Relevant bibliographies by topics / SiC power MOSFET

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'SiC power MOSFET'

Author: Grafiati
Published: 14 March 2023
Last updated: 31 July 2025

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Journal articles on the topic "SiC power MOSFET"

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Lichtenwalner, Daniel J., Brett Hull, Vipindas Pala, et al. "Performance and Reliability of SiC Power MOSFETs." MRS Advances 1, no. 2 (2016): 81–89. http://dx.doi.org/10.1557/adv.2015.57.

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ABSTRACTDue to the wide bandgap and other key materials properties of 4H-SiC, SiC MOSFETs offer performance advantages over competing Si-based power devices. For example, SiC can more easily be used to fabricate MOSFETs with very high voltage ratings, and with lower switching losses. Silicon carbide power MOSFET development has progressed rapidly since the market release of Cree’s 1200V 4H-SiC power MOSFET in 2011. This is due to continued advancements in SiC substrate quality, epitaxial growth capabilities, and device processing. For example, high-quality epitaxial growth of thick, low-doped
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Li, Ruizhe. "The advantages and short circuit characteristics of SiC MOSFETs." Applied and Computational Engineering 49, no. 1 (2024): 58–64. http://dx.doi.org/10.54254/2755-2721/49/20241059.

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SiC MOSFETs have exhibited considerable benefits in high-frequency, high-voltage, and high-temperature power electronics applications with outstanding material attributes as a result of the rapid advancement of power electronics technology. SiC MOSFETs slower short-circuit tolerance and faster switching rates provide new issues for the short-circuit prevention technology. In the opening section of the study, Si and SiC MOSFETs are compared and evaluated using various models and parametric factors. It has been demonstrated that SiC MOSFETs outperform Si MOSFETs in a variety of conditions and ap
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Hsu, Fu Jen, Cheng Tyng Yen, Hsiang Ting Hung, Jia Wei Hu, and Chih Fang Huang. "High Density 65W AC-DC Adaptor Enabled by SiC MOSFET with Ultralow V<sub>GS(on)</sub>." Key Engineering Materials 948 (June 6, 2023): 89–93. http://dx.doi.org/10.4028/p-tuypqj.

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SiC MOSFETs are rarely used in low-power consumer applications because of their cost and gate driving circuitry requirement. In this work, a cost-efficient SiC MOSFET with a usable 10V of VGS is proposed. The proposed SiC MOSFET could enable low-power applications, which is around tens to hundreds of watt, to implement SiC MOSFETs. As a result, the thermal performance is better than the GaN solution thanks to the better thermal conductance of the SiC.
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Funaki, Tsuyoshi, Yuki Nakano, and Takashi Nakamura. "Comparative Study of SiC MOSFETs in High Voltage Switching Operation." Materials Science Forum 717-720 (May 2012): 1081–84. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1081.

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SiC power device is expected to have high breakdown voltage with low on resistance, which cannot be attainable for conventional Si device. This study evaluates the switching performance of high voltage SiC MOSFETs with comparing to that of conventional Si power MOSFET having equivalent breakdown voltage. To this end, turn-on and turn-off switching operation of MOSFETs are assessed with resistive load for same conduction current density. Though the on resistance of SiC MOSFETs are quite lower than Si MOSFET, especially for trench gate type. But, SiC MOSFETs have larger terminal capacitance. The
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Kong, Moufu, Zewei Hu, Ronghe Yan, Bo Yi, Bingke Zhang, and Hongqiang Yang. "A novel SiC high-k superjunction power MOSFET integrated Schottky barrier diode with improved forward and reverse performance." Journal of Semiconductors 44, no. 5 (2023): 052801. http://dx.doi.org/10.1088/1674-4926/44/5/052801.

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Abstract A new SiC superjunction power MOSFET device using high-k insulator and p-type pillar with an integrated Schottky barrier diode (Hk-SJ-SBD MOSFET) is proposed, and has been compared with the SiC high-k MOSFET (Hk MOSFET), SiC superjuction MOSFET (SJ MOSFET) and the conventional SiC MOSFET in this article. In the proposed SiC Hk-SJ-SBD MOSFET, under the combined action of the p-type region and the Hk dielectric layer in the drift region, the concentration of the N-drift region and the current spreading layer can be increased to achieve an ultra-low specific on-resistance (R on,sp). The
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Qiu, Guoqing, Kedi Jiang, Shengyou Xu, Xin Yang, and Wei Wang. "Modeling and analysis of the characteristics of SiC MOSFET." Journal of Physics: Conference Series 2125, no. 1 (2021): 012051. http://dx.doi.org/10.1088/1742-6596/2125/1/012051.

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Abstract Although the superior performance of SiC MOSFET devices has beenvalidated by many studies, it is necessary to overcome many technical bottlenecks to make SiC MOSFET gradually replace Si-based power devices into the mainstream. In view of the current situation where the performance of SiC MOSFETs in power conversion devices cannot be evaluated well at this stage, it is necessary to carry out fine modeling of SiC MOSFETs and establish accurate simulation models. In this paper, the powerful mathematical processing capability and rich modules of Matlab/Simulink are used to build a SiC MOS
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Green, Ronald, Aivars J. Lelis, and Daniel B. Habersat. "Charge Trapping in Sic Power MOSFETs and its Consequences for Robust Reliability Testing." Materials Science Forum 717-720 (May 2012): 1085–88. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1085.

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Threshold voltage (VT) instability remains an important issue for the performance, reliability, and qualification of SiC power MOSFET devices. The direct application of existing reliability test standards to SiC power MOSFETs can in some cases result in an inconsistent pass/fail response for a given device. To ensure SiC MOSFET device reliability, some modifications to existing test methods may be necessary..
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Matocha, Kevin, Peter A. Losee, Arun Gowda, et al. "Performance and Reliability of SiC MOSFETs for High-Current Power Modules." Materials Science Forum 645-648 (April 2010): 1123–26. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.1123.

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We address the two critical challenges that currently limit the applicability of SiC MOSFETs in commercial power conversion systems: high-temperature gate oxide reliability and high total current rating. We demonstrate SiC MOSFETs with predicted gate oxide reliability of &gt;106 hours (100 years) operating at a gate oxide electric field of 4 MV/cm at 250°C. To scale to high total currents, we develop the Power Overlay planar packaging technique to demonstrate SiC MOSFET power modules with total on-resistance as low as 7.5 m. We scale single die SiC MOSFETs to high currents, demonstrating a la
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van Zeghbroeck, Bart, and Hamid Fardi. "Comparison of 3C-SiC and 4H-SiC Power MOSFETs." Materials Science Forum 924 (June 2018): 774–77. http://dx.doi.org/10.4028/www.scientific.net/msf.924.774.

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A comprehensive comparison of 3C-SiC and 4H-SiC power MOSFETs was performed, aimed at quantifying and comparing the devices’ on-resistance and switching loss. To this end, the relevant material parameters were collected using experimental data where available, or those obtained by simulation. This includes the bulk mobility as a function of doping density, the breakdown field as a function of doping and the MOSFET channel mobility. A device model was constructed and then used to calculate the on-resistance and breakdown voltage of a properly scaled device as a function of the doping density of
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Han, Ki Jeong, B. Jayant Baliga, and Woong Je Sung. "1.2 kV 4H-SiC Split-Gate Power MOSFET: Analysis and Experimental Results." Materials Science Forum 924 (June 2018): 684–88. http://dx.doi.org/10.4028/www.scientific.net/msf.924.684.

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This paper presents a 1.2kV-rated 4H-SiC Split-Gate power MOSFET (SG-MOSFET) with superior high frequency figures-of-merit (HF-FOM). Electrical characteristics including reverse transfer capacitance and gate-to-drain charge are measured from fabricated devices on a 6-inch SiC wafer, demonstrating excellent performance. Compared to the conventional MOSFETs, the SG-MOSFET provides about 7x smaller HF-FOM [RonxCgd] and 2x smaller HF-FOM [RonxQgd] with improved reverse transfer capacitance and gate-to-drain charge.
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Dissertations / Theses on the topic "SiC power MOSFET"

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Linewih, Handoko, and h. linewih@griffith edu au. "Design and Application of SiC Power MOSFET." Griffith University. School of Microelectronic Engineering, 2003. http://www4.gu.edu.au:8080/adt-root/public/adt-QGU20030506.013152.

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This thesis focuses on the design of high voltage MOSFET on SiC and its application in power electronic systems. Parameters extraction for 4H SiC MOS devices is the main focus of the first topic developed in this thesis. Calibration of two-dimensional (2-D) device and circuit simulators (MEDICI and SPICE) with state-of-the-art 4H SiC MOSFETs data are performed, which includes the mobility parameter extraction. The experimental data were obtained from lateral N-channel 4H SiC MOSFETs with nitrided oxide-semiconductor interfaces, exhibiting normal mobility behavior. The presence of increasing in
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Linewih, Handoko. "Design and Application of SiC Power MOSFET." Thesis, Griffith University, 2003. http://hdl.handle.net/10072/367638.

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This thesis focuses on the design of high voltage MOSFET on SiC and its application in power electronic systems. Parameters extraction for 4H SiC MOS devices is the main focus of the first topic developed in this thesis. Calibration of two-dimensional (2-D) device and circuit simulators (MEDICI and SPICE) with state-of-the-art 4H SiC MOSFETs data are performed, which includes the mobility parameter extraction. The experimental data were obtained from lateral N-channel 4H SiC MOSFETs with nitrided oxide-semiconductor interfaces, exhibiting normal mobility behavior. The presence of increasing in
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Chen, Cheng. "Studies of SiC power devices potential in power electronics for avionic applications." Thesis, Université Paris-Saclay (ComUE), 2016. http://www.theses.fr/2016SACLN045.

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Mes travaux de thèse dans les laboratoires SATIE de ENS de Cachan et Ampère de l’INSA de Lyon se sont déroulés dans le cadre du projet Gestion OptiMisée de l'Energie (GENOME) pour étudier le potentiel de certains composants de puissance (JFET, MOSFET et BJT) en carbure de silicium (SiC) dans des convertisseurs électroniques de puissance dédiés à des applications aéronautiques suite au développement de l'avion plus électrique. La première partie de mes travaux étudie la robustesse de MOSFET et BJT en SiC soumis à des régimes de court circuit. Pour les MSOFET SiC, en soumettant ces transistors à
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Rajagopal, Narayanan. "Design of 1.7 kV SiC MOSFET Switching-Cells for Integrated Power Electronics Building Block (iPEBB)." Thesis, Virginia Tech, 2021. http://hdl.handle.net/10919/104148.

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The need for high-density power electronics converters becomes more critical by the day as energy consumption continues to grow across the world. Specifically, the need for medium-voltage (MV) high-density converters in power distribution systems, electric ships, and airplanes become more critical as weight and space becomes more a premium. The limited space and footprint require new packaging technologies and methods to develop an integrated power converter. The advancement of wide-bandgap (WBG) devices like silicon carbide (SiC) allows converters to have higher power and faster switching..
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Soler, Victor. "Design and process developments towards an optimal 6.5 kV SiC power MOSFET." Doctoral thesis, Universitat Politècnica de Catalunya, 2019. http://hdl.handle.net/10803/668916.

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A sustainable future requires efficient power electronic converters at any stage of the electrical energy consumption. Silicon carbide (SiC) is one of the most technologically advanced wide bandgap semiconductors that can outperform silicon limits for power devices. SiC power MOSFETs are of the greatest interest since they are unipolar gate-controlled switches with high blocking voltage capability and reasonably low specific on-resistance. The focus of this thesis is on the design optimisation and process technology refinement towards the improvement of high-voltage SiC MOSFETs. Previous devel
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Phankong, Nathabhat. "Characterization of SiC Power Transistors for Power Conversion Circuits Based on C-V Measurement." 京都大学 (Kyoto University), 2010. http://hdl.handle.net/2433/126807.

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DiMarino, Christina Marie. "High Temperature Characterization and Analysis of Silicon Carbide (SiC) Power Semiconductor Transistors." Thesis, Virginia Tech, 2014. http://hdl.handle.net/10919/78116.

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This thesis provides insight into state-of-the-art 1.2 kV silicon carbide (SiC) power semiconductor transistors, including the MOSFET, BJT, SJT, and normally-on and normally-off JFETs. Both commercial and sample devices from the semiconductor industry's well-known manufacturers were evaluated in this study. These manufacturers include: Cree Inc., ROHM Semiconductor, General Electric, Fairchild Semiconductor, GeneSiC Semiconductor, Infineon Technologies, and SemiSouth Laboratories. To carry out this work, static characterization of each device was performed from 25 ºC to 200 ºC. Dynamic charact
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STELLA, FAUSTO. "On-line Junction Temperature Estimation of SiC Power MOSFETs." Doctoral thesis, Politecnico di Torino, 2019. http://hdl.handle.net/11583/2734315.

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Francisco, sousa alves Luciano. "Series-connected SiC-MOSFETs : A Novel Multi-Step Packaging Concept and New Gate Drive Power Supply Configurations." Thesis, Université Grenoble Alpes, 2020. http://www.theses.fr/2020GRALT050.

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Ce travail de thèse étudie de nouvelles configurations d'alimentation de commande rapprochée et un nouveau concept de packaging afin d'améliorer les performances des MOSFETs SiC connectés en série. Les nouvelles configurations de commande rapprochée sont proposées afin de réduire les courants de bruit qui circulent dans la partie commande du système électrique. De plus, une nouvelle alimentation de commande de grille est proposée pour augmenter le dv / dt de la cellule de commutation. Ces améliorations, c'est-à-dire la réduction du courant de bruit et l'amplification du dv/dt, sont obtenues en
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Noborio, Masato. "Fundamental Study on SiC Metal-Insulator-Semiconductor Devices for High-Voltage Power Integrated Circuits." 京都大学 (Kyoto University), 2009. http://hdl.handle.net/2433/78006.

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Books on the topic "SiC power MOSFET"

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Gunn, Steven. Law and power. Oxford University Press, 2017. http://dx.doi.org/10.1093/acprof:oso/9780199659838.003.0010.

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The new men knew how to use the law to pursue their own interests as well as the king’s. They hired talented lawyers to handle their business and deftly chose different courts for different kinds of suits—chancery, king’s bench, common pleas, and others—or arbitration for complex disputes. Several of them acquired bad reputations for abusing their power, but the king and their fellow councillors stood ready to rein them in, most obviously at the fall of Empson and Dudley, but also in the recurrent troubles of Sir John Hussey.
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Williams, Sonja D. Black Political Power. University of Illinois Press, 2017. http://dx.doi.org/10.5406/illinois/9780252039874.003.0012.

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This chapter focuses on Richard Durham's pursuit of new creative challenges after writing The Greatest. Durham had long talked about writing a book about Aesop—the man whose morality tales known as fables carry his name. Another historical figure who had long drawn Durham's creative interest was a man named Hannibal Barca, also known as Hannibal the Great or Hannibal the Conqueror. However, neither the Aesop nor the Hannibal project materialized. By the late 1970s, Durham knew that the seeds of a growing black political movement were sprouting in his hometown. His longtime friend, Illinois con
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Staples, Lee. Roots to Power. 3rd ed. ABC-CLIO, LLC, 2016. http://dx.doi.org/10.5040/9798216010050.

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The third edition of the manual for community organizers tells readers how to most effectively implement community action for social change, clearly laying out grassroots organizing principles, methods, and best practices. Written for those who want to improve their own lives or the lives of others, this thoroughly revised how-to manual presents techniques groups can use to organize successfully in pursuit of their dreams. The book combines time-tested, universal principles and methods with cutting-edge material addressing new opportunities and challenges. It covers basic concepts and best pra
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Bradford, Alfred S. Leonidas and the kings of Sparta. ABC-CLIO, LLC, 2011. http://dx.doi.org/10.5040/9798400678288.

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This pivotal history of the kings of Sparta not only describes their critical leadership in war, but also documents the waxing and waning of their social, political, and religious powers in the Spartan state. The Spartans have seemingly never gone out of interest, serving as mythic icons who exemplify fearlessness and an unwillingness to give in against impossible odds. Yet most are unaware of the true nature of the Spartan leaders—the fact that the kings maintained their position of power for 600 years by their willingness to compromise, even if it meant giving up some of their power, for exa
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Gentry, John A. How Wars Are Won and Lost. ABC-CLIO, LLC, 2011. http://dx.doi.org/10.5040/9798400666971.

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This provocative book seeks to answer a most crucial—and embarrassing—question concerning the U.S. military: why the United States is so often stymied in military confrontations with seemingly weaker opponents, despite its "superpower" status. This fascinating book examines a question that continues to puzzle soldiers, statesmen, and scholars: why do major powers—including the ostensible superpower United States—repeatedly perform poorly against seemingly overmatched adversaries? And what can they, and the United States, do to better achieve their military objectives? How Wars are Won and Lost
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Kelleher, J. Paul. The Social Cost of Carbon. Oxford University PressNew York, NY, 2025. https://doi.org/10.1093/9780197687826.001.0001.

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Abstract Climate change economists have called it “the most important number you have never heard of” and the “holy grail of climate economic analysis.” It is the social cost of carbon (SCC), and its purpose is to reflect—in one dollar figure—the harm caused by emitting a single ton of carbon dioxide into the atmosphere. The SCC is an essential concept for environmental cost-benefit analysis, and for the idea of an “optimal tax” on carbon emissions. It is also the subject of fierce debate in the academic literature and in American politics. This book offers the most systematic analysis yet of
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Birch, Dinah. Anthony Trollope: A Very Short Introduction. Oxford University PressOxford, 2025. https://doi.org/10.1093/actrade/9780192845627.001.0001.

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Abstract The Victorian novelist Anthony Trollope is among the most celebrated and engaging writers in the English language. His strongly drawn characters and skilful plots are compelling, while his moral judgements are often subtly challenging. He is an entertainer, but his power to make his readers both think and feel is unrivalled. This Very Short Introduction places Trollope’s work in the context of his life and times, drawing on recent scholarship to illuminate his central concerns and literary strategies, including his interests in work, money, marriage, gender, and the law, and his chang
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Leo, Russ, Katrin Röder, and Freya Sierhuis, eds. Fulke Greville and the Culture of the English Renaissance. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198823445.001.0001.

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This book intends to provide a comprehensive reappraisal of the work of the Renaissance poet and politician Sir Fulke Greville, whose political career stretched from the heyday of the Elizabethan age into the Stuart period. While Greville’s literary achievements have traditionally been overshadowed by those of his more famous friend Sir Philip Sidney, his oeuvre comprises a highly diverse range of works of striking force and originality, comprising a sonnet sequence, a biography of Sir Philip Sidney, a series of philosophical treatises, and two closet dramas set in the Ottoman Empire. The essa
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Thompson, William R., and Leila Zakhirova. The Netherlands: Not Quite the First Modern Economy. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780190699680.003.0006.

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In this chapter, we look at four cases: Genoa, Venice, Portugal, and the Netherlands. Genoa, Venice, and Portugal acted as transitional agents over a five- to six-hundred-year period, creating sea power and trading regimes to move Asian commodities and innovations to and from European markets. While Genoa and Venice were primarily Mediterranean-centric, Portugal led the breakthrough from the constraints of the inland sea and inaugurated Europe’s Atlantic focus. None of these actors possessed the power of China nor subsequent global actors, but for their age, they were critical technological le
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Harris, Michael. Come With Me If You Want to Live. The Rowman & Littlefield Publishing Group, 2023. https://doi.org/10.5040/9781666987386.

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If our near future sometimes feels like a dystopian sci-fi movie, that’s because it is. In Come With Me If You Want to Live: The Future as Foretold in Classic Sci-Fi Films, Michael Harris reveals the hidden-in-plain-sight meanings of the greatest science fiction films of the past fifty years, the ways in which they predicted the future that we are increasingly living in, but how we can still avoid the worst of what they warned us about. The 1970s saw the start of a new wave of science fiction that predicted environmental destruction, out-of-control technology, and escalating political crises.
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Book chapters on the topic "SiC power MOSFET"

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Baliga, B. Jayant. "SiC Planar MOSFET Structures." In Advanced Power MOSFET Concepts. Springer US, 2010. http://dx.doi.org/10.1007/978-1-4419-5917-1_9.

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Baliga, B. Jayant. "SiC Planar MOSFET Structures." In Advanced High Voltage Power Device Concepts. Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4614-0269-5_6.

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M’Sirdi, N. K., K. Frifita, E. Baghaz, A. Naamane, and M. Boussak. "State Space Models for Power SiC MOSFET." In Lecture Notes in Electrical Engineering. Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-13-1405-6_36.

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Guzman, Cristina, Alben Cardenas, Kodjo Agbossou, and Mamadou Doumbia. "Modeling of SiC MOSFET for Power Electronics Converters Simulation." In Data-Driven Modeling for Sustainable Engineering. Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-13697-0_27.

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Imaizumi, Masayuki, Yoichiro Tarui, Shin-Ichi Kinouchi, et al. "Switching Characteristics of SiC-MOSFET and SBD Power Modules." In Silicon Carbide and Related Materials 2005. Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1289.

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Jouha, W., A. El Oualkadi, P. Dherbécourt, E. Joubert, and M. Masmoudi. "An Extraction Method of SiC Power MOSFET Threshold Voltage." In Recent Advances in Electrical and Information Technologies for Sustainable Development. Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-05276-8_2.

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Wu, Yifan, Chi Li, Zedong Zheng, Lianzhong Wang, Tao Liu, and Guojing Liu. "A Behavior Model of Planar SiC MOSFET Considering Avalanche Breakdown." In The Proceedings of 2022 International Conference on Wireless Power Transfer (ICWPT2022). Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-99-0631-4_75.

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Xie, Ning, Yanjun Zhao, Wei Zhao, Jingpeng Yue, Wei Wang, and Chiye Zhang. "Design Method for Power Unit of Power Conversion System Based on SiC MOSFET." In Lecture Notes in Electrical Engineering. Springer Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-1528-4_39.

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Deng, Dahan, Jingwei Zhang, and Shuhao Li. "SiC MOSFET Gate Drive Power Supply Based on Active Clamp Flyback." In The Proceedings of 2022 International Conference on Wireless Power Transfer (ICWPT2022). Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-99-0631-4_61.

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Wang, Xinying, Xiaofeng Tao, Leilei Zhan, et al. "Design of Wide Voltage Range DC–DC Converter Based on SiC MOSFET." In Conference Proceedings of 2022 2nd International Joint Conference on Energy, Electrical and Power Engineering. Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-99-4334-0_74.

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Conference papers on the topic "SiC power MOSFET"

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Xu, Haochen, Xuesheng Li, and Chuan Yang. "Thermal Stability Analysis of SiC MOSFET Power Modules." In 2024 IEEE International Conference on Mechatronics and Automation (ICMA). IEEE, 2024. http://dx.doi.org/10.1109/icma61710.2024.10632947.

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Spitaleri, Maria Giorgia, Giuseppe Scarcella, Giacomo Scelba, et al. "Power Board Design for Parallel SiC MOSFET Characterization." In 2024 Energy Conversion Congress & Expo Europe (ECCE Europe). IEEE, 2024. http://dx.doi.org/10.1109/ecceeurope62508.2024.10752063.

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Baker, Nick, Francesco Iannuzzo, and Szymon Bęczkowski. "Multi-Chip Temperature Imbalance of SiC MOSFETs in MOSFET vs. Body-Diode Conduction." In 2025 IEEE International Workshop on Integrated Power Packaging (IWIPP). IEEE, 2025. https://doi.org/10.1109/iwipp61784.2025.10971548.

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Boutry, Arthur, Andrew N. Lemmon, Nick Baker, Max Rogers, and Nicholas Turner. "A 6.5kV Full-Bridge SiC MOSFET Module Design." In 2025 IEEE International Workshop on Integrated Power Packaging (IWIPP). IEEE, 2025. https://doi.org/10.1109/iwipp61784.2025.10971507.

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Baker, Nick, Ella Hart, Arthur Boutry, and Andrew Lemmon. "SiC MOSFET Parameter Tolerance – A Comparison Between 5 Manufacturers." In 2025 IEEE International Workshop on Integrated Power Packaging (IWIPP). IEEE, 2025. https://doi.org/10.1109/iwipp61784.2025.10971708.

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Pratap, Rajendra, R. K. Singh, and Vineeta Agarwal. "SiC Power MOSFET modeling challenges." In 2012 Students Conference on Engineering and Systems (SCES). IEEE, 2012. http://dx.doi.org/10.1109/sces.2012.6199109.

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De, D., S. Lopez-Arevalo, A. Lamantia, and A. Castellazzi. "SiC MOSFET based Avionic Power Supply." In 7th IET International Conference on Power Electronics, Machines and Drives (PEMD 2014). Institution of Engineering and Technology, 2014. http://dx.doi.org/10.1049/cp.2014.0339.

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Matocha, Kevin. "Challenges in SiC power MOSFET design." In 2007 International Semiconductor Device Research Symposium. IEEE, 2007. http://dx.doi.org/10.1109/isdrs.2007.4422412.

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Zhuolin, Duan, Zhang Dong, Fan Tao, and Wen Xuhui. "A simple SiC power MOSFET model." In IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society. IEEE, 2017. http://dx.doi.org/10.1109/iecon.2017.8216122.

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Su, Gui-Jia. "Loss Modeling for SiC MOSFET Inverters." In 2018 IEEE Vehicle Power and Propulsion Conference (VPPC). IEEE, 2018. http://dx.doi.org/10.1109/vppc.2018.8604972.

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Reports on the topic "SiC power MOSFET"

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Sbrockey, Nick M., Gary S. Tompa, Michael G. Spencer, and Chandra M. V. S. Chandrashekhar. SiC Power MOSFET with Improved Gate Dielectric. Office of Scientific and Technical Information (OSTI), 2010. http://dx.doi.org/10.2172/1067486.

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Ogunniyi, Aderinto, Heather O’Brien, and Miguel Hinojosa. Sub-Millisecond Pulse Power Evaluation of High-Voltage Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) and High-Voltage SiC Insulated Gate Bipolar Translator. DEVCOM Army Research Laboratory, 2022. http://dx.doi.org/10.21236/ad1181629.

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Cooper, James. A New Class of SiC Power MOSFETs with Record-Low Resistance. Office of Scientific and Technical Information (OSTI), 2023. http://dx.doi.org/10.2172/2324924.

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Cooper, James A., and Jr. Development of SiC Power MOSFETs with Low On-Resistance for Military and Commercial Applications. Defense Technical Information Center, 2003. http://dx.doi.org/10.21236/ada414680.

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Egid, Beatrice, Kerry Millington, Sally Theobald, and Sushil Baral. Six Guiding Principles to Support Equity in Global Health Programmes. Institute of Development Studies, 2025. https://doi.org/10.19088/k4dd.2025.022.

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Health equity is about recognising and addressing people’s different health needs. To support this, it is critical to understand how wider systems and structures have led to unequal allocation of resources, power and opportunity, driving avoidable and unfair differences in health outcomes. It is more important than ever to consider how health systems, policy and programmes reach and impact people with different characteristics in different circumstances. Thinking about principles can help guide decision-making on where to invest resources to maximise the benefit for the most vulnerable and hel
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Vandevort, Daniel, Chandler Engel, Shaun Stanton, and Jeffrey Ellis. Application of limited-field-data methods in reservoir volume estimation : a case study. Engineer Research and Development Center (U.S.), 2024. http://dx.doi.org/10.21079/11681/48268.

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The conventional approach to estimating lake or reservoir water volumes hinges on field data collection; however, volume estimation methods are available that use little or no field data. Two such methods—the simplified V-A-h (volume-area-height) and the power function—were applied to a set of six anthropogenic reservoirs on the Fort Jackson, South Carolina, installation and checked against a validation data set. Additionally, seven interpolation methods were compared for differences in total volume estimation based on sonar data collected at each reservoir. The simplified V-A-h method overest
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Salonen, Hilma, and Lumi Tomrén. Can local value creation induce a sense of justice during green transitions? A study of six rural areas in Denmark, Finland, and Norway. Nordregio, 2023. http://dx.doi.org/10.6027/r:2023:91403-2503.

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The accelerating impacts of climate change, the need to adapt to changing economic and political realities, and the recent energy crisis have made the green transition something that most Nordic citizens acknowledge. However, especially rural areas and their communities are at risk of being reduced to passive instruments of national green transition measures featuring heavy land-use. These conditions make it very difficult to create a sense of justness in green transitions, leading to growing sense of alienation and resentment and putting the national climate goals in danger. From this startin
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Navarro, Adoracion, Ma Kristina Ortiz, and Jethro El Camara. How Energy Secure is the Philippines? Philippine Institute for Development Studies, 2023. http://dx.doi.org/10.62986/dp2023.15.

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Energy security is a comprehensive concept, and pursuing it as a developmental goal entails, first and foremost, a clearer understanding of what it means. This study proposes six broad elements in assessing energy security: sufficiency, reliability, resilience, affordability, accessibility, and sustainability. In assessing the energy security situation in the Philippines, the study employs an indicators-based assessment. Based on existing literature, the method involves defining specific energy security indicators (ESIs) corresponding to the six broad elements mentioned, running some calculati
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Amores, Antonio F., Henrique Basso, Johannes Simeon Bischl, et al. Inflation, fiscal policy and inequality. The distributional impact of fiscal measures to compensate for consumer inflation. Banco de España, 2024. http://dx.doi.org/10.53479/36624.

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This paper analyses the distributional impact of high consumer inflation in the euro area and government measures to compensate households in 2022. The study uses the tax-benefit microsimulation model for the European Union (EUROMOD) with microdata as the input – EU statistics on income and living conditions (EU-SILC) and household budget surveys (HBS) – to quantify the distributional impact of inflation, income support measures and measures aimed at containing prices. The analysis confirms that purchasing power and welfare were more severely affected by the 2022 inflation surge among lower-in
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Micco, Alejandro, and Natalia Pérez. Determinants of Maritime Transport Costs. Inter-American Development Bank, 2002. http://dx.doi.org/10.18235/0011324.

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Recent literature has emphasized the importance of transport costs and infrastructure in explaining trade, access to markets, and increases in per capita income. For most Latin American countries, transport costs are a greater barrier to U.S. markets than import tariffs. The authors investigate the determinants of shipping costs to the U.S. with a large database of more than 300,000 observations per year on shipments of products at the six-digit HS level from different ports around the world. In addition, the authors find that efficiency of ports is an important determinant of shipping costs.
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