Published: 28 May 2022

Last updated: 18 July 2025

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'Diode structure.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Journal articles on the topic "Diode structure"

1

Afanasyev, Alexey V., Boris V. Ivanov, Vladimir A. Ilyin, Alexey F. Kardo-Sysoev, Maria A. Kuznetsova, and Victor V. Luchinin. "Superfast Drift Step Recovery Diodes (DSRDs) and Vacuum Field Emission Diodes Based on 4H-SiC." Materials Science Forum 740-742 (January 2013): 1010–13. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.1010.

Full text

Abstract:

This paper presents the results of research and development of two types diode structures based on wide bandgap 4H-SiC: drift step recovery diodes (DSRDs) and field emission diodes (FED). Diodes’ structure and manufacturing methods are reviewed. Diode’s characteristics were obtained (static current-voltage characteristics and capacitor-voltage characteristic, switching properties’ characteristics for DSRDs). Field emission 4H-SiC structures illustrated high (≥102 А/сm2) current densities at electric field intensity of approximately 10V/um. 4H-SiC DSRDs in the generator structure with a single oscillating contour allowed to form sub nanosecond impulses at a load 50 Ohm and 1,5-2kV amplitude for a single diode (current density at V=2kV J= 4•103 А/сm2),what is significantly higher than similar DSRD’s parameters obtained for silicon.

APA, Harvard, Vancouver, ISO, and other styles

2

Polyntsev, Egor, Evgeny Erofeev, and Igor Yunusov. "The Influence of Design on Electrical Performance of AlGaN/GaN Lateral Schottky Barrier Diodes for Energy-Efficient Power Applications." Electronics 10, no. 22 (2021): 2802. http://dx.doi.org/10.3390/electronics10222802.

Full text

Abstract:

In this paper, lateral AlGaN/GaN Schottky barrier diodes are investigated in terms of anode construction and diode structure. An original GaN Schottky diode manufacturing-process flow was developed. A set of experiments was carried out to verify dependences between electrical parameters of the diode, such as reverse and forward currents, ON-state voltage, forward voltage and capacitance, anode-to-cathode distance, length of field plate, anode length, Schottky contact material, subanode recess depth, and epitaxial structure type. It was found that diodes of SiN/Al0.23Ga0.77N/GaN epi structure with Ni-based anodes demonstrated two orders of magnitude lower reverse currents than diodes with GaN/Al0.25Ga0.75N/GaN epitaxial structure. Diodes with Ni-based anodes demonstrated lower VON and higher IF compared with diodes with Pt-based anodes. As a result of these investigations, an optimal set of parameters was selected, providing the following electrical characteristics: VON = 0.6 (at IF = 1 mA/mm), forward voltage of the diode VF = 1.6 V (at IF = 100 mA/mm), maximum reverse voltage VR = 300 V, reverse leakage current IR = 0.04 μA/mm (at VR = −200 V), and total capacitance C = 3.6 pF/mm (at f = 1 MHz and 0 V DC bias). Obtained electrical characteristics of the lateral Schottky barrier diode demonstrate great potential for use in energy-efficient power applications, such as 5G multiband and multistandard wireless base stations.

APA, Harvard, Vancouver, ISO, and other styles

3

Etor, David, Linzi Emma Dodd, and Claudio Balocco. "High-Performance Atomic Layer Deposited Al2O3 Insulator Based Metal-Insulator-Metal Diode." FUOYE Journal of Engineering and Technology 7, no. 2 (2022): 174–78. http://dx.doi.org/10.46792/fuoyejet.v7i2.815.

Full text

Abstract:

The fabrication of metal–insulator– metal (MIM) diode using an ultrathin Al2O3 insulator layer, deposited using atomic layer deposition (ALD) is presented. The Al2O3 insulating layer was found to be highly uniform throughout the diode junction, effectively overcoming the main fabrication challenge in MIM diodes. The diodes exhibit strong non-linear current–voltage curves, have a typical zero-bias curvature coefficient of 5.4 V−1 and a zero-bias resistance of approximately 118 kΩ, a value considerably smaller than other MIM diode topologies and that allows more current to be rectified. Other results including current ratio and yield of the diode also competes favorably with the state-of-the-art MIM diodes such as the recently produced metal-octadecyltrichlorosilane (OTS)-metal structure.

APA, Harvard, Vancouver, ISO, and other styles

4

Konishi, Kumiko, Norifumi Kameshiro, Natsuki Yokoyama, Akio Shima, and Yasuhiro Shimamoto. "Influence of Trench Structure on Reverse Characteristics of 4H-SiC JBS Diodes." Materials Science Forum 821-823 (June 2015): 596–99. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.596.

Full text

Abstract:

We fabricated trench Junction Barrier Schottky (JBS) diodes, and investigated the effect on the reduction of leakage current and the device yield. First, by calculating of electric field at the Schottky contact interface (Es), we found that the trench JBS structure can reduce Es one digit smaller than the planar JBS structure, setting 80o < The bevel angle θ < 90o. Then, 600 V / 50 A trench JBS diodes are developed and characterized. The leakage current of a trench JBS diode at 600V is 10-2 times smaller than that of planar JBS diode by effectively reducing Es. This enables to reduce the number of low break down samples and raise the yield compared to the planar JBS structure.

APA, Harvard, Vancouver, ISO, and other styles

5

Zemliak, Alexander. "Models for IMPATT Diode Analysis and Optimization." WSEAS TRANSACTIONS ON COMMUNICATIONS 21 (June 30, 2022): 215–24. http://dx.doi.org/10.37394/23204.2022.21.26.

Full text

Abstract:

Some of nonlinear models for high-power pulsed IMPATT diode simulation and analysis is presented. These models are suitable for the analysis of the different operational modes of the oscillator. Its take into account the main electric and thermal phenomena in the semiconductor structure and the functional dependence of the equation coefficients on the electrical field and temperature. The first model is a precise one, which describes all important electrical phenomena on the basis of the continuity equations and Poisson equation and it is correct until 300 GHz. The second approximate mathematical model suitable for the analysis of IMPATT diode stationary operation oscillator and for optimization of internal structure of the diode. This model is based on the continuity equation system solution by reducing the boundary problem for the differential partial equations to a system of the ordinary differential equations. The temperature distribution in the semiconductor structure is obtained using the special thermal model of the IMPATT diode, which is based on the numerical solution of the non-linear thermal conductivity equation. The described models can be applied for analysis, optimization and practical design of pulsed-mode millimetric IMPATT diodes. Its can be also utilized for diode thermal regime estimation, for the proper selection of feed-pulse shape and amplitude, and for the development of the different type of complex doping-profile high-power pulsed millimetric IMPATT diodes with improved characteristics.

APA, Harvard, Vancouver, ISO, and other styles

6

Liu, Hai Rui, and Jun Sheng Yu. "Characterization of Metal-Semiconductor Schottky Diodes and Application on THz Detection." Advanced Materials Research 683 (April 2013): 729–32. http://dx.doi.org/10.4028/www.scientific.net/amr.683.729.

Full text

Abstract:

This paper presents a kind of air-bridged GaAs Schottky diodes which offer ultra low parasitic capacitance and series resistance in millimeter and THz wavelength. The Schottky barrier diodes have several advantages when used as millimeter wave and terahertz video, or power detectors. These include their fast time response, room temperature operation, simple structure and low cost. This paper describes the characterization of the metal-semiconductor Schottky diodes including principle, diode structure, non-linear voltage-current characteristic and signal-rectifying performance. For application, a quasi-optical THz detector was made by using the proposed Schottky diodes. It utilized a hyper hemispherical silicon lens to coupleand THz radiation to the diodes by integrating on a broadband planar bow-tie antenna. The measurement results of the Schottky diode based detector show a good room temperature performance.

APA, Harvard, Vancouver, ISO, and other styles

7

Zemliak, Alexander, and Eugene Machusky. "Analysis of Electrical and Thermal Models for Pulsed IMPATT Diode Simulation." WSEAS TRANSACTIONS ON CIRCUITS AND SYSTEMS 20 (July 12, 2021): 156–65. http://dx.doi.org/10.37394/23201.2021.20.19.

Full text

Abstract:

Some nonlinear models are presented for modeling and analyzing IMPATT high-power pulse diodes. These models are suitable for analyzing different operating modes of the oscillator. The first model is a precise one, which describes all important electrical phenomena on the basis of the continuity equations and Poisson´s equation, and it is correct until 300 GHz. The second approximate mathematical model suitable for the analysis of IMPATT diode stationary operation oscillator and for optimization of internal structure of the diode. The temperature distribution in the semiconductor structure is obtained using the special thermal model of the IMPATT diode, which is based on the numerical solution of the non-linear thermal conductivity equation. The described models can be applied for the analysis, optimization and practical design of pulsedmode millimetric IMPATT diodes. It can also be used to evaluate the thermal behavior of diodes, to correctly select the shape and amplitude of a supply pulse, and to design various types of high-power pulsed millimeter IMPATT diodes with a complex doping profile with improved characteristics.

APA, Harvard, Vancouver, ISO, and other styles

8

Shashikala, B. N., and B. S. Nagabhushana. "Reduction of reverse leakage current at the TiO2/GaN interface in field plate Ni/Au/n-GaN Schottky diodes." Semiconductor Physics, Quantum Electronics and Optoelectronics 24, no. 04 (2021): 399–406. http://dx.doi.org/10.15407/spqeo24.04.399.

Full text

Abstract:

This paper presents the fabrication procedure of TiO2 passivated field plate Schottky diode and gives a comparison of Ni/Au/n-GaN Schottky barrier diodes without field plate and with field plate of varying diameters from 50 to 300 µm. The influence of field oxide (TiO2) on the leakage current of Ni/Au/n-GaN Schottky diode was investigated. This suggests that the TiO2 passivated structure reduces the reverse leakage current of Ni/Au/n-GaN Schottky diode. Also, the reverse leakage current of Ni/Au/n-GaN Schottky diodes decreases as the field plate length increases. The temperature-dependent electrical characteristics of TiO2 passivated field plate Ni/Au/n-GaN Schottky diodes have shown an increase of barrier height within the temperature range 300…475 K.

APA, Harvard, Vancouver, ISO, and other styles

9

Mohd Akhbar, Siti Amiera, Kan Yeep Choo, and Duu Sheng Ong. "Enhanced InP-based Gunn Diodes with Notch-d-doped Structure for Low-THz Applications." Journal of Engineering Technology and Applied Physics 5, no. 1 (2023): 1–4. http://dx.doi.org/10.33093/jetap.2023.5.1.1.

Full text

Abstract:

In this work, Monte Carlo simulation is performed for InP Gunn diode with a notch-d-doped structure. It is found that the presence of the d-doped layer has improved the Gunn diode performance significantly as compared to the conventional notch structure. The d-doped effect caused an increment in the fundamental operating frequency and current harmonic amplitude in InP Gunn diodes by modifying the electric field profile within the device. An InP notch-d-doped Gunn diode with device length of 800 nm under 3V DC bias is capable of producing AC current signal of 287 GHz, reaching the THz region, with its harmonic amplitude being 5.68×108 A/m2. It is observed that InP-based notch-d-doped Gunn diode is able to generate signals at a higher operating frequency with a larger output power as compared to that of GaAs due to the higher electron drift velocity and threshold field in InP material.

APA, Harvard, Vancouver, ISO, and other styles

10

RAZEGHI, MANIJEH. "GaN-BASED LASER DIODES." International Journal of High Speed Electronics and Systems 09, no. 04 (1998): 1007–80. http://dx.doi.org/10.1142/s0129156498000415.

Full text

Abstract:

We discuss optical properties of III-Nitride materials and structures. These properties are critical for the development of III-Nitride-based light-emitting diodes and laser diodes. Minority carrier diffusion length in GaN has been determined to be ~ 0.1 μm. The properties of lasing in GaN have been studied using optical pumping. The red shift of emission peak observed in stimulated emission of GaN has been modeled and attributed to many-body interactions at high excitation. The correlation of photoluminescence and optical pumping has shown that band-to-band, or shallow donor-related bandtail to valence band transition is the necessary mechanism of lasing in GaN. This work showed that the thermal instability of InGaN at growth temperature is of main concern in the fabrication of InGaN-based MQW laser diode structures. Photoluminescence has shown that the InGaN composition is very sensitive to the growth temperature. Therefore InGaN growth temperature should be strictly controlled during InGaN-based MQW growth. This work discovered that proper annealing of Si-doping of InGaN/GaN MQW structures that are properly annealed could reduce the lasing threshold and improve the slope efficiency. Over-annealing of these MQWs can lead to thermal degradation of the active layer. Si-doping in over-annealed MQW structure further degrades its quality. The degradation has been attributed to the increase of defects and/or nonuniform local potential formation. P-type doping on the top of InGaN/GaN could also lead to the formation of compensation layer which also degrades laser diode performances. Optical confinement and carrier confinement in InGaN-based laser diode structures are evaluated for optimum laser diode design. The state-of-the-art and fundamental issues of InGaN-based light-emitting diodes and laser diodes are discussed.

APA, Harvard, Vancouver, ISO, and other styles

More sources

Dissertations / Theses on the topic "Diode structure"

1

Rimmer, Nicholas. "Structure-property relationships in a resonant tunnelling diode." Thesis, University of Cambridge, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.308244.

Full text

APA, Harvard, Vancouver, ISO, and other styles

2

Perez, Gaëtan. "Caractérisation de diodes Schottky en diamant de structure pseudo-verticale." Thesis, Université Grenoble Alpes (ComUE), 2018. http://www.theses.fr/2018GREAT051/document.

Full text

Abstract:

Le diamant est souvent défini comme le matériau ultime pour la réalisation de composants à semi-conducteurs pour des applications d'électronique de puissance. Bien que plusieurs interrupteurs de puissance en diamant soient parus à l'échelle mondiale, ils sont à l'heure actuelle à l'état de prototype et de preuve de concept. Il est donc nécessaire de comprendre leurs mécanismes de fonctionnement afin de pouvoir utiliser tout leur potentiel dans des convertisseurs de puissance. Dans cette thèse, l'analyse se focalise sur des diodes Schottky en diamant de structure pseudo-verticale. Des caractérisations statiques et en commutation des diodes Schottky ont tout d'abord été réalisées. Elles ont permis d'extraire les caractéristiques des composants et de les intégrer dans des convertisseurs de puissance afin d'analyser leur comportement en commutation. L'utilisation et la gestion des diodes dans des convertisseurs ont ensuite été étudiées. Ces études ont permis de proposer des modifications de la structure des diodes afin d'améliorer la performance de leur intégration dans des convertisseurs de puissance. Finalement l'analyse théorique des performances d'une diode Schottky en diamant dans un convertisseur est réalisée. La comparaison entre ces performances et celles d'une diode Schottky en SiC a permis de mettre en évidence les particularités des composants en diamant ainsi que les bénéfices qu'ils peuvent apporter à l'électronique de puissance<br>Diamond is considered as the ultimate semiconductor for power electronics applications. Even if diamond semiconductor devices have been realized worldwide, it is still prototype or proof of concept devices. It is then necessary to understand how do they operate to use their entire benefits in power converters. In this thesis, we focused the analysis on pseudo-vertical diamond Schottky diodes. Firstly, static and switching characterizations have been realized. They allow us to extract devices characteristics in the way to integrate them in power converters to analyze their switching abilities. Management of diodes in power converters is then studied. These studies allow us to propose device structure modifications in the way to improve diodes performances and their integration in power converters. Finally, a theoretical analysis on a diamond Schottky diode performances in a power converter is realized. It has been compared to the performances of a SiC Schottky diode. It highlights the particularities of diamond devices and the benefits they might bring to power electronics applications

APA, Harvard, Vancouver, ISO, and other styles

3

Sicard, Lambert. "Assemblages linéaires et cycliques d’unités fluorènes pour l’électronique organique : relations structure-propriétés." Thesis, Rennes 1, 2018. http://www.theses.fr/2018REN1S066/document.

Full text

Abstract:

Les oligophénylènes constituent une classe de molécules centrale dans la conception de semi-conducteurs organiques pour des applications optoélectroniques. Ces travaux portent sur la synthèse et l’étude approfondie de dérivés linéaires et cycliques du fluorène (un biphényle rigidifié par un pont méthylène), fragment constitutif essentiel dans l’électronique organique. Nous nous intéressons en particulier aux relations structure-propriétés de ces systèmes π-conjugués. Dans une première partie, avec comme cadre le développement de matériaux hôtes pour diodes électroluminescentes (PhOLEDs), nous présentons une étude de la régioisomérie de phényl-fluorènes et de phényl-spirobifluorènes. Ses résultats ont permis la préparation de quatre matériaux hôtes purs hydrocarbures, dimères de spirobifluorène, intégrés dans des PhOLEDs bleues à hautes performances. Dans une seconde partie, nous nous intéressons au domaine récent des nano-anneaux moléculaires, objets cycliques présentant une conjugaison π de nature singulière. Après une revue bibliographique portant sur les cycloparaphénylènes et leurs propriétés, nous présentons nos études concernant plusieurs exemples de leurs analogues pontés : les cycloparafluorènes<br>Oligophenylenes constitute a major class of molecules in the design of organic semiconductors for optoelectronics applications. This work involves the synthesis and in-depth study of linear and cyclic derivatives of fluorene (a biphenyl rigidified by a methylene bridge), an essential building block in organic electronics. We focus our attention on the structure-property relationships of these π-conjugated systems. In a first part, within the framework of host materials for phosphorescent organic light-emitting diodes (PhOLEDs), we present a regioisomerism study of phenyl-fluorenes and phenyl-spirobifluorenes. Its results enabled the preparation of four pure hydrocarbon host materials, spirobifluorene dimers, used in high-performance blue PhOLEDs. In a second part, we take interest in the emerging field of molecular nanorings, cyclic objects presenting a singular nature of π-conjugation. After a bibliographical review covering cycloparaphenylenes and their properties, we present our studies regarding several examples of their bridged analogues: cycloparafluorenes

APA, Harvard, Vancouver, ISO, and other styles

4

Wang, Jinghui. "Fabrication, Characterization and Simulation of Sandwich Structure GaN Schottky Diode Ionizing Radiation Detectors." The Ohio State University, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=osu1405497243.

Full text

APA, Harvard, Vancouver, ISO, and other styles

5

Boukadida, Nourredine. "Etude d'une structure a effet de diode thermique : application au chauffage solaire d'un local." Poitiers, 1986. http://www.theses.fr/1986POIT2287.

Full text

Abstract:

Etude de l'optimisation de l'effet de diode thermique d'une structure pouvant servir de paroi d'un local. Definition d'une structure alveolaire a lamelles. Etude numerique approchee du comportement thermique journalier et annuel d'un local a structure a effet diode

APA, Harvard, Vancouver, ISO, and other styles

6

Boukadida, Nourredine. "Etude d'une structure à effet de diode thermique application au chauffage solaire d'un local." Grenoble 2 : ANRT, 1986. http://catalogue.bnf.fr/ark:/12148/cb37596309f.

Full text

APA, Harvard, Vancouver, ISO, and other styles

7

Crow, Martin Brian. "High resolution diode laser spectroscopy of transient species." Thesis, University of Oxford, 2012. http://ora.ox.ac.uk/objects/uuid:64bd9688-fdb3-4d05-ac2b-2a9bb621bb7c.

Full text

Abstract:

This thesis presents applications of near infrared diode lasers to high resolution spectroscopy of transient radical species. Firstly, time resolved near infrared laser gain versus absorption is utilised in Chapter 2 to determine the I∗ quantum yield following ultraviolet photolysis of iodobenzene and its fluorinated analogues. The experimental method is first confirmed by comparison with literature values of the quantum yield for iodomethane photolysis, returning a quantum yield of Φ(I∗) = 0.71 ± 0.04 in good agreement with the literature, before being applied to determine the I∗ quantum yield following 248 nm and 266 nm photolysis of iodobenzene (Φ(I<sup>∗</sup>) = 0.28 ± 0.04) and pentafluoroiodobenzene (Φ(I<sup>∗</sup>) = 0.32 ± 0.05). The I<sup>∗</sup> quantum yields for 4-fluoroiodobenzene, 2,4-difluoroiodobenzene and 3,5-difluoroiodobenzene are also reported in order to determine the effect of selective fluorination on the dynamics of the photodissociation process. This work complements velocity-map ion imaging studies and spin-orbit resolved ab initio calculations of the ultraviolet photolysis of these compounds. Chapter 3 details the development of a narrow-bandwidth tunable continuous wave ultraviolet radiation source, through sum frequency mixing of tunable near infrared diode lasers with a fixed frequency, high powered, solid state laser. The application of the UV radiation source to spectroscopy of the A<sup> 1</sup>A<sub>2</sub> − X<sup> 1</sup>A<sub>1</sub> electronic band of formaldehyde is explored, where absolute absorption cross sections are determined for rotational transitions within the 220410 and 220430 vibronic bands. The sub-Doppler resolution has allowed refinement of the rotational constants for the slowly predissociating excited state of the 2<sup>2</sup><sub>0</sub>4<sup>3</sup><sub>0</sub> vibronic band. The lifetimes of several rotational levels is determined to be in the range 0.74 ns to 1.46 ns. In Chapter 4 the UV radiation source developed in Chapter 3 is applied to the A <sup>2</sup>Σ<sup>+</sup> − X <sup>2</sup>Π electronic band of the OH radical. Firstly, this source is utilised to probe a continuous supply of hydroxyl radicals using cavity-enhanced absorption spectroscopy and wavelength modulation spectroscopy. Pressure induced broadening parameters for the Q<sub>1</sub>(2) rotational transition for He, Ne, Ar and N<sub>2</sub> buffer gases are also measured. Following the successful application of this source to probe a continuous OH source at atmospheric pressure, the UV spectrometer is used to probe OH radicals from nitric acid photolysis at 193 nm, where the nascent speed distribution and Doppler lineshape is shown to be in excellent agreement with the literature. Time resolved absorption spectroscopy of the nascent OH fragment also returns a translational relaxation constant of k<sub>trans</sub> = (3.85±1.06)×10<sup>−10</sup>cm<sup>3</sup>molecule<sup>−1</sup>s<sup>−1</sup>, which is in good agreement with literature values. These preliminary results indicate the potential of this narrow-bandwidth tunable UV source as an absorption-spectroscopy-based probe of nascent Doppler profiles. Chapter 5 presents the application of frequency-modulated radiation from a near infrared diode laser as a probe of the angular momentum polarisation of the nascent CN fragments, produced by 266 nm photolysis of ICN. These CN fragments are probed in the high rotational states of both the ground and first excited vibrational level on the A <sup>2</sup>Π − X <sup>2</sup>Σ<sup>+</sup> electronic transition; in particular these constitute the first measurements of alignment and orientation in the first excited vibrational level at this photolysis wavelength. The alignment parameters reported for both vibrational levels are comparable, indicating that the incoherent dynamics contributing to their formation are the same. In contrast, the orientation of the v = 1 CN fragment is shown to be of opposite sign to that of v = 0 at this photolysis wavelength, although the absolute differences in their orientation parameters are similar to that observed for photolysis at 248 nm. This observation is consistent with coherent orientation arising from phase differences between wavepackets propagating on multiple excited potential energy surfaces.

APA, Harvard, Vancouver, ISO, and other styles

8

Baran, Stuart George. "Gas-phase detection methods using diode lasers." Thesis, University of Oxford, 2009. http://ora.ox.ac.uk/objects/uuid:43e8ec07-9e1a-4060-bc8b-be75c8565600.

Full text

Abstract:

Diode lasers are a convenient and economical source of near-infrared radiation, which may usefully be applied to a host of diﬀerent sensitive detection methods; this thesis presents novel extensions of these methods, making use of the favourable characteristics of this type of light source. The ﬁrst part of this thesis details the development of an optical feedback cavity-enhanced absorption spectroscopy (OF-CEAS) apparatus, including the development of the optical system, the sample handling, and the electronics for feedback phase control. A preliminary demonstration of the system is reported, presenting the detection of atmospheric water absorptions close to 1596 nm. Optimisation and application of the OF-CEAS spectrometer are then demonstrated, after which the spectrometer is applied to the sensitive detection of carbon dioxide absorptions suitable as a diagnostic aid in identifying Heliobacter pylori infection. A time-normalised α-min value of 5.8 × 10<sup>−9</sup> cm<sup>−1</sup>s<sup>1/2</sup> was measured for these spectra. Further optimisation of the system leads to an ultimate detection sensitivity of 1.42 × 10<sup>−9</sup> cm<sup>−1</sup>s<sup>1/2</sup>, measured on absorption transitions in acetylene close to 1532 nm. In order further to characterise the performance of the OF-CEAS system, analogous experiments are presented using the OF-CEAS setup and a standard diode-laser cavity-enhanced absorption spectroscopy (CEAS) apparatus. Detection is carried out on the P(6) line of the ν<sub>1</sub> + ν<sub>3</sub> vibrational band of the mixed isotopologue of acetylene, <sup>12</sup>-C<sup>13</sup>-CH<sub>2</sub>. Direct comparison is made between the sensitivities of the two methods, and in light of this the suitability of each technique for detection in diﬀerent environments is considered. The well-characterised and consistent frequency scale which is inherent to the OF-CEAS technique is then applied to a line shape analysis for the presented absorption spectra. Pressure-broadening coeﬃcients are determined for selected absorptions in the ν<sub>1</sub> + ν<sub>3</sub> band of acetylene. In spite of the low resolution associated with this technique, this accurate frequency scaling allows observation of subtle line shape eﬀects such as Dicke collisional narrowing using the data presented in Chapter 3 for the R(60) line in the 3ν<sub>1</sub> + ν<sub>3</sub> vibrational band of CO<sub>2</sub>. These eﬀects are quantiﬁed through use of a Galatry ﬁt to each absorption spectrum. The statistical signiﬁcance associated with the use of such a model, and the physical meaning of the results, are examined and discussed. An alternative strategy for increasing the sensitivity of a diode-laser-based gas monitoring technique lies in moving detection to the mid-infrared region, where the absorption cross-sections are generally larger. With this motivation, diﬀerence frequency generation is presented, to produce radiation close to 3.5 µm which is then applied to a series of diﬀerent enhanced spectroscopy techniques. The optimal sensitivity, of 32 ppb NO2 at 45 Torr total sample pressure, was achieved using wavelength modulation spectroscopy. The diﬀerent techniques are compared and possible improvements to them are put forward. Finally, proof-of-principle work is presented seeking to combine the enhanced circulating power associated with the optical-feedback-locked techniques and non-linear optical techniques to move detection to a more favourable spectral region. Light close to 429 nm is generated by second harmonic generation in a crystal of potassium niobate, with resonance-enhancement aﬀorded by a feedback V-cavity of the sort employed in OF-CEAS. The potential of such a system for diode-laser-based generation of blue and ultraviolet light is demonstrated and discussed, along with improvements that might be implemented to increase the eﬃciency of the system.

APA, Harvard, Vancouver, ISO, and other styles

9

Skřínský, Jan. "Microwave and diode laser spectroscopy of discharge and flame plasma." Thesis, Lille 1, 2010. http://www.theses.fr/2010LIL10151.

Full text

Abstract:

Deux études principales ont été menées au cours de ce travail. D’une part, le spectre de rotation pure du radical iodomethyle (état fondamental : X̃ 2B1) a été identifié pour la première fois dans le domaine des ondes millimétriques. Ce radical a été produit en phase gazeuse par réaction d’atomes de chlore (obtenus par décharge micro-ondes dans Cl2 à 2450 MHz) avec CH3I ou CH2I2 comme précurseurs. Au total 331 transitions rotationnelles de type a de la branche R ont été observées, et les structures fines et hyperfines ont été résolues. Ces résultats ont ainsi permis de compléter l’étude des radicaux halogénés CH2X (X = F, Cl, Br et I) effectuée au laboratoire PhLAM. La structure électronique de CH2I a pu être obtenue avec précision. Les constantes d'interaction fine et hyperfine obtenues sont en accord avec la symétrie 2B1, c'est à dire que l'électron non apparié occupe une orbitale pπ s'étendant perpendiculairement au plan de la molécule. D’autre part, des études par spectroscopie infrarouge ont été menées sur différentes espèces moléculaires, stables (C3H4, OCS et CH3OH) et réactives (l’ion ArD+ et le radical CN•) afin de tester la possibilité de surveillance de gaz présents dans l’atmosphère sous forme de trace. Ainsi, le concept de la variance d'Allan a été utilisé avec deux méthodes expérimentales bien connues dans le domaine de la détection de gaz présents sous forme de trace : la spectroscopie à diode laser et la spectroscopie photoacoustique à laser CO2. La détection des molécules et d’espèces réactives (O3•, CN•, ArD+) a été comparée sur la base des calculs de la variance d'Allan<br>Two studies have been carried out during this work. On the one hand, pure rotational spectrum of the gas phase of the monoiodomethyl radical (ground state: X̃2B1) has been observed for the first time in the millimeter¬wave region. The CH2I• radical was created by the reaction of either diiodomethane (CH2I2) or iodomethane (CH3I) with the products of 2450 MHz microwave discharge of Cl2. The 331 millimeterwave a-type R-branch transitions have been observed with fully resolved fine and partly resolved hyperfine components. The small positive inertial defect, Δ0 = 0.03665(3) amu.A2, indicates that the radical is planar in the ground vibronic state. The observed fine and hyperfine interaction constants are consistent with 2B1 symmetry, i.e. with the unpaired electron occupying a pπ orbital extending perpendicular to the molecular plane. On the other hand, infrared spectroscopic studies on several molecular species, stable (C3H4, OCS and CH3OH) and reactive (the ion ArD+, the radicals CN• and O3•) have been carried out to test the possibility of atmospheric trace gas monitoring. Based on the mathematical evaluation of the calculated signal-to-noise ratios of absorption spectra, optimum values of frequency and amplitude modulation were found. The concept of the Allan variance has then been utilized with two experimental methods well-known for the detection of trace gas: diode-laser spectroscopy and CO2 laser photoacoustic spectroscopy. Detection of the above mentioned stable molecules and reactive unstable species have been compared on the basis of Allan variance calculations

APA, Harvard, Vancouver, ISO, and other styles

10

Zheng, Yexin. "Novel RTD-Based Threshold Logic Design and Verification." Thesis, Virginia Tech, 2008. http://hdl.handle.net/10919/32011.

Full text

Abstract:

Innovative nano-scale devices have been developed to enhance future circuit design to overcome physical barriers hindering complementary metal-oxide semiconductor (CMOS) technology. Among the emerging nanodevices, resonant tunneling diodes (RTDs) have demonstrated promising electronic features due to their high speed switching capability and functional versatility. Great circuit functionality can be achieved through integrating heterostructure field-effect transistors (HFETs) in conjunction with RTDs to modulate effective negative differential resistance (NDR). However, RTDs are intrinsically suitable for implementing threshold logic rather than Boolean logic which has dominated CMOS technology in the past. To fully take advantage of such emerging nanotechnology, efficient design methodologies and design automation tools for threshold logic therefore become essential. In this thesis, we first propose novel programmable logic elements (PLEs) implemented in threshold gates (TGs) and multi-threshold threshold gates (MTTGs) by exploring RTD/ HFET monostable-bistable transition logic element (MOBILE) principles. Our three-input PLE can be configured through five control bits to realize all the three-variable logic functions, which is, to the best of our knowledge, the first single RTD-based structure that provides complete logic implementation. It is also a more efficient reconfigurable circuit element than a general look-up table which requires eight configuration bits for three-variable functions. We further extend the design concept to construct a more versatile four-input PLE. A comprehensive comparison of three- and four-input PLEs provides an insightful view of design tradeoffs between performance and area. We present the mathematical proof of PLE's logic completeness based on Shannon Expansion, as well as the HSPICE simulation results of the programmable and primitive RTD/HFET gates that we have designed. An efficient control bit generating algorithm is developed by using a special encoding scheme to implement any given logic function. In addition, we propose novel techniques of formulating a given threshold logic in conjunctive normal form (CNF) that facilitates efficient SAT-based equivalence checking for threshold logic networks. Three different strategies of CNF generation from threshold logic representations are implemented. Experimental results based on MCNC benchmarks are presented as a complete comparison. Our hybrid algorithm, which takes into account input symmetry as well as input weight order of threshold gates, can efficiently generate CNF formulas in terms of both SAT solving time and CNF generating time.<br>Master of Science

APA, Harvard, Vancouver, ISO, and other styles

More sources

Books on the topic "Diode structure"

1

United States. National Aeronautics and Space Administration., ed. [Building an LO source at 1036 GHz for a receiver]: Final technical report. National Aeronautics and Space Administration, 1995.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

2

United States. National Aeronautics and Space Administration., ed. [ Building an LO source at 1036 GHz for a receiver]: Final technical report. National Aeronautics and Space Administration, 1995.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

3

C, Bensahel Daniel, Canham Leigh T, and Ossicini Stephano, eds. Optical properties of low dimensional silicon structures. Kluwer Academic Publishers, 1993.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

4

Salaneck, W. R. Conjugated polymer surfaces and interfaces: Electronic and chemical structure of interfaces for polymer light emitting devices. Cambridge University Press, 1996.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

5

Bilici, Deniz. Tarih dilde can buluyor: Çekmeköy : bir sözlü tarih çalışması. Çekmeköy Belediyesi Kültür ve Sosyal İşler Müdürlüğü, 2014.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

6

Vserossiĭskoe soveshchanie "Nitridy gallii︠a︡, indii︠a︡ i ali︠u︡minii︠a︡--struktury i pribory" (2nd 1998 St. Petersburg, Russia). Nitridy gallii︠a︡, indii︠a︡ i ali︠u︡minii︠a︡--struktury i pribory: Materialy 2-go vserossiĭskogo soveshchanii︠a︡, 2 ii︠u︡nii︠a︡ 1998 g., Sankt-Peterburgskiĭ gosudarstvennyĭ tekhnicheskiĭ universitet = Gallium nitride, indium nitride, aluminum nitride--structures and devices : technical digest : the 2nd Russian Workshop, June 2, 1998, St.-Petersburg State Technical University. Sankt-Peterburgskiĭ gos. tekhn. universitet, 1998.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

7

Cheung, Cedric Ching. Electrical characteristics of the Al-ZnS-pSi-ntSi diode structure for electroluminescent devices: Assessment ofcapacitance-voltage and current-voltage.... 1986.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

8

Lam, Norman. Analysis and design of GaAs integrated series IMPATT structures. 1988.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

9

Yoo, Hyungmo. Effect of structural parameters on resonant tunneling diode performance. 1990.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

10

Segal, David. Let There Be Lights. Oxford University Press, 2017. http://dx.doi.org/10.1093/oso/9780198804079.003.0006.

Full text

Abstract:

Chapter 6 describes solid-state lighting. It covers electroluminescence light-emitting diodes, quantum dots, organic light-emitting diodes (OLEDs), liquid crystals and liquid crystal displays. The importance of synthesis of high purity semiconductors for lighting applications is stressed. Use of materials to produce clear white light is outlined. Association structures in solution such as micelles and liquid crystals are described.

APA, Harvard, Vancouver, ISO, and other styles

More sources

Book chapters on the topic "Diode structure"

1

Dobrzański, Leszek A., Marek Piec, Zuzanka Trojanová, Józef Lelątko, and Andrzej Klimpel. "Structure and Properties of Gradient Layers Using High Power Diode Laser." In Materials Science Forum. Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-423-5.269.

Full text

APA, Harvard, Vancouver, ISO, and other styles

2

Winterfeld, Henning, Hermann Kohlstedt, and Martin Ziegler. "MemFlash—Floating Gate Transistors as Memristors." In Springer Series on Bio- and Neurosystems. Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-36705-2_4.

Full text

Abstract:

AbstractThe idea of resistive switching devices is originally based on the fact that the application of electric fields changes the atomic structure locally and thus also the electronic structure of the material. This leads globally to a sustained change in the resistance of the material layer, which is generally referred to as resistive switching. In resistive switching devices, these atomic reconfigurations are reversible and allow the state to be maintained for a long time, which is why the devices are referred to as memristive devices (also named Memristor). Memristive devices can be realized as two terminal devices in a metal-insulator-metal structure. In the MemFlash cell, there is no atomic rearrangement in the device and therefore is a purely electronic based switching device. The basic components of the MemFlash cell are floating gate transistors, which are reduced from a three-terminal to a two-terminal device by means of a diode-like wiring scheme and thus exhibit memristive switching behavior. In this book chapter, the MemFlash cell is introduced.

APA, Harvard, Vancouver, ISO, and other styles

3

Kobayashi, Masahide, Hiroyuki Sumitomo, Yutaka Kadoya, Masamichi Yamanishi, and Masahito Ueda. "Diode Structure for Generation of Sub-Poissonian Photon Fluxes by Stark-Effect Blockade of Emissions." In Quantum Communication, Computing, and Measurement. Springer US, 1997. http://dx.doi.org/10.1007/978-1-4615-5923-8_55.

Full text

APA, Harvard, Vancouver, ISO, and other styles

4

Yang, Yang, and Jayesh M. Bharathan. "Polymer—Metal Interfaces and the P-I-N Structure of the Polymer Light-Emitting Diode." In ACS Symposium Series. American Chemical Society, 1999. http://dx.doi.org/10.1021/bk-1999-0735.ch009.

Full text

APA, Harvard, Vancouver, ISO, and other styles

5

Zappe, Hans. "Laser Diode Structures." In Microtechnology and MEMS. Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-08249-2_4.

Full text

APA, Harvard, Vancouver, ISO, and other styles

6

Wu, Dan, Guo-wang Gao, Claude Richard, and Daniel Guyomar. "Synchronized Switch Damping with Diode (SSDD) Based on a Network of Piezoelectric Elements for Improved Vibration Damping of Smart Structure." In Proceedings of the International Petroleum and Petrochemical Technology Conference 2019. Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-15-0860-8_37.

Full text

APA, Harvard, Vancouver, ISO, and other styles

7

Blood, Peter, Damian L. Foulger, Peter M. Smowton, et al. "Modelling Quantum Well Laser Diode Structures." In Advanced Electronic Technologies and Systems Based on Low-Dimensional Quantum Devices. Springer Netherlands, 1998. http://dx.doi.org/10.1007/978-94-015-8965-9_2.

Full text

APA, Harvard, Vancouver, ISO, and other styles

8

Bhatnagar, P. K. "Organic Light-Emitting Diodes—A Review." In Advanced Structured Materials. Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-6214-8_10.

Full text

APA, Harvard, Vancouver, ISO, and other styles

9

Spagnuolo, Mario. "Circuit Analogies in the Search for New Metamaterials: Phenomenology of a Mechanical Diode." In Advanced Structured Materials. Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-38708-2_24.

Full text

APA, Harvard, Vancouver, ISO, and other styles

10

Lambrecht, A., A. Fach, R. Kurbel, B. Halford, H. Böttner, and M. Tacke. "Epitaxial Growth of Laterally Structured Lead Chalcogenide Lasers." In Monitoring of Gaseous Pollutants by Tunable Diode Lasers. Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-011-2763-9_8.

Full text

APA, Harvard, Vancouver, ISO, and other styles

Conference papers on the topic "Diode structure"

1

Burckel, Bruce. "Implications of oblique mode structure for high-power diode lasers." In High-Power Diode Laser Technology XXIII, edited by Erik P. Zucker, Jenna Campbell, and Mark S. Zediker. SPIE, 2025. https://doi.org/10.1117/12.3044526.

Full text

APA, Harvard, Vancouver, ISO, and other styles

2

Zhang, Ruigang, Yu Han, Qi Tian, et al. "Fabry–Pérot Laser Diode for WDM-PON with Temperature-insensitive Laser Spectral Envelope." In CLEO: Applications and Technology. Optica Publishing Group, 2024. http://dx.doi.org/10.1364/cleo_at.2024.jtu2a.39.

Full text

Abstract:

We propose a novel Fabry–Pérot laser diode with temperature-insensitive laser spectral envelope. By introducing a temperature-insensitive optical filter structure into the laser diode resonator, the laser spectral envelope shows substantially reduced temperature sensitivity.

APA, Harvard, Vancouver, ISO, and other styles

3

Nozaki, Shinichiro, Masao Kawaguchi, Takahiro Nibu, et al. "A high power InGaN laser array with built-in smile suppression structure." In High-Power Diode Laser Technology XVIII, edited by Mark S. Zediker. SPIE, 2020. http://dx.doi.org/10.1117/12.2544184.

Full text

APA, Harvard, Vancouver, ISO, and other styles

4

Kwak, Jeong-Geun, Seunghyeon Seong, Jong-Keun Park, Jeong-Hyun Park, An-Sik Choi, and Tae-Kyung Kim. "940nm high-power laser diode based on AlGaAs/InGaAs GRIN-SCH and asymmetric structure." In High-Power Diode Laser Technology XVII, edited by Mark S. Zediker. SPIE, 2019. http://dx.doi.org/10.1117/12.2507364.

Full text

APA, Harvard, Vancouver, ISO, and other styles

5

Blood, Peter, Damian Foulger, Peter M. Smowton, and Phil A. Mawby. "Simulation of GaInP laser diode structure." In Photonics West '97, edited by Marek Osinski and Weng W. Chow. SPIE, 1997. http://dx.doi.org/10.1117/12.275623.

Full text

APA, Harvard, Vancouver, ISO, and other styles

6

Knežević, Tihomir, and Lis K. Nanver. "Identifying nano-Schottky diode currents in silicon diodes with 2D interfacial layers." In 2023 35th International Conference on Microelectronic Test Structure (ICMTS). IEEE, 2023. http://dx.doi.org/10.1109/icmts55420.2023.10094164.

Full text

APA, Harvard, Vancouver, ISO, and other styles

7

Wang, Junrong, Qi Xiao, Hanbing Ke, Xu Hu, Shaodan Li, and Zhiguo Wei. "Numerical Simulation of Flow Instability in Vortex Diodes." In 2017 25th International Conference on Nuclear Engineering. American Society of Mechanical Engineers, 2017. http://dx.doi.org/10.1115/icone25-66512.

Full text

Abstract:

A vortex diode is used as a highly reliable check-valve in nuclear applications, where it mainly benefits from the intrinsic properties of no moving parts and no leakage. Its basic principle is similar to the diode in an electric circuit. The typical structure of a vortex diode consists of a chamber with axial and tangential ports. When the fluid is injected through the axial port, a simple radial flow in the chamber leads to a relatively low flow resistance. On the other hand, in the reverse flow mode, a strongly swirling vortex can be set up in the chamber, resulting in a very high flow resistance. Several experimental studies found vortex-induced vibration of a vortex diode in the reverse flow mode, where it indicated that the flow was unstable in the vortex diode. This phenomenon may affect the reliability of the vortex diode. However, the mechanism has not been investigated systematically and profoundly. In this paper, 3-D simulations are carried out to help understand the related flow characteristics in the vortex diode. Standard k-ε model was selected for forward flow, while Reynolds stress model was selected for reverse flow. We have found that the results from transient simulations are in good agreement with experimental data. The transient simulations also capture the periodic pressure fluctuation in the vortex diode. Vortex diodes with different structures and geometrical parameters are simulated at different Reynolds number conditions. It is found that the characteristics of the pressure fluctuation are determined by the structure parameters and working conditions of the vortex diode. The flow instability is mainly caused by the asymmetry of the vortex diode. The work presented in this paper will be useful to give better understanding of flows in vortex diodes and to provide some guidance for optimizing the vortex diode.

APA, Harvard, Vancouver, ISO, and other styles

8

Kim, Younghyun, Yunsu Sung, Jung-Tack Yang, and Woo-Young Choi. "Numerical analysis of high-power broad-area laser diode with improved heat sinking structure using epitaxial liftoff technique." In High-Power Diode Laser Technology XVI, edited by Mark S. Zediker. SPIE, 2018. http://dx.doi.org/10.1117/12.2288639.

Full text

APA, Harvard, Vancouver, ISO, and other styles

9

King, Ben, Seval Arslan, Anisuzzaman Boni, et al. "Buried-regrown-implant-structure diode lasers with ultra-thick epitaxy for resistance to mounting stress without loss in efficiency." In High-Power Diode Laser Technology XXI, edited by Mark S. Zediker and Erik P. Zucker. SPIE, 2023. http://dx.doi.org/10.1117/12.2647096.

Full text

APA, Harvard, Vancouver, ISO, and other styles

10

Bouchareb, S. "Structure, electronic properties of AlAs using first-principles calculations." In Advanced Topics in Mechanics of Materials, Structures and Construction. Materials Research Forum LLC, 2023. http://dx.doi.org/10.21741/9781644902592-22.

Full text

Abstract:

Abstract. Density functional theory has been used to study the structural and electronic properties of AlAs using generalized gradient approximation implemented through the WIEN2k code by the local density (LDA), generalized gradient approximations (GGAPBE), and generalized gradient approximation is given by Perdew-Burke-Ernzerhof (GGAPBE Sol) methods .The AlAs's cubic structure is mechanically stable in the Fd-3m space group and exhibits semi-conducteur behavior with a 2.259 eV indirect energy band gap (EG) along the Г-Χ. The optimized lattice is constant (a0=5,6605Å). The properties suggest that the material is also suitable for use as a photoconductor such as diodes, laser diode, optoelectronic devices, and such as light emitting diodes.

APA, Harvard, Vancouver, ISO, and other styles

Reports on the topic "Diode structure"

1

Kinzey, Bruce R., and Michael Myer. Demonstration Assessment of Light-Emitting Diode Parking Structure Lighting at U.S. Department of Labor Headquarters. Office of Scientific and Technical Information (OSTI), 2013. http://dx.doi.org/10.2172/1079130.

Full text

APA, Harvard, Vancouver, ISO, and other styles

2

Ury, I., and Kam Y. Lau. Band Structure Engineering for Ultra-Low Threshold Laser Diodes. Defense Technical Information Center, 1988. http://dx.doi.org/10.21236/ada206932.

Full text

APA, Harvard, Vancouver, ISO, and other styles

3

Golovacheva, Larissa. Integration modules for electronic systems. Intellectual Archive, 2024. http://dx.doi.org/10.32370/iaj.3067.

Full text

Abstract:

As the innovative practice of recent years has shown, one of the main issues and problems of complex smart electronic devices, especially those including laser diodes, is the issue of reliable and efficient cooling In order to eliminate energy losses and increase the output of effective energy, especially in various lighting systems, an active search is being carried out for integrative technical solutions that allow, without the use of additional structural elements and additional energy costs for cooling, In parallel, we are searching for and developing technical solutions that make it possible, with the most concise and simple design, to increase the output light power of lighting devices with a relatively low power and, accordingly, low energy consumption.

APA, Harvard, Vancouver, ISO, and other styles

4

Boggess, Thomas F., Michael E. Flatte, Thomas C. Hasenberg, and Winston K. Chan. Band Structure Engineering of the Carrier-Induced Refractive Index in High-Power Midwave-Infrared Laser Diodes. Defense Technical Information Center, 2000. http://dx.doi.org/10.21236/ada380391.

Full text

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!