Relevant bibliographies by topics / Semiconductor oxide compound

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Semiconductor oxide compound'

Author: Grafiati
Published: 28 May 2022
Last updated: 31 July 2025

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Journal articles on the topic "Semiconductor oxide compound"

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Knopp, K. J., R. P. Mirin, K. A. Bertness, K. L. Silverman, and D. H. Christensen. "Compound semiconductor oxide antireflection coatings." Journal of Applied Physics 87, no. 10 (2000): 7169–75. http://dx.doi.org/10.1063/1.372965.

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Rachmady, Willy, James Blackwell, Gilbert Dewey, et al. "Surface Preparation and Passivation of III-V Substrates for Future Ultra-High Speed, Low Power Logic Applications." Solid State Phenomena 145-146 (January 2009): 165–67. http://dx.doi.org/10.4028/www.scientific.net/ssp.145-146.165.

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III-V compound semiconductors have been recognized among the potential options for continuing transistor power-performance scaling owing to their ultra high charge carrier mobility. In order to realize their potential in high performance and lower-power digital logic applications, there must be strong gate control and a high Ion-Ioff ratio, achieved by integrating a stable, ultra thin high-K dielectric between the semiconductor and the gate [1, 2]. Unlike Si, which has long benefited from its very stable native oxide, III-V materials suffer from their poor native oxides that cause charge traps
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Li, Jiawei. "Recent Progress of β-Ga2O3 and Transition Metal doped β- Ga2O3 Structure and Properties". Highlights in Science, Engineering and Technology 99 (18 червня 2024): 247–52. http://dx.doi.org/10.54097/er1nze77.

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Oxide semiconductor material formed from oxygen and a metal is a compound semiconductor material. Important oxide semiconductor materials include Cu2O, ZnO, SnO2, Fe2O3, TiO2, ZrO2, CoO, WO3, Ga2O3 and others. Oxide semiconductors have been receiving strong attention and are widely used in different fields such as solar cells and photovoltaic technology. Due to the development of technology, the high-performance techniques demand more from the parts. Semiconductor is an intensively researched substance that can be used in a wide range of technologies. β-Ga2O3 is a metal oxide that has good pro
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John Chelliah, Cyril R. A., and Rajesh Swaminathan. "Current trends in changing the channel in MOSFETs by III–V semiconducting nanostructures." Nanotechnology Reviews 6, no. 6 (2017): 613–23. http://dx.doi.org/10.1515/ntrev-2017-0155.

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AbstractThe quest for high device density in advanced technology nodes makes strain engineering increasingly difficult in the last few decades. The mechanical strain and performance gain has also started to diminish due to aggressive transistor pitch scaling. In order to continue Moore’s law of scaling, it is necessary to find an effective way to enhance carrier transport in scaled dimensions. In this regard, the use of alternative nanomaterials that have superior transport properties for metal-oxide-semiconductor field-effect transistor (MOSFET) channel would be advantageous. Because of the e
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Mao, Tan, Mengchen Liu, Liyuan Lin, Youliang Cheng, and Changqing Fang. "A Study on Doping and Compound of Zinc Oxide Photocatalysts." Polymers 14, no. 21 (2022): 4484. http://dx.doi.org/10.3390/polym14214484.

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As an excellent semiconductor photocatalyst, zinc oxide is widely used in the field of photocatalysis and is regarded as one of the most reliable materials to solve environmental problems. However, because its band gap energy limits the absorption of visible light and reduces the efficiency of catalytic degradation, it needs to be doped with other substances or compounded with other substances and precious metal. This paper summarizes the research on this aspect at home and abroad in recent years, introduces the doping of transition metal ions by zinc oxide, the compounding of zinc oxide with
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Rakhymbekov, Aitbai, Aigul Idrisova, Rosa Saduakasova, Gulmira Nurbosynova, and Meruert Turlybekova. "Preparation of a Semiconductor Film with the Aid of a Superionic." Key Engineering Materials 771 (June 2018): 130–35. http://dx.doi.org/10.4028/www.scientific.net/kem.771.130.

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The actuality of the topic chosen by us lies in the fact that the effect of oxygen on the properties of semiconductors has not been studied sufficiently well, mainly because of the imperfections of methods for controlling the oxygen content in semiconductor materials. Almost in all such materials, oxygen is present either as an uncontrolled impurity or as a doping additive, or, in the case of oxide semiconductors, as in our case with a semiconductor film of vanadium dioxide, is part of the compound. The oxygen contained in the semiconductor film significantly affects the property of the materi
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Nishio, Kenya, Suguru Saito, Yoshiya Hagimoto, and Hayato Iwamoto. "Effect of WET treatment on Group III-V Compound Semiconductor Surface." Solid State Phenomena 282 (August 2018): 43–47. http://dx.doi.org/10.4028/www.scientific.net/ssp.282.43.

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In this work, we investigated interfacial properties of InP, which is a typical group III-V compound used for semiconductors, by using a chemical-treated metal oxide semiconductor (MOS) capacitor. The interfacial properties of InP is more affected by interface state density than the surface roughness and is greatly affected by In2O3in particular. Additionally, we evaluated In2O3growth during 24-hour rinsing and air exposure and found that In2O3on an InP surface grows larger during rinsing than during air exposure. To reduce In2O3, the rinse needs to be optimized.
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Hibi, Hideaki, Masahito Yamaguchi, Naoki Yamamoto, and Fumitaro Ishikawa. "Selective Synthesis of Compound Semiconductor/Oxide Composite Nanowires." Nano Letters 14, no. 12 (2014): 7024–30. http://dx.doi.org/10.1021/nl503385g.

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Bennett, Brian R., Mario G. Ancona, and J. Brad Boos. "Compound Semiconductors for Low-Power p-Channel Field-Effect Transistors." MRS Bulletin 34, no. 7 (2009): 530–36. http://dx.doi.org/10.1557/mrs2009.141.

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AbstractResearch in n-channel field-effect transistors based upon III–V compound semiconductors has been very productive over the last 30 years, with successful applications in a variety of high-speed analog circuits. For digital applications, complementary circuits are desirable to minimize static power consumption. Hence, p-channel transistors are also needed. Unfortunately, hole mobilities are generally much lower than electron mobilities for III–V compounds. This article reviews the recent work to enhance hole mobilities in antimonide-based quantum wells. Epitaxial heterostructures have be
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Motoyoshi, Ryosuke, Takeo Oku, Atsushi Suzuki, et al. "Fabrication and Characterization of Copper System Compound Semiconductor Solar Cells." Advances in Materials Science and Engineering 2010 (2010): 1–11. http://dx.doi.org/10.1155/2010/562842.

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Copper system compound semiconductor solar cells were produced by a spin-coating method, and their cell performance and structures were investigated. Copper indium disulfide- (CIS-) based solar cells with titanium dioxide (TiO2) were produced on F-dopedSnO2(FTO). A device based on an FTO/CIS/TiO2structure provided better cell performance compared to that based on FTO/TiO2/CIS structure. Cupric oxide- (CuO-) and cuprous oxide- (Cu2O-) based solar cells with fullerene (C60) were also fabricated on FTO and indium tin oxide (ITO). The microstructure and cell performance of the CuO/C60heterojunctio
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Dissertations / Theses on the topic "Semiconductor oxide compound"

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Ramanathan, Sivakumar. "Optical Characterization of Electrochemically Self-Assembled Compound Semiconductor Nanowires." VCU Scholars Compass, 2006. http://scholarscompass.vcu.edu/etd/1436.

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Semiconductor nanowires have attracted considerable attention as possible source for lasers and optical storage media. We report the fabrication and optical characterization of ZnO and CdS nanowires. The former are produced by electrochemical deposition of Zn inside nanoporous alumina films containing regimented arrays of 10nm, 25nm and 50 nm diameter pores, followed by room temperature chemical oxidization. Fluorescence spectroscopy shows different characteristics associated with different sample diameter. The 50 nm ZnO nanowires show an exciton recombination peak and an additional peak relat
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Fenwick, William Edward. "Metalorganic chemical vapor deposition of gallium nitride on sacrificial substrates." Diss., Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/34687.

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GaN-based light emitting diodes (LEDs) face several challenges if the technology is to make a significant impact on the solid state lighting market. The two most pressing of these challenges are cost and efficiency. The development of alternative substrate technologies shows promise toward addressing both of these challenges, as both GaN-based device technology and the associated metalorganic chemical vapor deposition (MOCVD) technology are already relatively mature. Zinc oxide (ZnO) and silicon (Si) are among the most promising alternative substrates for GaN epitaxy. This work focuses on
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Holmes, Adrian Lawrence. "Compound semiconductor native oxide-based technologies for optical and electrical devices grown on GaAs substrates using MOCVD /." Digital version accessible at:, 1999. http://wwwlib.umi.com/cr/utexas/main.

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Goyal, Puneet. "Design and simulation of strained-Si/strained SiGe dual channel hetero-structure MOSFETs /." Online version of thesis, 2007. http://hdl.handle.net/1850/5281.

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Владзієвська, П. А., О. В. Д’яченко, Анатолій Сергійович Опанасюк, Анатолий Сергеевич Опанасюк та Anatolii Serhiiovych Opanasiuk. "Структурні характеристики плівок твердого розчину (Zn, Mg) O, осаджених методом пульсуючого спрей-піролізу". Thesis, Сумський державний університет, 2017. http://essuir.sumdu.edu.ua/handle/123456789/65498.

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Напівпровідникові оксидні сполуки знаходять все більшого застосування в електроніці, однак для цього їх структурні та оптичні властивості повинні чітко відповідати конкретним застосуванням. Для керування фізичними властивостями шарів напівпровідників застосовують введення ізовалентних домішок, при цьому твердий розчин набуває проміжних між вихідними сполуками характеристик. Для проведення структурних досліджень зразків застосовувався метод рентгеноструктурного аналізу. Шляхом порівняння міжплощинних відстаней і відносної інтенсивності досліджених зразків і еталона (картки JCPDS) було проведено
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Clarke, Jill. "The photocatalytic degradation of phenolic compounds." Thesis, Open University, 1998. http://oro.open.ac.uk/57738/.

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Semiconductor photocatalysis degrades phenolic pollutants to carbon dioxide and water, but the mechanisms of this potentially attractive method of environmental remediation remain unclear. This study aimed to elucidate the primary molecular events by HPLC analysis of the initial products of degradation in water or aqueous acetonitrile. The position of substituents relative to the hydroxyl group were found to influence the reaction rate and also primary oxidation steps, and hence the intermediate profile. 2,6- Dialkylated phenols reacted fastest and showed high conversion to dehydrodimeric prod
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Hui, Chun-wai. "Positron annihilation spectroscopic studies of undoped n-type zinc oxide single crystal." Click to view the E-thesis via HKUTO, 2006. http://sunzi.lib.hku.hk/hkuto/record/B38573398.

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Hui, Chun-wai, and 許俊偉. "Positron annihilation spectroscopic studies of undoped n-type zinc oxide single crystal." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2006. http://hub.hku.hk/bib/B38573398.

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Chinchani, Rameshwari. "Strained silicon/silicon-germanium heterostructure complimentary metal oxide semiconductor devices a simulation study of linearity /." Ohio : Ohio University, 2004. http://www.ohiolink.edu/etd/view.cgi?ohiou1176143999.

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Gilstrap, Richard Allen Jr. "A colloidal nanoparticle form of indium tin oxide: system development and characterization." Diss., Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/33995.

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A logical progression from the maturing field of colloidal semiconductor quantum dots to the emerging subclass of impurity-doped colloidal semiconductor nanoparticles is underway. To this end, the present work describes the formation and analysis of a new form of Tin-doped Indium Oxide (ITO). The form is that of a colloidal dispersion comprised of pure-phase, 4-6 nanometer ITO particles possessing an essentially single crystalline character. This system forms a non-agglomerated, optically clear solution in a variety of non-polar solvents and can remain in this state, at room temperature, f
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Books on the topic "Semiconductor oxide compound"

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Klaus, Ploog, Trankle G, Weimann G, and Institute of Physics (Great Britain), eds. Compound semiconductors 1999: Proceedings of the Twenty-sixth International Symposium on Compound Semiconductors held in Berlin, Germany, 22-26 August 1999. Institute of Physics Pub., 2000.

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Zhang, Xiaoge Gregory. Electrochemistry of Silicon and Its Oxide. Springer, 2013.

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Zhang, Xiaoge Gregory. Electrochemistry of Silicon and Its Oxide. Springer London, Limited, 2007.

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Compound Semiconductors 1999: Proceedings of the 26th International Symposium on Compound Semiconductors, 23-26th August 1999, Berlin, Germany (Institute of Physics Conference). Taylor & Francis, 2000.

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Kimizuka, Noboru, and Shunpei Yamazaki. Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO: Fundamentals. Wiley & Sons, Incorporated, John, 2016.

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Kimizuka, Noboru, and Shunpei Yamazaki. Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO: Fundamentals. Wiley & Sons, Limited, John, 2016.

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Kimizuka, Noboru, and Shunpei Yamazaki. Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO: Fundamentals. Wiley & Sons, Incorporated, John, 2016.

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Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO: Fundamentals. Wiley, 2016.

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Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO: Application to Displays. Wiley & Sons, Limited, John, 2017.

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Yamazaki, Shunpei, and Tetsuo Tsutsui. Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO: Application to Displays. Wiley & Sons, Incorporated, John, 2016.

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Book chapters on the topic "Semiconductor oxide compound"

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Wilmsen, C. W. "Oxide/III-V Compound Semiconductor Interfaces." In Physics and Chemistry of III-V Compound Semiconductor Interfaces. Springer US, 1985. http://dx.doi.org/10.1007/978-1-4684-4835-1_7.

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Milojevic, Marko, Christopher L. Hinkle, Eric M. Vogel, and Robert M. Wallace. "Interfacial Chemistry of Oxides on III-V Compound Semiconductors." In Fundamentals of III-V Semiconductor MOSFETs. Springer US, 2010. http://dx.doi.org/10.1007/978-1-4419-1547-4_6.

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Fukumura, Tomoteru, and Masashi Kawasaki. "Magnetic Oxide Semiconductors: On the High-Temperature Ferromagnetism in TiO2- and ZnO-Based Compounds." In Functional Metal Oxides. Wiley-VCH Verlag GmbH & Co. KGaA, 2013. http://dx.doi.org/10.1002/9783527654864.ch3.

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Vasiliev, Roman B., Artem S. Chizhov, and Marina N. Rumyantseva. "Colloidal Nanoparticles of II-VI Semiconductor Compounds and Their Participation in Photosensitization of Metal Oxides." In Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors. Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-19531-0_7.

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da Silva, E. C. F. "Diluted magnetic oxides: magnetic properties." In New Data and Updates for IV-IV, III-V, II-VI and I-VII Compounds, their Mixed Crystals and Diluted Magnetic Semiconductors. Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14148-5_297.

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Talapaneni, Trinath, Vatsala Chaturvedi, and Ankireddy Narendra. "Materials Used in the Design of Semiconductor Devices." In Semiconductor Nanoscale Devices: Materials and Design Challenges. BENTHAM SCIENCE PUBLISHERS, 2025. https://doi.org/10.2174/9789815313208125010006.

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The design and advancement of semiconductor devices are fundamentally rooted in the diverse range of materials utilized, each selected for its unique properties and contributions to device performance. This chapter explores the necessity and history of semiconductor materials, tracing their evolution and wide-ranging applications. Central to this discussion are the elemental semiconductors derived from the periodic table, focusing on silicon, germanium, and gray tin, which have historically underpinned the semiconductor industry. Also, this chapter differentiates between intrinsic and extrinsi
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Munteanu, Daniela, and Jean-Luc Autran. "Interactions between Terrestrial Cosmic-Ray Neutrons and III–V Compound Semiconductors." In Modeling and Simulation in Engineering - Selected Problems. IntechOpen, 2020. http://dx.doi.org/10.5772/intechopen.92774.

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This work explores by numerical simulation the impact of high-energy atmospheric neutrons and their interactions with III–V binary compound semiconductors. The efforts have focused on eight III–V semiconductors: GaAs, AlAs, InP, InAs, GaSb, InSb, GaN, and GaP. For each material, extensive Geant4 numerical simulations have been performed considering a bulk target exposed to a neutron source emulating the atmospheric neutron spectrum at terrestrial level. Results emphasize in detail the reaction rates per type of reaction (elastic, inelastic, nonelastic) and offer a classification of all the neu
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Schwarz, Daniel, Michael Oehme, and Erich Kasper. "Molecular Beam Epitaxy of Si, Ge, and Sn and Their Compounds." In Thin Films - Growth, Characterization and Electrochemical Applications [Working Title]. IntechOpen, 2023. http://dx.doi.org/10.5772/intechopen.114058.

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In the past decade, the increasing need for high-performance micro- and nanoelectronics has driven the research on group IV heterostructure devices, which utilize quantum effects as dominant working principle. The compound semiconductor SiGeSn has presented itself as promising material system for group IV heterostructures due to its unique properties. Prominent applications range from the Si-integrated laser to tunneling field effect transistors for the next complementary metal oxide semiconductor generations. However, the epitaxy of heterostructures requires atomic sharp material transitions
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Dhara, Arup. "SYNTHESIS AND ELECTRICAL TRANSPORT PROPERTIES OF METAL OXIDE NANOMATERIALS." In Futuristic Trends in Chemical Material Sciences & Nano Technology Volume 3 Book 8. Iterative International Publishers, Selfypage Developers Pvt Ltd, 2024. http://dx.doi.org/10.58532/v3becs8p4ch3.

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Metal oxides play a crucial task in several areas of physics, chemistry and material sciences. The elemental metals can form varieties of oxide compounds[1–4]. This variation can occur due to structural geometry, multi-valancy, doping effect etc. They can implement different geometrical structure with an electronic structure that can show metallic, semiconductor or insulator character. Metal oxides semiconductor draws a scientific attention due to their intrinsic worth in multipurpose fields applications such as catalysis ,energy conversion, magnetic memory devices ,batteries, solid oxide fuel
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Koley, Sudipta. "Theoretical Framework of Novel Oxide Compounds for Visible Range Light-Emitting Devices." In Advances in Computational Intelligence and Robotics. IGI Global, 2025. https://doi.org/10.4018/979-8-3693-7974-5.ch025.

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Composite oxides have been proved to be valuable materials in optoelectronic applications. The combination of indium oxide and gallium oxide and other oxides can lead to enhanced optical and electronic properties, making them suitable for a variety of optoelectronic devices. A favorable energy band gap is needed in the visible region of the spectrum, indicating the applicability in optoelectronic devices such as LEDs and solar cells. Overall band gap engineering and tuning the radiative recombination is a challenge for new age semiconductors. Artificial Intelligence and Machine Learning have b
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Conference papers on the topic "Semiconductor oxide compound"

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Tsukazaki, Atsushi, and Kohei Fujiwara. "Interface engineering of Sn-based oxide semiconductors." In 2019 Compound Semiconductor Week (CSW). IEEE, 2019. http://dx.doi.org/10.1109/iciprm.2019.8819029.

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Gary Kwok, Cheuk Kai, Chao Ping Liu, and Kin Man Yu. "Sol-gel synthesis of highly transparent and conducting Cadmium Oxide." In 2019 Compound Semiconductor Week (CSW). IEEE, 2019. http://dx.doi.org/10.1109/iciprm.2019.8819192.

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Yatabe, Zenji, Koshi Nishiyama, Takaaki Tsuda, Kazuki Nishimura, and Yusui Nakamura. "Characterization of amorphous aluminium oxide thin films synthesized by mist-CVD." In 2019 Compound Semiconductor Week (CSW). IEEE, 2019. http://dx.doi.org/10.1109/iciprm.2019.8819036.

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Zhou, Jingan, Xuan Zhao, Rui Xu та ін. "Characterizations of Second-order Nonlinear Optical Susceptibility for ε-phase Gallium Oxide". У 2022 Compound Semiconductor Week (CSW). IEEE, 2022. http://dx.doi.org/10.1109/csw55288.2022.9930385.

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Cao, Y., J. Zhang, T. H. Kosel, D. C. Hall, and P. Fay. "Microwave-Frequency InAlP-oxide/GaAs MOSFETs." In 2006 IEEE Compound Semiconductor Integrated Circuit Symposium. IEEE, 2006. http://dx.doi.org/10.1109/csics.2006.319874.

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Guziewicz, Elzbieta, Ewa Przezdziecka, and Tomasz A. Krajewski. "Zinc Oxide Grown by ALD - from Heavily $n$-type to $p$-type Material." In 2019 Compound Semiconductor Week (CSW). IEEE, 2019. http://dx.doi.org/10.1109/iciprm.2019.8819226.

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Jessen, Gregg, Kelson Chabak, Andrew Green, et al. "Gallium oxide technologies and applications." In 2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS). IEEE, 2017. http://dx.doi.org/10.1109/csics.2017.8240464.

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Wang, Taifang, Luca Nela, Jun Ma, and Elison Matioli. "Novel Slanted Field Plate Technology for GaN HEMTs by Grayscale Lithography on Flowable Oxide." In 2019 Compound Semiconductor Week (CSW). IEEE, 2019. http://dx.doi.org/10.1109/iciprm.2019.8818997.

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Patil, Vijay, Byung-Taek Lee, and Sang-Hun Jeong. "Effect of growth variables on properties of gallium oxide thin films grown by sputtering." In 2019 Compound Semiconductor Week (CSW). IEEE, 2019. http://dx.doi.org/10.1109/iciprm.2019.8819085.

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Li, Qiang, Jae-Hoon Han, Tsung-En Lee, Shinichi Takagi, and Mitsuru Takenaka. "Equivalent oxide thickness scaling for efficient III-V/Si hybrid MOS optical phase shifter." In 2019 Compound Semiconductor Week (CSW). IEEE, 2019. http://dx.doi.org/10.1109/iciprm.2019.8819195.

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Reports on the topic "Semiconductor oxide compound"

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Hall, Douglas C., Gregory L. Snider, and Bruce A. Bunker. III-V Compound Semiconductor Native Oxide Mosfets With Focus on Interface Studies. Defense Technical Information Center, 2001. http://dx.doi.org/10.21236/ada388295.

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Grubin, H. L. Physics and Modeling of Compound SemiConductor Devices with Semi-Insulating and Native-Oxide Layers. Defense Technical Information Center, 2000. http://dx.doi.org/10.21236/ada405684.

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Hall, Douglas C., Patrick J. Fay, Thomas H. Kosel, Bruce A. Bunker, and Russell D. Dupuis. Electronic Properties and Device Applications of III-V Compound Semiconductor Native Oxides. Defense Technical Information Center, 2006. http://dx.doi.org/10.21236/ada449186.

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Wilmsen, C. W. Growth Mechanism and Properties of the Thermal and Anodic Oxides of the III-V Compound Semiconductors. Defense Technical Information Center, 1985. http://dx.doi.org/10.21236/ada153406.

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