Relevant bibliographies by topics / Metalorganic Vapor Phase Epitaxy (MOVPE)

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Metalorganic Vapor Phase Epitaxy (MOVPE)'

Author: Grafiati
Published: 4 June 2021
Last updated: 6 September 2023

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Journal articles on the topic "Metalorganic Vapor Phase Epitaxy (MOVPE)"

1

Shen, Xu-Qiang, Kazutoshi Kojima, Mitsuaki Shimizu, and Hajime Okumura. "Ammonia-free high temperature metalorganic vapor phase epitaxy (AFHT-MOVPE): a new approach to high quality AlN growth." CrystEngComm 20, no. 45 (2018): 7364–70. http://dx.doi.org/10.1039/c8ce01473f.

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Lim, P. H., B. Schineller, O. Schön, K. Heime, and M. Heuken. "Photoluminescence of GaN:Mg grown by metalorganic vapor-phase epitaxy (MOVPE)." Journal of Crystal Growth 205, no. 1-2 (1999): 1–10. http://dx.doi.org/10.1016/s0022-0248(99)00245-6.

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Bagaev T. A., Ladugin M. A., Marmalyuk A. A., et al. "3.8 THz quantum cascade laser grown by metalorganic vapor phase epitaxy." Technical Physics Letters 48, no. 5 (2022): 46. http://dx.doi.org/10.21883/tpl.2022.05.53479.19162.

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We have demonstrated a quantum cascade laser (QCL) with a generation frequency of about 3.8 THz, grown by metal-organic vapor phase epitaxy. The multilayer heterostructure for QCLs consists of 185 repetitions of an active module containing four GaAs/Al0.15Ga0.85As quantum wells. The threshold current and threshold voltage of the fabricated QCL were 2.25 kA/cm2 and 19.7 V, respectively. The QCL oscillations were carried out in the multimode regime, and the detection of terahertz radiation continued with an increase in the laser temperature up to 60 K. Keywords: quantum cascade lasers, terahertz
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Pohl, Udo W., Kerstin Knorr, Carsten Möller, et al. "Low-Temperature Metalorganic Vapor Phase Epitaxy (MOVPE) of GaN using Tertiarybutylhydrazine." Japanese Journal of Applied Physics 38, Part 2, No. 2A (1999): L105—L107. http://dx.doi.org/10.1143/jjap.38.l105.

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Amano, Hiroshi, Masataka Imura, Motoaki Iwaya, Satoshi Kamiyama, and Isamu Akasaki. "AlN and AlGaN by MOVPE for UV Light Emitting Devices." Materials Science Forum 590 (August 2008): 175–210. http://dx.doi.org/10.4028/www.scientific.net/msf.590.175.

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The fundamental growth issues of AlN and AlGaN on sapphire and SiC using metalorganic vapor phase epitaxy, particularly the growth of AlN and AlGaN on a groove-patterned template are reviewed. In addition, the conductivity control of AlGaN is shown. The conductivity control of p-type AlGaN, particularly the realization of a high hole concentration, is essential for realizing high-efficiency UV and DUV LEDs and LDs.
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Анисимов, А. Н., А. А. Вольфсон та Е. Н. Мохов. "Спектры рамановского рассеяния толстых эпитаксиальных слоев GaN на SiC, полученных сублимационным сандвич-методом". Физика и техника полупроводников 52, № 9 (2018): 1104. http://dx.doi.org/10.21883/ftp.2018.09.46283.8845.

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AbstractThe Raman spectra of thick (~100 μm and more) GaN layers grown on crystalline SiC substrates by the sublimation sandwich method are studied. Good agreement between the spectra of the SiC substrates used in the study and published data indicates that the measurements made in the study are reliable. The minimum difference between the results of the measurements and published evidence for GaN layers means that the layers grown by the sublimation sandwich method in the study compare well with those fabricated by the metalorganic vapor phase epitaxy (MOVPE) or chloride-hydride vapor phase e
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Zhang, R., L. Zhang, D. M. Hansen, et al. "Epitaxial Lateral Overgrowth of GaN with Chloride-Based Growth Chemistries in Both Hydride and Metalorganic Vapor Phase Epitaxy." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 465–70. http://dx.doi.org/10.1557/s1092578300002908.

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Epitaxial lateral overgrowth (ELO) of GaN on SiO2-masked (0001) GaN substrates has been investigated by using chloride-based growth chemistries via hydride vapor phase epitaxy (HVPE) and metal organic vapor phase epitaxy (MOVPE). Diethyl gallium chloride, (C2H5)2GaCl, was used in as the MOVPE Ga precursor. The lateral and vertical growth rates as well as the overgrowth morphology of ELO GaN structures are dependent on growth temperature, V/III ratio and the in-plane orientation of the mask opening. A high growth temperature and low V/III ratio increase the lateral growth rate and produce ELO s
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Roth, A. P., D. Beckett, V. S. Sundaram, and R. Yakimova. "Propriétés électriques de l'arséniure de gallium dopé à l'étain, déposé par épitaxie en phase vapeur à partir d'organometalliques." Canadian Journal of Physics 63, no. 6 (1985): 670–74. http://dx.doi.org/10.1139/p85-103.

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The carrier mobility has been measured between 10 and 300 K in epitaxial layers of Sn-doped GaAs grown by metalorganic vapor-phase epitaxy (MOVPE). Experimental and calculated values are compared to obtain the compensation ratios. It is shown that above 77 K the experimental mobility can be calculated in a satisfactory way only by including scattering by localized potential centers.
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Hofmann, L., A. Knauer, I. Rechenberg, and M. Weyers. "Overgrowth of trenches with (AlGa)As using metalorganic vapor-phase epitaxy (MOVPE)." Journal of Crystal Growth 195, no. 1-4 (1998): 485–89. http://dx.doi.org/10.1016/s0022-0248(98)00575-2.

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Kim, T. W., T. J. Garrod, L. J. Mawst, et al. "Characteristics of bulk InGaAsSbN/GaAs grown by metalorganic vapor phase epitaxy (MOVPE)." Journal of Crystal Growth 370 (May 2013): 163–67. http://dx.doi.org/10.1016/j.jcrysgro.2012.06.043.

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Dissertations / Theses on the topic "Metalorganic Vapor Phase Epitaxy (MOVPE)"

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Balmer, Richard. "MOVPE growth and optical monitoring of A1GaN films." Thesis, University of Nottingham, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.289471.

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Cheng, Siu F. "Metalorganic vapor-phase epitaxy of compound semiconductor Alloys." Diss., Restricted to subscribing institutions, 2007. http://proquest.umi.com/pqdweb?did=1495961311&sid=1&Fmt=2&clientId=1564&RQT=309&VName=PQD.

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Markurt, Toni. "Transmission electron microscopy investigation of growth and strain relaxation mechanisms in GaN (0001) films grown on silicon (111) substrates." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät, 2016. http://dx.doi.org/10.18452/17405.

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In dieser Arbeit untersuchen wir die grundlegenden Wachstums- und Relaxationsprozesse, die es erlauben den Verzerrungszustand von GaN (0001) beim Wachstum auf Silizium (111) Substraten einzustellen und die resultierende Dichte an Durchstoßversetzungen zu reduzieren. Zu deren Analyse werden GaN (0001) Schichten, die mittels metallorganischer Gasphasenepitaxy abgeschieden worden sind, hauptsächlich mit transmissionselekronenmikroskopischen Methoden untersucht. Die wesentlichen Erkenntnisse der Arbeit sind: (i) Der Aufbau einer kompressiven Verzerrung von GaN (0001) Filmen mittels AlGaN Zwischen
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Venkataramani, Rajesh 1972. "Multiscale models of the metalorganic vapor phase epitaxy process." Thesis, Massachusetts Institute of Technology, 2000. http://hdl.handle.net/1721.1/26883.

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Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 2000.<br>Includes bibliographical references.<br>This thesis develops modeling techniques for chemical vapor deposition processes, specifically metalorganic vapor phase epitaxy (MOVPE). The difficulty in creating an overall modeling strategy for the MOVPE process is that important processes occur on a wide range of length and time scales. Gas phase heat and mass transfer affect the flux of species to the surface, while atomic processes affect the morphology of the growing film. In this thesis, new computation
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Pérez-Solórzano, Borragán Victoria. "Self-assembled (Al)GaInN quantum dots grown by metalorganic vapor phase epitaxy." Tönning Lübeck Marburg Der Andere Verl, 2008. http://d-nb.info/987860828/04.

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Abounadi, Abdelhadi. "Etude des propriétés optiques du semiconducteur ZnS et d'un super-réseau ZnS-ZnSe élaborés par MOVPE [MetalOrganic Chemical Vapor Epitaxy]." Montpellier 2, 1994. http://www.theses.fr/1994MON20134.

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Ce memoire est consacre a l'etude des proprietes optiques du compose semiconducteur zns et d'un super-reseau zns-znse forme de 45 periodes de 33 a de zns et 37a de znse, epitaxiees par movpe. Les mesures experimentales et les calculs theoriques de la reflectivite (par le modele de la dispersion spatiale a deux oscillateurs) permettent de determiner les proprietes des differentes couches fabriquees a differentes temperatures. Ces resultats joints a la mesure des rapports des intensites des pics de photoluminescence montrent que la couche epitaxiee a 300c presente la meilleur qualite optique, co
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Vankova, Viera. "Metalorganic vapour phase epitaxial growth and characterisation of Sb-based semiconductors." Thesis, Nelson Mandela Metropolitan University, 2005. http://hdl.handle.net/10948/d1019678.

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This study focuses on the growth and characterization of epitaxial InAs and InAs1-xSbx. Layers are grown on InAs, GaAs and GaSb substrates by metalorganic vapour phase epitaxy, using trimethylindium, trimethylantimony and arsine as precursors. The growth parameters (V/III ratio, Sb vapour phase compositions) are varied in the temperature range from 500 ºC to 700 ºC, in order to study the influence of these parameters on the structural, optical and electrical properties of the materials. The layers were assessed by X-ray diffraction, electron and optical microscopy, photoluminescence and Hall m
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Steins, Roger. "New process approaches to metalorganic vapor phase epitaxy of III-nitrides for high power HEMTs." [S.l.] : [s.n.], 2006. http://deposit.ddb.de/cgi-bin/dokserv?idn=983408033.

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Funato, Mitsuru. "Control of Interface Properties in ZnSe-GaAs Heterovalent Heterostructures Grown by Metalorganic Vapor Phase Epitaxy." Kyoto University, 1999. http://hdl.handle.net/2433/77935.

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Honda, Y., Y. Kuroiwa, M. Yamaguchi, and N. Sawaki. "Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor-phase epitaxy." American Institute of Physics, 2002. http://hdl.handle.net/2237/7003.

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Books on the topic "Metalorganic Vapor Phase Epitaxy (MOVPE)"

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International Conference on Metalorganic Vapor Phase Epitaxy (4th 1988 Hakone, Japan). Metalorganic vapor phase epitaxy 1988: Proceedings of the Fourth International Conference on Metalorganic Vapor Phase Epitaxy, Hakone, Japan, 16-20 May 1988. North-Holland, 1988.

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International Conference on Metalorganic Vapor Phase Epitaxy (8th 1996 Cardiff, Wales, UK). Metalorganic vapor phase epitaxy 1996: Proceedings of the Eighth International Conference on Metalorganic Vapor Phase Epitaxy, Cardiff, Wales, UK, June 9-13, 1996. North-Holland, 1997.

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International Conference on Metalorganic Vapor Phase Epitaxy (6th 1992 Cambridge, Mass.). Metalorganic vapor phase epitaxy 1992: Proceedings of the Sixth International Conference on Metalorganic Vapor Phase Epitaxy, Cambridge, MA, USA, 8-11 June 1992. North-Holland, 1992.

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International Conference on Metalorganic Vapor Phase Epitaxy (7th 1994 Yokohama, Japan). Metalorganic vapor phase epitaxy 1994: Proceedings of the Seventh International Conference on Metalorganic Vapor Phase Epitaxy, Yokohama, Japan, 31 May-3 June 1994. North-Holland, 1994.

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International, Conference on Metalorganic Vapor Phase Epitaxy (3rd 1986 Universal City Calif ). Metalorganic vapor phase epitaxy 1986: Proceedings of the Third International Conference on Metalorganic Vapor Phase Epitaxy, Universal City, CA, USA, 13-17 April 1986. North-Holland, 1986.

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International Conference on Metalorganic Vapour Phase Epitaxy (9th 1998 La Jolla, Calif.). Metalorganic vapor phase epitaxy 1998: Proceedings of the ninth International Conference on Metalorganic Vapour Phase Epitaxy, La Jolla, California, USA, May 31-June 4, 1998. North-Holland, 1998.

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International Conference on Metalorganic Vapor Phase Epitaxy (5th 1990 Aachen, Germany). Metalorganic vapor phase epitaxy 1990: Proceedings of the Fifth International Conference on Metalorganic Vapor Phase Epitaxy and Workshop on MOMBE, CBE, GSMBE, and Related Techniques, Aachen, Germany, 18-22 June 1990. North-Holland, 1991.

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International Conference on Metalorganic Vapor Phase Epitaxy (10th 2000 Sapporo, Japan). ICMOVPE-X: Proceedings of the Tenth International Conference on Metalorganic Vapor Phase Epitaxy, Sapporo, Japan, 5-9 June 2000. Elsevier, 2000.

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International Conference on Metalorganic Vapor Phase Epitaxy (10th 2000 Sapporo, Japan). ICMOVPE-X: Proceedings of the Tenth International Conference on Metalorganic Vapor Phase Epitaxy, Sapporo, Japan, 5-9 June 2000. Elsevier, 2000.

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International Conference on Metalorganic Vapor Phase Epitaxy (6th 1992 Cambridge, Mass.). Metalorganic vapor phase epitaxy: Sixth international conference, June 8-11, 1992, Hyatt Regency Cambridge, Cambridge, Massachusetts : conference digest. Institute of Electrical and Electronics Engineers, 1992.

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Book chapters on the topic "Metalorganic Vapor Phase Epitaxy (MOVPE)"

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Koleske, Daniel D. "III-Nitride Metalorganic Vapor-Phase Epitaxy." In Handbook of GaN Semiconductor Materials and Devices. CRC Press, 2017. http://dx.doi.org/10.1201/9781315152011-6.

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Maxey, C. D. "Metal-Organic Vapor Phase Epitaxy (MOVPE) Growth." In Mercury Cadmium Telluride. John Wiley & Sons, Ltd, 2010. http://dx.doi.org/10.1002/9780470669464.ch6.

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Pohl, Udo W. "Metalorganic Vapor-Phase Epitaxy of Diluted Nitrides and Arsenide Quantum Dots." In Springer Handbook of Crystal Growth. Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-540-74761-1_33.

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Fitouri, Hédi, Ahmed Rebey, and Belgacem El Jani. "Atmospheric-Pressure Metalorganic Vapor Phase Epitaxy of GaAsBi Alloy on GaAs Substrate." In Bismuth-Containing Compounds. Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-8121-8_5.

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Thoan, Nguyen Hoang, Nguyen Trung Do, Tran Thien Duc, and Nguyen Ngoc Trung. "Deep Level Defects in GaN Grown at Low Temperature by Metalorganic Vapor Phase Epitaxy." In Proceedings of the 2nd Annual International Conference on Material, Machines and Methods for Sustainable Development (MMMS2020). Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-69610-8_34.

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Yasuda, T., I. Mitsuishi, T. Koyama, and H. Kukimoto. "Conductivity Control of ZnSe Grown by Metalorganic Vapor Phase Epitaxy and Its Application for Injection Electroluminescence." In Springer Proceedings in Physics. Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-93430-8_73.

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Yoshikawa, Akihiko. "Ar ion laser-assisted metalorganic vapor phase epitaxy of ZnSe." In Wide-Band-Gap Semiconductors. Elsevier, 1993. http://dx.doi.org/10.1016/b978-0-444-81573-6.50009-8.

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Biefeld, Robert M., Daniel D. Koleske, and Jeffrey G. Cederberg. "The Science and Practice of Metal-Organic Vapor Phase Epitaxy (MOVPE)." In Handbook of Crystal Growth. Elsevier, 2015. http://dx.doi.org/10.1016/b978-0-444-63304-0.00003-2.

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Nakanisi, T. "Chapter 3 Metalorganic Vapor Phase Epitaxy for High-Quality Active Layers." In Very High Speed Integrated Circuits: Heterostructure. Elsevier, 1990. http://dx.doi.org/10.1016/s0080-8784(08)60295-1.

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"Growth of High-Quality GaN on Metallic-ZrB2 by Metalorganic Vapor Phase Epitaxy." In Compound Semiconductors 2001. CRC Press, 2002. http://dx.doi.org/10.1201/9781482268980-100.

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Conference papers on the topic "Metalorganic Vapor Phase Epitaxy (MOVPE)"

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"Sixth International Conference Metalorganic Vapor Phase Epitaxy [front matter]." In Sixth International Conference Metalorganic Vapor Phase Epitaxy. IEEE, 1992. http://dx.doi.org/10.1109/movpe.1992.664845.

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Chou, K. C., H. D. Lee, B. Pathangey, T. J. Anderson, and A. Melas. "High Indium Utilization Using Edmi and Teg for Ga/sub 0.5/In/sub 0.5/P Growth by Lp-Movpe." In Sixth International Conference Metalorganic Vapor Phase Epitaxy. IEEE, 1992. http://dx.doi.org/10.1109/movpe.1992.664850.

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"Author's index." In Sixth International Conference Metalorganic Vapor Phase Epitaxy. IEEE, 1992. http://dx.doi.org/10.1109/movpe.1992.665055.

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Nötzel, Richard, Manfred Ramsteiner, Lutz Däweritz, and K. H. Ploog. "Formation and electronic properties of sidewall quantum wires on patterned GaAs (311)A substrates." In Chemistry and Physics of Small-Scale Structures. Optica Publishing Group, 1997. http://dx.doi.org/10.1364/cps.1997.csub.2.

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The natural formation of nanometer-scale structures on high-index semiconductor surfaces during molecular beam epitaxy (MBE) [1] and metalorganic vapor phase epitaxy (MOVPE) [2] has opened a new pathway for the realization of quantum-wire and dot arrays. Even higher flexibility in the formation of nanostructures on high-index semiconductor surfaces can be realized by growth on patterned substrates. Patterning provides an additional degree of freedom for the control of the size and, most important, allows the precise placing of the nanostructures desired for applications in devices.
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Mawst, Luke J., TaeWan Kim, Toby Garrod, et al. "Properties of Dilute-Nitride-Antimonide Materials Grown by Metalorganic Vapor Phase Epitaxy (MOVPE) for Solar Cell Application." In Asia Communications and Photonics Conference. OSA, 2013. http://dx.doi.org/10.1364/acp.2013.aw4k.5.

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Mawst, L. J., T. W. Kim, T. J. Garrod, et al. "Properties of Dilute-Nitride-Antimonide Materials Grown by Metalorganic Vapor Phase Epitaxy (MOVPE) for Solar Cell Application." In Asia Communications and Photonics Conference. OSA, 2013. http://dx.doi.org/10.1364/acpc.2013.aw4k.5.

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Tsai, Chia-Lung, Zhong-Fan Xu, Yu-Sheng Lee, and Gong-Cheng Fan. "Realization of InGaN solar cells with InGaN/GaN superlattice absorption layers by metalorganic vapor phase epitaxy (MOVPE)." In 2011 IEEE 4th International Nanoelectronics Conference (INEC). IEEE, 2011. http://dx.doi.org/10.1109/inec.2011.5991623.

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Rodway, D. C., K. J. Mackey, P. C. Smith, and A. W. Vere. "Laser-assisted Cleaning of GaAs Surfaces Prior to Metalorganic Vapour Phase Epitaxy." In Microphysics of Surfaces, Beams, and Adsorbates. Optica Publishing Group, 1989. http://dx.doi.org/10.1364/msba.1989.wc6.

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Low temperature Metalorganic Vapour Phase Epitaxy (MOVPE) is critically dependent on the correct chemical and physical preparation of the substrate before growth. The major contaminants on GaAs substrate surfaces are oxygen, in the form of native oxides, and carbon. Chemical etching in 5H2SO4: 1H2O2: 1H2O (1) followed by thermal cleaning (annealing at 560-580°C) removes the oxygen but leaves carbon. Other techniques, such as plasma irradiation or ion bombardment (2), remove C and O but may introduce surface damage and change the surface stoichiometry. One technique which is employed for carbon
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Rodway, D. C., K. J. Mackey, P. C. Smith, and A. W. Vere. "Arsenic Passivation of Silicon by Photo-assisted Metalorganic Vapour Phase Epitaxy." In The Microphysics of Surfaces: Beam-Induced Processes. Optica Publishing Group, 1991. http://dx.doi.org/10.1364/msbip.1991.wc2.

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The MOVPE deposition of semiconductors requires effective substrate surface preparation, especially where low temperature, photo-assisted growth is involved. Ideally this process should be achieved in situ in the growth reactor immediately prior to deposition. In a previous paper(1) we reported the in situ removal of carbon from Si and GaAs substrate surfaces using 193nm radiation in a 1 Torr 02 ambient. This process generates a thin oxide which can then be removed by annealing at 850°C, although the process does not always go to completion. To protect the cleaned surface and to passivate the
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Roozeboom, Fred, Andre Sikkema, and Laurens W. Molenkamp. "GaAs-AlGaAs Multiple Quantum Well Structures And High-Power Lasers Grown By Metalorganic Vapor Phase Epitaxy (Movpe) In A Chimney Reactor." In Hague International Symposium, edited by M. J. Adams. SPIE, 1987. http://dx.doi.org/10.1117/12.941181.

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Reports on the topic "Metalorganic Vapor Phase Epitaxy (MOVPE)"

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Ehsani, H., I. Bhat, C. Hitchcock, J. Borrego, and R. Gutmann. Characteristics of GaSb and GaInSb layers grown by metalorganic vapor phase epitaxy. Office of Scientific and Technical Information (OSTI), 1995. http://dx.doi.org/10.2172/350941.

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Ehsani, H., I. Bhat, C. Hitchcock, R. J. Gutmann, G. Charache, and M. Freeman. Tellurium doping of Ga{sub 0.8}In{sub 0.2}Sb layers grown by metalorganic vapor phase epitaxy. Office of Scientific and Technical Information (OSTI), 1998. http://dx.doi.org/10.2172/307974.

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Ehsani, H., I. Bhat, C. Hitchcock, R. Gutmann, G. Charache, and M. Freeman. Growth and characterization of In{sub 0.2}Ga{sub 0.8}Sb device structures using metalorganic vapor phase epitaxy. Office of Scientific and Technical Information (OSTI), 1997. http://dx.doi.org/10.2172/319849.

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Charache, G., and H. Ehsani. P-type GaSb and GaInSb Layers Grown By Metalorganic Vapor Phase Epitaxy Using Silane as the Dopant Source. Office of Scientific and Technical Information (OSTI), 1996. http://dx.doi.org/10.2172/767068.

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Ehsani, H., I. Bhat, C. Gutmann, R. J. Hitchcock, G. Charache, and M. Freeman. Silicon as the P-type dopant in GaSb and Ga{sub 0.8}In{sub 0.2}Sb grown by metalorganic vapor phase epitaxy. Office of Scientific and Technical Information (OSTI), 1998. http://dx.doi.org/10.2172/307975.

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Ehsani, H., I. Bhat, C. Hitchcock, R. J. Gutmann, G. Charache, and M. Freeman. P-type and N-type doping in GaSb and Ga{sub 0.8}In{sub 0.2}Sb layers grown by metalorganic vapor phase epitaxy. Office of Scientific and Technical Information (OSTI), 1998. http://dx.doi.org/10.2172/307980.

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