Relevant bibliographies by topics / III-V technology

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'III-V technology'

Author: Grafiati
Published: 15 June 2024
Last updated: 31 July 2025

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'III-V technology.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Journal articles on the topic "III-V technology"

1

Lile, D. L. "Advanced III–V semiconductor materials technology assessment." Thin Solid Films 141, no. 2 (1986): L93—L94. http://dx.doi.org/10.1016/0040-6090(86)90363-9.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

PEARTON, S. J. "ION IMPLANTATION IN III–V SEMICONDUCTOR TECHNOLOGY." International Journal of Modern Physics B 07, no. 28 (1993): 4687–761. http://dx.doi.org/10.1142/s0217979293003814.

Full text
Abstract:
A review is given of the applications of ion implantation in III–V compound semiconductor device technology, beginning with the fundamentals of ion stopping in these materials and describing the use of implantation for both doping and isolation. There is increasing interest in the use of MeV implantation to create unique doping profiles or for the isolation of thick device structures such as heterojunction bipolar transistors or multi quantum well lasers, and we give details of these areas and the metal masking layers necessary for selective area processing. Finally, examples are given of the
APA, Harvard, Vancouver, ISO, and other styles
3

Zhang, John H., Stan Tsai, Charan Surisetty, et al. "CMP Challenges for Advanced Technology Nodes beyond Si." MRS Advances 2, no. 51 (2017): 2891–902. http://dx.doi.org/10.1557/adv.2017.339.

Full text
Abstract:
ABSTRACTAs the scaling of the device dimensions in CMOS devices runs into physical limitations, new materials beyond Si with high electron and hole mobilities such as Ge, SiGe, and III-V materials are introduced. Challenges of CMP for these materials are reviewed in this paper. First we discussed the challenge of the new integration schemes to CMP. Loading effects can result in different growth rates for varying feature sizes, which results in a critical dimension dependent overburden. This makes it more difficult to meet the targets of the CMP process with respect to oxide loss and Ge/SiGe/II
APA, Harvard, Vancouver, ISO, and other styles
4

Liliental-Weber, Z., M. Li, G. S. Li, C. Chang-Hasnain, and E. R. Weber. "Structure of III-V oxides." Proceedings, annual meeting, Electron Microscopy Society of America 54 (August 11, 1996): 942–43. http://dx.doi.org/10.1017/s0424820100167172.

Full text
Abstract:
The lack of high-quality native oxides on the III-V compounds has hindered the development of III-V integrated circuits and optoelectronic technology. Recently it was shown that stable oxides can be formed in the III-V compounds rich in Al, such as AlxGa1-x As similarly as it was done in Si technology by the reaction of AlxGa1-x As with H2O vapor (in N2 carrier gas) at elevated temperatures (∼400−450°C). The high quality of these oxides was attributed to the formation of stable AlO(OH) and Al2O3 compounds. However, this conclusion was not definitive, since several Al rich compounds were propos
APA, Harvard, Vancouver, ISO, and other styles
5

Huber, A. M., and C. Grattepain. "Crystal Defect Study in III-V Compound Technology." Materials Science Forum 38-41 (January 1991): 1345–50. http://dx.doi.org/10.4028/www.scientific.net/msf.38-41.1345.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Beneking, Heinz. "III–V Technology: The Key for Advanced Devices." Journal of The Electrochemical Society 136, no. 9 (1989): 2680–86. http://dx.doi.org/10.1149/1.2097549.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Hasegawa, Hideki, and Masamichi Akazawa. "Surface passivation technology for III–V semiconductor nanoelectronics." Applied Surface Science 255, no. 3 (2008): 628–32. http://dx.doi.org/10.1016/j.apsusc.2008.07.002.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Thakur, R. P. S., R. Singh, A. J. Nelson, and A. B. Swartzlander. "Role ofinsiturapid isothermal processing in advanced III‐V technology." Journal of Applied Physics 70, no. 7 (1991): 3857–61. http://dx.doi.org/10.1063/1.349191.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Pearton, S. J., F. Ren, S. N. G. Chu, et al. "Applications of ion implantation in III–V device technology." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 79, no. 1-4 (1993): 648–50. http://dx.doi.org/10.1016/0168-583x(93)95434-7.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Dutta, P. S. "III–V Ternary bulk substrate growth technology: a review." Journal of Crystal Growth 275, no. 1-2 (2005): 106–12. http://dx.doi.org/10.1016/j.jcrysgro.2004.10.073.

Full text
APA, Harvard, Vancouver, ISO, and other styles
More sources

Dissertations / Theses on the topic "III-V technology"

1

Moran, David A. J. "Self-aligned short gate length III-V HEMT technology." Thesis, University of Glasgow, 2004. http://theses.gla.ac.uk/6577/.

Full text
Abstract:
This thesis presents a ne- approach to the fabrication of short gate length HI-V High Electron Mobility Transistors (HEMTs) that reduces the impact of external parasitic elements, and in particular access resistances, upon device performance. This was approached through the development of a self-aligned T-gate process with non-annealed ohmic contacts. The process was used to fabricate both GaAs pseudomorphic HEMT and subsequently lattice matched InP devices. In addition, a new selective recess etch was developed for cap layers containing indium. Characterisation of the self-aligned GaAs pHEMT
APA, Harvard, Vancouver, ISO, and other styles
2

Green, Richard Philip. "Physics and technology of Intersubband transitions in III-V semiconductor heterostructures." Thesis, University of Sheffield, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.419619.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Pacella, Nan Yang. "Platform for monolithic integration of III-V devices with Si CMOS technology." Thesis, Massachusetts Institute of Technology, 2012. http://hdl.handle.net/1721.1/76119.

Full text
Abstract:
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2012.<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references (p. 169-165).<br>Monolithic integration of III-V compound semiconductors and Si complementary metal-oxide- semiconductor (CMOS) enables the creation of advanced circuits with new functionalities. In order to merge the two technologies, compatible substrate platforms and processing approaches must be developed. The Silicon on Lattice Engineered Silicon (SOLES) substrate allows monolithic integration. It is a Si
APA, Harvard, Vancouver, ISO, and other styles
4

Dohrman, Carl Lawrence. "Substrate engineering for monolithic integration of III-V semiconductors with Si CMOS technology." Thesis, Massachusetts Institute of Technology, 2008. http://hdl.handle.net/1721.1/44323.

Full text
Abstract:
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2008.<br>Includes bibliographical references (p. 165-172).<br>Ge virtual substrates, fabricated using Si1-xGex-.Ge, compositionally graded buffers, enable the epitaxial growth of device-quality GaAs on Si substrates, but monolithic integration of III-V semiconductors with Si CMOS using this platform is hampered by the large thickness of the Si1-xGex graded region. To address this issue, the Silicon on Lattice-engineered Silicon (SOLES) was developed, consisting of a silicon-on-insulator (SOI) st
APA, Harvard, Vancouver, ISO, and other styles
5

Perkins, James Michael 1978. "Magnetically assisted statistical assembly of III-V heterostructures on silicon : initial process and technology development." Thesis, Massachusetts Institute of Technology, 2002. http://hdl.handle.net/1721.1/32712.

Full text
Abstract:
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2002.<br>Includes bibliographical references (leaf 75).<br>This work is the initial investigation of magnetically assisted statistical assembly (MASA), a novel silicon I-v integration technique developed at M.I.T. Initially procedures for processing optoelectronic devices into magnetically sensitive 40 micron discs were performed and refined. Cobalt palladium thin films were obtained and their magnetic properties were studied. An initial procedure was developed to easily integrate these
APA, Harvard, Vancouver, ISO, and other styles
6

Medjoubi, Karim. "Investigation of new solar cell technology III-V//Si behavior under irradiations for space applications." Thesis, Institut polytechnique de Paris, 2021. http://www.theses.fr/2021IPPAX004.

Full text
Abstract:
Ce travail s’intéresse au comportement en environnement spatial d’une nouvelle technologie de cellules solaires photovoltaïque : les tandems III-V//Si (2- et 3-jonctions), obtenues par collage direct. Ces cellules ont été exposé à des irradiations électrons et protons et testé dans deux type d’environnement : a) irradiance normale, 1 soleil, et température ambiante 300K, condition NIRT (orbites terrestres) et b) basse irradiance, 0,03 soleil, et basse température 120K, condition LILT (espace lointain). Dans une étape préliminaire une étude comparative a été mené sur 2 simulateurs solaires, équ
APA, Harvard, Vancouver, ISO, and other styles
7

Wu, Xiaoyue. "Simulation Study of Epitaxially Regrown Vertical-Cavity Surface-Emitting Lasers." Thesis, KTH, Skolan för informations- och kommunikationsteknik (ICT), 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-52896.

Full text
Abstract:
The vertical-cavity surface-emitting laser or VCSEL is a special type of diode laser, which has established itself in optoelectronic applications asa low-cost, high-quality miniaturized light source. The development of VCSELs can be largely promoted with support from computer simulations. In this study, we have used such simulations, on one hand to understand and improve the VCSEL performance, and on the other hand to prepare for analyzing new device concepts such as transistor-VCSELs. This thesis starts with a background introduction to the principle idea of VCSELs and then states the signifi
APA, Harvard, Vancouver, ISO, and other styles
8

Bouillaud, Hugo. "Fabrication et optimisation des caractéristiques thermiques de diodes Schottky de la filière GaAs et reportées sur SiHR pour des applications de multiplication de fréquences." Electronic Thesis or Diss., Université de Lille (2022-....), 2023. http://www.theses.fr/2023ULILN043.

Full text
Abstract:
Les besoins exponentiels liés aux applications exploitant le domaine THz nécessitent d'accroitre l'éventail des sources disponibles et d'optimiser leur fabrication. Dans ce travail de thèse, nous nous sommes intéressés aux diodes schottky en vue de la réalisation de multiplicateurs de fréquences. Notre travail de recherche expérimental a consisté en l'optimisation des caractéristiques de diodes schottky de filière GaAs, par le développement et la mise en œuvre d'un procédé de fabrication innovant. Dans un premier temps, nous avons réalisé des diodes schottky GaAs sur substrat GaAs de différent
APA, Harvard, Vancouver, ISO, and other styles
9

Lindberg, Martin. "Mode Matching Analysis of One-Dimensional Periodic Structures." Thesis, KTH, Elektroteknisk teori och konstruktion, 2018. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-231842.

Full text
Abstract:
In this thesis, we analyze the electromagnetic wave propagation in waveguidestructuresexhibiting periodical geometry, including glide symmetry. The analysisis performed using a mode matching technique which correlates the different modecoefficients from separate but, connected regions in the structure. This technique isused to obtain the dispersion diagrams for two one-dimensional periodic structures:a glide-symmetric corrugated metasurface and a coaxial line loaded with periodicholes. The mode matching formulation is presented in Cartesian and cylindricalcoordinate system for the former and t
APA, Harvard, Vancouver, ISO, and other styles
10

Fawaz, Hussein. "Technologie multifonction de transistors à effet de champ sur matériaux III-V pour logique rapide et hyperfréquences." Lille 1, 1993. http://www.theses.fr/1993LIL10038.

Full text
APA, Harvard, Vancouver, ISO, and other styles
More sources

Books on the topic "III-V technology"

1

Ayşe, Erol, ed. Dilute III-V nitride semiconductors and material systems: Physics and technology. Springer, 2008.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
2

Erol, Ayşe. Dilute III-V nitride semiconductors and material systems: Physics and technology. Springer, 2008.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
3

Ayşe, Erol, ed. Dilute III-V nitride semiconductors and material systems: Physics and technology. Springer, 2008.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
4

Conference on Semi-insulating III-V Materials (5th 1988 Malmö, Sweden). Semi-insulating III-V materials: Malmö, 1988 : proceedings of the 5th Conference on Semi-insulating III-V Materials held in Malmö, Sweden, 1-3 June 1988. A. Hilger, 1988.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
5

Ekaterinburg, Russia) Mezhdunarodnyĭ nauchno-prakticheskiĭ seminar "Intellektualʹnye informat︠s︡ionnye tekhnologii v. upravlencheskoĭ dei︠a︡telʹnosti" (3rd 2001. Intellektualʹnye informat︠s︡ionnye tekhnologii v upravlencheskoĭ dei︠a︡telʹnosti: III Mezhdunarodnyĭ nauchno-prakticheskiĭ seminar, 23-24 i︠a︡nvari︠a︡ 2001 g. : materialy. Uralʹskiĭ gos. tekhn. universitet, 2001.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
6

Mezhdunarodnai︠a︡, nauchnai︠a︡ konferent︠s︡ii︠a︡ "Chelovek kulʹtura i. obshchestvo v. kontekste globalizat︠s︡ii sovremennogo mira" (3rd 2004 Moscow Russia). Chelovek, kulʹtura i obshchestvo v kontekste globalizat︠s︡ii sovremennogo mira: Ėlektronnai︠a︡ kulʹtura i novye gumanitarnye tekhnologii XXI veka : materialy III Mezhdunarodnoĭ nauchnoĭ konferent︠s︡ii. Izd-vo "Nezavisimyĭ in-t grazhdanskogo ob-va", 2004.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
7

Soldatkina, I͡A V., and Elena I͡Urʹevna Lazareva. Mediĭnye prot︠s︡essy v sovremennom gumanitarnom prostranstve: Podkhody k izuchenii︠u︡, ėvoli︠u︡t︠s︡ii︠a︡, perspektivy : materialy III nauchno-prakticheskoĭ konferent︠s︡ii. MPGU, 2017.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
8

Belarus) Mezhdunarodnai︠a︡ konferent︠s︡ii︠a︡ "Informat︠s︡ionnye sistemy i tekhnologii" (3nd 2006 Minsk. Informat︠s︡ionnye sistemy i tekhnologii (IST'2006): Tretʹi︠a︡ Mezhdunarodnai︠a︡ konferent︠s︡ii︠a︡ (Minsk, 1--3 noi︠a︡bri︠a︡ 2006 g.) : materialy : v 2 chasti︠a︡kh = Information systems and technologies (IST'2006) : proceedings of the III International conference (Minsk, November 1--3, 2006) In two parts. Akademii︠a︡ upravlenii︠a︡ pri Prezidente Respubliki Belarusʹ, 2006.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
9

United States. National Aeronautics and Space Administration., ed. Growth and characterization of binary and pseudo-binary III-V compounds exhibiting non-linear optical behavior and undergraduate research opportunities in microgravity science and technology. National Aeronautics and Space Administration, 1992.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
10

Conference on Physics and Technology of GaAs and other III-V Semiconductors (2nd 1986 Budapest, Hungary). Gallium arsenide: Proceedings of the Second Conference on Physics and Technology of GaAs and other III-V Semiconductors, held in Budapest, Hungary, September 8-11, 1986. Edited by Lendvay E and Magyar Tudományos Akadémia. Trans Tech Publications, 1987.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
More sources

Book chapters on the topic "III-V technology"

1

Harris, J. J. "III–V Microwave Devices." In The Technology and Physics of Molecular Beam Epitaxy. Springer US, 1985. http://dx.doi.org/10.1007/978-1-4899-5364-3_14.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Iga, Kenichi, and Susumu Kinoshita. "Epitaxy of III–V Compound Semiconductors." In Process Technology for Semiconductor Lasers. Springer Berlin Heidelberg, 1996. http://dx.doi.org/10.1007/978-3-642-79576-3_4.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Davies, Graham J., and David Williams. "III–V MBE Growth Systems." In The Technology and Physics of Molecular Beam Epitaxy. Springer US, 1985. http://dx.doi.org/10.1007/978-1-4899-5364-3_2.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Ilegems, M. "Properties of III–V Layers." In The Technology and Physics of Molecular Beam Epitaxy. Springer US, 1985. http://dx.doi.org/10.1007/978-1-4899-5364-3_5.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Woodall, Jerry M. "Non-Silicon MOSFET Technology: A Long Time Coming." In Fundamentals of III-V Semiconductor MOSFETs. Springer US, 2010. http://dx.doi.org/10.1007/978-1-4419-1547-4_1.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Kulkarni, Jaydeep P., and Kaushik Roy. "Technology/Circuit Co-Design for III-V FETs." In Fundamentals of III-V Semiconductor MOSFETs. Springer US, 2010. http://dx.doi.org/10.1007/978-1-4419-1547-4_14.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Moerman, I., and P. Demeester. "Advanced Epitaxial Techniques for III-V Materials." In Science and Technology of Crystal Growth. Springer Netherlands, 1995. http://dx.doi.org/10.1007/978-94-011-0137-0_11.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Yip, Sen Po, Lifan Shen, Edwin Y. B. Pun, and Johnny C. Ho. "Properties Engineering of III–V Nanowires for Electronic Application." In Nanostructure Science and Technology. Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-13-2367-6_3.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Ilegems, M. "III–V Compound Semiconductor Epitaxy for Optoelectronic Integration." In Optoelectronic Integration: Physics, Technology and Applications. Springer US, 1994. http://dx.doi.org/10.1007/978-1-4615-2686-5_3.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Singh, R. B., R. S. Paroda, and Malavika Dadlani. "Science, Technology and Innovation." In India Studies in Business and Economics. Springer Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-0763-0_8.

Full text
Abstract:
AbstractScience, technology and innovation (STI), targeted to solve both generic and location-specific challenges, are key drivers for transforming agri-food systems. These can transform the sustenance and low return livelihood to a profitable and respectable occupation for smallholder farmers, while motivating, attracting and empowering youth and women in agriculture. A paradigm shift is needed to: i) increase productivity, profitability, inclusiveness and efficiency of human engagement, ii) achieve complete nutrition security, iii) address the challenges of climate change, iv) adopt environm
APA, Harvard, Vancouver, ISO, and other styles

Conference papers on the topic "III-V technology"

1

Sowers, Jim. "III-V Semiconductors in Commercial Communication Satellite Payloads." In 2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS). IEEE, 2024. http://dx.doi.org/10.1109/bcicts59662.2024.10745716.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Choupan, Negar, Valeria Vadalà, Gianni Bosi, et al. "Characterization Procedure for Effective Evaluation of III-V Compound Semiconductor Technology." In 2025 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC). IEEE, 2025. https://doi.org/10.1109/inmmic64198.2025.10975315.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Lim, Tekfouy, Stefan Kosmider, Kavin Senthil Murugesan, and Andreas Ostmann. "Integration of III-V Components of 5G Transceiver in Embedding PCB-Based Technology." In 2024 IEEE 10th Electronics System-Integration Technology Conference (ESTC). IEEE, 2024. http://dx.doi.org/10.1109/estc60143.2024.10712048.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Passlack, M., R. Droopad, K. Rajagopalan, J. Abrokwah, P. Zurcher, and P. Fejes. "High Mobility III-V Mosfet Technology." In 2006 IEEE Compound Semiconductor Integrated Circuit Symposium. IEEE, 2006. http://dx.doi.org/10.1109/csics.2006.319914.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Grant, Ian R. "Progress in III-V materials technology." In European Symposium on Optics and Photonics for Defence and Security, edited by Anthony W. Vere, James G. Grote, and Francois Kajzar. SPIE, 2004. http://dx.doi.org/10.1117/12.583023.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Passlack, Matthias. "III–V metal-oxide-semiconductor technology." In Related Materials (IPRM). IEEE, 2008. http://dx.doi.org/10.1109/iciprm.2008.4703075.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Chiah, Siau Ben, Xing Zhou, Binit Syamal, Kenneth Eng Kian Lee, Cheng Yeow Ng, and Eugene A. Fitzgerald. "Hybrid III–V/Si-CMOS PDK for Monolithic Heterogeneously-Integrated III–V/Si Technology Platforms." In 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT). IEEE, 2020. http://dx.doi.org/10.1109/icsict49897.2020.9278196.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Fitzgerald, E. A., M. T. Bulsara, Y. Bai, et al. "Monolithic III-V/Si integration." In 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT). IEEE, 2008. http://dx.doi.org/10.1109/icsict.2008.4734819.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Forbes, David V., Seth M. Hubbard, Christopher Bailey, Stephen Polly, John Andersen, and Ryne Raffaelle. "III-V quantum dot enhanced photovoltaic devices." In SPIE Solar Energy + Technology, edited by Loucas Tsakalakos. SPIE, 2010. http://dx.doi.org/10.1117/12.863142.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Yao, Ruizhe, Bowen Zheng, Hyun Kum, et al. "Graphene/III-V Hybrid Diode Optical Modulator." In CLEO: Applications and Technology. OSA, 2018. http://dx.doi.org/10.1364/cleo_at.2018.jtu2a.7.

Full text
APA, Harvard, Vancouver, ISO, and other styles

Reports on the topic "III-V technology"

1

Mora-García, Claudio, and Andy A. Pearson. Enables and Bottlenecks to Upgrading along the Medical Device Global Value Chain in Costa Rica. Inter-American Development Bank, 2025. https://doi.org/10.18235/0013458.

Full text
Abstract:
The medical device sector is a critical driver of Costa Rica's economic development, accounting for 37 percent of total exports as of 2022. This paper analyzes the main enablers and bottlenecks in upgrading along the medical device global value chain into higher value-added segments. The mixed-method approach we use includes documentary analysis, 15 interviews with key stakeholders, and descriptive statistics of different datasets. Results indicate five enablers for upgrading: (i) a strategic location and economic, political, and social stability, education, human talent, and a favorable inves
APA, Harvard, Vancouver, ISO, and other styles
2

Muñoz, Ernesto, Iván Hernández, Francisco González, Nathalie Cely, and Iván Prieto. The Discovery of New Export Products in Ecuador. Inter-American Development Bank, 2010. http://dx.doi.org/10.18235/0010828.

Full text
Abstract:
This paper examines export diversification in Ecuador in the cases of fresh cut flowers, canned tuna, palm heart, broccoli and mangoes, using the theoretical framework on pioneers and discoveries developed by Hausmann and Rodrik (2003), as well as work by Sánchez and Butler (2006) on export costs and related uncertainties. It is found that the discoveries were mainly of traditional competitive advantage, with various degrees of technology adoption. The following policy implications are derived: i) innovative mechanisms to share the costs of new discoveries must be found and intellectual proper
APA, Harvard, Vancouver, ISO, and other styles
3

Aldendifer, Elise, McKenzie Coe, Taylor Faught, et al. The Safe and Efficient Development of Offshore Transboundary Hydrocarbons: Best Practices from the North Sea and Their Application to the Gulf of Mexico. Edited by Gabriel Eckstein. Texas A&M University School of Law Program in Energy, Environmental, & Natural Resource Systems, 2019. http://dx.doi.org/10.37419/eenrs.offshoretransboundaryhydrocarbons.

Full text
Abstract:
Offshore hydrocarbon resources have been developed for many decades, and with technology improvements, many fields which were once impossible to develop, are now economically and technologically feasible. This has led to a growing difficulty in determining the legislative and regulatory framework for resources that straddle the recognized borders between two states. In this paper, we examine a successful framework agreement governing the transboundary resources between the United Kingdom (“U.K.”) and Norway in the North Sea, and the agreement between the United States and Mexico governing the
APA, Harvard, Vancouver, ISO, and other styles
4

Wilson, Thomas E., Avraham A. Levy, and Tzvi Tzfira. Controlling Early Stages of DNA Repair for Gene-targeting Enhancement in Plants. United States Department of Agriculture, 2012. http://dx.doi.org/10.32747/2012.7697124.bard.

Full text
Abstract:
Gene targeting (GT) is a much needed technology as a tool for plant research and for the precise engineering of crop species. Recent advances in this field have shown that the presence of a DNA double-strand break (DSB) in a genomic locus is critical for the integration of an exogenous DNA molecule introduced into this locus. This integration can occur via either non-homologous end joining (NHEJ) into the break or homologous recombination (HR) between the broken genomic DNA and the introduced vector. A bottleneck for DNA integration via HR is the machinery responsible for homology search and s
APA, Harvard, Vancouver, ISO, and other styles
5

Dawson, William O., and Moshe Bar-Joseph. Creating an Ally from an Adversary: Genetic Manipulation of Citrus Tristeza. United States Department of Agriculture, 2004. http://dx.doi.org/10.32747/2004.7586540.bard.

Full text
Abstract:
Citrus is one of the major agricultural crops common to Israel and the United States, important in terms of nutrition, foreign exchange, and employment. The economy of both citrus industries have been chronically plagued by diseases caused by Citrus tristeza virus (CTV). The short term solution until virus-resistant plants can be used is the use of mild strain cross-protection. We are custom designing "ideal" protecting viruses to immunize trees against severe isolates of CTV by purposely inoculating existing endangered trees and new plantings to be propagated as infected (protected) citrus bu
APA, Harvard, Vancouver, ISO, and other styles
6

Tellei, Adeeshia, King Sam, Megan Cook, et al. Omesubel a Nautilus - Ocean Exploration Vocabulary in Palauan Language. Ocean Exploration Trust, 2024. http://dx.doi.org/10.62878/bgj821.

Full text
Abstract:
This learning resource includes a glossary of ocean exploration and technology terms in Palauan language along with their definitions and translations into English. It was developed in support of Lebuu’s Voyage I &amp; II — the 2024 deep ocean exploration expeditions aboard E/V Nauutilus led by Ocean Exploration Trust, Palau International Coral Reef Center, and NOAA Ocean Exploration in the Palau National Marine Sanctuary. Its contents are certified by the Palau Language Commission. The Lebuu’s Voyage expeditions were funded by NOAA Ocean Exploration via the Ocean Exploration Cooperative Insti
APA, Harvard, Vancouver, ISO, and other styles
7

Kira, Beatriz, Rutendo Tavengerwei, and Valary Mumbo. Points à examiner à l'approche des négociations de Phase II de la ZLECAf: enjeux de la politique commerciale numérique dans quatre pays d'Afrique subsaharienne. Digital Pathways at Oxford, 2022. http://dx.doi.org/10.35489/bsg-dp-wp_2022/01.

Full text
Abstract:
Realities such as the COVID-19 pandemic have expedited the move to online operations, highlighting the undeniable fact that the world is continuing to go digital. This emphasises the need for policymakers to regulate in a manner that allows them to harness digital trade benefits while also avoiding associated risk. However, given that digital trade remains unco-ordinated globally, with countries adopting different approaches to policy issues, national regulatory divergence on the matter continues, placing limits on the benefits that countries can obtain from digital trade. Given these disparit
APA, Harvard, Vancouver, ISO, and other styles
8

Joel, Daniel M., Steven J. Knapp, and Yaakov Tadmor. Genomic Approaches for Understanding Virulence and Resistance in the Sunflower-Orobanche Host-Parasite Interaction. United States Department of Agriculture, 2011. http://dx.doi.org/10.32747/2011.7592655.bard.

Full text
Abstract:
Oroginal Objectives: (i) identify DNA markers linked to the avirulence (Avr) locus and locate the Avr locus through genetic mapping with an inter-race Orobanche cumana population; (ii) develop high-throughput fingerprint DNA markers for genotypingO. cumana races; (iii) identify nucleotide binding domain leucine rich repeat (NB-LRR) genes encoding R proteins conferring resistance to O. cumana in sunflower; (iv) increase the resolution of the chromosomal segment harboring Or₅ and related R genes through genetic and physical mapping in previously and newly developed mapping populations of sunflow
APA, Harvard, Vancouver, ISO, and other styles
9

Tabakovic, Momir, Stefan Savic, Andreas Türk, et al. Analysis of the Technological Innovation System for BIPV in Austria. Edited by Michiel Van Noord. International Energy Agency Photovoltaic Power Systems Programme, 2024. http://dx.doi.org/10.69766/aocp4683.

Full text
Abstract:
This report analyses the Technological Innovation System (TIS) of Building Integrated Photovoltaics (BIPV) in Austria. The study’s scope is consistent with the IEA PVPS Task 15 report [1].The analysis aims to facilitate and support the innovation, development, and implementation of industrial solutions of BIPV technologies. In Austria, the use of BIPV is still a niche application and covers under 2% of all implemented PV systems [1]. BIPV technology in Austria has historically developed with the support of different public financial incentives, national and European. The history of BIPV is som
APA, Harvard, Vancouver, ISO, and other styles
You might also be interested in the extended bibliographies on the topic 'III-V technology' for particular source types:
Journal articles Dissertations / Theses Books
We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!

To the bibliography