Relevant bibliographies by topics / Ge/GaAs

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Ge/GaAs'

Author: Grafiati
Published: 28 May 2022
Last updated: 30 July 2025

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Journal articles on the topic "Ge/GaAs"

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Jones, K. M., M. M. Al-Jassim, and J. M. Olson. "Tem Observations of Interfacial Defects in Mocvd GaAs on Single Crystal Ge Substrates." Microscopy and Microanalysis 4, S2 (1998): 626–27. http://dx.doi.org/10.1017/s1431927600023254.

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The growth of high quality GaAs layers on single crystal Ge substrates has attracted a great deal of interest in recent years. Currently under development at NREL is the GaAs/GalnP-on-Ge high efficiency multi-junction solar cell. Unlike other heteroepitaxial systems such as GaAs-on-Si, physical properties such as the lattice parameter and thermal expansion coefficient of the Ge and GaAs are much closer. Further, Ge has a bandgap of 0.7 eV that makes it a suitable bottom cell in a multi-junction stack. However, the growth of GaAs on Ge is not a straightforward process, and little is known about
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Lalande, G., N. Guelton, D. Cossement, R. G. Saint-Jacques, and J. P. Dodelet. "Optimum growth conditions for the epitaxy of GaAs on Ge by close-spaced vapor transport." Canadian Journal of Physics 72, no. 5-6 (1994): 225–32. http://dx.doi.org/10.1139/p94-034.

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GaAs epitaxial layers are grown by close-spaced vapor transport (CSVT) on (100)Ge substrates and (100)Ge substrates misoriented 1.5° and 3° toward (011). Water vapor is used as the transport agent. When the temperatures of the GaAs source (T1) and of the Ge substrate (T2) are 800 and 750 °C, respectively, the growth rate is about 3 μm h−1. When an optimum source–substrate temperature evolution is followed, it is possible to grow specular layers of GaAs/Ge that contain only a small number (< 105 cm−2) of threading dislocations. All antiphase boundaries (APBs) annihilate close to the interfac
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Kavanagh, L., and Charles W. Magee. "Diffusion of Ge in GaAs at SiO2-encapsulated Ge–GaAs interfaces." Canadian Journal of Physics 65, no. 8 (1987): 987–90. http://dx.doi.org/10.1139/p87-157.

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The diffusion of Ge in semi-insulating GaAs was investigated for annealing temperatures in the range 650–800 °C. The samples consisted of electron-beam or metalorganic chemical-vapour deposition deposited Ge–GaAs interfaces encapsulated with SiO2. Ge diffusion profiles, measured with secondary-ion mass spectroscopy (SIMS), had a characteristic plateau and steep slope at the diffusion front, similar to those obtained for Si and Sn diffusion at SiO2-encapsulated GaAs. A saturated-surface concentration of 2 × 1019 atoms∙cm−3 was observed for anneals above 750 °C, likely the solid solubility of Ge
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Kuo, Wei-Cheng, Hung-Chi Hsieh, Wu Chih-Hung, Huang Wen-Hsiang, Chien-Chieh Lee, and Jenq-Yang Chang. "High Quality GaAs Epilayers Grown on Si Substrate Using 100 nm Ge Buffer Layer." International Journal of Photoenergy 2016 (2016): 1–5. http://dx.doi.org/10.1155/2016/7218310.

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We present high quality GaAs epilayers that grow on virtual substrate with 100 nm Ge buffer layers. The thin Ge buffer layers were modulated by hydrogen flow rate from 60 to 90 sccm to improve crystal quality by electron cyclotron resonance chemical vapor deposition (ECR-CVD) at low growth temperature (180°C). The GaAs and Ge epilayers quality was verified by X-ray diffraction (XRD) and spectroscopy ellipsometry (SE). The full width at half maximum (FWHM) of the Ge and GaAs epilayers in XRD is 406 arcsec and 220 arcsec, respectively. In addition, the GaAs/Ge/Si interface is observed by transmi
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Dalapati, Goutam Kumar, Avishek Kumar, Andrew See Weng Wong, et al. "Sputter-Deposited ZrO2 Gate Dielectric on High Mobility Epitaxial-GaAs/Ge Channel Material for Advanced CMOS Applications." Key Engineering Materials 443 (June 2010): 504–9. http://dx.doi.org/10.4028/www.scientific.net/kem.443.504.

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Sputtered-deposited ZrO2 gate dielectric on epitaxial-GaAs/Ge substrates have been studied for complementary-metal-oxide-semiconductor (CMOS) applications. The epitaxial-GaAs (epi-GaAs) on Ge susbstrates with AlGaAs interlayer was grown by metal-organic chemical vapor deposition at 650oC. High resolution transmission electron microscopy ((HRTEM) shows that the epilayers are free from arsenic anti-phase defects (APD). From secondary ion mass spectrometry, it was confirmed that the Ge diffusion is completely blocked by the AlGaAs layer and no Ge atoms are able to penetrate into the GaAs layer. T
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GASPARYAN, FERDINAND, and SVETLANA VITUSEVICH. "MILLIMETER WAVE DETECTORS DEVELOPED ON THE BASIS OF DOPED SEMICONDUCTORS." Modern Physics Letters B 28, no. 01 (2013): 1450001. http://dx.doi.org/10.1142/s0217984914500018.

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Semiconductor p-i-n structure with long i-base region doped with shallow donors/acceptors can be successfully used and have significant advantages in millimeter wave range as cooling THz receivers. It is shown that such detectors working in double current injection mode can have high current photosensitivity and detectivity, linear dependencies of sensitivity versus wavelength and applied voltage. Simulation results can be successfully used for detectors fabricated on the basis of several semiconductors: Si : Li , Si : O , Ge : B , Ge : Al , Ge : Ti , Ge : Be , Ge : P , Ge : As , Ge : Sb , GaA
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Aboelfotoh, M. O., S. Oktyabrsky, J. Narayan, and J. M. Woodall. "Electrical and microstructural characteristics of Ge/Cu ohmic contacts to n-type GaAs." Journal of Materials Research 12, no. 9 (1997): 2325–31. http://dx.doi.org/10.1557/jmr.1997.0308.

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It is shown that Cu–Ge alloys prepared by depositing sequentially Cu and Ge layers onto GaAs substrates at room temperature followed by annealing at 400 °C form a low-resistance ohmic contact to n-type GaAs over a wide range of Ge concentration that extends from 15 to 40 at. %. The contacts exhibit a specific contact resistivity of 7 × 10−7 Ω cm2 on n-type GaAs with doping concentrations of 1 × 1017 cm−3. The contact resistivity is unaffected by varying the Ge concentration in the range studied and is not influenced by the deposition sequence of the Cu and Ge layers. Cross-sectional high-resol
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Wangila, Emmanuel, Calbi Gunder, Petro M. Lytvyn, et al. "The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire." Crystals 14, no. 5 (2024): 414. http://dx.doi.org/10.3390/cryst14050414.

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Ge1−xSnx growth on a new sapphire platform has been demonstrated. This involved the growth of GeSn on Ge/GaAs layers using the algorithm developed. The resultant growths of Ge on GaAs/AlAs/sapphire and Ge1−xSnx on Ge/GaAs/AlAs/sapphire were investigated by in situ and ex situ characterization techniques to ascertain the surface morphology, crystal structure, and quality. The growth mode of Ge on GaAs was predominantly two-dimensional (2D), which signifies a layer-by-layer deposition, contributing to enhanced crystal quality in the Ge/GaAs system. The growth of Ge1−xSnx with 10% Sn on a graded
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Moore, W. T., R. L. S. Devine, P. Maigné, et al. "The growth of gallium arsenide on Si(100) by molecular-beam epitaxy." Canadian Journal of Physics 65, no. 8 (1987): 904–8. http://dx.doi.org/10.1139/p87-141.

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The growth of GaAs on Si(100) directly and with Ge buffer layers has been carried out sequentially under ultra high vacuum conditions in a double-ended III–V and group IV molecular beam epitaxy system. These heterostructures were examined by cross-section transverse emission microscopy, Rutherford backscattering, X-ray diffraction, and photoluminescence spectroscopy.Dislocation densities were observed to be high [Formula: see text] near both the GaAs–Si and the Ge–Si interfaces and to decrease to ~5 × 108 cm−2 a few micrometres from these interfaces. No dislocations were observed to originate
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Strite, S., D. Biswas, N. S. Kumar, M. Fradkin, and H. Morkoç. "Antiphase domain free growth of GaAs on Ge in GaAs/Ge/GaAs heterostructures." Applied Physics Letters 56, no. 3 (1990): 244–46. http://dx.doi.org/10.1063/1.102818.

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Dissertations / Theses on the topic "Ge/GaAs"

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Hardingham, Christopher Mark. "GaAs and GaAs/Ge solar cells : a device and materials study using SEM-EBIC." Thesis, Imperial College London, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.267028.

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North, Stephen Michael. "Electronic structure of GaSb/GaAs and Si/Ge quantum dots." Thesis, University of Newcastle Upon Tyne, 2001. http://hdl.handle.net/10443/551.

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There are significant differences between experiment and theoretical calculations of the electronic structure of GaSb/GaAs self-assembled quantum dots. Using a multi-band effective mass approximation it is shown that the influence of size and geometry of quantum dots has little or no effect in determining the hydrostatic strain. Furthermore, the valenceband ground state energies of the quantum dots studied are surprisingly consistent. This apparent paradox attributed to the influence of biaxial strain in shaping the heavy-hole and light-hole potentials. Consequently, it is shown that a simple,
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LEE, MAN GEUN. "Cellule tandem gaas-ge par depot epitaxial en phase vapeur." Nice, 1993. http://www.theses.fr/1993NICE4631.

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Parmi les tandems photovoltaiques solaires monolithiques a deux terminaux possibles, le tandem gaas-ge est interessant du point de vue de son rendement potentiel, mais aussi du point de vue des problemes de croissance qu'il pose. Il s'agit principalement de diminuer la diffusion d'as et de ga vers ge. Pour cela nous avons propose de tirer parti du fait que ge peut etre epitaxie a plus basse temperature que gaas. Un banc d'epitaxie en phase vapeur a ete construit avec, comme precurseurs, geh4 pour ge, ash3 (11 ppm dans he) pour le dopage n, b2h6 (50 ppm dans he) pour le dopage p. Le reacteur ve
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Ma, Penghui. "The growth of ultrathin ferromagnetic structures on Ge(100) and sulphur passivated Ge(100) and GaAs(100) surfaces." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk2/tape15/PQDD_0014/NQ32319.pdf.

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Radulescu, Fabian. "Pd-Ge ohmic contact on to GaAs formed by the solid phase epitaxy of Ge : a microstructure study /." Full text open access at:, 2000. http://content.ohsu.edu/u?/etd,226.

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Kholevchuk, V. V., V. P. Kladko, A. V. Kuchuk, P. M. Lytvyn, L. A. Matveeva, and V. F. Mitin. "Study of Structure and Intrinsic Stresses of Ge Thin Films on GaAs." Thesis, Sumy State University, 2013. http://essuir.sumdu.edu.ua/handle/123456789/35310.

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The effect of film growth rate on the structure and intrinsic stresses of thin (100 nm) Ge films grown on GaAs(100) substrates was investigate by High Resolution X-Ray Diffraction (HRXRD). The Ge films were deposited onto GaAs using thermal evaporation of Ge in the vacuum. It was shown that pseudomor-phic films with good structural quality can be obtained by this growth technique. We found out that the films have biaxial deformations due to coherent interface and Poisson ratio. The films are elastically com-pressed in the interface and stretched in the perpendicular [001] direction. The intrin
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Bélanger, Simon. "Croissance épitaxiale de GaAs sur substrats de Ge par épitaxie par faisceaux chimiques." Mémoire, Université de Sherbrooke, 2010. http://savoirs.usherbrooke.ca/handle/11143/1561.

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La situation énergétique et les enjeux environnementaux auxquels la société est confrontée entraînent un intérêt grandissant pour la production d'électricité à partir de l'énergie solaire. Parmi les technologies actuellement disponibles, la filière du photovoltaïque à concentrateur solaire (CPV pour concentrator photovoltaics) possède un rendement supérieur et un potentiel intéressant à condition que ses coûts de production soient compétitifs.La méthode d'épitaxie par faisceaux chimiques (CBE pour chemical beam epitaxy) possède plusieurs caractéristiques qui la rendent intéressante pour la pro
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Mitin, V. F., P. M. Lytvyn, V. V. Kholevchuk, et al. "Ge/GaAs(100) Thin Films: Large Effect of Film Growth Rate and Thicknesses on Surface Morphology, Intrinsic Stresses and Electrical Properties." Thesis, Sumy State University, 2012. http://essuir.sumdu.edu.ua/handle/123456789/35066.

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We found out and studied a profound effect of film growth rate on the electrical properties, intrinsic stresses and surface morphology of thin Ge films grown on GaAs(100). This effect is essential and has to be accounted for when developing and producing devices based on the Ge/GaAs heterostructure. All the Ge films under investigation were single-crystalline and epitaxially-grown on the GaAs(100) substrates. However, the transport phenomena in Ge films grown at low and high deposition rate differed drastically. Those obtained at low deposition rate were p-type and high resistant. They ha
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Lin, Liang. "Modelling of high-K gate oxides on GaAs and Ge based high mobility MOSFETs." Thesis, University of Cambridge, 2011. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.609643.

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GUITA, SADREDDINE. "Etude des distributions electroniques des semiconducteurs amorphes et cristallises gaas et ge#1##*se#*." Paris 6, 1989. http://www.theses.fr/1989PA066220.

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Nos resultats experimentaux ont ete obtenus par spectroscopie de photoabsorption x ce qui a permis d'analyser les distributions electroniques inoccupees a caracteres de ga, as, ge et se dans les alliages amorphes gaas et ge#1##xse#x. Dans le semiconducteur gaas amorphe ou cristallise, nous avons montre que les etats de bord de bande de conduction sont des etats du gallium. Ces etats sont a caractere hybride sp. L'hybridation est moins forte dans a-gaas que dans le compose cristallise par suite d'une delocalisation des etats electroniques autour de ga dans l'amorphe. Nous avons montre que le de
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Books on the topic "Ge/GaAs"

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A, Scheiman David, Brinker David J, and Lewis Research Center, eds. GaAs/Ge solar powered aircraft. National Aeronautics and Space Administration, Lewis Research Center, 1998.

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A, Scheiman David, Brinker David J, and Lewis Research Center, eds. GaAs/Ge solar powered aircraft. National Aeronautics and Space Administration, Lewis Research Center, 1998.

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Dargys, A. Handbook on physical properties of Ge, Si, GaAs and InP. Science and Encyclopedia Publishers, 1994.

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A, Scheiman David, and United States. National Aeronautics and Space Administration., eds. Design of a GaAs/Ge solar array for unmanned aerial vehicles. National Aeronautics and Space Administration, 1995.

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Levinshtein, M., and Natalya M. Schmidt. Handbook Series on Semiconductor Parameters Vol. 1: Si, GE, C , GAAS, Gap, Gasb, Inas, Inp, Insb. World Scientific Publishing Co Pte Ltd, 1996.

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Pelleg, Joshua. Mechanical Properties of Semiconductors : Elemental Semiconductors : Si, Ge; Binary Semiconductors : SiC, Gaas, GaP, InP; Ternary Semiconductors: AlGaAs, GaAsP, ZnCdTe. Springer International Publishing AG, 2023.

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Book chapters on the topic "Ge/GaAs"

1

Bauer, R. S., and J. C. McMenamin. "Ge—GaAs(110) interface formation." In Electronic Structure of Semiconductor Heterojunctions. Springer Netherlands, 1988. http://dx.doi.org/10.1007/978-94-009-3073-5_10.

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Anderson, R. L. "Experiments on Ge-GaAs Heterojunctions." In Electronic Structure of Semiconductor Heterojunctions. Springer Netherlands, 1988. http://dx.doi.org/10.1007/978-94-009-3073-5_2.

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Houghton, D. C., J. M. Baribeau, T. E. Jackman, et al. "Ge, GaAs and InSb Heteroepitaxy on (100) Si." In Heterostructures on Silicon: One Step Further with Silicon. Springer Netherlands, 1989. http://dx.doi.org/10.1007/978-94-009-0913-7_10.

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Mitin, V. F. "Miniature Resistance Thermometers Based on Ge Films on GaAs." In Advances in Cryogenic Engineering. Springer US, 1998. http://dx.doi.org/10.1007/978-1-4757-9047-4_93.

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Kumar, Akshaya, Dip Prakash Samajdar, and V. Sachchidanand. "Optical and Electrical Simulation of Single GaAs Nanowire/Ge Solar Cells." In Lecture Notes in Electrical Engineering. Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-5089-8_45.

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Grant, R. W., J. R. Waldrop, and E. A. Kraut. "Observation of the Orientation Dependence of Interface Dipole Energies in Ge-GaAs." In Electronic Structure of Semiconductor Heterojunctions. Springer Netherlands, 1988. http://dx.doi.org/10.1007/978-94-009-3073-5_11.

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Perfetti, P., D. Denley, K. A. Mills, and D. A. Shirley. "Angle-resolved photoemission measurements of band discontinuities in the GaAs-Ge heterojunction." In Electronic Structure of Semiconductor Heterojunctions. Springer Netherlands, 1988. http://dx.doi.org/10.1007/978-94-009-3073-5_9.

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Nielsen, O. H., and Richard M. Martin. "Ab-initio calculations of the elastic properties of Si, Ge, and GaAs." In Proceedings of the 17th International Conference on the Physics of Semiconductors. Springer New York, 1985. http://dx.doi.org/10.1007/978-1-4615-7682-2_262.

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Rudolph, Peter, Matthias Czupalla, Christiane Frank-Rotsch, Frank-Michael Kiessling, and Bernd Lux. "The Growth of Semiconductor Crystals (Ge, GaAs) by the Combined Heater Magnet Technology." In Crystal Growth Technology. Wiley-VCH Verlag GmbH & Co. KGaA, 2010. http://dx.doi.org/10.1002/9783527632879.ch6.

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Sleiman, Adam, and Mahieddine Emziane. "P/N/P Double-Junction GaAs/Ge Solar Cell Devices for PV and CPV." In Sustainability in Energy and Buildings. Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-27509-8_53.

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Conference papers on the topic "Ge/GaAs"

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Harrison, Jamie, Phoebe Pearce, and Nicholas J. Ekins-Daukes. "Optimized Bragg Reflectors for GaAs Subcell in InGaP/GaAs/Ge Triple-Junctions." In 2024 IEEE 52nd Photovoltaic Specialist Conference (PVSC). IEEE, 2024. http://dx.doi.org/10.1109/pvsc57443.2024.10749046.

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Matteo, Daniel, Sergei Tochitsky, and Chan Joshi. "Nonresonant Nonlinear Optics of Semiconductors Pumped with Ultrafast Long-wave Infrared Laser Pulses." In CLEO: Applications and Technology. Optica Publishing Group, 2024. http://dx.doi.org/10.1364/cleo_at.2024.jw2a.9.

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The nonlinear refractive index and nonlinear absorption are measured in GaAs, n-Ge, ZnSe, and Te at 10µm with intensities up to 10GW/cm2 using various methods. Mid-IR femtosecond semiconductor switching is also studied in these materials.
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Patel, R. M., S. W. Gersten, D. R. Perrachione, Y. C. M. Yeh, D. K. Wagner, and R. K. Morris. "Lightweight GaAs/Ge solar cells." In Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference. IEEE, 1988. http://dx.doi.org/10.1109/pvsc.1988.105774.

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Kimura, T., C. Yamagishi, T. Ueda, and M. Akiyama. "The Growth of GaAs on Recrystallized Ge/SiO2/GaAs." In 1987 Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1987. http://dx.doi.org/10.7567/ssdm.1987.b-6-3.

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Colozza, Anthony J., David A. Scheiman, and David J. Brinker. "GaAs/Ge Solar Powered Aircraft, 1998." In Aerospace Power Systems Conference. SAE International, 1998. http://dx.doi.org/10.4271/981260.

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Garner, J. "The Clementine GaAs/Ge solar array." In Intersociety Energy Conversion Engineering Conference. American Institute of Aeronautics and Astronautics, 1994. http://dx.doi.org/10.2514/6.1994-4240.

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Colozza, Anthony J., David A. Scheiman, and David J. Brinker. "GaAs/Ge Solar Powered Aircraft, 1999." In Aerospace Power Systems Conference. SAE International, 1999. http://dx.doi.org/10.4271/1999-01-1372.

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Wilt, David, Mark Smith, William Maurer, David Scheiman, and Phillip Jenkins. "GaAs Photovoltaics on Polycrystalline Ge Substrates." In 2006 IEEE 4th World Conference on Photovoltaic Energy Conference. IEEE, 2006. http://dx.doi.org/10.1109/wcpec.2006.279865.

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Al Wahshi, Noura, and Ammar Nayfeh. "Single junction GaAs - Ge stacked tandem cell." In 2014 IEEE 40th Photovoltaic Specialists Conference (PVSC). IEEE, 2014. http://dx.doi.org/10.1109/pvsc.2014.6924917.

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Chia, Ching-Kean, Aneesa Iskander, Yuanbing Cheng, Jin Yunjiang, Goutam Kumar Dalapati, and Terry Zhuo Qiuwei. "Ge and GaAs integration for device applications." In 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM). IEEE, 2014. http://dx.doi.org/10.1109/istdm.2014.6874693.

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Reports on the topic "Ge/GaAs"

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Markunas, R. J., and G. G. Fountain. Development of a Ge/GaAs HMT Technology Based on Plasma Enhanced Chemical Vapor Deposition. Defense Technical Information Center, 1992. http://dx.doi.org/10.21236/ada246991.

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Venkatasubramanian, R. Inverted AlGaAs/GaAs Patterned-Ge Tunnel Junction Cascade Concentrator Solar Cell: Final Subcontract Report, 1 January 1991 - 31 August 1992. Office of Scientific and Technical Information (OSTI), 1993. http://dx.doi.org/10.2172/6744462.

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Venkatasubramanian, R. An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell. Final subcontract report, 1 January 1991--31 August 1992. Office of Scientific and Technical Information (OSTI), 1993. http://dx.doi.org/10.2172/10129182.

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AlGaAs-GaAs patterned Ge tunnel junction cascade concentrator solar cell. Annual subcontract report, 15 October 1984-14 October 1985. Office of Scientific and Technical Information (OSTI), 1986. http://dx.doi.org/10.2172/5749855.

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AlGaAs-GaAs patterned Ge tunnel junction cascade concentrator solar cell. Annual technical progress report, 15 October 1983-14 December 1984. Office of Scientific and Technical Information (OSTI), 1985. http://dx.doi.org/10.2172/5051200.

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