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Journal articles on the topic 'Metalorganic Vapor Phase Epitaxy (MOVPE)'

Author: Grafiati

Published: 4 June 2021

Last updated: 6 September 2023

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1

Shen, Xu-Qiang, Kazutoshi Kojima, Mitsuaki Shimizu, and Hajime Okumura. "Ammonia-free high temperature metalorganic vapor phase epitaxy (AFHT-MOVPE): a new approach to high quality AlN growth." CrystEngComm 20, no. 45 (2018): 7364–70. http://dx.doi.org/10.1039/c8ce01473f.

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2

Lim, P. H., B. Schineller, O. Schön, K. Heime, and M. Heuken. "Photoluminescence of GaN:Mg grown by metalorganic vapor-phase epitaxy (MOVPE)." Journal of Crystal Growth 205, no. 1-2 (1999): 1–10. http://dx.doi.org/10.1016/s0022-0248(99)00245-6.

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3

Bagaev T. A., Ladugin M. A., Marmalyuk A. A., et al. "3.8 THz quantum cascade laser grown by metalorganic vapor phase epitaxy." Technical Physics Letters 48, no. 5 (2022): 46. http://dx.doi.org/10.21883/tpl.2022.05.53479.19162.

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We have demonstrated a quantum cascade laser (QCL) with a generation frequency of about 3.8 THz, grown by metal-organic vapor phase epitaxy. The multilayer heterostructure for QCLs consists of 185 repetitions of an active module containing four GaAs/Al0.15Ga0.85As quantum wells. The threshold current and threshold voltage of the fabricated QCL were 2.25 kA/cm2 and 19.7 V, respectively. The QCL oscillations were carried out in the multimode regime, and the detection of terahertz radiation continued with an increase in the laser temperature up to 60 K. Keywords: quantum cascade lasers, terahertz

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4

Pohl, Udo W., Kerstin Knorr, Carsten Möller, et al. "Low-Temperature Metalorganic Vapor Phase Epitaxy (MOVPE) of GaN using Tertiarybutylhydrazine." Japanese Journal of Applied Physics 38, Part 2, No. 2A (1999): L105—L107. http://dx.doi.org/10.1143/jjap.38.l105.

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5

Amano, Hiroshi, Masataka Imura, Motoaki Iwaya, Satoshi Kamiyama, and Isamu Akasaki. "AlN and AlGaN by MOVPE for UV Light Emitting Devices." Materials Science Forum 590 (August 2008): 175–210. http://dx.doi.org/10.4028/www.scientific.net/msf.590.175.

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The fundamental growth issues of AlN and AlGaN on sapphire and SiC using metalorganic vapor phase epitaxy, particularly the growth of AlN and AlGaN on a groove-patterned template are reviewed. In addition, the conductivity control of AlGaN is shown. The conductivity control of p-type AlGaN, particularly the realization of a high hole concentration, is essential for realizing high-efficiency UV and DUV LEDs and LDs.

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6

Анисимов, А. Н., А. А. Вольфсон та Е. Н. Мохов. "Спектры рамановского рассеяния толстых эпитаксиальных слоев GaN на SiC, полученных сублимационным сандвич-методом". Физика и техника полупроводников 52, № 9 (2018): 1104. http://dx.doi.org/10.21883/ftp.2018.09.46283.8845.

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AbstractThe Raman spectra of thick (~100 μm and more) GaN layers grown on crystalline SiC substrates by the sublimation sandwich method are studied. Good agreement between the spectra of the SiC substrates used in the study and published data indicates that the measurements made in the study are reliable. The minimum difference between the results of the measurements and published evidence for GaN layers means that the layers grown by the sublimation sandwich method in the study compare well with those fabricated by the metalorganic vapor phase epitaxy (MOVPE) or chloride-hydride vapor phase e

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7

Zhang, R., L. Zhang, D. M. Hansen, et al. "Epitaxial Lateral Overgrowth of GaN with Chloride-Based Growth Chemistries in Both Hydride and Metalorganic Vapor Phase Epitaxy." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 465–70. http://dx.doi.org/10.1557/s1092578300002908.

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Epitaxial lateral overgrowth (ELO) of GaN on SiO2-masked (0001) GaN substrates has been investigated by using chloride-based growth chemistries via hydride vapor phase epitaxy (HVPE) and metal organic vapor phase epitaxy (MOVPE). Diethyl gallium chloride, (C2H5)2GaCl, was used in as the MOVPE Ga precursor. The lateral and vertical growth rates as well as the overgrowth morphology of ELO GaN structures are dependent on growth temperature, V/III ratio and the in-plane orientation of the mask opening. A high growth temperature and low V/III ratio increase the lateral growth rate and produce ELO s

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8

Roth, A. P., D. Beckett, V. S. Sundaram, and R. Yakimova. "Propriétés électriques de l'arséniure de gallium dopé à l'étain, déposé par épitaxie en phase vapeur à partir d'organometalliques." Canadian Journal of Physics 63, no. 6 (1985): 670–74. http://dx.doi.org/10.1139/p85-103.

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The carrier mobility has been measured between 10 and 300 K in epitaxial layers of Sn-doped GaAs grown by metalorganic vapor-phase epitaxy (MOVPE). Experimental and calculated values are compared to obtain the compensation ratios. It is shown that above 77 K the experimental mobility can be calculated in a satisfactory way only by including scattering by localized potential centers.

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9

Hofmann, L., A. Knauer, I. Rechenberg, and M. Weyers. "Overgrowth of trenches with (AlGa)As using metalorganic vapor-phase epitaxy (MOVPE)." Journal of Crystal Growth 195, no. 1-4 (1998): 485–89. http://dx.doi.org/10.1016/s0022-0248(98)00575-2.

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10

Kim, T. W., T. J. Garrod, L. J. Mawst, et al. "Characteristics of bulk InGaAsSbN/GaAs grown by metalorganic vapor phase epitaxy (MOVPE)." Journal of Crystal Growth 370 (May 2013): 163–67. http://dx.doi.org/10.1016/j.jcrysgro.2012.06.043.

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11

Kawaguchi, Yasutoshi, Shingo Nambu, Hiroki Sone, et al. "Selective Area Growth (SAG) and Epitaxial Lateral Overgrowth (ELO) of GaN using Tungsten Mask." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 441–46. http://dx.doi.org/10.1557/s1092578300002866.

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Selective area growth (SAG) and epitaxial lateral overgrowth (ELO) of GaN using tungsten (W) mask by metalorganic vapor phase epitaxy (MOVPE) and hydride vapor phase epitaxy (HVPE) have been studied. The selectivity of the GaN growth on the W mask as well as the SiO2 mask is excellent for both MOVPE and HVPE. The ELO-GaN layers are successfully obtained by HVPE on the stripe patterns along the <1 00> crystal axis with the W mask as well as the SiO2 mask. There are no voids between the SiO2 mask and the overgrown GaN layer, while there are triangular voids between the W mask and the overg

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12

Korotkov, R. Y., and B. W. Wessels. "Electrical Properties of Oxygen Doped GaN Grown by Metalorganic Vapor Phase Epitaxy." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 301–7. http://dx.doi.org/10.1557/s1092578300004427.

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Deliberate oxygen doping of GaN grown by MOVPE has been studied. The electron concentration increased as the square root of the oxygen partial pressure. Oxygen is a shallow donor with a thermal ionization energy of 27 ±2 meV. A compensation ratio of Θ = 0.3-0.4 was determined from Hall effect measurements. The formation energy of ON of EF = 1.3 eV, determined from the experimental data, is lower than the theoretically predicted value.

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13

Lakner, H., B. Bollig, E. Kubalek, et al. "Scanning transmission electron microscopy of heterointerfaces grown by metalorganic vapor phase epitaxy (MOVPE)." Journal of Crystal Growth 107, no. 1-4 (1991): 452–57. http://dx.doi.org/10.1016/0022-0248(91)90502-v.

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14

Wang, W. J., K. Sugita, Y. Nagai, Y. Houchin, A. Hashimoto, and A. Yamamoto. "High-resolution X-ray diffraction analysis of InN films grown by metalorganic vapor phase epitaxy." Powder Diffraction 22, no. 3 (2007): 219–22. http://dx.doi.org/10.1154/1.2756061.

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The growth temperature dependence of the InN film’s crystalline quality is reported. InN films are grown on sapphire substrates from 570 to 650 °C with low-temperature GaN buffers by metalorganic vapor phase epitaxy (MOVPE). The X-ray rocking curves and reciprocal space mappings of the symmetric reflection (0 0 0 2) and asymmetric reflection (1 0 1 2) are measured with high resolution X-ray diffraction. The results indicate that the crystallinity is sensitive to the growth temperature for MOVPE InN. At growth temperature 580 °C, highly crystalline InN film has been obtained, for which the full

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15

Li, P., S. J. Chua, M. Hao, et al. "The Formation of in-rich Regions at The Perphery of The Inverted Hexahonal Pits of InGaN thin-films Grown by Metalorganic Vapor Phase Epitaxy." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 675–81. http://dx.doi.org/10.1557/s1092578300004920.

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InGaN thin films were grown by low-pressure metalorganic-vapor-phase-epitaxy (MOVPE) and characterized by cathodoluminescence (CL) and scanning electron microscopy (SEM). SEM images showed that InGaN samples have inverted hexagonal pits which are formed by the In segregation on the (1011) surfaces. Room temperature CL at the wavelengths corresponding to the GaN band edge, the In-poor and In-rich regions showed that the In–rich regions formed at the periphery of the hexagonal pits.

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16

Szyszka, Adam, Michał Obłąk, Tomasz Szymański, Mateusz Wośko, Wojciech Dawidowski, and Regina Paszkiewicz. "Scanning capacitance microscopy characterization of AIIIBV epitaxial layers." Materials Science-Poland 34, no. 4 (2016): 845–50. http://dx.doi.org/10.1515/msp-2016-0104.

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AbstractThe applicability of scanning capacitance microscopy (SCM) technique for chosen electrical properties characterization of AIIIBV structures fabricated by Metalorganic Vapor Phase Epitaxy (MOVPE) was examined. The calibration curves for quantitative characterization of doping levels in GaAs layers were created. The AlGaN/GaN/Si heterostructures for high electron mobility transistor fabrication and InGaAs tunnel junction for tandem solar cell characterization were presented. The crucial factors of measurement conditions which could influence the obtained results were also discussed.

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17

Chou, Ta-Shun, Saud Bin Anooz, Raimund Grüneberg та ін. "Si doping mechanism in MOVPE-grown (100) β-Ga₂O₃ films". Applied Physics Letters 121, № 3 (2022): 032103. http://dx.doi.org/10.1063/5.0096846.

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A Langmuir adsorption model of the Si incorporation mechanism into metalorganic vapor-phase epitaxy grown (100) β-Ga2O3 thin films is proposed in terms of the competitive surface adsorption process between Si and Ga atoms. The outcome of the model can describe the major feature of the doping process and indicate a growth rate-dependent doping behavior, which is validated experimentally and further generalized to different growth conditions and different substrate orientations.

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18

Thomson, D. B., T. Gehrke, K. J. Linthicum, P. Rajagopal, and R. F. Davis. "Ranges of Deposition Temperatures Applicable for Metalorganic Vapor Phase Epitaxy of Gan Films Via the Technique of Pendeo-Epitaxy." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 269–74. http://dx.doi.org/10.1557/s109257830000257x.

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Pendeo-epitaxy is a type of selective growth of thin films from the sidewalls of etched forms. The resulting films are suspended from the sidewalls and do not interface with the substrate. This process route has advantages over conventional lateral epitaxial overgrowth (LEO) techniques. In this research, pendeo-epitaxial growth of GaN films has been achieved on elongated GaN seed columns. The seed columns were etched from GaN grown on 6H-SiC (0001) substrates via metalorganic vapor phase epitaxy (MOVPE). Silicon nitride mask layers atop the GaN seed columns forced growth from the sidewalls. Pe

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19

KOZLOVSKY, V. I., V. Yu BONDAREV, D. A. SANNIKOV, et al. "E-BEAM PUMPED VCSEL ON MOVPE-GROWN HEXAGONAL CdSSe/CdS MQW STRUCTURE." International Journal of Nanoscience 03, no. 01n02 (2004): 213–21. http://dx.doi.org/10.1142/s0219581x04002000.

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The first electron-beam pumped VCSEL was fabricated on CdSSe / CdS MQW structure grown by metalorganic vapor phase epitaxy on CdS substrate misoriented by 12–16° from (0001) towards (1010). Substrate misorientation results in more perfect surface morphology and intense cathodoluminesence. Lasing in the 535–590 nm spectral range was achieved at room temperature with different VCSELs. The laser power maximum of one VCSEL was as high as 2 W at RT, with electron energy 50 keV and current 1.7 mA. The threshold current was lower than that for the bulk CdSSe laser although the heterostructure used in

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20

Miccoli, Ilio, Paola Prete, and Nico Lovergine. "Mass-transport driven growth dynamics of AlGaAs shells deposited around dense GaAs nanowires by metalorganic vapor phase epitaxy." CrystEngComm 17, no. 31 (2015): 5998–6005. http://dx.doi.org/10.1039/c5ce00980d.

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The MOVPE growth dynamics of AlGaAs shell material around ensembles of free-standing GaAs nanowires is presented and described by a model based on the vapor mass-transport of group-III species and the nanowires relevant size (diameter, height) and density.

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21

Hayashida, Kazuki, Tooru Tanaka, Mitsuhiro Nishio, et al. "Photoluminescence spectra of arsenic-doped ZnTe films grown by metalorganic vapor phase epitaxy (MOVPE) using triethylarsine." Journal of Crystal Growth 237-239 (April 2002): 1580–84. http://dx.doi.org/10.1016/s0022-0248(01)02378-8.

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22

Timò, Gianluca, Marco Calicchio, Giovanni Abagnale, et al. "Study of the Cross-Influence between III-V and IV Elements Deposited in the Same MOVPE Growth Chamber." Materials 14, no. 5 (2021): 1066. http://dx.doi.org/10.3390/ma14051066.

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We have deposited Ge, SiGe, SiGeSn, AlAs, GaAs, InGaP and InGaAs based structures in the same metalorganic vapor phase epitaxy (MOVPE) growth chamber, in order to study the effect of the cross influence between groups IV and III-V elements on the growth rate, background doping and morphology. It is shown that by adopting an innovative design of the MOVPE growth chamber and proper growth condition, the IV elements growth rate penalization due to As “carry over” can be eliminated and the background doping level in both IV and III-V semiconductors can be drastically reduced. In the temperature ra

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23

ZHUANG, QINQIN, JUNYONG KANG, SHUPING LI, and WEI LIN. "SURFACTANT EFFECT OF In ON THE MOVPE GROWTH OF Al- AND N-POLAR AlN." Surface Review and Letters 24, no. 06 (2016): 1750081. http://dx.doi.org/10.1142/s0218625x17500810.

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Al- and N-polar AlN have been grown by metalorganic vapor phase epitaxy (MOVPE) with the assistance of In dopant and characterized by in situ interferometry, ellipsometry, scanning electron microscopy, atomic force microscopy, and X-ray diffractometry. The growth of Al-polar AlN is faster with smoother surfaces than the N-polar ones, which is explained by theoretical calculations. The surfactant effect of In is confirmed by improving the growth rate and surface flatness without getting into the epilayer. Additionally, In is also favorable for reducing the density of dislocations and improving

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24

Miyake, Hideto, Motoo Yamaguchi, Masahiro Haino, et al. "Fabrication of GaN with Buried Tungsten (W) Structures Using Epitaxial Lateral Overgrowth (ELO) via LP-MOVPE." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 62–68. http://dx.doi.org/10.1557/s1092578300004087.

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A buried tungsten (W) mask structure with GaN is successfully obtained by epitaxial lateral overgrowth (ELO) technique via low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The selectivity of GaN growth on the window region vs. the mask region is good. An underlying GaN with a striped W metal mask is easily decomposed above 500 °C by the W catalytic effect, by which radical hydrogen is reacted with GaN. It is difficult to bury the W mask because severe damage occurs in the GaN epilayer under the mask. It is found that an underlying AlGaN/GaN layer with a narrow W stripe mask width (mas

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25

Zhu, Jane G., D. J. Friedman, M. M. Al-Jassim, and J. M. Olson. "A study of ordered domains in Ga0.5In0.5P Grown by MOVPE." Proceedings, annual meeting, Electron Microscopy Society of America 51 (August 1, 1993): 812–13. http://dx.doi.org/10.1017/s0424820100149891.

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Atomic ordering in III-V alloys is known to influence the physical properties of these materials. Therefore, the understanding and the control of the formation of ordered alloys are very important. Ordering in Ga0.5In0.5P, which is lattice matched to GaAs, occurs on two out of four {111} planes, i.e., . The substrate orientation can affect the selection between the two ordered variants. Studies on atomic ordering in III-V alloys have been carried out during the past several years.Transmission electron microscopy (TEM) and selected-area diffraction have been used in this study to investigate th

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26

Tadatomo, Kazuyuki, Yoichiro Ohuchi, Hiroaki Okagawa, Hirotaka Itoh, Hideto Miyake, and Kazumasa Hiramatsu. "Hydrogen and Nitrogen Ambient Effects on Epitaxial Lateral Overgrowth (ELO) of GaN VIA Metalorganic Vapor-Phase Epitaxy (Movpe)." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 118–23. http://dx.doi.org/10.1557/s1092578300002325.

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Ambient gas effect on the epitaxial lateral overgrowth (ELO) of GaN via metalorganic vapor-phase epitaxy (MOVPE) on a MOVPE-grown GaN (0001) / sapphire (0001) substrate with a SiO2 stripe mask has been studied by means of field-emission scanning electron microscopy (SEM) and highresolution X-ray diffraction (XRD) analysis. Different ambient gases of nitrogen, hydrogen and their mixture (mixture ratio, hydrogen : nitrogen = 1 : 1) affect the lateral overgrowth rate, the surface morphology and the crystalline tilting of ELO-GaN layers. XRD revealed that the ELO-GaN layer on the SiO2 mask aligned

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27

Svrcek, Vladimir, Marek Kolenda, Arunas Kadys, et al. "Significant Carrier Extraction Enhancement at the Interface of an InN/p-GaN Heterojunction under Reverse Bias Voltage." Nanomaterials 8, no. 12 (2018): 1039. http://dx.doi.org/10.3390/nano8121039.

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In this paper, a superior-quality InN/p-GaN interface grown using pulsed metalorganic vapor-phase epitaxy (MOVPE) is demonstrated. The InN/p-GaN heterojunction interface based on high-quality InN (electron concentration 5.19 × 1018 cm−3 and mobility 980 cm2/(V s)) showed good rectifying behavior. The heterojunction depletion region width was estimated to be 22.8 nm and showed the ability for charge carrier extraction without external electrical field (unbiased). Under reverse bias, the external quantum efficiency (EQE) in the blue spectral region (300–550 nm) can be enhanced significantly and

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28

Fujita, Shizuo, Mitsuru Funato, Doo-Cheol Park, Yoshifumi Ikenaga, and Shigeo Fujita. "Electrical Characterization of MOVPE-Grown P-Type GaN:Mg Against Annealing Temperature." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 665–70. http://dx.doi.org/10.1557/s1092578300003227.

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Hall effect measurements have been applied for the electrical characterization of p-type Mg-doped GaN grown by metalorganic vapor-phase epitaxy on sapphire substrates in terms of annealing temperature for dehydrogenation (N2 annealing) and hydrogenation (H2 annealing) of the acceptors. With the N2 annealing temperature from 600 to 900 °C for dehydrogenation, both hole concentration and mobility increases, showing more activation of acceptors and less incorporation of unfavorable scattering centers probably originating from Mg-H bondings. The N2 annealing at higher than the growth temperature r

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29

Ladugin, Maxim A., Irina V. Yarotskaya, Timur A. Bagaev, et al. "Advanced AlGaAs/GaAs Heterostructures Grown by MOVPE." Crystals 9, no. 6 (2019): 305. http://dx.doi.org/10.3390/cryst9060305.

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AlGaAs/GaAs heterostructures are the base of many semiconductor devices. The fabrication of new types of devices demands heterostructures with special features, such as large total thickness (~20 μm), ultrathin layers (~1 nm), high repeatability (up to 1000 periods) and uniformity, for which a conventional approach of growing such heterostructures is insufficient and the development of new growth procedures is needed. This article summarizes our work on the metalorganic vapour-phase epitaxy (MOVPE) growth of AlGaAs/GaAs heterostructures for modern infrared devices. The growth approaches presen

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30

Protzmann, H., F. Höhnsdorf, Z. Spika, et al. "Properties of (Ga0.47In0.53)As epitaxial layers grown by metalorganic vapor phase epitaxy (MOVPE) using alternative arsenic precursors." Journal of Crystal Growth 170, no. 1-4 (1997): 155–60. http://dx.doi.org/10.1016/s0022-0248(96)00640-9.

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31

Chang, J. R., Y. K. Su, D. H. Jaw, H. P. Shiao, and W. Lin. "Metalorganic vapor phase epitaxy (MOVPE) growth and characterization of AlInAsSb and AlInAsSb/InGaAs multiple-quantum-well structures." Journal of Crystal Growth 203, no. 4 (1999): 481–85. http://dx.doi.org/10.1016/s0022-0248(99)00114-1.

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32

BONDAREV, V. Yu, V. I. KOZLOVSKY, A. B. KRYSA, J. S. ROBERTS, and Ya K. SKASYRSKY. "SCANNING E-BEAM LONGITUDINALLY PUMPED RT OPERABLE LASER BASED ON MOVPE-GROWN GaInP/AlGaInP MQW STRUCTURE." International Journal of Nanoscience 03, no. 01n02 (2004): 193–201. http://dx.doi.org/10.1142/s0219581x04001985.

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The 17- and 25-period Ga 0.5 In 0.5 P /( Al 0.7 Ga 0.3)0.5 In 0.5 P quantum well structures were grown by metalorganic vapor phase epitaxy on a GaAs substrate misoriented by 10° from (001) to (111)A. A microcavity with dielectric oxide mirrors was fabricated on the basis of each structure. Lasing at 619 nm (632 nm) with 0.7 W (6 W) output power was achieved under scanning electron beam longitudinal pumping at room temperature using the 17-period (25-period) structure. The threshold current density at a 40 keV electron energy was 8 A/cm 2. It is shown that low threshold and high power lasing re

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33

Chou, Ta-Shun, Saud Bin Anooz, Raimund Grüneberg та ін. "Toward Precise n-Type Doping Control in MOVPE-Grown β-Ga2O3 Thin Films by Deep-Learning Approach". Crystals 12, № 1 (2021): 8. http://dx.doi.org/10.3390/cryst12010008.

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In this work, we train a hybrid deep-learning model (fDNN, Forest Deep Neural Network) to predict the doping level measured from the Hall Effect measurement at room temperature and to investigate the doping behavior of Si dopant in both (100) and (010) β-Ga2O3 thin film grown by the metalorganic vapor phase epitaxy (MOVPE). The model reveals that a hidden parameter, the Si supplied per nm (mol/nm), has a dominant influence on the doping process compared with other process parameters. An empirical relation is concluded from this model to estimate the doping level of the grown film with the Si s

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34

Duan, Shukun, and Dacheng Lu. "Quasi-Thermodynamic Analysis of Metalorganic Vapor Phase Epitaxy of GaN." MRS Proceedings 468 (1997). http://dx.doi.org/10.1557/proc-468-81.

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ABSTRACTA thermodynamic analysis of GaN grown by MOVPE has been proposed based on quasi-thermodynamic equilibrium established on the solid-vapor interface. Phase diagrams for the MOVPE growth of GaN using TEGa and NH3 has been calculated. The phase diagram is consists of four phases regions: the region for single condensed phase of GaN, the region for double condensed phase of GaN (s) +Ga(l), the etching region with Ga droplets and the etching region without Ga droplets. The effect of growth temperature, reactor pressure, content of carrier gas, deposition ratio of NH3 and V/III ratio upon gro

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35

Scholz, F., J. Weber, K. Pressel, and A. Dörnen. "Movpe of Rare Earth Doped III-V Semiconductors." MRS Proceedings 301 (1993). http://dx.doi.org/10.1557/proc-301-3.

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ABSTRACTDifferent III-V compound semiconductors have been doped with the rare earth (RE) elements Yb, Er, and Tm using atmospheric pressure metalorganic vapor phase epitaxy. Best results have been obtained using the novel metalorganic compounds tris-isopropyl-cyclopentadienyl-RE as precursors which have an acceptable vapor pressure and can be used as liquids at bubbler temperatures of 60°-90°C. Only Yb has been found to occupy a regular lattice site in InP, whereas the other RE show complex optical spectra because of their incorporation in form of different centers and clusters.

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36

Iwai, Sohachi, Takashi Meguro, Yoshinobu Aoyagi, and Susumu Namba. "Patterned Crystal Growth of GaAs by Laser Assisted Atomic Layer Epitaxy." MRS Proceedings 129 (1988). http://dx.doi.org/10.1557/proc-129-171.

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ABSTRACTAtomic layer epitaxy (ALE) of GaAs is achieved by metalorganic vapor phase epitaxy (MOVPE) under irradiation by Ar ion laser. The self-limiting mechanism for gallium deposition at one atomic layer on an arsenic atomic surface is realized by the site-selective decomposition of triethylgallium on the arsenic surface. A patterned growth of ALE is obtained by scanning a laser beam on a substrate.

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37

"5th International conference on metalorganic vapor phase epitaxy (IC-MOVPE 5)." Journal of Crystal Growth 98, no. 4 (1989): 867. http://dx.doi.org/10.1016/0022-0248(89)90332-1.

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38

Fujii, Takuya, Mitsuru Ekawa, and Toshiyuki Tanahashi. "Growth Rate Enhancement in Selective Area Movpe." MRS Proceedings 417 (1995). http://dx.doi.org/10.1557/proc-417-193.

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AbstractWe investigated the growth rate enhancement in selective area metalorganic vapor phase epitaxy with a new surface boundary condition for the vapor phase concentration of source materials. In our model, the growth rate is proportional to the vapor phase concentration at a distance of the vapor phase mean-free path of source materials from the substrates, and the vapor phase concentration is laterally uniform at the top of the stagnant layer. This model predicts that the growth rate modulation produced by mask-patterning disappears at a specific pressure at which the vapor phase mean-fre

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Geurts, J., J. Finders, H. Münder, et al. "Raman Study of MOMBE and Plasma-MOVPE Grown III-V Layers on Si(100)." MRS Proceedings 160 (1989). http://dx.doi.org/10.1557/proc-160-499.

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AbstractThe crystalline quality of the transition region between buffer layer and epilayer in MOMBE (metalorganic molecular beam epitaxy) and plasma-MOVPE (metalorganic vapour phase epitaxy) grown GaAs layers on Si(100) is analysed by Raman scattering with variation of the penetration depth and besides bevel polishing or step etching. The region with considerable lattice imperfections is essentially confined to the original buffer layer.

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Zhang, R., L. Zhang, D. M. Hansen, et al. "Epitaxial Lateral Overgrowth of GaN with Chloride-Based Growth Chemistries in Both Hydride and Metalorganic Vapor Phase Epitaxy." MRS Proceedings 537 (1998). http://dx.doi.org/10.1557/proc-537-g4.7.

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AbstractEpitaxial lateral overgrowth (ELO) of GaN on SiO2-masked (0001) GaN substrates has been investigated by using chloride-based growth chemistries via hydride vapor phase epitaxy (HVPE) and metal organic vapor phase epitaxy (MOVPE). Diethyl gallium chloride, (C2H5)2GaCl, was used in as the MOVPE Ga precursor. The lateral and vertical growth rates as well as the overgrowth morphology of ELO GaN structures are dependent on growth temperature, V/III ratio and the in-plane orientation of the mask opening. A high growth temperature and low V/III ratio increase the lateral growth rate and produ

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Deiter, Steffi, Helvi Witek, Nikolay Oleynik, Jürgen Bläsing, Armin Dadgar, and Alois Krost. "High resolution X-ray diffraction of MOVPE-grown ZnO/GaN/sapphire layers." Zeitschrift für Kristallographie - Crystalline Materials 219, no. 4 (2004). http://dx.doi.org/10.1524/zkri.219.4.187.30445.

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AbstractHigh quality ZnO is an interesting material for electronic and optoelectronic applications. It belongs to the wide gap semiconductors (bandgap = 3.3 eV). In this paper we present ZnO layers grown by MOVPE (metalorganic vapor phase epitaxy). Several growth parameters like growth temperature and thickness of the layer were varied. For comprehensive investigations of the crystalline quality we employed different X-ray fine structure methods.

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Hacke, P., H. Miyoshi, K. Hiramatsu, H. Okumura, S. Yoshida, and H. Okushi. "Observation of Midgap States in GaN with Optical-Isothermal Capacitance Transient Spectroscopy." MRS Proceedings 449 (1996). http://dx.doi.org/10.1557/proc-449-549.

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ABSTRACTOptical-isothermal capacitance transient spectroscopy (O-ICTS) was used to distinguish the deep levels which occur in unintentionally doped n-type GaN by means of their characteristic optical cross section. GaN grown by metalorganic vapor phase epitaxy (MOVPE) and hydride vapor phase epitaxy (HVPE) were compared. Correspondence between optical and thermal emission characteristics of previously discovered levels, E2 (∼Ec-0.55 eV) and E4 (∼EC-1.0 eV), were clearly determined by observing their sequential appearance in the ICTS spectra. Whether by thermal or optical stimulation, the emiss

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Sarigiannis, D., J. D. Peck, T. J. Mountziaris, G. Kioseoglou, and A. Petrou. "Vapor Phase Synthesis of II-IV Semiconductor Nanoparticles in a Counterflow Jet Reactor." MRS Proceedings 616 (2000). http://dx.doi.org/10.1557/proc-616-41.

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AbstractThe vapor-phase synthesis of polycrystalline ZnSe nanoparticles is reported. The particles were grown at room temperature and at a pressure of 125 torr in a counterflow jet reactor and were collected by impact on a Si watler. The precursors used in this study were vapors of (CH3)2Zn:[N(C2H5)3)]2 and H2Se gas diluted in hydrogen. These precursors have been used in the past for Metalorganic Vapor Phase Epitaxy (MOVPE) of ZnSe thin films. The particles were characterized by Transmission Electron Microscopy (TEM). electron diffraction. and Raman spectroscopy. The reactor was operated in a

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Kawaguchi, Yasutoshi, Shingo Nambu, Hiroki Sone, et al. "Selective Area Growth (SAG) and Epitaxial Lateral Overgrowth (Elo) of GaN Using Tungsten Mask." MRS Proceedings 537 (1998). http://dx.doi.org/10.1557/proc-537-g4.1.

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AbstractSelective area growth (SAG) and epitaxial lateral overgrowth (ELO) of GaN using tungsten (W) mask by metalorganic vapor phase epitaxy (MOVPE) and hydride vapor phase epitaxy (HVPE) have been studied. The selectivity of the GaN growth on the W mask as well as the SiO2 mask is excellent for both MOVPE and HVPE. The ELO-GaN layers are successfully obtained by HVPE on the stripe patterns along the <1100> crystal axis with the W mask as well as the SiO2 mask. There are no voids between the SiO2 mask and the overgrown GaN layer, while there are triangular voids between the W mask and t

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Pawlowski, R. P., C. Theodoropoulos, T. J. Mountziaris, H. K. Moffat, J. Han, and E. J. Thrush. "Optimal Design of Reactors for Metalorganic Vapor Phase Epitaxy of Group III Nitrides." MRS Proceedings 616 (2000). http://dx.doi.org/10.1557/proc-616-159.

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AbstractMetalorganic Vapor Phase Epitaxy (MOVPE) has emerged as the technique of choice for growing thin films and structures of group III-nitrides. The objective of this work is to address the optimal design of vertical rotating disk and stagnation flow MOVPE reactors in order to achieve film thickness uniformity over large area substrates. Gas inlets that preserve the axial symmetry and enable alternating feeding of the precursors through coaxial rings were studied. The growth of GaN films from trimethyl-gallium and ammonia was used as a typical example. A fundamental reaction-transport mode

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Safvi, S. A., J. M. Redwing, M. A. Tischler, and T. F. Kuech. "A Modeling Study of GaN Growth by MOVPE." MRS Proceedings 395 (1995). http://dx.doi.org/10.1557/proc-395-255.

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ABSTRACTA model for the growth of gallium nitride in a vertical metalorganic vapor phase epitaxy reactor is presented. For a mixture of non-dilute gases, the flow temperature and concentration profiles are predicted. The results show that the growth of GaN epilayers is through an intermediate adduct of TMG and ammonia. Growth rates are predicted based on simple reaction mechanisms and compared with those obtained experimentally. Loss of adduct species due to polymerization leads to lowering in growth rate. An attempt to quantify loss of reacting species is made based on experimentally observed

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Sohmer, A., J. Off, H. Bolay, et al. "GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy." MRS Internet Journal of Nitride Semiconductor Research 2 (1997). http://dx.doi.org/10.1557/s109257830000140x.

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The dependence of the In-incorporation efficiency and the optical properties of MOVPE-grown GaInN/GaN-heterostructures on various growth parameters has been investigated. A significant improvement of the In-incorporation rate could be obtained by increasing the growth rate and reducing the H2-partial pressure in the MOVPE reactor. However, GaInN layers with a high In-content typically show an additional low energy photoluminescence peak, whose distance to the band-edge increases with increasing In-content. For GaInN/GaN quantum wells with an In-content of approximately 12%, an increase of the

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MIYAGAKI, S., S. Ohkubo, K. Takai, et al. "Crystal Quality and Surface Morphology Improvement of Movpe-Grown GaAs-on-Si Using Tertiarybutylarsine." MRS Proceedings 281 (1992). http://dx.doi.org/10.1557/proc-281-345.

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ABSTRACTWe developed GaAs heteroepitaxy on a Si substrate by metalorganic vapor phase epitaxy (MOVPE) using tertiarybutylarsine (TBAs). In buffer layer growth at 450°C, the surface morphology and crystal quality of TBAs-grown films were slightly inferior to those of AsH3-grown films. At buffer layer growth below 400°C, the quality of TBAs-grown films improved. The GaAs films we grew using TBAs had a better quality than those grown using AsH2.

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Korotkov, R. Y., and B. W. Wessels. "Electrical Properties of Oxygen Doped GaN Grown by Metalorganic Vapor Phase Epitaxy." MRS Proceedings 595 (1999). http://dx.doi.org/10.1557/proc-595-f99w3.80.

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AbstractDeliberate oxygen doping of GaN grown by MOVPE has been studied. The electron concentration increased as the square root of the oxygen partial pressure. Oxygen is a shallow donor with a thermal ionization energy of 27 ±2 meV. A compensation ratio of Θ = 0.3-0.4 was determined from Hall effect measurements. The formation energy of ON of EF = 1.3 eV, determined from the experimental data, is lower than the theoretically predicted value.

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Lum, R. M., and J. K. Kiingert. "Comparison of Low Vapor Pressure Organoarsenic Compounds for Movpe Growth of GaAs." MRS Proceedings 144 (1988). http://dx.doi.org/10.1557/proc-144-53.

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ABSTRACTWe have investigated the use of various alkylarsine compounds as alternatives to arsine in the metalorganic vapor phase epitaxy (MOVPE) of GaAs. These As-precursors, which include homologues of methyl, ethyl and butyl-based compounds, are typically low vapor pressure liquids and thus much safer to handle than arsine, which is a toxic high pressure gas. To enable a direct comparison of the alkylarsine and arsine sources, measurement of their growth and thermal decomposition properties were obtained in the same reactor under identical conditions. The composition and purity of the precurs

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