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Journal articles on the topic 'MEMS piezoresistive pressure sensor'

Author: Grafiati

Published: 3 June 2025

Last updated: 31 July 2025

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1

Gao, Rui, Wenjun Zhang, Junmin Jing, et al. "Design, Fabrication, and Dynamic Environmental Test of a Piezoresistive Pressure Sensor." Micromachines 13, no. 7 (2022): 1142. http://dx.doi.org/10.3390/mi13071142.

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Microelectromechanical system (MEMS) pressure sensors have a wide range of applications based on the advantages of mature technology and easy integration. Among them, piezoresistive sensors have attracted great attention with the advantage of simple back-end processing circuits. However, less research has been reported on the performance of piezoresistive pressure sensors in dynamic environments, especially considering the vibrations and shocks frequently encountered during the application of the sensors. To address these issues, this paper proposes a design method for a MEMS piezoresistive pr

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2

Samridhi, Manish Kumar, Sachin Dhariwal, Kulwant Singh, and P. A. Alvi. "Stress and frequency analysis of silicon diaphragm of MEMS based piezoresistive pressure sensor." International Journal of Modern Physics B 33, no. 07 (2019): 1950040. http://dx.doi.org/10.1142/s0217979219500401.

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This paper reports the stress and frequency analysis of dynamic silicon diaphragm during the simulation of micro-electro-mechanical-systems (MEMS) based piezoresistive pressure sensor with the help of finite element method (FEM) within the frame work of COMSOL software. Vibrational modes of rectangular diaphragm of piezoresistive pressure sensor have been determined at different frequencies for different pressure ranges. Optimal frequency range for particular applications for any diaphragm is a very important so that MEMS sensors performance should not degrade during the dynamic environment. T

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3

Shi, Xiaoqing, Yulan Lu, Bo Xie, et al. "A Double-Ended Tuning Fork Based Resonant Pressure Micro-Sensor Relying on Electrostatic Excitation and Piezoresistive Detection." Proceedings 2, no. 13 (2018): 875. http://dx.doi.org/10.3390/proceedings2130875.

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This study proposes a microfabricated resonant pressure sensor based on electrostatic excitation and low-impedance piezoresistive detection in which a pair of double-ended tuning forks were utilized as resonators for differential outputs. In operations, targeted pressures deforms the pressure-sensitive membrane, resulting in stress variations of two resonators, leading to shifts of the intrinsic resonant frequencies, which were then measured piezoresistively. The developed microfabricated resonant pressure sensor was fabricated using simple SOI-MEMS processes and quantified in both open-loop a

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4

Sokolov, L. V. "Analysis of the Main Causes of Piezoresistive Sensors Temporary Instability and Constructive Solutions of the Problem." Nano- i Mikrosistemnaya Tehnika 26, no. 3 (2024): 145–49. http://dx.doi.org/10.17587/nmst.26.145-149.

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The main reasons for the temporary instability of silicon piezoresistive sensors and MEMS in harsh operating conditions are analyzed. An innovative design of a pressure sensor MEMS-KNIMT with an integral micromechanical structure and a monolithic frame, a pressure module and an innovative method for manufacturing a pressure sensor have been developed.

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5

Du, Li Dong, Zhan Zhao, Li Xiao, Meng Ying Zhang, and Zhen Fang. "A SOI-MEMS Piezoresistive Atmosphere Pressure Sensor." Key Engineering Materials 562-565 (July 2013): 394–97. http://dx.doi.org/10.4028/www.scientific.net/kem.562-565.394.

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In this paper, a SOI-MEMS (silicon on insulator- micro electro mechanical system) pizeoresistive atmosphere pressure sensor is presented using anodic bonding. Differently from the prevailing fabrication process of silicon piezoresistive pressure sensor: the device layer monocrystalline of SOI silicon wafer is used as the strain gauge with a simple deep etching process; and the SiO2 layer of SOI silicon wafer as the insulator between strain gauge and substrate. The whole fabrication processes of the designed sensor are very simple, and can reduce the cost of sensor. The Pressure-Voltage charact

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6

Frantlovic, Milos, Ivana Jokic, Zarko Lazic, et al. "Temperature measurement performance of silicon piezoresistive MEMS pressure sensors for industrial applications." Facta universitatis - series: Electronics and Energetics 28, no. 1 (2015): 123–31. http://dx.doi.org/10.2298/fuee1501123f.

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Temperature and pressure are the most common parameters to be measured and monitored not only in industrial processes but in many other fields from vehicles and healthcare to household appliances. Silicon microelectromechanical (MEMS) piezoresistive pressure sensors are the first and the most successful MEMS sensors, offering high sensitivity, solid-state reliability and small dimensions at a low cost achieved by mass production. The inherent temperature dependence of the output signal of such sensors adversely affects their pressure measurement performance, necessitating the use of correction

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7

Hossain, Awlad, and Ahsan Mian. "Four-Terminal Square Piezoresistive Sensors for MEMS Pressure Sensing." Journal of Sensors 2017 (2017): 1–11. http://dx.doi.org/10.1155/2017/6954875.

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The sensitivity of four-terminal piezoresistive sensors commonly referred to as van der Pauw (VDP) structure is investigated. The VDP sensor is considered to be fabricated on (100) silicon due to its potential application in MEMS (microelectromechanical systems) pressure sensors. The sensitivity of the VDP sensor may be affected by misalignment during the etching/diffusion process, the nonuniformity of piezoresistive coefficients through the sensor thickness, and pad size with respect to the sensor size. For this particular analysis, the effect of VDP stress sensitivity on variations in pad si

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8

Kordrostami, Zoheir, Kourosh Hassanli, and Amir Akbarian. "MEMS piezoresistive pressure sensor with patterned thinning of diaphragm." Microelectronics International 37, no. 3 (2020): 147–53. http://dx.doi.org/10.1108/mi-09-2019-0060.

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Purpose The purpose of this study is to find a new design that can increase the sensitivity of the sensor without sacrificing the linearity. A novel and very efficient method for increasing the sensitivity of MEMS pressure sensor has been proposed for the first time. Rather than perforation, we propose patterned thinning of the diaphragm so that specific regions on it are thinner. This method allows the diaphragm to deflect more in response with regard to the pressure. The best excavation depth has been calculated and a pressure sensor with an optimal pattern for thinned regions has been desig

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9

Pan, Hai Bin, Jian Ning Ding, Guang Gui Cheng, and Hui Juan Fan. "FEM Simulation of a Twin-Island Structure Chip in Piezoresistive Pressure Sensor." Key Engineering Materials 464 (January 2011): 208–12. http://dx.doi.org/10.4028/www.scientific.net/kem.464.208.

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In this paper a twin-island structure in piezoresistive pressure sensor based on MEMS technology has been presented, and a finite element mechanical model has been developed to simulate the static mechanical behavior of this twin-island structure sensor chip, especially the stress distributions in diaphragm of the sensor chip, which has a vital significance on piezoresistive pressure sensors’ sensitivity. The possible impacts of twin-island’s location and twin-island’s width on the stress distributions, as well as the maximum value of compressive stress and tensile stress, have been investigat

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10

Maflin Shaby, S., and A. Vimala Juliet. "Analysis and Optimization of Sensitivity of a MEMS Peizoresistive Pressure Sensor." Advanced Materials Research 548 (July 2012): 652–56. http://dx.doi.org/10.4028/www.scientific.net/amr.548.652.

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This paper presents a MEMS Piezoresistive pressure sensor which utilizes a circular shaped polysilicon diaphragm with a nanowire to enhance the sensitivity of the pressure sensor. The polysilicon nanowire is fabricated in such a way that it forms a bridge between the circular polysilicon diaphragm and the substrate. The high Piezoresistive effect of Silicon nanowires is used to enhance the sensitivity. A circular polysilicon nanowire piezoresistor was fabricated by means of reactive ion etching. This paper describes the performance analysis, structural design and fabrication of piezoresistive

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11

Shi, Xiaoqing, Sen Zhang, Deyong Chen, et al. "A Resonant Pressure Sensor Based upon Electrostatically Comb Driven and Piezoresistively Sensed Lateral Resonators." Micromachines 10, no. 7 (2019): 460. http://dx.doi.org/10.3390/mi10070460.

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This study proposes a microfabricated resonant pressure sensor in which a pair of double-ended tuning forks were utilized as resonators where comb electrodes and single-crystal silicon-based piezoresistors were used for electrostatic excitation and piezoresistive detection, respectively. In operations, pressures under measurements deform the pressure-sensitive diaphragm to cause stress variations of two resonators distributed on the central and side positions of the pressure-sensitive diaphragm, where the corresponding changes of the intrinsic resonant frequencies are then captured piezoresist

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12

Shaby, S. Maflin, and A. Vimala Juliet. "Analysis of Sensitivity and Linearity of SiGe MEMS Piezoresistive Pressure Sensor." Applied Mechanics and Materials 241-244 (December 2012): 1024–27. http://dx.doi.org/10.4028/www.scientific.net/amm.241-244.1024.

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In this paper a surface micromachined MEMS Piezoresistive pressure sensor was designed. A simulation programs were developed to predict the sensitivity and linearity behavior of the piezoresistive pressure sensor. Based on the small and large deflection theory the diaphragm performances were analyzed. Different diaphragm shape, pressure range, placement of resistors and the properties of the resistors were considered during the analysis. The output response of the pressure sensor was also found as a function of temperature and pressure. It was found that silicon germanium gave better sensitivi

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13

Hsueh, H. T., L. T. Lai, Y. M. Juan, S. W. Huang, T. C. Cheng, and Y. D. Lin. "Heterogeneous sensors of pressure sensor and ultraviolet photodetector fabricated by vertical 3D stacking as a multi-functional device." RSC Advances 6, no. 100 (2016): 97976–82. http://dx.doi.org/10.1039/c6ra23377e.

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14

Nabeshima, Taiga, Thanh-Vinh Nguyen, and Hidetoshi Takahashi. "Frequency Characteristics of Pulse Wave Sensor Using MEMS Piezoresistive Cantilever Element." Micromachines 13, no. 5 (2022): 645. http://dx.doi.org/10.3390/mi13050645.

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Wearable sensor devices with minimal discomfort to the wearer have been widely developed to realize continuous measurements of vital signs (body temperature, blood pressure, respiration rate, and pulse wave) in many applications across various fields, such as healthcare and sports. Among them, microelectromechanical systems (MEMS)-based differential pressure sensors have garnered attention as a tool for measuring pulse waves with weak skin tightening. Using a MEMS-based piezoresistive cantilever with an air chamber as the pressure change sensor enables highly sensitive pulse-wave measurements

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15

Li, Tao, Guo Jing Ren, Li Feng Qi, and Zhi Min Liu. "The Electricity Design of Pressure Sensor." Applied Mechanics and Materials 438-439 (October 2013): 539–42. http://dx.doi.org/10.4028/www.scientific.net/amm.438-439.539.

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The relative discussion and research of Micro-Electro-Mechanical System (MEMS) and pressure sensor is carried out in this paper. The working principle of pressure sensor is analyzed, and the cantilever piezoresistive pressure sensor is studied in details. The electricity design of pressure sensor is researched. The open loop Wheatstone-bridge design is adopted in this paper, which adds the freedom of disposing circuit.

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16

Song, Zi Jun, Xiang Wang, Yan Li, Hai Sheng San, and Yu Xi Yu. "Design and Fabrication of an Improved MEMS-Based Piezoresistive Pressure Sensor." Advanced Materials Research 482-484 (February 2012): 318–21. http://dx.doi.org/10.4028/www.scientific.net/amr.482-484.318.

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An improved piezoresistive pressure sensor is designed for harsh environment application. The highlight of this design is that the Wheatstone bridge circuit is put in lower surface of pressure diaphragm and sealed in the vacuum pressure cavity. The bridge circuit is led out by embedded Al electrodes on bonding surface. ANSYS software has been used to analyze the stress distribution of the diaphragm. By using the MEMS technology, the pressure sensor with the dimension of 1.5mm×1.5mm×500µm is fabricated. The performance of piezoresistive pressure sensor, including output, sensitivity, and nonlin

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17

Shi, Xiaoqing, Yulan Lu, Bo Xie, et al. "A Resonant Pressure Microsensor Based on Double-Ended Tuning Fork and Electrostatic Excitation/Piezoresistive Detection." Sensors 18, no. 8 (2018): 2494. http://dx.doi.org/10.3390/s18082494.

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This paper presents a resonant pressure microsensor relying on electrostatic excitation and piezoresistive detection where two double-ended tuning forks were used as resonators, enabling differential outputs. Pressure under measurement caused the deformation of the pressure sensitive membrane, leading to stress buildup of the resonator under electrostatic excitation with a corresponding shift of the resonant frequency detected piezoresistively. The proposed microsensor was fabricated by simplified SOI-MEMS technologies and characterized by both open-loop and closed-loop circuits, producing a q

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18

Zhao, Li Bo, Xu Dong Fang, Yu Long Zhao, Zhuang De Jiang, and Yong Li. "A High Pressure Sensor with Circular Diaphragm Based on MEMS Technology." Key Engineering Materials 483 (June 2011): 206–11. http://dx.doi.org/10.4028/www.scientific.net/kem.483.206.

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A pressure sensor in the range of 25 MPa with circular diaphragm is designed and fabricated, and the calibration experiments prove its excellent performance, which also reflects the correct choice of design after analyzing the effect of diaphragm dimension, location and shapes of piezoresistors. Circular diaphragms of different thickness and diameters are simulated to meet the pressure requirement of 25 MPa. It also displays the advantage of piezoresistive sensors over others and the difference characteristics between different types of piezoresistive sensors. And then the effect of piezoresis

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19

Li, Min, Yang Xiao, Jiahong Zhang, Qingquan Liu, Xianglong Jiang, and Wenhao Hua. "Development of Highly Sensitive and Thermostable Microelectromechanical System Pressure Sensor Based on Array-Type Aluminum–Silicon Hybrid Structures." Micromachines 15, no. 9 (2024): 1065. http://dx.doi.org/10.3390/mi15091065.

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In order to meet the better performance requirements of pressure detection, a microelectromechanical system (MEMS) piezoresistive pressure sensor utilizing an array-type aluminum–silicon hybrid structure with high sensitivity and low temperature drift is designed, fabricated, and characterized. Each element of the 3 × 3 sensor array has one stress-sensitive aluminum–silicon hybrid structure on the strain membrane for measuring pressure and another temperature-dependent structure outside the strain membrane for measuring temperature and temperature drift compensation. Finite-element numerical s

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20

Lim, Li Shiah, Woo Tae Park, Liang Lou, Han Hua Feng, and Pushpapraj Singh. "Design, Fabrication and Characterization of Ultra Miniature Piezoresistive Pressure Sensors for Medical Implants." Advanced Materials Research 254 (May 2011): 94–98. http://dx.doi.org/10.4028/www.scientific.net/amr.254.94.

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Pressure sensors using MEMS technology have been advanced due to their low cost, small size and high sensitivity, which is an advantage for biomedical applications. In this paper,silicon nanowire was proposed to be used as the piezoresistors due to the high sensitivity [1][2].The sensors were designed, and characterized for the use of medical devices for pressure monitoring. The pressure sensor size is 2mm x 2mm with embedded SiNWs of 90nm x150nm been fabricated. Additionally, the sensitivity of 0.0024 Pa-1 pressure sensor has been demonstrated.

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21

Szczerba, Zygmunt, Piotr Szczerba, Kamil Szczerba, and Krzysztof Pytel. "Acceleration-Insensitive Pressure Sensor for Aerodynamic Analysis." Energies 16, no. 7 (2023): 3040. http://dx.doi.org/10.3390/en16073040.

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This paper presents a method for preparing a pressure sensor that is insensitive to acceleration along with experimental evidence of its efficacy in aerodynamic analysis. A literature review and preliminary studies revealed the undesirable effect of acceleration on sensors that are located on moving elements, as evidenced by deviations from actual pressure values for piezoresistive pressure sensors that are made using MEMS technology. To address this, the authors developed a double-membrane sensor geometry that eliminated this imperfection; a method of implementing two solo pressure sensors as

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22

Nguyen, Thanh-Vinh, Yuya Mizuki, Takuya Tsukagoshi, Tomoyuki Takahata, Masaaki Ichiki, and Isao Shimoyama. "MEMS-Based Pulse Wave Sensor Utilizing a Piezoresistive Cantilever." Sensors 20, no. 4 (2020): 1052. http://dx.doi.org/10.3390/s20041052.

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This paper reports on a microelectromechanical systems (MEMS)-based sensor for pulse wave measurement. The sensor consists of an air chamber with a thin membrane and a 300-nm thick piezoresistive cantilever placed inside the chamber. When the membrane of the chamber is in contact with the skin above a vessel of a subject, the pulse wave of the subject causes the membrane to deform, leading to a change in the chamber pressure. This pressure change results in bending of the cantilever and change in the resistance of the cantilever, hence the pulse wave of the subject can be measured by monitorin

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23

Dr., Shanmugavalli. M., G. Vignesh., R. Harish., Nesan. G. Nicolas, and Kumar. J. Parithi. "Design and Simulation of Piezoresistive Pressure Sensor using Intellisuite." International Journal of Multidisciplinary Research Transactions 5, no. 5 (2023): 27–37. https://doi.org/10.5281/zenodo.7868910.

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The Piezoresistive Pressure Sensor given in this study describes the best methods for enhancing the sensor's performance. To get findings that are roughly equivalent to theoretical values, finite element analysis is used as part of the design process. The size, shape, and position of the piezo resistors are taken into account during the simulation. The piezo resistors, which are coupled in the shape of a Wheatstone bridge, convert the applied pressure into electricity. By choosing the appropriate membrane geometry and piezo resistor placement, the sensitivity of the sensor can be increased

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Jiang, Zhuang De, Li Bo Zhao, Yu Long Zhao, Yuan Hao Liu, Philip D. Prewett, and Kyle Jiang. "Oil-Filled Isolated High Pressure Sensor for High Temperature Application." Key Engineering Materials 437 (May 2010): 397–401. http://dx.doi.org/10.4028/www.scientific.net/kem.437.397.

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In order to solve pressure measurement problems in the fields of aerospace, petroleum and chemical industry, mobile and military industry, a oil-filled isolated piezoresistive high pressure sensor has been developed with the range of 0~100 MPa, and was able to work reliably under high temperature of above 200 °C. Based on MEMS (Micro Electro-Mechanical System) and SIMOX (Separation by Implantation of Oxygen) technology, the piezoresistive sensor chip has been developed. By high temperature packaging process, the oil-filled isolated high pressure sensor was fabricated with the sensor chip and c

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25

Mahruz, Tamim Al, Rezwan Matin, Fahim Bin Wahid, and Tuhin Dev. "Material and Performance Analysis of MEMS Piezoresistive Pressure Sensor." International Journal of Engineering Trends and Technology 31, no. 1 (2016): 10–14. http://dx.doi.org/10.14445/22315381/ijett-v31p202.

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26

Xu, Zebin, Jiahui Yan, Meilin Ji, et al. "An SOI-Structured Piezoresistive Differential Pressure Sensor with High Performance." Micromachines 13, no. 12 (2022): 2250. http://dx.doi.org/10.3390/mi13122250.

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This paper presents a piezoresistive differential pressure sensor based on a silicon-on-insulator (SOI) structure for low pressure detection from 0 to 30 kPa. In the design phase, the stress distribution on the sensing membrane surface is simulated, and the doping concentration and geometry of the piezoresistor are evaluated. By optimizing the process, the realization of the pressure sensing diaphragm with a controllable thickness is achieved, and good ohmic contact is ensured. To obtain higher sensitivity and high temperature stability, an SOI structure with a 1.5 µm ultra-thin monocrystallin

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27

Qi, Li Feng, Zhi Min Liu, Xing Ye Xu, Guan Zhong Chen, and Xue Qing. "Study and Analysis of MEMS Pressure Sensor Based on Applied Mechanics." Advanced Materials Research 771 (September 2013): 159–62. http://dx.doi.org/10.4028/www.scientific.net/amr.771.159.

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The relative research of low range and high anti-overload piezoresistive pressure sensor is carried out in this paper and a new kind of sensor chip structure, the double ends-four beam structure, is proposed. Trough the analysis, the sensor chip structure designed in this paper has high sensitivity and linearity. The chip structure is specially suit for the micro-pressure sensor. The theoretical analysis and finite element analysis is taken in this paper, which provide important scientific basis for the pressure sensor development.

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Suja, K. J., Bhanu Pratap Chaudhary, and Rama Komaragiri. "Design and Simulation of Pressure Sensor for Ocean Depth Measurements." Applied Mechanics and Materials 313-314 (March 2013): 666–70. http://dx.doi.org/10.4028/www.scientific.net/amm.313-314.666.

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MEMS (Micro Electro Mechanical System) are usually defined as highly miniaturized devices combining both electrical and mechanical components that are fabricated using integrated circuit batch processing techniques. Pressure sensors are usually manufactured using square or circular diaphragms of constant thickness in the order of few microns. In this work, a comparison between circular diaphragm and square diaphragm indicates that square diaphragm has better perspectives. A new method for designing diaphragm of the Piezoresistive pressure sensor for linearity over a wide pressure range (approx

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Das, Kakali, and Himadri S. Dutta. "Improved Sensitivity of MEMS-based Piezoresistive Pressure Sensor using Silicon Nitride Diaphragm." Journal of Integrated Circuits and Systems 19, no. 1 (2024): 1–8. http://dx.doi.org/10.29292/jics.v19i1.755.

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In this paper, Piezoresistive Pressure Sensor (PPS) with four Polysilicon piezoresistors on Si3N4 diaphragm with improved sensitivity is successfully designed by using MEMS technology. Sensing is accomplished via deposited polysilicon resistors like metal resistors. The analytical model of PPS is optimized for location and geometry of the piezoresistors and the sensors based on different aspect ratios (both square and rectangular) have been investigated. The performance parameters like maximum deflection, maximum induced stress on the diaphragm have been compared using ANSYS and MATLAB simulat

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Täschner, Robert, Erik Hiller, and Michael Blech. "Offset stable piezoresistive high-temperature pressure sensors based on silicon." Journal of Sensors and Sensor Systems 5, no. 1 (2016): 197–203. http://dx.doi.org/10.5194/jsss-5-197-2016.

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Abstract. The exploitation of new application fields and the drive to size reduction even in highly stable pressure sensing systems makes the extension of the operating temperature range of the microelectromechanical sensors (MEMS) essential. For this reason a silicon-based pressure sensor with an application temperature ranging up to 300 °C and the associated manufacturing technology was developed. With special design and manufacturing approaches mounting stress-insensitive sensors with high linearity, excellent offset stability, low hysteresis and low sensitivity changes over the entire temp

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31

Zhang, Yunfan, Bowen Li, Hui Li, et al. "Investigation of Potting-Adhesive-Induced Thermal Stress in MEMS Pressure Sensor." Sensors 21, no. 6 (2021): 2011. http://dx.doi.org/10.3390/s21062011.

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Thermal stress is one of the main sources of micro-electro-mechanical systems (MEMS) devices error. The Wheatstone bridge is the sensing structure of a typical piezoresistive MEMS pressure sensor. In this study, the thermal stress induced by potting adhesive in MEMS pressure sensor was investigated by experiments, calculated by analytics and analyzed by simulations. An experiment system was used to test the sensor at different air pressures and temperatures. The error becomes greater with the decrease in pressure. A set of novel formulas were proposed to calculate the stress–strain on Wheatsto

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Xiao, Li, Li Dong Du, Zhan Zhao, Zhen Fang, and Jing Xu. "TCR of the Ni-Cr Thin Film Resistors Used in Piezoresistive Pressure Sensor." Key Engineering Materials 483 (June 2011): 735–39. http://dx.doi.org/10.4028/www.scientific.net/kem.483.735.

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In this paper, temperature characteristic of Ni-Cr thin film resistors is studied which have a low temperature drifting coefficient and used in a kind of metal piezoresistive pressure sensors based on MEMS technology. Normally, Ni-Cr alloys have a small temperature coefficient of resistance (TCR) compared with some other metal materials. But it depends on the composition of Ni and Cr in the alloy and on the annealing process under different temperature. Through the research of the effect of the composition of the alloy and annealing cycles, it is found that 50:50wt% Ni-Cr thin film has negativ

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Liao, Binlong, Xiang Pu, Zehua Bi, and Guosheng He. "Study of pressure measurement technique using MEMS pressure sensors integrated on built-in printed circuit board." Journal of Physics: Conference Series 2820, no. 1 (2024): 012091. http://dx.doi.org/10.1088/1742-6596/2820/1/012091.

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Abstract Surface pressure measurement is an important part of aerodynamic research. In this study, a novel pressure measurement system based on Micro-Electro Mechanical System (MEMS) pressure sensors was designed and fabricated. The selected integrated silicon piezoresistive sensors are characterized by small size, low cost, high accuracy, and easy integration. Multi-channel simultaneous measurement of surface pressure is realized by integrating multiple sensors in a self-designed printed circuit board (PCB). A U-shape tube differential pressure device was used to calibrate the constructed pre

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Tan, Qiu Lin, Xian Sheng Zhang, Li Qiong Ding, and Zhao Ying Zhou. "Design of Water Pressure Sensor Applied to the Eye Aqueous Humor Detection." Key Engineering Materials 609-610 (April 2014): 1023–28. http://dx.doi.org/10.4028/www.scientific.net/kem.609-610.1023.

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Aimed at the dynamic pressure measurement, this paper presents a pressure sensor based on MEMS technology. An absolute pressure sensor is in one silicon chip of which the size is 3.05mm×3.05mm with the diaphragm thickness of 890μm. We combine Piezoresistive Bridge with signal conditioning chip, and design a gain adjustable, high sensitivity dynamic pressure sensors. By changing the depth of the sensor in water, the resulting change in the resistor signal is then used to calculate the depth of the water. The experimental results show that the measuring accuracy can reach 2×10-4V per 1mm (water

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Devi, Rekha, and Sandeep Singh Gill. "Stress and Deformation Analysis of Piezoresistive Square Diaphragm Nano Pressure Sensor." Sensor Letters 17, no. 9 (2019): 704–9. http://dx.doi.org/10.1166/sl.2019.4132.

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Pressure sensors are among the most widely used MEMS product as sensors in commercial and industrial applications. The diaphragm structure, thickness, and dimensions along with the placement, size, and shape of the piezo resistors are important in the process of designing a pressure sensor. This paper presents the design and simulation of the square diaphragm to analysis the deformation and stress of various materials as well as for the different thickness of the diaphragms at low pressure in the range of 0.1 to 1.5 bar. The design of diaphragm is as a 10 μm thick square diaphragm with 800 μm

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Chiou, J. Albert, Steven Chen, and Jinbao Jiao. "Humidity-Induced Voltage Shift on MEMS Pressure Sensors." Journal of Electronic Packaging 125, no. 4 (2003): 470–74. http://dx.doi.org/10.1115/1.1615249.

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The pressure sensor is one of the major applications of microelectromechanical systems (MEMS). An absolute pressure sensor utilizes anodic bonding to create a vacuum cavity between the silicon diaphragm and glass substrate. The manifold absolute pressure (MAP) sensing elements from a new supplier have exhibited negative voltage shifts after exposure to humidity. A hypothesis has been established that poor anodic bonding causes an angstrom-level gap between the silicon substrate and glass. Once moisture enters the gap in a vapor form and condenses as water droplets, surface tension can induce a

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Kishore, Kaushal, S. Santosh Kumar, Ravindra Mukhiya, and Sheikh Ali Akbar. "High-resolution current mode interface for MEMS piezoresistive pressure sensor." AEU - International Journal of Electronics and Communications 134 (May 2021): 153707. http://dx.doi.org/10.1016/j.aeue.2021.153707.

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Zhou, Yongjun, Wenman Han, Shuai Shi, Qiwei Zhang, and Tao Guo. "The structure design of piezoresistive pressure sensor based on MEMS." Journal of Physics: Conference Series 1650 (October 2020): 022082. http://dx.doi.org/10.1088/1742-6596/1650/2/022082.

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Rajavelu, Muthapillai, Dhakshnamoorthy Sivakumar, Joseph Daniel Rathnam, and Koilmani Sumangala. "Enhanced sensitivity with extended linearity in MEMS piezoresistive pressure sensor." Micro & Nano Letters 8, no. 10 (2013): 753–56. http://dx.doi.org/10.1049/mnl.2013.0496.

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Manuvinakurake, Manjunath, Uma Gandhi, Mangalanathan Umapathy, and Manjunatha M. Nayak. "Bossed diaphragm coupled fixed guided beam structure for MEMS based piezoresistive pressure sensor." Sensor Review 39, no. 4 (2019): 586–97. http://dx.doi.org/10.1108/sr-10-2018-0275.

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Purpose Structures play a very important role in developing pressure sensors with good sensitivity and linearity, as they undergo deformation to the input pressure and function as the primary sensing element of the sensor. To achieve high sensitivity, thinner diaphragms are required; however, excessively thin diaphragms may induce large deflection and instability, leading to the unfavorable performances of a sensor in terms of linearity and repeatability. Thereby, importance is given to the development of innovative structures that offer good linearity and sensitivity. This paper aims to inves

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Wang, Honghui, Dingkang Zou, Peng Peng, Guangle Yao, and Jizhou Ren. "A Novel High-Sensitivity MEMS Pressure Sensor for Rock Mass Stress Sensing." Sensors 22, no. 19 (2022): 7593. http://dx.doi.org/10.3390/s22197593.

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This paper proposes a novel high-sensitivity micro-electromechanical system (MEMS) piezoresistive pressure sensor that can be used for rock mass stress monitoring. The entire sensor consists of a cross, dual-cavity, and all-silicon bulk-type (CCSB) structure. Firstly, the theoretical analysis is carried out, and the relationship between the structural parameters of the sensor and the stress is analyzed by finite element simulation and curve-fitting prediction, and then the optimal structural parameters are also analyzed. The simulation results indicate that the sensor with the CCSB structure p

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Song, Peishuai, Chaowei Si, Mingliang Zhang, et al. "A Novel Piezoresistive MEMS Pressure Sensors Based on Temporary Bonding Technology." Sensors 20, no. 2 (2020): 337. http://dx.doi.org/10.3390/s20020337.

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A miniature piezoresistive pressure sensor fabricated by temporary bonding technology was reported in this paper. The sensing membrane was formed on the device layer of an SOI (Silicon-On-Insulator) wafer, which was bonded to borosilicate glass (Borofloat 33, BF33) wafer for supporting before releasing with Cu-Cu bonding after boron doping and electrode patterning. The handle layer was bonded to another BF33 wafer after thinning and etching. Finally, the substrate BF33 wafer was thinned by chemical mechanical polishing (CMP) to reduce the total device thickness. The copper temporary bonding la

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Yang, Jian, Jiao Xu, Yugang Yin, et al. "Research on the Fabrication of 4H-SiC Ohmic Contact for Application in MEMS Pressure Sensors." Journal of Physics: Conference Series 2982, no. 1 (2025): 012045. https://doi.org/10.1088/1742-6596/2982/1/012045.

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Abstract The ohmic contact is a key factor of SiC piezoresistive pressure sensors. In order to improve the performance of the sensors and reduce the metal-semiconductor contact impedance, the fabrication and characterization of the n-type 4H-SiC ohmic contact are studied. Phosphorus (P) ion implantation is employed on SiC substrate by ion implantation process. Based on the Monte Carlo model, the process is simulated and analyzed by the stopping and range of ions in matter (SRIM) software. And the n-type heavy doping is realized. The multiple metal layers Ta/Ni/Pt were used as the metal electro

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Nag, Meetu, Bhanu Pratap, and Ajay Kumar. "Multi objective design optimization of graphene piezoresistive MEMS pressure sensor using design of experiment." International Journal for Simulation and Multidisciplinary Design Optimization 13 (2022): 27. http://dx.doi.org/10.1051/smdo/2022018.

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This paper investigates the effect of diaphragm thickness, dimensions of piezoresistors, doping profile and temperature compatibility on sensitivity and non-linearity of graphene MEMS pressure sensor. Taguchi method is used for maximizing the sensitivity and minimizing the nonlinearity of the designed pressure sensor. L27 orthogonal array is utilized for five input factors with three levels. Output voltage is obtained from simulation in COMSOL for different combinations of the input parameters as per L27 orthogonal array. It was found that diaphragm thickness and length of the sensing element

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Et.al, S. Suganthi. "Study and Analysis of the Effective Geometries for the Piezoresistive Pressure Sensors." Turkish Journal of Computer and Mathematics Education (TURCOMAT) 12, no. 6 (2021): 281–88. http://dx.doi.org/10.17762/turcomat.v12i6.1367.

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THE REPORTED WORK IS ON THE DESIGN AND SIMULATION OF MICROELECTROMECHANICAL SYSTEMS (MEMS) BASED SILICON PIEZORESISTIVE PRESSURE SENSOR DEPLOYED TOSENSE PRESSURE IN THE RANGE OF 0 TO 1.1 BAR. THE PRESSURE IS APPLIED ON THE DIAPHRAGM CONSISTING OF FOUR PIEZORESISTORS CONNECTED IN THE WHEATSTONE BRIDGE CONFIGURATION. THE INDUCED STRESS AS A RESULT OF THE PRESSURE CAUSES CHANGE IN RESISTANCE OF PIEZORESISTORS DUE TO PIEZORESISTIVE EFFECT. THE DESIGN AND SIMULATION OF THE SENSORS PRIOR TO FABRICATION HELPS US TO OPTIMIZE THE DIAPHRAGM THICKNESS AND SIZE. MEANDER SHAPED PIEZORESISTORS WITH DIFFEREN

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Wang, Hexing, and Jia Li. "Machine Learning and Swarm Optimization Algorithm in Temperature Compensation of Pressure Sensors." Sensors 22, no. 21 (2022): 8309. http://dx.doi.org/10.3390/s22218309.

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The main temperature compensation method for MEMS piezoresistive pressure sensors is software compensation, which processes the sensor data using various algorithms to improve the output accuracy. However, there are few algorithms designed for sensors with specific ranges, most of which ignore the operating characteristics of the sensors themselves. In this paper, we propose three temperature compensation methods based on swarm optimization algorithms fused with machine learning for three different ranges of sensors and explore the partitioning ratio of the calibration dataset on Sensor A. The

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Sosa, J., Juan A. Montiel-Nelson, R. Pulido, and Jose C. Garcia-Montesdeoca. "Design and Optimization of a Low Power Pressure Sensor for Wireless Biomedical Applications." Journal of Sensors 2015 (2015): 1–13. http://dx.doi.org/10.1155/2015/352036.

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A blood pressure sensor suitable for wireless biomedical applications is designed and optimized. State-of-the-art blood pressure sensors based on piezoresistive transducers in a full Wheatstone bridge configuration use low ohmic values because of relatively high sensitivity and low noise approach resulting in high power consumption. In this paper, the piezoresistance values are increased in order to reduce by one order of magnitude the power consumption in comparison with literature approaches. The microelectromechanical system (MEMS) pressure sensor, the mixed signal circuits signal condition

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K, Kavitha. "Design and Displacement Analysis of Three different Cantilever based MEMS Piezoresistive Pressure Sensor with Polymer (PDMS/PMMA) Thin Flim." Revista Gestão Inovação e Tecnologias 11, no. 2 (2021): 1629–40. http://dx.doi.org/10.47059/revistageintec.v11i2.1786.

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This paper mainly focuses on to get high displacement from polymer based piezoresistive cantilever for MEMS/NEMS pressure sensor applications. The displacement has been analyzed and compared with three different cantilever using PDMS (Poly dimethyl siloxane) and PMMA (Poly methyl methacrylate) materials. The p-type silicon piezoresistors connected the form based on wheat stone bridge to get high sensible pressure sensor with respect to low response. An according to get high displacement, obviously the other performance of parameters such as stress, strain gets high range. So, this analyzed can

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Pramanik, C., T. Islam, and H. Saha. "Impact of Self Heating in a Silicon MEMS Piezoresistive Pressure Sensor." Sensor Letters 2, no. 2 (2004): 131–37. http://dx.doi.org/10.1166/sl.2004.040.

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Shaby, S. Maflin, M. S. Godwin Premi, and Betty Martin. "Enhancing the Performance of MEMS Piezoresistive Pressure Sensor Using Germanium Nanowire." Procedia Materials Science 10 (2015): 254–62. http://dx.doi.org/10.1016/j.mspro.2015.06.048.

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