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Relevant bibliographies by topics / Polycrystalline film

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Academic literature on the topic 'Polycrystalline film'

Author: Grafiati

Published: 28 May 2022

Last updated: 31 July 2025

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Journal articles on the topic "Polycrystalline film"

1

Chakraborty, Jay. "Phase Transformation in Ultra-Thin Films." Advanced Materials Research 996 (August 2014): 860–65. http://dx.doi.org/10.4028/www.scientific.net/amr.996.860.

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Thickness dependent structural phase transformation in thin polycrystalline metal films has been reviewed. Various effects of film thickness reduction on film microstructure have been identified. Film thickness dependent structural phase transformation has been treated thermodynamically taking polycrystalline titanium (Ti) thin film as model example.

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Liao, Yang, Wei Min Shi, Wei Guang Yang, Ji Rong Li, Jun Qian, and Shu Yi Lu. "Properties of Ohmic Contact of Au Electrode on Polycrystalline Mercuric Iodide." Advanced Materials Research 690-693 (May 2013): 1672–75. http://dx.doi.org/10.4028/www.scientific.net/amr.690-693.1672.

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Polycrystalline mercuric iodide films are being developed as a new detector technology for digital X-ray imaging. The properties of the contact between electrode and film play an important role in the performance of the polycrystalline mercuric iodide detector. In this paper, the films were grown on the thin film transistor (TFT) substrates via hot-wall physical vapor deposition method. Au front contacts were deposited onto the HgI2 films by thermal evaporation under a vacuum of 10-4Pa. The HgI2 films were characterized by X-ray diffraction (XRD). The surface morphology of the films before and

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3

Hossion, M. Abul, and B. M. Arora. "Synthesis of Boron-Doped Silicon Film Using Hot Wire Chemical Vapor Deposition Technique." Crystals 10, no. 4 (2020): 237. http://dx.doi.org/10.3390/cryst10040237.

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Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO2, glass/ITO/TiO2, Al2O3, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10−2 Ω-cm for the polycrystalline silicon film, which was suitable for using as a

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Burke, M. G., R. E. Witkowski, and R. T. Blackham. "Microstructure of polycrystalline diamond film." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 4 (1990): 708–9. http://dx.doi.org/10.1017/s0424820100176678.

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Diamond films have attracted considerable attention for use in a wide variety of industrial and commercial applications, particularly as coatings. Diamond coatings will enhance the performance of electro-optical systems, space-based photovoltaic power sources, packages for power electronic devices, and wear-limited processing equipment. These films are generally grown via plasma deposition or chemical vapor deposition techniques using a mixture. To characterize the as-grown diamond films, a variety of techniques including transmission electron microscopy are utilized. For this study, films wer

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Wang, Nan, Yu-Xiang Dai, Tian-Lin Wang, Hua-Zhe Yang, and Yang Qi. "Investigation of growth characteristics and semimetal–semiconductor transition of polycrystalline bismuth thin films." IUCrJ 7, no. 1 (2020): 49–57. http://dx.doi.org/10.1107/s2052252519015458.

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The preferred orientation growth characteristics and surface roughness of polycrystalline bismuth (Bi) thin films fabricated on glass substrates using the molecular beam epitaxy method were investigated at temperatures ranging from 18 to 150°C. The crystallization and morphology were analyzed in detail and the polycrystalline metal film structure-zone model (SZM) was modified to fit the polycrystalline Bi thin film. The boundary temperature between Zone T and Zone II in the SZM shifted to higher temperatures with the increase in film thickness or the decrease of growth rate. Furthermore, the e

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6

Miller, K. T., and F. F. Lange. "Highly oriented thin films of cubic zirconia on sapphire through grain growth seeding." Journal of Materials Research 6, no. 11 (1991): 2387–92. http://dx.doi.org/10.1557/jmr.1991.2387.

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A two-step process has been developed to form highly oriented thin films in material systems with dissimilar crystal structures and interatomic spacings. This processing method utilizes current polycrystalline thin film deposition techniques. In this method, a polycrystalline thin film is first deposited and heat treated to promote its breakup into isolated grains. The breakup process favors those grains that have a low substrate interfacial energy and so produces a film of highly oriented but isolated grains. In the second process step, another polycrystalline thin film is deposited. The remn

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7

Rusakova, I., A. Hamed, and P. H. Hor. "TEM study of C70 polycrystalline films." Journal of Materials Research 9, no. 11 (1994): 2814–22. http://dx.doi.org/10.1557/jmr.1994.2814.

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Using conventional and high resolution TEM, we have studied the microstructure of C70 polycrystalline films, prepared by sublimation of C70 powder onto glass, carbon holey film, and sapphire substrates held at 200 °C. An fcc structure with lattice parameter 1.50 nm is observed for the films on glass and amorphous carbon. A different structure and stronger adherence to the substrate was observed for the thin film grown on sapphire, suggesting a stronger molecule-substrate interaction in this case. Thicker films on sapphire, however, did have fcc structure. In all cases, the film grows in large

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8

M, Abul Hossion, and M. Arora Brij. "Synthesis of Boron-Doped Silicon Film Using Hot Wire Chemical Vapor Deposition Technique." Crystals 10, no. 4 (2020): 237–44. https://doi.org/10.3390/cryst10040237.

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Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO<sub>2</sub>, glass/ITO/TiO<sub>2</sub>, Al<sub>2</sub>O<sub>3</sub>, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10<sup>−2</sup> &Ome

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9

Miller, K. T., F. F. Lange, and D. B. Marshall. "The instability of polycrystalline thin films: Experiment and theory." Journal of Materials Research 5, no. 1 (1990): 151–60. http://dx.doi.org/10.1557/jmr.1990.0151.

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Dense polycrystalline thin films of ZrO2 (3 and 8 mol % Y2O3) were produced by the pyrolysis of zirconium acetate precursor films, which were deposited on single crystal Al2O3 substrates by spin-coating aqueous solutions of zirconium acetate and yttrium nitrate. Dense films were heat treated to encourage grain growth. With grain growth, these films broke into islands of ZrO2 grains. Identical areas were examined after each heat treatment to determine the mechanism that causes the polycrystalline film to uncover the substrate. Two mechanisms were detailed: (a) for a composition which inhibited

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10

SONG, HUIJIN, LILI WU, JIAGUI ZHENG, LIANGHUAN FENG, ZHI LEI, and JINGQUAN ZHANG. "STUDY ON AlSb POLYCRYSTALLINE THIN FILMS PREPARED BY VACUUM CO-EVAPORATION." International Journal of Modern Physics B 25, no. 13 (2011): 1747–55. http://dx.doi.org/10.1142/s0217979211100515.

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In this paper, the AlSb polycrystalline thin films were prepared by vacuum co-evaporation technology and their structural, optical and electrical properties have been studied. XRD results showed that the as-deposited AlSb amorphous thin films transformed to polycrystalline state after annealed in vacuum at temperatures higher than 540°C. The process of phase change was observed to depend on the annealing temperature and the film composition. Some irreversible changes took place in the annealed films during the measurement of the temperature dependence of the film conductance. The conductance a

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Dissertations / Theses on the topic "Polycrystalline film"

1

Meakin, Douglas Boyd. "Active devices in polycrystalline silicon." Thesis, University of Liverpool, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.240344.

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Inns, Daniel Photovoltaics &amp Renewable Energy Engineering Faculty of Engineering UNSW. "ALICIA polycrystalline silicon thin-film solar cells." Publisher:University of New South Wales. Photovoltaics & Renewable Energy Engineering, 2007. http://handle.unsw.edu.au/1959.4/43600.

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Thin-film silicon photovoltaics are seen as a good possibility for reducing the cost of solar electricity. The focus of this thesis is the ALICIA cell, a thin-film polycrystalline silicon solar cell made on a glass superstrate. The name ALICIA comes from the fabrication steps - ALuminium Induced Crystallisation, Ion Assisted deposition. The concept is to form a high-quality crystalline silicon layer on glass by Aluminium Induced Crystallisation (AIC). This is then the template from which to epitaxially grow the solar cell structure by Ion Assisted Deposition (IAD). IAD allows high-rate si

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Attygalle, Muthuthanthrige Lilani C. "Theoretical modeling of polycrystalline thin-film photovoltaics /." Connect to full text in OhioLINK ETD Center, 2008. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1204144362.

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Attygalle, Muthuthanthrige Lilani Chandrawansha. "Theoretical modeling of polycrystalline thin-film photovoltaics." University of Toledo / OhioLINK, 2008. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1204144362.

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Mackay, Ian. "Thin film electroluminescence /." Online version of thesis, 1989. http://hdl.handle.net/1850/10551.

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Coxon, Penelope Anne. "Polycrystalline silicon thin-film transistors for large-scale microelectronics." Thesis, University of Cambridge, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.358595.

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Kunz, Oliver Photovoltaics &amp Renewable Energy Engineering Faculty of Engineering UNSW. "Evaporated solid-phase crystallised poly-silicon thin film solar cells on glass." Publisher:University of New South Wales. Photovoltaics & Renewable Energy Engineering, 2009. http://handle.unsw.edu.au/1959.4/43644.

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The cost of photovoltaic electricity needs to be significantly reduced in order to achieve a high electricity market penetration. Thin-film solar cells have good potential to achieve such cost savings though (i) large-area deposition onto low-cost foreign substrates, (ii) more streamlined processing, (iii) monolithic cell interconnection, and very efficient use of the expensive semiconductor material. Polycrystalline silicon (poly-Si) on glass is a promising technology for the cost-effective large volume production of PV modules since it (i) makes use of an abundant raw material, (ii) is non

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He, Song Photovoltaics &amp Renewable Energy Engineering Faculty of Engineering UNSW. "Evaporated polycrystalline silicon thin-film solar cells by aluminium-induced crytallization solid-phase epitaxy." Awarded By:University of New South Wales. Photovoltaics & Renewable Energy Engineering, 2009. http://handle.unsw.edu.au/1959.4/44888.

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Polycrystalline silicon (poly-Si) thin-film solar cells are receiving attention by many researchers in recent times. The focus of this thesis is the evaporated ALICE solar cell, a thin-film poly-Si solar cell fabricated on a glass superstrate by e-beam evaporation. The acronymn ALICE comes from - ALuminium Induced Crystallization Solid Phase Epitaxy. The concept is first to form a high-quality crystalline silicon layer on glass by Aluminium Induced Crystallization (AIC). The AIC seed layer (grain size>20 ??m) acts as the template from which the crystalline information is transferred into the s

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9

Golego, Nickolay. "Thin-film polycrystalline titanium-oxygen semiconductors prepared by spray pyrolysis." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk2/ftp02/NQ33300.pdf.

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10

Chow, Thomas. "A conduction model for intrinsic polycrystalline silicon thin film transistor based on discrete grains /." View abstract or full-text, 2009. http://library.ust.hk/cgi/db/thesis.pl?ECED%202009%20CHOW.

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Books on the topic "Polycrystalline film"

1

Lindquist, Sten-Eric. Photoelectrochemical properties of polycrystalline TiO₂ thin film electrodes. Distributor, Almqvist & Wiksell International, 1988.

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2

T, Voutsas Apostolos, IS & T--the Society for Imaging Science and Technology., and Society of Photo-optical Instrumentation Engineers., eds. Poly-silicon thin film transistor technology and applications in displays and other novel technology areas: 21-22 January, 2003, Santa Clara, California, USA. SPIE, 2003.

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3

name, No. Poly-silicon thin film transistor technology and applications in display and other novel technology areas: 21-22 January, 2003, Santa Clara, California, USA. SPIE, 2003.

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4

Yu, Su. Effects of oxygen adsorption on the electrical properties of thin film polycrystalline. National Library of Canada, 1993.

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5

S, Ullal Harin, IEEE Photovoltaic Specialists Conference (33rd : 2008 : San Diego, Calif.), and National Renewable Energy Laboratory (U.S.), eds. The role of polycrystalline thin-film PV technologies in competitive PV module markets: Preprint. National Renewable Energy Laboratory, 2008.

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6

Deline, Chris. Metastable electrical characteristics of polycrystalline thin-film photovoltaic modules upon exposure and stabilization: Preprint. National Renewable Energy Laboratory, 2011.

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7

Symposium A, "Amorphous and Polycrystalline Thin-film Silicon Science and Technology" (2006 San Francisco, Calif.). Amorphous and polycrystalline thin-film silicon science and technology, 2006: Symposium held April 18-21, 2006 San Francisco, California U.S.A. Edited by Wagner S. (Sigurd). Materials Research Society, 2007.

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8

National Renewable Energy Laboratory (U.S.), ed. Porous polycrystalline silicon thin film solar cells: Final report, 24 May 1999-24 May 2002. National Renewable Energy Laboratory, 2003.

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9

Cueto, J. A. del. Striving for a standard protocol for preconditioning or stabilization of polycrystalline thin film photovoltaic modules. National Renewable Energy Laboratory, 2009.

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10

Karner, Christine. Thin film characterisation of polycrystalline II-VI display phosphor materials prepared bypulsed laser deposition and RF sputtering. The Author], 1997.

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Book chapters on the topic "Polycrystalline film"

1

Liu, Fengzhen, and Yurong Zhou. "Polycrystalline Silicon Thin Film." In Handbook of Photovoltaic Silicon. Springer Berlin Heidelberg, 2018. http://dx.doi.org/10.1007/978-3-662-52735-1_29-1.

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2

Liu, Fengzhen, and Yurong Zhou. "Polycrystalline Silicon Thin Film." In Handbook of Photovoltaic Silicon. Springer Berlin Heidelberg, 2019. http://dx.doi.org/10.1007/978-3-662-56472-1_29.

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3

Beaucarne, Guy, and Abdellilah Slaoui. "Thin Film Polycrystalline Silicon Solar Cells." In Thin Film Solar Cells. John Wiley & Sons, Ltd, 2006. http://dx.doi.org/10.1002/0470091282.ch3.

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4

Onuma, Y., S. Miyashita, Y. Nishibe, K. Kamimura, and K. Tezuka. "Thin Film Transistors Using Polycrystalline SiC." In Springer Proceedings in Physics. Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-75048-9_42.

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5

Clark, C. D., and C. B. Dickerson. "Electron irradiation and heat treatment of polycrystalline cvd diamond." In Thin Film Diamond. Springer Netherlands, 1994. http://dx.doi.org/10.1007/978-94-011-0725-9_7.

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6

Calzada, M. M. "Ferroelectrics onto Substrates Prepared by Chemical Solution Deposition: From the Thin Film to the Self-Assembled Nano-sized Structures." In Multifunctional Polycrystalline Ferroelectric Materials. Springer Netherlands, 2011. http://dx.doi.org/10.1007/978-90-481-2875-4_4.

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7

Budini, Nicolás, Roberto D. Arce, Román H. Buitrago, and Javier A. Schmidt. "Polycrystalline Silicon for Thin Film Solar Cells." In Alternative Energy and Shale Gas Encyclopedia. John Wiley & Sons, Inc., 2016. http://dx.doi.org/10.1002/9781119066354.ch21.

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Hu, Hao, Jun Liu, and Guangda Niu. "Perovskite Polycrystalline Film for X-Ray Imaging." In Metal-Halide Perovskite Semiconductors. Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-26892-2_15.

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Brotherton, Stan D. "Polycrystalline Silicon Thin Film Transistors (Poly-Si TFTs)." In Handbook of Visual Display Technology. Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-14346-0_48.

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Brotherton, Stan D. "Polycrystalline Silicon Thin Film Transistors (Poly-Si TFTs)." In Handbook of Visual Display Technology. Springer Berlin Heidelberg, 2015. http://dx.doi.org/10.1007/978-3-642-35947-7_48-2.

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Conference papers on the topic "Polycrystalline film"

1

Contreras, Miguel, H. Wiesner, and J. Webb. "Thin-film polycrystalline." In THERMOPHOTOVOLTAIC GENERATION OF ELECTRICITY. ASCE, 1997. http://dx.doi.org/10.1063/1.53306.

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2

Ellis, C. D., D. A. Jaworske, R. Ramesham, and T. Roppel. "Polycrystalline diamond film flow sensor." In IEEE 4th Technical Digest on Solid-State Sensor and Actuator Workshop. IEEE, 1990. http://dx.doi.org/10.1109/solsen.1990.109837.

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3

Dhere, Neelkanth G. "Polycrystalline-thin-film thermophotovoltaic cells." In The 2nd NREL conference on thermophotovoltaic generation of electricity. AIP, 1996. http://dx.doi.org/10.1063/1.49702.

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4

Wang, Xiaodong, Yirong Yang, Jianfang Xie, Weiyuan Wang, and Zongxin Ren. "Fabrication of polycrystalline diamond film resonators." In Micromachining and Microfabrication, edited by James H. Smith. SPIE, 1998. http://dx.doi.org/10.1117/12.324295.

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5

Liao, Yang, Dongmei Li, Jirong Li, et al. "Electrical properties of polycrystalline mercuric iodide detector." In Eighth International Conference on Thin Film Physics and Applications (TFPA13), edited by Junhao Chu and Chunrui Wang. SPIE, 2013. http://dx.doi.org/10.1117/12.2053108.

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Kim, Tae-Hyun, Muhammad N. Saleh, Sung Kim, et al. "Resistance switching in polycrystalline NiOx thin film." In Devices (COMMAD). IEEE, 2010. http://dx.doi.org/10.1109/commad.2010.5699751.

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Fahrenbruch, Alan L. "Modeling of polycrystalline thin film solar cells." In National center for photovoltaics (NCPV) 15th program review meeting. AIP, 1999. http://dx.doi.org/10.1063/1.57952.

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Carey, Paul G., Patrick M. Smith, Steven D. Theiss, Paul Wickboldt, and Thomas W. Sigmon. "Polycrystalline thin-film transistors on plastic substrates." In Electronic Imaging '99, edited by Bruce Gnade and Edward F. Kelley. SPIE, 1999. http://dx.doi.org/10.1117/12.344632.

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Eisgruber, I. L., and J. R. Sites. "Status of polycrystalline thin film solar cells." In The 12th NREL photovoltaic program review. AIP, 1994. http://dx.doi.org/10.1063/1.45710.

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Meyers, Peter V., and Daniel W. Sandwisch. "Polycrystalline thin film PV panel manufacturing program." In The 12th NREL photovoltaic program review. AIP, 1994. http://dx.doi.org/10.1063/1.45754.

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Reports on the topic "Polycrystalline film"

1

Strand, T., B. Kroposki, R. Hansen, and L. Mrig. Polycrystalline thin-film module and system performance. Office of Scientific and Technical Information (OSTI), 1995. http://dx.doi.org/10.2172/132676.

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Ullal, H. S. Polycrystalline Thin Film Solar Cell Technologies: Preprint. Office of Scientific and Technical Information (OSTI), 2008. http://dx.doi.org/10.2172/945980.

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Baron, B. N., R. W. Birkmire, J. E. Phillips, W. N. Shafarman, S. S. Hegedus, and B. E. McCandless. Fundamentals of polycrystalline thin film materials and devices. Office of Scientific and Technical Information (OSTI), 1991. http://dx.doi.org/10.2172/6343732.

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Bertoni, Mariana. Operando X-ray Nanocharacterization of Polycrystalline Thin Film Modules. Office of Scientific and Technical Information (OSTI), 2023. http://dx.doi.org/10.2172/2318735.

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Meyers, P. Polycrystalline thin film cadmium telluride n-i-p solar cells. Office of Scientific and Technical Information (OSTI), 1990. http://dx.doi.org/10.2172/6772805.

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Trefny, J. U., and D. Mao. Polycrystalline thin-film cadmium telluride solar cells fabricated by electrodeposition. Annual technical report. Office of Scientific and Technical Information (OSTI), 1998. http://dx.doi.org/10.2172/564269.

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Gray, J. L., R. J. Schwartz, and Y. J. Lee. Development of a Computer Model for Polycrystalline Thin-Film CuInSe2 and CdTe Solar Cells. Office of Scientific and Technical Information (OSTI), 1992. http://dx.doi.org/10.2172/7023173.

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Baron, B. N., R. W. Birkmire, J. E. Phillips, W. N. Shafarman, S. S. Hegedus, and B. E. McCandless. Polycrystalline thin film materials and devices. Annual subcontract report, 16 January 1990--15 January 1991. Office of Scientific and Technical Information (OSTI), 1991. http://dx.doi.org/10.2172/10106021.

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Sites, J. R. Device Physics of Thin-Film Polycrystalline Cells and Modules: Final Report, February 1998 -- August 2001. Office of Scientific and Technical Information (OSTI), 2002. http://dx.doi.org/10.2172/15000241.

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10

Fauchet, P. Porous Polycrystalline Silicon Thin Film Solar Cells: Final Report, 24 May 1999--24 May 2002. Office of Scientific and Technical Information (OSTI), 2003. http://dx.doi.org/10.2172/15004831.

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