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Dissertations / Theses on the topic 'Metalorganic Vapor Phase Epitaxy (MOVPE)'

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Published: 4 June 2021

Last updated: 6 September 2023

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1

Balmer, Richard. "MOVPE growth and optical monitoring of A1GaN films." Thesis, University of Nottingham, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.289471.

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Cheng, Siu F. "Metalorganic vapor-phase epitaxy of compound semiconductor Alloys." Diss., Restricted to subscribing institutions, 2007. http://proquest.umi.com/pqdweb?did=1495961311&sid=1&Fmt=2&clientId=1564&RQT=309&VName=PQD.

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3

Markurt, Toni. "Transmission electron microscopy investigation of growth and strain relaxation mechanisms in GaN (0001) films grown on silicon (111) substrates." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät, 2016. http://dx.doi.org/10.18452/17405.

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In dieser Arbeit untersuchen wir die grundlegenden Wachstums- und Relaxationsprozesse, die es erlauben den Verzerrungszustand von GaN (0001) beim Wachstum auf Silizium (111) Substraten einzustellen und die resultierende Dichte an Durchstoßversetzungen zu reduzieren. Zu deren Analyse werden GaN (0001) Schichten, die mittels metallorganischer Gasphasenepitaxy abgeschieden worden sind, hauptsächlich mit transmissionselekronenmikroskopischen Methoden untersucht. Die wesentlichen Erkenntnisse der Arbeit sind: (i) Der Aufbau einer kompressiven Verzerrung von GaN (0001) Filmen mittels AlGaN Zwischen

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4

Venkataramani, Rajesh 1972. "Multiscale models of the metalorganic vapor phase epitaxy process." Thesis, Massachusetts Institute of Technology, 2000. http://hdl.handle.net/1721.1/26883.

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Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 2000.<br>Includes bibliographical references.<br>This thesis develops modeling techniques for chemical vapor deposition processes, specifically metalorganic vapor phase epitaxy (MOVPE). The difficulty in creating an overall modeling strategy for the MOVPE process is that important processes occur on a wide range of length and time scales. Gas phase heat and mass transfer affect the flux of species to the surface, while atomic processes affect the morphology of the growing film. In this thesis, new computation

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5

Pérez-Solórzano, Borragán Victoria. "Self-assembled (Al)GaInN quantum dots grown by metalorganic vapor phase epitaxy." Tönning Lübeck Marburg Der Andere Verl, 2008. http://d-nb.info/987860828/04.

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6

Abounadi, Abdelhadi. "Etude des propriétés optiques du semiconducteur ZnS et d'un super-réseau ZnS-ZnSe élaborés par MOVPE [MetalOrganic Chemical Vapor Epitaxy]." Montpellier 2, 1994. http://www.theses.fr/1994MON20134.

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Ce memoire est consacre a l'etude des proprietes optiques du compose semiconducteur zns et d'un super-reseau zns-znse forme de 45 periodes de 33 a de zns et 37a de znse, epitaxiees par movpe. Les mesures experimentales et les calculs theoriques de la reflectivite (par le modele de la dispersion spatiale a deux oscillateurs) permettent de determiner les proprietes des differentes couches fabriquees a differentes temperatures. Ces resultats joints a la mesure des rapports des intensites des pics de photoluminescence montrent que la couche epitaxiee a 300c presente la meilleur qualite optique, co

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7

Vankova, Viera. "Metalorganic vapour phase epitaxial growth and characterisation of Sb-based semiconductors." Thesis, Nelson Mandela Metropolitan University, 2005. http://hdl.handle.net/10948/d1019678.

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This study focuses on the growth and characterization of epitaxial InAs and InAs1-xSbx. Layers are grown on InAs, GaAs and GaSb substrates by metalorganic vapour phase epitaxy, using trimethylindium, trimethylantimony and arsine as precursors. The growth parameters (V/III ratio, Sb vapour phase compositions) are varied in the temperature range from 500 ºC to 700 ºC, in order to study the influence of these parameters on the structural, optical and electrical properties of the materials. The layers were assessed by X-ray diffraction, electron and optical microscopy, photoluminescence and Hall m

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8

Steins, Roger. "New process approaches to metalorganic vapor phase epitaxy of III-nitrides for high power HEMTs." [S.l.] : [s.n.], 2006. http://deposit.ddb.de/cgi-bin/dokserv?idn=983408033.

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9

Funato, Mitsuru. "Control of Interface Properties in ZnSe-GaAs Heterovalent Heterostructures Grown by Metalorganic Vapor Phase Epitaxy." Kyoto University, 1999. http://hdl.handle.net/2433/77935.

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10

Honda, Y., Y. Kuroiwa, M. Yamaguchi, and N. Sawaki. "Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor-phase epitaxy." American Institute of Physics, 2002. http://hdl.handle.net/2237/7003.

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11

Choi, Suk. "Growth and characterization of III-nitride materials for high efficiency optoelectronic devices by metalorganic chemical vapor deposition." Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/45823.

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Efficiency droop is a critical issue for the Group III-nitride based light-emitting diodes (LEDs) to be competitive in the general lighting application. Carrier spill-over have been suggested as an origin of the efficiency droop, and an InAlN electron-blocking layer (EBL) is suggested as a replacement of the conventional AlGaN EBL for improved performance of LED. Optimum growth condition of InAlN layer was developed, and high quality InAlN layer was grown by using metalorganic chemical vapor deposition (MOCVD). A LED structure employing an InAlN EBL was grown and its efficiency droop performa

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12

Rothuizen, Hugo. "Lateral down-scaling and characterization of GaxIn₁-xAs/InP nanostructures fabricated by selective area metalorganic vapor-phase epitaxy /." Lausanne, 1994. http://library.epfl.ch/theses/?nr=1190.

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13

Heilmann, Martin Verfasser], and Gerd [Gutachter] [Leuchs. "Heteroepitaxial Growth of GaN Nanostructures via Metalorganic Vapor Phase Epitaxy on Sapphire and Silicon using Graphene as Buffer Layer / Martin Heilmann ; Gutachter: Gerd Leuchs." Erlangen : Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), 2017. http://d-nb.info/1125715472/34.

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14

Heilmann, Martin [Verfasser], and Gerd [Gutachter] Leuchs. "Heteroepitaxial Growth of GaN Nanostructures via Metalorganic Vapor Phase Epitaxy on Sapphire and Silicon using Graphene as Buffer Layer / Martin Heilmann ; Gutachter: Gerd Leuchs." Erlangen : Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), 2017. http://d-nb.info/1125715472/34.

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15

Reitmeier, Zachary J. "The Chemistry and Surface Microstructure of Si-Based Substrates and their Effect on the Evolution of the Microstructures of III-Nitride Films Grown via Metalorganic Vapor Phase Epitaxy." NCSU, 2005. http://www.lib.ncsu.edu/theses/available/etd-03202005-194018/.

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The present research was undertaken with the goals of understanding the evolution of defects and strain in heteroepitaxial AlN and GaN films deposited via metalorganic vapor phase epitaxy and minimizing those defects through manipulation of the substrate. As observed with atomic force microscopy (AFM), AlN initially grew in the form of flat-topped islands on as-received SiC substrates. Threading dislocations (TDs) observed in transmission electron microscopy (TEM) images initiated at the AlN/SiC interface as the result of defects at the surface of the mechanically polished substrate and/or con

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16

Matsuda, Yoshinobu. "Polar-Plane-Free Faceted InGaN-LEDs toward Highly Radiative Polychromatic Emitters." Doctoral thesis, Kyoto University, 2020. http://hdl.handle.net/2433/253285.

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京都大学<br>0048<br>新制・課程博士<br>博士(工学)<br>甲第22449号<br>工博第4710号<br>新制||工||1736(附属図書館)<br>京都大学大学院工学研究科電子工学専攻<br>(主査)教授川上養一, 教授野田進, 教授山田啓文<br>学位規則第4条第1項該当<br>Doctor of Philosophy (Engineering)<br>Kyoto University<br>DFAM

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17

Döscher, Henning. "Benchmarking surface signals when growing GaP on Si in CVD ambients." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2010. http://dx.doi.org/10.18452/16237.

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Diese Arbeit untersucht das Aufwachsen von dünnen GaP-Schichten auf Si(100)-Oberflächen mittels metallorganischer Gasphasenabscheidung (MOVPE) und die damit verbundene Entstehung von Antiphasendomänen (APDs). Die Vermessung der Si(100)-Substratoberfläche, der III-V/Si(100)-Grenzfläche und der abgeschiedenen GaP-Filme mit oberflächenempfindlichen Messverfahren dient der Etablierung APD-freier III-V-Heteroepitaxie auf Si(100). Die Präparation reiner Si(100)-Oberflächen frei von Sauerstoff in der MOVPE-Umgebung konnte durch Röntgenphotoelektronenspektroskopie (XPS) belegt werden. Vorwiegend doppe

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18

Huang, Chun-Hsin, and 黃俊欣. "GaN on Si (111) Grown by Metalorganic Vapor phase Epitaxy (MOVPE) and Fabrication of Quantum Dot Photodetectors." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/31788935481694689353.

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碩士<br>國立成功大學<br>電機工程學系專班<br>92<br>GaN films were grown on Si(111) substrates by home made MOVPE system using a vertical reactor. The low-temperature AlN buffer layer,30 nm in thickness, was grown on 7000C. The high temperature GaN films were grown at 10600C. XRD observation showed that the films are well oriented hexagonal GaN. But SEM observation showed that there were many cracks and defects in the films. The PL measurement results showed the light response of the films were not clear. 　　We successfully fabricated a novel device: InGaN/GaN multi-quantum dot (MQD) p-n junction photodiodes, an

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19

蔡敬恩. "Low temperature metalorganic vapor phase epitaxy (MOVPE) of GaN-effect of N2H4 based compounds in place of NH3 and strategy of carbon contamination." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/70092550353305791280.

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20

Paul, Shashi. "Growth Of Epilayers Of GaAs And AlxGa1-x As By MOVPE And Their Characterization." Thesis, 1995. http://etd.iisc.ernet.in/handle/2005/2233.

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21

Burgess, Timothy. "From Dopant to Source: The Use of Zinc as an Enabler in the Synthesis of Nanostructures by Metalorganic Vapour Phase Epitaxy." Phd thesis, 2017. http://hdl.handle.net/1885/144611.

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As conventional methods of semiconductor fabrication approach fundamental physical limits, new paradigms are required for progress. One concept with the potential to deliver such a paradigm shift is the bottom-up synthesis of semiconductor nanostructures. Beyond further scaling, bottom-up methods promise novel geometries and heterostructures unavailable by conventional top-down methods. This is particularly true in the case of nanostructure growth by the vapour-liquid-solid (VLS) method. Commonly realised using existing vapour phase epitaxy techniques,

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22

Li-ChiPeng and 彭立琪. "Wide Bandgap III-Nitride-based Optoelectronic Devices Grown by Metalorganic Vapor Phase Epitaxy." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/84978359794927842251.

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博士<br>國立成功大學<br>光電科學與工程學系<br>100<br>In this dissertation, growth and fabrication of III-nitride-based optoelectronic devices by MOVPE have been studied. Several methods used to improve output power efficiency of GaN-based blue light emitting diodes (LEDs) have been studied. GaN-based blue LEDs with textured sidewalls and micro-scale pillars around mesa region could enhance light efficiency about 26% by reducing the total internal reflection of light inside the LED structure. Furthermore, comparison of conventional LEDs, the LEDs combining with textured sidewalls, GaN micro-pillars around the m

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23

Sheu, Jinn-Kong, and 許進恭. "III-Nitride Semiconductors and Blue Light-emitting Diodes Grown by Metalorganic Vapor-phase Epitaxy." Thesis, 1999. http://ndltd.ncl.edu.tw/handle/48440513708267251666.

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博士<br>國立成功大學<br>電機工程學系<br>87<br>Abstract: In this dissertation, We have successfully fabricated the InGaN/GaN double heterostructure( DH ) and multiple quantum well( MQW ) blue light-emitting diodes( LEDs ) grown by metalorganic vapor-phase epitaxy( MOVPE ) technique. To fabricate the high performance LEDs emitted in blue-green region, the problems with the growth of InxGa1-xN films must be overcome. Besides the epitaxial layers growth, the processing technologies, including the formation of transparent p-type ohmic contacts and the dry etching of GaN also play an important role in

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24

Chin-Hsiang, Chen. "III-Nitride Based Semiconductors and Related Optical Electronic Devices Grown by Metalorganic Vapor Phase Epitaxy." 2002. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0022-1409200710323858.

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25

Chen, Chin-Hsiang, and 陳進祥. "III-Nitride Based Semiconductors and Related Optical Electronic Devices Grown by Metalorganic Vapor Phase Epitaxy." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/34374612612237760140.

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博士<br>國立成功大學<br>電機工程學系碩博士班<br>90<br>In this dissertation, the growth and characteristics of the III-V nitrides semiconductor that consist of undoped GaN, n-type GaN, p-type GaN, Si-doped InGaN layers, and InGaN/GaN MQW had been systematically studied. Using MOCVD techniques, the InGaN/GaN MQW green, blue, and yellow LEDs were successfully fabricated. In epitaxial layers growth, we discovered the growth temperature of GaN epitaxial layers strongly influence the optical and electric properties. In addition, it can be seen that the high temperature GaN epitaxial layers grown under 1150℃ had a sma

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26

Hudait, Mantu Kumar. "Metal-organic Vapor-Phase Epitaxy Of GaAs On Polar And Nonpolar Substrates." Thesis, 1999. http://etd.iisc.ernet.in/handle/2005/1672.

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27

Kuo-HuaChang and 張國華. "Selective-area Regrowth Technique Applied to GaN-Based Optoelectronic Devices Grown by Metalorganic Vapor Phase Epitaxy." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/58380002596176621040.

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博士<br>國立成功大學<br>光電科學與工程研究所<br>98<br>In this dissertation, selective-area grown (SAG) techniques performed by metalorganic vapor phase epitaxy (MOVPE) have been demonstrated to grow GaN-based light emitting diodes (LEDs) and AlGaN-based photodiodes (PDs). The SAG GaN and AlxGa1-xN epitaxial layers are grown on GaN template substrates with SiO2 mask layers. The SiO2–masked GaN templates featured different open window ratios were used to understand the growth mechanisms and establish epitaxial parameters. These preliminary tasks are helpful for structure design of devices and growth condition con

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28

Hsiao-ChiuHsu and 徐曉秋. "Investigation of Nonpolar GaN-based Epitaxial Growth and Optoelectronic Devices by Metalorganic Vapor Phase Epitaxy Technique." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/81241071464383077155.

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Ching, Jia, and 林家慶. "The Study of III-Nitride Semiconductors and Related Optoelectronic Devices Grown by Metalorganic Vapor Phase Epitaxy." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/09420053023275268112.

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博士<br>國立成功大學<br>微電子工程研究所碩博士班<br>96<br>In this dissertation, we prepared III-V nitride semiconductor materials and related optoelectronic devices by using metalorganic vapor phase epitaxy. First, the better crystalline quality and less dislocations of GaN epitaxial layers can be achieved by using 1o off-axis c-plane sapphire substrates. It was found that the etching pits density of GaN films on vicinal substrates is as low as 1.2×107 cm-2. From temperature-dependent Hall measurement, it was found that only one activation energy can be found from the GaN epitaxial layers grown on 1° tilted sapph

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Huang, Chuan-I., and 黃全一. "Investigation and Fabrication of AlGaN/GaN and GaN/InGaN HFETs by Metalorganic Vapor Phase Epitaxy system." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/82795760655079615795.

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碩士<br>國立成功大學<br>微電子工程研究所碩博士班<br>92<br>In this thesis, we first compare two different type ohmic contact metals on AlGaN/GaN heterostructure field effect transistors (HFETs) structure grown by metalorganic vapor phase epitaxy (MOVPE) system, and then discuss the device electrical characteristics .With Cr/Al for ohmic contact metals, the best specific contact resistivity we measured is 3.7*10-4Ω-cm2 annealed at 700℃ in N2 ambiance. In DC section, the maximal transconductance (GM) of device is 82.4mS/mm and the maximal drain current (Idmax) is 471mA/mm. For using Ti/Al/Ti/Au as ohmic contact meta

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Cheng, An-Ting, and 鄭安廷. "Structural Development of GaN-Based Materials and Light Emitting Diodes Grown by Metalorganic Vapor Phase Epitaxy Technique." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/32372525846415628540.

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博士<br>國立成功大學<br>微電子工程研究所碩博士班<br>96<br>In this dissertation, the improved properties of GaN-based materials and devices are demonstrated by metalorganic vapor phase epitaxy (MOVPE) technique. To enhance the light intensity of light emitting diode (LED) required for human life, some growth methods are proposed and discussed. The AlInN/GaN superlattices (SLs) growth is demonstrated to significantly reduce the dislocation of AlGaN layers. For enhanced light intensity of near ultraviolet (UV) and violet InGaN/GaN multiple-quantum-wells (MQWs), the AlInN cladding layer structures are used to improve

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32

Khandekar, Anish Arun. "Metalorganic vapor phase epitaxy of III-V heteroepitaxial systems : investigation of structural and chemical effects of lattice strain /." 2006. http://www.library.wisc.edu/databases/connect/dissertations.html.

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33

Kuan, Ta-Ming, and 官大明. "The Study of Nitride-based High Mobility and High Frequency Devices Grown by Metalorganic Vapor Phase Epitaxy System." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/06514649506168785530.

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博士<br>國立成功大學<br>微電子工程研究所碩博士班<br>93<br>In this dissertation, the growth and characterization of nitride-based epilayers have been systematically studied by using in-situ reflectance and ex-situ measurements. We have also successfully fabricated the AlxGa1-xN/GaN 2-dimentional electron gas (2DEG) heterostructure field effect transistors (HFETs), novel GaN/InxGa1-xN 2DEG HFETs and improved AlxGa1-xN/GaN 2DEG HFETs by introducing regrowth technique. 　　For AlxGa1-xN/GaN 2DEG heterostructure field effect transistors (HFETs), a high quality AlGaN/GaN 2DEG heterostructure on a semi-insulating current

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34

Huang, Jeng-Jie, and 黃政傑. "Growths of III-V Nitride Semiconductors with the Techniques of Metalorganic Vapor Phase Deposition and Molecular Beam Epitaxy." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/43946718946711784153.

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博士<br>國立臺灣大學<br>光電工程學研究所<br>99<br>In this dissertation, first pit-free a-plane GaN (11-20) growth on r-plane sapphire (1-102) substrate with metalorganic chemical vapor deposition (MOCVD) is reported. We use the flow-rate modulation epitaxy (FME) technique to improve the crystal quality of an a-plane GaN film. With the FME technique, the width of the rocking curve in X-ray diffraction measurement is significantly reduced. Also, the surface roughness based on either atomic-force-microscopy scanning or a-step profiling is decreased. Here, the FME technique means to alternatively turn on and off

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Ko, Chih-Hsin, and 柯誌欣. "The Study of Nitride-based Materials and Its Related HFETs, Photodetectors, and LEDs Grown by Metalorganic Vapor Phase Epitaxy and Ammonia Molecular Beam Epitaxy." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/11472888477301911680.

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博士<br>國立成功大學<br>電機工程學系碩博士班<br>91<br>In this dissertation, the growth and characterization of GaN epilayers have been systematically studied using in-situ reflectance and ex-situ measurements. We have also successfully fabricated the AlxGa1-xN/GaN 2DEG HFETs, photodetectors, n-down and p-down InxGa1-xN/GaN MQWs LEDs. In epitaxial layers growth, the morphology evolution of the initial low-temperature buffer layer strongly influences the structural and electrical quality of the high-temperature GaN epilayers. Moreover, by changing the nucleation temperatures, one can change the rate of the latera

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Steins, Roger [Verfasser]. "New process approaches to metalorganic vapor phase epitaxy of III-nitrides for high power HEMTs / vorgelegt von Roger Steins." 2006. http://d-nb.info/983408033/34.

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Ya-YuYang and 楊亞諭. "Improved Optoelectronic Characteristics of GaN-Based Devices with Periodic Dielectric Structures and Quantum Well Structure Design by Metalorganic Vapor Phase Epitaxy." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/40852328250448536369.

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博士<br>國立成功大學<br>光電科學與工程學系<br>101<br>In this dissertation, growth and fabrication of III-nitride-based optoelectronic devices by Metal Organic Vapor Phase Epitaxial (MOVPE) have been studies. We achieved a small reverse leakage current because of the quality improvement of the lateral growth-induced crystal. Similar random scattering of light can be achieved by the embedded SiO2 pillars and air gap array structures. First, we improved the External Quantum Efficiency (IQE) by embedded SiO2 pillars and air gap array structures in u-GaN layers. In our study, the embedded 500 nm height SiO2 pillars

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張智松. "Fabrication and investigations of the AlGaInP/GaInP visible Light Emitting Diodes and visible Laser Diodes prepared by metalorganic vapor phase epitaxy." Thesis, 1998. http://ndltd.ncl.edu.tw/handle/04991211547218162856.

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Miraglia, Peter Quinn. "Growth via low pressure metalorganic vapor phase epitaxy and surface characterization of GaN and In(x)Ga(1-x)N thin films." 2001. http://www.lib.ncsu.edu/etd/public/etd-16231412610141921/etd.pdf.

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Chiou, Shu-Woei, and 邱舒偉. "Investigations of the AlGaAs and Al-free Vertical Cavity Surface emitting Laser by Metalorganic Vapor Phase Epitaxy and the fabrication of single transverse mode VCSEL." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/24465820153350490695.

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博士<br>國立交通大學<br>電子工程系<br>89<br>In this dissertation, we have successfully fabricated AlGaAs and Al-free Vertical Cavity Surface Emitting Lasers (VCSELs) by MOVPE system. Firstly, we discuss the design rule for the VCSEL, the main effort is put on how to achieve high reflectivity and low resistance distributed Bragg reflectors. (DBRs) Secondary, we have do many experiment to achieve the good quality of the active region of the VCSELs, and find the best condition to growth InGaAs quantum wells. We also succeed in epi high quality AlGaAs VCSEL epi wafer, and investigate the quick

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